CN107204388A - A kind of silicon slice processing method of heterojunction solar battery - Google Patents

A kind of silicon slice processing method of heterojunction solar battery Download PDF

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Publication number
CN107204388A
CN107204388A CN201610150143.XA CN201610150143A CN107204388A CN 107204388 A CN107204388 A CN 107204388A CN 201610150143 A CN201610150143 A CN 201610150143A CN 107204388 A CN107204388 A CN 107204388A
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China
Prior art keywords
silicon chip
annealing
silicon
processing method
solar battery
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CN201610150143.XA
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Inventor
庄辉虎
林锦山
宋广华
杨与胜
王树林
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Gs-Solar (china) Co Ltd
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Gs-Solar (china) Co Ltd
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Priority to CN201610150143.XA priority Critical patent/CN107204388A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a kind of silicon slice processing method of heterojunction solar battery, comprise the following steps:First silicon chip is carried out to go damage to handle;Silicon chip is made annealing treatment again, metal impurities and crystal defect is induced to surface displacement in silicon chip formation clean area;Then allow silicon chip to carry out two sides making herbs into wool processing, form pyramid matte;Chemical cleaning is carried out again, removes chemical oxide layer and surface residual, and be passivated silicon chip surface;Silicon chip is finally subjected to double annealing processing, promotes oxygen in silicon chip to extend out by hydrogen, allows silicon chip surface to form Fu Yang areas.The present invention is corroded using corrosive solution to silicon chip surface, get rid of after the mechanical damage layer on surface, it is put into short annealing in atmospheric air, metal impurities and crystal defect are induced to surface displacement formation clean area, then it is placed again into double annealing in high-purity hydrogen after chemical making herbs into wool and cleaning, promote Oxygen in silicon to extend out using hydrogen so that silicon chip surface formation Fu Yang areas, effectively eliminate the metal impurities of silicon chip surface and improve oxygen content.

Description

A kind of silicon slice processing method of heterojunction solar battery
Technical field
The present invention relates to area of solar cell, more particularly to a kind of silicon chip of heterojunction solar battery Processing method.
Background technology
TheCourse of PV Industry is rapid under energy crisis, and the key of further genralrlization photovoltaic application is to improve electricity Pond photoelectric transformation efficiency, reduces battery cost.Heterojunction solar battery is Si Grown amorphous The hetero-junction solar cell of Si thin layers, with simple in construction, technological temperature is low, high conversion efficiency, temperature is special Property it is good the characteristics of, one of high-efficiency battery of large-scale promotion application is suitable for, with good development Prospect.
Monocrystalline silicon heterojunction solar cell is generally using n-type Si as substrate, typical structure such as Fig. 1 It is shown, the intrinsic amorphous Si layer of priority stringer and p-type amorphous Si on n-type Si substrate smooth surfaces Layer forms emitter stage;Back surface field is formed by thin intrinsic amorphous Si layer and n-type amorphous Si layer in another side; With the method deposition transparent conductive oxide film of magnetron sputtering on the amorphous Si thin layers of two sides doping, most Afterwards metal electrode of the grating is formed in battery top and bottom.Prepare before efficient heterojunction solar battery It is that requirement monocrystalline silicon silicon chip substrate fault in material and impurity are few to carry, and surface cleanliness is high, can so subtract Few recombination probability of the carrier in transport process, it is real so as to improve short circuit current flow and open-circuit voltage Now higher photoelectric transformation efficiency.
The surface treatment of silicon chip of solar cell is realized by multiple tracks wet chemical technology, be first for Silicon chip surface mechanical damage layer caused by wire cutting is removed, silicon chip surface is then reduced by pickling Metallic particles, finally removal surface chemical oxide layer and surface liquor residue caused by chemical treatment. But the simple top layer that can only handle silicon chip with the mode of wet-chemical effectively can not remove or reduce silicon chip Interior metal impurity.
The content of the invention
In view of the above-mentioned problems, the invention provides a kind of silicon slice processing method of heterojunction solar battery And its preparation technology, solve because prior art can only handle merely silicon chip by the way of wet-chemical Top layer effectively can not remove or reduce the defect of silicon chip interior metal impurity.
In order to solve the above technical problems, the technical solution adopted in the present invention is:A kind of hetero-junctions sun The silicon slice processing method of energy battery, the treating method comprises following steps:Silicon chip is carried out to go damage Processing;Will go damage handle after silicon chip made annealing treatment, induction metal impurities and crystal defect to Surface displacement is in silicon chip formation clean area;Two sides making herbs into wool processing, shape are carried out to the silicon chip after annealing Into pyramid matte;Chemical cleaning is carried out to the silicon chip after making herbs into wool, chemical oxide layer is removed and surface is residual It is remaining, and it is passivated silicon chip surface;Silicon chip after cleaning is subjected to double annealing processing, silicon is promoted by hydrogen Oxygen is extended out in piece, allows silicon chip surface to form Fu Yang areas.
Further, the annealing is to be carried out in the air of 1 standard atmospheric pressure, annealing temperature Spend for 350 DEG C~1000 DEG C, annealing time is 0.5-1h.
Further, the making herbs into wool is processed as silicon chip being put into mass ratio containing potassium hydroxide for 1-5%, adds Plus agent volume ratio is in 0.5-3% mixed solution, temperature is progress at 70-90 DEG C, the making herbs into wool time is 20-40 minutes.
Further, the step carries out going damage to be processed as to silicon chip:Silicon chip is put into solubility is 10-30% potassium hydroxide solution, reaction temperature gets rid of table to react 15-45min in 70 DEG C -90 DEG C The mechanical damage layer in face.
Further, the step carries out Chemical cleaning to the silicon chip after making herbs into wool, removes chemical oxide layer And surface residual, and be passivated silicon chip surface and be:First with nitric acid and the mixed liquid dipping of hydrofluoric acid, then Hydrofluoric acid clean is carried out, then carries out the oxidation neutralization of ammoniacal liquor and hydrogen peroxide, finally with the passivation of hydrofluoric acid Hydrophobic, the oxidation neutral temperature of the ammoniacal liquor and hydrogen peroxide is 70-90 DEG C, and scavenging period is 10-20min.
Further, the double annealing is processed as carrying out in the high temperature of high-purity hydrogen, annealing temperature For 350 DEG C~1000 DEG C, annealing pressure is 50-300pa, and annealing time is 0.5-1h.
From the above-mentioned description to structure of the present invention, compared to the prior art, the present invention has as follows Advantage:A kind of silicon slice processing method of heterojunction solar battery of the present invention, using with corrosive Solution corrodes to silicon chip surface, gets rid of after the mechanical damage layer on surface, is put into atmospheric air Short annealing is handled, and induces metal impurities and crystal defect to surface displacement formation clean area, Ran Houhua It is placed again into after the cleaning of length of schooling suede in the high-temperature annealing furnace of high-purity hydrogen, promotes Oxygen in silicon to extend out using hydrogen, So that one Ceng Fuyang areas of silicon chip surface formation, effectively eliminate metal impurities and the improvement of silicon chip surface Oxygen content.The solar battery process temperature that is made of Method of processing a substrate of the present invention is low, conversion Efficiency high, good temp characteristic.
Brief description of the drawings
The accompanying drawing for constituting the part of the application is used for providing a further understanding of the present invention, the present invention Schematic description and description be used for explain the present invention, do not constitute inappropriate limitation of the present invention. In the accompanying drawings:
Fig. 1 is a kind of flow chart of the silicon slice processing method of heterojunction solar battery of the invention;
Fig. 2 is the structural representation formed after silicon chip of the present invention is handled behind Fu Yang areas.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with accompanying drawing And embodiment, the present invention will be described in further detail.It should be appreciated that described herein specific Embodiment only to explain the present invention, is not intended to limit the present invention.
Embodiment
A kind of silicon slice processing method of heterojunction solar battery as shown in Figure 1, comprises the following steps:
Step S01, to silicon chip carry out go damage to handle, damage be processed as silicon chip being put into solubility be 10-30% potassium hydroxide solution, reaction temperature be 70 DEG C -90 DEG C in react 15-45min;The silicon chip Any one in N-type non-crystalline silicon or P-type non-crystalline silicon;
Step S02, the silicon chip that will be gone after damage processing make annealing treatment in atmospheric air high temperature, and annealing is warm Spend for 350 DEG C~1000 DEG C, annealing time is 0.5-1h, induce metal impurities and crystal defect to surface Displacement is in silicon chip formation clean area;
Step S03, making herbs into wool processing is carried out to the silicon chip after annealing, the making herbs into wool is processed as silicon chip Mass ratio containing potassium hydroxide is put into for 1-5%, additive volume ratio is in 0.5-3% mixed solution, temperature Spend at 70-90 DEG C, to carry out the making herbs into wool of 20-40 minutes, form the matte of " pyramid " shape;
Step S04, to after making herbs into wool silicon chip carry out Chemical cleaning, except chemical oxide layer and surface residual, And silicon chip surface is passivated, the step is:First with nitric acid and the mixed liquid dipping of hydrofluoric acid, then carry out Hydrofluoric acid clean, then the oxidation neutralization of ammoniacal liquor and hydrogen peroxide is carried out, it is finally hydrophobic with the passivation of hydrofluoric acid, The oxidation neutral temperature of the ammoniacal liquor and hydrogen peroxide is 70-90 DEG C, and scavenging period is 10-20min.
Step S05, the silicon chip after Chemical cleaning is put into high-purity hydrogen high temperature carried out at double annealing Reason, allows silicon chip surface formation Fu Yang areas as shown in Fig. 2 the annealing pressure of double annealing processing is 50-300pa, 350 DEG C~1000 DEG C of annealing temperature, annealing time is 0.5-1h, the negative oxygen sector width For 30-50um.
The present invention gets rid of the machine on surface using having corrosive solution to corrode silicon chip surface After tool damage layer, be put into atmospheric air short annealing and handle, induce metal impurities and crystal defect to Surface displacement formation clean area, is then placed again into the high annealing of high-purity hydrogen after chemical making herbs into wool cleaning In stove, promote Oxygen in silicon to extend out using hydrogen so that one Ceng Fuyang areas of silicon chip surface formation, effectively go Except silicon chip surface metal impurities and improve oxygen content.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, it is all Any modifications, equivalent substitutions and improvements made within the spirit and principles in the present invention etc., all should be included Within protection scope of the present invention.

Claims (6)

1. a kind of silicon slice processing method of heterojunction solar battery, it is characterised in that:The processing method bag Include following steps:
Silicon chip is carried out to go damage to handle;
Silicon chip after going damage to handle is made annealing treatment, metal impurities and crystal defect is induced to table Face displacement is in silicon chip formation clean area;
Two sides making herbs into wool processing is carried out to the silicon chip after annealing, pyramid matte is formed;
Chemical cleaning is carried out to the silicon chip after making herbs into wool, chemical oxide layer and surface residual is removed, and be passivated Silicon chip surface;
Silicon chip after cleaning is subjected to double annealing processing, promotes oxygen in silicon chip to extend out by hydrogen, allows silicon Piece surface forms Fu Yang areas.
2. a kind of silicon slice processing method of heterojunction solar battery according to claim 1, its feature It is:The annealing is 1 atmosphere air high temperature annealing, 350 DEG C of annealing temperature ~1000 DEG C, annealing time is 0.5-1h.
3. a kind of silicon slice processing method of heterojunction solar battery according to claim 1, its feature It is:The making herbs into wool is processed as silicon chip being put into mass ratio containing potassium hydroxide for 1-5%, additive volume Than in the mixed solution for 0.5-3%, temperature is progress at 70-90 DEG C, the making herbs into wool time is 20-40 minutes.
4. a kind of silicon slice processing method of heterojunction solar battery according to claim 1, its feature It is:The step carries out going damage to be processed as to silicon chip:Silicon chip is put into the hydrogen that solubility is 10-30% Potassium oxide solution, reaction temperature gets rid of the machinery damage on surface to react 15-45min in 70 DEG C -90 DEG C Hinder layer.
5. a kind of silicon slice processing method of heterojunction solar battery according to claim 1, its feature It is:The step carries out Chemical cleaning to the silicon chip after making herbs into wool, removes chemical oxide layer and surface is residual It is remaining, and be passivated silicon chip surface and be:First with nitric acid and the mixed liquid dipping of hydrofluoric acid, hydrogen fluorine is then carried out Acid cleaning, then carry out the oxidation neutralization of ammoniacal liquor and hydrogen peroxide, finally hydrophobic with the passivation of hydrofluoric acid, institute The oxidation neutral temperature for stating ammoniacal liquor and hydrogen peroxide is 70-90 DEG C, and scavenging period is 10-20min.
6. a kind of silicon slice processing method of heterojunction solar battery according to claim 1, its feature It is:The double annealing is processed as carrying out in the high temperature of high-purity hydrogen, and annealing pressure is 50-300pa, Annealing temperature is 350 DEG C~1000 DEG C, and annealing time is 0.5-1h.
CN201610150143.XA 2016-03-16 2016-03-16 A kind of silicon slice processing method of heterojunction solar battery Pending CN107204388A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107737917A (en) * 2017-09-27 2018-02-27 西安理工大学 A kind of preparation method of sheet suede structure magnetic microwave absorption
CN111725131A (en) * 2019-03-20 2020-09-29 株式会社斯库林集团 Substrate processing method and substrate processing apparatus
CN113061991A (en) * 2021-03-23 2021-07-02 韩华新能源(启东)有限公司 Preparation method for improving pyramid texture surface uniformity of monocrystalline silicon wafer and solar cell
CN114759117A (en) * 2022-03-24 2022-07-15 山西潞安太阳能科技有限责任公司 Method for improving texturing uniformity of crystalline silicon battery

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110220201A1 (en) * 2008-11-07 2011-09-15 Sunpreme, Ltd. Low-cost multi-junction solar cells and methods for their production
CN102820378A (en) * 2012-08-27 2012-12-12 晶澳(扬州)太阳能科技有限公司 Gettering method for prolonging effective service life of crystalline silicon substrate
CN105118898A (en) * 2015-09-23 2015-12-02 中利腾晖光伏科技有限公司 Silicon chip surface passivation method and manufacturing method of N type double-face cell based thereon
CN105226135A (en) * 2015-10-14 2016-01-06 新奥光伏能源有限公司 A kind of silicon heterogenous solar cell and preparation method thereof
CN105304765A (en) * 2015-11-13 2016-02-03 新奥光伏能源有限公司 Silicon heterojunction solar cell and manufacturing method therefor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110220201A1 (en) * 2008-11-07 2011-09-15 Sunpreme, Ltd. Low-cost multi-junction solar cells and methods for their production
CN102820378A (en) * 2012-08-27 2012-12-12 晶澳(扬州)太阳能科技有限公司 Gettering method for prolonging effective service life of crystalline silicon substrate
CN105118898A (en) * 2015-09-23 2015-12-02 中利腾晖光伏科技有限公司 Silicon chip surface passivation method and manufacturing method of N type double-face cell based thereon
CN105226135A (en) * 2015-10-14 2016-01-06 新奥光伏能源有限公司 A kind of silicon heterogenous solar cell and preparation method thereof
CN105304765A (en) * 2015-11-13 2016-02-03 新奥光伏能源有限公司 Silicon heterojunction solar cell and manufacturing method therefor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107737917A (en) * 2017-09-27 2018-02-27 西安理工大学 A kind of preparation method of sheet suede structure magnetic microwave absorption
CN107737917B (en) * 2017-09-27 2019-08-16 西安理工大学 A kind of preparation method of sheet suede structure magnetism microwave absorption
CN111725131A (en) * 2019-03-20 2020-09-29 株式会社斯库林集团 Substrate processing method and substrate processing apparatus
CN113061991A (en) * 2021-03-23 2021-07-02 韩华新能源(启东)有限公司 Preparation method for improving pyramid texture surface uniformity of monocrystalline silicon wafer and solar cell
CN114759117A (en) * 2022-03-24 2022-07-15 山西潞安太阳能科技有限责任公司 Method for improving texturing uniformity of crystalline silicon battery

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