CN107201546A - Resistance furnace synthetic single crystal carbonization silicon preparation method - Google Patents

Resistance furnace synthetic single crystal carbonization silicon preparation method Download PDF

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Publication number
CN107201546A
CN107201546A CN201610832905.4A CN201610832905A CN107201546A CN 107201546 A CN107201546 A CN 107201546A CN 201610832905 A CN201610832905 A CN 201610832905A CN 107201546 A CN107201546 A CN 107201546A
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China
Prior art keywords
single crystal
resistance furnace
resistance
synthetic single
silicon carbide
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CN201610832905.4A
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Chinese (zh)
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梅咬清
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Individual
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Priority to CN201610832905.4A priority Critical patent/CN107201546A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention is in resistance furnace synthetic single crystal carbonization manufacture method, and monocrystalline silicon carbide is a kind of semiconductor chip high performance material in category technical field of semiconductors.It is widely used in high-tech and national defense industry.Creativeness breaks through semiconductor high performance material monocrystalline silicon carbide new synthetic method.Now invention is in resistance furnace synthetic single crystal carborundum, and strict temperature control forms synthetic crystallization space, preparation method at 2600 degree：" melting method ", by formula rate dispensing SIC crystal seeds, it is inserts to be aided with green silicon carbide and silica sand, and in resistance furnace synthetic single crystal carborundum, quality is good, crystal is big.Novel features：Than monocrystalline silicon in mechanical property, optical property, thermal property, conduction property etc., there is obvious superior in every respect.Its feature：High temperature resistant anti-yaw damper, hardness high wear resistance, the high resistance to resistance to compression of intensity, ageing-resistant long lifespan, the low conduction of resistance is good.Resistance furnace synthetic single crystal carborundum fills up the blank of semiconductor chip high performance material.It is notable that monocrystalline silicon carbide, small investment, high efficiency are particularly suitable for medium-sized and small enterprises Development and Production, economic and social benefit.

Description

Resistance furnace synthetic single crystal carbonization silicon preparation method
Technical field：
The present invention is in resistance furnace synthetic single crystal carbonization silicon preparation method, and monocrystalline silicon carbide is belonged in technical field of semiconductors A kind of semiconductor chip high performance material.
It is widely used in high-tech and national defense industry.
Technical prospect：
Monocrystalline silicon carbide synthesis has many methods, and it is that " Kai Huafa " is general in vacuum to commonly use monocrystalline silicon carbide synthetic method In carbon shirt-circuiting furnace for 10-30 millimetress of mercury.Distilled by filling in pipe in sic stoves.Synthetic single crystal carborundum, crystal are grown in inwall Small, quality is undesirable.
Creativeness breaks through semiconductor high performance chipses material monocrystalline SiC synthesis new method.Now invention resistance furnace synthesis is single Crystalline substance carbonization silicon preparation method is " dissolution method ", and its technical conditions must possess between temperature 2600, and crystallization synthesis to form list Brilliant carborundum crystals space, in this space, sic is supersaturation concentration state, forms Air Temperature stream, saturation solvent shape, it is necessary to Temperature is constant, is not impacted by external air flow in sealing state.
The content of the invention：
Resistance furnace synthetic single crystal carborundum strict temperature control of the present invention forms crystalline spaces at 2600 degree, and preparation method is Want to be embedded to sealed graphite crucible in resistance furnace, do not influenceed by convection current impact.
Stirred by formula rate dispensing sic crystal and resin glue dry powder, wooden model shaping.Then dried in electric furnace Case, which is heating and curing, is put into black-fead crucible, and it is inserts to be aided with record carborundum and silica sand, in resistance furnace synthetic single crystal carborundum, quality Good, crystal is big.
Novel features：Than monocrystalline silicon in mechanical property, optical property, thermal property, conduction property etc., in every respect all Have obvious superior.
Its feature：High temperature resistant anti-yaw damper, hardness high wear resistance, intensity is high, resistance to resistance to compression.Ageing-resistant long lifespan, resistance is low to lead Electricity is good.
Resistance furnace synthetic single crystal carborundum, fills up the blank of semiconductor chip high performance material.Monocrystalline silicon carbide, investment Less, high efficiency, is particularly suitable for medium-sized and small enterprises Development and Production, economic and social benefit notable.

Claims (1)

  1. The silicon preparation method 1. resistance furnace synthetic single crystal of the present invention is carbonized, and monocrystalline silicon carbide is one in the technical field for belong to semiconductor Plant semiconductor chip high performance material.It is widely used in high-tech and national defense industry.
    Breakthrough creation semiconductor chip high performance single crystal carbofrax material new synthetic method.Existing invention resistance furnace synthetic single crystal carbon SiClx preparation method is " melting method ".Its technical conditions must possess between 2600 degree of humidity, crystallization synthesis, form single crystal carbon SiClx crystal space, in this space, sic is supersaturation concentration state, forms air themperature convection current, saturation solvent shape, it is necessary to Temperature is constant, not by sealing state at external air flow impact.
    Stirred by formula rate dispensing sic crystal seeds and resin glue dry powder, wooden model shaping is then solid in electric furnace drying box Change is put into black-fead crucible, and it is inserts to be aided with record carborundum and silica sand, in resistance furnace synthetic single crystal carborundum.
CN201610832905.4A 2016-09-01 2016-09-01 Resistance furnace synthetic single crystal carbonization silicon preparation method Pending CN107201546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610832905.4A CN107201546A (en) 2016-09-01 2016-09-01 Resistance furnace synthetic single crystal carbonization silicon preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610832905.4A CN107201546A (en) 2016-09-01 2016-09-01 Resistance furnace synthetic single crystal carbonization silicon preparation method

Publications (1)

Publication Number Publication Date
CN107201546A true CN107201546A (en) 2017-09-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610832905.4A Pending CN107201546A (en) 2016-09-01 2016-09-01 Resistance furnace synthetic single crystal carbonization silicon preparation method

Country Status (1)

Country Link
CN (1) CN107201546A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1544715A (en) * 2003-11-14 2004-11-10 中国科学院物理研究所 Method and apparatus for growing silicon carbide single crystal by physical vapor transportation
CN104120493A (en) * 2013-04-24 2014-10-29 梅咬清 Method for synthesizing monocrystal silicon carbide by utilizing resistance furnace

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1544715A (en) * 2003-11-14 2004-11-10 中国科学院物理研究所 Method and apparatus for growing silicon carbide single crystal by physical vapor transportation
CN104120493A (en) * 2013-04-24 2014-10-29 梅咬清 Method for synthesizing monocrystal silicon carbide by utilizing resistance furnace

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Address after: 430311 Hubei Province, Wuhan city Huangpi District Hankou Road North Road No. 13 Shangwu Shekou Street building 401 room 4

Applicant after: Mei Yaoqing

Address before: 430017 Hubei province Wuhan City Jiang'an District No. 6 in the celebration of the liberation of South Road, 3 floor, room 2

Applicant before: Mei Yaoqing