CN107236306A - A kind of graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material preparation method - Google Patents
A kind of graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material preparation method Download PDFInfo
- Publication number
- CN107236306A CN107236306A CN201710626504.8A CN201710626504A CN107236306A CN 107236306 A CN107236306 A CN 107236306A CN 201710626504 A CN201710626504 A CN 201710626504A CN 107236306 A CN107236306 A CN 107236306A
- Authority
- CN
- China
- Prior art keywords
- parts
- weight
- encapsulating material
- polymerization thing
- based polymerization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material preparation method, the fluorine silicon epoxy-based polymerization thing that the present invention is prepared by the process of free radical and hydrolytic condensation, it has been provided simultaneously with organosilicon, the property of Organic fluoride, and cycloaliphatic epoxy resin is modified with it, impart the excellent weatherability of encapsulating material and surface property;The modified graphene oxide added in encapsulating material, with thermal conductivity height, the low feature of the coefficient of expansion so that the internal stress changing value scope of encapsulating material after hardening is smaller, and mechanical performance and impact resistance are excellent, can high temperature resistant.
Description
Technical field
Field is manufactured the present invention relates to electronic device, and in particular to a kind of graphene doped fluor-containing silicon epoxy-based polymerization thing envelope
Package material preparation method.
Background technology
Encapsulation be using specific encapsulating material will arrange each element solidification of the electronic product that connects wherein with environment
The safeguard measure of isolation.The intrusion for preventing moisture, dust and pernicious gas to electronic component is played, slows down vibrations, prevents external force
Damage and the effect of stable element parameter.
Encapsulating material will have good in addition to it should have good insulating properties, chemical-resistant and agent of low hygroscopicity, also
High temperature resistant low temperature (- 40-120 DEG C) performance and shock resistance.Existing encapsulating material mainly contain epoxy resin, filler and
Curing agent.Because the material of electronic product has diversity, difference is there is between the thermal coefficient of expansion of epoxy resin, therefore
When the packaging body that encapsulating material and electronic product are constituted ties up to temperature shock, the interelement of encapsulating material and electronic product can be produced
Heat stress, encapsulation system is cracked and ftractureed, and causes the damage of embedded components.Can be to a certain degree although adding filler
The upper cure shrinkage for reducing encapsulating material, heat release when preventing from ftractureing, reducing solidification, but filler disperseing in the epoxy
Property it is poor, can increase the initial viscosity of encapsulating material, reduce manufacturability, and prevent cracking effect it is bad, obtained envelope
Package material or easily cracking.
The content of the invention
The present invention provides a kind of graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material preparation method, and the present invention passes through
Fluorine silicon epoxy-based polymerization thing prepared by the process of free radical and hydrolytic condensation, has been provided simultaneously with organosilicon, the property of Organic fluoride,
And cycloaliphatic epoxy resin is modified with it, impart the excellent weatherability of encapsulating material and surface property;Add in encapsulating material
Plus modified graphene oxide, with thermal conductivity is high, the low feature of the coefficient of expansion so that the internal stress of encapsulating material after hardening
Changing value scope is smaller, and mechanical performance and impact resistance are excellent, can high temperature resistant.
To achieve these goals, the invention provides a kind of graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material
Preparation method, this method comprises the following steps:
(1)Prepare fluorine silicon epoxy-based polymerization thing
By 30-45 parts by weight epoxide containing aliphatic ring acrylic monomers, 10-20 parts by weight of ethylene base silane monomers and 50-100 weight
The mixing of part acetone is measured, magnetic agitation is uniform, and 50-80 DEG C of temperature is heated under nitrogen protection, add and trigger after temperature is constant
Agent 2-5 parts by weight, continue to heat 3-5h, obtained product are rotated, remove after solvent and accessory substance, obtain product containing ring
Epoxide polysiloxanes;
The above-mentioned 5-15 of based polysiloxane containing epoxy parts by weight, 10-35 parts by weight are contained into fluorine based silicone, water, catalyst and 50-
100 pbw acetones are mixed, and are stirred, are heated to 60-90 DEG C, 5-8h is reacted under a nitrogen, and product is rotated and removed
Solvent and accessory substance, obtain fluorine silicon epoxy-based polymerization thing.
(2)Prepare modified graphene oxide
Weigh 4-6 parts by weight graphene oxides to be added in the deionized water of 600-800 parts by weight, and add 400-500 weight
Part absolute ethyl alcohol, the ultrasonic disperse 20-30min under 300-400W power adds 6-7 parts by weight KH-560 after disperseing, and continues super
Sound disperses 1-2h, is centrifuged after disperseing with 4000-5000r/min rotating speeds, obtains and ion-cleaning is spent after sediment 3-5 times;
By the sediment after above-mentioned washing in mass ratio 1:(15-25)Add in deionized water, it is ultrasonic under 200-250W power
12-24 parts by weight hydrazine hydrates are added after scattered 35-45min, continue centrifugation point after ultrasound 3-5h, ultrasound at a temperature of 60-70 DEG C
From sediment is obtained, it is washed with deionized and is put into neutrality in baking oven, 4-6h is dried at a temperature of 120-130 DEG C, you can
To modified graphene oxide;
(3)According to following parts by weight dispensing:
13-15 parts of epoxy resin
Above-mentioned modified graphene oxide 3-6 parts
1-1.5 parts of methylnadic anhydride
Above-mentioned 16-18 parts of fluorine silicon epoxy-based polymerization thing
0.5-1 parts of titante coupling agent
1-3 parts of containing hydrogen silicone oil crosslinking agent;
(4)Mixed in proportion by said components, heating stirring is carried out mixture to well mixed in vacuum degasing machine
Deaeration, inclined heated plate is 5-7h;
Mixture after the deaeration is added in the hopper of double screw extruder, screw speed is set as 600-800r/
Min, by melting extrusion, water cooling pelletizing obtains pellet;Then, low temperature high-pressure drying is carried out, injection machine injection molding is used, prepared
Obtain graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material.
Embodiment
Embodiment one
30 parts by weight epoxide containing aliphatic ring acrylic monomers, 10 parts by weight of ethylene base silane monomers and 50 pbw acetones are mixed
Close, magnetic agitation is uniform, and temperature 50 C is heated under nitrogen protection, the parts by weight of initiator 2 are added after temperature is constant, continue
3h is heated, obtained product is rotated, removes after solvent and accessory substance, obtains product based polysiloxane containing epoxy.
The parts by weight of above-mentioned based polysiloxane containing epoxy 5,10 parts by weight are contained into fluorine based silicone, water, catalyst and 50 weight
Part acetone mixing, is stirred, is heated to 60 DEG C, 5h is reacted under a nitrogen, and product revolving is removed into solvent and accessory substance,
Obtain fluorine silicon epoxy-based polymerization thing.
Weigh 4 parts by weight graphene oxides to be added in the deionized water of 600-800 parts by weight, and add 400 parts by weight
Absolute ethyl alcohol, the ultrasonic disperse 20min under 300W power adds 6 parts by weight KH-560 after disperseing, continue ultrasonic disperse 1h, point
Centrifuged after dissipating with 4000r/min rotating speeds, obtain and ion-cleaning is spent after sediment 3-5 times.
By the sediment after above-mentioned washing in mass ratio 1:15 add in deionized water, the ultrasonic disperse under 200W power
12 parts by weight hydrazine hydrates are added after 35min, sediment is centrifuged to obtain after continuing ultrasound 3h, ultrasound at a temperature of 60 DEG C, spends
It is put into after ion water washing to neutrality in baking oven, 4h is dried at a temperature of 120 DEG C, you can obtain modified graphene oxide.
According to following parts by weight dispensing:
13 parts of epoxy resin
Above-mentioned 3 parts of modified graphene oxide
1 part of methylnadic anhydride
Above-mentioned 16 parts of fluorine silicon epoxy-based polymerization thing
0.5 part of titante coupling agent
1 part of containing hydrogen silicone oil crosslinking agent.
Mixed in proportion by said components, heating stirring enters mixture to well mixed in vacuum degasing machine
Row deaeration, inclined heated plate is 5h;
Mixture after the deaeration is added in the hopper of double screw extruder, screw speed is set as 600r/min, passed through
Melting extrusion is crossed, water cooling pelletizing obtains pellet;Then, low temperature high-pressure drying is carried out, injection machine injection molding is used, prepares stone
Black alkene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material.
Embodiment two
By 45 parts by weight epoxide containing aliphatic ring acrylic monomers, 20 parts by weight of ethylene base silane monomers and 100 pbw acetones
Mixing, magnetic agitation is uniform, and 80 DEG C of temperature is heated under nitrogen protection, and the parts by weight of initiator 5 are added after temperature is constant, after
Continuous heating 5h, obtained product is rotated, removes after solvent and accessory substance, obtains product based polysiloxane containing epoxy.
The parts by weight of above-mentioned based polysiloxane containing epoxy 15,35 parts by weight are contained into fluorine based silicone, water, catalyst and 100 weights
The mixing of part acetone is measured, is stirred, is heated to 90 DEG C, 8h is reacted under a nitrogen, product revolving is removed into solvent and by-product
Thing, obtains fluorine silicon epoxy-based polymerization thing.
6 parts by weight graphene oxides are weighed to be added in the deionized water of 800 parts by weight, and it is anhydrous to add 500 parts by weight
Ethanol, the ultrasonic disperse 30min under 400W power adds 7 parts by weight KH-560 after disperseing, continue ultrasonic disperse 2h, after disperseing
Centrifuged with 5000r/min rotating speeds, obtain and ion-cleaning is spent after sediment 5 times.
By the sediment after above-mentioned washing in mass ratio 1:25 add in deionized water, the ultrasonic disperse under 250W power
24 parts by weight hydrazine hydrates are added after 45min, sediment is centrifuged to obtain after continuing ultrasound 5h, ultrasound at a temperature of 70 DEG C, spends
It is put into after ion water washing to neutrality in baking oven, 6h is dried at a temperature of 130 DEG C, you can obtain modified graphene oxide.
According to following parts by weight dispensing:
15 parts of epoxy resin
Above-mentioned 6 parts of modified graphene oxide
1.5 parts of methylnadic anhydride
Above-mentioned 18 parts of fluorine silicon epoxy-based polymerization thing
1 part of titante coupling agent
3 parts of containing hydrogen silicone oil crosslinking agent.
Mixed in proportion by said components, heating stirring enters mixture to well mixed in vacuum degasing machine
Row deaeration, inclined heated plate is 7h;
Mixture after the deaeration is added in the hopper of double screw extruder, screw speed is set as 800r/min, passed through
Melting extrusion is crossed, water cooling pelletizing obtains pellet;Then, low temperature high-pressure drying is carried out, injection machine injection molding is used, prepares stone
Black alkene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material.
Claims (1)
1. a kind of graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material preparation method, this method comprises the following steps:
(1)Prepare fluorine silicon epoxy-based polymerization thing
By 30-45 parts by weight epoxide containing aliphatic ring acrylic monomers, 10-20 parts by weight of ethylene base silane monomers and 50-100 weight
The mixing of part acetone is measured, magnetic agitation is uniform, and 50-80 DEG C of temperature is heated under nitrogen protection, add and trigger after temperature is constant
Agent 2-5 parts by weight, continue to heat 3-5h, obtained product are rotated, remove after solvent and accessory substance, obtain product containing ring
Epoxide polysiloxanes;
The above-mentioned 5-15 of based polysiloxane containing epoxy parts by weight, 10-35 parts by weight are contained into fluorine based silicone, water, catalyst and 50-
100 pbw acetones are mixed, and are stirred, are heated to 60-90 DEG C, 5-8h is reacted under a nitrogen, and product is rotated and removed
Solvent and accessory substance, obtain fluorine silicon epoxy-based polymerization thing;
(2)Prepare modified graphene oxide
Weigh 4-6 parts by weight graphene oxides to be added in the deionized water of 600-800 parts by weight, and add 400-500 weight
Part absolute ethyl alcohol, the ultrasonic disperse 20-30min under 300-400W power adds 6-7 parts by weight KH-560 after disperseing, and continues super
Sound disperses 1-2h, is centrifuged after disperseing with 4000-5000r/min rotating speeds, obtains and ion-cleaning is spent after sediment 3-5 times;
By the sediment after above-mentioned washing in mass ratio 1:(15-25)Add in deionized water, it is ultrasonic under 200-250W power
12-24 parts by weight hydrazine hydrates are added after scattered 35-45min, continue centrifugation point after ultrasound 3-5h, ultrasound at a temperature of 60-70 DEG C
From sediment is obtained, it is washed with deionized and is put into neutrality in baking oven, 4-6h is dried at a temperature of 120-130 DEG C, you can
To modified graphene oxide;
(3)According to following parts by weight dispensing:
13-15 parts of epoxy resin
Above-mentioned modified graphene oxide 3-6 parts
1-1.5 parts of methylnadic anhydride
Above-mentioned 16-18 parts of fluorine silicon epoxy-based polymerization thing
0.5-1 parts of titante coupling agent
1-3 parts of containing hydrogen silicone oil crosslinking agent;
(4)Mixed in proportion by said components, heating stirring is carried out mixture to well mixed in vacuum degasing machine
Deaeration, inclined heated plate is 5-7h;
Mixture after the deaeration is added in the hopper of double screw extruder, screw speed is set as 600-800r/
Min, by melting extrusion, water cooling pelletizing obtains pellet;Then, low temperature high-pressure drying is carried out, injection machine injection molding is used, prepared
Obtain graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710626504.8A CN107236306A (en) | 2017-07-27 | 2017-07-27 | A kind of graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material preparation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710626504.8A CN107236306A (en) | 2017-07-27 | 2017-07-27 | A kind of graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material preparation method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107236306A true CN107236306A (en) | 2017-10-10 |
Family
ID=59989406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710626504.8A Pending CN107236306A (en) | 2017-07-27 | 2017-07-27 | A kind of graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material preparation method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107236306A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108822496A (en) * | 2018-07-10 | 2018-11-16 | 济南开发区星火科学技术研究院 | A kind of graphene doped fluor-containing Si acrylate polymer packaging material preparation method |
CN110194883A (en) * | 2019-07-02 | 2019-09-03 | 陕西生益科技有限公司 | A kind of weatherability resin combination and its application |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105688743A (en) * | 2016-03-02 | 2016-06-22 | 济南华临化工有限公司 | Fluorine-silicon modified epoxy phosphate surfactant and preparation method thereof |
CN106449952A (en) * | 2016-10-09 | 2017-02-22 | 常州市鼎日环保科技有限公司 | Preparation method for LED packaging material |
CN106566193A (en) * | 2016-10-14 | 2017-04-19 | 中科院广州化学有限公司南雄材料生产基地 | Fluorine and silicon-containing epoxy polymer modified alicyclic epoxy LED composite packaging material and preparation method thereof |
CN106867261A (en) * | 2017-02-26 | 2017-06-20 | 苏州思创源博电子科技有限公司 | A kind of preparation method of compound fluorine silicon epoxy-based polymerization thing encapsulating material |
-
2017
- 2017-07-27 CN CN201710626504.8A patent/CN107236306A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105688743A (en) * | 2016-03-02 | 2016-06-22 | 济南华临化工有限公司 | Fluorine-silicon modified epoxy phosphate surfactant and preparation method thereof |
CN106449952A (en) * | 2016-10-09 | 2017-02-22 | 常州市鼎日环保科技有限公司 | Preparation method for LED packaging material |
CN106566193A (en) * | 2016-10-14 | 2017-04-19 | 中科院广州化学有限公司南雄材料生产基地 | Fluorine and silicon-containing epoxy polymer modified alicyclic epoxy LED composite packaging material and preparation method thereof |
CN106867261A (en) * | 2017-02-26 | 2017-06-20 | 苏州思创源博电子科技有限公司 | A kind of preparation method of compound fluorine silicon epoxy-based polymerization thing encapsulating material |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108822496A (en) * | 2018-07-10 | 2018-11-16 | 济南开发区星火科学技术研究院 | A kind of graphene doped fluor-containing Si acrylate polymer packaging material preparation method |
CN110194883A (en) * | 2019-07-02 | 2019-09-03 | 陕西生益科技有限公司 | A kind of weatherability resin combination and its application |
CN110194883B (en) * | 2019-07-02 | 2022-04-15 | 陕西生益科技有限公司 | Weather-resistant resin composition and application thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI804615B (en) | Thermosetting maleimide resin composition for semiconductor sealing and semiconductor device | |
KR930002803B1 (en) | Semiconductor device encapsulant | |
CN101186802B (en) | Epoxy resin composition for multi-chip package and multi-chip package using same | |
CN106449952B (en) | A kind of preparation method of LED encapsulation material | |
CN107429039A (en) | Epoxy molding compounds, preparation method and use | |
CN107236306A (en) | A kind of graphene doped fluor-containing silicon epoxy-based polymerization thing encapsulating material preparation method | |
CN107189359A (en) | A kind of preparation method of graphene composite organic encapsulating material | |
CN102031081A (en) | Liquid epoxy encapsulating material and preparation method thereof | |
CN107201003A (en) | A kind of preparation method of graphene boron nitride electronic package material | |
CN102337097A (en) | Preparation method of adhesive for powder-filled high-thermal-conductivity mica tape | |
CN101597436B (en) | Silicon tiny powder surface treating and modifying method, epoxy resin combination and preparation method thereof | |
CN106832784A (en) | A kind of preparation method of modified carborundum composite organic encapsulating material | |
CN107189360A (en) | A kind of preparation method of graphene conductive encapsulating material | |
JP7228597B2 (en) | Epoxy resin curing accelerator and epoxy resin composition | |
CN106832785A (en) | A kind of preparation method of modified carborundum boron nitride electronic package material | |
CN106280275B (en) | A kind of high dielectric-epoxy plastic packaging material and its preparation method and application | |
JP2004307545A (en) | Epoxy resin composition and sealed semiconductor device | |
CN103289409A (en) | A preparation method for a silicone resin composite material having a good flexural property | |
CN106832948A (en) | A kind of boron nitride doped fluor-containing silicon epoxy-based polymerization thing encapsulating material preparation method | |
JP4961635B2 (en) | Epoxy resin composition and semiconductor device | |
CN106867261A (en) | A kind of preparation method of compound fluorine silicon epoxy-based polymerization thing encapsulating material | |
CN107383784A (en) | A kind of preparation method of graphene composite organic encapsulating material | |
CN112795141A (en) | High-thermal-conductivity high-shielding epoxy plastic packaging material and preparation method thereof | |
JP4691886B2 (en) | Epoxy resin composition and semiconductor device | |
JP7127251B2 (en) | Sealing resin composition and structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20171010 |