CN107199642B - A kind of crystalline material ultra-precise cutting machining damage control method - Google Patents
A kind of crystalline material ultra-precise cutting machining damage control method Download PDFInfo
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- CN107199642B CN107199642B CN201710358632.9A CN201710358632A CN107199642B CN 107199642 B CN107199642 B CN 107199642B CN 201710358632 A CN201710358632 A CN 201710358632A CN 107199642 B CN107199642 B CN 107199642B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
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Abstract
The present invention relates to a kind of crystalline material ultra-precise cutting machining damage control methods, it include: according to material to be processed, cutting parameter design Multi-layer amorphous system, determine amorphous layer number, depth and thickness, and Monte Carlo numerical simulation ion irradiation process is utilized, calculate ion source, Implantation Energy is combined with dosimetry parameter；Ion irradiation is carried out using ion implantation apparatus or high energy acclerator according to the injection parameter of calculating, completes the preparation of material internal Multi-layer amorphous structure；Change thickness in conjunction with the crisp modeling of knife tool arc radius, cutting depth, amorphous layer geometric parameter and workpiece material, determines the maximum feed rate that turning allows；According to above-mentioned Cutting parameters, plane machining is carried out to modified crystal.
Description
Technical field
The present invention relates to a kind of precision turning processing methods.
Background technique
Diamond turning can trace back to World War II period the 1940s, by long-run development,
One of core technology as modern Ultra-precision Turning, application field also from military and national defense expand to scientific research with it is civilian.Super
Precision machine tool and high rigidity, high rigidity cutter guarantee under, diamond turning can complete very accurate tool motion, realize
The processing of optical grade surface, surface figure accuracy and surface roughness are respectively up to sub-micron and nanometer scale.In addition, ultra-precise cutting
It is the preferred plan of current freeform optics surface processing, compared with grinding, it can not only meet complicated face shape requirement, may be used also
Machining damage is effectively relieved, reduce even without final polishing process.
The machinability of different materials has very big difference, since most of crystal are fragile materials, in turning
Easily occur to be broken in the process and cause surface failure of rock, seriously affects product quality.In order to realize the plastic region to crystalline material
Processing obtains optical grade product surface, the brittleness of workpiece surface can be reduced using the modified method in surface, this process can
It is realized by ion beam irradiation.In irradiation process, material can be changed into noncrystalline state, mechanical strength and brittleness from crystalline state
It reduces, realizes modified effect.But existing radiation modification technical goal is to form single amorphous layer, and range reaches material surface.
This process needs the ion irradiation of large dosage, increases manufacturing cost.
Detailed description of the invention
The generation b. amorphous layer of Fig. 1 crystal turning powder injection molding schematic diagram, a. crystal turning damage hinders crack propagation
Fig. 2 thickness of cutting and crisp modeling change thickness relationship schematic diagram, and it is non-that a. diamond turning material removes thickness b. multilayer
Material removal amount can be improved in crystal structure
Summary of the invention
In view of the above-mentioned problems, the purpose of the present invention is overcoming, the prior art is big to irradiation ion consumption, manufacturing cost is high
Deficiency propose a kind of crystalline material ultra-precise cutting in conjunction with the interaction process of ultra-precise cutting process tool and workpiece
Machining damage control method.The present invention realizes Multi-layer amorphous structure by control irradiation parameters, inhibits the brittleness of material in processing
The modified dosage of ion irradiation is effectively reduced in rupture failure surface.To achieve the above object, the present invention takes following technical scheme:
A kind of crystalline material ultra-precise cutting machining damage control method, includes the steps that following:
1) Multi-layer amorphous system is designed according to material to be processed, cutting parameter, determines amorphous layer number, depth and thickness,
And Monte Carlo numerical simulation ion irradiation process is utilized, calculate ion source, Implantation Energy is combined with dosimetry parameter.
2) ion irradiation is carried out using ion implantation apparatus or high energy acclerator according to the injection parameter of calculating, completed in material
The preparation of portion's Multi-layer amorphous structure, is made modified crystal；
3) the crisp modeling of knife tool arc radius, cutting depth, amorphous layer geometric parameter and workpiece material is combined to change thickness,
Determine the maximum feed rate that turning allows；
4) according to above-mentioned Cutting parameters, plane machining is carried out to modified crystal.
Injection parameter can be such that ion source is F, Implantation Energy for 160-400keV between, implantation dosage for 9.5 ×
1014-1.5×1015cm-2。
This hair due to using the technology described above, has the advantage that compared with prior art
(1) processing cost is significantly reduced.In the prior art, the formation of single layer non crystalline structure needs very high implantation dosage.
This is because decrystallized formation needs generate highdensity lattice damage in irradiation process, and damage density on the surface of the material
Locate very low.Therefore it in irradiation process, although material internal has occurred and that decrystallized, still needs to be continuously increased ion dose to guarantee
Amorphous layer expands to surface.However in the present invention, amorphous layer thickness is small, number is more, and does not require to expand to material surface, from
And it can dramatically reduce irradiation dose and processing cost.
(2) flexibility and controllability of ion irradiation technology are more fully played.Ion irradiation technology can be accurately
The foreign particles doping of certain concentration is realized in material internal designated depth, and nanometer grade thickness, Multi-layer amorphous knot has been effectively ensured
High-precision requirement of the structure to process equipment.For different material and diamond turning parameter, can to amorphous layer number and
The thickness of each amorphous layer carries out flexible design, so as to adjust material to the resistivity of process brittle fracture.
Specific embodiment
Fracture of the crystalline material in turning results from green surface side, as shown in Figure 1a.When crackle is made in cutter
When extending to machined surface depth with lower extension, machining damage will result in.Based on this problem, technical solution of the present invention
It is to prepare multiple amorphous thin layers in the material in advance (see Fig. 1 b).It will receive resistance after crack propagation to amorphous layer near surface
Hinder, stops or slow down its further movement to material internal, to protect finished surface.Joined according to different materials and turning
Number flexibly controls amorphous layer thickness, depth and number, obstruction ability of the adjustment Multi-layer amorphous system to crackle.Such as high crisp
Property material, need to form more amorphous layers protection finished surfaces.
For the diamond cutter of arc-shaped cutting edge, material removal amount when turning is variation in the different location of Circular Nose Cutting Edge
, it is bigger closer to thickness of cutting at green surface, also more it is easy to happen brittle fracture.It, must in general process
It must guarantee that crisp modeling of the maximum thickness of cutting lower than material in cutting edge entire scope changes thickness (see Fig. 2 a).When material internal is deposited
After Multi-layer amorphous, although maximum thickness of cutting can exceed that crisp modeling transformation thickness and be broken that crackle can terminate in
Deeper amorphous layer can not destroy finished surface.Need to guarantee that the cutting output at amorphous layer is crisp lower than machined material simultaneously
Modeling transformation thickness, as shown in Figure 2 b.
Multi-layer amorphous realizes its preparation using ion implantation technique, passes through specific ion source, acceleration voltage and injectant
Amount can obtain accurate amorphous layer distribution.The part is the basic knowledge of material science and ion implantation technique, by looking into
It reads relevant references and obtains [1,2].
Bibliography
[1]Pelaz L,Marqués LA,Barbolla J.Ion-beam-induced amorphization and
recrystallization in silicon.Journal ofappliedphysics 2004；96(11)；5947-76.
[2]Walsh P,Omeltchenko A,Kalia R K,et al.Nanoindentation of silicon
nitride:A multimillion-atom molecular dynamics study.Appliedphysics letters,
2003,82(1):118-120.
Embodiment is as follows:
1. designing Multi-layer amorphous system according to material to be processed, cutting parameter, amorphous layer number, depth and thickness are determined,
And using Monte Carlo (using SRIM software realization) numerical simulation ion irradiation process, ion source, injection energy are calculated
Amount is combined with dosimetry parameter.
2. carrying out ion irradiation using commercial ion implanter or high energy acclerator according to the injection parameter of calculating, material is completed
Expect the preparation of internal Multi-layer amorphous structure；
3. combine the crisp modeling of knife tool arc radius, cutting depth, amorphous layer geometric parameter and workpiece material to change thickness,
Determine the maximum feed rate that turning allows；
4. carrying out plane machining experiment to modified crystal and common crystal according to above-mentioned Cutting parameters.
The ion implanting parameter of above-described embodiment is as follows:
Ion implanting parameter in 1 embodiment of subordinate list
(note: 1 μm of cutting depth, knife tool arc radius 0.5mm).
Claims (2)
1. a kind of crystalline material ultra-precise cutting machining damage control method, includes the steps that following:
1) Multi-layer amorphous system is designed according to material to be processed, cutting parameter, determines amorphous layer number, depth and thickness, and benefit
With Monte Carlo numerical simulation ion irradiation process, ion source is calculated, Implantation Energy is combined with dosimetry parameter；
2) ion irradiation is carried out using ion implantation apparatus or high energy acclerator according to the injection parameter of calculating, it is more completes material internal
The preparation of layer non crystalline structure, is made modified crystal；
3) it combines the crisp modeling of knife tool arc radius, cutting depth, amorphous layer geometric parameter and workpiece material to change thickness, determines
The maximum feed rate that turning allows；
4) according to above-mentioned Cutting parameters, plane machining is carried out to modified crystal.
2. crystalline material ultra-precise cutting machining damage control method according to claim 1, which is characterized in that injection ginseng
Number is as follows: ion source F, and for Implantation Energy between 160-400keV, implantation dosage is 9.5 × 1014-1.5×1015cm-2。
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| CN102476405A (en) * | 2010-11-23 | 2012-05-30 | 大连创达技术交易市场有限公司 | Method for improving precise processing precision through particle beams |
| CN106185798A (en) * | 2016-07-22 | 2016-12-07 | 天津大学 | The fragile material nanometer cutting process injected based on focused ion bundle |
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