CN107188541A - It is a kind of for ceramic bases of semiconductor transducer and preparation method thereof - Google Patents
It is a kind of for ceramic bases of semiconductor transducer and preparation method thereof Download PDFInfo
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- CN107188541A CN107188541A CN201710363467.6A CN201710363467A CN107188541A CN 107188541 A CN107188541 A CN 107188541A CN 201710363467 A CN201710363467 A CN 201710363467A CN 107188541 A CN107188541 A CN 107188541A
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- semiconductor transducer
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- 239000000919 ceramic Substances 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 32
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 30
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 22
- 239000002105 nanoparticle Substances 0.000 claims abstract description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229920000459 Nitrile rubber Polymers 0.000 claims abstract description 16
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 16
- ZCJHFOLNXNSZJG-UHFFFAOYSA-N [Na].NS(O)(=O)=O Chemical compound [Na].NS(O)(=O)=O ZCJHFOLNXNSZJG-UHFFFAOYSA-N 0.000 claims abstract description 16
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 16
- 229910000428 cobalt oxide Inorganic materials 0.000 claims abstract description 16
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 16
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910001948 sodium oxide Inorganic materials 0.000 claims abstract description 16
- LCJRHAPPMIUHLH-UHFFFAOYSA-N 1-$l^{1}-azanylhexan-1-one Chemical compound [CH]CCCCC([N])=O LCJRHAPPMIUHLH-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229920002292 Nylon 6 Polymers 0.000 claims abstract description 15
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229950001919 policapram Drugs 0.000 claims abstract description 15
- 239000011787 zinc oxide Substances 0.000 claims abstract description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 229910052593 corundum Inorganic materials 0.000 claims description 13
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 239000011812 mixed powder Substances 0.000 claims description 12
- 239000011265 semifinished product Substances 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 claims 1
- -1 amido phenol Chemical compound 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 17
- 238000012546 transfer Methods 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000000835 fiber Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 3
- 229910000323 aluminium silicate Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical group O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000036301 sexual development Effects 0.000 description 1
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Abstract
It is a kind of for ceramic bases of semiconductor transducer and preparation method thereof.The substrate include alundum (Al2O3), silica, magnesia, chromium oxide, zinc oxide, policapram base phenol, to Benzenediol, N, N is to sulfamic acid sodium, cobalt oxide, sodium oxide molybdena, nano-sized carbon, nano nickel, nitrile rubber, absolute ethyl alcohol, acetone.Alundum (Al2O3), silica, magnesia, chromium oxide, zinc oxide, cobalt oxide, sodium oxide molybdena, nano-sized carbon, nano nickel are immersed in absolute ethyl alcohol and in the mixed liquor of Benzenediol, after being crushed after vacuumizing, policapram base phenol, N are added, N is to addition is 2 5cm first in the mixture of sulfamic acid sodium and acetone3/ min, improves constantly addition to complete addition, adds and melt to obtain nitrile rubber, ceramic bases are sintered to obtain after regulation viscosity.Ceramic bases heat transfer rate of the present invention is fast, light and non-friable.
Description
Technical field
The invention belongs to semiconductor transducer preparation field, and in particular to a kind of ceramic bases for semiconductor transducer
And preparation method thereof.
Background technology
Ceramic bases are because quality is slim and graceful, and heat-transfer capability is strong, is widely used in semiconductor preparation field.Should but actual
During, existing ceramic bases stability is poor, causes electronic component service life reduction, improves the use cost of electronic product,
It is not easy to the stable sexual development of industry.
The Chinese patent of application number 201210297813.2 discloses a kind of slim plate type ceramic bases of stable frequency, should
Substrate is included by the overall substrate that at least four layer plane type ceramic bases are combined into, and the overall substrate thickness is 1.2mm,
The upper surface of the overall substrate is provided with strip projected parts.The substrate thickness reaches 1.2mm, and thickness is smaller, meets customer need,
Strip projected parts are set in overall substrate, tensile stress of the binding agent to chip can be regulated and controled, the Bending Deformation of stable chip makes
Product frequency is more stablized, and the thickness reduction of overall substrate is realized by adjusting the second layer and third layer thickness,
Reducing adjustment perisphere causes can not realizing and the unstable equivalent risk of frequency for technique in encapsulation process.But the substrate is by outer
Boundary's ambient influnence is very big, and temperature is too high, and the glue for being distributed in binding agent surrounding is easily layered, and influences the operating efficiency of sensor.
The Chinese patent of application number 200880101009.4 discloses Fiber-based ceramic substrate and its manufacture method.This method
Aluminosilicate fibre is provided, with the alumina content in the range of about 15 weight % to about 72 weight %；By the fiber with comprising
Additive and the fluid mixing of inorganic bond and organic bond, to provide plastic mixture；By the plastic mixture
Form green substrate；The green substrate is heated, to remove the fluid and the organic bond；And sinter the base substrate
Substrate, makes the mullite structure of the aluminosilicate fibre and inorganic bond formation and stable amorphous glass bonding.
The content of the invention
In view of the shortcomings of the prior art, it is an object of the invention to provide a kind of ceramic bases for semiconductor transducer
And preparation method thereof, the ceramic bases conductivity of heat, resistance value is big, is difficult to puncture, is suitable as the substrate of outdoor electrical product.
To solve prior art problem, the technical scheme that the present invention takes is：
A kind of ceramic bases for semiconductor transducer, including the following component counted by weight：Alundum (Al2O3) 59-80
Part, 2-33 parts of silica 1,33-99 parts of magnesia, 1-9 parts of chromium oxide, 1-22 parts of zinc oxide, policapram base phenol 23-49
Part, to 10-24 parts of Benzenediol, N, N- is to 1-8 parts of sulfamic acid sodium, 1-8 parts of cobalt oxide, 33-49 parts of sodium oxide molybdena, nano-sized carbon 2-42
Part, 22-43 parts of nano nickel, 33-55 parts of nitrile rubber, 80-94 parts of absolute ethyl alcohol, 14-29 parts of acetone.
It is as improved, the above-mentioned ceramic bases for semiconductor transducer, including the following group counted by weight
Point：72 parts of alundum (Al2O3), 30 parts of silica, 58 parts of magnesia, 4 parts of chromium oxide, 12 parts of zinc oxide, policapram base phenol 32
Part, to 18 parts of Benzenediol, N, N- is to 4 parts of sulfamic acid sodium, 6 parts of cobalt oxide, 42 parts of sodium oxide molybdena, 31 parts of nano-sized carbon, nano nickel 34
Part, 42 parts of nitrile rubber, 88 parts of absolute ethyl alcohol, 21 parts of acetone.
It is that the mesh number of the nano-sized carbon is 200-400 mesh as improved.
The preparation method of the above-mentioned ceramic bases for semiconductor transducer, comprises the following steps：Step 1, each group is weighed
Point；Step 2, by alundum (Al2O3), silica, magnesia, chromium oxide, zinc oxide, cobalt oxide, sodium oxide molybdena, nano-sized carbon, nanometer
Nickel is immersed in absolute ethyl alcohol and obtains the first mixed powder in the mixed liquor of Benzenediol, being crushed to 200-400 mesh after vacuumizing；Step
3, by policapram base phenol, N, N- is put into reactor to sulfamic acid sodium and acetone, and heating and melting obtains second under inert gas
Mixture；Step 4, the first mixed powder is added in the second mixture, addition is 2-5cm first3/ min, increases every 2-5min
Plus addition adds to complete addition and melts to obtain nitrile rubber, regulation viscosity number 1800-2200Pas obtains semi-finished product；Step
5, semi-finished product are sintered into obtain ceramic bases.
It is that vacuum is 0.1-0.25Mpa in step 2 as improved.
It is that heating and melting temperature is 680-810 DEG C in step 3 as improved.
It is that each increased addition is 0.2-0.5cm in step 4 as improved3/min。
It is that sintering temperature is 800-830 DEG C in step 5 as improved.
Beneficial effect
Ceramic bases heat transfer rate of the present invention is fast, light, glues stickiness good and non-friable.For preparing semiconductor transducer, effectively
Ground avoids the short circuit because of overheat, and under polar environment, is difficult breakdown.
Embodiment
Embodiment 1
A kind of ceramic bases for semiconductor transducer, including the following component counted by weight：Alundum (Al2O3) 59-80
Part, 2-33 parts of silica 1,33-99 parts of magnesia, 1-9 parts of chromium oxide, 1-22 parts of zinc oxide, policapram base phenol 23-49
Part, to 10-24 parts of Benzenediol, N, N- is to 1-8 parts of sulfamic acid sodium, 1-8 parts of cobalt oxide, 33-49 parts of sodium oxide molybdena, nano-sized carbon 2-42
Part, 22-43 parts of nano nickel, 33-55 parts of nitrile rubber, 80-94 parts of absolute ethyl alcohol, 14-29 parts of acetone.
The mesh number of the nano-sized carbon is 200 mesh.
The preparation method of the above-mentioned ceramic bases for semiconductor transducer, comprises the following steps：Step 1, each group is weighed
Point；Step 2, by alundum (Al2O3), silica, magnesia, chromium oxide, zinc oxide, cobalt oxide, sodium oxide molybdena, nano-sized carbon, nanometer
Nickel is immersed in absolute ethyl alcohol and obtains the first mixed powder in the mixed liquor of Benzenediol, being crushed to 200 mesh after vacuumizing；Step 3, will
Policapram base phenol, N, N- are put into reactor to sulfamic acid sodium and acetone, and heating and melting obtains the second mixing under inert gas
Thing；Step 4, the first mixed powder is added in the second mixture, addition is 2cm first3/ min, addition is increased every 2min
To complete addition, add and melt to obtain nitrile rubber, regulation viscosity number 1800Pas obtains semi-finished product；Step 5, semi-finished product are burnt
Tie to obtain ceramic bases.
Wherein, vacuum is 0.1Mpa in step 2.
Heating and melting temperature is 680 DEG C in step 3.
Each increased addition is 0.2cm in step 43/min。
Sintering temperature is 800 DEG C in step 5.
Embodiment 2
A kind of ceramic bases for semiconductor transducer, including the following component counted by weight：72 parts of alundum (Al2O3),
30 parts of silica, 58 parts of magnesia, 4 parts of chromium oxide, 12 parts of zinc oxide, 32 parts of policapram base phenol, to 18 parts of Benzenediol, N,
N- is to 4 parts of sulfamic acid sodium, 6 parts of cobalt oxide, 42 parts of sodium oxide molybdena, 31 parts of nano-sized carbon, 34 parts of nano nickel, 42 parts of nitrile rubber, nothing
88 parts of water-ethanol, 21 parts of acetone.
The mesh number of the nano-sized carbon is 300 mesh.
The preparation method of the above-mentioned ceramic bases for semiconductor transducer, comprises the following steps：Step 1, each group is weighed
Point；Step 2, by alundum (Al2O3), silica, magnesia, chromium oxide, zinc oxide, cobalt oxide, sodium oxide molybdena, nano-sized carbon, nanometer
Nickel is immersed in absolute ethyl alcohol and obtains the first mixed powder in the mixed liquor of Benzenediol, being crushed to 300 mesh after vacuumizing；Step 3, will
Policapram base phenol, N, N- are put into reactor to sulfamic acid sodium and acetone, and heating and melting obtains the second mixing under inert gas
Thing；Step 4, the first mixed powder is added in the second mixture, addition is 3cm first3/ min, addition is increased every 4min
To complete addition, add and melt to obtain nitrile rubber, regulation viscosity number 2100Pas obtains semi-finished product；Step 5, semi-finished product are burnt
Tie to obtain ceramic bases.
Wherein, vacuum is 0.2Mpa in step 2.
Heating and melting temperature is 720 DEG C in step 3.
Each increased addition is 0.3cm in step 43/min。
Sintering temperature is 820 DEG C in step 5.
Embodiment 3
A kind of ceramic bases for semiconductor transducer, including the following component counted by weight：80 parts of alundum (Al2O3),
33 parts of silica, 99 parts of magnesia, 9 parts of chromium oxide, 22 parts of zinc oxide, 49 parts of policapram base phenol, to 24 parts of Benzenediol, N,
N- is to 8 parts of sulfamic acid sodium, 8 parts of cobalt oxide, 49 parts of sodium oxide molybdena, 42 parts of nano-sized carbon, 43 parts of nano nickel, 55 parts of nitrile rubber, nothing
94 parts of water-ethanol, 29 parts of acetone.
The mesh number of the nano-sized carbon is 400 mesh.
The preparation method of the above-mentioned ceramic bases for semiconductor transducer, comprises the following steps：Step 1, each group is weighed
Point；Step 2, by alundum (Al2O3), silica, magnesia, chromium oxide, zinc oxide, cobalt oxide, sodium oxide molybdena, nano-sized carbon, nanometer
Nickel is immersed in absolute ethyl alcohol and obtains the first mixed powder in the mixed liquor of Benzenediol, being crushed to 400 mesh after vacuumizing；Step 3, will
Policapram base phenol, N, N- are put into reactor to sulfamic acid sodium and acetone, and heating and melting obtains the second mixing under inert gas
Thing；Step 4, the first mixed powder is added in the second mixture, addition is 5cm first3/ min, addition is increased every 5min
To complete addition, add and melt to obtain nitrile rubber, regulation viscosity number 2200Pas obtains semi-finished product；Step 5, semi-finished product are burnt
Tie to obtain ceramic bases.
Vacuum is 0.25Mpa in step 2.
Heating and melting temperature is 810 DEG C in step 3.
Each increased addition is 0.5cm in step 43/min。
Sintering temperature is 830 DEG C in step 5.
Embodiment 4
A kind of ceramic bases for semiconductor transducer, including the following component counted by weight：72 parts of alundum (Al2O3),
30 parts of silica, 58 parts of magnesia, 4 parts of chromium oxide, 12 parts of zinc oxide, 32 parts of policapram base phenol, to 18 parts of Benzenediol, N,
N- is to 4 parts of sulfamic acid sodium, 6 parts of cobalt oxide, 42 parts of sodium oxide molybdena, 31 parts of nano-sized carbon, 34 parts of nano nickel, 42 parts of nitrile rubber, nothing
88 parts of water-ethanol, 21 parts of acetone.
The mesh number of the nano-sized carbon is 300 mesh.
The preparation method of the above-mentioned ceramic bases for semiconductor transducer, comprises the following steps：Step 1, each group is weighed
Point；Step 2, by alundum (Al2O3), silica, magnesia, chromium oxide, zinc oxide, cobalt oxide, sodium oxide molybdena, nano-sized carbon, nanometer
Nickel is immersed in absolute ethyl alcohol and obtains the first mixed powder in the mixed liquor of Benzenediol, being crushed to 300 mesh after vacuumizing；Step 3, will
Policapram base phenol, N, N- are put into reactor to sulfamic acid sodium and acetone, and heating and melting obtains the second mixing under inert gas
Thing；Step 4, the first mixed powder is added in the second mixture, adds and melt to obtain nitrile rubber, regulation viscosity number 2100Pa
S obtains semi-finished product；Step 5, semi-finished product are sintered into obtain ceramic bases.
Wherein, vacuum is 0.2Mpa in step 2.
Heating and melting temperature is 720 DEG C in step 3.
Sintering temperature is 820 DEG C in step 5.
Performance test
By 1-4 of the embodiment of the present invention and comparative example（The embodiment 1 of application number 200880101009.4）Substrate contrasted, institute
Obtain data as shown in the table.
It is seen from the above data that ceramic bases thermal conductivity factor of the present invention is high, stationarity is strong, thickness of thin, and anti-pressure ability is strong,
Non-friable, comparative example 2 and embodiment 4 understand that dosage blending ingredients, improve the fusion faculty between raw material, carry in batches
The high anti-pressure ability of ceramic bases so that the semiconductor transducer of preparation is more resistant to transport.Compared with comparative example, present invention ceramics
Substrate thickness is reduced, and broader field is provided for application of this ceramic bases in electronic product, and stationarity improves 2-3
Individual point.Therefore with more city's prospect.
Claims (8)
1. a kind of ceramic bases for semiconductor transducer, it is characterised in that including the following component counted by weight：Three
59-80 parts of Al 2 O, 2-33 parts of silica 1,33-99 parts of magnesia, 1-9 parts of chromium oxide, 1-22 parts of zinc oxide, poly- acetyl
23-49 parts of amido phenol, to 10-24 parts of Benzenediol, N, N- is to 1-8 parts of sulfamic acid sodium, 1-8 parts of cobalt oxide, sodium oxide molybdena 33-49
Part, 2-42 parts of nano-sized carbon, 22-43 parts of nano nickel, 33-55 parts of nitrile rubber, 80-94 parts of absolute ethyl alcohol, 14-29 parts of acetone.
2. a kind of ceramic bases for semiconductor transducer according to claim 1, it is characterised in that including pressing below
The component of parts by weight meter：72 parts of alundum (Al2O3), 30 parts of silica, 58 parts of magnesia, 4 parts of chromium oxide, 12 parts of zinc oxide,
32 parts of policapram base phenol, to 18 parts of Benzenediol, N, N- is to 4 parts of sulfamic acid sodium, 6 parts of cobalt oxide, 42 parts of sodium oxide molybdena, nano-sized carbon
31 parts, 34 parts of nano nickel, 42 parts of nitrile rubber, 88 parts of absolute ethyl alcohol, 21 parts of acetone.
3. a kind of ceramic bases for semiconductor transducer according to claim 1, it is characterised in that the nano-sized carbon
Mesh number be 200-400 mesh.
4. the preparation method based on a kind of ceramic bases for semiconductor transducer described in claim 1, it is characterised in that
Comprise the following steps：Step 1, each component is weighed；Step 2, by alundum (Al2O3), silica, magnesia, chromium oxide, oxidation
Zinc, cobalt oxide, sodium oxide molybdena, nano-sized carbon, nano nickel are immersed in absolute ethyl alcohol and in the mixed liquor of Benzenediol, being crushed after vacuumizing
The first mixed powder is obtained to 200-400 mesh；Step 3, by policapram base phenol, N, N- puts into reactor to sulfamic acid sodium and acetone
In, heating and melting obtains the second mixture under inert gas；Step 4, the first mixed powder is added in the second mixture, added first
Measure as 2-5cm3/ min, increases addition to complete addition every 2-5min, adds and melt to obtain nitrile rubber, adjust viscosity number
1800-2200Pas obtains semi-finished product；Step 5, semi-finished product are sintered into obtain ceramic bases.
5. a kind of preparation method of ceramic bases for semiconductor transducer according to claim 4, it is characterised in that
Vacuum is 0.1-0.25Mpa in step 2.
6. a kind of preparation method of ceramic bases for semiconductor transducer according to claim 4, it is characterised in that
Heating and melting temperature is 680-810 DEG C in step 3.
7. a kind of preparation method of ceramic bases for semiconductor transducer according to claim 4, it is characterised in that
Each increased addition is 0.2-0.5cm in step 43/min。
8. a kind of preparation method of ceramic bases for semiconductor transducer according to claim 4, it is characterised in that
Sintering temperature is 800-830 DEG C in step 5.
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