CN107195651A - A kind of ISO domain structures of improvement CIS devices white pixel point - Google Patents
A kind of ISO domain structures of improvement CIS devices white pixel point Download PDFInfo
- Publication number
- CN107195651A CN107195651A CN201710496392.9A CN201710496392A CN107195651A CN 107195651 A CN107195651 A CN 107195651A CN 201710496392 A CN201710496392 A CN 201710496392A CN 107195651 A CN107195651 A CN 107195651A
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- Prior art keywords
- white pixel
- iso
- improvement
- pixel point
- domain structures
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- 230000006872 improvement Effects 0.000 title claims abstract description 18
- 238000002955 isolation Methods 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
Abstract
The present invention proposes a kind of ISO domain structures of improvement CIS devices white pixel point, including：Four polysilicon emitters above and below left and right are isolated by four finger structures；Isolate between four emitter stage groups, be connected to four finger structure.The ISO domain structures of improvement CIS devices white pixel point proposed by the present invention, for 2 finger structure isolation effects of ISO it is limited and the problem of white pixel may be influenceed, it is used to isolate four polysilicon emitters above and below left and right using four finger structures, increase isolation between four emitter stage groups simultaneously, leaked electricity with further reduce, improve white pixel performance.
Description
Technical field
Field, and more particularly to a kind of improvement CIS devices white pixel point are manufactured the present invention relates to semiconductor integrated circuit
ISO domain structures.
Background technology
Along with developing rapidly for mobile Internet, people are more and more huge to the demand of intelligent terminal, and have intelligence
The imaging sensor of the title of terminal " eyes " has also welcome unprecedented development space.Traditional ccd image sensor due to
Its power consumption is larger, and market is confined in high performance digital camera；Cmos image sensor is not only low in energy consumption, and speed is fast, and
It is easy to mutually compatible with existing semiconductor technology, production cost is relatively low, and this causes cmos image sensor to occupy image sensing
The half of the country in device market.
The direction of following cmos image sensor development is high pixel, low-power consumption, height as matter.High pixel and low-power consumption requirement
Pixel Dimensions constantly reduce, however as the continuous diminution of Pixel Dimensions, and the quality of pixel but drastically declines, particularly quantum
Efficiency and noise.Quantum efficiency refers to the ability that photon is transformed into photo-generated carrier by photodiode, and it is with the pole of photoelectricity two
The close phase light of structure of pipe, can make up that small-sized pixel quantum efficiency is low to ask by adjusting the depth of photodiode
Topic.But the reduction of noise is but very difficult.An important parameter for characterizing pixel noise is the white pixel number under half-light,
White pixel refers to those brightness relative to surrounding pixel brightness higher pixel extremely, the more images of white pixel number under half-light
Quality it is poorer.
White pixel mostlys come from metallic pollution or lattice defect in photodiode.Cmos image is reduced in technique to pass
The main method of sensor white pixel is to control the operation of the introducing, such as board end of metallic pollution and lattice defect in technical process
Part is tried one's best from the material without metallic element, and wafer is as far as possible from silicon chip with epitaxial layer, etc..Although these measure energy
The number of white pixel is enough reduced, but technical process control is extremely difficult, because very low metal ion pollution concentration just can
Cause the drastically rise of white pixel.
In 55 nanometers of UTS image sensor process are made, ISO layers of isolation effect are very big to the performance impact of device.It is special
It is not no STI techniques, if ISO structure designs are unreasonable, may result in and electric leakage is more prone between device, cause more serious
White pixel.Fig. 1 is refer to, Fig. 1 show ISO structural representations in the prior art, and general ISO techniques are 2 finger knots
Structure 10, is mainly used in completely cutting off the left and right two of same group of 4 polysilicon emitter (TX Poly) 20, isolation effect is limited.
The content of the invention
The present invention proposes a kind of ISO domain structures of improvement CIS devices white pixel point, can further reduce electric leakage, change
Kind white pixel performance.
In order to achieve the above object, the present invention proposes a kind of ISO domain structures of improvement CIS devices white pixel point, including：
Four polysilicon emitters above and below left and right are isolated by four finger structures；
Isolate between four emitter stage groups, be connected to four finger structure.
Further, isolation is made of dielectric substance between four finger structure and four emitter stage groups.
Further, isolation is made of silica material between four finger structure and four emitter stage groups.
Further, isolation structure uses B element ion implanting between four finger structure and four emitter stage groups, and it is noted
Enter energy in 10K~25KeV.
Further, the thickness of isolation structure is 200nm between four finger structure and four emitter stage groups.
Further, the spacing of the polysilicon emitter structure is 120nm.
The ISO domain structures of improvement CIS devices white pixel point proposed by the present invention, isolate for 2 finger structures of ISO
Effect is limited and the problem of may influence white pixel, is used to isolate four polysilicon emitters above and below left and right using four finger structures
Pole, while isolating between increasing by four emitter stage groups, is leaked electricity with further reduce, improves white pixel performance.
Brief description of the drawings
Fig. 1 show ISO structural representations in the prior art.
Fig. 2 show the ISO domain structure schematic diagrames of the improvement CIS devices white pixel point of present pre-ferred embodiments.
Embodiment
The embodiment of the present invention is provided below in conjunction with accompanying drawing, but the invention is not restricted to following embodiment.Root
According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simple
The form of change and use non-accurately ratio, be only used for conveniently, lucidly aid in illustrating the embodiment of the present invention purpose.
Fig. 2 is refer to, Fig. 2 show the ISO domain structures of the improvement CIS devices white pixel point of present pre-ferred embodiments
Schematic diagram.
The present invention proposes a kind of ISO domain structures of improvement CIS devices white pixel point, including：
Four polysilicon emitters 300 above and below left and right are isolated by four finger structures 100；
Isolate 200 between four emitter stage groups, be connected to four finger structure 100.
Isolate 200 according to present pre-ferred embodiments, between four finger structure 100 and four emitter stage groups using electricity Jie
Material is made.Further, isolation 200 uses silica material system between four finger structure 100 and four emitter stage groups
Into.
Isolation structure 200 uses B element ion implanting between four finger structure 100 and four emitter stage groups, and it injects
Energy is in 10K~25KeV.
The thickness of isolation structure 200 is 200nm between four finger structure 100 and four emitter stage groups.
Further, the spacing of the polysilicon emitter structure is 120nm.
In summary, the ISO domain structures of improvement CIS devices white pixel point proposed by the present invention, for ISO2 finger
Structure isolation effect is limited and the problem of may influence white pixel, is used to isolate four polycrystalline above and below left and right using four finger structures
Silicon emitter, while isolating between increasing by four emitter stage groups, is leaked electricity with further reduce, improves white pixel performance.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.Skill belonging to of the invention
Has usually intellectual in art field, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations.Cause
This, the scope of protection of the present invention is defined by those of the claims.
Claims (6)
1. a kind of ISO domain structures of improvement CIS devices white pixel point, it is characterised in that including：
Four polysilicon emitters above and below left and right are isolated by four finger structures；
Isolate between four emitter stage groups, be connected to four finger structure.
2. the ISO domain structures of improvement CIS devices white pixel point according to claim 1, it is characterised in that four hand
Refer to isolation between structure and four emitter stage groups to be made of dielectric substance.
3. the ISO domain structures of improvement CIS devices white pixel point according to claim 1, it is characterised in that four hand
Refer to isolation between structure and four emitter stage groups to be made of silica material.
4. the ISO domain structures of improvement CIS devices white pixel point according to claim 1, it is characterised in that four hand
Refer to isolation structure between structure and four emitter stage groups and use B element ion implanting, its Implantation Energy is in 10K~25KeV.
5. the ISO domain structures of improvement CIS devices white pixel point according to claim 1, it is characterised in that four hand
The thickness for referring to isolation structure between structure and four emitter stage groups is 200nm.
6. the ISO domain structures of improvement CIS devices white pixel point according to claim 1, it is characterised in that the polycrystalline
The spacing of silicon emitter structure is 120nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710496392.9A CN107195651A (en) | 2017-06-26 | 2017-06-26 | A kind of ISO domain structures of improvement CIS devices white pixel point |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710496392.9A CN107195651A (en) | 2017-06-26 | 2017-06-26 | A kind of ISO domain structures of improvement CIS devices white pixel point |
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| Publication Number | Publication Date |
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| CN107195651A true CN107195651A (en) | 2017-09-22 |
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|---|---|---|---|
| CN201710496392.9A Pending CN107195651A (en) | 2017-06-26 | 2017-06-26 | A kind of ISO domain structures of improvement CIS devices white pixel point |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1459664A (en) * | 2002-05-23 | 2003-12-03 | 柯尼卡株式会社 | Colour imaging method and digital imaging method |
| US20060019423A1 (en) * | 2004-07-26 | 2006-01-26 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing solid-state image sensor |
| CN100592528C (en) * | 2006-12-27 | 2010-02-24 | 东部高科股份有限公司 | CMOS image sensor and method for manufacturing the same |
| CN102376726A (en) * | 2010-08-09 | 2012-03-14 | 索尼公司 | Solid-state imaging device, manufacturing method thereof, and electronic apparatus |
-
2017
- 2017-06-26 CN CN201710496392.9A patent/CN107195651A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1459664A (en) * | 2002-05-23 | 2003-12-03 | 柯尼卡株式会社 | Colour imaging method and digital imaging method |
| US20060019423A1 (en) * | 2004-07-26 | 2006-01-26 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing solid-state image sensor |
| CN100592528C (en) * | 2006-12-27 | 2010-02-24 | 东部高科股份有限公司 | CMOS image sensor and method for manufacturing the same |
| CN102376726A (en) * | 2010-08-09 | 2012-03-14 | 索尼公司 | Solid-state imaging device, manufacturing method thereof, and electronic apparatus |
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Application publication date: 20170922 |