CN107154452A - GaN LED inverted structures with periodicity microcellular structure and preparation method thereof - Google Patents
GaN LED inverted structures with periodicity microcellular structure and preparation method thereof Download PDFInfo
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- CN107154452A CN107154452A CN201710213430.5A CN201710213430A CN107154452A CN 107154452 A CN107154452 A CN 107154452A CN 201710213430 A CN201710213430 A CN 201710213430A CN 107154452 A CN107154452 A CN 107154452A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Abstract
The present invention relates to a kind of GaN LED inverted structures with periodicity microcellular structure, including flip-chip substrate and GaN base LED chip, micropore is wherein periodically offered on the surface of GaN base LED chip, GaN base LED chip is inverted on flip-chip substrate.
Description
Technical field
The present invention relates to semiconductor technology and encapsulation field, more particularly, to a kind of with periodicity microcellular structure
GaN-LED inverted structures and preparation method thereof.
Background technology
LED has the advantages that luminosity height, longevity of service, small volume, pollution-free, is the environmentally friendly light of new generation of green
Source.Except lighting use, LED-based visible light communication is the emphasis of next generation wireless communication.With radio frequency, millimeter wave and light wave
Etc. radio communication contrast, it is seen that optic communication has advantages below：(1) frequency spectrum resource enriches, and the bandwidth with more than 100THz is empty
Between.(2) visible light communication does not have electromagnetic radiation, can be used in the exclusive place of electromagnetic radiation.(3) load is used as using visible ray
Body, the good confidentiality in building, no information leakage risk.
Commercialization illumination level LED white lights coat yellow fluorescent powder (such as generally by blue-ray LED at present：Ce:YAG)
Mixed light is formed.Because the response time of yellow fluorescent powder is long, make LED white lights very low in the -3dB modulation bandwidths of visible light communication,
Only several MHz, so low bandwidth seriously limit development of the LED in visible light high-speed communication.
Therefore where the LED schemes for finding a kind of high brightness and high modulation bandwidth are the trend of this area.Some grind at present
Study carefully mechanism has for improving the method for LED-3dB modulation bandwidths：(1) plus blue light filter plate filter the yellow fluorescence of low-response into
Point, but this method seriously reduces LED light output.(2) LED PN junction area is reduced.Though this method can be carried effectively
High modulation bandwidth, but LED light output is in μ W magnitudes, is not suitable for lighting use.(3) GaN growth is changed in extension aspect
Crystal orientation, reduces the QCSE phenomenons in LED SQWs, it is clear that this method is complicated, and cost is high.
The content of the invention
The present invention for solve above prior art improve LED modulation bandwidths when can reduce light output or cost it is too high lack
Fall into, improve a kind of GaN-LED inverted structures with periodicity microcellular structure, the structure passes through the table in GaN base LED chip
Micropore is periodically offered on face to reduce the quantum confinement stoke effect in LED SQWs, and it is improved with this can
The modulation bandwidth seen in optic communication,
To realize above goal of the invention, the technical scheme of use is：
A kind of GaN-LED inverted structures with periodicity microcellular structure, including flip-chip substrate and GaN base LED chip, its
Micropore is periodically offered on the surface of middle GaN base LED chip, GaN base LED chip is inverted on flip-chip substrate.
Preferably, the GaN base LED chip includes Sapphire Substrate and on a sapphire substrate epitaxial growth u- successively
GaN cushions, Al-GaN layers, n-GaN layers, InGaN/GaN mqw active layers, p-GaN layer；Wherein periodic micropore passes through
Inductively coupled plasma dry method etches into n-GaN layers from p-GaN layer；The p- of the non-micro-porous area on GaN base LED chip surface
In GaN layer deposition have on ohmic contact metal layer, the surface of ohmic contact metal layer, it is heavy on micro-porous area n-GaN layer of surface
Product has insulating barrier；Insulating barrier perforate after excessive erosion of the non-micro-porous area, p-GaN metals are deposited in the respective regions of perforate
Contact layer；The perforate after excessive erosion of the insulating barrier of micro-porous area, evaporating n-GaN metals are contacted on the insulating barrier of non-micro-porous area
Layer, and make n-GaN layers to be connected by perforate with n-GaN metal contact layers；The GaN base LED chip upside-down mounting is arranged on upside-down mounting base
Its p-GaN metal contact layer, the contact of n-GaN metals are connected by the both positive and negative polarity of micron order tin ball and flip-chip substrate when on plate.
In such scheme, inverted structure uses micron order tin ball as interconnection layer, by GaN base LED chip and flip-chip substrate
On electrode interconnection, realize flip-chip packaged.This packaged type reduces process costs, perfect heat-dissipating without beating gold thread.
The exiting surface of flip-chip packaged is Sapphire Substrate simultaneously, and its exiting surface of LED structure of formal dress encapsulation is GaN.Due to sapphire
Refractive index (n=2.45) of the refractive index (n=1.75) than GaN it is low, according to Snell laws, the critical angle of light is bigger, can make
More light escape, and substantially increase LED light extraction efficiency.Therefore the present invention is provided the photoelectric properties of inverted structure and
Communication modulation bandwidth has obtained significantly improving.
Preferably, the flip-chip substrate is ceramic substrate.Flip-chip substrate is ceramic substrate, it is possible to increase inverted structure dissipate
Hot property.
Preferably, the insulating barrier is SiO2Insulating barrier.
Preferably, the ohmic contact metal layer of the deposition includes Ni metal levels and Au metal levels, and the thickness of deposition is distinguished
For 5nm and 7nm.
Preferably, it is described that corrosion perforate is carried out to insulating barrier by BOE.
Meanwhile, present invention also offers the preparation method of more than one inverted structures, its concrete scheme is as follows：
S1. mesa patternings are carried out to the surface of GaN base LED chip using mask, by inductively coupled plasma from
P-GaN layer dry etching is to n-GaN layers；
S2. the deposit ohmic contact metal layer in the p-GaN layer of the non-micro-porous area on GaN base LED chip surface；
S3. the depositing insulating layer on the surface of ohmic contact metal layer, on micro-porous area n-GaN layers of surface；
S4. mask etching technique is used, corrosion perforate, Ran Hou are carried out on the insulating barrier of non-micro-porous area using BOE
The respective regions evaporation p-GaN metal contact layers of perforate；
S5. mask etching technique is used, the insulating barrier using BOE in micro-porous area carries out corrosion perforate, then non-micro-
Evaporating n-GaN metal contact layers on the insulating barrier of bore region, and make n-GaN layers to be connected by perforate with n-GaN metal contact layers；
S6. GaN base LED chip upside-down mounting is arranged on flip-chip substrate, its p-GaN metal contact layer, the contact of n-GaN metals
Connected by the both positive and negative polarity of micron order tin ball and flip-chip substrate.
Preferably, after the step S2 deposit ohmic contact metal layers, the ohmic contact metal layer of formation is annealed
Processing.
Compared with prior art, the beneficial effects of the invention are as follows：
1) periodicity micropore is designed with GaN base LED chip, the quantum confinement stoke effect in SQW can be reduced
Should, greatly improve its modulation bandwidth in visible light communication.2) chip is subjected to flip-chip packaged, without beating gold thread, simultaneously will
The low sapphire face of refractive index reduces LED costs of manufacture, simplifies canned program, substantially increase simultaneously as exiting surface
LED light extraction efficiency.3) flip-chip substrate is ceramic substrate, and ceramic substrate has excellent heat conductivility, therefore the radiating of sample
Performance is good, greatly improves the photoelectric properties of inverted structure.
Brief description of the drawings
Fig. 1 be Sapphire Substrate, u-GaN cushions, Al-GaN layers, n-GaN layers, InGaN/GaN mqw active layers, p-
The schematic diagram of GaN layer.
Fig. 2 opens up schematic diagram for micropore.
Fig. 3 is the schematic diagram of deposit ohmic contact metal layer.
Fig. 4 is the schematic diagram of depositing insulating layer.
Fig. 5 is the schematic diagram of corrosion perforate.
Fig. 6 is evaporating n-GaN metal contact layers, the schematic diagram that p-GaN metal contact layers are deposited.
Fig. 7 is the both positive and negative polarity of flip-chip substrate and the connection diagram of GaN base LED chip.
Fig. 8 is the connection diagram of flip-chip substrate and GaN base LED chip.
Embodiment
Accompanying drawing being given for example only property explanation, it is impossible to be interpreted as the limitation to this patent；
Below in conjunction with drawings and examples, the present invention is further elaborated.
Description of reference numerals：
In Fig. 1,101- Sapphire Substrates, 102-u-GaN cushions, 103-Al-GaN layers, 104-n-GaN, 105-
InGaN/GaN mqw active layers, 106-p-GaN layer.
In Fig. 2,201- periodicity micropores.
In Fig. 3,301- Ohmic contact Ni metal levels, 302- Ohmic contact Au metal levels.
In Fig. 4,401- insulation SiO2Layer.
In Fig. 5,501- corrosion SiO2The perforate of n poles, 502- corrosion SiO2The perforate of p poles.
In Fig. 6,601-p-GaN metal contact layers, 602-n-GaN metal contact layers.
In Fig. 7,701- ceramic substrates, 702- substrates positive pole, 703-LED chips positive pole, 704-LED chips negative pole, 705-
Substrate negative pole.
In Fig. 8, the micron order tin ball of 801- connection chips and substrate.
Embodiment 1
As shown in figure 1, the GaN base LED chip that provides of the present invention includes Sapphire Substrate and on a sapphire substrate successively
Epitaxial growth u-GaN cushions, Al-GaN layers, n-GaN layers, InGaN/GaN mqw active layers, p-GaN layer.
Wherein as shown in Fig. 2~8, wherein periodic micropore is carved by inductively coupled plasma dry method from p-GaN layer
Lose n-GaN layers；Deposition has ohmic contact metal layer, ohm in the p-GaN layer of the non-micro-porous area on GaN base LED chip surface
Deposition has insulating barrier on the surface of contact metal layer, on micro-porous area n-GaN layers of surface；The insulating barrier of the non-micro-porous area
The perforate after excessive erosion, p-GaN metal contact layers are deposited in the respective regions of perforate；The insulating barrier of micro-porous area is after excessive erosion
Perforate, the evaporating n-GaN metal contact layers on the insulating barrier of non-micro-porous area, and make n-GaN layers by perforate and n-GaN metals
Contact layer is connected；Its p-GaN metal contact layer, n-GaN metals when the GaN base LED chip upside-down mounting is arranged on flip-chip substrate
Contact is connected by the both positive and negative polarity of micron order tin ball and flip-chip substrate.Wherein the radius of micropore is 37.5um.
In such scheme, inverted structure uses micron order tin ball as interconnection layer, by GaN base LED chip and flip-chip substrate
On electrode interconnection, realize flip-chip packaged.This packaged type reduces process costs, perfect heat-dissipating without beating gold thread.
The exiting surface of flip-chip packaged is Sapphire Substrate simultaneously, and its exiting surface of LED structure of formal dress encapsulation is GaN.Due to sapphire
Refractive index (n=2.45) of the refractive index (n=1.75) than GaN it is low, according to Snell laws, the critical angle of light is bigger, can make
More light escape, and substantially increase LED light extraction efficiency.Therefore the present invention is provided the photoelectric properties of inverted structure and
Communication modulation bandwidth has obtained significantly improving.
In the present embodiment, the flip-chip substrate is ceramic substrate.Flip-chip substrate is ceramic substrate, it is possible to increase inverted structure
Heat dispersion.The insulating barrier is SiO2Insulating barrier.The ohmic contact metal layer of the deposition includes Ni metal levels and Au gold
Belong to layer, the thickness of deposition is respectively 5nm and 7nm.The ohmic contact metal layer of the deposition includes Ni metal levels and Au metal levels,
The thickness of deposition is respectively 5nm and 7nm.It is described that corrosion perforate is carried out to insulating barrier by BOE.
Embodiment 2
A kind of preparation method of the inverted structure of embodiment 1 is present embodiments provided, its specific scheme is as follows：
S1. mesa patternings are carried out to the surface of GaN base LED chip using mask, it is dry by inductively coupled plasma
Method etches into n-GaN layers from p-GaN layer；As shown in Figure 2；
S2. the deposit ohmic contact metal layer in the p-GaN layer of the non-micro-porous area on GaN base LED chip surface；Such as Fig. 3
It is shown；
S3. the depositing insulating layer on the surface of ohmic contact metal layer, on micro-porous area n-GaN layers of surface；Such as Fig. 4 institutes
Show；
S4. mask etching technique is used, corrosion perforate, Ran Hou are carried out on the insulating barrier of non-micro-porous area using BOE
The respective regions evaporation p-GaN metal contact layers of perforate；As shown in Figure 5,6；
S5. mask etching technique is used, the insulating barrier using BOE in micro-porous area carries out corrosion perforate, then non-micro-
Evaporating n-GaN metal contact layers on the insulating barrier of bore region, and make n-GaN layers to be connected by perforate with n-GaN metal contact layers；
As shown in Figure 5,6；
S6. GaN base LED chip upside-down mounting is arranged on flip-chip substrate, its p-GaN metal contact layer, the contact of n-GaN metals
Connected by the both positive and negative polarity of micron order tin ball and flip-chip substrate.As shown in Figure 7,8.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not pair
The restriction of embodiments of the present invention.For those of ordinary skill in the field, may be used also on the basis of the above description
To make other changes in different forms.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Any modifications, equivalent substitutions and improvements made within the spirit and principle of invention etc., should be included in the claims in the present invention
Protection domain within.
Claims (9)
1. a kind of GaN-LED inverted structures with periodicity microcellular structure, it is characterised in that：Including flip-chip substrate and GaN base
Micropore is periodically offered in LED chip, the wherein surface of GaN base LED chip, GaN base LED chip is inverted in flip-chip substrate
On.
2. the GaN-LED inverted structures according to claim 1 with periodicity microcellular structure, it is characterised in that：It is described
GaN base LED chip includes Sapphire Substrate and on a sapphire substrate epitaxial growth u-GaN cushions, Al-GaN layers, n- successively
GaN layer, InGaN/GaN mqw active layers, p-GaN layer；Wherein periodic micropore is by inductively coupled plasma from p-
GaN layer dry etching is to n-GaN layers；Deposition has Ohmic contact in the p-GaN layer of the non-micro-porous area on GaN base LED chip surface
Deposition has insulating barrier on metal level, the surface of ohmic contact metal layer, on micro-porous area n-GaN layers of surface；The non-micropore
The perforate after excessive erosion of the insulating barrier in region, p-GaN metal contact layers are deposited in the respective regions of perforate；The insulation of micro-porous area
Layer perforate after excessive erosion, the evaporating n-GaN metal contact layers on the insulating barrier of non-micro-porous area, and make n-GaN layers by opening
Hole is connected with n-GaN metal contact layers；Its p-GaN metal is contacted when the GaN base LED chip upside-down mounting is arranged on flip-chip substrate
Layer, the contact of n-GaN metals are connected by the both positive and negative polarity of micron order tin ball and flip-chip substrate.
3. the GaN-LED inverted structures according to claim 2 with periodicity microcellular structure, it is characterised in that：It is described
Flip-chip substrate is ceramic substrate.
4. the GaN-LED inverted structures according to claim 2 with periodicity microcellular structure, it is characterised in that：It is described
Insulating barrier is SiO2Insulating barrier.
5. the GaN-LED inverted structures according to claim 2 with periodicity microcellular structure, it is characterised in that：It is described
The ohmic contact metal layer of deposition includes Ni metal levels and Au metal levels, and the thickness of deposition is respectively 5nm and 7nm.
6. the GaN-LED inverted structures according to claim 2 with periodicity microcellular structure, it is characterised in that：It is described
N-GaN metal contact layers, p-GaN metal contact layers include Cr metal levels, Pd metal levels and Au metal levels, the thickness that they are deposited
Respectively 20nm, 40nm and 200nm.
7. the GaN-LED inverted structures according to claim 2 with periodicity microcellular structure, it is characterised in that：It is described
Corrosion perforate is carried out to insulating barrier by BOE.
8. a kind of preparation method according to any one of claim 2~7 inverted structure, it is characterised in that：Comprise the following steps：
S1. mesa patternings are carried out to the surface of GaN base LED chip using mask, by inductively coupled plasma from p-GaN
Layer dry etching is to n-GaN layers；
S2. the deposit ohmic contact metal layer in the p-GaN layer of the non-micro-porous area on GaN base LED chip surface；
S3. the depositing insulating layer on the surface of ohmic contact metal layer, on micro-porous area n-GaN layers of surface；
S4. mask etching technique is used, corrosion perforate is carried out on the insulating barrier of non-micro-porous area using BOE, then in perforate
Respective regions evaporation p-GaN metal contact layers；
S5. mask etching technique is used, the insulating barrier using BOE in micro-porous area carries out corrosion perforate, then in non-micropore area
Evaporating n-GaN metal contact layers on the insulating barrier in domain, and make n-GaN layers to be connected by perforate with n-GaN metal contact layers；
S6. GaN base LED chip upside-down mounting is arranged on flip-chip substrate, its p-GaN metal contact layer, the contact of n-GaN metals pass through
The both positive and negative polarity connection of micron order tin ball and flip-chip substrate.
9. preparation method according to claim 8, it is characterised in that：After the step S2 deposit ohmic contact metal layers,
The ohmic contact metal layer of formation is made annealing treatment.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768491A (en) * | 2017-10-31 | 2018-03-06 | 江苏新广联半导体有限公司 | MicroLED display module preparation methods for bracelet |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
| CN101867002A (en) * | 2010-05-27 | 2010-10-20 | 常州美镓伟业光电科技有限公司 | Novel semiconductor light-emitting diode |
-
2017
- 2017-04-01 CN CN201710213430.5A patent/CN107154452A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
| CN101867002A (en) * | 2010-05-27 | 2010-10-20 | 常州美镓伟业光电科技有限公司 | Novel semiconductor light-emitting diode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768491A (en) * | 2017-10-31 | 2018-03-06 | 江苏新广联半导体有限公司 | MicroLED display module preparation methods for bracelet |
| CN107768491B (en) * | 2017-10-31 | 2019-11-22 | 江苏新广联半导体有限公司 | MicroLED display module production method for bracelet |
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