CN107229909B - electronic device, ultrasonic fingerprint identification device and manufacturing method thereof - Google Patents
electronic device, ultrasonic fingerprint identification device and manufacturing method thereof Download PDFInfo
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- CN107229909B CN107229909B CN201710352351.2A CN201710352351A CN107229909B CN 107229909 B CN107229909 B CN 107229909B CN 201710352351 A CN201710352351 A CN 201710352351A CN 107229909 B CN107229909 B CN 107229909B
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- G—PHYSICS
- G07—CHECKING-DEVICES
- G07C—TIME OR ATTENDANCE REGISTERS; REGISTERING OR INDICATING THE WORKING OF MACHINES; GENERATING RANDOM NUMBERS; VOTING OR LOTTERY APPARATUS; ARRANGEMENTS, SYSTEMS OR APPARATUS FOR CHECKING NOT PROVIDED FOR ELSEWHERE
- G07C9/00—Individual registration on entry or exit
- G07C9/00174—Electronically operated locks; Circuits therefor; Nonmechanical keys therefor, e.g. passive or active electrical keys or other data carriers without mechanical keys
- G07C9/00563—Electronically operated locks; Circuits therefor; Nonmechanical keys therefor, e.g. passive or active electrical keys or other data carriers without mechanical keys using personal physical data of the operator, e.g. finger prints, retinal images, voicepatterns
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
Abstract
the embodiment of the application provides electronic equipment, an ultrasonic fingerprint identification device and a manufacturing method thereof, wherein the method comprises the following steps: forming a first piezoelectric layer having a specific piezoelectric strain constant on top of a base layer; forming a first planar electrode on top of the first piezoelectric layer; forming a second piezoelectric layer having a specific piezoelectric voltage constant on top of the first planar electrode; forming a second planar electrode on top of the second piezoelectric layer; forming a resonant cavity on the substrate layer and forming a third planar electrode in the resonant cavity to form a first device; the first planar electrode, the second piezoelectric layer and the second planar electrode are used for realizing ultrasonic wave emission; the third plane electrode, the first piezoelectric layer, the second piezoelectric layer and the second plane electrode are used for realizing ultrasonic wave receiving; and integrating the first device with a matched semiconductor device to form the ultrasonic fingerprint identification device. The embodiment of the application can improve the loop efficiency and the identification sensitivity of the ultrasonic fingerprint identification device.
Description
Technical Field
the present application relates to the field of ultrasonic fingerprint identification technologies, and in particular, to an electronic device, an ultrasonic fingerprint identification apparatus, and a manufacturing method thereof.
background
In the ultrasonic fingerprint identification technology, the main function of the ultrasonic fingerprint identification device is to convert an excitation signal into ultrasonic waves and directionally transmit the ultrasonic waves in a direction vertical to a fingerprint, and simultaneously receive the ultrasonic waves reflected by the fingerprint and convert the ultrasonic waves into corresponding electric signals. Therefore, the design of the ultrasonic fingerprint recognition apparatus is very critical.
The preparation of piezoelectric materials is also a key point in the design of ultrasonic fingerprint identification devices. The piezoelectric material currently selected is generally AlN, lead zirconate titanate (PZT) piezoelectric ceramics, or organic piezoelectric material polyvinyl fluoride (PVF). In contrast, PZT has good transmission efficiency (i.e., has good piezoelectric effect), but the reception efficiency (i.e., has good inverse piezoelectric effect) of PZT is small. Materials such as AlN and PVF have better receiving efficiency, but the transmitting efficiency is not as good as that of PZT.
in the manufacturing technology of the existing ultrasonic fingerprint identification device, one piezoelectric material is generally selected to complete the design of the ultrasonic fingerprint identification device according to the actual application scene. For example, for some applications where the transmitting and receiving devices are separate, PZT may be selected as the transmitting sensor, and AlN or PVF may be selected as the receiving sensor.
However, in the ultrasonic fingerprint recognition technology, the ultrasonic fingerprint recognition device needs to have both the transmitting and receiving functions. Therefore, the conventional scheme of the ultrasonic fingerprint recognition device using a single piezoelectric material tends to lower the loop efficiency (the loop efficiency is equal to the transmission efficiency × the reception efficiency), which limits the recognition sensitivity of the ultrasonic fingerprint recognition device.
disclosure of Invention
an object of the embodiments of the present application is to provide an electronic device, an ultrasonic fingerprint identification device and a manufacturing method thereof, so as to improve the loop efficiency of the ultrasonic fingerprint identification device, thereby improving the identification sensitivity of the ultrasonic fingerprint identification device.
in order to achieve the above object, in one aspect, an embodiment of the present application provides a method for manufacturing an ultrasonic fingerprint identification device, including:
forming a first piezoelectric layer having a specific piezoelectric strain constant on top of a base layer;
Forming a first planar electrode on top of the first piezoelectric layer;
forming a second piezoelectric layer having a specific piezoelectric voltage constant on top of the first planar electrode;
Forming a second planar electrode on top of the second piezoelectric layer;
forming a resonant cavity on the substrate layer and forming a third planar electrode within the resonant cavity to form a first device; the first planar electrode, the second piezoelectric layer and the second planar electrode are used for realizing ultrasonic wave emission; the third plane electrode, the first piezoelectric layer, the second piezoelectric layer and the second plane electrode are used for realizing ultrasonic wave receiving;
Integrating the first device with a mating semiconductor device to form the ultrasonic fingerprinting device preferably, the process of forming the first piezoelectric layer on top of the base layer comprises a deposition process.
Preferably, the forming of the first planar electrode on top of the first piezoelectric layer includes:
patterning the first piezoelectric layer to form a first contact trench;
A first planar electrode is formed on top of the first piezoelectric layer by a deposition process and a first conductive feature is formed within the first contact trench.
preferably, the process of forming the second piezoelectric layer on top of the base layer comprises a deposition process.
preferably, the process of forming the second planar electrode on top of the second piezoelectric layer comprises a deposition process.
Preferably, the forming a resonant cavity on the substrate layer and forming a third planar electrode in the resonant cavity includes:
Vertically turning over the structure obtained after the second planar electrode is formed;
Patterning the substrate layer to form a resonant cavity;
Forming a conductive layer within the resonant cavity;
patterning the conductive layer to form a third planar electrode and a second conductive member insulated and isolated from each other; one end of the second conductive component is electrically connected with the first conductive component, and the other end of the second conductive component is used for being electrically connected with an emitting electrode of the semiconductor device; the third plane electrode is used for being electrically connected with the receiving electrode of the semiconductor device.
Preferably, the integrated process comprises a wafer bonding process.
Preferably, the method further comprises the following steps:
and forming a passivation protective layer on the top of the second planar electrode.
preferably, the patterning is achieved by an etching process.
On the other hand, the embodiment of the application also provides the ultrasonic fingerprint identification device manufactured by the method.
in another aspect, an embodiment of the present application further provides an electronic device configured with the above ultrasonic fingerprint identification device.
preferably, the electronic device comprises a mobile terminal.
In yet another aspect, an embodiment of the present application further provides a computer storage medium, on which a computer program is stored, where the computer program, when executed by a processor, implements the following steps:
Forming a first piezoelectric layer having a specific piezoelectric strain constant on top of a base layer;
Forming a first planar electrode on top of the first piezoelectric layer;
Forming a second piezoelectric layer having a specific piezoelectric voltage constant on top of the first planar electrode;
forming a second planar electrode on top of the second piezoelectric layer;
Forming a resonant cavity on the substrate layer and forming a third planar electrode within the resonant cavity to form a first device; the first planar electrode, the second piezoelectric layer and the second planar electrode are used for realizing ultrasonic wave emission; the third plane electrode, the first piezoelectric layer, the second piezoelectric layer and the second plane electrode are used for realizing ultrasonic wave receiving;
and integrating the first device with a matched semiconductor device to form the ultrasonic fingerprint identification device.
The ultrasonic fingerprint identification device comprises three planar electrodes and two piezoelectric layers which are arranged between the planar electrodes at intervals; the first planar electrode, the second piezoelectric layer and the second planar electrode are used for realizing ultrasonic wave emission; the third plane electrode, the first piezoelectric layer, the second piezoelectric layer and the second plane electrode are used for realizing ultrasonic wave receiving; the second piezoelectric layer has a specific piezoelectric strain constant, so that the ultrasonic wave emission efficiency can be improved when ultrasonic wave emission is realized; correspondingly, because first piezoelectric layer has specific piezoelectric voltage constant, when realizing ultrasonic wave receiving, can improve ultrasonic wave receiving efficiency to make the ultrasonic fingerprint identification device of this application embodiment can have higher return circuit efficiency, and then be favorable to improving ultrasonic fingerprint identification device's sensitivity.
Drawings
in order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without any creative effort. In the drawings:
FIG. 1 is a flow chart illustrating a method for manufacturing an ultrasonic fingerprint identification device according to an embodiment of the present application;
FIG. 2 is a schematic view of a substrate according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram illustrating a structure of a first piezoelectric layer formed on top of a base layer according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of a first piezoelectric layer after patterning according to an embodiment of the present application;
Fig. 5 is a schematic structural diagram illustrating a first planar electrode formed on top of a patterned first piezoelectric layer according to an embodiment of the present application;
FIG. 6 is a schematic structural diagram illustrating a second piezoelectric layer formed on top of a first planar electrode according to an embodiment of the present application;
Fig. 7 is a schematic structural diagram of an embodiment of the present application after forming a second planar electrode on top of a second piezoelectric layer;
FIG. 8 is a schematic structural diagram illustrating a passivation layer formed on top of a second planar electrode according to an embodiment of the present disclosure;
FIG. 9 is a schematic view of the structure shown in FIG. 8 after it has been vertically flipped and patterned;
FIG. 10 is a schematic diagram of a structure formed after deposition of the structure shown in FIG. 9 according to an embodiment of the present application;
FIG. 11 is a schematic diagram illustrating a structure of the structure shown in FIG. 10 after patterning a conductive layer according to an embodiment of the present disclosure;
FIG. 12 is a schematic structural diagram of an ultrasonic fingerprint recognition apparatus formed after vertically flipping the structure shown in FIG. 11 and integrating with a mating semiconductor device according to an embodiment of the present application;
fig. 13 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. For example, in the following description, forming the second component over the first component may include embodiments in which the first and second components are formed in direct contact, embodiments in which the first and second components are formed in non-direct contact (i.e., additional components may be included between the first and second components), and so on.
Also, for ease of description, some embodiments of the present application may use spatially relative terms such as "above …," "below …," "top," "below," etc., to describe the relationship of one element or component to another (or other) element or component as illustrated in the various figures of the embodiments. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or components described as "below" or "beneath" other elements or components would then be oriented "above" or "over" the other elements or components.
furthermore, as used in the following examples of the present application, the terms "a," "an," "the," "said," and the like, as if used in the singular, may also include the plural, unless the context clearly dictates otherwise. It should also be noted that the terms "comprises," "comprising," or any other variation thereof, as used in the following embodiments of the present application, are intended to cover a non-exclusive inclusion, which is intended to specify the presence of stated features, integers, steps, operations, elements, components, etc., but does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, etc.
although the operational flows described below include multiple operations occurring in a particular order, it should be appreciated that each operational flow is described sequentially as multiple discrete operations in a manner that is helpful in understanding the embodiments described herein. However, the order of description should not be construed as to imply that these operations are necessarily order dependent. In particular, the operations may not necessarily be performed in the order presented, for example, the processes may include more or fewer operations.
referring to fig. 1, a method for manufacturing an ultrasonic fingerprint recognition apparatus according to an embodiment of the present application may include the steps of:
And S101, forming a first piezoelectric layer with a specific piezoelectric strain constant on the top of the base layer.
in some embodiments of the present application, as shown in fig. 2, the base layer 101 may be used as a substrate for manufacturing an ultrasonic fingerprint recognition device, and may also function as a bottom support.
In some embodiments of the present application, the material of the base layer 101 may be, for example, monocrystalline silicon, polycrystalline silicon, or an elemental semiconductor material of silicon or germanium with an amorphous structure. In other embodiments of the present invention, the material of the base layer 101 may also be a compound semiconductor material such as silicon carbide, gallium arsenide, gallium phosphide, indium arsenide, and the like, and in other embodiments of the present invention, the material of the base layer 101 may also be an alloy semiconductor material such as SiGe or GaAsP.
in some embodiments of the present application, as shown in fig. 3, the first piezoelectric layer 102 having a specific piezoelectric strain constant may be formed on top of the base layer 101 by a deposition process, which may be, for example, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), electroplating, evaporation (e.g., molecular beam epitaxy, etc.), spin coating, or the like, as desired. In addition, the deposition or deposition process mentioned below can also refer to the description of this section to avoid redundancy.
in some embodiments, the specific piezoelectric constant is a piezoelectric constant of the first piezoelectric layer 102 that can be larger (specifically, the piezoelectric constant can be not lower than a specified threshold value) to improve the transmission efficiency of the ultrasonic fingerprint identification apparatus. In view of this, in some exemplary embodiments of the present application, the first piezoelectric layer 102 may be selected from a piezoelectric material having a large piezoelectric strain constant, such as PZT.
And S102, forming a first plane electrode on the top of the first piezoelectric layer.
in some embodiments of the present application, the forming of the first planar electrode on top of the first piezoelectric layer may include:
First, as shown in fig. 4, the first piezoelectric layer 102 is patterned to form first contact trenches 103.
next, as shown in fig. 5, a first planar electrode 104 may be formed on top of the first piezoelectric layer 102 by a process such as deposition, and a first conductive member 104' may be formed in the first contact trench 103.
In some embodiments of the present application, the patterning may be performed by an etching process, for example. In some exemplary embodiments of the present application, the etching process may be any suitable etching process such as wet etching or dry etching, for example, photolithography, X-ray etching, electron beam etching, or ion beam etching. In addition, the following patterning or patterning process may also refer to the description of this section to avoid redundancy.
In some embodiments, the material of the first planar electrode 104 may be a conductive material such as a metal, a metal silicide, a metal nitride, a metal oxide, or conductive carbon. In some exemplary embodiments of the present application, the material of the first planar electrode 104 may be Al, Cu, Ag, Au, Ni, Co, TiAl, TiN, TaN, or the like.
And S103, forming a second piezoelectric layer with a specific piezoelectric voltage constant on the top of the first planar electrode.
In some embodiments of the present application, as shown in fig. 6, the second piezoelectric layer 102' may be formed on top of the first planar electrode 104 by a deposition process.
in some embodiments of the present application, the specific piezoelectric constant is that the piezoelectric constant of the second piezoelectric layer 102' may be larger (specifically, the piezoelectric constant may not be lower than a set threshold value), so as to improve the receiving efficiency of the ultrasonic fingerprint identification apparatus. In view of this, in some exemplary embodiments of the present application, the second piezoelectric layer 102' may be selected from a piezoelectric material having a large piezoelectric voltage constant, such as AlN.
And S104, forming a second plane electrode on the top of the second piezoelectric layer.
In some embodiments of the present application, as shown in fig. 7, the second planar electrode 105 can be formed on top of the second piezoelectric layer 102' by a deposition process.
in some embodiments of the present application, the material of the second planar electrode 105 may be a conductive material such as a metal, a metal silicide, a metal nitride, a metal oxide, or conductive carbon. In some exemplary embodiments of the present application, the material of the second planar electrode 105 may be Al, Cu, Ag, Au, Ni, Co, TiAl, TiN, TaN, or the like.
In other embodiments of the present application, as shown in fig. 8, a passivation protection layer 106 may be further formed on top of the second planar electrode 105 by a deposition process or the like. In some embodiments of the present application, the passivation protection layer 106 may be made of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, low-k dielectric material, other suitable materials, or a combination thereof.
s105, forming a resonant cavity on the substrate layer, and forming a third plane electrode in the resonant cavity to form a first device; the first planar electrode, the second piezoelectric layer and the second planar electrode are matched with each other to realize ultrasonic emission; the third plane electrode, the first piezoelectric layer, the second piezoelectric layer and the second plane electrode are matched with each other to realize ultrasonic wave receiving.
In some embodiments of the present application, the receiving of the ultrasonic waves refers to receiving reflected waves of the emitted ultrasonic waves reflected back when encountering an obstacle (e.g., a finger).
In some embodiments of the present application, forming a resonant cavity on the substrate layer and forming a third planar electrode in the resonant cavity may include:
Firstly, the structure obtained after the second planar electrode is formed is vertically turned over, so that the substrate layer can be conveniently patterned subsequently.
next, as shown in fig. 9, the base layer 101 is patterned to form a resonant cavity 107.
Next, as shown in fig. 10, a conductive layer 108 is formed in the resonant cavity 107; in some embodiments of the present application, the conductive layer 108 may be formed within the base layer 101 by a deposition process.
Then, as shown in fig. 11, the conductive layer 108 is patterned to form a third planar electrode 109 and a second conductive member 110 insulated and isolated from each other; one end of the second conductive part 110 is electrically connected with the first conductive part 104', and the other end of the second conductive part 110 is used for electrically connecting with an emitting electrode of the semiconductor device; the third planar electrode 109 is used for electrically connecting with the receiving electrode of the semiconductor device.
to facilitate an understanding of the principles of the examples of this application and their effects, the following further explains:
For ultrasonic transmission, let ETX be the transmission efficiency of the ultrasonic element, VTX be the drive voltage amplitude, and UTX be the ultrasonic amplitude generated; then there are: ETX ═ UTX/VTX.
In the case of ignoring the attenuation factor of the ultrasound path (since this attenuation factor is typically a constant value for different scenarios), for the returned ultrasound reception, assume that ERX is the reception efficiency of the ultrasound element and VRX is the received signal amplitude; then there are: ERX ═ VRX/UTX.
the loop efficiency ELOOP of an ultrasonic element may be defined as: ELOOP ═ VRX/VTX ═ ETX × ERX.
Taking PZT and AlN as ultrasonic elements of a single piezoelectric material, respectively, for example, the transmission efficiency and the reception efficiency correspond to:
E＝5*E，E＝E；
E＝E，E＝10*E；
Wherein ETX _ NORM is a transmission efficiency normalization value, and ERX _ NORM is a reception efficiency normalization value.
since the normalized loop efficiency is ELOOP _ NORM ═ ETX _ NORM × ERX _ NORM, then:
If an ultrasonic element with PZT as the single piezoelectric material is used, the loop efficiency is 5 times the normalized loop efficiency: ELOOP _ PZT ═ ETX _ PZT ═ ERX _ PZT ═ 5 _ ELOOP _ NORM;
If an ultrasonic element using AlN as a single piezoelectric material is used, the loop efficiency is 10 times the normalized loop efficiency: ELOOP _ AlN ═ ETX _ AlN ═ ERX _ AlN ═ 10 ═ ELOOP _ NORM;
in the embodiment of the present application, the first planar electrode 104, the second piezoelectric layer 102' and the second planar electrode 105 are used to realize ultrasonic emission. That is, during transmission, the first planar electrode 104 may be switched to a DC level, the second planar electrode 105 is switched to an ac driving signal, the second piezoelectric layer 102' serves as a transmission layer, the ac driving signal is converted into an ultrasonic wave by using a piezoelectric effect, and the third planar electrode 109 and the first piezoelectric layer 102 do not participate in implementing ultrasonic transmission, specifically, the third planar electrode 109 may be selectively suspended, or the third planar electrode 109 may be switched to a level signal (for example, a DC level) that is the same as that switched to the first planar electrode 104. The ultrasonic wave transmission efficiency of the ultrasonic wave element at this time is:
E＝E＝5*E；
In addition, the third planar electrode 109, the first piezoelectric layer 102, the second piezoelectric layer 102' and the second planar electrode 105 are used for realizing ultrasonic wave reception by using the embodiment of the present application. That is, during receiving, the first piezoelectric layer 102 and the second piezoelectric layer 102 'both convert the reflected ultrasonic waves into voltage signals by using the inverse piezoelectric effect, the generated voltage signals are superimposed in phase, at this time, the first piezoelectric layer 102 and the second piezoelectric layer 102' together serve as a receiving layer for converting the reflected ultrasonic waves into voltage signals, and the third planar electrode 109 and the second planar electrode 105 are used for collecting the voltage signals output by the receiving layer. In the exemplary embodiment of the present application, for example, the second planar electrode 105 may be switched to a DC level, and the third planar electrode 109 may be connected to a receiving electrode (i.e., a receiving electrode of a semiconductor device that is mated with the first device); the first planar electrode 104 does not participate in the realization of the ultrasonic wave reception, and specifically, the ultrasonic wave reception can be realized by selectively suspending the first planar electrode 104. Then the ultrasonic wave receiving efficiency of the ultrasonic wave element at this time is:
E＝E+E＝11*E；
in this case, the normalized loop efficiency of the ultrasonic fingerprint identification apparatus of the embodiment of the present application is:
E＝E*E＝55*E；
Therefore, the loop efficiency of the ultrasonic fingerprint identification device is far greater than the loop efficiency of an ultrasonic element made of a single material, so that the identification sensitivity of the ultrasonic fingerprint identification device is improved, and the ultrasonic fingerprint identification device has stronger medium penetrating power and better fingerprint imaging capacity.
of course, in some embodiments of the present application, the first planar electrode 104 located between the second piezoelectric layer 102' and the first piezoelectric layer 102 can also be used as a transition layer to perform the functions of stress transition and combined ion diffusion, thereby being beneficial to ensure the integrity of the respective characteristics of the two piezoelectric layers. To achieve this, the lattice size of the material used for the first planar electrode 104 should be between the lattice size of the material used for the second piezoelectric layer 102' and the lattice size of the piezoelectric material used for the first piezoelectric layer 102.
and S106, integrating the first device with a matched semiconductor device to form the ultrasonic fingerprint identification device.
in some embodiments of the present application, the first device 10 may be integrated with a mating semiconductor device 20 using any suitable integration process, such as wafer bonding, to form an ultrasonic fingerprinting apparatus, as shown in fig. 12. In some exemplary embodiments of the present application, the semiconductor device may be, for example, a CMOS chip or the like for signal processing.
in some embodiments of the present application, the ultrasonic fingerprint recognition device can be configured in any suitable electronic device to achieve the purpose of identity recognition through fingerprint recognition.
In some embodiments of the present application, a typical electronic device is a smart phone (a type of mobile terminal), such as that shown in fig. 13. In the figure, the smart phone 200 is provided with the ultrasonic fingerprint identification device 201 of the embodiment of the present application, when a user locates a finger on the ultrasonic fingerprint identification device 201 (the finger may be in direct contact with the ultrasonic fingerprint identification device 201, or the finger may be close to the upper side of the ultrasonic fingerprint identification device 201 but not in contact with the ultrasonic fingerprint identification device), the ultrasonic wave emitted by the ultrasonic fingerprint identification device 201 is reflected after encountering the finger, and the reflected ultrasonic wave carries the fingerprint information of the finger because the fingerprint has a convex peak and a concave peak; the reflected ultrasonic waves act on the piezoelectric sensing component of the ultrasonic fingerprint identification device 201 in turn, so that corresponding electrical signals carrying fingerprint information are generated, the electrical signals carrying fingerprint information are transmitted to the processing device 202 in the smart phone 200 (the processing device 202 may be specific processing software, hardware or a combination of software and hardware), after acquiring the acquired fingerprint information, the processing device 202 compares the acquired fingerprint information with specific fingerprint information stored in the smart phone 200 in advance, and if the acquired fingerprint information is consistent with the specific fingerprint information, the identification is passed. Otherwise, the identity recognition fails.
In some exemplary embodiments of the present application, the electronic device may also be a personal computer, a laptop computer, a cellular phone, a camera phone, a Personal Digital Assistant (PDA), a media player, a navigation device, a game console, a tablet computer, or a wearable device, among others. In other exemplary embodiments of the present application, the electronic device may also be a security access control electronic system, a car keyless entry electronic system, or a car keyless start electronic system, etc.
the present application may also provide a computer storage medium having a computer program stored thereon, the computer program when executed by a processor implementing the steps of:
Forming a first piezoelectric layer having a specific piezoelectric strain constant on top of a base layer;
Forming a first planar electrode on top of the first piezoelectric layer;
Forming a second piezoelectric layer having a specific piezoelectric voltage constant on top of the first planar electrode;
Forming a second planar electrode on top of the second piezoelectric layer;
Forming a resonant cavity on the substrate layer and forming a third planar electrode within the resonant cavity to form a first device; the first planar electrode, the second piezoelectric layer and the second planar electrode are used for realizing ultrasonic wave emission; the third plane electrode, the first piezoelectric layer, the second piezoelectric layer and the second plane electrode are used for realizing ultrasonic wave receiving;
And integrating the first device with a matched semiconductor device to form the ultrasonic fingerprint identification device.
as will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, or computer program product. The present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.
The present invention has been described with reference to methods and apparatus according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
in a typical configuration, a computing device includes one or more processors (CPUs), input/output interfaces, network interfaces, and memory.
The memory may include forms of volatile memory in a computer readable medium, Random Access Memory (RAM) and/or non-volatile memory, such as Read Only Memory (ROM) or flash memory (flash RAM). Memory is an example of a computer-readable medium.
Computer-readable media, including both non-transitory and non-transitory, removable and non-removable media, may implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), Read Only Memory (ROM), Electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), Digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information that can be accessed by a computing device. As defined herein, a computer readable medium does not include a transitory computer readable medium such as a modulated data signal and a carrier wave.
The application may be described in the general context of computer-executable instructions, such as program modules, being executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform particular tasks or implement particular abstract data types. The application may also be practiced in distributed computing environments where tasks are performed by remote processing devices that are linked through a communications network. In a distributed computing environment, program modules may be located in both local and remote computer storage media including memory storage devices.
the embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, as for the apparatus embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (13)
1. a method of manufacturing an ultrasonic fingerprint identification device, comprising:
Forming a first piezoelectric layer having a specific piezoelectric strain constant on top of a base layer;
Forming a first planar electrode on top of the first piezoelectric layer;
forming a second piezoelectric layer having a specific piezoelectric voltage constant on top of the first planar electrode;
Forming a second planar electrode on top of the second piezoelectric layer;
Forming a resonant cavity on the substrate layer and forming a third planar electrode within the resonant cavity to form a first device; the first planar electrode, the second piezoelectric layer and the second planar electrode are used for realizing ultrasonic wave emission; the third plane electrode, the first piezoelectric layer, the second piezoelectric layer and the second plane electrode are used for realizing ultrasonic wave receiving;
and integrating the first device with a matched semiconductor device to form the ultrasonic fingerprint identification device.
2. the method of manufacturing of claim 1, wherein the process of forming the first piezoelectric layer on top of the base layer comprises a deposition process.
3. the method of manufacturing of claim 1, wherein forming a first planar electrode on top of the first piezoelectric layer comprises:
Patterning the first piezoelectric layer to form a first contact trench;
a first planar electrode is formed on top of the first piezoelectric layer by a deposition process and a first conductive feature is formed within the first contact trench.
4. The method of manufacturing of claim 1, wherein the process of forming a second piezoelectric layer on top of the base layer comprises a deposition process.
5. the method of manufacturing of claim 1, wherein the process of forming a second planar electrode on top of the second piezoelectric layer comprises a deposition process.
6. the method of manufacturing according to claim 3, wherein the forming a resonant cavity on the substrate layer and forming a third planar electrode within the resonant cavity comprises:
Vertically turning over the structure obtained after the second planar electrode is formed;
patterning the substrate layer to form a resonant cavity;
Forming a conductive layer within the resonant cavity;
patterning the conductive layer to form a third planar electrode and a second conductive member insulated and isolated from each other; one end of the second conductive component is electrically connected with the first conductive component, and the other end of the second conductive component is used for being electrically connected with an emitting electrode of the semiconductor device; the third plane electrode is used for being electrically connected with the receiving electrode of the semiconductor device.
7. The method of manufacturing of claim 1, wherein the integrated process comprises a wafer bonding process.
8. The method of manufacturing of claim 1, further comprising:
And forming a passivation protective layer on the top of the second planar electrode.
9. A method of manufacturing as claimed in claim 3 or 6, characterized in that the patterning is effected by means of an etching process.
10. An ultrasonic fingerprint recognition device manufactured by the method of any one of claims 1 to 9.
11. An electronic device equipped with the ultrasonic fingerprint recognition device according to claim 10.
12. The electronic device of claim 11, comprising a mobile terminal.
13. A computer storage medium having a computer program stored thereon, the computer program, when executed by a processor, performing the steps of:
forming a first piezoelectric layer having a specific piezoelectric strain constant on top of a base layer;
Forming a first planar electrode on top of the first piezoelectric layer;
Forming a second piezoelectric layer having a specific piezoelectric voltage constant on top of the first planar electrode;
forming a second planar electrode on top of the second piezoelectric layer;
Forming a resonant cavity on the substrate layer and forming a third planar electrode within the resonant cavity to form a first device; the first planar electrode, the second piezoelectric layer and the second planar electrode are used for realizing ultrasonic wave emission; the third plane electrode, the first piezoelectric layer, the second piezoelectric layer and the second plane electrode are used for realizing ultrasonic wave receiving;
And integrating the first device with a matched semiconductor device to form the ultrasonic fingerprint identification device.
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| CN111523436B (en) * | 2018-05-18 | 2024-02-09 | 上海思立微电子科技有限公司 | Ultrasonic fingerprint identification pixel structure, chip and electronic equipment |
| CN109492623B (en) * | 2018-12-28 | 2021-03-16 | 武汉华星光电技术有限公司 | Ultrasonic fingerprint identification module and display panel |
| CN109816733B (en) * | 2019-01-14 | 2023-08-18 | 京东方科技集团股份有限公司 | Camera parameter initialization method and device, camera parameter calibration method and device and image acquisition system |
| CN109614963B (en) * | 2019-01-28 | 2023-08-29 | 京东方科技集团股份有限公司 | Fingerprint identification structure and display device |
| CN111950326B (en) * | 2019-05-16 | 2023-10-24 | 京东方科技集团股份有限公司 | Ultrasonic sensor and display panel |
| CN112835052B (en) * | 2019-11-25 | 2023-09-05 | 京东方科技集团股份有限公司 | Ultrasonic sensing module, ultrasonic sensing device, control method and display equipment |
| CN112786775B (en) * | 2021-01-04 | 2022-11-11 | 国网内蒙古东部电力有限公司电力科学研究院 | Piezoelectric nano array sensor for passive self-power supply and preparation method thereof |
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