CN103601250A - Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof - Google Patents
Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a layer-by-layer alternatively doped low-leakage-current BiFeO3 film and a preparation method thereof. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate and nitric acid into mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution A; dissolving bismuth nitrate, ferric nitrate and samarium nitrate in mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution B; coating the precursor solution A on a FTO/glass substrate by way of spin coating, baking and annealing the FTO/glass substrate so as to obtain a Tb doped crystalline BiFeO3 film, coating the precursor solution B on the Tb doped crystalline BiFeO3 film by way of spin coating, baking and annealing the Tb doped crystalline BiFeO3 film so as to obtain a Sm doped crystalline BiFeO3 film, and alternatively preparing the Tb doped crystalline BiFeO3 film and the Sm doped crystalline BiFeO3 film on the Sm doped crystalline BiFeO3 film so as to obtain the layer-by-layer alternatively doped low-leakage-current BiFeO3 film. The method disclosed by the invention adopts a sol-gel process, and is simple in equipment requirements and suitable for preparing films on large surfaces and irregularly-shaped surfaces, and chemical components are precise and controllable.
Description
Technical field
The invention belongs to field of functional materials, be specifically related to a kind of successively alternating-doping low-leakage current BiFeO
3film and preparation method thereof.
Background technology
In recent years with BiFeO
3for the multiferroic compound system of representative, formed the research boom of a worldwide single-phase multiferroic magnetoelectric material.It at room temperature has ferroelectric order and antiferromagnetic order simultaneously, owing to having higher ferroelectric transition temperature (T
c=1103K) and magnetic phase transition temperature (T
nso BiFeO=643K),
3become the critical function material in fields such as can being widely used in microtronics, photoelectronics, integrated optics and microelectromechanical systems.
BiFeO
3the problem of film maximum is exactly low-resistivity, cannot at room temperature measure its ferroelectric property.On the one hand, traditional slow annealing technique is prepared BiFeO
3time, oxygen room is issued to running balance at high temperature annealing, and when annealing process finishes, partial oxygen room is detained wherein, forms the gathering in oxygen room, causes the skew of oxygen dosage, and this skew makes the iron valence state (Fe that fluctuates
3+be converted into Fe
2+).The fluctuation of iron valence state causes large leakage conductance, thereby makes BiFeO
3leakage current is larger, because large leakage conductance makes its ferroelectricity, cannot obtain saturated polarization by correct measurement.On the other hand, BiFeO
3the character such as the low-k itself having and low-resistivity cause and are difficult to observe ferroelectric hysteresis loop, and above-mentioned these features have all limited BiFeO widely
3the application of film.
Summary of the invention
The object of the present invention is to provide a kind of successively alternating-doping low-leakage current BiFeO
3film and preparation method thereof, the method equipment requirements is simple, and experiment condition easily reaches, the BiFeO of preparation
3uniformity of film is better, and doping is easily controlled, BiFeO
3the insulativity of film is enhanced, and leakage conductance reduces simultaneously.
In order to achieve the above object, the present invention alternating-doping low-leakage current BiFeO successively
3the preparation method of film, comprises the following steps:
1) by Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Tb (NO
3)
36H
2o is by (0.91-0.97): mol ratio 1:(0.08-0.14) is dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride and stirs, and obtains precursor liquid A; By Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Sm (NO
3)
36H
2o is by (0.90-0.97): mol ratio 1:(0.08-0.15) is dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride and stirs, and obtains precursor liquid B; Wherein, in precursor liquid A and precursor liquid B, total concentration of metal ions is 0.1～0.5mol/L;
2) precursor liquid A is spin-coated on FTO/glass substrate, then toasts to obtain dry film in 180～260 ℃, then the 8～10min that anneals at 550 ℃, obtain the crystalline state BiFeO of Tb doping
3film;
3) by the crystalline state BiFeO of Tb doping
3film cooling, at the crystalline state BiFeO of cooling rear Tb doping
3spin coating precursor liquid B on film, then toasts to obtain dry film in 180～260 ℃, then the 8～10min that anneals at 550 ℃, at the crystalline state BiFeO of Tb doping
3on film, prepare the crystalline state BiFeO of Sm doping
3film;
4) the crystalline state BiFeO adulterating at Sm
3the crystalline state BiFeO that alternately prepares Tb doping on film
3the crystalline state BiFeO of film and Sm doping
3film, obtains successively alternating-doping low-leakage current BiFeO
3film.
In described step 1) mixed solution, the volume ratio of ethylene glycol monomethyl ether and acetic anhydride is (1:1)～(4:1).
Described step 1) when preparing precursor liquid A, Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Tb (NO
3)
36H
2the mol ratio of O is 0.94:1:0.11, when preparing precursor liquid B, and Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Sm (NO
3)
36H
2the mol ratio of O is 0.91:1:0.14.
Described step 2) the precursor liquid A in is standing 24～32h before being spin-coated on FTO/glass substrate.
Precursor liquid B in described step 3) is standing 24～32h before being spin-coated on FTO/glass substrate.
Described step 2) baking time and in step 3) is 6～12min.
A kind of successively alternating-doping low-leakage current BiFeO that adopts described method to prepare
3the grain-size of film is at 50～80nm, and for hexagonal structure belongs to R3c spacer, under the high electric field of 500kV/cm, leakage current density is 10
-5a/cm
2.
Compared with prior art, the present invention has following beneficial effect:
1, the present invention selects lanthanon Tb and Sm to carry out the doping of A position, at BiFeO
3a position doping lanthanon can stablize the iron oxygen octahedra in perovskite structure, simultaneously because Tb has substituted part Bi, therefore thereby make the volatile quantity of Bi in annealing process reduce the generation in oxygen room, the effective insulativity of enhanced film, reduces leakage conductance.And the doping of A position also can destroy BiFeO to a certain extent
3periodic magnetic spirane structure in structure, so also can improve its magnetic property.And adopt in the present invention the successively mode of alternating-doping can pass through film internal interface effect, and hinder electronics or the transmission of hole under electric field action, can further reduce leakage current density.
2, at present for the preparation of BiFeO
3the method of film has a lot, as chemical Vapor deposition process (CVD), magnetron sputtering method (rf magnetron sputtering), deposition of metal organic method (MOD), metal-organic chemical vapor deposition equipment method (MOCVD), liquid phase deposition (LPD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) etc.Compare additive method, because sol-gel method (Sol-Gel method) has, do not need expensive vacuum apparatus, suitablely on large surface and surface in irregular shape, prepare film, and Sol-Gel legal system is for BiFeO
3film is temperature required low, is conducive to solve BiFeO
3the problem that Fe in film preparation process appraises at the current rate and Bi volatilizees; Be easy to doping vario-property simultaneously, can effectively control component and the structure of film, film chemical comparison of ingredients is easily controlled, and is particularly suitable for preparing multicomponent oxide film material, can accurately control stoichiometric ratio and the doping of film; Therefore, the present invention adopts Sol-Gel method to prepare successively alternating-doping low-leakage current BiFeO with the form of alternating-doping successively
3film.
3, present device requires simply, and experiment condition easily reaches, and the uniformity of film of preparation is better, and doping is easily controlled, and can increase substantially by multi-element doping the electrical property of film.This method can be prepared leakage current density under the high electric field of 500kV/cm and still remain on 10
-5a/cm
2the BiFeO of left and right
3film.
Accompanying drawing explanation
Fig. 1 is pure phase BiFeO
3successively alternating-doping low-leakage current BiFeO with embodiment 1 preparation
3the XRD figure of film; Wherein, a is pure phase BiFeO
3, b is the successively alternating-doping low-leakage current BiFeO of embodiment 1 preparation
3film;
Fig. 2 is the successively alternating-doping low-leakage current BiFeO of the embodiment of the present invention 1 preparation
3the SEM figure of film;
Fig. 3 is pure phase BiFeO
3successively alternating-doping low-leakage current BiFeO with embodiment 1 preparation
3the electric leakage flow graph of film; Wherein, a is pure phase BiFeO
3, b is the successively alternating-doping low-leakage current BiFeO of embodiment 1 preparation
3film.
Embodiment
Embodiment 1:
1) by Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Tb (NO
3)
36H
2o is dissolved in by the mol ratio of 0.94:1:0.11 in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride, stirs 2h and makes evenly, to obtain precursor liquid A; By Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Sm (NO
3)
36H
2o is to be dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride by the mol ratio of 0.91:1:0.14, stirs 2h and makes evenly, to obtain precursor liquid B; Wherein, in precursor liquid A and precursor liquid B, total concentration of metal ions is 0.3mol/L; In mixed solution, the volume ratio of ethylene glycol monomethyl ether and acetic anhydride is 3:1;
2) by the standing 24h of precursor liquid A, then the precursor liquid A after standing is spin-coated on FTO/glass substrate, then toasts to such an extent that 8min obtains dry film in 200 ℃, the 10min that then anneals at 550 ℃, obtains the crystalline state BiFeO of Tb doping
3film;
3) by the crystalline state BiFeO of Tb doping
3film cooling, and by the standing 32h of precursor liquid, at the crystalline state BiFeO of cooling rear Tb doping
3spin coating precursor liquid B on film, then obtains dry film in 200 ℃ of baking 8min; The 10min that anneals at 550 ℃ of temperature again, at the crystalline state BiFeO of Tb doping
3on film, prepare the crystalline state BiFeO of Sm doping
3film;
4) the crystalline state BiFeO adulterating at Sm
3the crystalline state BiFeO that alternately prepares Tb doping on film
3the crystalline state BiFeO of film and Sm doping
3film, obtains successively alternating-doping low-leakage current BiFeO
3film.
Adopt XRD test pure phase BiFeO
3successively alternating-doping low-leakage current BiFeO with embodiment 1 preparation
3the phase the Nomenclature Composition and Structure of Complexes (referring to Fig. 1) of film, as shown in Figure 1, successively alternating-doping low-leakage current BiFeO prepared by sol-gel method
3film has distorted perovskite structure, and for hexagonal structure belongs to R3c spacer, and there is no the appearance of impurity.
Adopt the low-leakage current BiFeO of FE-SEM test implementation example 1 preparation
3the pattern of film surface (referring to Fig. 2), the smooth densification of film surface as can be seen from Figure 2, grain-size is even at 50～80nm and size.
With Agilent B2901A test pure phase BiFeO
3low-leakage current BiFeO with embodiment 1 preparation
3the leakage conductance electric current (referring to Fig. 3) of film.As shown in Figure 3, the low electric leakage BiFeO of embodiment 1 preparation
3film has lower leakage conductance electric current, and under the electric field of 500kV/cm, leakage current density still remains on 10
-5a/cm
2left and right.
Embodiment 2:
1) by Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Tb (NO
3)
36H
2o is dissolved in by the mol ratio of 0.91:1:0.14 in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride, stirs 2h and makes evenly, to obtain precursor liquid A; By Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Sm (NO
3)
36H
2o is to be dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride by the mol ratio of 0.90:1:0.15, stirs 2h and makes evenly, to obtain precursor liquid B; Wherein, in precursor liquid A and precursor liquid B, total concentration of metal ions is 0.5mol/L; In mixed solution, the volume ratio of ethylene glycol monomethyl ether and acetic anhydride is 1:1;
2) by the standing 28h of precursor liquid A, then the precursor liquid A after standing is spin-coated on FTO/glass substrate, then toasts to such an extent that 10min obtains dry film in 180 ℃, the 8min that then anneals at 550 ℃, obtains the crystalline state BiFeO of Tb doping
3film;
3) by the crystalline state BiFeO of Tb doping
3film cooling, and by the standing 24h of precursor liquid, at the crystalline state BiFeO of cooling rear Tb doping
3spin coating precursor liquid B on film, then obtains dry film in 260 ℃ of baking 8min; The 9min that anneals at 550 ℃ of temperature again, at the crystalline state BiFeO of Tb doping
3on film, prepare the crystalline state BiFeO of Sm doping
3film;
4) the crystalline state BiFeO adulterating at Sm
3the crystalline state BiFeO that alternately prepares Tb doping on film
3the crystalline state BiFeO of film and Sm doping
3film, obtains successively alternating-doping low-leakage current BiFeO
3film.
Embodiment 3:
1) by Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Tb (NO
3)
36H
2o is dissolved in by the mol ratio of 0.97:1:0.08 in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride, stirs 2h and makes evenly, to obtain precursor liquid A; By Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Sm (NO
3)
36H
2o is to be dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride by the mol ratio of 0.97:1:0.08, stirs 2h and makes evenly, to obtain precursor liquid B; Wherein, in precursor liquid A and precursor liquid B, total concentration of metal ions is 0.1mol/L; In mixed solution, the volume ratio of ethylene glycol monomethyl ether and acetic anhydride is 4:1;
2) by the standing 32h of precursor liquid A, then the precursor liquid A after standing is spin-coated on FTO/glass substrate, then toasts to such an extent that 12min obtains dry film in 260 ℃, the 9min that then anneals at 550 ℃, obtains the crystalline state BiFeO of Tb doping
3film;
3) by the crystalline state BiFeO of Tb doping
3film cooling, and by the standing 30h of precursor liquid, at the crystalline state BiFeO of cooling rear Tb doping
3spin coating precursor liquid B on film, then obtains dry film in 180 ℃ of baking 10min; The 8min that anneals at 550 ℃ of temperature again, at the crystalline state BiFeO of Tb doping
3on film, prepare the crystalline state BiFeO of Sm doping
3film;
4) the crystalline state BiFeO adulterating at Sm
3the crystalline state BiFeO that alternately prepares Tb doping on film
3the crystalline state BiFeO of film and Sm doping
3film, obtains successively alternating-doping low-leakage current BiFeO
3film.
Embodiment 4:
1) by Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Tb (NO
3)
36H
2o is dissolved in by the mol ratio of 0.94:1:0.11 in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride, stirs 2h and makes evenly, to obtain precursor liquid A; By Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Sm (NO
3)
36H
2o is to be dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride by the mol ratio of 0.91:1:0.14, stirs 2h and makes evenly, to obtain precursor liquid B; Wherein, in precursor liquid A and precursor liquid B, total concentration of metal ions is 0.5mol/L; In mixed solution, the volume ratio of ethylene glycol monomethyl ether and acetic anhydride is 2:1;
2) by the standing 32h of precursor liquid A, then the precursor liquid A after standing is spin-coated on FTO/glass substrate, then toasts to such an extent that 12min obtains dry film in 200 ℃, the 9min that then anneals at 550 ℃, obtains the crystalline state BiFeO of Tb doping
3film;
3) by the crystalline state BiFeO of Tb doping
3film cooling, and by the standing 30h of precursor liquid, at the crystalline state BiFeO of cooling rear Tb doping
3spin coating precursor liquid B on film, then obtains dry film in 200 ℃ of baking 10min; The 8min that anneals at 550 ℃ of temperature again, at the crystalline state BiFeO of Tb doping
3on film, prepare the crystalline state BiFeO of Sm doping
3film;
4) the crystalline state BiFeO adulterating at Sm
3the crystalline state BiFeO that alternately prepares Tb doping on film
3the crystalline state BiFeO of film and Sm doping
3film, obtains successively alternating-doping low-leakage current BiFeO
3film.
The successively alternating-doping low-leakage current BiFeO that in above-described embodiment 1-4, step 4) finally makes
3film is the crystalline state BiFeO by the Tb doping of alternating deposit
3the crystalline state BiFeO of film and Sm doping
3the BiFeO of the ，Qie the superiors that film forms
3film can be the crystalline state BiFeO of Tb doping
3the crystalline state BiFeO of film or Sm doping
3film.
In above-described embodiment 1-4, step 4) is at the crystalline state BiFeO of Sm doping
3the crystalline state BiFeO that alternately prepares Tb doping on film
3the crystalline state BiFeO of film and Sm doping
3film refers to the crystalline state BiFeO in Sm doping
3first repeating step 2 on film) prepare the crystalline state BiFeO of Tb doping
3film, then repeating step 3) prepare the crystalline state BiFeO of Tb doping
3film.Repeatedly repeat the crystalline state BiFeO first adulterating at Sm
3first repeating step 2 on film) prepare the crystalline state BiFeO of Tb doping
3film, then repeating step 3) prepare the crystalline state BiFeO of Tb doping
3the operation of film.
Above-described embodiment 1-4 prepares in the process of precursor liquid A in step 1), Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Tb (NO
3)
36H
2the theoretical molar of O is than being (0.86-0.92): 1:(0.08-0.14), in the process of preparation precursor liquid B, Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Sm (NO
3)
36H
2the theoretical molar of O is than being (0.85-0.92): 1:(0.08-0.15), but due in step 2) and the step 3) process of annealing in, Bi
3+have the loss of part, therefore, Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Tb (NO
3)
36H
2o is according to (0.91-0.97): mixed in molar ratio 1:(0.08-0.14) is mixed with precursor liquid A, Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Sm (NO
3)
36H
2o is by (0.90-0.97): mixed in molar ratio 1:(0.08-0.15) is mixed with precursor liquid B's.
The present invention by Bismuth trinitrate, iron nitrate and Terbium trinitrate in molar ratio for (0.91-0.97): mol ratio 1:(0.08-0.14) is dissolved in the mixed solution (volume ratio of ethylene glycol monomethyl ether and acetic anhydride (1:1)～(4:1)) of ethylene glycol monomethyl ether and acetic anhydride, then stirring 2h makes evenly, to obtain precursor liquid A; By Bismuth trinitrate, iron nitrate and samaric nitrate by (0.90-0.97): mol ratio 1:(0.08-0.15) is dissolved in the mixed solution (volume ratio of ethylene glycol monomethyl ether and acetic anhydride (1:1)～(4:1)) of ethylene glycol monomethyl ether and acetic anhydride, then stirring 2h makes evenly, to obtain precursor liquid B; Wherein, BiFeO
3in precursor liquid, total concentration of metal ions is all 0.1-0.5mol/L; First at FTO/glass substrate, with precursor liquid A, carry out spin coating, the BiFeO of the crystalline state of one deck Tb doping is prepared in baking, annealing
3film, the BiFeO of the crystalline state of adulterating at this Tb
3on the basis of film, with precursor liquid B, carry out spin coating again, prepare by annealing the BiFeO of the crystalline state of second layer Sm doping
3film.Repeatedly preparation just can be prepared the required Tb obtaining and the composite mixed BiFeO of Sm afterwards
3film.The BiFeO of the successively alternating-doping of preparing
3film leakage current density under the high electric field of 500kV/cm still remains on 10
-5a/cm
2left and right, than pure phase BiFeO
3film has reduced by 2 orders of magnitude.Present device requires simple, and experiment condition easily reaches, and the uniformity of film of preparation is better, and doping is easily controlled, and can pass through successively alternating-doping, and doping can significantly reduce the leakage current density of film.
The foregoing is only one embodiment of the present invention, it not whole or unique embodiment, the conversion of any equivalence that those of ordinary skills take technical solution of the present invention by reading specification sheets of the present invention, is claim of the present invention and contains.
Claims (7)
1. prepare successively alternating-doping low-leakage current BiFeO for one kind
3the method of film, is characterized in that, comprises the following steps:
1) by Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Tb (NO
3)
36H
2o is by (0.91-0.97): mol ratio 1:(0.08-0.14) is dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride and stirs, and obtains precursor liquid A; By Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Sm (NO
3)
36H
2o is by (0.90-0.97): mol ratio 1:(0.08-0.15) is dissolved in the mixed solution of ethylene glycol monomethyl ether and acetic anhydride and stirs, and obtains precursor liquid B; Wherein, in precursor liquid A and precursor liquid B, total concentration of metal ions is 0.1～0.5mol/L;
2) precursor liquid A is spin-coated on FTO/glass substrate, then toasts to obtain dry film in 180～260 ℃, then the 8～10min that anneals at 550 ℃, obtain the crystalline state BiFeO of Tb doping
3film;
3) by the crystalline state BiFeO of Tb doping
3film cooling, at the crystalline state BiFeO of cooling rear Tb doping
3spin coating precursor liquid B on film, then toasts to obtain dry film in 180～260 ℃, then the 8～10min that anneals at 550 ℃, at the crystalline state BiFeO of Tb doping
3on film, prepare the crystalline state BiFeO of Sm doping
3film;
4) the crystalline state BiFeO adulterating at Sm
3the crystalline state BiFeO that alternately prepares Tb doping on film
3the crystalline state BiFeO of film and Sm doping
3film, obtains successively alternating-doping low-leakage current BiFeO
3film.
2. preparation according to claim 1 alternating-doping low-leakage current BiFeO successively
3the method of film, is characterized in that: in described step 1) mixed solution, the volume ratio of ethylene glycol monomethyl ether and acetic anhydride is (1:1)～(4:1).
3. preparation according to claim 1 alternating-doping low-leakage current BiFeO successively
3the method of film, is characterized in that: described step 1) when preparing precursor liquid A, Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Tb (NO
3)
36H
2the mol ratio of O is 0.94:1:0.11, when preparing precursor liquid B, and Bi (NO
3)
35H
2o, Fe (NO
3)
39H
2o and Sm (NO
3)
36H
2the mol ratio of O is 0.91:1:0.14.
4. preparation according to claim 1 alternating-doping low-leakage current BiFeO successively
3the method of film, is characterized in that: the precursor liquid A described step 2) is standing 24～32h before being spin-coated on FTO/glass substrate.
5. according to the alternating-doping low-leakage current BiFeO successively of the preparation described in claim 1 or 4
3the method of film, is characterized in that: the precursor liquid B in described step 3) is standing 24～32h before being spin-coated on FTO/glass substrate.
6. according to the alternating-doping low-leakage current BiFeO successively of the preparation described in claim 1 or 4
3the method of film, is characterized in that: the baking time described step 2) and in step 3) is 6～12min.
7. one kind adopts the successively alternating-doping low-leakage current BiFeO that in claim 3 or 4 prepared by the method described in any one claim
3film, is characterized in that: this is alternating-doping low-leakage current BiFeO successively
3the grain-size of film is at 50～80nm, and for hexagonal structure belongs to R3c spacer, under the high electric field of 500kV/cm, leakage current density is 10
-5a/cm
2.
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| CN104891821A (en) * | 2015-05-04 | 2015-09-09 | 桂林电子科技大学 | Method for preparing multilayer BiFeO3 film from precursor solutions with different concentrations |
| CN107021649A (en) * | 2017-04-18 | 2017-08-08 | 陕西科技大学 | A kind of LaSrMnCo is co-doped with bismuth ferrite superlattice film and preparation method thereof |
| CN107140849A (en) * | 2017-04-18 | 2017-09-08 | 陕西科技大学 | A kind of LaSrMnCo/GdSrMnCo is co-doped with bismuth ferrite superlattice film and preparation method thereof |
| CN107140848A (en) * | 2017-04-18 | 2017-09-08 | 陕西科技大学 | A kind of GdSrMnCo is co-doped with bismuth ferrite superlattice film and preparation method thereof |
| CN107162437A (en) * | 2017-04-18 | 2017-09-15 | 陕西科技大学 | A kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof |
| CN107245704A (en) * | 2017-04-18 | 2017-10-13 | 陕西科技大学 | A kind of HoSrMnNi/HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof |
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| CN104891821A (en) * | 2015-05-04 | 2015-09-09 | 桂林电子科技大学 | Method for preparing multilayer BiFeO3 film from precursor solutions with different concentrations |
| CN104891821B (en) * | 2015-05-04 | 2017-08-11 | 桂林电子科技大学 | Multilayer BiFeO is prepared using the precursor liquid of various concentrations3The method of film |
| CN107021649A (en) * | 2017-04-18 | 2017-08-08 | 陕西科技大学 | A kind of LaSrMnCo is co-doped with bismuth ferrite superlattice film and preparation method thereof |
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| CN107162437A (en) * | 2017-04-18 | 2017-09-15 | 陕西科技大学 | A kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof |
| CN107245704A (en) * | 2017-04-18 | 2017-10-13 | 陕西科技大学 | A kind of HoSrMnNi/HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof |
| CN107021649B (en) * | 2017-04-18 | 2019-06-07 | 陕西科技大学 | A kind of LaSrMnCo is co-doped with bismuth ferrite superlattice film and preparation method thereof |
| CN107162437B (en) * | 2017-04-18 | 2019-10-08 | 陕西科技大学 | A kind of HoSrMnZn is co-doped with bismuth ferrite superlattice film and preparation method thereof |
| CN107140848B (en) * | 2017-04-18 | 2019-10-11 | 陕西科技大学 | A kind of GdSrMnCo is co-doped with bismuth ferrite superlattice film and preparation method thereof |
| CN107140849B (en) * | 2017-04-18 | 2019-10-11 | 陕西科技大学 | A kind of LaSrMnCo/GdSrMnCo is co-doped with bismuth ferrite superlattice film and preparation method thereof |
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