CN107177877B

CN107177877B - Large-area electroplating source-making device

Info

Publication number: CN107177877B
Application number: CN201710574275.XA
Authority: CN
Inventors: 侯嵩; 徐建; 郭昌胜; 党云博; 吕佳佩; 万利; 张远
Original assignee: Chinese Research Academy of Environmental Sciences
Current assignee: Chinese Research Academy of Environmental Sciences
Priority date: 2017-07-14
Filing date: 2017-07-14
Publication date: 2023-03-21
Anticipated expiration: 2037-07-14
Also published as: CN107177877A

Abstract

The invention relates to the field of electroplating equipment, in particular to a large-area electroplating source-making device which comprises an anode plate, an anode wire, a cathode plate, an electroplating bath bottom lining and a semiconductor refrigerating sheet, wherein more than two partitions with the same size are arranged on the end face of the anode plate in a marking way, a single-path anode wire is arranged at the central position of each partition, the anode plate is arranged at an opening of the electroplating bath, the electroplating bath bottom lining is arranged on the upper end face of a bottom plate of the electroplating bath, the cathode plate is arranged on the lower end face of the electroplating bath, and the cathode plate is fixedly connected with the semiconductor refrigerating sheet. The invention provides a large-area electroplating source-making device, which is used for performing large-area electroplating source making by an anode dot matrix method.

Description

Large-area electroplating source-making device

Technical Field

The invention relates to the field of electroplating equipment, in particular to a large-area electroplating source-making device.

Background

The large-area screen grid ionization chamber alpha spectrometer has the advantages of high detection efficiency and large detection active area in alpha energy spectrum analysis. In the performance tests of efficiency calibration, energy resolution and the like of the screen grid ionization chamber, in order to obtain a large-area alpha radioactive source matched with the size of the ionization chamber, the source preparation method mainly adopts a high-pressure gas spraying method, a manual brush coating method and a vacuum evaporation method. The former two sample preparation methods are easy to cause cross contamination, are not easy to quantify and are difficult to standardize. The vacuum evaporation method is a physical source laying method, i.e. a sample to be measured is dissolved in a solution and poured on a sample tray, and the sample is baked by an infrared lamp in a vacuum environment. Compared with the first two sample preparation methods, the method has the advantages of difficult cross contamination and sample saving. However, when this method is used for accurate quantification, there are still disadvantages such as difficulty in correction of self-absorption and poor energy resolution.

Disclosure of Invention

The technical problem to be solved by the invention is as follows: in order to solve the defects of low efficiency and low accuracy of the existing electroplating device, the invention provides a large-area electroplating source-making device, which is used for performing large-area electroplating source making by an anode dot matrix method.

The technical scheme adopted by the invention for solving the technical problems is as follows:

a large-area electroplating source-making device comprises an anode plate, anode wires, a cathode plate, an electroplating bath bottom lining and semiconductor refrigerating sheets, wherein more than two compartments with the same size are arranged on the end face of the anode plate in a marking mode, a single-path anode wire is arranged at the center of each compartment, the anode plate is arranged at an opening of the electroplating bath, the electroplating bath bottom lining is arranged on the upper end face of a bottom plate of the electroplating bath, the cathode plate is arranged on the lower end face of the electroplating bath, and the cathode plate is fixedly connected with the semiconductor refrigerating sheets.

Specifically, the anode wire is a platinum wire.

Specifically, the anode wire is in a filament shape, a sheet shape or a coil shape.

Specifically, the bottom lining of the electroplating bath is made of polytetrafluoroethylene.

Specifically, the electroplating bath is made of organic glass.

Specifically, the cathode plate is connected with more than one semiconductor refrigeration piece in an adhesive mode.

Specifically, the cathode plate is a mirror surface stainless steel sheet.

The invention has the beneficial effects that: the invention provides a large-area electroplating source-making device, which is used for performing large-area electroplating source making by an anode dot matrix method.

Drawings

The invention is further illustrated with reference to the following figures and examples.

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a schematic lattice diagram of an anode plate of the present invention;

in the figure, 1, an anode plate, 2, an anode wire, 3, a cathode plate, 4, an electroplating bath, 5, an electroplating bath bottom lining and 6, a semiconductor refrigerating sheet.

Detailed Description

The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.

Fig. 1 is a schematic structural diagram of the present invention, and fig. 2 is a schematic lattice diagram of an anode plate of the present invention.

The utility model provides a large-area electroplating source-making device, includes anode plate 1, anode wire 2, negative plate 3, plating bath 4, plating bath end liner 5 and semiconductor refrigeration piece 6, draw on the anode plate 1 terminal surface and be equipped with more than two compartment that the size is the same, every compartment central point puts and all is equipped with a single circuit anode wire 2, the opening part of plating bath 4 is arranged in to anode plate 1, the bottom plate up end of plating bath 4 is equipped with plating bath end liner 5, the lower terminal surface of plating bath 4 is equipped with negative plate 3,

negative plate

3 and 6 fixed connection of semiconductor refrigeration piece. The anode wire 2 is a platinum wire. The anode wire 2 is in a filament shape, a sheet shape or a coil shape. The plating bath bottom lining 5 is made of polytetrafluoroethylene. The electroplating bath 4 is made of organic glass. The cathode plate 3 is connected with more than one semiconductor refrigerating sheet 6 in an adhering mode. The cathode plate 3 is a mirror surface stainless steel sheet.

The alpha radiation source is a radiation source which is basically characterized by emitting alpha ion beams. The alpha particle energy is generally 4 to 8MeV, the range in air is 2.5 to 7.5cm, and the range in solid is 10 to 20 μm. Since alpha particles have a weak ability to penetrate a substance, self-absorption of the source must be considered when designing a production alpha radiation source. For which reason the thickness of the active layer is generally not greater than the range of the alpha particles. In view of this consideration, the radiation source should be made thin and uniform in performing the alpha particle energy measurement. The existing source preparation methods have the problems of uneven thickness of radioactive sources, serious self-absorption and the like except that the existing source preparation methods are not easy to quantify. The problems can be effectively overcome by an atomic-level electroplating method and a molecular-level electrodeposition method, and the radioactive source prepared by the electroplating or electrodeposition method is very thin, has small dispersion degree of an energy spectrum, and is firmly adsorbed and not easy to fall off. Therefore, most of the alpha radioactive sources used in modern alpha spectroscopy are prepared by electroplating or electrodeposition.

The electroplating method and the electrodeposition method are generally used for preparing the alpha radioactive source, and stainless steel, aluminum, nickel, silver, platinum and gold which are well polished are used as cathodes, namely electroplating sheets, and the stainless steel is proved to be a cathode material with excellent performance and moderate price and is widely used in most experiments. The mirror surface stainless steel sheet is used, the material has a smooth and clean electroplating surface, and only a simple cleaning treatment is needed before electroplating. In order to avoid introducing excessive impurity ions, the anode wire 2 is generally made of an insoluble anode material, for example, precious metal platinum with very high chemical inertness, a radioactive source with an effective area diameter smaller than phi =10mm is generally prepared, the anode wire 2 only needs one platinum wire, and the anode wire 2 is generally made into a sheet shape larger than the diameter of the platinum wire, so that the uniformity of an electric field is ensured, and in consideration of cost reasons, the anode platinum wire is also made into a coil shape and can be used for stirring. In the preparation of small area alpha radiation sources (generally considered effective diameter phi ≦ 30 mm), this approach can be considered essentially field uniform. However, beyond this effective diameter, the radioactive material is unevenly distributed on the surface of the plating source sample due to the concentration of the electric field to the edges.

In order to solve this problem, the present solution proposes to perform electroplating by anode lattice method (as shown in fig. 2), i.e. to divide a large-area anode plate 1 into a plurality of small areas uniformly, and to set a single anode wire 2 at the center of gravity of each small area, so that the lattice anodes perform electroplating simultaneously, and although the electric field is still not uniform on a small scale, the electric field distribution is relatively uniform for the whole large-area cathode plate 3. In the design of this scheme, consider that the plating solution both probably is the aqueous phase system, probably be the organic system, consequently choose for use the polytetrafluoroethylene material of acid and alkali-resistance and organic solvent with plating bath end liner 5, still adopt transparent organic glass with plating bath 4 of plating solution contact not to make things convenient for the observation experiment phenomenon at any time.

The cathode and the anode of the device are connected with a direct current stabilized voltage power supply and can work after being arranged in a cooling device, the cooling device of the electroplating bath 4 is generally cooled by water bath, but large-area electroplating adopts a multi-anode design, the related current and voltage values are large, and the whole electrodeposition device is arranged in the water bath, so that the electrode corrosion is caused, and the danger is also large. Air cooling is adopted in a laboratory, but the refrigeration effect is not ideal, the electrodeposition effect is related to the temperature, and the overheating can influence the electroplating effect on the surface of the cathode. The device adopts a method of combining electric refrigeration and refrigerator refrigeration, a semiconductor refrigeration sheet 6 is bonded on a cathode plate 3 at the bottom of an electroplating bath 4, and then the whole electroplating device is placed in a constant-temperature cold box, so that the heat is rapidly led out. Practice proves that the effect is much better than that of pure air cooling.

In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.

Claims

1. The utility model provides a large-area electroplating source-making device, characterized by, includes anode plate (1), anode wire (2), negative plate (3), plating bath (4), plating bath end liner (5) and semiconductor refrigeration piece (6), draws on the anode plate (1) terminal surface and is equipped with the same compartment of two above sizes, and every compartment central point puts and all is equipped with one way anode wire (2), and the opening part of plating bath (4) is arranged in anode plate (1), and the bottom plate up end of plating bath (4) is equipped with plating bath end liner (5), and the lower terminal surface of plating bath (4) is equipped with negative plate (3), and negative plate (3) and semiconductor refrigeration piece (6) fixed connection, anode wire (2) are the platinum silk, negative plate (3) and the bonding connection of more than one semiconductor refrigeration piece (6).

2. The large area electroplating source apparatus according to claim 1, wherein: the anode wire (2) is in a wire shape, a sheet shape or a coil shape.

3. The large-area electroplating source apparatus according to claim 2, wherein: the plating bath bottom lining (5) is made of polytetrafluoroethylene.

4. The large-area plating source apparatus according to claim 1, characterized in that: the electroplating bath (4) is made of organic glass.

5. The large area electroplating source apparatus of claim 4, wherein: the negative plate (3) is a mirror surface stainless steel sheet.