CN107240614B - 红外焦平面多色探测器及其制作方法 - Google Patents
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- 238000000034 method Methods 0.000 description 12
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- 238000005516 engineering process Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
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- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
本申请公开了一种红外焦平面多色探测器,包括衬底、以及形成于衬底上的外延层,所述衬底上开设有至少一个窗口,所述外延层暴露于所述窗口。本申请还公开了一种红外焦平面多色探测器的制作方法,包括:(1)、提供一红外焦平面探测器;(2)、将掩膜版与红外焦平面探测器的衬底进行对准,然后曝光;(3)、刻蚀衬底,在衬底上形成窗口。本发明探测器中,衬底不去除的,探测0.9~1.7微米,衬底去除的,探测0.4~1.7微米;使用读出电路对两种像素进行减法操作,即可探测0.4~0.9um,实现三色探测能力。
Description
技术领域
本申请属于半导体器件领域,特别是涉及一种红外焦平面多色探测器及其制作方法。
背景技术
近年来,随着红外成像技术的发展,铟镓砷红外焦平面作为短波红外的关键成像器件,其发展一直被人们重视。然而,传统的铟镓砷红外焦平面,由于InP衬底对0.9微米及以下波长的光的吸收作用,仅能探测到0.9~1.7um的红外光。随着技术的发展,人们能够将InP衬底减得很薄,甚至完成去掉,这样就可以实现0.4~1.7微米的探测。然而,这些技术都只能实现一个较宽光谱范围之内的探测。随着各种探测和对抗技术的发展,对短波红外在多色探测能力方面提出了更高的要求。
发明内容
本发明的目的在于提供一种红外焦平面多色探测器及其制作方法,以克服现有技术中的不足。
为实现上述目的,本发明提供如下技术方案:
本申请实施例公开一种红外焦平面多色探测器,包括衬底、以及形成于衬底上的外延层,所述衬底上开设有至少一个窗口,所述外延层暴露于所述窗口。
优选的,在上述的红外焦平面多色探测器中,所述衬底上开设有多个窗口,该多个窗口均匀分布于所述衬底上。
优选的,在上述的红外焦平面多色探测器中,该红外焦平面多色探测器为平面型PIN铟镓砷探测器。
优选的,在上述的红外焦平面多色探测器中,所述衬底为半绝缘InP衬底。
优选的,在上述的红外焦平面多色探测器中,所述红外焦平面多色探测器中,衬底部分探测0.9~1.7微米的红外光,所述窗口部分探测0.4~1.7微米的红外光。
优选的,在上述的红外焦平面多色探测器中,所述外延层包括光敏元芯片,该光敏元芯片为铟镓砷芯片。
优选的,在上述的红外焦平面多色探测器中,所述外延层还包括硅读出电路,该硅读出电路与光敏元芯片互连。
相应的,本申请还公开了一种红外焦平面多色探测器的制作方法,包括:
(1)、提供一红外焦平面探测器;
(2)、将掩膜版与红外焦平面探测器的衬底进行对准,然后曝光;
(3)、刻蚀衬底,在衬底上形成窗口。
本申请还公开了一种红外焦平面多色探测器的探测方法,硅读出电路分别读取衬底未去除部位的红外光波长λ1、窗口部位的红外光波长λ2,并求取λ1和λ2的差值。
与现有技术相比,本发明的优点在于:本发明中,衬底被去除部分的像素可以探测到可见光至1.7微米的红外光,而未被去除的部分仅可以探测到0.9至1.7微米的红外光。通过控制读出电路对像素进行读出、相减等各种操作,即可实现对可见光(0.4~0.9um)、不可见红外光(0.9~1.7um)和两者叠加(0.4~1.7um)三种光源的三色成像。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请中记载的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1所示为本发明具体实施例中InGaAs PIN焦平面探测器芯片衬底去除前的示意图(A区域为衬底未去除部分);
图2所示为本发明具体实施例中InGaAs PIN焦平面探测器芯片衬底去除后的示意图(A区域为衬底未去除部分,B区域窗口部分)。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行详细的描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
结合图1和图2所示,本实施例公开了一种红外焦平面多色探测器,包括衬底、以及形成于衬底上的外延层,衬底上开设有至少一个窗口B,外延层暴露于窗口。
进一步地,衬底上开设有多个窗口B,该多个窗口均匀分布于衬底上。
该技术方案中,窗口可以为条形,其可以是横向间隔阵列,也可以是纵向间隔阵列分布;在其他实施例中,窗口还可以为矩形等规则形状,也可以为其他非规则形状,窗口之间可以沿列、行、对角线间隔分布。
优选的,该红外焦平面多色探测器为平面型PIN铟镓砷探测器。
进一步地,衬底为半绝缘InP衬底。
进一步地,外延层包括光敏元芯片,该光敏元芯片为铟镓砷芯片。
该实施例的红外焦平面多色探测器中,衬底部分探测0.9~1.7微米的红外光,窗口部分探测0.4~1.7微米的红外光。
在其他实施例中,光敏元芯片还可以为锑化铟(InSb)芯片或碲镉汞(HgCdTe)芯片或铟砷锑(InAsSb)芯片或铟砷/镓锑(InAs/GaSb)芯片或镓砷/铝镓砷(GaAs/AlGaAs)芯片。
进一步地,外延层还包括硅读出电路,该硅读出电路与光敏元芯片互连。
红外焦平面多色探测器的制作方法包括:
(1)、制备常规的InGaAs PIN焦平面探测器芯片如图1所示。
(2)、使用掩膜板(与窗口分布对应)对焦平面的衬底进行对准、曝光和显影。
对准的方法,可以采取和探测芯片定位边对准的方法,也可以通过在制备焦平面时使用刻蚀的方法钻透衬底以进行定位的方法。
(3)、刻蚀和去除部分衬底使用湿法或者干法ICP等刻蚀衬底。
(4)、去胶。去除的部分可以是对角,隔行,隔列等任意人为操作的方法,结果去胶后结果如图2所示。
(5)、使用该方法,可以在铟镓砷焦平面芯片进光面形成进行可控的衬底去除。衬底被去除部分的像素可以探测到可见光至1.7微米的红外光,而未被去除的部分仅可以探测到0.9至1.7微米的红外光。
(6)、通过控制读出电路对像素进行读出、相减等各种操作,即可实现对可见光(0.4~0.9um)、不可见红外光(0.9~1.7um)和两者叠加(0.4~1.7um)三种光源的三色成像。
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。
Claims (7)
1.一种红外焦平面多色探测器,其特征在于,包括半绝缘InP衬底、以及形成于衬底上的外延层,所述衬底上开设有至少一个窗口,所述外延层暴露于所述窗口,
所述外延层包括光敏元芯片,
所述外延层还包括硅读出电路,该硅读出电路与光敏元芯片互连,
硅读出电路分别读取衬底未去除部位的红外光波长λ1、窗口部位的可见光至红外光波长λ2,并求取λ1和λ2的读取值的差值。
2.根据权利要求1所述的红外焦平面多色探测器,其特征在于:所述衬底上开设有多个窗口,该多个窗口均匀分布于所述衬底上。
3.根据权利要求1所述的红外焦平面多色探测器,其特征在于:该红外焦平面多色探测器为平面型PIN铟镓砷探测器。
4.根据权利要求3所述的红外焦平面多色探测器,其特征在于:所述红外焦平面多色探测器中,衬底部分探测0.9~1.7微米的红外光,所述窗口部分探测可见光至1.7微米的红外光。
5.根据权利要求3所述的红外焦平面多色探测器,其特征在于:所述光敏元芯片为铟镓砷芯片。
6.权利要求1至5任一所述的红外焦平面多色探测器的制作方法,其特征在于,包括:
(1)、提供一红外焦平面探测器;
(2)、将掩膜版与红外焦平面探测器的衬底进行对准,然后曝光;
(3)、刻蚀衬底,在衬底上形成窗口。
7.一种红外焦平面多色探测器的探测方法,其特征在于:
红外焦平面多色探测器包括半绝缘InP衬底、以及形成于衬底上的外延层,所述衬底上开设有至少一个窗口,所述外延层暴露于所述窗口,
所述外延层包括光敏元芯片,
所述外延层还包括硅读出电路,该硅读出电路与光敏元芯片互连,
硅读出电路分别读取衬底未去除部位的红外光波长λ1、窗口部位的可见光至红外光波长λ2,并求取λ1和λ2的读取值的差值。
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