CN107196519A - A kind of silicon carbide device driving power supply - Google Patents
A kind of silicon carbide device driving power supply Download PDFInfo
- Publication number
- CN107196519A CN107196519A CN201710575929.0A CN201710575929A CN107196519A CN 107196519 A CN107196519 A CN 107196519A CN 201710575929 A CN201710575929 A CN 201710575929A CN 107196519 A CN107196519 A CN 107196519A
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- Prior art keywords
- power supply
- inductance
- electric capacity
- circuit
- silicon carbide
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
- H02M1/007—Plural converter units in cascade
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of silicon carbide device driving power supply, including power supply transmitting terminal Tx, power supply receiving terminal Rx, output voltage adjustment circuit Vreg, power supply energy control and protection circuit, insulator, power supply transmitting terminal TxIncluding：Self-excitation inverter circuit Hinv, the first inductance LpWith the first electric capacity Cp, the first inductance LpWith the first electric capacity CpIt is in parallel；Power supply receiving terminal RxIncluding：Second inductance Ls, the second electric capacity Cs, full bridge rectifier Hrec, the second inductance LsWith the second electric capacity CsSeries connection；Output voltage adjustment circuit VregIncluding：Buck circuits, Boost circuit, the 3rd inductance L3；First inductance LpSide install the first magnetic core, the second inductance LsSide is installed by the second magnetic core.The present invention is overcome in existing inductively coupled power transfer technology as transmission range increase and receiving terminal change in location transmission efficiency are significantly reduced, it is impossible to realize the problem of efficient energy is transmitted, effectively increase efficiency of transmission by optimizing structure design.
Description
Technical field
The present invention relates to a kind of silicon carbide device driving power supply, belong to electric and electronic technical field.
Background technology
Carborundum (Silicon Carbide, SiC) is a kind of compound semiconductor materials being made up of silicon and carbon, insulation
Disruptive field intensity is about 10 times of silicon, therefore, compared with silicon device, can be with the drift of higher dopant concentration and thinner thickness
Layer produces several kV high withstand voltage power device.At present, external existing more than 10kV SiC IGBT, MOSFET, GTO report,
The parasitic capacitance of these devices is smaller, results in the run switch frequency of several times silicon-based devices, however its to actuation techniques and
The requirement of driving power supply is also higher, such as the pressure-resistant, low coupling capacitor of former secondary height insulation, electrical stability and self-shield, there is no
Matured product.
Current silicon carbide device driving power supply mainly uses inductively coupled power transfer technology (Inductively
Coupled Power Transmission) carry out electric energy transmission, the medium that ICPT is mainly transmitted using magnetic field as electric energy, lead to
Cross Power Electronic Technique and improve field frequency, reduction air gap losses, realize the transmission of radio energy.This wireless power transmission technology exists
Point blank internal efficiency is very high, but efficiency of transmission can be substantially reduced with transmission range increase and receiving terminal change in location, only suitable
Share the short-distance transmission in Centimeter Level.The efficient transmission problem of the electric energy in transmission range increase can not be met.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention provides a kind of silicon carbide device driving power supply, to solve prior art
In significantly reduce with transmission range increase and receiving terminal change in location transmission efficiency, it is impossible to realize that the transmission of efficient energy is asked
Topic.
In order to achieve the above object, the technical solution adopted in the present invention is：Including power supply transmitting terminal Tx, power supply receiving terminal
Rx, output voltage adjustment circuit Vreg, power supply energy control and protection circuit, insulator；
The power supply transmitting terminal TxReceive the first DC voltage VinAnd it is converted into electric energy, the power supply receiving terminal RxPickup institute
State electric energy and be converted into the second DC voltage, the output voltage adjustment circuit VregReceive the second DC voltage and be converted into carbon
SiClx device drive voltage；
The power supply transmitting terminal TxIncluding：Self-excitation inverter circuit Hinv, the first inductance LpWith the first electric capacity Cp, first electricity
Feel LpWith the first electric capacity CpIt is in parallel；
The power supply receiving terminal RxIncluding：Second inductance Ls, the second electric capacity CsWith full bridge rectifier Hrec, second electricity
Feel LsWith the second electric capacity CsSeries connection；
The output voltage adjustment circuit VregIncluding：Buck circuits, Boost circuit and the 3rd inductance L3；
The first inductance LpSide install the first magnetic core, the second inductance LsSide is installed by the second magnetic core.
Wherein, the first inductance LpWith the second inductance Ls, installed in the inner wall of the insulator；First magnetic
Core is arranged on the first inductance LpWith the first inductance LpBetween the circuit board of side, NTC1 presses close to the first inductance Lp
Place；Second magnetic core is arranged on the second inductance LsWith the second inductance LsBetween the circuit board of side, NTC2 presses close to
Second inductance LsPlace, the NTC1 and the NTC2 are the electricity component with temperature sensor functionality.
Wherein, silicon carbide device driving power supply according to claim 1, it is characterised in that：
The NTC1 and NTC2 is negative temperature coefficient thermistor.
The self-excitation inverter circuit HinvIncluding the 4th inductance L1, the 5th inductance L2, first switch S1, second switch S2,
One voltage-stabiliser tube Z1, the second voltage-stabiliser tube Z2, the first diode D1, the second diode D2, the 4th electric capacity C1, the 5th electric capacity C2, the first electricity
Hinder R1, second resistance R2, 3rd resistor R3, the 4th resistance R4, the 5th resistance R5With the 6th resistance R6,
The 3rd resistor R3, the 4th resistance R4, the 4th electric capacity C1With the first diode D1Composition is described
First switch S1Gate-drive self-excited circuit, the 5th resistance R5, the 6th resistance R6, the 5th electric capacity C2And institute
State the second diode D2Constitute the second switch S2Gate-drive self-excited circuit.
The output voltage adjustment circuit VregMiddle Buck circuits, Boost circuit and the 3rd inductance L3Concatenation, the output
One end of voltage-regulating circuit connects the full bridge rectifier Hrec, other end connection silicon carbide device drive circuit.
The second electric capacity CsThe 3rd electric capacity C of parallel connectiong, the 3rd electric capacity CgFor controlled capacitance group.
The power supply transmitting terminal Tx, the power supply receiving terminal Rx, the output voltage adjustment circuit Vreg, the power supply energy
Control and protection circuit are included in the insulator.
Specifically, power supply transmitting terminal TxReceive the first DC voltage VinAfter input, self-maintained circuit H is utilizedinvProduce high
Frequency voltage, passes through the first inductance LpWith the first electric capacity CpParallel connection formed the first resonator, filter module obtain electric energy, by magnetic field to
Power supply receiving terminal RxElectric energy is transmitted, and by the first electric capacity CpRealize reactive-load compensation；
The power supply receiving terminal RxPass through the second inductance LsThe pickup of the electric energy is realized, and by the second electric capacity CsRealize nothing
Work(is compensated, through the second inductance LsWith the second electric capacity CsThe second resonator, filter module that series connection is formed sends out the electric energy
Deliver to full bridge rectifier HrecIt is converted into after the second DC voltage and exports；
Output voltage adjustment circuit VregReceive the second DC voltage and be converted into silicon carbide device driving voltage.
Also include power supply energy control and protection circuit, the power supply energy control and protection circuit are to the silicon carbide device
Part drive circuit and full bridge rectifier HrecOutput is detected, and realizes power supply transmitting terminal TxWith power supply receiving terminal RxBetween electric energy
Real-time Balancing.
Relative to prior art, silicon carbide device driving power supply of the present invention has the advantage that：The present invention is by excellent
Change structure design, in the first inductance Lp, the second inductance LsA secondary side one magnetic core is respectively installed, concentrate the most of magnetic line of force
In in certain scope, the bounds in magnetic field is reduced, is overcome in existing inductively coupled power transfer technology with transmission distance
Significantly reduced from increase and receiving terminal change in location transmission efficiency, it is impossible to realize the problem of efficient energy is transmitted, effectively improve
Efficiency of transmission.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, below by using required in embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, on the premise of not paying creative work, it can also be obtained according to these accompanying drawings other attached
Figure.
Fig. 1 is overall circuit figure provided in an embodiment of the present invention；
Fig. 2 is output voltage adjustment circuit of the embodiment of the present invention；
Fig. 3 is power supply transmitting terminal self-maintained circuit figure of the embodiment of the present invention；
Fig. 4 is power supply transmitting terminal self-maintained circuit switching tube of embodiment of the present invention S1、S2Drain electrode and gate pole oscillogram；
Fig. 5 is energy hole principle of the embodiment of the present invention；
Fig. 6 is insulator of the embodiment of the present invention and circuit installation diagram.
Embodiment
To make those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specific embodiment party
Formula is described in further detail to the present invention.It is described in more detail below embodiments of the present invention, the embodiment is shown
Example is shown in the drawings, wherein same or similar label represents same or similar element or with identical or class from beginning to end
Like the element of function.The embodiment described below with reference to accompanying drawing is exemplary, is only used for explaining the present invention, and can not
It is construed to limitation of the present invention.
Those skilled in the art of the present technique are appreciated that unless expressly stated, singulative " one " used herein, " one
It is individual ", " described " and "the" may also comprise plural form.It is to be further understood that what is used in the specification of the present invention arranges
Diction " comprising " refer to there is the feature, integer, step, operation, element and/or component, but it is not excluded that in the presence of or addition
Other one or more features, integer, step, operation, element, component and/or their group.It should be understood that when we claim member
Part is " connected " or during " coupled " to another element, and it can be directly connected or coupled to other elements, or can also exist
Intermediary element.In addition, " connection " used herein or " coupling " can include wireless connection or coupling.Wording used herein
"and/or" includes one or more associated any cells for listing item and all combined.
Fig. 1 show the overall circuit schematic diagram of the present invention, is also energy flow scheme, power supply transmitting terminal TxWill be received
One DC voltage VinAfter input, self-maintained circuit H is utilizedinvHigh frequency voltage is produced, passes through the first inductance LpWith the first electric capacity Cp
The first resonator, filter module that parallel connection is formed obtains electric energy, by magnetic field to power supply receiving terminal RxElectric energy is transmitted, and by the first electricity
Hold CpRealize reactive-load compensation；Power supply receiving terminal RxPass through the second inductance LsThe pickup of electric energy is realized, and by the second electric capacity CsRealize nothing
Work(is compensated, through the second inductance LsWith the second electric capacity CsThe second resonator, filter module that series connection is formed sends electric energy to the full-bridge
Rectification circuit HrecIt is converted into after the second DC voltage and exports；First inductance LpSide install the first magnetic core, the second inductance LsOne
The second magnetic core is installed in side, most of magnetic line of force is concentrated in certain scope, reduces the bounds in magnetic field, effectively increases
Efficiency of transmission.
The first inductance LpSide install the first magnetic core, the second inductance LsSide is installed by the second magnetic core.
Wherein, the first inductance LpWith the second inductance Ls, installed in the inner wall of the insulator；First magnetic
Core is arranged on the first inductance LpWith the first inductance LpBetween the circuit board of side, NTC1 presses close to the first inductance Lp
Place；Second magnetic core is arranged on the second inductance LsWith the second inductance LsBetween the circuit board of side, NTC2 presses close to
Second inductance LsPlace, the NTC1 and the NTC2 are the electricity component with temperature sensor functionality.Wherein, the NTC1
It is negative temperature coefficient thermistor with the NTC2.
It should be noted that NTC1 presses close to the first inductance LpPlace, refer to NTC1 close to the first inductance LpDistance to a declared goal,
The distance to a declared goal ensures that NTC1 can normally realize temperature sensor functionality；NTC2 presses close to the second inductance LsPlace, refer to
NTC2 is close to the first inductance LsDistance to a declared goal, the distance to a declared goal ensures that NTC2 can normally realize temperature sensor functionality.
To realize silicon carbide device drive circuit in the stable voltage requirements of different loads situation, silicon carbide device driving electricity
Source and silicon carbide device drive circuit Fault Isolation, full bridge rectifier HrecAdded between silicon carbide device drive circuit
Output voltage adjustment circuit V as shown in Figure 2reg, the circuit composes in series by Buck circuits and Boost circuit, middle by the
Three inductance L3Linking, it controls to be realized by power supply energy control and protection circuit.Output voltage adjustment circuit VregPass through concatenation
Second DC voltage is converted into silicon carbide device drive circuit+20/-5V voltage ranges by Buck and Boost circuit, maintains carbonization
Silicon device is in optimum Working.In normal operation, circuit operates in Buck patterns, passes through Q1、Q2Switch motion not only can be with
Control output meets the voltage of drive circuit, can directly turn off Q in drive circuit failure again1、Q2Isolated fault, now Boost
The low-end switch Q of circuit3For normally closed, high-end switch Q4To be normally opened；In low voltage, circuit can pass through Boost mode switch
Q3、Q4Output voltage is lifted, drive circuit voltage requirements are met, now Buck circuits low-end switch Q1For normally opened, high-end switch Q2
Only work as normally closed switch, during in the event of failure, can directly turn off Q3、Q4Isolated fault.In addition, the circuit also corresponds to output voltage
V1-V3, electric current I1-I3Three groups of measurement points are to energy control module chip IC 1, and chip IC 1 is by detecting voltage x current information, meter
The realtime power of drive circuit needs is calculated, then Differential Output power is reached by changing the numerical value of secondary compensation capacitor group
Purpose, prevent output voltage overshoot even punch through damage.
Power supply energy is controlled and protection part passes through control chip IC1 according to the electrical energy demands of silicon carbide device drive circuit
Realize power supply transmitting terminal TxWith power supply receiving terminal RxBetween electric energy Power Control and protection, prevent silicon carbide device drive circuit not
Voltage overshoot and poor efficiency under working condition；Power supply receiving terminal RxSecondary voltage current information, and profit are measured by chip IC 1
Change the 3rd electric capacity C with special algorithm result of calculationgActual access circuit numerical value, thus changes coupling coil delivering power, real
Existing power output is controlled in real time.
As shown in figure 3, power supply transmitting terminal TxSelf-maintained circuit mainly have the 4th inductance L1, the 5th inductance L2, first open
Close S1, second switch S2, the first voltage-stabiliser tube Z1, the second voltage-stabiliser tube Z2, the first diode D1, the second diode D2, the 4th electric capacity C1、
5th electric capacity C2, first resistor R1, second resistance R2, 3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, its
In the first voltage-stabiliser tube Z1, the second voltage-stabiliser tube Z2Mainly protection first switch S1, second switch S2, prevent its gate pole excessive pressure damages
Switch, correspondence first resistor R1, second resistance R2For pull down resistor, stable gate potentials, and the first switch S that can release are kept1、
Second switch S2Grid capacitance energy；3rd resistor R3, the 4th resistance R4, the 4th electric capacity C1With the first diode D1Composition first is opened
Close S1Gate-drive self-excited circuit, and the 5th resistance R5, the 6th resistance R6, the 5th electric capacity C2With the second diode D2Then constitute
Two switch S2Gate-drive self-excited circuit.Its specific connected mode is as follows：First DC voltage Vin negative pole for publicly,
Its positive pole access coupling inductance the 4th inductance L1, the 5th inductance L2Points of common connection, the node connects 3rd resistor R simultaneously3,
Three resistance R6Public one end in parallel, 3rd resistor R3The other end is connected to node N1, the 6th resistance R6The other end is connected to node
N2；4th inductance L1The other end be connected to first switch S1Drain electrode, i.e. node P2, the node is while connect the first inductance LpWith
One electric capacity CpParallel resonance chamber one end, is also connected with the second diode D in addition2Negative electrode；5th inductance L2The other end be connected to second
Switch S2Drain electrode, i.e. node P1, the node is while the L of linkup transmit the firstpWith the first CpThe parallel resonance chamber other end, also connects in addition
Meet the first diode D1Negative electrode.First diode D1, the 4th electric capacity C1With the 4th resistance R4Parallel connection, public one end connection section in parallel
Point P1, the first S of other end connection1Grid, i.e. node N1, while the M that the node is also connected1Drain electrode, and the first voltage-stabiliser tube Z1
Negative electrode and first resistor R1One end in parallel, the first voltage-stabiliser tube Z1Anode and first resistor R1The other end in parallel, and M1Source electrode is direct
Connect publicly.Second diode D2, the 5th electric capacity C2With the 5th resistance R5Parallel connection, public one end connecting node P in parallel2, in addition one
End connection second switch S2Grid, i.e. node N2, while the M that the node is also connected2Drain electrode, and the second voltage-stabiliser tube Z2Negative electrode and
Second resistance R2One end in parallel, the second voltage-stabiliser tube Z2Anode and second resistance R2The other end in parallel, and M1Source electrode directly connects public
Ground.Switching tube M1、M2Grid be connected to IC2 output.
Fig. 4 is first switch S1, second switch S2Drain and gate oscillogram, it is evident that the drain voltage of each switching tube
Controlled by its own resonant tank, when magnitude of voltage is more than gate pole threshold value, correspondence switching tube conducting, opposite switching tube is always
Shut-off；When magnitude of voltage is less than gate pole threshold value, correspondence switching tube is begun to turn off, due to resonance reason, opposite switching tube gate pole electricity
Pressure is begun to ramp up；Said process, constantly repeatedly, completes Resonant tube running.In addition, IC2 be used for detect primary current, it is humorous
Shake capacitance voltage and inductor temperature, when any one amount exceedes threshold value, controlling switch pipe M1、M2Open block first switch S1、
Second switch S2Pulse, terminates self-excited circuit transimission power.
Energy hole schematic diagram as shown in Figure 5, by detecting the electric current I shown in Fig. 41-I3, then with the threshold value of setting
ε1-ε3Carry out logic judgment, so that it may determine whether there is failure, be then made as corresponding protection output, isolate corresponding failure,
Ensure the reliable turn-off of drive circuit.Meanwhile, by calculating V1*I1, V2*I2, V3*I3The numerical value of three, when therein any two
Individual difference exceeds certain threshold epsilon4-ε5When, so that it may it is determined that there is the mismatch of energy.Work as V1*I1Numerical value with respect to other two
When less than normal, the numerical value of electric capacity resistance in parallel is reduced, makes the second inductance Ls, the second electric capacity CsWith the 3rd electric capacity CgThe series connection of three is humorous
Vibration frequency is close to natural resonance center frequency；Conversely, the numerical value of increase electric capacity resistance in parallel, makes the second inductance Ls, the second electric capacity CsWith
3rd electric capacity CgThe series resonance frequency of three deviates natural resonance center frequency.It should be noted that the 3rd electric capacity CgIt is to have 5
1nF, 3 470pF, 3 220pF and 3 100pF capacitor bank are into and each capacitor connects controllable MOSFET arrays
MCg, when MOSFET arrays MCg receives IC1 different instruction, performs related specific switching manipulation, obtains suitably simultaneously
Join the power that capacitance group Numerical Control receives.
As shown in fig. 6, the former secondary of power supply is all encapsulated in the insulator of a shaping, all circuits and coil are put into absolutely
After edge body, encapsulating encapsulation is then carried out, high insulating requirements is met, finally only reserves 2+24V direct currents inlet wires and 3+20/-5V
Direct current outlet, all inlet-outlet lines are all 30kV high voltage insulated cables.Insulator inner thickness is 3mm, meets 30kV high-voltage isulations
Voltage-withstand test, insulator exterior is made up of 4 barrier walls, for increasing the creep age distance between former secondary.Certainly, if necessary to more
The high class of insulation, insulator inner thickness can be thickened, and corresponding barrier wall number also needs correspondence to increase.In addition, former secondary for increase
The coefficient of coup on side, former secondary inductance and magnetic core are all placed on close to the inner side of insulator insulation wall, its core gaps (i.e. insulator
Inner thickness) determined by insulator insulating wall thickness.
Relative to prior art, the present invention is by optimizing structure design, by respectively increasing a magnetic core in a secondary side, and
Fixed structure is designed, most of magnetic line of force is concentrated in certain scope, the bounds in magnetic field is reduced, effectively increases biography
Defeated efficiency.So that making most of magnetic line of force concentrate in certain scope, the bounds in magnetic field is reduced, is overcome existing
As transmission range increase and receiving terminal change in location transmission efficiency are significantly reduced in inductively coupled power transfer technology, it is impossible to real
The problem of now efficient energy is transmitted, effectively increases efficiency of transmission.And relative to most of like products at present on the market,
1/3~1/2 coil and the volume of device can be reduced.
Further, the design has been extenuated efficiency of transmission using electromagnetic induction principle and can increased with transmission range and receiving terminal
Change in location and the problem of be substantially reduced, and realize the insulation effect of super-pressure by increasing insulating materials polyethylene, example
Such as：Polyethylene insulation material is added in transmitting terminal Tx and receiving terminal Rx both sides, by designing related profile, insulating requirements are being met
Under conditions of (be preferable to minimize that stray parameter and the maximum former secondary coefficient of coup wherein it is possible to compromise, such as：Coupled capacitor is small
In 3pF, the coefficient of coup is more than 0.5), so as to reach the high insulating requirements of super-pressure.And the circuit provided by the present embodiment
Design, for example：PCB (Printed Circuit Board, the printed circuit board) design provided such as Fig. 1,2,4 and 5,
The requirement of high pressure carbonization silicon device frequency applications is supplied to while stray parameter is controlled, realizes that the insulation of high-tension circuit will
Ask.Also having passed through the output voltage adjustment circuit Vreg realizes short-circuit protection function, can be examined in time after failure generation
Survey and prevent the expansion of fault coverage.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, some improvement and deformation can also be made, these improve and deformed
Also it should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of silicon carbide device driving power supply, it is characterised in that：Including power supply transmitting terminal Tx, power supply receiving terminal Rx, output voltage
Adjustment circuit Vreg, power supply energy control and protection circuit, insulator；
The power supply transmitting terminal TxReceive the first DC voltage VinAnd it is converted into electric energy, the power supply receiving terminal RxPick up the electricity
The second DC voltage, the output voltage adjustment circuit V and can be converted intoregReceive the second DC voltage and be converted into carborundum
Device drive voltage；
The power supply transmitting terminal TxIncluding：Self-excitation inverter circuit Hinv, the first inductance LpWith the first electric capacity Cp, the first inductance Lp
With the first electric capacity CpIt is in parallel；
The power supply receiving terminal RxIncluding：Second inductance Ls, the second electric capacity CsWith full bridge rectifier Hrec, the second inductance Ls
With the second electric capacity CsSeries connection；
The output voltage adjustment circuit VregIncluding：Buck circuits, Boost circuit and the 3rd inductance L3；
The first inductance LpSide install the first magnetic core, the second inductance LsSide is installed by the second magnetic core.
Wherein, the first inductance LpWith the second inductance Ls, installed in the inner wall of the insulator；First magnetic core is pacified
Mounted in the first inductance LpWith the first inductance LpBetween the circuit board of side, NTC1 presses close to the first inductance LpPlace；
Second magnetic core is arranged on the second inductance LsWith the second inductance LsBetween the circuit board of side, NTC2 presses close to second
Inductance LsPlace, the NTC1 and the NTC2 are the electricity component with temperature sensor functionality.
2. silicon carbide device driving power supply according to claim 1, it is characterised in that：
The NTC1 and NTC2 is negative temperature coefficient thermistor.
3. silicon carbide device driving power supply according to claim 1, it is characterised in that：The self-excitation inverter circuit HinvBag
Include the 4th inductance L1, the 5th inductance L2, first switch S1, second switch S2, the first voltage-stabiliser tube Z1, the second voltage-stabiliser tube Z2, the one or two
Level pipe D1, the second diode D2, the 4th electric capacity C1, the 5th electric capacity C2, first resistor R1, second resistance R2, 3rd resistor R3, the 4th
Resistance R4, the 5th resistance R5With the 6th resistance R6,
The 3rd resistor R3, the 4th resistance R4, the 4th electric capacity C1With the first diode D1Constitute described first
Switch S1Gate-drive self-excited circuit, the 5th resistance R5, the 6th resistance R6, the 5th electric capacity C2With described
Two diode D2Constitute the second switch S2Gate-drive self-excited circuit.
4. silicon carbide device driving power supply according to claim 1, it is characterised in that：The output voltage adjustment circuit
VregMiddle Buck circuits, Boost circuit and the 3rd inductance L3Concatenation, one end connection of the output voltage adjustment circuit is described complete
Bridge rectification circuit Hrec, other end connection silicon carbide device drive circuit.
5. silicon carbide device driving power supply according to claim 1, is further characterized in that：The second electric capacity CsIn parallel the
Three electric capacity Cg, the 3rd electric capacity CgFor controlled capacitance group.
6. the silicon carbide device driving power supply according to claim 1, it is characterised in that：The power supply transmitting terminal Tx, it is described
Power supply receiving terminal Rx, the output voltage adjustment circuit Vreg, power supply energy control and protection circuit be included in the insulation
In body.
7. the silicon carbide device driving power supply according to claim 1, it is characterised in that：
Power supply transmitting terminal TxReceive the first DC voltage VinAfter input, self-maintained circuit H is utilizedinvHigh frequency voltage is produced, is passed through
First inductance LpWith the first electric capacity CpThe first resonator, filter module that parallel connection is formed obtains electric energy, by magnetic field to power supply receiving terminal
RxElectric energy is transmitted, and by the first electric capacity CpRealize reactive-load compensation；
The power supply receiving terminal RxPass through the second inductance LsThe pickup of the electric energy is realized, and by the second electric capacity CsRealize idle benefit
Repay, through the second inductance LsWith the second electric capacity CsConnect formed the second resonator, filter module by the electric energy send to
Full bridge rectifier HrecIt is converted into after the second DC voltage and exports；
Output voltage adjustment circuit VregReceive the second DC voltage and be converted into silicon carbide device driving voltage.
8. the silicon carbide device driving power supply according to claim 1 or 7, it is characterised in that：Also include power supply energy control
System and protection circuit, the power supply energy control and protection circuit are to the silicon carbide device drive circuit and full bridge rectifier
HrecOutput is detected, and realizes power supply transmitting terminal TxWith power supply receiving terminal RxBetween electric energy Real-time Balancing.
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| CN109787496A (en) * | 2018-04-02 | 2019-05-21 | 浙江工业大学 | Self-excitation resonant inverter |
| CN110594985A (en) * | 2018-06-13 | 2019-12-20 | 广东美的制冷设备有限公司 | Air conditioner and integrated air conditioner controller |
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| CN107196519B (en) | 2019-07-05 |
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