CN107162437A - A kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof - Google Patents
A kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof Download PDFInfo
- Publication number
- CN107162437A CN107162437A CN201710253963.6A CN201710253963A CN107162437A CN 107162437 A CN107162437 A CN 107162437A CN 201710253963 A CN201710253963 A CN 201710253963A CN 107162437 A CN107162437 A CN 107162437A
- Authority
- CN
- China
- Prior art keywords
- film
- crystalline state
- hosrmnzn
- doped
- bismuth ferrite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2608—Compositions containing one or more ferrites of the group comprising manganese, zinc, nickel, copper or cobalt and one or more ferrites of the group comprising rare earth metals, alkali metals, alkaline earth metals or lead
- C04B35/2633—Compositions containing one or more ferrites of the group comprising manganese, zinc, nickel, copper or cobalt and one or more ferrites of the group comprising rare earth metals, alkali metals, alkaline earth metals or lead containing barium, strontium or calcium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2641—Compositions containing one or more ferrites of the group comprising rare earth metals and one or more ferrites of the group comprising alkali metals, alkaline earth metals or lead
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62222—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/116—Deposition methods from solutions or suspensions by spin-coating, centrifugation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/768—Perovskite structure ABO3
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Compounds Of Iron (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Bismuth ferrite superlattice film and preparation method thereof is co-doped with the invention provides a kind of HoSrMnZn, is trigonal crystal structure with crystal structure, space group is R3c:H and R3m:The bismuth ferrite thin film for the different element dopings that R coexists prepares Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3/Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Superlattice film, i.e. HoSrMnZn are co-doped with bismuth ferrite superlattice film.The present invention uses sol gel process, and uses spin coating and layer by layer annealing method, and equipment requirement is simple, and film, and chemical constituent controllable precise are suitably prepared on big surface and surface in irregular shape, can improve BiFeO3The multi-ferrum property of film.
Description
Technical field
The invention belongs to field of functional materials, the FTO/glass substrate surfaces being related in functionalization prepare HoSrMnZn and are total to
Mix bismuth ferrite superlattice film, specially Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3/
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Superlattice film.
Background technology
BiFeO3It is one of a small number of single phase multi-iron materials, the perovskite structure (belonging to R3c point groups) with distortion, by standing
A kind of oblique hexagonal structure for deviateing preferable perovskite structure formed by square structure along (111) direction stretching, at room temperature simultaneously
With ferroelectric order and antiferromagnetic order, due to higher ferroelectric transition temperature (Tc=1103K) and magnetic phase transition temperature (TN
=643K), in magnetoelectric transducer, spin electric device has wide practical use and paid close attention in terms of memory.But
It is, BiFeO3The problem of being primarily present following several respects, such as leakage current are big, residual polarization is small, magnetic is weak, magnetoelectric effect
It is weak etc., largely limit its application.
Superlattices are by the periodic structure of two or more different materials layered arrangement in a dimension, its cycle
It is necessarily less than the mean free path of electronics, each layer of thickness only has several nanometers or tens nanometers, substantially atomic distance
Magnitude, the number of plies is by several layers of to hundreds of layers.Wherein modulation doping superlattices are to mix various concentrations regularly in same material
Impurity, in difference of the interface due to fermi level, charge migration can be produced, can band bend；Can be super by changing
The surface chemistry environment of lattice film carrys out control interface structure, can significantly improve the electrical properties at interface.By using super crystalline substance
The physical effect such as the stress of lattice film or strain, layer coupling, can obtain many iron that high-performance or single structure material do not have
Performance.Superlattices can not only strengthen the property that its single constituent element has, and can also realize the property that single constituent element does not have.
From the point of view of symmetry, though each constituent element is all centrosymmetric, but because interface both sides are different material constituent elements,
It can provide inversion symmetry broken scarce condition, also, the strain of interface can provide or strengthen ferroelectricity sequence again.Enter one
Step is said, the spin sequence of novelty may be obtained by the layer coupling at design interface.These are Development of Novel multiferroic superlattices
Artificial material provides new possibility.
At present, also not on Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3/
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3The relevant report of superlattice film and preparation method thereof.
The content of the invention
Bismuth ferrite superlattice film and preparation method thereof, the party are co-doped with it is an object of the invention to provide a kind of HoSrMnZn
Method equipment requirement is simple, and experiment condition is easily reached, doping is easily controlled, and obtained HoSrMnZn is co-doped with bismuth ferrite superlattices
Film is Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3/Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Superlattice film,
BiFeO can be improved3The multi-ferrum property of base film.
To achieve these goals, the present invention is adopted the following technical scheme that：
A kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film, if the HoSrMnZn be co-doped with bismuth ferrite superlattice film by
The crystalline state Bi of the spaced arrangement of dried layer0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film is sequentially overlapped composition.
The crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film is water chestnut side's perovskite structure of distortion, tripartite
Phase R3m:R and R3c:H space groups coexist；Crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film is the water chestnut side of distortion
Perovskite structure, tripartite's phase R3m:R and R3c:H space groups coexist.
The crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3The number of plies of film is respectively 5~10 layers, per layer crystal state
Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3The thickness of film
Spend for 30~40nm.
The gross thickness that HoSrMnZn is co-doped with bismuth ferrite superlattice film is 440~550nm.
Described HoSrMnZn is co-doped with the preparation method of bismuth ferrite superlattice film, comprises the following steps：
Step 1：It is 0.94 in molar ratio:0.08:0.03:0.96:0.03:0.01 by bismuth nitrate, holmium nitrate, strontium nitrate,
Ferric nitrate, manganese acetate and zinc nitrate are dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride, obtain precursor liquid A；
It is 0.94 in molar ratio:0.08:0.03:0.95:0.03:0.02 by bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate,
Manganese acetate and zinc nitrate are dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride, obtain precursor liquid B；
Step 2：Precursor liquid A is spin-coated on FTO/glass substrates, obtained
Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Wet film, wet film toasts to obtain dry film after spin coating at 190~220 DEG C, then at
Annealed in atmosphere at 540~560 DEG C, obtain crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film cooling is to room temperature, in its surface spin coating
Precursor liquid B, obtains Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Wet film, wet film is toasted after spin coating at 190~220 DEG C
Dry film is obtained, is annealed in atmosphere at 540~560 DEG C, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3It is thin
Crystalline state Bi is prepared on film0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film；
Step 4：Repeat step 2 and step 3, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Made on film
It is standby go out crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film, then in crystalline state
Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Crystalline state Bi is prepared on film0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3It is thin
Film, so circulation obtain HoSrMnZn and are co-doped with bismuth ferrite superlattice film until reaching required thickness.
The total concentration of metal ion is 0.1~0.5mol/L in precursor liquid A and precursor liquid B in the step 1.
Ethylene glycol monomethyl ether and the volume ratio of acetic anhydride are (1~5) in the precursor liquid A and precursor liquid B:1.
The step 2 first cleans up FTO/glass substrates before carrying out, then irradiates under ultraviolet light, until FTO/
Glass substrate surfaces reach atomic cleanliness degree.
Spin coating rotating speed in the step 2 and step 3 during spin coating is 3800~4200r/min, spin coating time is 12~
18s。
Baking time in the step 2 and step 3 after spin coating is 7~10min.
Annealing time in the step 2 and step 3 is 8~10min.
Relative to prior art, the invention has the advantages that：
The HoSrMnZn that the present invention is provided is co-doped with the preparation method of bismuth ferrite superlattice film, with bismuth nitrate, holmium nitrate, nitre
Sour strontium, ferric nitrate, manganese acetate and zinc nitrate are raw material, and the mixed of ethylene glycol monomethyl ether and acetic anhydride is dissolved in respectively by certain mol ratio
Close in solution, obtain the precursor liquid A and precursor liquid B of the stabilization of two kinds of difference Zn doping concentrations；It is first enterprising in substrate with precursor liquid A
Row spin coating, prepares by annealing a layer crystal state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film, on the basis of this film
Spin coating is carried out with precursor liquid B again, second layer crystalline state Bi is prepared by annealing0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, such as
This analogizes, and repeats spin coating precursor liquid A and precursor liquid B and anneals layer by layer, alternating prepares crystalline state
Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, i.e.,
Obtain HoSrMnZn and be co-doped with bismuth ferrite superlattice film.The present invention uses sol-gel technology, passes through alkaline earth element Sr, rare earth
Element Ho and the element codope of transition metal Mn and Zn tetra- prepare HoSrMnZn and are co-doped with bismuth ferrite superlattice film.Compared to
Other prepare the method for film, and present device requirement is simple, and experiment condition is easily reached, with low cost, and reaction is easily carried out,
Technical process temperature is low, and preparation process and doping are easily controlled, and is suitably made on big surface and surface in irregular shape
Standby film, it is easy to mix some trace elements, the equal of atom or molecular level can be obtained in a short time equal and quantitative
Even property, HoSrMnZn made from this method is co-doped with bismuth ferrite superlattice film uniformity preferably, and chemical constituent controllable precise.
The present invention prepares a kind of HoSrMnZn of successively alternating growth by sol-gel process and is co-doped with bismuth ferrite superlattices
Film, ferroelectric superlattice be on the basis of the condition such as structure, composition, thickness (under nm yardsticks), lamination cycle of control material,
The extension Ferroelectric Multilayers obtained by the different thin-film material alternating growth of two or more performance, due to composition superlattices
Thin-film material lattice parameter difference, total can produce certain extension strain, so as to influence each layer and whole super
The performance of lattice system.It can improve the performance of original film using this phenomenon or obtain the new work(that single film does not have
Can, therefore ferroelectric superlattice material has important application prospect.Superlattice film can be each excellent by correlation function material
Property organically coupled by interface, can by using the physical effect such as the stress of superlattice film or strain, layer coupling
Obtain the multi-ferrum property that high-performance or single structure material do not have；By changing surface chemistry environment come control interface structure,
The electrical properties at interface can be significantly improved；Ferroelectric superlattice results in big Jie compared to original ferroelectric thin film
Electric constant, enhanced ferroelectric properties etc.；In addition, the interfacial effect inside superlattice film can hinder electronics or hole in electricity
Transmission under field action, further improves the insulating properties of superlattice film, and further reduces leakage current density, improves film
Multi-ferrum property.
It is by the crystalline state of two kinds of difference Zn doping concentrations that HoSrMnZn prepared by the present invention, which is co-doped with bismuth ferrite superlattice film,
Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film is mutual
The superlattice structure formed by is alternately prepared, than the BiFeO of single structure3Film has more superior multi-ferrum property, can
Improve BiFeO3The multi-ferrum property of base film.
Further, the present invention uses the different component bismuth ferrite thin film group of the similar water chestnut side's perovskite structure of crystal structure
Superlattice film is built, i.e., with tripartite's phase R3m:R and R3c:H space groups coexist
Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and tripartite's phase R3m:R and R3c:H space groups coexist
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film alternate combinations construct HoSrMnZn and are co-doped with bismuth ferrite superlattice film,
That is Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3/Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Superlattice film, can be with
Improve BiFeO3The multi-ferrum property of base film.
Brief description of the drawings
Fig. 1 is the XRD that HoSrMnZn prepared by the present invention is co-doped with bismuth ferrite superlattice film；
Fig. 2 is the Raman figure that HoSrMnZn prepared by the present invention is co-doped with bismuth ferrite superlattice film.
Embodiment
The present invention is described further with currently preferred specific embodiment below in conjunction with the accompanying drawings, raw material is analysis
It is pure.
Embodiment 1
Step 1：By raw material of bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate, (bismuth nitrate is excessive
5%) it is in molar ratio, 0.94:0.08:0.03:0.96:0.03:0.01 is dissolved in volume ratio for 3:1 ethylene glycol monomethyl ether and acetic acid
In the mixed solution of acid anhydride, the precursor liquid A for the stabilization that metal ion total concentration is 0.3mol/L is obtained；
Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw material (bismuth nitrate excessive 5%), press
Mol ratio is 0.94:0.08:0.03:0.95:0.03:0.02 is dissolved in volume ratio for 3:1 ethylene glycol monomethyl ether and acetic anhydride it is mixed
Close in solution, obtain the precursor liquid B for the stabilization that metal ion total concentration is 0.3mol/L；
Step 2：FTO/glass substrates are cleaned up, then irradiated under ultraviolet light, until FTO/glass substrate surfaces
Atomic cleanliness degree is reached, then precursor liquid A is spin-coated on FTO/glass substrates, its spin coating rotating speed is 4000r/min, spin coating
Time is 15s, obtains Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Wet film, wet film toasts 8min at 210 DEG C and obtains dry film,
Anneal 9min in atmosphere at 550 DEG C again, produces crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film cooling is to room temperature, in its surface spin coating
Precursor liquid B, its spin coating rotating speed is 4000r/min, and spin coating time is 15s, is obtained
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Wet film, wet film toasts 8min at 210 DEG C and obtains dry film, then at 550 DEG C
Anneal 9min in air, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Crystalline state is prepared on film
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film；
Step 4：Repeat step 2 and 3, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Prepared on film
Crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film, then in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3
Crystalline state Bi is prepared on film0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, until prepare each 7 layers every layer 30~
Spaced crystalline state Bi thick 40nm0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, that is, obtain HoSrMnZn and be co-doped with bismuth ferrite superlattice film.
The thing phase composition structure that HoSrMnZn is co-doped with bismuth ferrite superlattice film is determined using x-ray diffractometer；Use FE-
SEM determines the microscopic appearance that HoSrMnZn is co-doped with bismuth ferrite superlattice film；With Radiant Multiferroic instrument tests
HoSrMnZn is co-doped with the ferroelectric properties of bismuth ferrite superlattice film, and bismuth ferrite is co-doped with Agilent B2901A tests HoSrMnZn
The leakage current density of superlattice film.
Fig. 1 is the XRD that HoSrMnZn prepared by the embodiment of the present invention 1 is co-doped with bismuth ferrite superlattice film, and Fig. 1 a are in 2 θ
Corresponding diffraction maximum at=22.42 °, 32.09 °, 39.50 °, 45.77 ° is tripartite's phase BiFeO3(JCPDS 74-2016's)
(1-10), (100), (1-11), (200) crystal face.Illustrate in superlattice film
Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Membrane structure is water chestnut side's perovskite structure of distortion, tripartite's phase R3m:R and
R3c:H space groups coexist, and Fig. 1 b also occur in that tripartite's phase BiFeO at 2 θ=22.42 °, 32.09 °, 39.50 °, 45.77 °3
(1-10), (100), (1-11) of (JCPDS 74-2016), the diffraction maximum of (200) crystal face are corresponding, illustrate superlattice film
Middle Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3The water chestnut side's perovskite structure of membrane structure also for distortion, tripartite's phase R3m:R
And R3c:H space groups coexist, and two kinds of membrane structures do not change, but have stress between them, cause diffraction maximum
Corresponding angle has deviation.
Fig. 2 is the Raman figure that HoSrMnZn prepared by the embodiment of the present invention 1 is co-doped with bismuth ferrite superlattice film, can by Fig. 2 a
To find out Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film is in 135.2cm-1、157.1cm-1、214.3cm-1、278.8cm-1、392.3cm-1、487.8cm-1、535.5cm-1、623.3cm-1Vibration mould corresponds to A respectively1-1、A1-2、A1-3、E-3、E-6、
E-7, E-8 and E-9 vibrate mould, and can be seen that Bi by Fig. 2 b0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film A1-1、A1-
2、A1- 3, E-3, E-6, E-7, E-8 133.7cm corresponding with E-9 vibration moulds-1、155.4cm-1、209.6cm-1、280.5cm-1、
398.7cm-1、486.5cm-1、532.2cm-1、621.5cm-1Place's vibration mould, it can be seen that
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Vibration mould intensity enhancing at film low frequency, while vibration peak narrows.In height
Frequency 621cm-1The intensity of the E-9 vibration moulds of left and right is remarkably reinforced, and is produced Jahn-Teller twisted effects, is further illustrated composition
Superlattice film between can increase the distortion of structure.
Embodiment 2
Step 1：By raw material of bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate, (bismuth nitrate is excessive
5%) it is in molar ratio, 0.94:0.08:0.03:0.96:0.03:0.01 is dissolved in volume ratio for 1:1 ethylene glycol monomethyl ether and acetic acid
In the mixed solution of acid anhydride, the precursor liquid A for the stabilization that metal ion total concentration is 0.1mol/L is obtained；
Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw material (bismuth nitrate excessive 5%), press
Mol ratio is 0.94:0.08:0.03:0.95:0.03:0.02 is dissolved in volume ratio for 1:1 ethylene glycol monomethyl ether and acetic anhydride it is mixed
Close in solution, obtain the precursor liquid B for the stabilization that metal ion total concentration is 0.1mol/L；
Step 2：FTO/glass substrates are cleaned up, then irradiated under ultraviolet light, until FTO/glass substrate surfaces
Atomic cleanliness degree is reached, then precursor liquid A is spin-coated on FTO/glass substrates, its spin coating rotating speed is 3800r/min, spin coating
Time is 18s, obtains Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Wet film, wet film toasts 10min at 190 DEG C and must done
Film, then the 10min that anneals in atmosphere at 540 DEG C, produce crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film cooling is to room temperature, in its surface spin coating
Precursor liquid B, its spin coating rotating speed is 3800r/min, and spin coating time is 18s, is obtained
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Wet film, wet film toasts 10min at 190 DEG C and obtains dry film, then at 540 DEG C
Anneal 10min in air, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Crystalline state is prepared on film
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film；
Step 4：Repeat step 2 and 3, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Prepared on film
Crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film, then in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3
Crystalline state Bi is prepared on film0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, until prepare each 5 layers every layer 30~
Spaced crystalline state Bi thick 40nm0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, that is, obtain HoSrMnZn and be co-doped with bismuth ferrite superlattice film.
Embodiment 3
Step 1：By raw material of bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate, (bismuth nitrate is excessive
5%) it is in molar ratio, 0.94:0.08:0.03:0.96:0.03:0.01 is dissolved in volume ratio for 2:1 ethylene glycol monomethyl ether and acetic acid
In the mixed solution of acid anhydride, the precursor liquid A for the stabilization that metal ion total concentration is 0.2mol/L is obtained；
Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw material (bismuth nitrate excessive 5%), press
Mol ratio is 0.94:0.08:0.03:0.95:0.03:0.02 is dissolved in volume ratio for 2:1 ethylene glycol monomethyl ether and acetic anhydride it is mixed
Close in solution, obtain the precursor liquid B for the stabilization that metal ion total concentration is 0.2mol/L；
Step 2：FTO/glass substrates are cleaned up, then irradiated under ultraviolet light, until FTO/glass substrate surfaces
Atomic cleanliness degree is reached, then precursor liquid A is spin-coated on FTO/glass substrates, its spin coating rotating speed is 3900r/min, spin coating
Time is 16s, obtains Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Wet film, wet film toasts 9min at 200 DEG C and obtains dry film,
Anneal 8min in atmosphere at 560 DEG C again, produces crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film cooling is to room temperature, in its surface spin coating
Precursor liquid B, its spin coating rotating speed is 3900r/min, and spin coating time is 16s, is obtained
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Wet film, wet film toasts 9min at 200 DEG C and obtains dry film, then at 560 DEG C
Anneal 8min in air, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Crystalline state is prepared on film
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film；
Step 4：Repeat step 2 and 3, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Prepared on film
Crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film, then in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3
Crystalline state Bi is prepared on film0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, until prepare each 6 layers every layer 30~
Spaced crystalline state Bi thick 40nm0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, that is, obtain HoSrMnZn and be co-doped with bismuth ferrite superlattice film.
Embodiment 4
Step 1：By raw material of bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate, (bismuth nitrate is excessive
5%) it is in molar ratio, 0.94:0.08:0.03:0.96:0.03:0.01 is dissolved in volume ratio for 4:1 ethylene glycol monomethyl ether and acetic acid
In the mixed solution of acid anhydride, the precursor liquid A for the stabilization that metal ion total concentration is 0.4mol/L is obtained；
Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw material (bismuth nitrate excessive 5%), press
Mol ratio is 0.94:0.08:0.03:0.95:0.03:0.02 is dissolved in volume ratio for 4:1 ethylene glycol monomethyl ether and acetic anhydride it is mixed
Close in solution, obtain the precursor liquid B for the stabilization that metal ion total concentration is 0.4mol/L；
Step 2：FTO/glass substrates are cleaned up, then irradiated under ultraviolet light, until FTO/glass substrate surfaces
Atomic cleanliness degree is reached, then precursor liquid A is spin-coated on FTO/glass substrates, its spin coating rotating speed is 4100r/min, spin coating
Time is 14s, obtains Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Wet film, wet film toasts 7min at 220 DEG C and obtains dry film,
Anneal 9.5min in atmosphere at 545 DEG C again, produces crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film cooling is to room temperature, in its surface spin coating
Precursor liquid B, its spin coating rotating speed is 4100r/min, and spin coating time is 14s, is obtained
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Wet film, wet film toasts 7min at 220 DEG C and obtains dry film, then at 545 DEG C
Anneal 9.5min in air, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Crystalline state is prepared on film
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film；
Step 4：Repeat step 2 and 3, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Prepared on film
Crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film, then in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3
Crystalline state Bi is prepared on film0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, until prepare each 8 layers every layer 30~
Spaced crystalline state Bi thick 40nm0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, that is, obtain HoSrMnZn and be co-doped with bismuth ferrite superlattice film.
Embodiment 5
Step 1：By raw material of bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate, (bismuth nitrate is excessive
5%) it is in molar ratio, 0.94:0.08:0.03:0.96:0.03:0.01 is dissolved in volume ratio for 5:1 ethylene glycol monomethyl ether and acetic acid
In the mixed solution of acid anhydride, the precursor liquid A for the stabilization that metal ion total concentration is 0.5mol/L is obtained；
Using bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw material (bismuth nitrate excessive 5%), press
Mol ratio is 0.94:0.08:0.03:0.95:0.03:0.02 is dissolved in volume ratio for 5:1 ethylene glycol monomethyl ether and acetic anhydride it is mixed
Close in solution, obtain the precursor liquid B for the stabilization that metal ion total concentration is 0.5mol/L；
Step 2：FTO/glass substrates are cleaned up, then irradiated under ultraviolet light, until FTO/glass substrate surfaces
Atomic cleanliness degree is reached, then precursor liquid A is spin-coated on FTO/glass substrates, its spin coating rotating speed is 4200r/min, spin coating
Time is 12s, obtains Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Wet film, wet film toasts 8.5min at 205 DEG C and must done
Film, then the 8.59min that anneals in atmosphere at 555 DEG C, produce crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film cooling is to room temperature, in its surface spin coating
Precursor liquid B, its spin coating rotating speed is 4200r/min, and spin coating time is 12s, is obtained
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Wet film, wet film toasts 8.5min at 205 DEG C and obtains dry film, then at 555 DEG C
Anneal 8.5min in atmosphere, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Crystalline state is prepared on film
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film；
Step 4：Repeat step 2 and 3, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Prepared on film
Crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film, then in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3
Crystalline state Bi is prepared on film0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, until prepare each 10 layers every layer 30~
Spaced crystalline state Bi thick 40nm0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, that is, obtain HoSrMnZn and be co-doped with bismuth ferrite superlattice film.
Above said content is to combine specific preferred embodiment further description made for the present invention, is not
Whole or unique embodiment, those of ordinary skill in the art are by reading description of the invention to technical solution of the present invention
Any equivalent conversion taken, is that claim of the invention is covered.
Claims (10)
1. a kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film, it is characterised in that it is super brilliant that the HoSrMnZn is co-doped with bismuth ferrite
If lattice film is by the crystalline state Bi of the spaced arrangement of dried layer0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film is sequentially overlapped composition.
2. HoSrMnZn according to claim 1 is co-doped with bismuth ferrite superlattice film, it is characterised in that the crystalline state
Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film is water chestnut side's perovskite structure of distortion, tripartite's phase R3m:R and R3c:H is empty
Between point group coexist；Crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film is water chestnut side's perovskite structure of distortion, tripartite
Phase R3m:R and R3c:H space groups coexist.
3. HoSrMnZn according to claim 1 is co-doped with bismuth ferrite superlattice film, it is characterised in that the crystalline state
Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3The layer of film
Number is respectively 5~10 layers, per layer crystal state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film and crystalline state
Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3The thickness of film is 30~40nm.
4. the HoSrMnZn in claim 1-3 described in any one is co-doped with the preparation method of bismuth ferrite superlattice film, it is special
Levy and be, comprise the following steps：
Step 1：It is 0.94 in molar ratio:0.08:0.03:0.96:0.03:0.01 by bismuth nitrate, holmium nitrate, strontium nitrate, nitric acid
Iron, manganese acetate and zinc nitrate are dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride, obtain precursor liquid A；
It is 0.94 in molar ratio:0.08:0.03:0.95:0.03:0.02 by bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, acetic acid
Manganese and zinc nitrate are dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride, obtain precursor liquid B；
Step 2：Precursor liquid A is spin-coated on FTO/glass substrates, Bi is obtained0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3It is wet
Film, wet film toasts to obtain dry film after spin coating at 190~220 DEG C, is annealed in atmosphere at 540~560 DEG C, obtains crystalline state
Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film；
Step 3：By crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film cooling is to room temperature, in its surface spin coating forerunner
Liquid B, obtains Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Wet film, wet film is toasted at 190~220 DEG C after spin coating and must done
Film, anneals in atmosphere at 540~560 DEG C, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3On film
Prepare crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film；
Step 4：Repeat step 2 and step 3, i.e., in crystalline state Bi0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Prepared on film
Crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3Film, then in crystalline state Bi0.89Ho0.08Sr0.03Fe0.96Mn0.03Zn0.01O3
Crystalline state Bi is prepared on film0.89Ho0.08Sr0.03Fe0.95Mn0.03Zn0.02O3Film, is so circulated until reaching required thickness,
Obtain HoSrMnZn and be co-doped with bismuth ferrite superlattice film.
5. HoSrMnZn according to claim 4 is co-doped with the preparation method of bismuth ferrite superlattice film, it is characterised in that institute
The total concentration for stating metal ion in precursor liquid A and precursor liquid B in step 1 is 0.1~0.5mol/L.
6. HoSrMnZn according to claim 4 is co-doped with the preparation method of bismuth ferrite superlattice film, it is characterised in that institute
It is (1~5) to state ethylene glycol monomethyl ether and the volume ratio of acetic anhydride in precursor liquid A and precursor liquid B:1.
7. HoSrMnZn according to claim 4 is co-doped with the preparation method of bismuth ferrite superlattice film, it is characterised in that institute
State before step 2 is carried out and first clean up FTO/glass substrates, then irradiate under ultraviolet light, until FTO/glass substrate surfaces
Reach atomic cleanliness degree.
8. HoSrMnZn according to claim 4 is co-doped with the preparation method of bismuth ferrite superlattice film, it is characterised in that institute
Spin coating rotating speed when stating spin coating in step 2 and step 3 is 3800~4200r/min, and spin coating time is 12~18s.
9. HoSrMnZn according to claim 4 is co-doped with the preparation method of bismuth ferrite superlattice film, it is characterised in that institute
It is 7~10min to state the baking time in step 2 and step 3 after spin coating.
10. HoSrMnZn according to claim 4 is co-doped with the preparation method of bismuth ferrite superlattice film, it is characterised in that
Annealing time in the step 2 and step 3 is 8~10min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710253963.6A CN107162437B (en) | 2017-04-18 | 2017-04-18 | A kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710253963.6A CN107162437B (en) | 2017-04-18 | 2017-04-18 | A kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107162437A true CN107162437A (en) | 2017-09-15 |
| CN107162437B CN107162437B (en) | 2019-10-08 |
Family
ID=59812143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710253963.6A Active CN107162437B (en) | 2017-04-18 | 2017-04-18 | A kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107162437B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109772349A (en) * | 2017-11-13 | 2019-05-21 | 广州中国科学院沈阳自动化研究所分所 | A kind of erbium-codoped bismuth ferrite photocatalyst of solid-carrying type zinc and its preparation method and application |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101734725A (en) * | 2009-12-04 | 2010-06-16 | 华东师范大学 | Rare earth/alkaline earth metal and transition metal doped bismuth ferrite nano multiferroic material and preparation method thereof |
| KR20130143395A (en) * | 2012-06-21 | 2013-12-31 | 창원대학교 산학협력단 | A COMPOSITION OF ZN AND TI-DOPED BiFeO3 THIN FILMS AND THEIR FABRICATION METHOD THEREOF |
| CN103601250A (en) * | 2013-11-04 | 2014-02-26 | 陕西科技大学 | Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof |
| CN104478236A (en) * | 2014-12-11 | 2015-04-01 | 陕西科技大学 | Bi0.92Ho0.08Fe0.97Mn0.03O3-Zn1-xNixFe2O4 multiferroic composite film and preparation method thereof |
| CN105837196A (en) * | 2016-03-29 | 2016-08-10 | 陕西科技大学 | Bi0.92-xHo0.08AExFe0.97Mn0.03O3-Zn1-yNiyFe2O4 ferromagnetic composite film and preparation method thereof |
-
2017
- 2017-04-18 CN CN201710253963.6A patent/CN107162437B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101734725A (en) * | 2009-12-04 | 2010-06-16 | 华东师范大学 | Rare earth/alkaline earth metal and transition metal doped bismuth ferrite nano multiferroic material and preparation method thereof |
| KR20130143395A (en) * | 2012-06-21 | 2013-12-31 | 창원대학교 산학협력단 | A COMPOSITION OF ZN AND TI-DOPED BiFeO3 THIN FILMS AND THEIR FABRICATION METHOD THEREOF |
| CN103601250A (en) * | 2013-11-04 | 2014-02-26 | 陕西科技大学 | Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof |
| CN104478236A (en) * | 2014-12-11 | 2015-04-01 | 陕西科技大学 | Bi0.92Ho0.08Fe0.97Mn0.03O3-Zn1-xNixFe2O4 multiferroic composite film and preparation method thereof |
| CN105837196A (en) * | 2016-03-29 | 2016-08-10 | 陕西科技大学 | Bi0.92-xHo0.08AExFe0.97Mn0.03O3-Zn1-yNiyFe2O4 ferromagnetic composite film and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109772349A (en) * | 2017-11-13 | 2019-05-21 | 广州中国科学院沈阳自动化研究所分所 | A kind of erbium-codoped bismuth ferrite photocatalyst of solid-carrying type zinc and its preparation method and application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107162437B (en) | 2019-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104445996B (en) | Multiferroic Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3-NiFe2O4 composite film and preparation method thereof | |
| CN105837196A (en) | Bi0.92-xHo0.08AExFe0.97Mn0.03O3-Zn1-yNiyFe2O4 ferromagnetic composite film and preparation method thereof | |
| CN105271798B (en) | A kind of high-ferromagnetic can be with the Bi of ferroelectric properties0.9Er0.1Fe1‑xCoxO3Film and preparation method thereof | |
| CN104478235B (en) | A kind of multiferroic Bi0.98‑xSr0.02RExFe0.97Mn0.03O3‑CuFe2O4Composite membrane and preparation method thereof | |
| CN103044018A (en) | Method for preparing Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film via sol-gel process | |
| CN107032631B (en) | A kind of GdSrMnCo is co-doped with more iron thin films of bismuth ferrite and preparation method thereof | |
| CN105632756B (en) | A kind of spinel-type Tetragonal CuFe2O4 ferromagnetic thin films and preparation method thereof | |
| CN107117830A (en) | A kind of LaSrMnCo is co-doped with many iron thin films of bismuth ferrite and preparation method thereof | |
| CN107162437B (en) | A kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof | |
| CN107032632B (en) | A kind of HoSrMnNi is co-doped with bismuth ferrite superlattice film and preparation method thereof | |
| CN107098395B (en) | A kind of HoSrMnZn is co-doped with tripartite's bismuth ferrite superlattice film and preparation method thereof | |
| CN107245704B (en) | A kind of HoSrMnNi/HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof | |
| CN107082578B (en) | A kind of HoSrMnNi is co-doped with tripartite's bismuth ferrite superlattice film and preparation method thereof | |
| CN102659400B (en) | Method for manufacturing pyrochlore phase bismuth titanate functional films on surfaces of glass substrates | |
| CN104478228B (en) | A kind of Bi0.85‑xPr0.15AExFe0.97Mn0.03O3Ferroelectric thin film and preparation method thereof | |
| CN104478229B (en) | A kind of Bi1-xrExfe0.96co0.02mn0.02o3ferroelectric thin film and preparation method thereof | |
| CN107140849B (en) | A kind of LaSrMnCo/GdSrMnCo is co-doped with bismuth ferrite superlattice film and preparation method thereof | |
| CN107140848B (en) | A kind of GdSrMnCo is co-doped with bismuth ferrite superlattice film and preparation method thereof | |
| CN109133666B (en) | BFO-based superlattice/LSMO composite film with resistance switching effect and preparation method thereof | |
| CN107021649B (en) | A kind of LaSrMnCo is co-doped with bismuth ferrite superlattice film and preparation method thereof | |
| CN105859152B (en) | A kind of high magnetism Bi0.96Sr0.04FeO3Base/CoFe2O4Laminated film and preparation method thereof | |
| CN107082576B (en) | HoSrMnNi codoped bismuth ferrite multiferroic film and preparation method thereof | |
| CN103739019B (en) | A kind of BiFe of high remnant polarization 1-xmn xo 3ferroelectric membranc and preparation method thereof | |
| CN105837199B (en) | A kind of Bi0.96Sr0.04Fe0.98-xMnxCo0.02O3More iron thin films and preparation method thereof | |
| CN104478230A (en) | Bi[0.92-x]Ho0.08AExFe0.97Mn0.03O3 multiferroic film and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |