CN107248606A - High partition ratio restructural power splitter - Google Patents
High partition ratio restructural power splitter Download PDFInfo
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- CN107248606A CN107248606A CN201710574178.0A CN201710574178A CN107248606A CN 107248606 A CN107248606 A CN 107248606A CN 201710574178 A CN201710574178 A CN 201710574178A CN 107248606 A CN107248606 A CN 107248606A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/04—Coupling devices of the waveguide type with variable factor of coupling
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Abstract
The invention discloses a kind of high partition ratio restructural power splitter, including metal ground plate and medium substrate, the medium substrate is arranged on metal ground plate, in addition to 3dB Wilkinson power splitters, 3dB branch line couplers, the first π types equivalent transmission line and the 2nd π type equivalent transmission lines being separately positioned on medium substrate；The 3dB Wilkinson power splitters are connected with the first π types equivalent transmission line, the 2nd π type equivalent transmission lines respectively, and the first π types equivalent transmission line, the 2nd π types equivalent transmission line are connected with 3dB branch line couplers respectively.The present invention can realize power output high partition ratio, and a wide range of interior continuous restructural of distribution ratio.
Description
Technical field
The invention belongs to radio frequency and technical field of micro communication, and in particular to a kind of high partition ratio restructural power splitter.It is main
To be applied to aerial array, frequency mixer and realtime power distribution and synthesis.
Background technology
As the important component of radio circuit front end, the research of power divider is with designing just increasingly by people
Attention.Power divider is referred to as power splitter, in large scale array antenna system and phased array radar system and power
In synthesizer, it is required for using the different power splitter of multiple power sharing ratios.And because the operation principle of RF Power Splitter is determined
The larger shortcoming of its volume is determined, the application meeting of multiple RF Power Splitters is further such that radio-frequency front-end is bulky, and produces
Cost increase.And power-division ratios restructural power splitter can replace multiple devices with a device, so it can reduce cost,
Performance and integrated level are improved, the equipment size of communication system is minimized.
At present, on distribution ratio restructural power splitter research primarily with regard to power-division ratios discrete restructural.No
But it is complicated, and allocation proportion is discrete, using limited.It is practical and the continuous restructural power splitter adjustable extent of distribution ratio is low
Property is low.Simultaneously because the change that conventional microstrip line power splitter is all based on characteristic impedance can cause power output distribution ratio to change
Principle design power splitter.But it is due to that high impedance microstrip line is difficult in technique, so the manufacture of high partition ratio power splitter is tired
Difficult, cost is too high.
The content of the invention
The purpose of the present invention is to propose to a kind of high partition ratio restructural power splitter, the high partition ratio of power can be realized and divided
With a wide range of interior continuously adjustabe of ratio.
High partition ratio restructural power splitter of the present invention, including metal ground plate and medium substrate, the medium base
Plate is arranged on metal ground plate, in addition to be separately positioned on medium substrate 3dB Wilkinson power splitters, 3dB branches
Line coupler, the first π types equivalent transmission line and the 2nd π type equivalent transmission lines；
The 3dB Wilkinson power splitters are connected with the first π types equivalent transmission line, the 2nd π type equivalent transmission lines respectively,
First π types equivalent transmission line, the 2nd π types equivalent transmission line are connected with 3dB branch line couplers respectively；
The 3dB Wilkinson power splitters include the first microstrip line, the second microstrip line, the 3rd microstrip line and isolation resistance
R, isolation resistance R two ends are connected with the right-hand member of the second microstrip line and the right-hand member of the 3rd microstrip line respectively, a left side for the second microstrip line
Right-hand member of the left end of end and the 3rd microstrip line with the first microstrip line is connected, and the left end of the first microstrip line is used as radiofrequency signal
Input；
The 3dB branch line couplers include the 4th microstrip line, the 5th microstrip line, the 6th microstrip line, the 7th microstrip line, the
Eight microstrip lines and the 9th microstrip line, left end, the left end of the 6th microstrip line of the two ends of the 4th microstrip line respectively with the 5th microstrip line
Connection, right-hand member, the right-hand member of the 6th microstrip line of the two ends of the 7th microstrip line respectively with the 5th microstrip line is connected, the 5th microstrip line
Left end of the right-hand member also with the 8th microstrip line is connected, and the left end of the right-hand member of the 6th microstrip line also with the 9th microstrip line is connected, and the 8th is micro-
Output end of the right-hand member of right-hand member with line and the 9th microstrip line respectively as radiofrequency signal.
The first π types equivalent transmission line includes the tenth microstrip line, isolation capacitance C3, isolation capacitance C4, varactor
D3 and varactor D4；The left end of tenth microstrip line is grounded after isolation capacitance C3, varactor D3, and the tenth is micro-
Right-hand member of the left end with line also with the second microstrip line is connected；The right-hand member of tenth microstrip line is through isolation capacitance C4, varactor D4
After be grounded, the left end of the right-hand member of the tenth microstrip line also with the 5th microstrip line is connected；
The 2nd π types equivalent transmission line includes the 11st microstrip line, isolation capacitance C1, isolation capacitance C2, the pole of transfiguration two
Pipe D1 and varactor D2；The left end of 11st microstrip line is grounded after isolation capacitance C1, varactor D1, and the 11st
Right-hand member of the left end of microstrip line also with the 3rd microstrip line is connected, and the right-hand member of the 11st microstrip line is through isolation capacitance C2, the pole of transfiguration two
It is grounded after pipe D2, the left end of the right-hand member of the 11st microstrip line also with the 6th microstrip line is connected.
Apply reverse direct current biasing electricity respectively at the two ends at the two ends of the varactor D3 and varactor D4
Press V2；
Apply reverse direct current biasing electricity respectively at the two ends at the two ends of the varactor D1 and varactor D2
Press V1；
And V2=Vmax-V1；
When wherein Vmax is varactor D1, varactor D2, varactor D3 and varactor D4 work
Maximum reverse bias voltage；This set causes the adjustable model of power-division ratios that the high partition ratio restructural power splitter is realized
Enclose bigger.
The characteristic impedance of first microstrip line, the 8th microstrip line and the 9th microstrip line is Z0, and physical length is λ/4；
4th microstrip line, the characteristic impedance of the 7th microstrip line are Z0, and physical length, which can appoint, to be taken；
Second microstrip line, the characteristic impedance of the 3rd microstrip line arePhysical length is λ/4；Described 5th is micro-
Characteristic impedance with line, the 6th microstrip line isPhysical length is λ/4；Tenth microstrip line, the 11st microstrip line
Characteristic impedance isPhysical length λ/12；The isolation resistance R=2*Z0.This set make it that the high partition ratio can
Each port reflectance factor for reconstructing power splitter is smaller, and the isolation between output port is larger, meets the working index of power splitter.
The present invention has advantages below：
(1) present invention has the advantages that high partition ratio, isolation are high, return loss is low and is easily achieved, and solves tradition
The shortcoming for being difficult to high partition ratio of power splitter.
(2) present invention is connected to π types between 3dB Wilkinson power splitters and 3dB branch line couplers etc. by regulation
The electrical length of transmission line is imitated, a wide range of interior continuously adjustabe of power output distribution ratio can be achieved, traditional reconfigurable power splitter is solved
The shortcoming that allocation proportion is not high and adjustable extent is low.
(3) present invention realizes that allocation proportion is adjustable by adjusting the equivalent electrical length of transmission line, solves traditional reconfigurable
Power splitter is difficult to the shortcoming of a wide range of continuously adjustabe of distribution ratio by adjusting transmission line characteristic impedance.
(4) microstrip line construction, medium substrate, metal ground plate in the present invention etc. can use common printed circuit
Plate technique makes, and has the advantages that to be easily integrated, is easy to processing and with low cost.
Brief description of the drawings
Fig. 1 is entire block diagram of the invention；
Fig. 2 is the structure chart of high partition ratio power splitter in the present invention；
Fig. 3 is the S parameter of high partition ratio power splitter in the present invention；
Fig. 4 is the structure chart of high partition ratio restructural power splitter in the present invention；
Fig. 5 is π type equivalent transmission line schematic diagrams in the present invention；
Fig. 6 changes for the characteristic impedance of π type equivalent transmission lines in the present invention；
Fig. 7 changes for the electrical length of π type equivalent transmission lines in the present invention；
Fig. 8 is the characteristic curve of varactor in the present invention；
Fig. 9 is the S parameter of high partition ratio restructural power splitter in the present invention；
In figure：1st, 3dB Wilkinson power splitters, 2,3dB branch line couplers, the 3, the first π type equivalent transmission lines, 4,
Two π type equivalent transmission lines, 5, metal ground plate, 6, medium substrate, the 11, first microstrip line, the 12, second microstrip line, the 13, the 3rd
Microstrip line, the 21, the 4th microstrip line, the 22, the 5th microstrip line, the 23, the 6th microstrip line, the 24, the 7th microstrip line, the 25, the 8th micro-strip
Line, the 26, the 9th microstrip line, the 31, the tenth microstrip line, the 41, the 11st microstrip line.
Embodiment
The invention will be further described below in conjunction with the accompanying drawings.
High partition ratio restructural power splitter, including 3dB Wilkinson power splitters 1,3dB branch lines as shown in Figure 1 and Figure 4
Coupler 2, the first π types equivalent transmission line 3, the 2nd π types equivalent transmission line 4, metal ground plate 5 and medium substrate 6.The medium
The model Arlon AD430 of substrate 6, dielectric constant is 4.3, and substrate thickness is 0.8mm, and loss tangent is 0.003；Institute
The thickness for stating metal ground plate 5 is 0.1mm.
As shown in Figure 1 and Figure 4,3dB Wilkinson power splitters 1,3dB branch line couplers 2, the first π type effective transmissions
The π types equivalent transmission line 4 of line 3 and the 2nd is separately positioned on medium substrate 6；Medium substrate 6 is arranged on metal ground plate 5.Institute
State 3dB Wilkinson power splitters 1 to be connected with the first π types equivalent transmission line 3, the 2nd π types equivalent transmission line 4 respectively, the first π types
Equivalent transmission line 3, the 2nd π types equivalent transmission line 4 are connected with 3dB branch line couplers 2 respectively.
As shown in Figure 1 and Figure 4, the 3dB Wilkinson power splitters 1 include the first microstrip line 11, the second microstrip line 12,
3rd microstrip line 13 and isolation resistance R, the right-hand member and the 3rd microstrip line of isolation resistance R two ends respectively with the second microstrip line 12
13 right-hand member connection, the right-hand member of the left end of the second microstrip line 12 and the left end of the 3rd microstrip line 13 with the first microstrip line 11 connects
Connect, the left end of the first microstrip line 11 as radiofrequency signal input.
As shown in Figure 1 and Figure 4, the 3dB branch line couplers 2 include the 4th microstrip line 21, the 5th microstrip line the 22, the 6th
Microstrip line 23, the 7th microstrip line 24, the 8th microstrip line 25 and the 9th microstrip line 26, the two ends of the 4th microstrip line 21 are respectively with the 5th
The left end connection of the left end of microstrip line 22, the 6th microstrip line 23, the two ends of the 7th microstrip line 24 respectively with the 5th microstrip line 22
The right-hand member connection of right-hand member, the 6th microstrip line 23, the left end of the right-hand member of the 5th microstrip line 22 also with the 8th microstrip line 25 is connected, and the 6th
Left end of the right-hand member of microstrip line 23 also with the 9th microstrip line 26 is connected, the right-hand member of the 8th microstrip line 25 and the right side of the 9th microstrip line 26
Hold the output end respectively as radiofrequency signal.
As shown in Figure 1 and Figure 4, the first π types equivalent transmission line 3 includes the tenth microstrip line 31, isolation capacitance C3, isolation
Electric capacity C4, varactor D3 and varactor D4；The left end of tenth microstrip line 31 is through isolation capacitance C3, the pole of transfiguration two
It is grounded after pipe D3, the right-hand member of the left end of the tenth microstrip line 31 also with the second microstrip line 12 is connected；The right-hand member warp of tenth microstrip line 31
It is grounded after isolation capacitance C4, varactor D4, the left end of the right-hand member of the tenth microstrip line 31 also with the 5th microstrip line 22 is connected；Every
Effect from electric capacity C3 and isolation capacitance C4 is to prevent direct voltage source V1 from producing influence to the radiofrequency signal of power splitter.
As shown in Figure 1 and Figure 4, the 2nd π types equivalent transmission line 4 include the 11st microstrip line 41, isolation capacitance C1, every
From electric capacity C2, varactor D1 and varactor D2；The left end of 11st microstrip line 41 is through isolation capacitance C1, the pole of transfiguration two
It is grounded after pipe D1, the right-hand member of the left end of the 11st microstrip line 41 also with the 3rd microstrip line 13 is connected, the right side of the 11st microstrip line 41
End is grounded after isolation capacitance C2, varactor D2, the left end of the right-hand member of the 11st microstrip line 41 also with the 6th microstrip line 23
Connection；Isolation capacitance C1 and isolation capacitance C2 effect are to prevent direct voltage source V2 from producing shadow to the radiofrequency signal of power splitter
Ring.
As shown in Figure 1 and Figure 4, apply respectively at the two ends at the two ends of the varactor D3 and varactor D4
Reverse DC offset voltage V2；Apply respectively reversely at the two ends at the two ends of the varactor D1 and varactor D2
DC offset voltage V1；And V2=Vmax-V1；Wherein Vmax is varactor D1, varactor D2, varactor D3
Maximum reverse bias voltage when being worked with varactor D4.This set causes the high partition ratio restructural power splitter real
Existing power-division ratios adjustable extent is bigger.
High partition ratio restructural power splitter of the present invention, first microstrip line 11, the 8th microstrip line 25 and the 9th
The characteristic impedance of microstrip line 26 is Z0, and physical length is λ/4；4th microstrip line 21, the characteristic impedance of the 7th microstrip line 24
For Z0, physical length, which can appoint, to be taken；Second microstrip line 12, the characteristic impedance of the 3rd microstrip line 13 arePhysical length
For λ/4；5th microstrip line 22, the characteristic impedance of the 6th microstrip line 23 arePhysical length is λ/4；Described tenth
Microstrip line 31, the characteristic impedance of the 11st microstrip line 41 arePhysical length λ/12；The isolation resistance R=2*Z0.This
Kind set and make it that each port reflectance factor of the high partition ratio restructural power splitter is smaller, isolation between output port compared with
Greatly, the working index of power splitter is met.
High partition ratio, which is described in detail, to be realized to the present invention below, so that working frequency f is in 2.5GHz as an example：
For convenience of explanation and understand, by the first π types equivalent transmission line 3, the 2nd π types of high partition ratio restructural power splitter
Equivalent transmission line 4 removes, and only retains the 11st microstrip line 41, that is, a high partition ratio power splitter is constituted, referring to Fig. 2.Wherein,
The length of 11 microstrip lines 41 is L2, and width is 1.49mm；A left side for the first microstrip line 11 in 3dB Wilkinson power splitters 1
End is as power input P1, and length is 5mm, and width is 1.49mm, and the length of the second microstrip line 12 and the 3rd microstrip line 13 is equal
For 16.8mm, width is 0.75mm, and isolation resistance R resistance is 100 Ω.During normal work, microwave signal is from the first microstrip line
11 power input P1 inputs, export from the second microstrip line 12 and the 3rd microstrip line 13, can be obtained according to odd-even mode analytical method
Arrive, the power output constant amplitude of 3dB Wilkinson power splitters is exported in the same direction.
The length of the 5th microstrip line 22 and the 6th microstrip line 23 in 3dB branch line couplers 2 is 18.67mm, and width is
2.6mm；The length of 4th microstrip line 21 and the 7th microstrip line 24 is 15.7mm, and width is 1.49mm；8th microstrip line 25 and
The length of nine microstrip lines 26 is 5mm, and width is 1.49mm.Unit amplitude is inputted as shown in Fig. 2 working as from the left end of the 5th microstrip line 22
For 1 ripple when：According to odd-even mode analytical method, power B1's, the 6th microstrip line 23 received by the left end of the 5th microstrip line 22
The right-hand member institute of power B3 received by power B2, the right-hand member of the 8th microstrip line 25 and the 9th microstrip line 26 received by left end
The power B4 received meets formula (1-1)：
And be e when the left end of the 6th microstrip line 23 inputs amplitude simultaneouslyjθ(θ is that the 5th microstrip line 22 and the 6th microstrip line 23 are defeated
Enter the phase difference of signal) ripple when, can be obtained according to principle of stacking, power B1, B2, B3, the B4 received meets formula (1-2)；
When the phase of the 5th microstrip line 22 and the input signal of the 6th microstrip line 23 changes, 3dB branch line couplers 2
Power output ratio will change for P2/P3 (or B3/B4).Based on the principle, as shown in Fig. 2 by 3dB Wilkinson
The right-hand member of the second microstrip line 12 in power splitter 1 connects with the left end of the 5th microstrip line 22, and the right-hand member of the 3rd microstrip line 13 passes through
11st microstrip line 41 connects with the left end of the 6th microstrip line 23 so that the signal inputted from P1 ends passes through 3dB Wilkinson
The grade score of power splitter 1 is matched somebody with somebody, then produces phase difference by the 11st microstrip line 41, recycles 3dB branch line couplers 2 to be divided again
Match somebody with somebody, finally realize that output end P2, output end P3 have high partition ratio.
As shown in figure 3, be the S parameter result of high partition ratio power splitter, wherein, S (1.1) is the return loss of P1 ports,
The smaller the better during real work, S (1.2) is the transmission coefficient of P1 ports to P2 ports, and S (1.3) is P1 ports to P3 ports
Transmission coefficient, S (2.3) is the isolation of P2 ports to P3 ports, the smaller the better during real work.As shown in figure 3, with the tenth
The length L2 changes of one microstrip line 41, S (1.1) and S (2.3) are superior to 40dB, meet work requirements.High partition ratio power splitter
Power output distribution ratio K=P3/P2=S (1.3)-S (1.2), as L2 by 0 increases to 20mm, distribution ratio K is changed by 0dB
To -40dB (about 1:1~1:10000) high partition ratio design, is realized, the maximum point that can be realized much larger than existing power splitter
Proportioning.
The a wide range of interior continuously adjustabe of the achievable power output distribution ratio of the present invention is described in detail below：
As shown in figure 4, the distribution ratio real-time continuous restructural (i.e. adjustable) in order to realize high partition ratio power splitter, in 3dB
Two π type equivalent transmission lines, i.e., height of the present invention are accessed between Wilkinson power splitters 1 and 3dB branch line couplers 2
Distribution ratio restructural power splitter, it can realize that the input signal phase difference of 3dB branch line couplers 2 is adjustable so that final whole
The power output distribution ratio restructural of individual power splitter.The ginseng of the 3dB Wilkinson power splitters 1 and 3dB branch line couplers 2
Number is identical with the parameter in Fig. 2；Bending has been carried out to the second microstrip line 12 and the 3rd microstrip line 13 so that the size of power splitter more
It is small, on device function without influence.
As shown in figure 5, producing the schematic diagram of phase difference for π types equivalent transmission line, 5 (a) is a normal transmission line, Fig. 5
(b) it is π type equivalent transmission lines, is made up of a short transmission line and two electric capacity in parallel.According to parity mode correlation theory, it can obtain
To the transfer matrix of normal transmission line：
Wherein：Y, Z and θ are the admittance, impedance and electrical length (phase) of transmission line respectively.
According to parity mode correlation theory, the transfer matrix of π type equivalent transmission lines can obtain：
Wherein：Y0、Z0And θ0It is admittance, impedance and the electrical length of microstrip line in π type equivalent transmission lines respectively, C is can power transformation
The capacitance of appearance, YCFor the admittance of variable capacitance；
Make formula (1-3) and formula (1-4) equal, can obtain：
Wherein：F is working frequency.
In summary, as long as selecting the characteristic impedance of transmission line and electrical length in suitable variable capacitance, pi-network, just
Specific transmission line can be substituted.Change the capacitance of variable capacitance, it is possible to change the characteristic impedance of π type equivalent transmission lines
And electrical length.In order to realize that the distribution ratio of restructural power splitter after equivalent substitution is as high as possible, distribution ratio adjustable extent is as far as possible
Greatly.The variable capacitance of OK range must be obtained so that the characteristic impedance of π type equivalent transmission lines is most relative to unit impedance (50 Ω)
May be small, and electrical length is as big as possible.Choosing the length that working frequency f is microstrip line in 2.5GHz, π type equivalent transmission lines is
6mm, when width is 0.5mm, S parameter scanning is carried out to variable capacitance C and is emulated, the result such as Fig. 6 and Fig. 7 is obtained, according to Fig. 6 and
When Fig. 7 can be seen that capacitance between 0pF~3pF, electrical length is changed greatly and characteristic impedance is smaller, is suitable for the present invention's
Power-division ratios are adjusted.
The present invention uses varactor as variable capacitance, can be electric by adjusting the direct current reverse bias of varactor
Press to change the capacitance of varactor, so as to realize the characteristic impedance of π type equivalent transmission lines and the change of electrical length.Fig. 4
In varactor D1, varactor D2, varactor D3 and varactor D4 model be SMV2020,
The change of the capacitance of varactor is as shown in Figure 8 under direct current reverse bias voltage；Direct current reverse bias voltage V1 0V~
When being adjusted between 20V, it can obtain capacitance C and change between 0.286pF~3.315pF, can be as the varactor in the present invention.
Isolation capacitance value C1, isolation capacitance value C2, isolation capacitance value C3 and isolation capacitance value C4 are 8pF.V1 is adjusted between 0~20V
When, maximum voltage Vmax=20V, so V2=20-V1.
Fig. 9 is the S parameter result of high partition ratio restructural power splitter in Fig. 4, when changing with V1 between 0~20V, high score
The power output distribution ratio of proportioning restructural power splitter consecutive variations between -15.5dB~15.5dB, the high partition ratio can be weighed
The return loss S (1.1) and isolation S (2.3) of structure power splitter are superior to 25dB.
Summary performance indications can be seen that the present invention realize power splitter power output high partition ratio 0dB~-
40dB, the reachable -40dB of maximum allocated ratio, and distribution ratio is in a wide range of continuously adjustabes of -15.5dB~15.5dB.
Above description is only example of the present invention, does not constitute any limitation of the invention.Obviously for this
, all may be without departing substantially from the principle of the invention, structure after present invention and principle has been understood for the professional in field
In the case of, the various modifications and variations in form and details are carried out, but these modifications and variations based on inventive concept are still
Within the claims of the present invention.
Claims (4)
1. a kind of high partition ratio restructural power splitter, including metal ground plate (5) and medium substrate (6), the medium substrate (6)
It is arranged on metal ground plate (5), it is characterised in that：Also include the 3dB Wilkinson being separately positioned on medium substrate (6)
Power splitter (1), 3dB branch line couplers (2), the first π types equivalent transmission line (3) and the 2nd π types equivalent transmission line (4)；
The 3dB Wilkinson power splitters (1) respectively with the first π types equivalent transmission line (3), the 2nd π types equivalent transmission line (4)
Connection, the first π types equivalent transmission line (3), the 2nd π types equivalent transmission line (4) are connected with 3dB branch line couplers (2) respectively；
The 3dB Wilkinson power splitters (1) include the first microstrip line (11), the second microstrip line (12), the 3rd microstrip line
And isolation resistance R, isolation resistance R two ends right-hand member respectively with the second microstrip line (12) and the right side of the 3rd microstrip line (13) (13)
The left end of end connection, the left end of the second microstrip line (12) and the 3rd microstrip line (13) connects with the right-hand member of the first microstrip line (11)
Connect, the left end of the first microstrip line (11) as radiofrequency signal input；
The 3dB branch line couplers (2) include the 4th microstrip line (21), the 5th microstrip line (22), the 6th microstrip line (23), the
Seven microstrip lines (24), the 8th microstrip line (25) and the 9th microstrip line (26), the two ends of the 4th microstrip line (21) are micro- with the 5th respectively
The left end connection of left end with line (22), the 6th microstrip line (23), the two ends of the 7th microstrip line (24) respectively with the 5th microstrip line
(22) the right-hand member connection of right-hand member, the 6th microstrip line (23), the right-hand member of the 5th microstrip line (22) also with the 8th microstrip line (25)
Left end is connected, and the left end of the right-hand member of the 6th microstrip line (23) also with the 9th microstrip line (26) is connected, the right side of the 8th microstrip line (25)
Output end of the right-hand member of end and the 9th microstrip line (26) respectively as radiofrequency signal.
2. high partition ratio restructural power splitter according to claim 1, it is characterised in that：The first π type effective transmissions
Line (3) includes the tenth microstrip line (31), isolation capacitance C3, isolation capacitance C4, varactor D3 and varactor D4；It is described
The left end of tenth microstrip line (31) is grounded after isolation capacitance C3, varactor D3, the left end of the tenth microstrip line (31) also with
The right-hand member connection of second microstrip line (12)；The right-hand member of tenth microstrip line (31) is grounded after isolation capacitance C4, varactor D4,
Left end of the right-hand member of tenth microstrip line (31) also with the 5th microstrip line (22) is connected；
The 2nd π types equivalent transmission line (4) includes the 11st microstrip line (41), isolation capacitance C1, isolation capacitance C2, transfiguration two
Pole pipe D1 and varactor D2；The left end of 11st microstrip line (41) is grounded after isolation capacitance C1, varactor D1, the
Right-hand member of the left end of 11 microstrip lines (41) also with the 3rd microstrip line (13) is connected, and the right-hand member of the 11st microstrip line (41) is through isolation
It is grounded after electric capacity C2, varactor D2, the left end of the right-hand member of the 11st microstrip line (41) also with the 6th microstrip line (23) is connected.
3. high partition ratio restructural power splitter according to claim 2, it is characterised in that：The varactor D3's
Two ends and varactor D4 two ends apply reverse DC offset voltage V2 respectively；
Apply reverse DC offset voltage V1 respectively at the two ends at the two ends of the varactor D1 and varactor D2；
And V2=Vmax-V1；
Wherein：Vmax be varactor D1, varactor D2, varactor D3 and varactor D4 work when most
Big reverse bias voltage.
4. the high partition ratio restructural power splitter according to Claims 2 or 3, it is characterised in that：First microstrip line
(11), the characteristic impedance of the 8th microstrip line (25) and the 9th microstrip line (26) is that physical length is λ/4；
Second microstrip line (12), the characteristic impedance of the 3rd microstrip line (13) arePhysical length is λ/4；Described
Five microstrip lines (22), the characteristic impedance of the 6th microstrip line (23) arePhysical length is λ/4；Tenth microstrip line
(31), the characteristic impedance of the 11st microstrip line (41) isPhysical length λ/12；The isolation resistance R=2*Z0.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261990A (en) * | 2020-01-16 | 2020-06-09 | 东方红卫星移动通信有限公司 | Complementary reconfigurable power divider based on reflection-type phase shifter |
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| CN114335952A (en) * | 2021-12-29 | 2022-04-12 | 重庆两江卫星移动通信有限公司 | Filtering power divider with reconfigurable phase difference and distribution ratio and antenna system |
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