CN107210101B - Electrode, the method for manufacturing electrode and the method for generating partial breakdown - Google Patents
Electrode, the method for manufacturing electrode and the method for generating partial breakdown Download PDFInfo
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Abstract
Electrode, the method for manufacturing electrode and the method for generating partial breakdown.It is formed in the system of insulating deposits in the normal operation period, electrode is arranged so that deposit has the effect of generating three engaging portions in situ.These three engaging portions enhance low level discharge activities, to facilitate the partial breakdown of deposit and keep the conductivity of electrode.Discharge activities around three engaging portions generate local plasma cleaning, and thus keep localizing electrode's surface conductivity and overall electrode function.
Description
Cross reference to related applications:
This application claims the power of the co-pending provisional patent application No.62/067,693 submitted on October 23rd, 2014
Benefit；All the contents of the application are incorporated by reference into herein.
Technical field
The present invention relates to the uses of internal field's enhancing, and are designed to deposit in insulation more particularly, to introducing
Object is formed as the feature that three engaging portions (triple junction) in situ are generated in the system of a part of normal operating.It waits
Conductor is selected usually to be operated under the conditions of clean, ideal lower than electrical breakdown threshold.This consider with it is pre- in normal operating
The deterioration that the associated voltage of pollution of phase is kept.Deposit can be loose, the unbonded accumulation of substance (such as dust).
Deposit can also take the form of adhesive layer, or be formed by chemically reacting.The example of insulating deposits can be formed
It include: corona ring, insulator gradient rings and the spark gap for being exposed to pollutant, such as spark plug.To vacuum system (as charged
Particle accelerator and plasma tool) in electrode give and pay special attention to.
Background technique
In liquid, gas or vacuum environment, electrode fouling object may need to safeguard, otherwise lead to high-voltage breakdown.All
As in the semiconductor manufacturing tool based on vacuum of plasma and ion beam, breakdown can increase particle generation.It is being powered
Electrode on, hard power supply breakdown (also referred to as " failure (glitch) ") can dramatically increase particle generation.This is unfavorable, because
Particle can lead to the production loss in semiconductors manufacture, therefore routinely monitor number of particles.Tool qualification and continue to operate
It needs for number of particles to be maintained at maximum allowable tolerance or less.What is desired is that can be increased by maintaining threshold population quantity
The technology of service life, this will increase service life and is economically desirable.
Electrode, insulator and three engaging portions:
Insulator is the critical component of any electrical system, and the mechanism of insulator failures is caused to have been obtained extensively
Research.In vacuum, gas or non-electrically conductive liquid system, dielectric-metal-insulator converges referred to as " three engaging portions "
(or " 3 points (triple point) ").Electric-field enhancing at three engaging portion of vacuum may cause insulator breakdown.For example,
Referring to"Analytic expression for triple-point electron emission from an
ideal edge",Appl.Phys.Lett.72(4),26January 1998；Chung et al.,"Configuration-
dependent enhancements of electric fields near the quadruple and the triple
junction",J.Vac.Sci.Tech.B28,C2A94,2010；Stygar et al.,"Improved design of a
high-voltage vacuum-insulator interface",Phys.Rev.ST Accel Beams 8,050401
(2005)。
In a vacuum, the acute angle of the intersection point between the insulator and cathode on inlet side can be at three engaging portion of cathode
Generate mathematics field singularities.Then, electronic field emission can generate creep discharge along insulator surface, and lead to final event
Barrier.Obtuse angle between insulator and anode can generate mathematics singular point in the electric field at three engaging portion of anode, can lead
Cause insulator body breakdown (bulk insulator breakdown).Referring to Fig. 1, according to U.S. Patent Application Publication
A target of No.2014/0184055, research and development are, blunt by inlet side of the design at 12 3 engaging portion of cathode
Angle 10 and acute angle theta at 14 3 engaging portion of anode increase insulator service life.To three engaging portions enhancing breakdown
Concern extend to submicron feature sizes from gross feature size.For example, with reference to the United States Patent (USP) No.5739 of Takada,
628。
The research of three engaging portion of vacuum breakdown is usually carried out using clean vacuum, without free charge or ionization spoke
It penetrates.Thus, it is relatively limited for studying influence of the deposit in beam or plasma environment.However, electric in the ion beam
Breakdown voltage can be reduced to a part of the breakdown voltage for clean electrode by the homogeneous conductive deposit on extremely.For example, ginseng
See Vanderberg, et.al., " Evaluation of electrode materials for ion implanters ",
IEEE 0-7803-X/99,pp.207-210。
Compared with clean vacuum, the presence of plasma introduces multiple problems.It is (main that plasma provides free charge
It is electronics) and radiation (especially UV), with enough ionizing energies.Even if diffusing plasma for greater than 0.01cm's
Feature also implies Debye shielding.Free charge and UV radiation are significant adverse to the integrality of insulator, but the effect of Debye shielding
Fruit is not obvious.Plasma sheath is that dynamically, have high fluctuation electric field in the distance of very little.Importantly, should
The conformal nature (conformal nature) of sheath effectively makes time averaging sheath electric field orthogonal with material boundary.For example,
In the case where positive plasma or beam current potential, ground connection boundary is in cold-post potential, and plasma is anode.Three
At engaging portion, this has effectively reproduced the long discharge geometry with anode at 90 degree of three engaging portion insulators.
Semiconductor plasma and beam system can be direct current (dc), radio frequency (rf) and/or pulse power supply.They by with
It is deposited in etching, cleaning, doping and material.Semiconductor technology may it is particularly harsh, sometimes even simultaneously include refractory temperature,
Oxidisability chemical substance and energy particle bombardment.Electrode can accumulate the deposit as process byproducts.Insulating deposits
It is particularly troublesome, especially there are free charge or ionising radiation.
Many systems have the directionality of natural formation.For the extensive high-pressure system for being exposed to atmosphere, this can
It can be simply gravity.Plasma and ion beam technology often rely on energy particle.In this case, deposit is formed
Can have by energy particle, or by the impact from energy particle and directionality that the material of backscattering is assigned.
Electrically breakdown activity is typically found in the system with high electric field the low current of transient state.In air or vacuum,
This is referred to as corona.Corona cleaning or plasma discharge cleaning are well-known, and are commonly used as the adjusting of high-field electrode
Technique.The activity of transient state can be monitored by quickly tracking electrode current or voltage.The definition of " breakdown " be it is subjective, depend on
In system requirements.Some system simple operations are until completely insulator failure.It in other cases, is more than current or voltage
The spark of threshold value starts to trigger power interruptions with damage-limiting.
The description of the prior art:
Insulation in industrial products (Siemens's dielectric barrier discharge) the effective use plasma of entire classification on electrode
The property of body.For example, with reference to Kogelschatz et al., " Dielectric-Barrier Discharges.Principle
and Applications",Journal de Physique IV,1997,07(C4),pp.C4-47-C4-66。
Three engaging portions enhancing effectively extends to dielectric barrier discharge process.For example, with reference to PCT Application Publication
No.WO 2004/026461 A1。
What is desired is that for maintaining localizing electrode's surface conductivity and overall electrode function, while system being avoided to puncture threshold
System, device and the method for value.What is also needed is such a system, that is, wherein the electrode features of geometry promote three
Join the formation of engaging portion, which promotes the clean electric discharge of local plasma for generating the part of electrode surface to live
It is dynamic.
Summary of the invention
Therefore, the purpose of the present invention is to shape electrode features, to promote to form insulating deposits in the normal operation period
To generate three engaging portions in situ.Discharge activities around three engaging portions generate local plasma cleaning, and thus keep
Localizing electrode's surface conductivity and overall electrode function.It is problem using (such as semiconductor system that wherein particle, which is generated,
Make), another expection benefit is to reduce net particle during service life to generate.
Although the present invention is illustrated and described herein as three engaging portions in situ are embodied and are formed to maintain electrodes conduct
Rate, but it is not intended to be limited to shown details, because not departing from spirit of the invention and in the equivalents of the claims
Range and boundary in, can carry out various modifications wherein and structural change.
However, when read in conjunction with the accompanying drawings, structurally and operationally method of the invention with its add objects and advantages together with will
It is got the best understanding from the description of following specific embodiments.
Detailed description of the invention
Fig. 1 is the sectional view according to prior art with the device of the dielectric of setting between the anode and the cathode；
Fig. 2 is a particular implementation according to the present invention, by weight in the hidden part at the top of geometric field enhances
The simplification diagrammatic illustration for three engaging portions that the insulating deposits of power accumulation are formed；
Fig. 3 A is the simplification diagrammatic illustration for indicating the array of the electrode features according to a particular implementation, the electrode features
Array be designed to insulator coating accumulate and form hidden three engaging portion；
Fig. 3 B is to exemplify the figure of the minimum influence of array (such as array of the feature of Fig. 3 A) of feature, the array of this feature
Being designed to generation tool, there are two hidden three engaging portions of the simulation electrostatic potential profile between electrode；
Fig. 4 is the simplification diagrammatic illustration of the single electrode fin orthogonal with insulating particle, and insulating particle passes through energy charged particle
And directionality is endowed to be formed in hidden three engaging portion for understanding that present invention aspect is useful；
Fig. 5 is the simplification diagrammatic illustration of the single electrode fin of a particular implementation according to the present invention, shows and passes through
Hidden three engaging portion is formed from the insulating materials of artistic face backscattering；And
Fig. 6 be according to embodiment of the present invention, by the hidden part of geometry enhanced field gravity accumulate
The simplification diagrammatic illustration for two three close engaging portions that insulating deposits are formed.
Specific embodiment
It is an object of the present invention to provide such a system and method, wherein electrode features are shaped, so that just
The insulating deposits often formed during operation generate three engaging portions in situ.Therefore, the discharge activities at three engaging portions are at this
Local plasma cleaning is realized in three area of joinder, keeps localizing electrode's surface conductivity and overall electrode function as a result,
Energy.Using careful design, the effective angle of insulating deposits can be made at an acute angle relative to cathode boundary.This geometry
It is destroyed to insulator, as described in the U.S. Patent Application Publication No.2014/0184055 in Lauer etc..However, going out
In the purpose of the present invention, this insulator destruction be it is desired, to execute part cleaning or removal natural shape at the electrode surface
At insulating deposits.For semiconductor application, another specific benefit is intended to reduce the service life period in device
Interior net particle generates.
Referring to Fig. 2, a specific reality of the electrode features 105 that can be formed in the surface of electrode 100 is instantiated
Mode is applied, which is designed to the advantages of taking gravity direction.The deposit fallen forms particle 110 in electricity
It accumulates, but is not accumulated in the hidden part 105a of this feature on the expose portion of pole feature 105.More specifically, feature 105
It is shaped as the geometric field enhancing top section 105a including this feature 105, geometric field enhancing top section 105a is set
At to form two three engaging portions 120,130 at the electrode surface.In other words, feature 105 is formed with a part
105a, which is suspended from a part of the electrode surface of another part of feature 105, or is blinded by feature
A part of the electrode surface of 105 another part.Therefore, although the upper surface of a part 105a is exposed to deposit
Particle 110 is formed, but the rest part of a part 105a is shaped as a part on bucking electrode surface and is allowed to not fallen
Under sediment forming material 110.The layer 110c of insulating deposits is formed on the upper surface of a part of 105a as a result, but
It is not formed on the electrode surface of the hidden part of a part 105a.
In the embodiment of Fig. 2, three engaging portions 120 shape near the field of feature 105a enhancing tip 105b
At, and second three engaging portion 130 is formed in the plane under the 105b of tip.It should be noted that insulation thickness 110a,
110b, 110c can be smaller relative to this feature size, so thickness shown in Fig. 2 is intended to for exemplary purposes, rather than
In proportion.Furthermore, it should be noted that arriving, insulator 110b is relative to the opposite pole above the bottom 105c and electrode 100 in feature 105
Electric field between property electrode, beam or plasma is at an acute angle.Three engaging portions 120,130 will generate partial dis-charge activity, should
Partial dis-charge activity leads to the deposit formed on the surface of electrode 100 part in the region of three engaging portions 120,130
Thus breakdown keeps localizing electrode's surface conductivity.In addition, do not form three engaging portion before the use, and on the contrary, this hair
It is bright that three engaging portions in situ are formed using the deposit obtained at the electrode surface during normal use.
As all geometrical characteristics being described herein, feature 105 can be added by molding, cutting, milling, machinery
Work, 3D printing etc. are formed in the electrodes.For purposes of this application, term " hidden " is used to indicate that such area of a feature
Domain, that is, prevent to form deposit on the area by the directionality of the particle of the shape and formation deposit of this feature.Example
Such as, in the embodiment of Fig. 2, the hidden part of feature 105 be from top feature 105a stop receive gravity accumulation (that is, to
Under direction) deposit region.Similarly, in other embodiment as described herein, " hidden " region of feature
Be created as this feature, the oriented flow that particle is formed from deposit is shielded by this feature another part in the paths
A part.For example, with reference to the embodiment of Fig. 4 and Fig. 5.Shielding or hidden region and formation as a result, at the electrode surface
Hidden three engaging portion is formed at the point for having the region intersection of insulating deposits.
Referring to Fig. 3 A, the array of electrode features 105 is shown (that is, for example can be the geometrical characteristic 105 of Fig. 2
Array), these electrode features 105 are designed to form hidden three as insulator coating is accumulated during normal electrode use
Join engaging portion.In relative scalar, similar feature 105 can be embedded into any electrode.Fig. 3 B is shown for Fig. 3 A's
Electrode uses the 2D electrostatic simulation in 10kV, 1cm flat electrode gap, to illustrate the array of geometrical characteristic 105 in the gap
Field has insignificant influence.In the simulation illustrated by, the nominal increase only 20% of field strength, and effect is between entering
It disappears at the 10% of the distance of gap.Enhance similar to geometric field, the opposite scaling of feature is critically important for electrostatic field, although important
Physical effect it is sensitive to absolute measure.
Referring to Fig. 4, the single electrode fin that formation is orthogonal with insulating particle 220 on the surface of electrode 210 is shown
200 embodiment, the insulating particle are endowed directionality by energy charged particle 230.It should be noted that although showing
Single fin 200 is gone out, but for purposes of the present invention, the array of this fin can be formed on the electrode.More specifically, having
In the system for having oriented energy ion, those ions have angle stragging and power dissipation.Via the collision with background gas, or
It hits and falls from wall, energetic ion generates the dispersion of charged particle 230 and neutral particle 220 in the same direction.If energy from
Son is poor element conductor, such as silicon or boron, then can the geometrical characteristic 200 designed for the purpose hidden part (that is,
In this case, it is horn shape face 205) three engaging portions of middle formation original position.In this case, it shows orthogonal with fin 200
Particle direction, and three engaging portions 235 generate caused by the geometric field enhancing generated due to fin 200 itself and corona is movable
The discharge activities of addition generate the partial breakdown for the deposit being formed on as a result,.The relative angle in the face 205 of fin 200 can
To need to be adjusted according to optimization, and as described above, the design can extend to array.
The backscattering that Fig. 5 instantiates the collision from energy particle can also be used in the geometry designed for this purpose
Hidden three engaging portion is generated in feature 250.In special embodiment illustrated, geometrical characteristic 250 is arranged in electrode 240
Surface on fin 250 or fin 250 array.In addition, being formed by insulating layer for illustration as the embodiment of front
260 purpose, this feature are not in proportion.In this case, fin 250 is shown as being parallel to artistic face 270, but can
Significantly to adjust the relative angle, so that benefit maximizes, and the design can extend to the array of fin 250.Therefore, from
The insulating materials of 270 backscattering of artistic face accumulates on the horn shape face 255 of feature 250, rather than in the other side (that is, hidden
Cover side) on accumulate, three engaging portions 280 are consequently formed.Three engaging portions 280 will promote discharge activities, which will be from
Remove deposit in the tip of feature 250.In addition, generation is led to the movable geometry of the corona at tip by the geometrical characteristic itself
Field enhancing, generates the partial breakdown for the deposit being formed on as a result,.
In having directive system, three engaging portion features can be located adjacent to other three engaging portions feature,
To realize the mutual benefit of discharge activities, as schematically illustrated in Fig. 6；In this case, the directionality orthogonal with surface, such as
Gravity.Electrode 300 is formed to include one or more geometrical characteristics 305, and the top feature 305a of the electrode 300 generates guarantor
A part of feature 305 is protected not by the hidden part of deposit particle 110.Deposit 310a, 310b and 310c is in electricity as a result,
Formed on the surface of pole, and be this feature not by top feature 305a cover part in formed.With deposit shape
At insulating layer 310c, at top, the back side of feature 305a forms hidden three engaging portion 320, which has
There are some geometric fields to enhance.Similarly, as deposit 110 forms insulating layer 310b, in the first hidden three engaging portion 320
Lower section forms the second hidden flat three engaging portion 330.Two three engaging portions 320,330 are sufficiently closed to each other to enhance part
Discharge activities.
In terms of expected pollution, the electrode with the feature for promoting to be formed in situ three engaging portions can be manufactured, to produce
Raw part cleaner discharge activity.It can be obtained using the known insulator with controlled medium and material properties additional excellent
Point.
Therefore, embodiments of the present invention more particularly in the normal operation period formed insulating deposits system in intentionally
Ground introduces three engaging portions in situ.Resulting three engaging portion enhances low level discharge activities, and low level electric discharge is lived
The dynamic partial breakdown for facilitating the deposit on electrode, to keep electrode conductivity.In semiconductor manufacturing tool, it is contemplated that benefit
Place is that net particle is reduced.
Although being shown here and describing the preferred embodiment of the present invention, it is to be understood that, the present invention can be with difference
It is embodied in this paper particular instantiation or the other way of description, and in these embodiments, is not departing from by appended
Claims limit the principle of the present invention in the case where, can carry out details and construction aspect and component layout it is certain
Change.
Claims (19)
1. a kind of method for manufacturing electrode, method includes the following steps:
The surface for making the electrode includes at least one geometrical characteristic, at least one described geometrical characteristic is provided in validity period
Between generate at least one three engaging portion, the geometrical characteristic includes:
First surface part, the first surface part are configured to be exposed to deposit formation particle in use；And
Hidden surface portion, the hidden surface portion is avoided by use is exposed to deposit formation particle, described hidden
Surface portion is adjacent with the first surface part.
2. according to the method described in claim 1, wherein, at least one described geometrical characteristic is the array of geometrical characteristic, each
A geometrical characteristic all include be configured to be exposed in use deposit formed particle the first surface part and
It is avoided by use and is exposed to the hidden surface portion that deposit forms particle, the hidden surface portion and described first
Surface portion is adjacent.
3. according to the method described in claim 1, the method also includes following steps:
Determine that deposit forms the directionality of particle in electrode environment to be used；And
The first surface part is set and forms particle to receive deposit from identified direction.
4. according to the method described in claim 3, the method also includes following steps:
The hidden surface portion is set, so that the hidden surface portion is avoided from institute really by the first surface part
The deposit in fixed direction forms particle.
5. according to the method described in claim 1, wherein, the first surface part is configured to avoid in use described hidden
It covers surface portion and is exposed to deposit formation particle.
6. a kind of electrode with surface, the electrode include:
At least one geometrical characteristic, at least one described geometrical characteristic are configured to generate at least one three connection during use
Conjunction portion, the geometrical characteristic include:
First surface part, the first surface part are configured to be exposed to deposit formation particle in use；And
Hidden surface portion, the hidden surface portion is avoided by use is exposed to deposit formation particle, described hidden
Surface portion is adjacent with the first surface part.
7. electrode according to claim 6, wherein the first surface part is configured to avoid in use described hidden
It covers surface portion and is exposed to deposit formation particle.
8. electrode according to claim 6, wherein the first surface part, which is configured to receive, has first party tropism
Deposit formed particle.
9. electrode according to claim 8, wherein the hidden surface portion is configured such that the hidden surface element
The deposit for avoiding exposure to have the first party tropism is divided to form particle.
10. electrode according to claim 6, wherein the geometrical characteristic is arranged to protruding portion, and first table
Cover the hidden surface portion in face part.
11. electrode according to claim 10, wherein the geometrical characteristic is configured to generate two three in use
Engaging portion, the one or three engaging portion in described two three engaging portions be formed in by the first surface part with it is described hidden
The 2nd 3 below the tip for the protruding portion of surface portion being crossed to form, and in described two three engaging portions is coupled conjunction
Portion is formed in the plane below the tip.
12. electrode according to claim 11, wherein the geometrical characteristic is configured to make the one or three engaging portion
It is located adjacent to the two or three engaging portion, to enhance the low level discharge activities of described two three engaging portions.
13. electrode according to claim 10, wherein at least one described geometrical characteristic is that at least one described geometry is special
The array of sign.
14. electrode according to claim 6, wherein at least one described geometrical characteristic is at least one electrode fin, described
At least one electrode fin is configured to orthogonally stretch out from the electrode with the direction of insulating particle in use.
15. electrode according to claim 14, wherein at least one described electrode fin is the array of electrode fin.
16. a kind of method for the partial breakdown for generating the deposit formed on the surface of electrode, method includes the following steps:
The electrode with the surface including at least one geometrical characteristic is provided, at least one described geometrical characteristic, which is provided in, to be made
At least one three engaging portion is generated with period, the geometrical characteristic includes:
First surface part, the first surface part are configured to be exposed to deposit formation particle in use；And
Hidden surface portion, the hidden surface portion is avoided by use is exposed to deposit formation particle, described hidden
Surface portion is adjacent with the first surface part；
The directionality that particle is formed based on the deposit in high-voltage system in use, orients institute in the system
State electrode, wherein the first surface part is oriented to be exposed to deposit formation particle, and the hidden surface portion
It is avoided by exposure；
Deposit is formed on the first surface part in use, the deposit is being formed in the first surface part
On deposit and the hidden surface portion electrode surface between interface at generate at least one three engaging portion；With
And
When the system is in use, at least one described three engaging portion generate partial dis-charge activity to puncture the electrode
On the deposit at least part.
17. according to the method for claim 16, wherein at least one described geometrical characteristic is that at least one described geometry is special
The array of sign.
18. according to the method for claim 16, wherein the geometrical characteristic is configured to generate two three in use
Engaging portion, the one or three engaging portion in described two three engaging portions be formed in by the first surface part with it is described hidden
Below the tip for the protruding portion of surface portion being crossed to form, and the two or three engaging portion shape in described two three engaging portions
At in the plane below the tip.
19. according to the method for claim 16, wherein at least one described geometrical characteristic is at least one electrode fin, institute
State that at least one electrode fin is configured to when the system is in use and the direction of insulating particle is orthogonally from the electrode
It stretches out.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462067693P | 2014-10-23 | 2014-10-23 | |
| US62/067,693 | 2014-10-23 | ||
| PCT/US2015/057156 WO2016065284A1 (en) | 2014-10-23 | 2015-10-23 | In-situ triple junction formation to maintain electrode conductivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107210101A CN107210101A (en) | 2017-09-26 |
| CN107210101B true CN107210101B (en) | 2019-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580070589.5A Active CN107210101B (en) | 2014-10-23 | 2015-10-23 | Electrode, the method for manufacturing electrode and the method for generating partial breakdown |
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| JP7145424B2 (en) * | 2018-08-29 | 2022-10-03 | パナソニックＩｐマネジメント株式会社 | discharge device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5739628A (en) * | 1995-05-31 | 1998-04-14 | Nec Corporation | Field emission type cold cathode device with conical emitter electrode and method for fabricating the same |
| CN101689462A (en) * | 2007-06-25 | 2010-03-31 | 瓦里安半导体设备公司 | Prevent the unsettled high voltage insulator of due to triple-junction breakdown in the ion implantor |
| CN102730627A (en) * | 2011-03-31 | 2012-10-17 | 富士胶片株式会社 | Forming curved features using a shadow mask |
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| US20030136505A1 (en) * | 2002-01-18 | 2003-07-24 | Wimmer Phillip L. | Method of preparing a surface for adhesion |
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| US5739628A (en) * | 1995-05-31 | 1998-04-14 | Nec Corporation | Field emission type cold cathode device with conical emitter electrode and method for fabricating the same |
| CN101689462A (en) * | 2007-06-25 | 2010-03-31 | 瓦里安半导体设备公司 | Prevent the unsettled high voltage insulator of due to triple-junction breakdown in the ion implantor |
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