CN104120493A - Method for synthesizing monocrystal silicon carbide by utilizing resistance furnace - Google Patents
Method for synthesizing monocrystal silicon carbide by utilizing resistance furnace Download PDFInfo
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- CN104120493A CN104120493A CN201310611768.8A CN201310611768A CN104120493A CN 104120493 A CN104120493 A CN 104120493A CN 201310611768 A CN201310611768 A CN 201310611768A CN 104120493 A CN104120493 A CN 104120493A
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- silicon carbide
- monocrystal silicon
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Abstract
The invention relates to a method for synthesizing monocrystal silicon carbide by utilizing a resistance furnace. The monocrystal silicon carbide belongs to a semiconductor chip material in the technical field of semiconductors and is widely applied to high-technology and national defence industries. The monocrystal silicon carbide can be synthesized by adopting many methods, a frequently-used monocrystal silicon carbide synthesis method is a 'sublimation method', the sublimation method comprises that SiC furnace charge filled in a carbon tube furnace with the vacuum degree of 10-30 millimeter mercury column sublimates on the inner wall of the carbon tube furnace and the monocrystal silicon carbide is grown and synthesized. The monocrystal silicon carbide is synthesized in the resistance furnace, temperature is strictly controlled to be 2600 DEG C, a synthesis crystal space is formed, a preparation method is a 'melting method', an airtight graphite crucible is buried in the resistance furnace, no convection current impact influence is produced, SiC seed crystal ingredient and resin solution and resin dry powder binders are uniformly stirred according to ratio in a formula, forming is carried out in a wood former, drying, heating and solidifying are carried out in an electric furnace, then the obtained solids are placed into a graphite crucible, silicon carbide and silicon sand are added as auxiliary materials, so that filler is formed, and the monocrystal silicon carbide synthesized in the resistance furnace is good in quality and large in crystals and is especially applicable to development and production of small and medium-sized enterprises, investment is low, efficiency is high, and economic and social benefits are obvious.
Description
Technical field:
The present invention is in resistance furnace synthetic single crystal silicon carbide preparation method.And monocrystalline silicon carbide is to belong to a kind of semiconductor chip material in technical field of semiconductors, be widely used in high-tech and national defense industry.
Technical background:
Monocrystalline silicon carbide is synthetic many methods, and conventional monocrystalline silicon carbide synthetic method is " subliming method ": be in vacuum is generally the carbon tube furnace of 10-30 mmhg, by filling in sic furnace charge distillation in pipe, at the inwall synthetic single crystal silicon carbide of growing.
Existing resistance furnace synthetic single crystal silicon carbide preparation method of the present invention is " melting method ", its technical qualification must possess between temperature 2600 degree, crystallization is synthetic, have the space that forms monocrystalline silicon carbide crystal, in this space, sic is supersaturation concentration state, formation Air Temperature stream, saturated molten state shape, necessary homo(io)thermism, is not subject in extraneous gas shock place sealed state.
Summary of the invention:
Resistance furnace synthetic single crystal silicon carbide of the present invention is strictly controlled temperature and is formed crystallization space at 2600 degree, preparation method imbeds airtight plumbago crucible in resistance furnace, be not subject to convection current shock effect, stir by formula rate dispensing sic crystal seed and resin glue dry powder, wooden model moulding, then be heating and curing and put into plumbago crucible at electric furnace loft drier, being aided with record silicon carbide and silica sand is packing material, at resistance furnace synthetic single crystal silicon carbide, quality is good, and crystal is large, less investment, high efficiency, is particularly suitable for medium and small sized enterprises' Development and Production, and economy and social benefit are remarkable.
Claims (1)
1. the present invention is in resistance furnace synthetic single crystal silicon carbide preparation method, and monocrystalline silicon carbide is to belong to a kind of semiconductor chip material in technical field of semiconductors, is widely used in high-tech and national defense industry;
Resistance furnace synthetic single crystal silicon carbide preparation method is that " melting method " its technical qualification must possess between temperature 2600 degree, crystallization is synthetic, there is the space that forms monocrystalline silicon carbide crystal, in this space, sic is supersaturation concentration state, forms air themperature convection current, saturated molten state shape, necessary homo(io)thermism, is not subject to extraneous airflow convection impact place sealed state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310611768.8A CN104120493A (en) | 2013-04-24 | 2013-11-26 | Method for synthesizing monocrystal silicon carbide by utilizing resistance furnace |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310152201 | 2013-04-24 | ||
| CN201310152201.9 | 2013-04-24 | ||
| CN201310611768.8A CN104120493A (en) | 2013-04-24 | 2013-11-26 | Method for synthesizing monocrystal silicon carbide by utilizing resistance furnace |
Publications (1)
| Publication Number | Publication Date |
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| CN104120493A true CN104120493A (en) | 2014-10-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310611768.8A Pending CN104120493A (en) | 2013-04-24 | 2013-11-26 | Method for synthesizing monocrystal silicon carbide by utilizing resistance furnace |
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| CN (1) | CN104120493A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107201546A (en) * | 2016-09-01 | 2017-09-26 | 梅咬清 | Resistance furnace synthetic single crystal carbonization silicon preparation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1544715A (en) * | 2003-11-14 | 2004-11-10 | 中国科学院物理研究所 | Method and apparatus for growing silicon carbide single crystal by physical vapor transportation |
| CN102057084A (en) * | 2008-07-04 | 2011-05-11 | 昭和电工株式会社 | Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
-
2013
- 2013-11-26 CN CN201310611768.8A patent/CN104120493A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1544715A (en) * | 2003-11-14 | 2004-11-10 | 中国科学院物理研究所 | Method and apparatus for growing silicon carbide single crystal by physical vapor transportation |
| CN102057084A (en) * | 2008-07-04 | 2011-05-11 | 昭和电工株式会社 | Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107201546A (en) * | 2016-09-01 | 2017-09-26 | 梅咬清 | Resistance furnace synthetic single crystal carbonization silicon preparation method |
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Application publication date: 20141029 |
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