CN107222694A - A kind of single photon cmos image sensor image element circuit of low pixel size - Google Patents
A kind of single photon cmos image sensor image element circuit of low pixel size Download PDFInfo
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- CN107222694A CN107222694A CN201710271866.XA CN201710271866A CN107222694A CN 107222694 A CN107222694 A CN 107222694A CN 201710271866 A CN201710271866 A CN 201710271866A CN 107222694 A CN107222694 A CN 107222694A
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- 238000010791 quenching Methods 0.000 claims abstract description 22
- 230000000171 quenching effect Effects 0.000 claims abstract description 22
- 238000004088 simulation Methods 0.000 claims abstract description 18
- 230000003071 parasitic effect Effects 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- 230000003750 conditioning effect Effects 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 3
- 238000013461 design Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 3
- 239000003574 free electron Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 238000002292 fluorescence lifetime imaging microscopy Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001712 DNA sequencing Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000000684 flow cytometry Methods 0.000 description 1
- 238000001917 fluorescence detection Methods 0.000 description 1
- 238000000799 fluorescence microscopy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Abstract
The invention provides a kind of single photon cmos image sensor image element circuit of low pixel size, comprising quenching circuit, simulation counting circuit and reading circuit, quenching circuit on one side connection simulation counting circuit, simulation counting circuit one end connection reading circuit.Quenching circuit contains a single-photon avalanche diode, and the work of quenching circuit control single-photon avalanche diode is with closing and producing pulse.The single photon cmos image sensor image element circuit of the present invention, only uses 5 nmos pass transistors and 1 single-photon avalanche diode, and structure is simplified, it is adaptable to high-resolution single photon cmos image sensor.
Description
[technical field]
The present invention relates to the cmos image sensor image element circuit and system framework of integrated circuit, it is adaptable to low pixel size
High-resolution single photon cmos image sensor.
[background technology]
In the last few years, people were continually studied all the more in life science using the characteristic of fluorescence.Except environment
Beyond the application such as detection, clinical medicine, DNA sequencing, fluorescence is also used as the classification of cellular identification, Flow Cytometry, comes
Disclose position and the motion of cell interior material.The fluorescence microscopy of stable state is usually applied to inside cell analysis, however, it
It is very sensitive to some factors based on the light intensity such as change of excitation source intensity, photobleaching etc..And this technology is difficult
Distinguish the fluorophor with identical excitation and emission spectra.Fluorescence Lifetime Imaging Microscopy generates the fluorophor life-span
There is provided the information for another dimension for checking fluorophor for space domain imaging.And fluorescence lifetime is for the ring residing for fluorescence
Border is very sensitive, independently of the factors of influence fluorescence intensity.
Conventional photodiode cmos image sensor generally goes through the intensity of sensing light, produces corresponding photoelectric current, so
A magnitude of voltage is produced to photoelectric current integration afterwards, the light intensity for obtaining this pixel is then handled the magnitude of voltage progress.But one
Aspect, conventional photodiode cmos image sensor is difficult that can reach the sensitivity of single photon detection, and to rear end
The signal to noise ratio of required process circuit has high requirement.Still further aspect, conventional photodiode cmos image sensor pair
The time of integration of photoelectric current is relatively long, is a relatively slow processing procedure.Single photon cmos image sensor is due to it
Itself susceptibility high to photon and extremely short response time, it is well suited for Fluorescence Lifetime Imaging Microscopy.Compared to Pang
Big fluorescence lifetime imaging experiment porch, such a sensor chip is cheap, and integrated level is very high, and being by a chip can be with
Obtain the data that can be just accessed by huge and expensive experiment porch.
Time-domain shutter (time-gated) technology be it is a kind of can quickly detect the technology of fluorescence lifetime in real time, with biography
The time domain correlated single photon of system counts (TCSPC) detection technique and compared, and this kind of detection technique is lower to the hardware requirement of system, leads to
The information of some pixel fluorescence lifetime can be obtained by crossing two frames or multiframe.And can be reached very by such a technological means
High pixel resolution, traditional image element circuit size based on TCSPC technologies is general more than 50 microns, and when being based on
Between the image element circuit of domain shutter (time-gated) technology can reach 20 microns.
As shown in figure 1, by counting light intensity and below equation between two pulse widths：
We can draw the fluorescence life τ of certain pixel, and S1 and S2 are the light intensity that measurement is obtained, respectively with window
Total number of light photons is directly proportional, and Δ t is measurement pulse width.
In the experiment porch shown in Fig. 2, single photon cmos image sensor is used to detect fluorescence lifetime.Whole experiment
Carried out under conditions of dark is unglazed, a branch of peak power of external emission is come in the picosecond pulse laser of hundreds of milliwatt magnitudes first
Sample is excited to produce fluorescence, then single photon cmos image sensor, which is placed at light hole, carrys out fluorescence intensity, finally leads to
Number of photons resulting in two windows is crossed to calculate fluorescence lifetime.
Document (Lucio Pancheri, Nicola Massari, David Stoppa, " SPAD Image Sensor
With Analog Counting Pixel for Time-Resolved Fluorescence Detection”,IEEE
TRANSACTIONS ON ELECTRON DEVICES, VOL.60, NO.10, OCTOBER 2013) illustrate a 32x32 picture
The single photon cmos image sensor detected for fluorescence lifetime of element, the sensor uses 0.35 μm of CMOS technology system of high pressure
Make, Pixel Dimensions are reduced using the method for simulation counting to greatest extent.All pixels circuit is by 12 nmos pass transistors and 1
Individual single-photon avalanche diode is constituted, the fill factor with 25 μm of Pixel Dimensions and 20.8%.
[content of the invention]
In order to provide a kind of single photon cmos image sensor image element circuit of more excellent low pixel size, the present invention is used
Technical scheme be：
A kind of single photon cmos image sensor image element circuit of low pixel size, comprising quenching circuit, simulation counts electricity
Road and reading circuit, quenching circuit on one side connection simulation counting circuit, simulation counting circuit one end connection reading circuit.
Further, the quenching circuit contains a single-photon avalanche diode and quenching transistor, the quenching electricity
The work of road control single-photon avalanche diode is with closing and producing pulse.
Further, inside quenching circuit, single-photon avalanche diode is operated in Geiger (Geiger) area, that is, singly
Photon avalanches diode both end voltage is higher than the breakdown voltage of single-photon avalanche diode in itself, therefore in the pole of single-photon avalanche two
Pipe is internally formed very high electric-field intensity, and there are free electron or the electron hole pair produced by absorption photon, monochromatic light in inside
Sub- avalanche diode can produce very big avalanche current, anode parasitic capacitance of this beam electronic current to single-photon avalanche diode
Charging causes anode voltage to rise to some magnitude of voltage, so that the avalanche current for causing single-photon avalanche diode to produce in itself
It is gradually reduced.
Further, the simulation counting circuit is counted for the umber of pulse produced and produces corresponding magnitude of voltage,
Mainly the electric charge between two electric capacity is shared to realize, constantly to one of electric capacity set, Ran Houchong in specific implementation
Strike-on opens closing switch so that the capacitance on another electric capacity changes according to set value, shown in the formula in face specific as follows：
Wherein, CpIt is the parasitic capacitance between transistor M2 and M3, CcapIt is transistor M4 electric capacity, VcountIt is on M4
Magnitude of voltage size, VbiasIt is the external bias voltages of M2.
Further, the reading circuit is made up of a source follower, is mainly used for isolating VcountAnd back-end circuit,
And the voltage on simulation counting circuit can be read and subsequent conditioning circuit is transmitted to and handled.
Further, pixel circuit design uses 5 nmos pass transistors and 1 single-photon avalanche diode.
The single photon cmos image sensor image element circuit of the present invention, only uses 5 nmos pass transistors and 1 SPAD, knot
Structure is simplified, it is adaptable to high-resolution single photon cmos image sensor.
[brief description of the drawings]
Fig. 1 is the fluorescence lifetime detection principle diagram that the present invention is implemented.
Fig. 2 is the experiment porch needed for the present invention is implemented.
Fig. 3 is the single photon cmos sensor system architecture diagram that the present invention is implemented.
Fig. 4 is the single photon cmos image sensor image element circuit figure that the present invention is implemented.
Fig. 5 is the timing diagram of circuit of embodiment of the present invention work.
[embodiment]
In order that the technological means that the present invention is realized is clear, the present invention is further elucidated below.
With reference to shown in accompanying drawing 4 and accompanying drawing 5, the single photon cmos image sensor image element circuit of low pixel size, comprising quenching
Ignition circuit, simulation counting circuit and reading circuit, quenching circuit on one side connection simulation counting circuit, simulation counting circuit one end connects
Reading circuit is connect, quenching circuit contains a single-photon avalanche diode and quenching transistor, and the quenching circuit controls monochromatic light
The work of sub- avalanche diode is with closing and producing pulse.Inside quenching circuit, single-photon avalanche diode is operated in Geiger
(Geiger) area, that is, single-photon avalanche diode both end voltage are higher than the breakdown voltage of single-photon avalanche diode in itself,
Therefore very high electric-field intensity is internally formed in single-photon avalanche diode, there is free electron inside or produced by absorption photon
Raw electron hole pair, single-photon avalanche diode can produce very big avalanche current, and this beam electronic current is to single-photon avalanche
The anode parasitic capacitance of diode, which charges, causes anode voltage to rise to some magnitude of voltage, so as to cause the pole of single-photon avalanche two
The avalanche current that pipe is produced in itself is gradually reduced.Simulation counting circuit is counted and produced corresponding for the umber of pulse produced
Magnitude of voltage, mainly the electric charge between two electric capacity share to realize, constantly to one of electric capacity set in specific implementation,
Then either on or off switch is repeated so that the capacitance on another electric capacity changes according to set value.Reading circuit is by one
Source follower is constituted, and is mainly used for isolating VcountAnd back-end circuit, and the voltage on simulation counting circuit can be read simultaneously
Subsequent conditioning circuit is transmitted to be handled.
The course of work of above-described single photon cmos image sensor image element circuit is as follows:Vq is set to 0 first,
So that the electric current on NMOS M1 transistors is almost 0, in once photosensitive V afterwardspHigh potential is latched in, so that NMOS M2
Transistor is in the conduction state, and Vc now is set into high level so that NMOS M3 transistor turns, then by VbiasSet
For high level 3.3V, to VcountReset, afterwards, V is setqFor 600mV so that NMOS M1 transistors are operated in subthreshold value
Area, is equal to a discharge current source, by VpSet is 0, so as to close NMOS M2 transistors, now, it is height to remain in that Vc
Level, NMOS M3 transistors are in the conduction state, change VbiasFor VL, to parasitic capacitance CpOn voltage set be VL.
Remain in that VqFor 600mV, by VpSet is 0, and single-photon avalanche diode enters working condition.After photosensitive
A snowslide pulse is produced, now single-photon avalanche diode enters dead band, it is impossible to avalanche current is produced again, during by one section
Between electric discharge after be again introduced into workspace.VpThe electric pulse driving NMOS M2 transistors of upper generation are opened so that NMOS M4
Transistor and parasitic capacitance CpConducting produces electric charge and shared, so as to reduce VcountOn voltage, and reached count purpose,
VcountOn voltage drop can be expressed by following equation：
In this secondary design, dynamic range and the factor of signal to noise ratio, Δ V are consideredcountFor 15mV, then pass through multiple light
After sub-count, VcountOn voltage read out by source class follower NMOS M5 transistors, continue to transfer at subsequent conditioning circuit
Reason, whole circuit is operated in nanosecond order to photon counting, has reached the requirement required for measurement fluorescence lifetime.
Fig. 3 is the system architecture diagram of the single photon cmos image sensor of the present embodiment, by image element circuit module, decoder
Constituted with drive module, the part of row reading circuit module three.Image element circuit module is mainly used to carry out photon to single pixel point
Count, decoder and drive module are used for producing the control signal and offset signal required for every a line, row reading circuit module
The magnitude of voltage of each pixel generation is read line by line and analog-to-digital conversion is carried out, and produces data signal finally by buffering electricity
Road is read out.
The present embodiment single photon cmos image sensor image element circuit, passes through 5 nmos pass transistors and 1 single-photon avalanche
Diode is constituted, and structure is simplified, it is adaptable to high-resolution single photon cmos image sensor.
The preferred embodiment of the present invention is the foregoing is only, protection scope of the present invention is not limited in above-mentioned embodiment party
Formula, every technical scheme for belonging to the principle of the invention belongs to protection scope of the present invention.For those skilled in the art
Speech, some improvement carried out on the premise of the principle of the present invention is not departed from, these improvement also should be regarded as the protection model of the present invention
Enclose.
Claims (6)
1. a kind of single photon cmos image sensor image element circuit of low pixel size, it is characterised in that：Include quenching circuit, mould
Intend counting circuit and reading circuit, quenching circuit on one side connection simulation counting circuit, simulation counting circuit one end connection reads electricity
Road.
2. single photon cmos image sensor image element circuit according to claim 1, it is characterised in that：The quenching circuit
Containing a single-photon avalanche diode and quenching transistor, the work of quenching circuit control single-photon avalanche diode with
Close and produce pulse.
3. single photon cmos image sensor image element circuit according to claim 2, it is characterised in that：In quenching circuit
Face, single-photon avalanche diode is operated in Geiger (Geiger) area, that is, single-photon avalanche diode both end voltage higher than single
The breakdown voltage of photon avalanches diode in itself, therefore it is internally formed in single-photon avalanche diode very high electric-field intensity,
There are free electron or the electron hole pair produced by absorption photon in inside, and single-photon avalanche diode can produce very big snow
Electric current is collapsed, this beam electronic current charges to the anode parasitic capacitance of single-photon avalanche diode causes anode voltage to rise to some
Magnitude of voltage, so that the avalanche current for causing single-photon avalanche diode to produce in itself is gradually reduced.
4. single photon cmos image sensor image element circuit according to claim 1, it is characterised in that：The simulation is counted
Circuit is counted for the umber of pulse produced and produces corresponding magnitude of voltage, and mainly the electric charge between two electric capacity is total to
Enjoy realizing, constantly to one of electric capacity set in specific implementation, then repeatedly either on or off is switched so that another electricity
Capacitance in appearance changes according to set value, specifically as shown in following formula：
<mrow>
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<mi>&Delta;V</mi>
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Wherein, CpIt is the parasitic capacitance between transistor M2 and M3, CcapIt is transistor M4 electric capacity, VcountIt is the voltage on M4
It is worth size, VbiasIt is the external bias voltages of M2.
5. single photon cmos image sensor image element circuit according to claim 1, it is characterised in that：The reading circuit
It is made up of a source follower, is mainly used for isolating VcountAnd back-end circuit, and can read on simulation counting circuit
Voltage is simultaneously transmitted to subsequent conditioning circuit and handled.
6. the single photon cmos image sensor image element circuit according to right any one of 1-4, it is characterised in that：Whole pixel
Circuit design is only with 5 nmos pass transistors and 1 single-photon avalanche diode.
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| CN201710271866.XA CN107222694B (en) | 2017-04-24 | 2017-04-24 | Low-pixel-size single-photon CMOS image sensor pixel circuit |
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| CN107222694B CN107222694B (en) | 2020-07-14 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111491116A (en) * | 2019-01-28 | 2020-08-04 | 原相科技股份有限公司 | Image sensor using avalanche diode |
| ES2849224A1 (en) * | 2020-02-14 | 2021-08-16 | Consejo Superior Investigacion | PULSE OR COMBINATION DIGITAL PHOTOMULTIPLIER (Machine-translation by Google Translate, not legally binding) |
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|---|---|---|---|---|
| US7262402B2 (en) * | 2005-02-14 | 2007-08-28 | Ecole Polytechnique Federal De Lausanne | Integrated imager circuit comprising a monolithic array of single photon avalanche diodes |
| CN102538988A (en) * | 2012-02-08 | 2012-07-04 | 南京邮电大学 | Quenching and reading circuit for single photon avalanche diode imaging device |
| CN103148950A (en) * | 2013-03-15 | 2013-06-12 | 中国电子科技集团公司第四十四研究所 | Integrated gating active quenching/restoring circuit |
-
2017
- 2017-04-24 CN CN201710271866.XA patent/CN107222694B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7262402B2 (en) * | 2005-02-14 | 2007-08-28 | Ecole Polytechnique Federal De Lausanne | Integrated imager circuit comprising a monolithic array of single photon avalanche diodes |
| CN102538988A (en) * | 2012-02-08 | 2012-07-04 | 南京邮电大学 | Quenching and reading circuit for single photon avalanche diode imaging device |
| CN103148950A (en) * | 2013-03-15 | 2013-06-12 | 中国电子科技集团公司第四十四研究所 | Integrated gating active quenching/restoring circuit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111491116A (en) * | 2019-01-28 | 2020-08-04 | 原相科技股份有限公司 | Image sensor using avalanche diode |
| CN111491116B (en) * | 2019-01-28 | 2022-07-19 | 原相科技股份有限公司 | Image sensor using avalanche diode |
| ES2849224A1 (en) * | 2020-02-14 | 2021-08-16 | Consejo Superior Investigacion | PULSE OR COMBINATION DIGITAL PHOTOMULTIPLIER (Machine-translation by Google Translate, not legally binding) |
| WO2021160916A1 (en) * | 2020-02-14 | 2021-08-19 | Consejo Superior De Investigaciones Científicas | Or pulse combination digital photomultiplier |
| US11747194B2 (en) | 2020-02-14 | 2023-09-05 | Consejo Superior De Investigaciones Cientificas (Csic) | OR pulse combination digital photomultiplier |
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