CN107154775A - It is a kind of to improve the photovoltaic tile that light is utilized - Google Patents
It is a kind of to improve the photovoltaic tile that light is utilized Download PDFInfo
- Publication number
- CN107154775A CN107154775A CN201710318280.4A CN201710318280A CN107154775A CN 107154775 A CN107154775 A CN 107154775A CN 201710318280 A CN201710318280 A CN 201710318280A CN 107154775 A CN107154775 A CN 107154775A
- Authority
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- China
- Prior art keywords
- layer
- light
- utilized
- improve
- photovoltaic module
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 125
- 239000011241 protective layer Substances 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000149 argon plasma sintering Methods 0.000 claims abstract description 12
- 230000007704 transition Effects 0.000 claims abstract description 9
- 239000005038 ethylene vinyl acetate Substances 0.000 claims abstract description 7
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims abstract description 7
- 239000008187 granular material Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- 239000005543 nano-size silicon particle Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 241000446313 Lamella Species 0.000 description 8
- 239000004925 Acrylic resin Substances 0.000 description 7
- 229920000178 Acrylic resin Polymers 0.000 description 7
- 229920002620 polyvinyl fluoride Polymers 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N ethyl acetate Substances CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BFMKFCLXZSUVPI-UHFFFAOYSA-N ethyl but-3-enoate Chemical compound CCOC(=O)CC=C BFMKFCLXZSUVPI-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/20—Supporting structures directly fixed to an immovable object
- H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
- H02S20/23—Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
- H02S20/25—Roof tile elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The photovoltaic tile that light is utilized is improved the invention discloses a kind of, including watt matrix and photovoltaic module, watt matrix offers cavity, photovoltaic module is arranged in cavity, the photovoltaic module includes glassy layer successively from top to bottom, battery pack, backsheet layer, between glassy layer and battery pack, ethylene-vinyl acetate copolymer layer is provided between battery pack and backsheet layer, one layer of nano-silica film is coated with the glassy layer, the backsheet layer includes the outer protective layer directly contacted with the external world, intermediate layer and internal layer transition zone, light enhancement layer is also set up between outer protective layer and intermediate layer, light enhancement layer is light scattering layer or reflection layer.The present invention in glassy layer by coating one layer of nano-silica film, and light enhancement layer is set in backsheet layer, the transmissivity of sunlight is not only increased, the scattering process of the light into photovoltaic module is also increased, the light absorbing efficiency of photovoltaic module is improved, the problem of existing light is under-utilized is solved.
Description
Technical field
The present invention relates to field of solar energy, and in particular to the photovoltaic tile that a kind of raising light is utilized.
Background technology
Photovoltaic tile refers to the tile made using synthetic material (engineering material) by automating mounting process and crystal silicon too
Positive energy module is combined, and forms the tile with photovoltaic generation function.Photovoltaic tile can directly replace building tile, for building
On.It is not only that electricity can be provided for house, can also be used as the source of stabilized power source, a variety of facilities is provided for life.
In use, utilization ratio of the light in photovoltaic module be not high for existing photovoltaic tile, this and photovoltaic module sheet
The structure of body has relation.Existing photovoltaic module is after light enters in it, and what it was utilized considers seldom, it is impossible to fully to entering
Light in it is effectively absorbed, and causes the utilization rate of light very low.
The content of the invention
Present invention aims at the photovoltaic tile that a kind of raising light is utilized is provided, the photovoltaic tile passes through coats one layer in glassy layer
Nano-silica film, and light enhancement layer is set in backsheet layer, the transmissivity of sunlight is not only increased, also increases and enters light
The scattering process of the light in component is lied prostrate, light residence time in photovoltaic module is added, photovoltaic module absorption is effectively increased
The efficiency of light, solves the problem of existing light is under-utilized.
The present invention is achieved through the following technical solutions：
A kind of to improve the photovoltaic tile that light is utilized, including watt matrix and photovoltaic module, a watt matrix offers cavity, photovoltaic module
Including frame, the body being arranged in frame and the terminal box being arranged on outside frame, terminal box are connected with body, photovoltaic module
Frame is arranged in cavity, and the body includes glassy layer, battery pack, backsheet layer, glassy layer and battery pack successively from top to bottom
Between, be provided between battery pack and backsheet layer and to be coated with one layer on ethylene-vinyl acetate copolymer layer, the glassy layer and receive
Rice silicon dioxide film, the backsheet layer includes outer protective layer, intermediate layer and the internal layer transition zone directly contacted with the external world, outer layer
Light enhancement layer is also set up between protective layer and intermediate layer, light enhancement layer is light scattering layer or reflection layer.
Inventive conception is that：One layer of nano-silica film is set on glassy layer, and light is set in backsheet layer
Enhancement layer, increases the transmissivity of sunlight, and increases the scattering process of the light into photovoltaic module, improves photovoltaic module suction
The efficiency of light is received, the problem of existing light is under-utilized is solved.
Ethylene-vinyl acetate copolymer is generally EVA, and its degree of cross linking is more than 70%, and cementability is strong.
The lamellar structure is waveform.Above-mentioned lamellar structure is set to waveform, is conducive to increasing the scattering of lamella
Ability, further improves the utilization rate of light.
Light scattering layer is the lamellar structure that one layer of acrylic resin is blended with silica dioxide granule.In order to strengthen light
Utilization ratio, is provided with light enhancement layer in backsheet layer, light scattering layer be a kind of surface and it is internal can scattered light lamella
The lamella that structure, such as acrylic resin are blended with silica dioxide granule.
Reflection layer is the lamellar structure that surface is coated with coating or surface is polishing layer.This reflection layer is only in warp
It is scattered on the top layer for crossing coating or polishing, it is clear that light scatter intensity is big not as the intensity of light scattering layer.
Also include at least 2 face speculums, speculum is arranged on the fin of watt matrix, and at least 2 face speculums are divided into 2 groups of phases
The back of the body is set.2 groups of opposite speculums are set on the fin of watt matrix, are conducive to when sunlight is moved, by light collection
It is arranged on onto photovoltaic module, and due to speculum on the fin of watt matrix, will not will should be radiated at photovoltaic module
Glassy layer glazing is reflected away.
Angle between 2 groups of speculums for being disposed opposite to each other is 100-160 °.The setting of angle can be helped between 2 groups of reflectings surface
More light are helped to be reflected on photovoltaic module.
Outer protective layer and internal layer transition zone are PVF.PVF is polyvinyl fluoride, with outstanding ageing resistace, very well
Heat endurance, and also have high-wearing feature and contaminated resistance, protective layer and buffer layer material are used as using this material
There is good practicality for the photovoltaic module in work.
Intermediate layer is PET.Outer protective layer primarily serves the effect of environment resistant erosion, and intermediate layer is mainly used in insulation, interior
Layer transition zone mainly plays bonding effect with ethylene-ethyl acetate copolymer.
It is additionally provided with what one layer of acrylic resin was blended with silica dioxide granule between outer protective layer and intermediate layer
The thickness of lamella is 0.08-0.1mm.
Certainly, this photovoltaic tile is complete provided with parts such as corresponding controller for solar, battery, inverter, switch controllers
, can be to general lighting electric power supply into the function such as photovoltaic generation, energy storage and direct current and alternating current conversion.
The present invention compared with prior art, has the following advantages and advantages：
The present invention sets light enhancement layer by coating one layer of nano-silica film in glassy layer in backsheet layer, no
The transmissivity of sunlight is increase only, the scattering process of the light into photovoltaic module is also increased, photovoltaic module absorption is improved
The efficiency of light, solves the problem of existing light is under-utilized.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings：
Fig. 1 is schematic structural view of the invention.
Fig. 2 is partial schematic diagram of the present invention.
Mark and corresponding parts title in accompanying drawing：
1- watts of matrix, 11- fins, 12- speculums, 2- photovoltaic modulies, 21- glassy layers, 22- cell panels, 23- backsheet layers,
24- ethylene-ethyl acetate copolymers layer.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, with reference to embodiment and accompanying drawing, to this
Invention is described in further detail, and exemplary embodiment and its explanation of the invention is only used for explaining the present invention, does not make
For limitation of the invention.
Embodiment 1
As depicted in figs. 1 and 2, it is a kind of to improve the photovoltaic tile that light is utilized, including watt matrix 1 and photovoltaic module 2, watt matrix 1
Cavity is offered, photovoltaic module 2 is arranged in cavity, the photovoltaic module 2 includes glassy layer 21, battery pack successively from top to bottom
22nd, backsheet layer 23, ethyl vinyl acetate second is provided between glassy layer 21 and battery pack 22, between battery pack 22 and backsheet layer 23
One layer of nano-silica film is coated with alkene copolymer layer 24, the glassy layer 21, the backsheet layer 23 includes straight with the external world
Outer protective layer, intermediate layer and the internal layer transition zone of contact, also set up light enhancement layer, light between outer protective layer and intermediate layer
Enhancement layer is light scattering layer or reflection layer.
Ethylene-vinyl acetate copolymer is generally EVA, and its degree of cross linking is more than 70%, and cementability is strong.
The lamellar structure is waveform.Above-mentioned lamellar structure is set to waveform, is conducive to increasing the scattering of lamella
Ability, further improves the utilization rate of light.
Light scattering layer is the lamellar structure that one layer of acrylic resin is blended with silica dioxide granule.In order to strengthen light
Utilization ratio, is provided with light enhancement layer in backsheet layer 23, light scattering layer be a kind of surface and it is internal can scattered light piece
The lamella that Rotating fields, such as acrylic resin are blended with silica dioxide granule.
Reflection layer is the lamellar structure that surface is coated with coating or surface is polishing layer.This reflection layer is only in warp
It is scattered on the top layer for crossing coating or polishing, it is clear that light scatter intensity is big not as the intensity of light scattering layer.
Also include at least 2 face speculums 12, speculum 12 is arranged on the fin 11 of watt matrix 1, at least 2 face speculums 12
It is divided into 2 groups to be disposed opposite to each other.2 groups of opposite speculums 12 are set on the fin 11 of watt matrix 1, are conducive to when sunlight is moved
Wait, will not be by should by light collection to photovoltaic module 2, and because speculum 12 is arranged on the fin 11 of watt matrix 1
The glazing of glassy layer 21 for being radiated at photovoltaic module 2 is reflected away.
Angle between 2 groups of speculums 12 for being disposed opposite to each other is 100-160 °.The setting of angle can between 2 groups of reflectings surface
More light are helped to be reflected on photovoltaic module 2.
Outer protective layer and internal layer transition zone are PVF.PVF is polyvinyl fluoride, with outstanding ageing resistace, very well
Heat endurance, and also have high-wearing feature and contaminated resistance, protective layer and buffer layer material are used as using this material
There is good practicality for the photovoltaic module 2 in work.
Intermediate layer is PET.Outer protective layer primarily serves the effect of environment resistant erosion, and intermediate layer is mainly used in insulation, interior
Layer transition zone mainly plays bonding effect with ethylene-ethyl acetate copolymer.
It is additionally provided with what one layer of acrylic resin was blended with silica dioxide granule between outer protective layer and intermediate layer
The thickness of lamella is 0.08-0.1mm.Lamella is with 100 by acrylic resin and silica dioxide granule:The ratio of 3-5 parts by weight
Piece is made after composite to get, the method is prior art, be will not be described here.
Above-described embodiment, has been carried out further to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail, should be understood that the embodiment that the foregoing is only the present invention, be not intended to limit the present invention
Protection domain, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc. all should be included
Within protection scope of the present invention.
Claims (9)
1. a kind of improve the photovoltaic tile that light is utilized, including watt matrix (1) and photovoltaic module (2), watt matrix (1) offers cavity,
Photovoltaic module (2) includes frame, the body being arranged in frame and the terminal box being arranged on outside frame, terminal box and this body phase
Even, the frame of photovoltaic module (2) is arranged in cavity, it is characterised in that the body includes glassy layer successively from top to bottom
(21), battery pack (22), backsheet layer (23), between glassy layer (21) and battery pack (22), battery pack (22) and backsheet layer (23)
Between be provided with ethylene-vinyl acetate copolymer layer (24), the glassy layer (21) and be coated with one layer of nano silicon
Film, the backsheet layer (23) includes outer protective layer, intermediate layer and the internal layer transition zone directly contacted with the external world, outer protective layer
Light enhancement layer is also set up between intermediate layer, light enhancement layer is light scattering layer or reflection layer.
2. according to claim 1 improve the photovoltaic tile that light is utilized, it is characterised in that the smooth enhancement layer is waveform.
3. according to claim 1 improve the photovoltaic tile that light is utilized, it is characterised in that light scattering layer is one layer of acrylic acid tree
The lamellar structure that fat is blended with silica dioxide granule.
4. according to claim 1 improve the photovoltaic tile that light is utilized, it is characterised in that reflection layer is that surface is coated with
Layer or the lamellar structure that surface is polishing layer.
5. according to claim 1 improve the photovoltaic tile that light is utilized, it is characterised in that also including at least 2 face speculums
(12), speculum (12) is arranged on the fin of a watt matrix (1) (11), and at least 2 face speculums (12) are divided into 2 groups and are disposed opposite to each other.
6. according to claim 2 improve the photovoltaic tile that utilizes of light, it is characterised in that 2 groups of speculums for being disposed opposite to each other
(12) angle between is 100-160 °.
7. according to claim 1 improve the photovoltaic tile that light is utilized, it is characterised in that outer protective layer and internal layer transition zone
It is PVF.
8. according to claim 1 improve the photovoltaic tile that light is utilized, it is characterised in that intermediate layer is PET.
9. according to claim 3 improve the photovoltaic tile that utilizes of light, it is characterised in that the lamellar spacing of light scattering layer is
0.08-0.1mm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710318280.4A CN107154775A (en) | 2017-05-08 | 2017-05-08 | It is a kind of to improve the photovoltaic tile that light is utilized |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710318280.4A CN107154775A (en) | 2017-05-08 | 2017-05-08 | It is a kind of to improve the photovoltaic tile that light is utilized |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107154775A true CN107154775A (en) | 2017-09-12 |
Family
ID=59792665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710318280.4A Pending CN107154775A (en) | 2017-05-08 | 2017-05-08 | It is a kind of to improve the photovoltaic tile that light is utilized |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107154775A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201349012Y (en) * | 2008-12-23 | 2009-11-18 | 中电电气（南京）太阳能研究院有限公司 | Solar energy roof tile component |
| CN102138222A (en) * | 2009-09-28 | 2011-07-27 | 丰田自动车株式会社 | Solar cell module manufacturing method and precursor for solar cell module |
| CN202509696U (en) * | 2012-03-22 | 2012-10-31 | 山东中晶新能源有限公司 | Solar energy standard tile for roof |
| CN202627344U (en) * | 2012-05-29 | 2012-12-26 | 王立勋 | Roof tile combined with solar power generating device |
| CN103068895A (en) * | 2010-08-12 | 2013-04-24 | 马迪可公司 | Backing sheet for photovoltaic modules |
| US20130291456A1 (en) * | 2010-12-10 | 2013-11-07 | Solus Engineering, Llc | Roof Tiles and Related Systems |
| EP2711990A1 (en) * | 2012-09-21 | 2014-03-26 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Solar module and its production process |
| CN204424276U (en) * | 2015-01-20 | 2015-06-24 | 中建材浚鑫科技股份有限公司 | Photovoltaic tile |
| CN205961051U (en) * | 2016-08-18 | 2017-02-15 | 南京中核能源工程有限公司 | Photovoltaic module who possesses reflection function |
| CN206977348U (en) * | 2017-05-08 | 2018-02-06 | 四川浩能新能源有限公司 | A kind of improved photovoltaic tile |
-
2017
- 2017-05-08 CN CN201710318280.4A patent/CN107154775A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201349012Y (en) * | 2008-12-23 | 2009-11-18 | 中电电气（南京）太阳能研究院有限公司 | Solar energy roof tile component |
| CN102138222A (en) * | 2009-09-28 | 2011-07-27 | 丰田自动车株式会社 | Solar cell module manufacturing method and precursor for solar cell module |
| CN103068895A (en) * | 2010-08-12 | 2013-04-24 | 马迪可公司 | Backing sheet for photovoltaic modules |
| US20130291456A1 (en) * | 2010-12-10 | 2013-11-07 | Solus Engineering, Llc | Roof Tiles and Related Systems |
| CN202509696U (en) * | 2012-03-22 | 2012-10-31 | 山东中晶新能源有限公司 | Solar energy standard tile for roof |
| CN202627344U (en) * | 2012-05-29 | 2012-12-26 | 王立勋 | Roof tile combined with solar power generating device |
| EP2711990A1 (en) * | 2012-09-21 | 2014-03-26 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Solar module and its production process |
| CN204424276U (en) * | 2015-01-20 | 2015-06-24 | 中建材浚鑫科技股份有限公司 | Photovoltaic tile |
| CN205961051U (en) * | 2016-08-18 | 2017-02-15 | 南京中核能源工程有限公司 | Photovoltaic module who possesses reflection function |
| CN206977348U (en) * | 2017-05-08 | 2018-02-06 | 四川浩能新能源有限公司 | A kind of improved photovoltaic tile |
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Application publication date: 20170912 |
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| RJ01 | Rejection of invention patent application after publication |