CN107180884A - A kind of semi-polarity AlN templates - Google Patents
A kind of semi-polarity AlN templates Download PDFInfo
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- CN107180884A CN107180884A CN201610137669.4A CN201610137669A CN107180884A CN 107180884 A CN107180884 A CN 107180884A CN 201610137669 A CN201610137669 A CN 201610137669A CN 107180884 A CN107180884 A CN 107180884A
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- 230000012010 growth Effects 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 239000010437 gem Substances 0.000 claims description 2
- 229910001751 gemstone Inorganic materials 0.000 claims description 2
- 241001062009 Indigofera Species 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 208000019901 Anxiety disease Diseases 0.000 abstract 1
- 230000036506 anxiety Effects 0.000 abstract 1
- 238000002003 electron diffraction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JXASPPWQHFOWPL-UHFFFAOYSA-N Tamarixin Natural products C1=C(O)C(OC)=CC=C1C1=C(OC2C(C(O)C(O)C(CO)O2)O)C(=O)C2=C(O)C=C(O)C=C2O1 JXASPPWQHFOWPL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000238 buergerite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000010429 evolutionary process Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of semi-polarity AlN templates, there is semi-polarity to appear face for it, and includeTwin structure orTwin structure.The semi-polarity AlN templates of the present invention can be formed directly from c surface sapphires or SiC etc. as substrate, without r surface sapphires, the fault in AlN epitaxial layers can not only be reduced, and it is with low cost, and its preparation technology is simple, growth conditions is easily controllable, the anxiety of non-secondary pollution in growth course, therefore with better quality.
Description
Technical field
The present invention is more particularly directed to a kind of semi-polarity AlN templates, belong to materials science field.
Background technology
The AlN of hexagonal wurtzite structure and its forbidden band of alloy cover 200~365nm ultraviolet spectra model
Enclose, be the ideal material for preparing DUV electrical part and Deep trench termination.However, AlN sills
Generally along polar axis-c-axis direction growth so that AlN and its alloy have very strong in [0001] direction
Piezoelectricity and spontaneous polarization.This polarity effect can be produced in higher-strength in nitride epitaxial layer
Electric field is built, causes band curvature, inclination, is spatially separated from electronics and hole, greatly reduces AlN
The luminous efficiency of base photoelectric device.Therefore people attempt to reduce polarized electric field improvement photophore by various means
Part performance.Wherein semi-polarity material due to its built in field and growth direction of principal axis it is not parallel, can be significantly
Polarity effect is reduced, therefore has obtained extensive concern.
Current top-quality semi-polarity AlN materials are scaled off from c into AlN thick films.However, utilizing
The size for the AlN materials that this method is obtained is very limited, this force researcher begin attempt to sapphire,
Extension semi-polarity AlN materials in the foreign substrate in the non-c faces such as carborundum, but this technical difficulty is heavy, and
AlN crystalline quality is very poor, dislocation density is very high, seriously constrains the efficiency of AlN base photoelectric devices.
The content of the invention
It is a primary object of the present invention to provide a kind of semi-polarity AlN templates, with overcome it is of the prior art not
Foot.
To realize aforementioned invention purpose, the technical solution adopted by the present invention includes：
The embodiments of the invention provide a kind of semi-polarity AlN templates, there is semi-polarity to appear face for it, and wrap
ContainTwin structure orTwin structure.
Further, described semi-polarity AlN templates include：AlN base materials are formed to appear on face
Twin structure orTwin structure, the AlN base materials are that [0001] is orientated, and appear face and be
OrAnd, it is formed at describedTwin structure orOn twin structure,
The AlN materials of orientation.
Further, the AlN base materials are formed on substrate.
Further, the substrate includes Sapphire Substrate, for example, be preferably c surface sapphires, but do not limit
In this.
Further, the substrate includes SiC substrate.
Further, it is describedTwin structure orIt is formed between twin structure and AlN base materials
Zigzag interface.
Further, the section of the AlN base materials is isosceles triangle, when the base angle of the triangle is
At 51 °~71 °, in the waist formation AlN of triangleTwin structure.
Further, the section of the AlN base materials is isosceles triangle, when the base angle of the triangle is
At 22 °~42 °, in the waist formation AlN of triangleTwin structure.
The embodiment of the present invention additionally provides a kind of method for preparing semi-polarity AlN templates, and it includes：In substrate
Upper growing AIN, and induce generation AlNTwin structure orTwin structure, makes AlN life
Long orientation transition isAnd then obtain semi-polarity AlN templates.
In some embodiments, the method for preparing semi-polarity AlN templates includes：
In the AlN base materials of Grown formation [0001] orientation, and the faces that appears of the AlN base materials is set to beOr
The continued growth AlN on the AlN base materials, and form AlNTwin structure or AlN
Twin structure, is changed into the AlN orientation of growth
Further, the section of the AlN base materials is isosceles triangle, when about 61 ° of the base angle of the triangle
During left and right, in the waist formation AlN of triangleTwin structure.
Further, the section of the AlN base materials is isosceles triangle, when about 32 ° of the base angle of the triangle
During left and right, in the waist formation AlN of triangleTwin structure.
In some embodiments, the method for preparing semi-polarity AlN templates includes：By c surface sapphires
Substrate is placed in hydride gas-phase epitaxy equipment, with HCl and NH3Make reacting gas, H2And N2For carrier gas,
It is 1200 DEG C~1600 DEG C to set growth temperature, and deposition forms what [0001] that thickness is 300nm~3 μm was orientated
AlN base materials, and make the faces that appears of the AlN base materials beOr
Compared with prior art, beneficial effects of the present invention at least that：
(1) semi-polarity AlN templates of the invention directly can be used as substrate shape from c surface sapphires or SiC etc.
Into, without r surface sapphires, the fault in AlN epitaxial layers can be not only reduced, and it is with low cost,
And with better quality.
(2) preparation method of semi-polarity AlN templates of the invention can reduce the fault in AlN epitaxial layers,
And produced by being induced in AlN early growth periodsOrTwin structure, can make AlN life
Long orientation is changed into by [0001]This make it that growth window is more wide in range, growth conditions is more easy to control,
One step growth is only needed simultaneously, without changing growth conditions, with regard to follow-up AlN can be made to keep edgeHalf-shadow
Property direction growth, so as to avoid secondary pollution, be conducive to obtaining high-quality semi-polarity AlN templates.
Brief description of the drawings
Fig. 1 a are 2 θ of XRD/ω scanning figures that AlN thick films are obtained in one embodiment of the invention；
Fig. 1 b are the TEM sectional views that AlN thick films are obtained in one embodiment of the invention；
Fig. 1 c are the SEAD figures of the layer of sawtooth shown in Fig. 1 b；
Fig. 1 d and Fig. 1 e are crystal column A, B SEAD figure respectively；
Fig. 2 a are sawtooth layer and the enlarged drawing of prismatic layer interface in one embodiment of the invention；
Fig. 2 b are sawtooth layer and the SEAD at prismatic layer left and right side interface in one embodiment of the invention
Figure；
Fig. 2 c are the high resolving electron diffraction figures on right side interface shown in Fig. 2 b；
Fig. 2 d are the high resolving electron diffraction figures in left side interface shown in Fig. 2 b；
Fig. 3 is ECS (Equilibrium Crystal Shape) illustraton of model in one embodiment of the invention；
Fig. 4 a are the XRD of the AlN thick films of laterally overgrown in SiC substrate in another embodiment of the present invention
2 θ/ω scanning figures；
Fig. 4 b are the TEM sections pictures of AlN thick films；
Fig. 4 c- Fig. 4 d are respectively the SEAD and high-resolution transmitted electron image at left side interface；
Fig. 4 e- Fig. 4 f are respectively the SEAD and high resolving electron diffraction picture at right side interface；
Fig. 5 a are the section pictures of AlN thick films；
Fig. 5 b are 2 θ of XRD/ω scanning figures of AlN thick films；
Fig. 5 c- Fig. 5 d are respectively the SEAD figure at left and right side interface；
Fig. 5 e are the high resolving electron diffraction pictures at interface between triangle and crystal column；
Fig. 6 a- Fig. 6 b are to pass through respectivelyTwin realizes the schematic diagram of semi-polarity AlN growths.
Embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.
The better embodiment of the present invention is given in accompanying drawing.But, the present invention can pass through many different forms
To realize, however it is not limited to embodiment disclosed below.On the contrary, providing the purpose of these embodiments
It is to make to the more thorough comprehensive of the disclosure understanding.
Unless otherwise defined, technology of all of technologies and scientific terms used here by the article with belonging to the present invention
The implication that the technical staff in field is generally understood that is identical.Art used in the description of the invention herein
Language is intended merely to describe the purpose of specific embodiment, it is not intended that in the limitation present invention.It is used herein
Term "and/or" include the arbitrary and all combination of one or more related Listed Items.
A kind of preparation method for semi-polarity AlN templates that the exemplary embodiments of the present invention are provided, including：
(1) 2 inches of c surface sapphire substrates are positioned in HVPE (hydride gas-phase epitaxy) equipment,
With HCl and NH3Make reacting gas, H2And N2For carrier gas.
(2) it is 1200 DEG C~1600 DEG C to set growth temperature, and [0001] orientation of 300nm~3 μm is deposited first
AlN base materials, the face that appears of the AlN base materials isOr
(3) if the section of above-mentioned AlN base materials is isosceles triangle, if the base angle of triangle is 61 ° or so,
In the waist formation AlN of triangleTwin structure；If the base angle of triangle is 32 ° or so, in triangle
The waist formation AlN of shapeTwin structure.
(4) characteristic of crystal growth orientation can be changed based on twin, according to geometrical relationship, no matter which forms
A kind of twin, the AlN orientation of growth can be changed intoContinued growth just can be with this basis
Obtain semi-polarity AlN templates.
Refer in Fig. 1 a- Fig. 1 d, the embodiment of the present invention, AlN thick films from c to grown on sapphire,
Pass throughTwin growth pattern, the orientation of growth is transformed into by initial [0001]Wherein,
Fig. 1 a are 2 θ of XRD/ω scanning figures of the AlN thick films, and Fig. 1 b are that the TEM of the AlN thick films is cut
Face figure, it can be seen that AlN thick films include sawtooth layer and prismatic layer.Fig. 1 c are the choosings of the layer of sawtooth shown in Fig. 1 b
Area's electron diffraction diagram.Fig. 1 d and Fig. 1 e are crystal column A, B SEAD figure respectively.
It is sawtooth layer and the enlarged drawing of prismatic layer interface in the present embodiment to refer to Fig. 2 a again.Fig. 2 b are these
Sawtooth layer and the SEAD figure at prismatic layer left and right side interface in embodiment, the two interfaces areTwin boundary.Fig. 2 c are the high resolving electron diffraction pictures on right side interface shown in Fig. 2 b, are illustrated herein
ForCoherence twin boundary.Fig. 2 d are the high resolving electron diffraction pictures in left side interface shown in Fig. 2 b, are said
It is bright to be hereinNon- coherence twin boundary.
In the present invention, causing the key point of crystal growth orientation transition isThe formation of twin boundary.By
InTwin boundary beAppear what is formed on face, thus generation first layer sawtooth layer be must
Want.During this, the surface free energy of crystal face is relevant with growth temperature, for example, the table of some crystal face
Face free energy is as follows：
Wherein γ (m, T) is the surface free energy of unit area, and it is temperature T and crystal orientation m function.
Refer to Fig. 3 and show the evolutionary process that crystal growth is varied with temperature.Wherein, for blue in c faces
The AlN grown on jewel, when growth temperature is sufficiently high, the surface free energy of (0001) crystal face is minimum,
Therefore turn into and appear face.When temperature drop, the surface free energy of crystal face can decline.If growth temperature
Reduce to a certain extent,The surface free energy of crystal face can be less thanCrystal face.Now
Although showing that crystal grain still grows along [0001] direction, it has no longer been (0001) crystal face that it, which appears face,.Especially
It is, in the present embodiment, when growth temperature is less than 1390 DEG C,Crystal face substitution (0001) is brilliant
Face, which turns into, appears face.The actual growth temperature of this sample is 1300 DEG C, less than 1390 DEG C of critical value.Refer to
A-d shows ECS in the present embodiment (Equilibrium Crystal Shape) model in Fig. 3.In the Fig. 3, a
Show that AlN grows along [0001] direction when growth temperature is sufficiently high, and appear face for (0001)
Crystal face, b shows that when growth temperature is reduced other crystal faces gradually replace (0001) to turn into and appear face,
C show when temperature be less than 1390 DEG C when,Crystal face, which turns into, appears face, and d is shown
Appear and form on the basis of faceTwin boundary.
And then, if AlN continuesAppear on face grow, its c direction be no longer along z to.Obviously,
If follow-up crystal changes the orientation of growth, high-angle boundary will certainly be formed, and this will dramatically increase crystal
Energy.With common Grain-Boundary Phase ratio, the energy of twin boundary is considerably lower.In fact, the energy of coherence twin boundary
Amount only has the 1/10 of common crystal boundary energy, and the energy of non-coherence twin boundary is the 1/2 of common crystal boundary energy.Therefore,
Appearing formation twin boundary on face can make the energy of crystal keep minimum, so that crystal is most stable.
Possible twin structure has in buergerite systemWithTwin.Appear
Face is existed forThe formation of twin provides the foundation.It is preferred that,Appear shape on face
IntoTwin plane, can both make crystal keep minimum energy, maintain stable structure, also meet existing
Geometrical condition.
In another embodiment of the invention, foregoing Sapphire Substrate also can be replaced SiC substrate.Refer to
Fig. 4 a are 2 θ of XRD/ω scanning figures of the AlN thick films of laterally overgrown on sic substrates in the present embodiment,
Show the sample at the same comprising (0001) andCrystal orientation.Fig. 4 b show the TEM of AlN thick films
Section picture；Fig. 4 c- Fig. 4 d are respectively the SEAD and high-resolution transmitted electron image at left side interface；Figure
4e- Fig. 4 f are respectively the SEAD and high resolving electron diffraction picture at right side interface, and two interfaces areTwin boundary.Fig. 5 a are the cross-sectional images that the present embodiment obtains AlN thick films.Fig. 5 b are described
2 θ of XRD of AlN thick films/ω scanning figures, show in the sample simultaneously containing (0001) andIt is brilliant
To.Fig. 5 c- Fig. 5 d are respectively the SEAD image at left and right side interface, and illustrate to be initially formed isTwin boundary.Fig. 5 e are the high resolving electron diffraction pictures at interface between triangle and crystal column, are further illustrated
FormCoherence twin boundary.
The method that the present invention is provided has using twin structure by making AlN produce twin structure and changes crystal
The characteristic of the orientation of growth, passes through respectively refering to shown in Fig. 6 a- Fig. 6 bTwin is realized
The schematic diagram of semi-polarity AlN growths.When appearance in AlNOrAfter twin structure, AlN
The orientation of growth be changed into naturally by [0001]Keep growth conditions constant, subsequently can both obtainThe semi-polarity AlN templates of orientation, the pollution that many one-step growths can be avoided to cause sample again.Also,
The growth course can directly select c surface sapphires with low cost without expensive r surface sapphires, favorably
In the high-quality semi-polarity AlN templates of acquisition.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, above in conjunction with accompanying drawing pair
The embodiment of the present invention is described in detail.Elaborated in superincumbent description many details with
It is easy to fully understand the present invention.But the present invention can come real to be much different from other manner described above
Apply, those skilled in the art can make similar improvements without departing from the spirit of the invention, therefore this hair
It is bright not limited by particular embodiments disclosed above.Also, each technical characteristic of embodiment described above can
Arbitrarily to be combined, to make description succinct, it is not all to each technical characteristic in above-described embodiment can
The combination of energy is all described, as long as however, the combination of these technical characteristics should all be recognized in the absence of contradiction
For be this specification record scope.From the foregoing, it is to be appreciated that, for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, a plurality of modification and improvement can also be made, these are all
Belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of semi-polarity AlN templates, it is characterised in that：There is the semi-polarity AlN templates semi-polarity to show
Show up, and includeTwin structure orTwin structure.
2. semi-polarity AlN templates according to claim 1, it is characterised in that including：It is formed at AlN
Base material appears on faceTwin structure orTwin structure, the AlN base materials are [0001]
It is orientated, and appears face and isOrAnd, it is formed at describedTwin structure orOn twin structure,The AlN materials of orientation.
3. semi-polarity AlN templates according to claim 1, it is characterised in that：The AlN base materials shape
Into on substrate.
4. semi-polarity AlN templates according to claim 3, it is characterised in that：The substrate includes indigo plant
Jewel substrate.
5. semi-polarity AlN templates according to claim 4, it is characterised in that：The Sapphire Substrate
Including c surface sapphires.
6. semi-polarity AlN templates according to claim 3, it is characterised in that：The substrate includes
SiC substrate.
7. semi-polarity AlN templates according to claim 1, it is characterised in that：It is describedTwin
Structure orZigzag interface is formed between twin structure and AlN base materials.
8. semi-polarity AlN templates according to claim 1, it is characterised in that：The AlN base materials
Section is isosceles triangle, when the base angle of the triangle is 51 °~71 °, in the waist shape of triangle
Into AlNTwin structure.
9. semi-polarity AlN templates according to claim 1, it is characterised in that：The AlN base materials
Section is isosceles triangle, when the base angle of the triangle is 22 °~42 °, in the waist shape of triangle
Into AlNTwin structure.
10. the semi-polarity AlN templates according to any one of claim 1-9, it is characterised in that described
The preparation method of semi-polarity AlN templates includes：
In the AlN base materials of Grown formation [0001] orientation, and the faces that appears of the AlN base materials is set to beOr
The continued growth AlN on the AlN base materials, and form AlNTwin structure orIt is twin
Crystal structure, is changed into the AlN orientation of growthSo as to obtain the semi-polarity AlN templates.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110233521A1 (en) * | 2010-03-24 | 2011-09-29 | Cree, Inc. | Semiconductor with contoured structure |
| CN102576663A (en) * | 2009-07-17 | 2012-07-11 | 应用材料公司 | A method of forming a Group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
| WO2015121399A1 (en) * | 2014-02-17 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
-
2016
- 2016-03-11 CN CN201610137669.4A patent/CN107180884B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102576663A (en) * | 2009-07-17 | 2012-07-11 | 应用材料公司 | A method of forming a Group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
| US20110233521A1 (en) * | 2010-03-24 | 2011-09-29 | Cree, Inc. | Semiconductor with contoured structure |
| WO2015121399A1 (en) * | 2014-02-17 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
Non-Patent Citations (2)
| Title |
|---|
| ASHWIN K. RISHINARAMANGALAM等: "Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire", 《APPLIED PHYSICS EXPRESS》 * |
| T.WIMDERER等: "Three-dimensional GaN for semipolar light emitters", 《PHYSICA STATUS SOLIDI B》 * |
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