CN107154451A - A kind of chip of light emitting diode and preparation method thereof - Google Patents
A kind of chip of light emitting diode and preparation method thereof Download PDFInfo
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- CN107154451A CN107154451A CN201710166253.XA CN201710166253A CN107154451A CN 107154451 A CN107154451 A CN 107154451A CN 201710166253 A CN201710166253 A CN 201710166253A CN 107154451 A CN107154451 A CN 107154451A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Abstract
The invention discloses a kind of chip of light emitting diode and preparation method thereof, belong to technical field of semiconductors.Chip includes substrate, nitride buffer layer, n type gallium nitride layer, multiple quantum well layer, p-type gallium nitride layer, current barrier layer, transparency conducting layer, N-type electrode, P-type electrode and passivation layer；N-type electrode is arranged on the n type gallium nitride layer in groove, and passivation layer is arranged on the n type gallium nitride layer in the side wall and groove of transparency conducting layer, groove；Cylinder and at least one bottom surface that P-type electrode is arranged on p-type gallium nitride layer and transparency conducting layer including bottom surface set bar shape over transparent conductive layer, bar shape is stretched out by the side of cylinder, cylinder and bar shape include ohmic contact layer, reflector layer and the solder layer stacked gradually, the material of reflector layer uses Al-Si-Cu alloy, the mass fraction of silicon is that the mass fraction of copper in 1%~2%, Al-Si-Cu alloy is 0.5%~1% in Al-Si-Cu alloy.The present invention improves chip reliability.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of chip of light emitting diode and preparation method thereof.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED it is) electroluminescent using the PN junction of semiconductor
A kind of light emitting semiconductor device that principle of luminosity is made.LED is that do not have ultraviolet in a kind of lighting source of environmental protection, spectrum
And infrared ray, both without heat in the light sent, also without harmful radiation, and discarded object is recyclable.In addition, LED also has
Low-voltage, low-power consumption, small volume, it is lightweight the advantages of, the various forms of products such as point, line, surface can be made, while control pole
For convenience, light intensity can be arbitrarily adjusted by adjusting electric current, can more reaches that colourful dynamic becomes using sequential control circuit
Change effect.LED is widely used to traffic lights, automobile interior exterior lamp, landscape light in city, cell phone back light source, open air at present
The fields such as full color display.
Existing LED includes Sapphire Substrate, and stacks gradually N-type layer on a sapphire substrate, multiple quantum well layer, P
P-type electrode is provided with type layer, current barrier layer and transparency conducting layer, transparency conducting layer, LED is provided with to be prolonged from transparency conducting layer
Extend and N-type electrode is provided with the N-type layer in the groove of N-type layer, groove, the N in transparency conducting layer, the side wall and groove of groove
Passivation layer is provided with type layer.Wherein, P-type electrode includes cylinder and at least one bar shaped stretched out from cylinder
Body, cylinder and bar shape include ohmic contact layer, reflector layer and the solder layer stacked gradually, and the material of reflector layer is typically adopted
With the aluminium with high reflectance, to reduce the absorption of electrode pair light, LED luminosity is improved.
During the present invention is realized, inventor has found that prior art at least has problems with：
The problem of there is electromigration when in use in aluminium, and the width very little (being decreased to 4 microns at present) of bar shape,
Bar shape is easy to be broken after a long time use, causes LED reliability relatively low, influences LED Industry Promotion.
The content of the invention
In order to solve prior art electrode the problem of long-time is relatively low using the reliability for being easily broken off, causing LED, this
Inventive embodiments provide a kind of chip of light emitting diode and preparation method thereof.The technical scheme is as follows：
On the one hand, the embodiments of the invention provide a kind of chip of light emitting diode, the chip includes substrate, Yi Jiyi
The secondary nitride buffer layer being layered on the substrate, n type gallium nitride layer, multiple quantum well layer, p-type gallium nitride layer, current blocking
Layer and transparency conducting layer, the chip are provided with the groove that the n type gallium nitride layer is extended to from the transparency conducting layer；It is described
Chip also includes N-type electrode, P-type electrode and passivation layer, and the N-type electrode is arranged on the n type gallium nitride in the groove
On layer, the passivation layer is arranged on the n type gallium nitride in the side wall and the groove of the transparency conducting layer, the groove
On layer；The P-type electrode includes bottom surface and is arranged on the p-type gallium nitride layer and cylinder on transparency conducting layer and at least one
Bottom surface is arranged on the bar shape on the transparency conducting layer, and the bar shape is stretched out by the side of the cylinder, described
Cylinder and the bar shape include ohmic contact layer, reflector layer and the solder layer stacked gradually, the material of the reflector layer
Using Al-Si-Cu alloy, the mass fraction of silicon is the matter of copper in 1%~2%, the Al-Si-Cu alloy in the Al-Si-Cu alloy
It is 0.5%~1% to measure fraction.
Alternatively, the solder layer includes distance institute at least two sublayers stacked gradually, at least two sublayer
The material for stating the farthest sublayer of reflector layer uses Al-Si-Cu alloy.
Preferably, at least two sublayer thickness of the farthest sublayer of reflector layer described in distance for 10000~
20000 angstroms.
Alternatively, the thickness of the reflector layer is 500~3000 angstroms.
On the other hand, the embodiments of the invention provide a kind of preparation method of the chip of light emitting diode, the preparation side
Method includes：
Growing gallium nitride cushion, n type gallium nitride layer, multiple quantum well layer, p-type gallium nitride layer successively on substrate；
Open up the groove that the n type gallium nitride layer is extended to from the p-type gallium nitride layer；
Current barrier layer and transparency conducting layer are formed on the p-type gallium nitride layer；
P-type electrode is set on the p-type gallium nitride layer and the transparency conducting layer, the N-type in the groove
N-type electrode is set on gallium nitride layer, and the P-type electrode is arranged on the p-type gallium nitride layer and transparency conducting layer including bottom surface
Cylinder and at least one bottom surface be arranged on bar shape on the transparency conducting layer, the bar shape is by the cylinder
Side stretches out；
Passivation is formed on n type gallium nitride layer in the transparency conducting layer, the side wall of the groove, the groove
Layer；
It is described that P-type electrode is set on the p-type gallium nitride layer and the transparency conducting layer, described in the groove
N-type electrode is set on n type gallium nitride layer, including：
Ohmic contact layer, reflector layer and solder layer are sequentially formed, the material of the reflector layer uses Al-Si-Cu alloy, described
The mass fraction of silicon is that the mass fraction of copper in 1%~2%, the Al-Si-Cu alloy is 0.5%~1% in Al-Si-Cu alloy.
Alternatively, it is described to sequentially form ohmic contact layer, reflector layer and solder layer, including：
Successively using sputtering technology formation ohmic contact layer, reflector layer and solder layer.
Preferably, it is described successively using sputtering technology formation ohmic contact layer, reflector layer and solder layer, including：
The chip for not forming the P-type electrode and the N-type electrode is placed in the cavity in magnetron sputtering apparatus, institute
The distance for stating chip and target is 3~10cm；
The vacuum for controlling the cavity is 0.05~0.5KPa, and using target described in argon ion bombardment, the target splashes
It is mapped on the chip, forms ohmic contact layer, reflector layer or solder layer.
It is highly preferred that the distance of the chip and target is 6cm.
Alternatively, the solder layer includes distance institute at least two sublayers stacked gradually, at least two sublayer
The material for stating the farthest sublayer of reflector layer uses Al-Si-Cu alloy.
Preferably, at least two sublayer thickness of the farthest sublayer of reflector layer described in distance for 10000~
20000 angstroms.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
The density of silicon and copper is bigger than aluminium, and the Al-Si-Cu alloy formed in aluminium is blended in using silicon and copper and is formed instead instead of aluminium
Silicon and copper are penetrated into the room of aluminium in photosphere, reflector layer so that the vacancy concentration reduction in reflector layer, and then hinder aluminium
Diffusion, is effectively improved the problem of aluminium electromigration occurs when in use, it is to avoid aluminium migration causes lead rupture, while Al-Si-Cu alloy
In copper silicon can be prevented to crystallize to form projection, strengthen the stability of electrode, the service life of electrode improved into nearly quantity
Level, and then the reliability of chip is improved, strengthen the LED market competitiveness.And the mass fraction of silicon is 1% in Al-Si-Cu alloy
~2%, the mass fraction of copper is 0.5%~1% in Al-Si-Cu alloy, and the content of silicon and copper is very low, will not be to the reflective work of aluminium
With impacting.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, makes required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation of the chip for light emitting diode that the embodiment of the present invention one is provided；
Fig. 2 is the structural representation of the P-type electrode that the embodiment of the present invention one is provided and N-type electrode；
Fig. 3 is the structural representation of the cylinder that the embodiment of the present invention one is provided and bar shape；
Fig. 4 is a kind of flow chart of the preparation method of the chip for light emitting diode that the embodiment of the present invention two is provided.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiments of the invention provide a kind of chip of light emitting diode, referring to Fig. 1, the chip includes substrate 1, Yi Jiyi
The secondary nitride buffer layer 2 being layered on substrate 1, n type gallium nitride layer 3, multiple quantum well layer 4, p-type gallium nitride layer 5, current blocking
Layer 6 and transparency conducting layer 7, the chip are provided with the groove that n type gallium nitride layer 3 is extended to from transparency conducting layer 7.The chip is also wrapped
N-type electrode 8, P-type electrode 9 and passivation layer 10 are included, N-type electrode 8 is arranged on the n type gallium nitride layer 3 in groove, and passivation layer 10 is set
Put on the n type gallium nitride layer 3 in transparency conducting layer 7, the side wall and groove of groove.P-type electrode is arranged on p-type nitrogen including bottom surface
Change gallium layer and the bar shape of cylinder and the setting of at least one bottom surface over transparent conductive layer on transparency conducting layer, referring to Fig. 2,
Bar shape 92 is stretched out by the side of cylinder 91, referring to Fig. 3, and ohm that cylinder and bar shape include stacking gradually connects
Contact layer 9a, reflector layer 9b and solder layer 9c.
In the present embodiment, the material of reflector layer uses the mass fraction of silicon in Al-Si-Cu alloy, Al-Si-Cu alloy can be with
For 1%~2%, the mass fraction of copper can be 0.5%~1% in Al-Si-Cu alloy.
The density of silicon and copper is bigger than aluminium, and the Al-Si-Cu alloy formed in aluminium is blended in using silicon and copper and is formed instead instead of aluminium
Silicon and copper are penetrated into the room of aluminium in photosphere, reflector layer so that the vacancy concentration reduction in reflector layer, and then hinder aluminium
Diffusion, is effectively improved the problem of aluminium electromigration occurs when in use, it is to avoid aluminium migration causes lead rupture, while Al-Si-Cu alloy
In copper silicon can be prevented to crystallize to form projection, strengthen the stability of electrode, the service life of electrode improved into nearly quantity
Level, and then the reliability of chip is improved, strengthen the LED market competitiveness.And the mass fraction of silicon is 1% in Al-Si-Cu alloy
~2%, the mass fraction of copper is 0.5%~1% in Al-Si-Cu alloy, and the content of silicon and copper is very low, will not be to the reflective work of aluminium
With impacting.
In the present embodiment, the side of bar shape 92 and the plane perpendicular of bar shape 92.
Specifically, substrate is Sapphire Substrate.
Specifically, the thickness of reflector layer can be 500~3000 angstroms, while reflecting effect is reached, save material
Use.
Alternatively, the material of ohmic contact layer can use chromium.
Specifically, the thickness of ohmic contact layer can be 5~50 angstroms, and Ohmic contact is realized in guarantee and semi-conducting material
In the case of, it is to avoid blocked up influence luminosity.
Alternatively, solder layer can be included at least two sublayers stacked gradually, at least two sublayers apart from reflector layer
The material of farthest sublayer uses Al-Si-Cu alloy.
Specifically, the thickness of sublayer farthest apart from reflector layer at least two sublayers can be 10000~20000 angstroms.
Preferably, solder layer can include two sublayers stacked gradually, and the material that two sublayers are used is followed successively by titanium, aluminium
Silicon copper；Solder layer can also include three sublayers stacked gradually, and the material that three sublayers are used is followed successively by chromium, titanium, aluminium
Silicon copper.
Specifically, the thickness of three sublayers can be followed successively by 200~1000 angstroms, 200~1000 angstroms, 10000~20000
Angstrom.
Specifically, multiple quantum well layer can include multiple indium gallium nitrogen layers and multiple gallium nitride layers, multiple indium gallium nitrogen layers and many
Individual gallium nitride layer is alternately laminated to be set.The material of current barrier layer can be silica or aluminum oxide, current barrier layer
Thickness can be 1000 angstroms.The material of transparency conducting layer can be tin indium oxide or cadmium oxide.The material of passivation layer can be
Silica or aluminum oxide.
Alternatively, the chip can also include setting distributed bragg reflector mirror (English on substrate 1：
Distributed Bragg Reflection, abbreviation DBR) layer 11, DBR layer 11 and nitride buffer layer 2 are separately positioned on lining
On two opposite surfaces of bottom 1.
Specifically, DBR layer can include the multiple oxide layers being stacked, and multiple oxide layers use at least two material systems
Into the oxide layer of different materials is periodically stacked in multiple oxide layers, the number of plies >=30 of multiple oxide layers.
Preferably, the material of the oxide layer of at least two refractive indexes can use tantalum pentoxide, zirconium dioxide, oxidation
Two or three in aluminium, titanium dioxide, silica.Tantalum pentoxide Ta2O5, zirconium dioxide ZrO2, aluminium oxide Al2O3, two
Titanium oxide TiO2, silica SiO2Refractive index be respectively 2.06,1.92,1.77,2.35 and 1.46.
Further, the material of the oxide layer of at least two refractive indexes can use titanium dioxide and silica, dioxy
The refractive index for changing titanium and silica is maximum, and reflecting effect is best.
Embodiment two
The embodiments of the invention provide a kind of preparation method of the chip of light emitting diode, it is adaptable to prepares embodiment one and carries
The chip of confession, referring to Fig. 4, the preparation method includes：
Step 201：Growing gallium nitride cushion, n type gallium nitride layer, multiple quantum well layer, p-type gallium nitride successively on substrate
Layer.
Specifically, substrate is Sapphire Substrate.Multiple quantum well layer can include multiple indium gallium nitrogen layers and multiple gallium nitride layers,
Multiple indium gallium nitrogen layers and multiple gallium nitride layers are alternately laminated to be set.
Step 202：Open up the groove that n type gallium nitride layer is extended to from p-type gallium nitride layer.
Step 203：Current barrier layer and transparency conducting layer are formed on p-type gallium nitride layer.
Specifically, the material of current barrier layer can be silica or aluminum oxide, and the thickness of current barrier layer can be with
For 1000 angstroms.The material of transparency conducting layer can be tin indium oxide or cadmium oxide.
Step 204：P-type electrode is set on p-type gallium nitride layer and transparency conducting layer, the n type gallium nitride layer in groove
Upper setting N-type electrode.
In the present embodiment, P-type electrode include bottom surface be arranged on cylinder on p-type gallium nitride layer and transparency conducting layer and
At least one bottom surface sets bar shape over transparent conductive layer, and bar shape is stretched out by the side of cylinder.
Specifically, the step 204 includes：
Ohmic contact layer, reflector layer and solder layer are sequentially formed, the material of reflector layer uses Al-Si-Cu alloy, and aluminium copper silicon is closed
The mass fraction of silicon can be that the mass fraction of copper in 1%~2%, Al-Si-Cu alloy can be 0.5%~1% in gold.
Alternatively, ohmic contact layer, reflector layer and solder layer are sequentially formed, can be included：
Successively using sputtering technology formation ohmic contact layer, reflector layer and solder layer.
The reflector layer that original evaporation technique is formed by Al-Si-Cu alloy is replaced by using sputtering technology, can be effective
Control the ratio of each composition in Al-Si-Cu alloy, it is to avoid discrepancy, alloy occurs in each component ratio caused by evaporation technique
The problem of characteristic changes, and alloy is overall also finer and close, further increases the reliability of chip.Use and splash simultaneously
The other sublayers penetrated in technology formation electrode, can improve the adhesive force of electrode, and effectively control the thickness of sublayer.
Preferably, it can be included using sputtering technology formation ohmic contact layer, reflector layer and solder layer successively：
The chip for not forming P-type electrode and N-type electrode is placed in the cavity in magnetron sputtering apparatus, chip and target
Distance be 3~10cm；
The vacuum for controlling cavity is 0.05~0.5KPa, using argon ion bombardment target, on target as sputter to chip, shape
Into ohmic contact layer, reflector layer or solder layer.
It is highly preferred that the distance of chip and target can be 3~10cm, to reach optimal sputtering effect.
Specifically, the thickness of reflector layer can be 500~3000 angstroms, while reflecting effect is reached, save material
Use.
Alternatively, the material of ohmic contact layer can use chromium.
Specifically, the thickness of ohmic contact layer can be 5~50 angstroms, and Ohmic contact is realized in guarantee and semi-conducting material
In the case of, it is to avoid blocked up influence luminosity.
Alternatively, solder layer can be included at least two sublayers stacked gradually, at least two sublayers apart from reflector layer
The material of farthest sublayer uses Al-Si-Cu alloy.
Specifically, the thickness of sublayer farthest apart from reflector layer at least two sublayers can be 10000~20000 angstroms.
Preferably, solder layer can include two sublayers stacked gradually, and the material that two sublayers are used is followed successively by titanium, aluminium
Silicon copper；Solder layer can also include three sublayers stacked gradually, and the material that three sublayers are used is followed successively by chromium, titanium, aluminium
Silicon copper.
Specifically, the thickness of three sublayers can be followed successively by 200~1000 angstroms, 200~1000 angstroms, 10000~20000
Angstrom.
Step 205：Passivation layer is formed on n type gallium nitride layer in transparency conducting layer, the side wall of groove, groove.
Specifically, the material of passivation layer can be silica or aluminum oxide.
Step 206：Substrate is thinned.
Step 207：DBR layer is formed on substrate.
In the present embodiment, DBR layer and nitride buffer layer are separately positioned on two opposite surfaces of substrate.
Specifically, DBR layer can include the multiple oxide layers being stacked, and multiple oxide layers use at least two material systems
Into the oxide layer of different materials is periodically stacked in multiple oxide layers, the number of plies >=30 of multiple oxide layers.
Preferably, the material of the oxide layer of at least two refractive indexes can use tantalum pentoxide, zirconium dioxide, oxidation
Two or three in aluminium, titanium dioxide, silica.
Further, the material of the oxide layer of at least two refractive indexes can use titanium dioxide and silica, dioxy
The refractive index for changing titanium and silica is maximum, and reflecting effect is best.
Step 208：Draw and split substrate, obtain chip.
The chip that chip prepared by the preparation method that the present embodiment is provided is prepared with conventional method 85 DEG C temperature and
Burn-in test is carried out under 85 humidity, test result is as shown in following table one：
Table one
It can see by table one, chip prepared by the preparation method that the present embodiment is provided improves luminous power sustainment rate
2.13%, and voltage has almost no change.
The density of silicon and copper is bigger than aluminium, and the Al-Si-Cu alloy formed in aluminium is blended in using silicon and copper and is formed instead instead of aluminium
Silicon and copper are penetrated into the room of aluminium in photosphere, reflector layer so that the vacancy concentration reduction in reflector layer, and then hinder aluminium
Diffusion, is effectively improved the problem of aluminium electromigration occurs when in use, it is to avoid aluminium migration causes lead rupture, while Al-Si-Cu alloy
In copper silicon can be prevented to crystallize to form projection, strengthen the stability of electrode, the service life of electrode improved into nearly quantity
Level, and then the reliability of chip is improved, strengthen the LED market competitiveness.And the mass fraction of silicon is 1% in Al-Si-Cu alloy
~2%, the mass fraction of copper is 0.5%~1% in Al-Si-Cu alloy, and the content of silicon and copper is very low, will not be to the reflective work of aluminium
With impacting.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (10)
1. a kind of chip of light emitting diode, the chip includes substrate and stacks gradually gallium nitride over the substrate
Set on cushion, n type gallium nitride layer, multiple quantum well layer, p-type gallium nitride layer, current barrier layer and transparency conducting layer, the chip
There is the groove that the n type gallium nitride layer is extended to from the transparency conducting layer；The chip also include N-type electrode, P-type electrode and
Passivation layer, the N-type electrode is arranged on the n type gallium nitride layer in the groove, and the passivation layer is arranged on described
On n type gallium nitride layer in bright conductive layer, the side wall and the groove of the groove；The P-type electrode is set including bottom surface
Put the cylinder on the p-type gallium nitride layer and transparency conducting layer and at least one bottom surface is arranged on the transparency conducting layer
Bar shape, the bar shape stretches out by the side of the cylinder, the cylinder and the bar shape include according to
Ohmic contact layer, reflector layer and the solder layer of secondary stacking, it is characterised in that the material of the reflector layer uses Al-Si-Cu alloy,
The mass fraction of silicon is 1%~2% in the Al-Si-Cu alloy, in the Al-Si-Cu alloy mass fraction of copper for 0.5%~
1%.
2. chip according to claim 1, it is characterised in that the solder layer includes at least two sons stacked gradually
The material of the farthest sublayer of reflector layer described in distance uses Al-Si-Cu alloy in layer, at least two sublayer.
3. chip according to claim 2, it is characterised in that reflector layer described in distance is farthest at least two sublayer
The sublayer thickness be 10000~20000 angstroms.
4. the chip according to any one of claims 1 to 3, it is characterised in that the thickness of the reflector layer is 500~3000
Angstrom.
5. a kind of preparation method of the chip of light emitting diode, the preparation method includes：
Growing gallium nitride cushion, n type gallium nitride layer, multiple quantum well layer, p-type gallium nitride layer successively on substrate；
Open up the groove that the n type gallium nitride layer is extended to from the p-type gallium nitride layer；
Current barrier layer and transparency conducting layer are formed on the p-type gallium nitride layer；
P-type electrode is set on the p-type gallium nitride layer and the transparency conducting layer, the N-type nitridation in the groove
N-type electrode is set on gallium layer, and the P-type electrode includes the circle that bottom surface is arranged on the p-type gallium nitride layer and transparency conducting layer
Cylinder and at least one bottom surface are arranged on the bar shape on the transparency conducting layer, and the bar shape is by the side of the cylinder
Stretch out；
Passivation layer is formed on n type gallium nitride layer in the transparency conducting layer, the side wall of the groove, the groove；
Characterized in that, described set P-type electrode on the p-type gallium nitride layer and the transparency conducting layer, in the groove
N-type electrode is set on interior n type gallium nitride layer, including：
Ohmic contact layer, reflector layer and solder layer are sequentially formed, the material of the reflector layer uses Al-Si-Cu alloy, the aluminium silicon
The mass fraction of silicon is that the mass fraction of copper in 1%~2%, the Al-Si-Cu alloy is 0.5%~1% in copper alloy.
6. preparation method according to claim 5, it is characterised in that it is described sequentially form ohmic contact layer, reflector layer and
Solder layer, including：
Successively using sputtering technology formation ohmic contact layer, reflector layer and solder layer.
7. preparation method according to claim 6, it is characterised in that described successively using sputtering technology formation Ohmic contact
Layer, reflector layer and solder layer, including：
The chip for not forming the P-type electrode and the N-type electrode is placed in the cavity in magnetron sputtering apparatus, the core
The distance of piece and target is 3~10cm；
The vacuum for controlling the cavity is 0.05~0.5KPa, and using target described in argon ion bombardment, the target as sputter is arrived
On the chip, ohmic contact layer, reflector layer or solder layer are formed.
8. preparation method according to claim 7, it is characterised in that the distance of the chip and target is 6cm.
9. the preparation method according to any one of claim 5~8, it is characterised in that the solder layer includes stacking gradually
At least two sublayers, the material of the farthest sublayer of reflector layer described in distance uses aluminium copper silicon at least two sublayer
Alloy.
10. preparation method according to claim 9, it is characterised in that reflective described in distance at least two sublayer
The thickness of the farthest sublayer of layer is 10000~20000 angstroms.
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Application publication date: 20170912 |