CN107204287A - A kind of lithographic method and array substrate manufacturing method - Google Patents
A kind of lithographic method and array substrate manufacturing method Download PDFInfo
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- CN107204287A CN107204287A CN201710380536.4A CN201710380536A CN107204287A CN 107204287 A CN107204287 A CN 107204287A CN 201710380536 A CN201710380536 A CN 201710380536A CN 107204287 A CN107204287 A CN 107204287A
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 99
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 229910018503 SF6 Inorganic materials 0.000 claims description 29
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 29
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 claims 2
- 230000003628 erosive effect Effects 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- -1 O2 and He Chemical compound 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mathematical Physics (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A kind of lithographic method and array substrate manufacturing method.The lithographic method is applied to include first layer, the second layer, the substrate of third layer successively, including：After third layer formation via pattern exposes the second layer, it is less than using the etching rate to the third layer and first time etching is carried out to the substrate to the first lithographic method of the etching rate of the second layer, and causes the thickness that the second layer is etched away less than the original depth of the second layer；After the first time etches, it is more than using the etching rate to the third layer and the first layer is etched to expose out for the second time to the substrate to the second lithographic method of the etching rate of the second layer.The scheme that the application is provided, can lift production capacity and yield.
Description
Technical field
The present invention relates to Display Technique, espespecially a kind of lithographic method and array substrate manufacturing method.
Background technology
Organic film has high light transmission rate, and can realize that product surface is planarized.With liquid crystal display
(Liquid Crystal Display, abbreviation LCD) panel PPI (Pixels Per Inch, picture element density) is improved, organic film
It is more and more to be applied in product.
Complete after organic film mask, it is necessary to which etching vias connects lower metal.Current scheme is increased on organic film
Plus performed etching after via mask (VIA mask).
The content of the invention
An at least embodiment of the invention provides a kind of lithographic method and array substrate manufacturing method.
An at least embodiment of the invention provides a kind of lithographic method, applied to successively including first layer, the second layer, the 3rd
The substrate of layer, including：
After third layer formation via pattern exposes the second layer, it is less than using the etching rate to the third layer
First time etching is carried out to the substrate to the first lithographic method of the etching rate of the second layer, and causes the second layer quilt
The thickness etched away is less than the second layer and carries out the original depth before the first time etching；
After the first time etches, it is more than using the etching rate to the third layer to the etching rate of the second layer
Second lithographic method is etched to expose out the first layer for the second time to the substrate.
In the alternative embodiment of the present invention, original depth root of the third layer before the first time etching is carried out
After the completion of the thickness lost in being etched with second is etched in the first time according to the third layer and is etched for described second
The target thickness of the third layer is determined.
In the alternative embodiment of the present invention, the thickness that the second layer is etched away in being etched in the first time is institute
State the 30%~80% of the original depth of the second layer.
In the alternative embodiment of the present invention, first lithographic method includes：Using including sulfur hexafluoride, oxygen
Gas is performed etching, and flow of the flow more than or equal to the oxygen of the sulfur hexafluoride.
In the alternative embodiment of the present invention, second lithographic method includes：Using including sulfur hexafluoride, oxygen
Gas is performed etching, and flow of the flow less than the oxygen of the sulfur hexafluoride.
In the alternative embodiment of the present invention, the third layer is organic film.
In the alternative embodiment of the present invention, the first layer is metal level, and the second layer is non-metallic layer.
An at least embodiment of the invention provides a kind of array substrate manufacturing method, including：
Underlay substrate is provided；
Metal level, non-metallic layer and organic film, and the thickness of the organic film are sequentially formed on the underlay substrate
Degree is more than the target thickness of the organic film after the array base palte completes；
Technique formation via pattern is patterned to the organic film with the exposure non-metallic layer；
It is less than to enter the first lithographic method of the etching rate of the non-metallic layer using the etching rate to the organic film
Row is etched for the first time, and causes the thickness that the non-metallic layer is etched away carrying out the first time less than the non-metallic layer
Original depth before etching；
After the first time etches, it is more than the etching to the non-metallic layer using the etching rate to the organic film
Second lithographic method of rate is etched to expose out the metal level for the second time.
In the alternative embodiment of the present invention, the thickness that the non-metallic layer is etched away in being etched in the first time is
The 30%~80% of the original depth of the non-metallic layer.
In the alternative embodiment of the present invention, first lithographic method includes：Using including sulfur hexafluoride, oxygen
Gas is performed etching, and flow of the flow more than or equal to the oxygen of the sulfur hexafluoride；
Second lithographic method includes：Performed etching using the gas including sulfur hexafluoride, oxygen, and it is described lithium
The flow of sulphur is less than the flow of the oxygen.
Compared with prior art, use organic film as mask in section Example of the present invention, reduce used
Mask plate, in addition, passing through the different etching of twice etching rate, it is to avoid carve.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
Obtain it is clear that or being understood by implementing the present invention.The purpose of the present invention and other advantages can be by specification, rights
Specifically noted structure is realized and obtained in claim and accompanying drawing.
Brief description of the drawings
Accompanying drawing is used for providing further understanding technical solution of the present invention, and constitutes a part for specification, with this
The embodiment of application is used to explain technical scheme together, does not constitute the limitation to technical solution of the present invention.
The etching vias schematic diagram that Fig. 1 provides for one embodiment of the invention；
The lithographic method flow chart that Fig. 2 provides for one embodiment of the invention；
The array substrate manufacturing method flow chart that Fig. 3 provides for another embodiment of the present invention；
The array base palte manufacturing process schematic diagram that Fig. 4 (a)~Fig. 4 (c) provides for one embodiment of the invention.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with accompanying drawing to the present invention
Embodiment be described in detail.It should be noted that in the case where not conflicting, in the embodiment and embodiment in the application
Feature can mutually be combined.
Can be in the computer system of such as one group computer executable instructions the step of the flow of accompanying drawing is illustrated
Perform.And, although logical order is shown in flow charts, but in some cases, can be with suitable different from herein
Sequence performs shown or described step.
Unless otherwise defined, the technical term or scientific terminology that the disclosure is used should be tool in art of the present invention
The ordinary meaning that the personage for having general technical ability is understood." first ", " second " that is used in the disclosure and similar word are simultaneously
Any order, quantity or importance are not indicated that, and is used only to distinguish different parts." comprising " or "comprising" etc.
The element or object that similar word means to occur before the word cover the element or object for appearing in the word presented hereinafter
And its it is equivalent, and it is not excluded for other elements or object.The similar word such as " connection " or " connected " is not limited to physics
Or machinery connection, but electrical connection can be included, it is either directly or indirect." on ", " under ",
"left", "right" etc. is only used for representing relative position relation, and after the absolute position for being described object changes, then the relative position is closed
System may also correspondingly change.
Because organic membrane property is similar to photoresist, it therefore, it can directly perform etching by the use of organic film as mask.Such as
Shown in Fig. 1, array base palte includes underlay substrate 1, and metal level 2, the non-metallic layer 3 and organic being arranged on underlay substrate 1
Film layer 4, when directly using the organic film 4 to be performed etching as mask, it may appear that the carve problem shown in Fig. 1.In order to solve to bore
Quarter problem, employ in the application and carry out the method for twice etching and perform etching, wherein once big to the etching rate of non-metallic layer
In the etching rate to organic film, another etching rate to organic film is more than the etching rate to non-metallic layer, so as to avoid
Carve.The application is further illustrated below by specific embodiment.
Embodiment one
As shown in Fig. 2 the present embodiment provides a kind of lithographic method, applied to successively including first layer, the second layer, third layer
Substrate, including：
Step 201, after third layer formation via pattern exposes the second layer, the quarter to the third layer is used
Erosion rate is less than carries out first time etching to the substrate to the first lithographic method of the etching rate of the second layer, and causes described
The thickness that the second layer is etched away is less than the original depth for carrying out the second layer before the first time etching；
Wherein, the thickness of the second layer before the original depth fingering row of the second layer is etched for the first time.
Step 202, after the first time etches, it is more than using the etching rate to the third layer to the second layer
Second lithographic method of etching rate is etched to expose out the first layer for the second time to the substrate.
In the alternative embodiment of the present invention, original depth root of the third layer before the first time etching is carried out
After the completion of the thickness lost in being etched with second is etched in the first time according to the third layer and is etched for described second
The target thickness of the third layer is determined.Due to using third layer as mask, third layer can be etched away in etching process
Part, therefore, the original depth of third layer need bigger than final target thickness.The thickness specifically having more is according to etching process
The thickness of middle loss is determined.The original depth of third layer is determined after being tested in actual use.
In the alternative embodiment of the present invention, the thickness that the second layer is etched away in being etched in the first time is institute
State the 30%~80% of the original depth of the second layer.Certainly, it is merely illustrative herein, what the second layer was etched away in being etched in first time
Thickness can also be other ratios.
In the present embodiment, dry etching is used.The gas containing sulfur hexafluoride (SF6), oxygen (O2) can be used to be carved
Erosion.It is of course also possible to include helium (He).
Optionally, first lithographic method includes：Performed etching using the gas including SF6, O2, and the SF6
Flow is more than or equal to the flow of the O2.The thickness that SF6 and O2 specific flow can be etched as needed, the material etched
Characteristic etc. is determined by testing.It should be noted that it is merely illustrative herein, other can be used to cause the quarter to the third layer
Erosion rate is less than to be performed etching to the lithographic method of the etching rate of the second layer.
For example, second lithographic method includes：Performed etching using the gas including SF6, O2, and the stream of the SF6
Flow of the amount less than the O2.The thickness that SF6 and O2 specific flow can be etched as needed, the material property etched etc.
Determined by testing.It should be noted that it is merely illustrative herein, other can be used make it that the etching rate to the third layer is big
Performed etching in the lithographic method of the etching rate to the second layer.
For example, the third layer is organic film.The organic film such as can be acrylic.
For example, the first layer is metal level, such as molybdenum (Mo), copper (Cu), silver-colored (Ag), titanium (Ti), lead (Pb), indium
(In), molybdenum (Mo) aluminium (Al) alloy, molybdenum (Mo) neodymium (Nd) alloy etc.；The second layer is non-metallic layer, such as the nitridation for silicon
Thing, the oxide of silicon, nitrogen oxides of silicon etc..It should be noted that merely illustrative herein or other materials.
Certainly, this method can also be used for the etching of the substrate of other structures.
It should be noted that above layers are layer in logic, it can physically include multilayer.Such as, the second layer
For the second layer in logic, it can physically include multilayer.
It should be noted that in other embodiments of the present invention, it is possible to use etch more times, such as 3 times or more times
Etching, last time etching is more than to enter the lithographic method of the etching rate of the second layer using the etching rate to the third layer
Row etching.
The lithographic method that the present embodiment is provided, it is not necessary to extra increase via mask, and non-metallic layer will not be produced
Carve problem, improves production capacity and yield.
Embodiment two
The present embodiment provides a kind of array substrate manufacturing method, as shown in figure 3, including：
There is provided underlay substrate for step 301；
Step 302, metal level, non-metallic layer and organic film are sequentially formed on the underlay substrate, and it is described organic
The thickness of film layer is more than the target thickness of the organic film after the array base palte completes；
Step 303, technique formation via pattern is patterned to the organic film and exposes the non-metallic layer；
Step 304, it is less than the first quarter to the etching rate of the non-metallic layer using the etching rate to the organic film
Etching method carries out first time etching, and the thickness that the non-metallic layer is etched away is less than before the progress first time etching
The original depth of the non-metallic layer；
Step 305, after the first time etches, it is more than using the etching rate to the organic film to described nonmetallic
Second lithographic method of the etching rate of layer is etched to expose out the metal level for the second time.
For example, in step 304, the thickness that the non-metallic layer is etched away in being etched in the first time is described nonmetallic
The 30%~80% of the original depth of layer.
For example, in step 304, first lithographic method includes：Performed etching using the gas including SF6, O2, and institute
The flow for stating SF6 is more than or equal to the flow of the O2.Certainly, other gases, such as He can be also included as needed.Need explanation
, it is merely illustrative herein, other can be used to be less than to the non-metallic layer etching rate of the organic film
The lithographic method of etching rate is performed etching.
For example, in step 305, second lithographic method includes：Performed etching using the gas including SF6, O2, and institute
The flow for stating SF6 is less than the flow of the O2.Certainly, other gases, such as He can be also included as needed.Need explanation
It is, it is merely illustrative herein, other can be used to be more than the etching rate of the organic film quarter to the non-metallic layer
The lithographic method of erosion rate is performed etching.
The illustratively manufacturing process of array base palte by taking Fig. 4 (a)~Fig. 4 (c) as an example.Wherein, the making of array base palte
Dry etching is used in journey, reinforced negative electrode coupled plasma (Enhance Cathode Couple are used
Plasma, ECCP) type equipment.
As shown in Fig. 4 (a), metal level 42, non-metallic layer 43 and organic film 44 are formed on underlay substrate 41 successively, and
The thickness of organic film 44 is more than the target thickness after array base palte completes, the thickness being higher by and via etch (VIA
Etch the thickness lost during) is suitable.Organic film is exposed, organic film via pattern is formed, exposes nonmetallic
Layer 43.
Example, the target thickness of organic film(angstrom), VIA etch loss thicknessTherefore it is organic
The coating thickness of film layer is
As shown in Fig. 4 (b), progress first time VIA etch, source 500~5000W of radio-frequency power, biasing radio-frequency power 0~
5000W, 50~200mTorr of pressure, using gas SF6, O2 and He, SF6 flows are not less than O2 flows, wherein He be it is optional,
Can be without using He.The etching condition is less than to non-metallic layer etching rate to the etching rate of organic film.The VIA etch are only carved
The segment thickness of non-metallic layer 43 is lost, following metal level 42 is not exposed, optionally, the non-metallic layer thickness of etching accounts for gross thickness
30%~80%.First step VIA etch are higher to non-metallic layer etching rate, it is possible to reduce productive temp time；Etched portions
Thickness non-metallic layer is to reduce carve depth.
As shown in Fig. 4 (c), progress second of VIA etch, source 500~5000W of radio-frequency power, biasing radio-frequency power 0~
5000W, 50~200mTorr of pressure, using gas SF6, O2, He, SF6 flows are less than O2 flows, and wherein He is optional.The quarter
Erosion condition is more than the etching rate to non-metallic layer to the etching rate of organic film, therefore after etching can be etched to organic film
Above non-metallic layer, carve is eliminated.The purpose of second etching is to eliminate carve, it is ensured that metal level is done etching.It can see
Arrive, take this lithographic method, because the etching rate to organic film is more than the etching rate to non-metallic layer, to organic film
Etching degree is more than to non-metallic layer, therefore, occurs without carve.
Have it is following some need explanation：
(1) accompanying drawing of the embodiment of the present invention relate only to the present embodiments relate to structure, other structures refer to
It is commonly designed.
(2) for clarity, in the accompanying drawing for describing embodiments of the invention, the thickness in layer or region is exaggerated
Or reduce, i.e., these accompanying drawings are not drawn according to actual ratio.It is appreciated that ought such as layer, film, region or substrate etc
When element is referred to as being located at "above" or "below" another element, the element " direct " can be located at "above" or "below" another element, or
Person may have intermediary element.
(3) in the case where not conflicting, the feature in embodiments of the invention and embodiment can be mutually combined to obtain
New embodiment.
Although disclosed herein embodiment as above, described content be only readily appreciate the present invention and use
Embodiment, is not limited to the present invention.Technical staff in any art of the present invention, is taken off not departing from the present invention
On the premise of the spirit and scope of dew, any modification and change, but the present invention can be carried out in the form and details of implementation
Scope of patent protection, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of lithographic method, applied to include successively first layer, the second layer, third layer substrate, it is characterised in that including：
After third layer formation via pattern exposes the second layer, it is less than using the etching rate to the third layer to institute
The first lithographic method for stating the etching rate of the second layer carries out first time etching to the substrate, and the second layer is etched
The thickness fallen is less than the second layer and carries out the original depth before the first time etching；
After the first time etches, second to the etching rate of the second layer is more than using the etching rate to the third layer
Lithographic method is etched to expose out the first layer for the second time to the substrate.
2. lithographic method as claimed in claim 1, it is characterised in that
Original depth of the third layer before the first time etching is carried out is etched according to the third layer in the first time
The target thickness of the third layer is determined after the completion of the thickness lost in being etched with second and second of etching.
3. lithographic method as claimed in claim 1, it is characterised in that
During the second layer is etched in the first time thickness that etches away for the original depth of the second layer 30%~
80%.
4. lithographic method as claimed in claim 1, it is characterised in that first lithographic method includes：Using including hexafluoro
Change sulphur, the gas of oxygen to perform etching, and flow of the flow more than or equal to the oxygen of the sulfur hexafluoride.
5. lithographic method as claimed in claim 1, it is characterised in that second lithographic method includes：Using including hexafluoro
Change sulphur, the gas of oxygen to perform etching, and flow of the flow less than the oxygen of the sulfur hexafluoride.
6. the lithographic method as described in claim 1 to 5 is any, it is characterised in that the third layer is organic film.
7. the lithographic method as described in claim 1 to 5 is any, it is characterised in that the first layer is metal level, described second
Layer is non-metallic layer.
8. a kind of array substrate manufacturing method, it is characterised in that including：
Underlay substrate is provided；
Metal level, non-metallic layer and organic film are sequentially formed on the underlay substrate, and the thickness of the organic film is big
The target thickness of the organic film after the array base palte completes；
Technique formation via pattern is patterned to the organic film with the exposure non-metallic layer；
The is carried out to the first lithographic method of the etching rate of the non-metallic layer using being less than to the etching rate of the organic film
Once etch, and cause the thickness that the non-metallic layer is etched away to be less than the non-metallic layer in the progress first time etching
Preceding original depth；
After the first time etches, it is more than using the etching rate to the organic film to the etching rate of the non-metallic layer
Second lithographic method is etched to expose out the metal level for the second time.
9. array substrate manufacturing method as claimed in claim 8, it is characterised in that
The thickness that the non-metallic layer is etched away in being etched in the first time is the 30% of the original depth of the non-metallic layer
~80%.
10. array substrate manufacturing method as claimed in claim 8, it is characterised in that
First lithographic method includes：Performed etching using the gas including sulfur hexafluoride, oxygen, and the sulfur hexafluoride
Flow is more than or equal to the flow of the oxygen；
Second lithographic method includes：Performed etching using the gas including sulfur hexafluoride, oxygen, and the sulfur hexafluoride
Flow is less than the flow of the oxygen.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1518093A (en) * | 2003-01-20 | 2004-08-04 | �����ɷ� | Semiconductor device and its manufacturing method |
| US20050082545A1 (en) * | 2003-10-21 | 2005-04-21 | Wierer Jonathan J.Jr. | Photonic crystal light emitting device |
| CN101140852A (en) * | 2006-09-07 | 2008-03-12 | 三星电子株式会社 | Method of forming a fine pattern |
| US8885683B2 (en) * | 2011-12-21 | 2014-11-11 | Canon Kabushiki Kaisha | Process for forming microstructure of nitride semiconductor, surface emitting laser using two-dimensional photonic crystal and production process thereof |
| CN104952932A (en) * | 2015-05-29 | 2015-09-30 | 合肥鑫晟光电科技有限公司 | Thin-film transistor, array substrate, manufacturing method of thin-film transistor, manufacturing method of array substrate, and display device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1518093A (en) * | 2003-01-20 | 2004-08-04 | �����ɷ� | Semiconductor device and its manufacturing method |
| US20050082545A1 (en) * | 2003-10-21 | 2005-04-21 | Wierer Jonathan J.Jr. | Photonic crystal light emitting device |
| CN101140852A (en) * | 2006-09-07 | 2008-03-12 | 三星电子株式会社 | Method of forming a fine pattern |
| US8885683B2 (en) * | 2011-12-21 | 2014-11-11 | Canon Kabushiki Kaisha | Process for forming microstructure of nitride semiconductor, surface emitting laser using two-dimensional photonic crystal and production process thereof |
| CN104952932A (en) * | 2015-05-29 | 2015-09-30 | 合肥鑫晟光电科技有限公司 | Thin-film transistor, array substrate, manufacturing method of thin-film transistor, manufacturing method of array substrate, and display device |
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