CN107204388A - A kind of silicon slice processing method of heterojunction solar battery - Google Patents
A kind of silicon slice processing method of heterojunction solar battery Download PDFInfo
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- CN107204388A CN107204388A CN201610150143.XA CN201610150143A CN107204388A CN 107204388 A CN107204388 A CN 107204388A CN 201610150143 A CN201610150143 A CN 201610150143A CN 107204388 A CN107204388 A CN 107204388A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 82
- 239000010703 silicon Substances 0.000 title claims abstract description 82
- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 38
- 239000000126 substance Substances 0.000 claims abstract description 20
- 235000008216 herbs Nutrition 0.000 claims abstract description 17
- 210000002268 wool Anatomy 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 230000007547 defect Effects 0.000 claims abstract description 8
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 238000006073 displacement reaction Methods 0.000 claims abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 11
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 238000006386 neutralization reaction Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 230000002000 scavenging effect Effects 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims 1
- 229910001950 potassium oxide Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of silicon slice processing method of heterojunction solar battery, comprise the following steps：First silicon chip is carried out to go damage to handle；Silicon chip is made annealing treatment again, metal impurities and crystal defect is induced to surface displacement in silicon chip formation clean area；Then allow silicon chip to carry out two sides making herbs into wool processing, form pyramid matte；Chemical cleaning is carried out again, removes chemical oxide layer and surface residual, and be passivated silicon chip surface；Silicon chip is finally subjected to double annealing processing, promotes oxygen in silicon chip to extend out by hydrogen, allows silicon chip surface to form Fu Yang areas.The present invention is corroded using corrosive solution to silicon chip surface, get rid of after the mechanical damage layer on surface, it is put into short annealing in atmospheric air, metal impurities and crystal defect are induced to surface displacement formation clean area, then it is placed again into double annealing in high-purity hydrogen after chemical making herbs into wool and cleaning, promote Oxygen in silicon to extend out using hydrogen so that silicon chip surface formation Fu Yang areas, effectively eliminate the metal impurities of silicon chip surface and improve oxygen content.
Description
Technical field
The present invention relates to area of solar cell, more particularly to a kind of silicon chip of heterojunction solar battery
Processing method.
Background technology
TheCourse of PV Industry is rapid under energy crisis, and the key of further genralrlization photovoltaic application is to improve electricity
Pond photoelectric transformation efficiency, reduces battery cost.Heterojunction solar battery is Si Grown amorphous
The hetero-junction solar cell of Si thin layers, with simple in construction, technological temperature is low, high conversion efficiency, temperature is special
Property it is good the characteristics of, one of high-efficiency battery of large-scale promotion application is suitable for, with good development
Prospect.
Monocrystalline silicon heterojunction solar cell is generally using n-type Si as substrate, typical structure such as Fig. 1
It is shown, the intrinsic amorphous Si layer of priority stringer and p-type amorphous Si on n-type Si substrate smooth surfaces
Layer forms emitter stage；Back surface field is formed by thin intrinsic amorphous Si layer and n-type amorphous Si layer in another side；
With the method deposition transparent conductive oxide film of magnetron sputtering on the amorphous Si thin layers of two sides doping, most
Afterwards metal electrode of the grating is formed in battery top and bottom.Prepare before efficient heterojunction solar battery
It is that requirement monocrystalline silicon silicon chip substrate fault in material and impurity are few to carry, and surface cleanliness is high, can so subtract
Few recombination probability of the carrier in transport process, it is real so as to improve short circuit current flow and open-circuit voltage
Now higher photoelectric transformation efficiency.
The surface treatment of silicon chip of solar cell is realized by multiple tracks wet chemical technology, be first for
Silicon chip surface mechanical damage layer caused by wire cutting is removed, silicon chip surface is then reduced by pickling
Metallic particles, finally removal surface chemical oxide layer and surface liquor residue caused by chemical treatment.
But the simple top layer that can only handle silicon chip with the mode of wet-chemical effectively can not remove or reduce silicon chip
Interior metal impurity.
The content of the invention
In view of the above-mentioned problems, the invention provides a kind of silicon slice processing method of heterojunction solar battery
And its preparation technology, solve because prior art can only handle merely silicon chip by the way of wet-chemical
Top layer effectively can not remove or reduce the defect of silicon chip interior metal impurity.
In order to solve the above technical problems, the technical solution adopted in the present invention is：A kind of hetero-junctions sun
The silicon slice processing method of energy battery, the treating method comprises following steps：Silicon chip is carried out to go damage
Processing；Will go damage handle after silicon chip made annealing treatment, induction metal impurities and crystal defect to
Surface displacement is in silicon chip formation clean area；Two sides making herbs into wool processing, shape are carried out to the silicon chip after annealing
Into pyramid matte；Chemical cleaning is carried out to the silicon chip after making herbs into wool, chemical oxide layer is removed and surface is residual
It is remaining, and it is passivated silicon chip surface；Silicon chip after cleaning is subjected to double annealing processing, silicon is promoted by hydrogen
Oxygen is extended out in piece, allows silicon chip surface to form Fu Yang areas.
Further, the annealing is to be carried out in the air of 1 standard atmospheric pressure, annealing temperature
Spend for 350 DEG C~1000 DEG C, annealing time is 0.5-1h.
Further, the making herbs into wool is processed as silicon chip being put into mass ratio containing potassium hydroxide for 1-5%, adds
Plus agent volume ratio is in 0.5-3% mixed solution, temperature is progress at 70-90 DEG C, the making herbs into wool time is
20-40 minutes.
Further, the step carries out going damage to be processed as to silicon chip：Silicon chip is put into solubility is
10-30% potassium hydroxide solution, reaction temperature gets rid of table to react 15-45min in 70 DEG C -90 DEG C
The mechanical damage layer in face.
Further, the step carries out Chemical cleaning to the silicon chip after making herbs into wool, removes chemical oxide layer
And surface residual, and be passivated silicon chip surface and be：First with nitric acid and the mixed liquid dipping of hydrofluoric acid, then
Hydrofluoric acid clean is carried out, then carries out the oxidation neutralization of ammoniacal liquor and hydrogen peroxide, finally with the passivation of hydrofluoric acid
Hydrophobic, the oxidation neutral temperature of the ammoniacal liquor and hydrogen peroxide is 70-90 DEG C, and scavenging period is 10-20min.
Further, the double annealing is processed as carrying out in the high temperature of high-purity hydrogen, annealing temperature
For 350 DEG C~1000 DEG C, annealing pressure is 50-300pa, and annealing time is 0.5-1h.
From the above-mentioned description to structure of the present invention, compared to the prior art, the present invention has as follows
Advantage：A kind of silicon slice processing method of heterojunction solar battery of the present invention, using with corrosive
Solution corrodes to silicon chip surface, gets rid of after the mechanical damage layer on surface, is put into atmospheric air
Short annealing is handled, and induces metal impurities and crystal defect to surface displacement formation clean area, Ran Houhua
It is placed again into after the cleaning of length of schooling suede in the high-temperature annealing furnace of high-purity hydrogen, promotes Oxygen in silicon to extend out using hydrogen,
So that one Ceng Fuyang areas of silicon chip surface formation, effectively eliminate metal impurities and the improvement of silicon chip surface
Oxygen content.The solar battery process temperature that is made of Method of processing a substrate of the present invention is low, conversion
Efficiency high, good temp characteristic.
Brief description of the drawings
The accompanying drawing for constituting the part of the application is used for providing a further understanding of the present invention, the present invention
Schematic description and description be used for explain the present invention, do not constitute inappropriate limitation of the present invention.
In the accompanying drawings：
Fig. 1 is a kind of flow chart of the silicon slice processing method of heterojunction solar battery of the invention；
Fig. 2 is the structural representation formed after silicon chip of the present invention is handled behind Fu Yang areas.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with accompanying drawing
And embodiment, the present invention will be described in further detail.It should be appreciated that described herein specific
Embodiment only to explain the present invention, is not intended to limit the present invention.
Embodiment
A kind of silicon slice processing method of heterojunction solar battery as shown in Figure 1, comprises the following steps：
Step S01, to silicon chip carry out go damage to handle, damage be processed as silicon chip being put into solubility be
10-30% potassium hydroxide solution, reaction temperature be 70 DEG C -90 DEG C in react 15-45min；The silicon chip
Any one in N-type non-crystalline silicon or P-type non-crystalline silicon；
Step S02, the silicon chip that will be gone after damage processing make annealing treatment in atmospheric air high temperature, and annealing is warm
Spend for 350 DEG C~1000 DEG C, annealing time is 0.5-1h, induce metal impurities and crystal defect to surface
Displacement is in silicon chip formation clean area；
Step S03, making herbs into wool processing is carried out to the silicon chip after annealing, the making herbs into wool is processed as silicon chip
Mass ratio containing potassium hydroxide is put into for 1-5%, additive volume ratio is in 0.5-3% mixed solution, temperature
Spend at 70-90 DEG C, to carry out the making herbs into wool of 20-40 minutes, form the matte of " pyramid " shape；
Step S04, to after making herbs into wool silicon chip carry out Chemical cleaning, except chemical oxide layer and surface residual,
And silicon chip surface is passivated, the step is：First with nitric acid and the mixed liquid dipping of hydrofluoric acid, then carry out
Hydrofluoric acid clean, then the oxidation neutralization of ammoniacal liquor and hydrogen peroxide is carried out, it is finally hydrophobic with the passivation of hydrofluoric acid,
The oxidation neutral temperature of the ammoniacal liquor and hydrogen peroxide is 70-90 DEG C, and scavenging period is 10-20min.
Step S05, the silicon chip after Chemical cleaning is put into high-purity hydrogen high temperature carried out at double annealing
Reason, allows silicon chip surface formation Fu Yang areas as shown in Fig. 2 the annealing pressure of double annealing processing is
50-300pa, 350 DEG C~1000 DEG C of annealing temperature, annealing time is 0.5-1h, the negative oxygen sector width
For 30-50um.
The present invention gets rid of the machine on surface using having corrosive solution to corrode silicon chip surface
After tool damage layer, be put into atmospheric air short annealing and handle, induce metal impurities and crystal defect to
Surface displacement formation clean area, is then placed again into the high annealing of high-purity hydrogen after chemical making herbs into wool cleaning
In stove, promote Oxygen in silicon to extend out using hydrogen so that one Ceng Fuyang areas of silicon chip surface formation, effectively go
Except silicon chip surface metal impurities and improve oxygen content.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, it is all
Any modifications, equivalent substitutions and improvements made within the spirit and principles in the present invention etc., all should be included
Within protection scope of the present invention.
Claims (6)
1. a kind of silicon slice processing method of heterojunction solar battery, it is characterised in that：The processing method bag
Include following steps：
Silicon chip is carried out to go damage to handle；
Silicon chip after going damage to handle is made annealing treatment, metal impurities and crystal defect is induced to table
Face displacement is in silicon chip formation clean area；
Two sides making herbs into wool processing is carried out to the silicon chip after annealing, pyramid matte is formed；
Chemical cleaning is carried out to the silicon chip after making herbs into wool, chemical oxide layer and surface residual is removed, and be passivated
Silicon chip surface；
Silicon chip after cleaning is subjected to double annealing processing, promotes oxygen in silicon chip to extend out by hydrogen, allows silicon
Piece surface forms Fu Yang areas.
2. a kind of silicon slice processing method of heterojunction solar battery according to claim 1, its feature
It is：The annealing is 1 atmosphere air high temperature annealing, 350 DEG C of annealing temperature
~1000 DEG C, annealing time is 0.5-1h.
3. a kind of silicon slice processing method of heterojunction solar battery according to claim 1, its feature
It is：The making herbs into wool is processed as silicon chip being put into mass ratio containing potassium hydroxide for 1-5%, additive volume
Than in the mixed solution for 0.5-3%, temperature is progress at 70-90 DEG C, the making herbs into wool time is 20-40 minutes.
4. a kind of silicon slice processing method of heterojunction solar battery according to claim 1, its feature
It is：The step carries out going damage to be processed as to silicon chip：Silicon chip is put into the hydrogen that solubility is 10-30%
Potassium oxide solution, reaction temperature gets rid of the machinery damage on surface to react 15-45min in 70 DEG C -90 DEG C
Hinder layer.
5. a kind of silicon slice processing method of heterojunction solar battery according to claim 1, its feature
It is：The step carries out Chemical cleaning to the silicon chip after making herbs into wool, removes chemical oxide layer and surface is residual
It is remaining, and be passivated silicon chip surface and be：First with nitric acid and the mixed liquid dipping of hydrofluoric acid, hydrogen fluorine is then carried out
Acid cleaning, then carry out the oxidation neutralization of ammoniacal liquor and hydrogen peroxide, finally hydrophobic with the passivation of hydrofluoric acid, institute
The oxidation neutral temperature for stating ammoniacal liquor and hydrogen peroxide is 70-90 DEG C, and scavenging period is 10-20min.
6. a kind of silicon slice processing method of heterojunction solar battery according to claim 1, its feature
It is：The double annealing is processed as carrying out in the high temperature of high-purity hydrogen, and annealing pressure is 50-300pa,
Annealing temperature is 350 DEG C~1000 DEG C, and annealing time is 0.5-1h.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610150143.XA CN107204388A (en) | 2016-03-16 | 2016-03-16 | A kind of silicon slice processing method of heterojunction solar battery |
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| CN201610150143.XA CN107204388A (en) | 2016-03-16 | 2016-03-16 | A kind of silicon slice processing method of heterojunction solar battery |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107737917A (en) * | 2017-09-27 | 2018-02-27 | 西安理工大学 | A kind of preparation method of sheet suede structure magnetic microwave absorption |
| CN111725131A (en) * | 2019-03-20 | 2020-09-29 | 株式会社斯库林集团 | Substrate processing method and substrate processing apparatus |
| CN113061991A (en) * | 2021-03-23 | 2021-07-02 | 韩华新能源（启东）有限公司 | Preparation method for improving pyramid texture surface uniformity of monocrystalline silicon wafer and solar cell |
| CN114759117A (en) * | 2022-03-24 | 2022-07-15 | 山西潞安太阳能科技有限责任公司 | Method for improving texturing uniformity of crystalline silicon battery |
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| US20110220201A1 (en) * | 2008-11-07 | 2011-09-15 | Sunpreme, Ltd. | Low-cost multi-junction solar cells and methods for their production |
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| CN107737917A (en) * | 2017-09-27 | 2018-02-27 | 西安理工大学 | A kind of preparation method of sheet suede structure magnetic microwave absorption |
| CN107737917B (en) * | 2017-09-27 | 2019-08-16 | 西安理工大学 | A kind of preparation method of sheet suede structure magnetism microwave absorption |
| CN111725131A (en) * | 2019-03-20 | 2020-09-29 | 株式会社斯库林集团 | Substrate processing method and substrate processing apparatus |
| CN113061991A (en) * | 2021-03-23 | 2021-07-02 | 韩华新能源（启东）有限公司 | Preparation method for improving pyramid texture surface uniformity of monocrystalline silicon wafer and solar cell |
| CN114759117A (en) * | 2022-03-24 | 2022-07-15 | 山西潞安太阳能科技有限责任公司 | Method for improving texturing uniformity of crystalline silicon battery |
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