CN107251402B - The manufacturing method of electret elements, electromechanical transducer and electret elements - Google Patents
The manufacturing method of electret elements, electromechanical transducer and electret elements Download PDFInfo
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- CN107251402B CN107251402B CN201680009509.XA CN201680009509A CN107251402B CN 107251402 B CN107251402 B CN 107251402B CN 201680009509 A CN201680009509 A CN 201680009509A CN 107251402 B CN107251402 B CN 107251402B
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 47
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 47
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 47
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 47
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 3
- 210000004508 polar body Anatomy 0.000 claims 1
- 239000010410 layer Substances 0.000 description 114
- 230000005684 electric field Effects 0.000 description 28
- 230000003647 oxidation Effects 0.000 description 28
- 238000007254 oxidation reaction Methods 0.000 description 28
- 238000000034 method Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 230000009471 action Effects 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 240000002853 Nelumbo nucifera Species 0.000 description 4
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 4
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 4
- 229910001413 alkali metal ion Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
- H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/06—Influence generators
- H02N1/10—Influence generators with non-conductive charge carrier
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
- H02N1/008—Laterally driven motors, e.g. of the comb-drive type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49226—Electret making
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Micromachines (AREA)
Abstract
The SiO that electret elements have Si layers, formed on Si layers of surfaces2Layer and in SiO2The electret nearby formed at the interface with Si layers of layer.
Description
Technical field
The present invention relates to the manufacturing methods of electret elements, electromechanical transducer and electret elements.
Background technique
As in SiO2Deng insulating film in fixed charge previous method, have utilize " corona discharge ", " electronics
Method of the beam " from the surface of insulating film injection charge (for example, referring to patent document 1).However, because being difficult to make in the method
The narrow gap part electrification such as the side of comb structure, so the gimmick assembled after being typically employed in on-line treatment.Accordingly, it is difficult to
Gap is reduced, and is limited as power generator, the performance of actuator.
Therefore, the method as so narrow gap portion electrification, proposes through grenz ray ionized air, and pass through biasing
The method of voltage injection ion (for example, referring to 2 reference of patent document).
In addition, propose by high temperature apply bias voltage come move/fix SiO2Potassium ion etc. contained by layer
The method of alkali metal ion (for example, referring to patent document 3).
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 9-283373 bulletin
Patent document 2: No. 5551914 bulletins of Japanese Patent No.
Patent document 3: No. 5627130 bulletins of Japanese Patent No.
Summary of the invention
Problems to be solved by the invention
In the method disclosed in patent document 2 when on-line treatment, need to maintain electric field to act as the position that hope is charged
State.For example, all being charged until in order to make comb teeth to root, the state for needing that comb teeth is maintained mutually deeply to be inserted into.However,
With the progress of electrification, electrostatic is reduced and the insertion of comb teeth becomes smaller, therefore in order to maintain insertion to need to press the spy of comb teeth
Different mechanism.In addition, therefore, it is difficult to make by closed part electrification due to needing air in processes.
Also, because whichever method is all to be difficult to control the fixation of charge from the method for surface injection charge
Position (depth since surface), and can not equably be charged in the deep of insulator.Because being fixed on the electricity near surface
Lotus reacts and is neutralized with the vapor in air, so it is such to have the shortcomings that the service life of electret shortens.
On the other hand, alkali metal ion is used in method disclosed Patent Document 3, but under normal circumstances, because
Alkali metal can be such that the electrical characteristic of semiconductor element deteriorates, so excluding from manufacturing device.Therefore, in the method, it is difficult to
Electret is improved to a part of cmos device, to limit application range.In addition, in the method, because in SiO2Table
Alkali metal ion is nearby fixed in face, so the lost of life of electret in order to prevent, needs the additional processing for implementing waterproof membrane etc..
The means to solve the problem
1st mode according to the present invention, electret elements have Si layers, Si layers surfaces formed SiO2 layer,
The electret nearby formed at SiO2 layers of the interface with Si layers.
2nd mode according to the present invention, electromechanical transducer have the 1st that mutually relative configuration and at least one party can move
Electrode and the 2nd electrode, the 1st electrode are made of the electret elements of the 1st mode, by the 1st electrode and the 2nd electrode extremely
A few side moves, the conversion between Lai Jinhang electric energy and mechanical energy.
3rd mode according to the present invention, preferably in the electromechanical transducer of the 2nd mode, Si layers are made of Si substrate, and
Si substrate is formed at least part for driving the circuit element of electromechanical transducer.
4th mode according to the present invention passes through the work of external force preferably in the electromechanical transducer of the 2nd or the 3rd mode
With the electrode of the 1st electrode and at least one party in the 2nd electrode are moved to generate electricity.
5th mode according to the present invention has preferably in the electromechanical transducer of the 2nd or the 3rd mode and is provided with the 1st
The stationary part of electrode, the movable part for being provided with the 2nd electrode, applied between the 1st electrode and the 2nd electrode alive voltage source, with
And the application voltage of voltage source is controlled to drive the control unit of movable part.
6th mode according to the present invention, the manufacturing method of electret elements will form SiO on one side2The Si layer of layer maintains
In SiO2Layer becomes the 1st temperature of semi-conductive state, on one side in Si layers and SiO2Apply voltage between layer, and is applied with voltage
In the state of, make to form SiO2The Si layer of layer is from the 1st temperature change to SiO2Layer restores the 2nd temperature of insulating properties.
The effect of invention
By means of the invention it is possible to provide a kind of electret elements of electret for having excellent lifetime performance.
Detailed description of the invention
Fig. 1 illustrates the electret elements of the 1st embodiment.
Fig. 2 indicates Si/SiO2The electrical characteristic at interface.
Fig. 3 illustrates the electrification principle in the electret elements of present embodiment.
Fig. 4 illustrates the electrification principle in the electret elements of present embodiment, and indicates to apply state when voltage is zero.
Fig. 5 explains on-line treatment in detail.
Fig. 6 explains on-line treatment in detail.
Fig. 7 explains on-line treatment in detail.
Fig. 8 is the schematic diagram for indicating the Sketch of vibration generating device.
Fig. 9 indicates the B1-B1 section configuration of Fig. 8.
Figure 10 indicates the B1-B1 section configuration after forming oxidation film, having carried out on-line treatment.
Figure 11 illustrates the applying mode of bias voltage V1.
Figure 12 is the schematic diagram that the electric double layer formed in comb electrodes is shown in detail.
Figure 13 is the schematic diagram that the structure in the region by the dotted line C encirclement of Figure 12 is shown in detail.
Figure 14 indicates to apply the state that voltage is V1.
Figure 15 indicates to apply the state that voltage is zero.
Figure 16 is illustrated for the power generation movement of vibration generating device.
Figure 17 illustrates the outline structure of MEMS shutter.
Figure 18 illustrates the drive actions of interdigitated electrode structure actuator, and indicates to apply the case where voltage V is V=0.
Figure 19 illustrates the drive actions of interdigitated electrode structure actuator, and indicates that the case where voltage V is set as 0 < V < V1 will be applied.
Figure 20 illustrates the drive actions of interdigitated electrode structure actuator, and indicates that the case where voltage V is set as V=V1 will be applied.
Figure 21 illustrates the effect of electret.
Specific embodiment
Hereinafter, being explained with reference to mode for carrying out the present invention.
- the 1 embodiment-
Electret elements involved in 1st embodiment are by forming Si layers and SiO across interface2Layer, and in SiO2Layer
The interface of side nearby forms the element of electret.The inventors found that Si/SiO as described below2The electrical spy at interface
Property, and using the electrical characteristic in SiO2Layer forms electret.
In Fig. 1, sample 100 forms SiO on a face of Si layer 1012Layer 102.In Si layer 101 and SiO2Layer
102, it forms Au layer 103,104 and is used as electrode.When making Si high temperature (500~700 DEG C or so), due to intrinsic carrier concentration
Increase so that resistivity reduction thus can substantially be considered as conductor.Additionally, it is known that SiO2It is excellent insulation at normal temperature
Body, but due to the influence of thermal excitation electronics under high temperature (500~700 DEG C or so), resistivity is reduced to 104Ω m grade (with
Semiconductor is same degree).
Therefore, present inventor is as shown in Figure 1, production has Si/SiO2The sample 100 at interface, and at high temperature (about 610 DEG C)
Si/SiO has been investigated under state2The electrical characteristic at interface.Fig. 2 indicates to apply the relationship of voltage V1 and electric current i, and specifies high temperature
Si/SiO under state2Interface has rectification effect as schottky junction.
(explanation of electrification principle)
Fig. 3 illustrates the electrification principle in the electret elements of present embodiment.Will between Si layer 202,203 across
SiO2The substrate (for example, SOI (Silicon On Insulator, silicon-on-insulator) substrate) 200 of the structure of layer 201 is heated to
SiO2In the state of the high temperature (500~700 DEG C) of semiconductor transformation, if applying voltage V1 as shown in Figure 3, across Si/SiO2Boundary
Face 204 and form electric double layer.In addition, being generally used in the electric double layer for being doped with impurity in Si layers, in this case, can make
With any one in p-type and N-shaped.Alternatively, it is also possible to being the Si layer not comprising impurity.
As described above, Si/SiO at high operating temperatures2Interface has rectification effect as shown in Figure 2.Therefore, by every
Upside Si/SiO2Positive charge is put aside in 202 side of Si layer in interface 204, and in SiO2Put aside negative electrical charge in 201 side of layer.Another party
Face, the Si/SiO about downside2Interface can not form electric double layer because applying voltage in the direction of electric current flowing.
Then, when the temperature of substrate 200 being restored to room temperature in the state of being applied with voltage, i.e., it is being reduced to SiO2
When the temperature that the insulating properties of layer 201 is restored, across Si/SiO2The SiO at interface 2042The negative electrical charge of 201 side of layer savings is trapped in
The region and can not move.Hereafter, as shown in figure 4, when stopping applying voltage V1 to connect Si layer 202 and Si layer 203, positive electricity
A part of lotus is mobile from Si layer 202 to Si layer 203.
On the other hand, due to SiO2Layer 201 is insulating properties, therefore SiO2Negative electrical charge in layer 201 is relieving application voltage
Still Si/SiO is trapped in after V12Near interface 204.As a result, as shown in Figure 4 in SiO2Electric field E is formed in layer 201.It should
Electric field E is the electric field generated due to electret, Si/SiO2Interface 204 and Si/SiO2Potential difference between interface 205 is V1.
That is, foring the electret of voltage V1.
Carried charge etc. is described in detail referring to Fig. 5~7.Fig. 5 is to sandwich SiO in Si layers2The schematic diagram of the structure of layer.Table
Surface charge Q2, Q3 is the charge for constituting electric double layer shown in Fig. 4.Distance d between surface charge Q2, Q3 in electric double layer is in the extreme
It is small, but distance d is enlarged and displayed turgidly in Fig. 5 in order to understand, and in the fixed SiO in the position of diagram2In layer 201
Surface charge Q2.In Fig. 5, surface charge Q1 is also charged in Si layer 203, therefore structure is generally neutral.Only SiO as a result,2
Electric field E1, E2 in layer 201 have the size of non-zero, and the potential difference caused by the electric field E1, E2 between Si layer 202,203 is V.
Distribution firstly, for surface charge Q1, Q3 is illustrated.If respectively to across the region of surface charge Q1,
It is applicable in Gauss law across the region of surface charge Q2 and across the region of surface charge Q3, then can obtain formula below
(1)~(3).In addition, S is SiO2The area of section of layer 201, Si layer 202,203, ε 1 is SiO2The dielectric constant of layer 201.
ε 1E1S=Q1 ... (1)
(ε 1E2- ε 1E1) S=Q2 ... (2)
- ε 1E2S=Q3 ... (3)
In addition, formula (4) below is set up because the potential difference of upper and lower Si interlayer is V.D is surface charge Q2, Q3
Between distance, g is the distance between surface charge Q1, Q2.
GE1+dE2=-V ... (4)
If arranging formula (1)~(4), surface charge Q1, Q3 is obtained as formula below (5), (6).
Q1=-dQ2/ (g+d)-ε 1SV/ (g+d) ... (5)
Q3=-Q2-Q1 ... (6)
Then, the relationship of the voltage V applied in on-line treatment Yu surface charge Q2 are illustrated using Fig. 6.Apply voltage V
It is set to V=V1, because of Si/SiO as can be seen from Figure 22Electric current is flowed through at interface 205, so the formula below in the state of Fig. 6
(7), (8) are set up.Then, if formula (7), (8) are suitable for formula (5), formula (9) can be obtained.The Q2 is in SiO2Layer 201
The fixed surface charge of middle electrification, forms electret.Herein, when applying voltage V1 is V1 > 0, then Q2 < 0.In Fig. 6
In, the potential change of stacking direction is illustrated on the right side of the diagram of substrate 200.In the case of fig. 6, in Si/SiO2Interface 204
Middle formation electric double layer, voltage V1 is concentrated in the electric double layer.
V=V1 ... (7)
Q1=0 ... (8)
Q2=- ε 1SV1/d ... (9)
Then, the surface charge of the room temperature after on-line treatment shown in Fig. 4 is illustrated.In addition, because SiO2Layer
201 restore insulating properties at normal temperature to keep charge of bottling up, so surface charge Q2 maintains the value of formula (9).For surface charge
Q1 obtains formula (10) by the way that formula (9) is updated to formula (5).
Q1=- ε 1S (V1-V)/(g+d) ... (10)
There are potential difference V1 between Si layer 202 and Si layer 203 in the state of shown in Fig. 6, as shown in fig. 7, in connection Si
Due to the potential difference when layer 202 and Si layer 203, positive charge is mobile to which potential difference is reduced from Si layer 202 to Si layer 203.It is above-mentioned
Formula (10) indicates the amount of movement of positive charge when potential difference changes to V from V1.Finally as shown in fig. 7, potential difference V becomes V=0,
Therefore the surface charge Q1 of Si layer 203 becomes formula below (11).
Q1=- ε 1SV1/ (g+d) ... (11)
In addition, if comparison expression (10) and formula (9), then the relationship of formula (12) below is set up.Wherein, | V | < | V1 | and d
< < g.
| Q1 | < < | Q2 | ... (12)
On the other hand, for surface charge Q3, from formula (6) it is found that become surface charge Q2 induction charge-Q2 be based on
The sum of the charge-Q1 that small charge Q 1 flows out.Therefore, substantially become with the electric double layer { Q2 ,-Q2 } of high charge density
A small amount of charge Q 1 carries out moving this situation with potential difference between upper and lower Si layer.
The advantages of such electret, is: Q1 ≠ 0 (i.e. electric field E1 ≠ 0) in potential difference V=0 as shown in Figure 7.According to formula
(11) it will also realize that, the size of the electric field E1 generated at this time is applied with external bias voltage V1 when being with no electret (Q2=0)
When the identical size of generated electric field.Therefore, " electrified voltage of electret is V1 " is shown as.
In addition, in the example shown in Fig. 7, although electric field E1 is confined to SiO2Layer 201 inside and utility value is small, still
By implementing on-line treatment in aftermentioned such predetermined structure, electric field can be generated between gap.Utilize what is generated between the gap
Electric field can carry out electricapparatus transformation (transformation between electric energy and mechanical energy), and can be used in power generation, sensor, actuating
Device etc..
- the 2 embodiment-
2nd embodiment by the electret elements of the 1st embodiment be suitable for mechanical electric converter an example be
The vibration generating device of comb structure.Fig. 8 is the schematic diagram for indicating the Sketch of vibration generating device 300.The vibrating power-generation
Device 300 also with the electret elements of the 1st embodiment the case where it is identical, by using with general MEMS the case where is identical
Semiconductor integrated circuit manufacturing technology (for example, deep reaction ion etching etc. based on ICP-RIE) is processed to form SOI base
Plate.
Vibration generating device 300 has fixed broach electrode 302 and movable comb electrodes on rectangular ring pedestal 301
303.Movable comb electrodes 303 are elastically supported on pedestal 301 by flexible support portion 305.Each comb of movable comb electrodes 303
Tooth configures between each comb teeth of fixed broach electrode 302 via gap.Hammer 304 is provided in movable comb electrodes 303.
It is vibrated if applied from outside to vibration generating device 300, movable comb electrodes 303 are vibrated to the direction arrow R.Load
320 are connected between fixed broach electrode 302 and movable comb electrodes 303.As described later, the shape in fixed broach electrode 302
Movable comb electrodes 303 are made to generate electricity when vibrating at electret, and applying external force to vibration generating device 300.
In the present embodiment, after SOI substrate being processed as to shape as shown in Figure 9, as the SiO for forming electret2
Layer forms oxidation film (SiO by thermal oxidation method on Si layers of surfaces2Layer) (thickness t=0.2~1 μm or so) (referring to Fig.1 0).
Hereafter, fixed charge forms electret in oxidation film in a same manner as in the first embodiment.In addition, in the present embodiment, leading to
It crosses thermal oxidation method and forms and be formed by oxidation film (SiO on Si layers of surface2Layer), however, it is not limited to this can be by each
Oxide film forming method is planted to form oxidation film (SiO2Layer).For example, it is also possible to by accumulating SiO on Si layers by CVD2Carry out shape
At oxidation film (SiO2Layer).
Fig. 9 indicates the figure of the B1-B1 section configuration of Fig. 8, and indicates to be formed the shape in the stage before oxidation film.Pass through
The process layer (Si) of SOI substrate forms pedestal 301.Fixed broach electrode 302 is formed by the mechanical floor (Si) of SOI substrate.Symbol
Insertion oxidation film (the SiO of the BOX layer of SOI substrate is partially known as shown in numbers 3072).Although not shown, still leading to
The mechanical floor for crossing SOI substrate forms movable comb electrodes 303, flexible support portion 305 and hammer 304.
Figure 10 indicates to form oxidation film, and has carried out the B1-B1 cross sectional shape after on-line treatment.What is formed by Si layers
The surface of fixed broach electrode 302 and pedestal 301 is respectively formed oxidation film 310.In the on-line treatment for carrying out oxidation film 310
When, with 1 embodiment the case where is identical, is heated to SiO using heater etc.2Layer is the temperature that oxidation film 310 becomes semiconductor
Degree.Then, if oxidation film 310 becomes semiconductor, in the state of being applied with bias voltage V1 (10~200V), make to become
The oxidation film 310 of semiconductor is cooled to the temperature for restoring insulating properties.As shown in Figure 10, because Si layers of edge part passes through thermal oxide
Become R shape, so electric field concentration when bias voltage applies is alleviated, insulation breakdown intensity becomes larger.Therefore, although fixed comb
Gap size (2 μm or so) between tooth electrode 302 and movable comb electrodes 303 is small, but can apply relatively high biasing
Voltage.
(detailed description of on-line treatment)
When carrying out on-line treatment, as shown in figure 11, in fixed broach electrode 302 and movable comb electrodes 303 and bottom
Apply bias voltage V1 between seat 301.Firstly, being heated to vibration generating device 300 by SiO2The oxidation film 310 of formation becomes
The temperature (500~700 DEG C) of semiconductor.Then, apply bias voltage V1, so as to across the Si/SiO of fixed broach electrode 3022
Interface 306 forms electric double layer (referring to Fig.1 0).
Figure 12 is shown schematically in the fixed broach electrode 302 and movable comb electrodes for the state for foring electric double layer
The section (section parallel with the paper of Figure 11) of 303 equitant parts.In addition, below in 302 shape of fixed broach electrode
At oxidation film assign symbol 310a, to is formed in movable comb electrodes 303 oxidation film imparting symbol 310b.In addition, to solid
The Si layer for determining comb electrodes 302 assigns symbol 311a, assigns symbol 311b to the Si layer of movable comb electrodes 303.It is inclined applying
When setting voltage, Si/SiO2The potential difference of electric double layer in interface 306 is gradually increasing, and eventually becomes voltage V1 (several seconds~a few minutes
Clock).
Because of SiO2Layer (oxidation film 310a and BOX layer 307) becomes semiconductor and resistivity reduces, so SiO2In layer
Substantially same current potential.Therefore, in entire Si/SiO2It is uniform charge density in interface 306, forms electricity until comb teeth tip
It is double-deck.In addition, when in entire Si/SiO2When forming electric double layer in interface 306, by the SiO of resistivity reduction2Layer electrostatic screen, institute
To be not in electric field on the outside of electric double layer.Accordingly, because the electrostatic between comb electrodes is zero, so can be by observing this
The standard that kind situation is completed as on-line treatment.
Figure 13 is the schematic diagram that the structure by the dotted line C area encompassed of Figure 12 is shown in detail, and corresponds to the 1st and implements
Fig. 5 of mode.It is formed in 310a and Si layers of 311a of oxidation film of fixed broach electrode 302 across Si/SiO2Interface 306 is constituted
Surface charge Q5, Q6 of electric double layer.Surface charge Q4 indicates the charge charged in the Si layer 311b of movable comb electrodes 303.
E3 is the electric field formed in the oxidation film 310b of movable comb electrodes 303.E5, E6 are the oxidations in fixed broach electrode 302
The electric field formed in film 310a.E4 is the electric field formed between gap between comb electrodes 302,303 in G.
Respectively to the region comprising surface charge Q4 of Figure 13, include the region at the interface of G between oxidation film 310b and gap, packet
The region at the interface of G, the region comprising surface charge Q5 and the region comprising surface charge Q6 between 310a containing oxidation film and gap
When being applicable in Gauss law, formula below (13)~(17) are obtained.In addition, area of section when S is the region C that cut Figure 12.ε
0, ε 1 is G and oxidation film (SiO between gap2) dielectric constant.
ε 1E3S=Q4 ... (13)
(ε 0E4- ε 1E3) S=0 ... (14)
(ε 1E5- ε 0E4) S=0 ... (15)
(ε 1E6- ε 1E5) S=Q5 ... (16)
- ε 1E6S=Q6 ... (17)
In addition, because the potential difference between upper and lower Si layer 311a, 311b is V, distance d, g1 shown in Figure 13,
G2, g3, formula (18) below are set up.
G1E3+g2E4+g3E5+dE6=-V ... (18)
According to formula (13)~(17), the formula below (19) for indicating the relationship between surface charge Q4, Q5, Q6 is obtained.
Q6=-Q5-Q4 ... (19)
In addition, obtaining indicates electric charge, that is, surface charge Q5 formula below (20) according to formula (13)~(18).
Q5=- [(d+g1+g2 (1/ ε 0 of ε)+g3)/d] Q4- ε 1SV/d ... (20)
When being applied with bias voltage V1 as shown in figure 14, because of Si/SiO2Electric current is flowed through at interface 308, so applying
V=V1, Q4=0 in the state of bias voltage.If being set as V=V1, Q4=0 in formula (20), use formula below (21)
To indicate surface charge Q5.When applying voltage V1 is V1 > 0, Q5 < 0.In addition, if being set as Q4=0 in formula (19),
Q6=-Q5.Like this, in the case of fig. 14, in Si/SiO2Electric double layer is formed in interface 306, and electric in the electric double layer
V1 is pressed to concentrate.
Q5=- ε 1SV1/d ... (21)
As shown in figure 14, if in Si/SiO2In the state of foring electric double layer in interface 306, that is, be applied with biasing
Temperature is reduced to SiO in the state of voltage V12When restoring temperature (for example, room temperature) of insulating properties, then in oxidation film 310a
The surface charge Q5 of electrification is fixed on position shown in Figure 14.Hereafter, as shown in figure 15, if being connected and fixed comb electrodes
The 302 Si layer 311a and Si layer 311b of movable comb electrodes 303, then due to the potential difference (referring to Fig.1 4) between them, electricity
Lotus (Q4) is moved to Si layers of 311b from Si layers of 311a to which potential difference is reduced.When potential difference is changed to V from V1, use is below
Formula (22) indicates charge amount of movement at this time.Finally, as shown in figure 15, if potential difference becomes zero, surface charge Q4 such as with
Under formula (23) shown in.
Q4=- ε 0S (V1-V)/[g '+d (0/ ε 1 of ε)] ... (22)
Wherein, g '=g2+ (g1+g3) (0/ ε 1 of ε)
Q4=- ε 0SV1/ [g '+d (0/ ε 1 of ε)] ... (23)
Because becoming Q4=ε 0E4S according to formula (13), (14), so according to the formula and formula (23), by below
Formula (24) indicates the electric field E4 of G between the gap in Figure 15.This and is applied in the case where no electret (surface charge Q5)
The electric field formed when voltage V1 is consistent.
E4=-V1/ [g '+d (0/ ε 1 of ε)] ... (24)
(explanation of power generation movement)
Next, the power generation movement for vibration generating device 300 is illustrated.Figure 16 schematically illustrates movable comb
Tooth electrode 303 carries out sliding movement, the mutual state (c) for being overlapped into zero of comb teeth, comb teeth relative to fixed broach electrode 302
Half overlapping state (b), entire comb teeth overlapping state (a).This is equivalent to the load 320 for being connected to the Low ESR limit
Situation corresponds to since area S (being equivalent to overlapping area) changes in formula (22) so that the quantity of electric charge of surface charge Q4
The case where changing.In addition, herein to simplify the explanation, a negative sign shown in surface charge Q5 is set as the quantity of electric charge-
1 positive sign shown in surface charge Q4, Q6 is considered as the quantity of electric charge+q to illustrate the variation of the quantity of electric charge by q.
The state (a) of Figure 16 is identical as state shown in figure 15, the current potential of the Si layer 311a of fixed broach electrode 302 with can
The current potential of the Si layer 311b of dynamic comb electrodes 303 is equal.That is, potential difference V=0.Therefore, without flow through electric current in load 320.This
When, the quantity of electric charge of surface charge Q6 is+6q, and the quantity of electric charge of surface charge Q5 is -8q, and the quantity of electric charge of surface charge Q4 is+2q.
In state (b), indicates that movable comb electrodes 303 are mobile to diagram left direction relative to fixed broach electrode 302, comb
The overlapping area of tooth is reduced to the state of half.With the reduction of overlapping area, the quantity of electric charge of surface charge Q4 is reduced to from+2q
The quantity of electric charge of+q, surface charge Q6 increase to+7q from+6q.As a result, Si layer 311b of the electric current I from movable comb electrodes 303
Flow to the Si layer 311a of fixed broach electrode 302.
If be further reduced from state (b) overlapping area, the electricity of surface charge Q4 while overlapping area is reduced
Lotus amount is also reduced.Then, if the overlapping area as shown in state (c) becomes zero, the quantity of electric charge of surface charge Q4 is become zero, table
The quantity of electric charge of surface charge Q6 becomes+8q.
Like this, if movable comb electrodes 303 are vibrated relative to fixed broach electrode 302, shown in Figure 16
State (a)~(c) by (a) → (b) → (c) → (b) → (a) → (b) → in a manner of repeated, load 320 in flow
Cross alternating current.In addition, when as being connected to the load of the high impedance limit for load 320, because of the quantity of electric charge of surface charge Q4
It does not change and overlapping area changes, so potential difference V also changes.In general, by adjusting load impedance
To seek the maximization of the electric power taken out.
- the 3 embodiment-
The electret elements of 1st embodiment are suitable for the interdigitated electrode structure actuator of MEMS shutter by the 3rd embodiment.Figure 17
Indicate the Sketch of the MEMS shutter 400 of present embodiment.In addition, for identical as vibration generating device 300 shown in Fig. 8
Structural detail impart identical symbol.I.e., MEMS shutter 400 is formed by processing SOI substrate, MEMS shutter 400 has
It is standby be fixed on the fixed broach electrode 302 of rectangular ring pedestal 301, be fixed on pedestal 301 by flexible support portion 305 can
Dynamic comb electrodes 303.Fixed broach electrode 302 and movable comb electrodes 303 constitute interdigitated electrode structure actuator.In movable comb electricity
Pole 303 is provided with shutter section 404, which forms opening 404a.
Between fixed broach electrode 302 and movable comb electrodes 303, actuator driving is applied by voltage source 401 and is used
Voltage.Control unit 402 controls the application voltage V of voltage source 401, makes the movable comb electrodes 303 provided with shutter section 404 to arrow
The direction of head R is mobile.It is configured in optical path in shutter section 404, matches in the optical path when by the movement of movable comb electrodes 303
When setting the opening 404a of shutter section 404, light passes through shutter section 404.On the other hand, by configuring shutter section 404 in the optical path
Non-open areas (shaded areas), light blocked by shutter section 404.
In addition, because the structure and forming method of fixed broach electrode 302 and movable comb electrodes 303, also oriented
The method that fixed broach electrode 302 forms electret is identical as above-mentioned 2nd embodiment, so omitting the description herein.
(action specification)
Figure 18~20 illustrate the drive actions of interdigitated electrode structure actuator.Figure 18 indicates that the application voltage V of voltage source 401 is V=0
The case where.In Figure 18, (a) indicates to act on power F1, F2 of movable comb electrodes 303, (b) indicates to apply voltage V and electric field
Relationship between E4.When applying voltage V=0, Si layers of 311a are same current potential with Si layers of 311b, with situation shown in Figure 15,16
For identical state.Between gap between fixed broach electrode 302 and movable comb electrodes 303 in G, formed by formula above-mentioned
(24) the electric field E4 represented by.By electric field E4, the power F1 illustrated to the right acts on movable comb electrodes 303.So that can
Dynamic comb electrodes 303 pull between the comb teeth of fixed broach electrode 302.
The power F1 electric field E4 make movable comb electrodes 303 in a manner of being drawn into fixed broach electrode 302 into
When row is mobile, as shown in Figure 18 (a), flexible support portion 305 deforms.As a result, passing through the bullet of flexible support portion 305
Power, the power F2 retracted to diagram left side act on movable comb electrodes 303.Movable comb electrodes 303 are balanced in power F1 and power F2
Position stop.
Figure 19 indicates that the case where voltage V is set as 0 < V < V1 will be applied.In this case, by previously described formula (22)
Middle applying equation (13), (14) formula (25) below obtained indicate the electric field E4 of G between gap.According to formula (24), (25) it is found that
The intensity of electric field E4 in Figure 19 dies down compared to when applying voltage V=0.As a result, being inhaled to the direction of fixed broach electrode 302
The electrostatic force F1 for drawing movable comb electrodes 303 becomes smaller, and (a) of such as Figure 19 of movable comb electrodes 303 is shown, mobile to diagram left
The position balanced to electrostatic force F1 and the elastic force F2 of flexible support portion 305.
E4=- (V1-V)/[g '+d (0/ ε 1 of ε)] ... (25)
Figure 20 indicates that the case where voltage V is set as V=V1 will be applied.At this point, the charge of surface charge Q5 and surface charge Q6
Measure equal, the potential difference in the electric double layer is equal with V1.As a result, the electric field E4 of G is zero between gap, fixed broach electrode 302
Electrostatic force F1 between movable comb electrodes 303 is also zero.Therefore, as shown in figure 20, the deformation of flexible support portion 305 is also
Zero.
As described above, in the present embodiment, by changing the application voltage V of voltage source 401 come to movable comb electrodes
303 carry out sliding driving, are able to carry out the shutter either on or off of shutter section 404.In addition, as shown in Figure 18~20, by combing
Electret is installed in tooth electrode, so that the intensity of the electric field E4 of G is maximum between applying voltage V=0 time slot.
Incidentally, the electrostatic force to play a role between the comb teeth in comb teeth actuator and electric field it is square directly proportional.Cause
This, without using electret and only by apply voltage V come driving comb actuator structure in the case where, apply voltage V with
The relationship of electrostatic F1 is such conic section shown in the line L1 of Figure 21.On the other hand, as described in this embodiment, foring
In the case where the comb teeth actuator of electret, the relationship for applying voltage V and electrostatic F1 is line L2.Line L2 be by line L1 to horizontal axis just
Direction moves the line for being equivalent to the amount of electrified voltage V1 of electret.Therefore, for equal application voltage Δ V, there is electret
Electrostatic force Δ fa when electrostatic force Δ Fb when body compares no electret becomes larger.That is, can be obtained when foring electret
The bigger electrostatic force compared with the only structure of external bias voltage.
As described above, electret elements have as shown in Fig. 4,7: Si layer 202, the SiO formed on the surface of Si layer 2022
Layer 201 and in SiO2The electret (surface charge Q2) nearby formed at the interface of the Si layer 202 in layer 201.Because constituting
The surface charge Q2 of electret is fixed on Si/SiO2Near interface, so SiO2Layer 201 can be functioned as protective film,
Improve the service life of electret.
Electret is formed in the following way: will form SiO on one side2The Si layer 202 of layer 201 maintains SiO2Layer 201
As the 1st temperature (about 500~700 DEG C) of semi-conductive state, on one side in Si layer 202 and SiO2Apply voltage between layer 201, and
And in the state of being applied with voltage, SiO will be formd2The Si layer 202 of layer 201 is from the 1st temperature change to SiO2Layer 201
Restore the 2nd temperature (for example, 300 DEG C or less Zuo You temperature) of insulating properties.
In this way, because by SiO2Mobile and fixed charge method forms electret in layer, even so
The electrode of the narrow gap position as the comb teeth side of comb electrodes shown in Fig. 8 or confined space configuration, also can be easily
Form electret.Because forming electret at narrow gap position to become easy, it is possible to gap size is designed smaller, thus
It improves as power generator, the performance of actuator.
Also, because charge and the electric field of equipment surface without direct relation are moved, in on-line treatment (electret
Body formation processing) when do not have to spend special effort, it will be able to charged by uniform charge density.In addition, such as Fig. 3 institute
Show, charge because forming electric double layer, the gap between the charge that interface is charged is very small, therefore even if small electricity
Position can also obtain big charge density.
In addition, having fixed broach electrode 302 and movable comb electricity opposite each other as shown in the 2nd embodiment
Pole 303, fixed broach electrode 302 are made of electret elements.Also, as electromechanical transducer (for example, vibration generating device
300) function, i.e., moved by movable comb electrodes 303, that is to say, that by movable comb electrodes 303 relative to
Fixed broach electrode 302 is displaced to carry out the conversion between electric energy and mechanical energy.
In addition, in the above-described embodiment, foring electret in 302 side of fixed broach electrode, but also may be constructed
To form electret in 303 side of movable comb electrodes.Also, it is not limited to make the side in a pair of of comb electrodes to be set as movable knot
Structure also can be set to a pair of of comb electrodes both sides and carry out mobile structure.
As electromechanical transducer, other than power generator, also with as shown in figure 17 for driving shutter section 404
Actuator, electret capacitor microphone etc..In the case where the electret elements of above embodiment, because not being such as patent text
Electret documented by offering 3 includes the structure of alkali metal ion like that, therefore can be coexisted with cmos device, for example, can be
The Si layer (mechanical floor) of pedestal 301 forms the circuit element of a part of the control unit 402 of Figure 17.As such circuit elements
Part, such as the amplifying circuit with driving circuit transistor, microphone or sensor FET or resistance, generating element are with whole
Stream diode etc..
In addition, making the electrode of electrode 302,303 comb structures in above-mentioned 2nd embodiment, but also can be set to
The parallel plate structure that clearance distance is changed.Thus, it is possible to which vibration generating device, the capacitor for parallel plate-type are transaudient
Device application electret elements.
In addition, in the above-described embodiment, to entire comprising fixed broach electrode 302 and movable comb electrodes 303
Equipment is heated to carry out on-line treatment, but locally can also only be heated by laser etc. related with the formation of electret
Region (it is desirable that charge SiO2Layer and the Si layer for wishing to flow through electric current).Amplifying circuit is can be also used for built-in as a result,
Equipment as electret microphone.
In addition, above explanation is an example, when explaining invention, specified particular for the above embodiment with
The corresponding relationship of the specified particular of scope of patent protection does not have any restriction and constraint.
The disclosure of basis for priority application below is incorporated herein as citation text.
Japanese patent application 2015 the 26839th (is applied) on 2 13rd, 2015.
The explanation of symbol
101,202,203,311a, 311b:Si layers；102,201:SiO2Layer；204,205,306,308:Si/SiO2Interface；
300: vibration generating device；301: pedestal；302: fixed broach electrode；303: movable comb electrodes；304: hammer；305: elasticity branch
Support part；310,310a, 310b: oxidation film；320: load；400:MEMS shutter；401: voltage source；402: control unit；404: fast
Door portion；G: clearance space.
Claims (6)
1. a kind of electret elements, which is characterized in that have:
Si layers；
In the SiO that Si layers of the surface is formed2Layer；And
In the SiO2The electret nearby formed with Si layers of the interface of layer；
Wherein, the surface charge for constituting the electret is fixed near the interface, and the SiO2Layer is stayed described in being used as
The protective film of polar body.
2. a kind of electromechanical transducer, which is characterized in that
Have the 1st electrode and the 2nd electrode that mutually relative configuration and at least one party can move,
1st electrode is made of electret elements described in claim 1,
It is moved by at least one party in the 1st electrode and the 2nd electrode, is turned between Lai Jinhang electric energy and mechanical energy
It changes.
3. electromechanical transducer according to claim 2, which is characterized in that
Described Si layers is made of Si substrate,
At least part for driving the circuit element of the electromechanical transducer is formed in the Si substrate.
4. electromechanical transducer according to claim 2 or 3, which is characterized in that
By the effect of external force, the electrode of the 1st electrode and at least one party in the 2nd electrode are moved to send out
Electricity.
5. electromechanical transducer according to claim 2 or 3, which is characterized in that have:
It is provided with the stationary part of the 1st electrode；
It is provided with the movable part of the 2nd electrode；
Alive voltage source is applied between the 1st electrode and the 2nd electrode；And
The application voltage of the voltage source is controlled to drive the control unit of the movable part.
6. a kind of manufacturing method of electret elements, is used to manufacture electret elements, which is characterized in that
SiO will be formd on one side2The Si layer of layer maintains the SiO2Layer becomes the 1st temperature of semi-conductive state, on one side described
Si layers and the SiO2Apply voltage between layer,
In the state of being applied with the voltage, make to form the SiO2The Si layers of layer are from the 1st temperature change to institute
State SiO2Layer restores the 2nd temperature of insulating properties；
Wherein, in the SiO2The electret for nearby forming the electret elements with Si layers of the interface of layer；
The surface charge for constituting the electret is fixed near the interface, and the SiO2Layer is used as the electret
Protective film.
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| JP2015-026839 | 2015-02-13 | ||
| JP2015026839A JP6569933B2 (en) | 2015-02-13 | 2015-02-13 | Electret element, electromechanical transducer, and method of manufacturing electret element |
| PCT/JP2016/053836 WO2016129597A1 (en) | 2015-02-13 | 2016-02-09 | Electret element, electromechanical converter and method for producing electret element |
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| JP2018088780A (en) * | 2016-11-29 | 2018-06-07 | 国立大学法人 東京大学 | Vibration power generation element |
| JP6338071B2 (en) * | 2016-11-29 | 2018-06-06 | 国立大学法人 東京大学 | Vibration power generation device |
| JP6338070B2 (en) * | 2016-11-29 | 2018-06-06 | 国立大学法人 東京大学 | Vibration power generation device |
| CN110417955A (en) * | 2018-04-28 | 2019-11-05 | Oppo广东移动通信有限公司 | Electronic equipment |
| JP6792249B2 (en) * | 2018-05-08 | 2020-11-25 | 国立大学法人 東京大学 | Vibration power generator |
| JP6985702B2 (en) | 2018-05-31 | 2021-12-22 | 国立大学法人 東京大学 | Vibration power generation device and vibration power generation element |
| JP7249597B2 (en) * | 2020-03-27 | 2023-03-31 | 国立大学法人 東京大学 | Method for manufacturing power generation element, and power generation element |
| JP2022082718A (en) * | 2021-02-04 | 2022-06-02 | 国立大学法人 東京大学 | Vibration power generation element |
| JP2021069280A (en) * | 2021-02-04 | 2021-04-30 | 国立大学法人 東京大学 | Vibration power generation element |
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| KR20170094278A (en) | 2017-08-17 |
| JP6569933B2 (en) | 2019-09-04 |
| CN107251402A (en) | 2017-10-13 |
| JP2016149914A (en) | 2016-08-18 |
| US20180041140A1 (en) | 2018-02-08 |
| EP3244527A1 (en) | 2017-11-15 |
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| EP3244527A4 (en) | 2018-10-17 |
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