CN107204287B - A kind of lithographic method and array substrate manufacturing method - Google Patents
A kind of lithographic method and array substrate manufacturing method Download PDFInfo
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- CN107204287B CN107204287B CN201710380536.4A CN201710380536A CN107204287B CN 107204287 B CN107204287 B CN 107204287B CN 201710380536 A CN201710380536 A CN 201710380536A CN 107204287 B CN107204287 B CN 107204287B
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 113
- 229910018503 SF6 Inorganic materials 0.000 claims description 29
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 29
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 claims 2
- 230000003628 erosive effect Effects 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- -1 O2 and He Chemical compound 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mathematical Physics (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A kind of lithographic method and array substrate manufacturing method.The lithographic method be applied to successively include first layer, the second layer, third layer substrate, it include: after the third layer forms the via pattern exposure second layer, it is less than using the etching rate to the third layer and first time etching is carried out to the substrate to the first lithographic method of the etching rate of the second layer, and the thickness that the second layer is etched away is less than the original depth of the second layer；After first time etching, it is greater than using the etching rate to the third layer and the first layer is etched to expose out for the second time to the substrate to the second lithographic method of the etching rate of the second layer.Scheme provided by the present application can promote production capacity and yield.
Description
Technical field
The present invention relates to display technology, espespecially a kind of lithographic method and array substrate manufacturing method.
Background technique
Organic film has high light transmission rate, and can be realized product surface planarization.With liquid crystal display
(Liquid Crystal Display, abbreviation LCD) panel PPI (Pixels Per Inch, pixel density) is improved, organic film
It is more and more to be applied in product.
After completing organic film exposure mask, etching vias is needed to connect lower metal.Current scheme is increased on organic film
It is performed etching after adding via hole exposure mask (VIA mask).
Summary of the invention
A present invention at least embodiment provides a kind of lithographic method and array substrate manufacturing method.
A present invention at least embodiment provides a kind of lithographic method, is applied to successively include first layer, the second layer, third
The substrate of layer, comprising:
After the third layer forms the via pattern exposure second layer, it is less than using the etching rate to the third layer
First time etching is carried out to the substrate to the first lithographic method of the etching rate of the second layer, and makes the second layer quilt
The thickness etched away is less than the second layer and carries out the original depth before the first time etching；
After first time etching, it is greater than using the etching rate to the third layer to the etching rate of the second layer
Second lithographic method is etched to expose out the first layer to the substrate for the second time.
In an alternative embodiment of the invention, original depth root of the third layer before carrying out the first time etching
After the completion of the thickness lost in the first time etches and second etches according to the third layer and second of etching
The target thickness of the third layer determines.
In an alternative embodiment of the invention, the second layer the first time etch in etch away with a thickness of institute
State the 30%~80% of the original depth of the second layer.
In an alternative embodiment of the invention, first lithographic method includes: using including sulfur hexafluoride, oxygen
Gas performs etching, and the flow of the sulfur hexafluoride is more than or equal to the flow of the oxygen.
In an alternative embodiment of the invention, second lithographic method includes: using including sulfur hexafluoride, oxygen
Gas performs etching, and the flow of the sulfur hexafluoride is less than the flow of the oxygen.
In an alternative embodiment of the invention, the third layer is organic film.
In an alternative embodiment of the invention, the first layer is metal layer, and the second layer is non-metallic layer.
A present invention at least embodiment provides a kind of array substrate manufacturing method, comprising:
Underlay substrate is provided；
Metal layer, non-metallic layer and organic film, and the thickness of the organic film are sequentially formed on the underlay substrate
Degree is greater than the target thickness of the organic film after the array substrate completes；
Technique is patterned to the organic film and forms via pattern with the exposure non-metallic layer；
Using the etching rate to the organic film be less than to the first lithographic method of the etching rate of the non-metallic layer into
Row etches for the first time, and the thickness that the non-metallic layer is etched away is less than the non-metallic layer and is carrying out the first time
Original depth before etching；
After first time etching, it is greater than the etching to the non-metallic layer using the etching rate to the organic film
Second lithographic method of rate is etched to expose out the metal layer for the second time.
In an alternative embodiment of the invention, the non-metallic layer the first time etch in etch away with a thickness of
The 30%~80% of the original depth of the non-metallic layer.
In an alternative embodiment of the invention, first lithographic method includes: using including sulfur hexafluoride, oxygen
Gas performs etching, and the flow of the sulfur hexafluoride is more than or equal to the flow of the oxygen；
Second lithographic method includes: to be performed etching using the gas for including sulfur hexafluoride, oxygen, and described lithium
The flow of sulphur is less than the flow of the oxygen.
Compared with prior art, it uses organic film as exposure mask in section Example of the present invention, reduces used
Mask plate, in addition, the etching different by twice etching rate, avoids and carve.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention can be by specification, right
Specifically noted structure is achieved and obtained in claim and attached drawing.
Detailed description of the invention
Attached drawing is used to provide to further understand technical solution of the present invention, and constitutes part of specification, with this
The embodiment of application technical solution for explaining the present invention together, does not constitute the limitation to technical solution of the present invention.
Fig. 1 is the etching vias schematic diagram that one embodiment of the invention provides；
Fig. 2 is the lithographic method flow chart that one embodiment of the invention provides；
Fig. 3 be another embodiment of the present invention provides array substrate manufacturing method flow chart；
Fig. 4 (a)~Fig. 4 (c) is the array substrate manufacturing process schematic diagram that one embodiment of the invention provides.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention
Embodiment be described in detail.It should be noted that in the absence of conflict, in the embodiment and embodiment in the application
Feature can mutual any combination.
Step shown in the flowchart of the accompanying drawings can be in a computer system such as a set of computer executable instructions
It executes.Also, although logical order is shown in flow charts, and it in some cases, can be to be different from herein suitable
Sequence executes shown or described step.
Unless otherwise defined, the technical term or scientific term that the disclosure uses should be tool in fields of the present invention
The ordinary meaning for thering is the personage of general technical ability to be understood." first ", " second " used in the disclosure and similar word are simultaneously
Any sequence, quantity or importance are not indicated, and are used only to distinguish different component parts." comprising " or "comprising" etc.
Similar word means that the element or object before the word occur covers the element or object for appearing in the word presented hereinafter
And its it is equivalent, and it is not excluded for other elements or object.The similar word such as " connection " or " connected " is not limited to physics
Or mechanical connection, but may include electrical connection, it is either direct or indirectly."upper", "lower",
"left", "right" etc. is only used for indicating relative positional relationship, and after the absolute position for being described object changes, then the relative position is closed
System may also correspondingly change.
Since organic membrane property is similar to photoresist, it can directly be performed etching using organic film as exposure mask.Such as
Shown in Fig. 1, array substrate includes underlay substrate 1, and the metal layer 2, the non-metallic layer 3 and organic that are arranged on underlay substrate 1
Film layer 4, when directly organic film 4 being used to perform etching as exposure mask, it may appear that shown in FIG. 1 to carve problem.In order to solve to bore
Quarter problem, the method for carrying out twice etching is used in the application and is performed etching, wherein once big to the etching rate of non-metallic layer
In the etching rate to organic film, another etching rate to organic film is greater than the etching rate to non-metallic layer, to avoid
It carves.The application is further illustrated below by specific embodiment.
Embodiment one
As shown in Fig. 2, being applied to successively include first layer, the second layer, third layer the present embodiment provides a kind of lithographic method
Substrate, comprising:
Step 201, after the third layer forms the via pattern exposure second layer, the quarter to the third layer is used
Erosion rate, which is less than, carries out first time etching to the substrate to the first lithographic method of the etching rate of the second layer, and makes described
The thickness that the second layer is etched away is less than the original depth for carrying out the preceding second layer of first time etching；
Wherein, the thickness of the second layer before the original depth fingering row of the second layer etches for the first time.
Step 202, after first time etching, it is greater than using the etching rate to the third layer to the second layer
Second lithographic method of etching rate is etched to expose out the first layer to the substrate for the second time.
In an alternative embodiment of the invention, original depth root of the third layer before carrying out the first time etching
After the completion of the thickness lost in the first time etches and second etches according to the third layer and second of etching
The target thickness of the third layer determines.Due to using third layer as exposure mask, third layer can be etched away in etching process
Part, therefore, the original depth of third layer need bigger than final target thickness.The thickness specifically having more is according to etching process
The thickness of middle loss determines.The original depth of third layer is determined after being tested in actual use.
In an alternative embodiment of the invention, the second layer the first time etch in etch away with a thickness of institute
State the 30%~80% of the original depth of the second layer.Certainly, merely illustrative herein, what the second layer etched away in first time etching
Thickness is also possible to other ratios.
In the present embodiment, dry etching is used.The gas containing sulfur hexafluoride (SF6), oxygen (O2) can be used to be carved
Erosion.It is of course also possible to include helium (He).
Optionally, first lithographic method is included: and is performed etching using the gas including SF6, O2, and the SF6
Flow is more than or equal to the flow of the O2.The specific flow of SF6 and O2 can according to need the thickness of etching, the material etched
Characteristic etc. is determined by test.It should be noted that it is merely illustrative herein, other can be used and makes the quarter to the third layer
Erosion rate, which is less than, performs etching the lithographic method of the etching rate of the second layer.
For example, second lithographic method includes: to perform etching using including the gas of SF6, O2, and the stream of the SF6
Amount is less than the flow of the O2.The specific flow of SF6 and O2 can according to need the thickness of etching, the material property etched etc.
It is determined by test.It should be noted that it is merely illustrative herein, other can be used and makes the etching rate to the third layer big
It is performed etching in the lithographic method of the etching rate to the second layer.
For example, the third layer is organic film.The organic film such as can be acrylic.
For example, the first layer is metal layer, such as molybdenum (Mo), copper (Cu), silver (Ag), titanium (Ti), lead (Pb), indium
(In), molybdenum (Mo) aluminium (Al) alloy, molybdenum (Mo) neodymium (Nd) alloy etc.；The second layer is non-metallic layer, such as the nitridation for silicon
Object, the oxide of silicon, nitrogen oxides of silicon etc..It should be noted that it is merely illustrative herein, it is also possible to other substances.
Certainly, this method can also be used for the etching of the substrate of other structures.
It should be noted that above layers are layer in logic, it physically may include multilayer.For example, the second layer
It physically may include multilayer for the second layer in logic.
It should be noted that in other embodiments of the present invention, it is possible to use etch more times, such as 3 times or more times
Etching, last time etching using to the etching rate of the third layer be greater than to the lithographic method of the etching rate of the second layer into
Row etching.
Lithographic method provided in this embodiment does not need additionally to increase via hole exposure mask, and will not generate non-metallic layer
Problem is carved, production capacity and yield are improved.
Embodiment two
The present embodiment provides a kind of array substrate manufacturing methods, as shown in Figure 3, comprising:
Step 301, underlay substrate is provided；
Step 302, metal layer, non-metallic layer and organic film are sequentially formed on the underlay substrate, and described organic
The thickness of film layer is greater than the target thickness of the organic film after the array substrate completes；
Step 303, technique is patterned to the organic film and forms the via pattern exposure non-metallic layer；
Step 304, the first quarter to the etching rate of the non-metallic layer is less than using the etching rate to the organic film
Before etching method carries out first time etching, and the thickness that the non-metallic layer is etched away is less than the progress first time etching
The original depth of the non-metallic layer；
Step 305, after first time etching, it is greater than using the etching rate to the organic film to described nonmetallic
Second lithographic method of the etching rate of layer is etched to expose out the metal layer for the second time.
For example, in step 304, the non-metallic layer etched away in the first time etches with a thickness of described nonmetallic
The 30%~80% of the original depth of layer.
For example, in step 304, first lithographic method includes: to be performed etching using the gas including SF6, O2, and institute
The flow for stating SF6 is more than or equal to the flow of the O2.It certainly, can also as needed include other gases, such as He.It needs to illustrate
, it is merely illustrative herein, other can be used and to be less than to the non-metallic layer etching rate of the organic film
The lithographic method of etching rate performs etching.
For example, in step 305, second lithographic method includes: to be performed etching using the gas including SF6, O2, and institute
The flow for stating SF6 is less than the flow of the O2.It certainly, can also as needed include other gases, such as He.It needs to illustrate
It is, it is merely illustrative herein, other can be used and to be greater than the etching rate of the organic film quarter to the non-metallic layer
The lithographic method of erosion rate performs etching.
The illustratively manufacturing process of array substrate by taking Fig. 4 (a)~Fig. 4 (c) as an example.Wherein, the production of array substrate
Dry etching is used in journey, uses reinforced cathode coupled plasma (Enhance Cathode Couple
Plasma, ECCP) type equipment.
As shown in Fig. 4 (a), metal layer 42, non-metallic layer 43 and organic film 44 are successively formed on underlay substrate 41, and
The thickness of organic film 44 is greater than the target thickness after array substrate completes, the thickness being higher by and via etch (VIA
Etch the thickness lost during) is suitable.Organic film is exposed, organic film via pattern is formed, exposes nonmetallic
Layer 43.
It is exemplary, the target thickness of organic film(angstrom), VIA etch lose thicknessTherefore organic
The coating thickness of film layer is
As shown in Fig. 4 (b), progress first time VIA etch, source 500~5000W of radio-frequency power, biasing radio-frequency power 0~
5000W, 50~200mTorr of pressure, using gas SF6, O2 and He, SF6 flow are not less than O2 flow, and wherein He is optional,
He can not used.The etching condition is less than to non-metallic layer etching rate the etching rate of organic film.The VIA etch is only carved
The segment thickness for losing non-metallic layer 43, does not expose following metal layer 42, optionally, the non-metallic layer thickness of etching accounts for overall thickness
30%~80%.First step VIA etch is higher to non-metallic layer etching rate, it is possible to reduce productive temp time；Etched portions
Thickness non-metallic layer is to reduce and carve depth.
As shown in Fig. 4 (c), progress second of VIA etch, source 500~5000W of radio-frequency power, biasing radio-frequency power 0~
5000W, 50~200mTorr of pressure, using gas SF6, O2, He, SF6 flow are lower than O2 flow, and wherein He is optional.The quarter
Erosion condition is greater than the etching rate to non-metallic layer to the etching rate of organic film, therefore after etching can be etched to organic film
Above non-metallic layer, elimination is carved.The purpose of second etching is to eliminate to carve, and guarantees that metal layer is completed etching.It can see
It arrives, takes this lithographic method, since the etching rate to organic film is greater than the etching rate to non-metallic layer, to organic film
Etching degree is greater than to non-metallic layer, therefore, does not carve.
There is the following to need to illustrate:
(1) attached drawing of the embodiment of the present invention is related only to the present embodiments relate to the structure arrived, and other structures can refer to
It is commonly designed.
(2) for clarity, in the attached drawing of embodiment for describing the present invention, the thickness in layer or region is amplified
Or reduce, i.e., these attached drawings are not drawn according to actual ratio.It is appreciated that ought such as layer, film, region or substrate etc
When element is referred to as being located at "above" or "below" another element, which " direct " can be located at "above" or "below" another element, or
Person may exist intermediary element.
(3) in the absence of conflict, the feature in the embodiment of the present invention and embodiment can be combined with each other to obtain
New embodiment.
Although disclosed herein embodiment it is as above, the content only for ease of understanding the present invention and use
Embodiment is not intended to limit the invention.Technical staff in any fields of the present invention is taken off not departing from the present invention
Under the premise of the spirit and scope of dew, any modification and variation, but the present invention can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of lithographic method, applied to successively include first layer, the second layer, third layer substrate characterized by comprising
After the third layer forms the via pattern exposure second layer, it is less than using the etching rate to the third layer to institute
The first lithographic method for stating the etching rate of the second layer carries out first time etching to the substrate, and the second layer is etched
The thickness fallen is less than the second layer and carries out the original depth before the first time etching；
After first time etching, it is greater than second to the etching rate of the second layer using the etching rate to the third layer
Lithographic method is etched to expose out the first layer to the substrate for the second time.
2. lithographic method as described in claim 1, which is characterized in that
Original depth of the third layer before carrying out the first time etching is etched according to the third layer in the first time
The target thickness of the third layer determines after the completion of etching with the thickness lost in second of etching and described second.
3. lithographic method as described in claim 1, which is characterized in that
The 30% of the original depth with a thickness of the second layer that the second layer etches away in the first time etches~
80%.
4. lithographic method as described in claim 1, which is characterized in that first lithographic method includes: using including hexafluoro
Change sulphur, oxygen gas perform etching, and the flow of the sulfur hexafluoride be more than or equal to the oxygen flow.
5. lithographic method as described in claim 1, which is characterized in that second lithographic method includes: using including hexafluoro
Change sulphur, oxygen gas perform etching, and the flow of the sulfur hexafluoride be less than the oxygen flow.
6. lithographic method as claimed in claim 1 to 5, which is characterized in that the third layer is organic film.
7. lithographic method as claimed in claim 1 to 5, which is characterized in that the first layer be metal layer, described second
Layer is non-metallic layer.
8. a kind of array substrate manufacturing method characterized by comprising
Underlay substrate is provided；
Metal layer, non-metallic layer and organic film are sequentially formed on the underlay substrate, and the thickness of the organic film is big
The target thickness of the organic film after the array substrate completes；
Technique is patterned to the organic film and forms via pattern with the exposure non-metallic layer；
It is less than using the etching rate to the organic film and the is carried out to the first lithographic method of the etching rate of the non-metallic layer
Primary etching, and the thickness that the non-metallic layer is etched away is less than the non-metallic layer and is carrying out the first time etching
Preceding original depth；
After first time etching, it is greater than using the etching rate to the organic film to the etching rate of the non-metallic layer
Second lithographic method is etched to expose out the metal layer for the second time.
9. array substrate manufacturing method as claimed in claim 8, which is characterized in that
The 30% of the original depth with a thickness of the non-metallic layer that the non-metallic layer etches away in the first time etches
~80%.
10. array substrate manufacturing method as claimed in claim 8, which is characterized in that
First lithographic method includes: to be performed etching using the gas for including sulfur hexafluoride, oxygen, and the sulfur hexafluoride
Flow is more than or equal to the flow of the oxygen；
Second lithographic method includes: to be performed etching using the gas for including sulfur hexafluoride, oxygen, and the sulfur hexafluoride
Flow is less than the flow of the oxygen.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1518093A (en) * | 2003-01-20 | 2004-08-04 | �����ɷ� | Semiconductor device and its manufacturing method |
| CN101140852A (en) * | 2006-09-07 | 2008-03-12 | 三星电子株式会社 | Method of forming a fine pattern |
| US8885683B2 (en) * | 2011-12-21 | 2014-11-11 | Canon Kabushiki Kaisha | Process for forming microstructure of nitride semiconductor, surface emitting laser using two-dimensional photonic crystal and production process thereof |
| CN104952932A (en) * | 2015-05-29 | 2015-09-30 | 合肥鑫晟光电科技有限公司 | Thin-film transistor, array substrate, manufacturing method of thin-film transistor, manufacturing method of array substrate, and display device |
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| US7012279B2 (en) * | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1518093A (en) * | 2003-01-20 | 2004-08-04 | �����ɷ� | Semiconductor device and its manufacturing method |
| CN101140852A (en) * | 2006-09-07 | 2008-03-12 | 三星电子株式会社 | Method of forming a fine pattern |
| US8885683B2 (en) * | 2011-12-21 | 2014-11-11 | Canon Kabushiki Kaisha | Process for forming microstructure of nitride semiconductor, surface emitting laser using two-dimensional photonic crystal and production process thereof |
| CN104952932A (en) * | 2015-05-29 | 2015-09-30 | 合肥鑫晟光电科技有限公司 | Thin-film transistor, array substrate, manufacturing method of thin-film transistor, manufacturing method of array substrate, and display device |
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