CN107171549A - A kind of DC voltage booster circuit - Google Patents
A kind of DC voltage booster circuit Download PDFInfo
- Publication number
- CN107171549A CN107171549A CN201710475977.2A CN201710475977A CN107171549A CN 107171549 A CN107171549 A CN 107171549A CN 201710475977 A CN201710475977 A CN 201710475977A CN 107171549 A CN107171549 A CN 107171549A
- Authority
- CN
- China
- Prior art keywords
- voltage
- output end
- pmos
- input
- booster circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of DC voltage booster circuit, including DC boosting module and PMOS;The input connection power input of the DC boosting module, output end connects the source electrode of the PMOS, earth terminal ground connection;The drain electrode of the PMOS connects the voltage output end of the DC voltage booster circuit, grid connection power input.The DC voltage booster circuit can realize the thorough shut-off to booster circuit rear end voltage output, it is to avoid the no-load consumption of rear end component and the defect that can not thoroughly turn off the risk that caused damage to rear end component.
Description
Technical field
The present invention relates to field of circuit technology, more particularly to a kind of DC voltage booster circuit.
Background technology
The all widely used direct current liter in LED backlight drive circuit, flashlight driving circuit and other electron product circuits
Volt circuit meets the voltage requirements that each module is different.Existing DC voltage booster circuit is after boost chip enable is closed, at it
Voltage output end remains low current toward contact, and the voltage of the low current is equal to the power input terminal voltage before not boosting, it is impossible to
Thoroughly shut-off is realized, there is the defect for the risk that caused damage to rear end component.
The content of the invention
In order to solve above-mentioned the deficiencies in the prior art, the present invention provides a kind of DC voltage booster circuit.The DC voltage booster circuit
The thorough shut-off to booster circuit rear end voltage output can be realized, it is to avoid the no-load consumption of rear end component and can not be thorough
Turn off the defect for the risk that caused damage to rear end component.
The technical problems to be solved by the invention are achieved by the following technical programs:
A kind of DC voltage booster circuit, including DC boosting module and PMOS;The input connection electricity of the DC boosting module
Source input, output end connects the source electrode of the PMOS, earth terminal ground connection;The drain electrode of the PMOS connects the DC boosting
The voltage output end of circuit, grid connection power input.
Further, the DC boosting module includes boost chip, boost inductance and storage capacitor;The boost inductance
Input connect the VIN ends of power input and the boost chip respectively, output end connects the storage capacitor respectively
The source electrode of input, the SW ends of the boost chip and the PMOS;The output end of the storage capacitor and the boosting core
It is grounded after the GND ends connection of piece.
Further, in addition to first resistor and second resistance, the input of the first resistor connects the liter respectively
The source electrode of the output end of voltage inductance, the input of the storage capacitor and the PMOS, output end connects described second respectively
The FB ends of the input of resistance and the boost chip;The GND ends of the output end of the second resistance and the boost chip connect
It is grounded after connecing.
Further, in addition to diode, the anode of the diode connects the output end of the boost inductance, negative electrode point
The source electrode of the storage capacitor, first resistor and PMOS is not connected.
Further, it is connected with electric capacity of voltage regulation between power input and the earth terminal of DC boosting module.
The present invention has the advantages that:The DC voltage booster circuit connects between DC boosting module and voltage output end
PMOS is connected to, is thoroughly closed come the voltage output end to the DC voltage booster circuit using the electrology characteristic of the PMOS
It is disconnected, it is to avoid the no-load consumption of rear end component and the defect that can not thoroughly turn off the risk that caused damage to rear end component.
Brief description of the drawings
The structure chart for the DC voltage booster circuit that Fig. 1 provides for the present invention;
The schematic diagram for the DC voltage booster circuit that Fig. 2 provides for the present invention.
Embodiment
The present invention will be described in detail with reference to the accompanying drawings and examples.
As shown in figure 1, a kind of DC voltage booster circuit, including DC boosting module and PMOS M1;The DC boosting mould
The input connection power input VBAT of block, output end connects the source S of the PMOS M1, earth terminal ground connection;It is described
PMOS M1 drain D connects the voltage output end VOUT of the DC voltage booster circuit, grid G connection power input VBAT.
The DC voltage booster circuit is connected with PMOS M1 between DC boosting module and voltage output end VOUT, utilizes institute
State PMOS M1 electrology characteristic thoroughly to be turned off come the voltage output end VOUT to the DC voltage booster circuit, it is to avoid rear end
The no-load consumption of component and the defect that can not thoroughly turn off the risk that caused damage to rear end component.
Operation principle:The source S of the PMOS M1 connects the output end of the DC boosting module, i.e. source S and inputted
Be booster voltage V1, grid G connection power input VBAT, i.e. the voltage of grid G input is supply voltage V0;When described straight
The booster voltage V1 that stream boost module is exported to the source S of the PMOS M1 gradually rises, and causes booster voltage V1 and power supply
When voltage difference between voltage V0 is more than the threshold values of the PMOS M1, source S and the drain D conducting of the PMOS M1, its
Drain D exports booster voltage V1 to voltage output end VOUT;When the DC boosting module is defeated to the source S of the PMOS M1
The booster voltage V1 gone out is gradually reduced, and causes the voltage difference between booster voltage V1 and supply voltage V0 to be less than the PMOS M1
Threshold values when, the source S and drain D of the PMOS M1 disconnect, and its drain D exports 0V magnitudes of voltage to voltage output end VOUT.
As shown in Fig. 2 the DC boosting module includes boost chip U1, boost inductance L1 and storage capacitor C1;It is described
Boost inductance L1 input connects power input VBAT and the boost chip U1 VIN ends respectively, and output end connects respectively
Connect input, the SW ends of the boost chip U1 and the PMOS M1 of the storage capacitor C1 source S;The energy storage electricity
Appearance C1 output end is grounded after being connected with the GND ends of the boost chip U1.
The DC voltage booster circuit is by controlling the Enable Pin EN of the boost chip U1 between high level and low level
Switching, it becomes possible to which the on/off electricity of boost function and the PMOS M1 to the boost chip U1 is controlled, can not only
Stable booster voltage V1 is exported, and voltage output end VOUT can also thoroughly be turned off.
Operation principle is as follows:
1. when the Enable Pin EN of the boost chip U1 is high level, including the SW ends and GND ends in the boost chip U1
Portion is turned on, and the output head grounding of the boost inductance L1 simultaneously forms boosting loop, and the current value for flowing through the boost inductance L1 is opened
Beginning gradually increases;
2. when the current value of the boost inductance L1 reaches predetermined value, including the SW ends and GND ends in the boost chip U1
Portion disconnects automatically, and the output end of the boost inductance L1 can not be grounded to form boosting loop, and the boost inductance L1 stores up itself
The electric energy deposited sends the storage capacitor C1 to, and the storage capacitor C1 is charged, and passes through the multiplicating to step 1 and 2
Booster voltage V1 is formed at the storage capacitor C1 two ends;
3. when the voltage difference between the supply voltage V0 on the booster voltage V1 and grid G in the source S of the PMOS M1 is big
When threshold values, the PMOS M1 is in saturation state, its source S and drain D conducting, voltage output end VOUT output boosting electricity
Press V1;
4. when the Enable Pin EN of the boost chip U1 is low level, the boost chip U1 stops boost action, the storage
Energy electric capacity C1 is during electric discharge, and the booster voltage V1 at its two ends is gradually reduced, the liter in the source S of the PMOS M1
When piezoelectricity presses the voltage difference between the supply voltage V0 in V1 and grid G less than threshold values, the PMOS M1 is in cut-off state,
Its source S and drain D disconnect, voltage output end VOUT output 0V magnitudes of voltage.
The input for also including first resistor R1 and second resistance R2, the first resistor R1 connects the boosting electricity respectively
Feel L1 output end, the input of the storage capacitor C1 and the PMOS M1 source S, output end connects described the respectively
The FB ends of two resistance R2 input and the boost chip U1;The output end of the second resistance R2 and the boost chip U1
GND ends connection after be grounded, for forming backfeed loop.
The DC voltage booster circuit can adjust institute by adjusting the first resistor R1 and second resistance R2 resistance ratio
The magnitude of voltage that boost chip U1 boost feedback pin FB is detected is stated, and then changes the boosting electricity of the boost chip U1 outputs
Press V1.
Also the anode including diode D1, the diode D1 connects the output end of the boost inductance L1, negative electrode difference
The source S of the input, the input of the first resistor R1 and the PMOS M1 of the storage capacitor C1 is connected, for list
To conducting, rectified action is played.
Power input VBAT and DC boosting module earth terminal(I.e. described boost chip U1 GND ends)Between connect
There is electric capacity of voltage regulation C2, for stabilizing circuit voltage.
Embodiment described above only expresses embodiments of the present invention, and it describes more specific and detailed, but can not
Therefore the limitation to the scope of the claims of the present invention is interpreted as, as long as the skill obtained using the form of equivalent substitution or equivalent transformation
Art scheme, all should fall within the scope and spirit of the invention.
Claims (5)
1. a kind of DC voltage booster circuit, it is characterised in that:Including DC boosting module and PMOS;The DC boosting module
Input connects power input, and output end connects the source electrode of the PMOS, earth terminal ground connection;The drain electrode of the PMOS connects
Connect the voltage output end of the DC voltage booster circuit, grid connection power input.
2. DC voltage booster circuit according to claim 1, it is characterised in that:The DC boosting module includes boosting core
Piece, boost inductance and storage capacitor;The input of the boost inductance connects power input and the boost chip respectively
VIN ends, output end connects the source of the input of the storage capacitor, the SW ends of the boost chip and the PMOS respectively
Pole;The output end of the storage capacitor is grounded after being connected with the GND ends of the boost chip.
3. DC voltage booster circuit according to claim 2, it is characterised in that:Also include first resistor and second resistance, institute
The input for stating first resistor connects the output end of the boost inductance, the input of the storage capacitor and the PMOS respectively
The source electrode of pipe, output end connects the input of the second resistance and the FB ends of the boost chip respectively;The second resistance
Output end be connected with the GND ends of the boost chip after be grounded.
4. DC voltage booster circuit according to claim 3, it is characterised in that:Also include diode, the sun of the diode
Pole connects the output end of the boost inductance, negative electrode connect respectively the input of the storage capacitor, the first resistor it is defeated
Enter the source electrode of end and the PMOS.
5. according to any described DC voltage booster circuit in claim 1-4, it is characterised in that:Power input and DC boosting
Electric capacity of voltage regulation is connected between the earth terminal of module.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710475977.2A CN107171549A (en) | 2017-06-21 | 2017-06-21 | A kind of DC voltage booster circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710475977.2A CN107171549A (en) | 2017-06-21 | 2017-06-21 | A kind of DC voltage booster circuit |
Publications (1)
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CN107171549A true CN107171549A (en) | 2017-09-15 |
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ID=59820391
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CN201710475977.2A Pending CN107171549A (en) | 2017-06-21 | 2017-06-21 | A kind of DC voltage booster circuit |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030117087A1 (en) * | 2000-03-17 | 2003-06-26 | Tridonicatco Gmbh & Co. Kg | Drive circuit for light-emitting diodes |
CN1649229A (en) * | 2004-01-30 | 2005-08-03 | 三美电机株式会社 | Power supply circuit and power supply control method therein |
CN205336586U (en) * | 2015-12-30 | 2016-06-22 | 深圳Tcl数字技术有限公司 | Lighting circuit and remote controller |
-
2017
- 2017-06-21 CN CN201710475977.2A patent/CN107171549A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030117087A1 (en) * | 2000-03-17 | 2003-06-26 | Tridonicatco Gmbh & Co. Kg | Drive circuit for light-emitting diodes |
CN1649229A (en) * | 2004-01-30 | 2005-08-03 | 三美电机株式会社 | Power supply circuit and power supply control method therein |
CN205336586U (en) * | 2015-12-30 | 2016-06-22 | 深圳Tcl数字技术有限公司 | Lighting circuit and remote controller |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170915 |
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RJ01 | Rejection of invention patent application after publication |