CN107154421B - Display device and forming method of barrier layer on substrate in display device - Google Patents
Display device and forming method of barrier layer on substrate in display device Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
Abstract
The invention discloses a display device and a forming method of a barrier layer on a substrate in the display device, wherein the display device comprises: a substrate, an encapsulation layer, an electron emission layer, and an emission layer electrode. A barrier layer is laid on the substrate; at least one part of the barrier layer is arranged on one side of the substrate facing the packaging layer; the electronic luminescent layer is arranged between the substrate and the packaging layer, and is connected with a first pixel electrode and a second pixel electrode; the light emitting layer electrode is laid between the electronic light emitting layer and the packaging layer, an active layer, a source drain electrode and a gate electrode are formed between the barrier layer and the packaging layer, the source drain electrode is electrically connected with the active layer, the gate electrode is insulated with the active layer and the source drain electrode respectively, the source drain electrode is connected with the first pixel electrode, and the gate electrode is connected with the second pixel electrode. According to the display device provided by the embodiment of the invention, the stability can be effectively improved.
Description
Technical Field
The invention relates to the technical field of display equipment, in particular to a display device and a forming method of a barrier layer on a substrate in the display device.
Background
An OLED is a thin film light emitting device made of an organic semiconductor material, which has a self-light emitting characteristic. OLEDs are primarily made with thin organic material coatings and glass substrates, and do not require a backlight. Therefore, when a current is passed, the organic materials emit light actively. Since the OLED depends on current driving, the luminance of the OLED is related to the magnitude of the current flowing through the OLED, so that the electrical performance of a Thin-film transistor (TFT) as the driving directly affects the display effect of the OLED, and especially the threshold voltage of the TFT often drifts, so that the whole OLED display device has a problem of uneven luminance.
In order to improve the display effect of the OLED, the OLED is generally subjected to pixel compensation by a driving circuit. However, the data voltage signal and the reference voltage signal of the conventional OLED pixel compensation circuit need to be inputted by different wirings, and the data voltage signal and the reference voltage signal need to be outputted by timing control through one TFT, respectively. In the existing OLED pixel circuit, threshold voltage compensation is generally implemented based on a circuit design technology to cope with performance drift of a TFT device caused by long-term operation, which greatly increases complexity of a driving circuit and increases an area of the pixel circuit.
Polymer substrates such as polyimide films, polyethylene naphthalate films and the like are mostly adopted as flexible substrates in flexible display devices, and a multilayer composite protective film is required to be added to increase the water and oxygen barrier effect. The prior art has at least the following problems: the preparation of the barrier layer with the two-layer structure is completed through two steps, the steps are complicated, different equipment needs to be invested, especially Plasma Enhanced Chemical Vapor Deposition (PECVD) is needed when hydrophilic materials, especially inorganic hydrophilic materials, are involved, and the equipment is expensive. In addition, delamination is likely to occur due to interfacial problems between organic and inorganic materials.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, an object of the present invention is to provide a display device in which threshold voltage shift can be suppressed.
A display device according to an embodiment of the present invention includes: a substrate, an encapsulation layer, an electron emission layer, and an emission layer electrode. A barrier layer is laid on the substrate; at least one part of the barrier layer is arranged on one side of the substrate facing the packaging layer; the electronic light-emitting layer is arranged between the substrate and the packaging layer, and a first pixel electrode and a second pixel electrode are connected to the electronic light-emitting layer; the light emitting layer electrode is laid between the electronic light emitting layer and the packaging layer, an active layer, a source drain electrode and a gate electrode are formed between the barrier layer and the packaging layer, the source drain electrode is electrically connected with the active layer, the gate electrode is respectively insulated with the active layer and the source drain electrode, the source drain electrode is connected with the first pixel electrode, and the gate electrode is connected with the second pixel electrode.
According to the display device provided by the embodiment of the invention, the compensation electrode formed by the pixel electrode layer can effectively improve the stability and reduce the pixel area increased by a circuit design technology.
In addition, the display device according to the above embodiment of the present invention may further have the following additional technical features:
in some embodiments of the present invention, the barrier layer comprises an organic barrier layer and an inorganic barrier layer.
In some embodiments of the present invention, the organic barrier layer is disposed on the substrate, the inorganic barrier layer is formed on a surface of the organic barrier layer, and the organic barrier layer is surface-treated to form the inorganic barrier layer.
In some embodiments of the present invention, the organic barrier layer is a polydimethylsiloxane layer and the inorganic barrier layer is a silicon dioxide layer.
In some embodiments of the present invention, the active layer is disposed on the blocking layer, and the source and drain electrodes are formed on the blocking layer or the active layer.
In some embodiments of the present invention, the gate electrode is spaced apart from the active layer, and an insulating layer is deposited between the gate electrode and the active layer.
In some embodiments of the invention, the substrate is a flexible substrate, and the substrate is a polyimide film or a polyethylene naphthalate film.
In some embodiments of the present invention, at least one of the substrate and the active layer comprises at least one of an organic semiconductor and a metal oxide semiconductor.
In some embodiments of the invention, the organic semiconductor material comprises at least one of polythiophene, polyaniline, polypyrrole, polyfluorene, pentacene, titanyl phthalocyanine, and rubrene; the metal oxide semiconductor material comprises at least one of zinc oxide, indium zinc oxide, zinc tin oxide, gallium indium zinc oxide and zirconium indium zinc oxide (ZrInZnO).
The invention also provides a forming method of the barrier layer on the substrate in the display device, which comprises the following steps: coating a hydroxylated polydimethylsiloxane film layer on the substrate, then carrying out oxidation treatment on the polydimethylsiloxane film layer to form a silicon dioxide film layer on the surface of the polydimethylsiloxane film layer, and then carrying out low-temperature curing molding on the polydimethylsiloxane film layer.
Drawings
Fig. 1 and 2 are schematic views of display devices according to different embodiments of the present invention.
Reference numerals: the display device comprises a display device 100, a substrate 101, an encapsulation layer 110, an electron light-emitting layer 108, a light-emitting layer electrode 109, a barrier layer 102, an active layer 103, a source-drain electrode 104, a gate electrode 105, an organic barrier layer 1021, and an inorganic barrier layer 1022. A first pixel electrode 106 and a second pixel electrode 107.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
To solve some technical problems in the related art, the present invention provides a display device 100.
A display device 100 of an embodiment of the present invention is described below with reference to the drawings.
As shown in fig. 1 and 2, a display device 100 according to an embodiment of the present invention includes: a substrate 101, an encapsulation layer 110, an electron emission layer 108, and an emission layer electrode 109.
Specifically, the barrier layer 102 is laid on the substrate 101. At least a portion of the barrier layer 102 is disposed on a side of the substrate 101 facing the encapsulation layer 110. The electron emission layer 108 is disposed between the substrate 101 and the encapsulation layer 110, and the electron emission layer 108 is connected to the first pixel electrode 106 and the second pixel electrode 107. The light emitting layer electrode 109 is laid between the electronic light emitting layer 108 and the package layer 110, wherein an active layer 103, a source/drain electrode 104 and a gate electrode 105 are formed between the barrier layer 102 and the package layer 110, the source/drain electrode 104 is electrically connected with the active layer 103, the gate electrode 105 is respectively insulated from the active layer 103 and the source/drain electrode 104, the source/drain electrode 104 is connected with the first pixel electrode 106, and the gate electrode 105 is connected with the second pixel electrode 107.
According to the display device 100 of the embodiment of the invention, the compensation electrode formed by the pixel electrode layer can effectively improve the stability and reduce the pixel area increased by the circuit design technology.
Under the condition of illumination or heating bias voltage, the thin film transistor formed on the substrate 101 can prevent the threshold voltage of the thin film transistor from drifting, so that the reliability of the thin film transistor is improved, the complexity of the design of the threshold voltage compensation circuit is simplified, and the display quality of the OLED flexible display panel is improved.
In addition, while the characteristic stability is improved, the preparation process of the barrier layer 102 is simple, the cost is reduced, the preparation process efficiency is improved, and the stability of the device is improved.
The display device 100 of the invention can prevent the threshold voltage of the thin film transistor formed on the substrate 101 from drifting under the condition of illumination or heating bias voltage, thereby improving the reliability of the thin film transistor, simplifying the complexity of the design of the threshold voltage compensation circuit and further improving the display quality of the OLED flexible display panel; the characteristic stability is improved, meanwhile, the preparation process of the barrier layer 102 is simple, the cost is reduced, the preparation process efficiency is improved, and the stability of the device is improved.
In addition, the display device 100 according to the above embodiment of the present invention may further have the following additional technical features:
the barrier layer 102 in the present invention may be an organic barrier layer 1021, an inorganic barrier layer 1022, or the like, or may be a combination of various types of barrier layers 102.
As shown in fig. 1 and 2, the barrier layer 102 includes an organic barrier layer 1021 and an inorganic barrier layer 1022. The organic barrier layer 1021 and the inorganic barrier layer 1022 cooperate to effectively block water and other factors that may damage the stability of the display device 100, thereby improving the stability of the display device 100.
In some embodiments of the invention, the barrier layer on the flexible OLED substrate is formed by alternately depositing a polymer film and an inorganic material film, so that the good barrier property of the inorganic material can be utilized, the continuous growth of internal defects of the inorganic material can be blocked by the organic material, the permeation path of Water vapor and Oxygen molecules can be prolonged, and the WVTR (Water vapor Transmission Rate) and the OTR (Oxygen Transmission Rate) can be effectively reduced. However, the barrier layer is prepared by at least two steps, the steps are complicated, different equipment is required to be invested, especially Plasma Enhanced Chemical Vapor Deposition (PECVD) is required when hydrophilic materials, especially inorganic hydrophilic materials, are involved, and the equipment is expensive. In addition, delamination is likely to occur due to interfacial problems between organic and inorganic materials.
To this end, the present invention provides some of the better barrier layers 102 and their manner of formation.
As shown in fig. 1 and 2, the organic barrier layer 1021 is disposed on the substrate 101, the inorganic barrier layer 1022 is formed on a surface of the organic barrier layer 1021, and the organic barrier layer 1021 is surface-treated to form the inorganic barrier layer 1022. The inorganic barrier layer 1022 formed by surface treatment of the organic barrier layer 1021 enables strength between the organic barrier layer 1021 and the inorganic barrier layer 1022 to be high and stability to be good, and a process of forming the inorganic barrier layer 1022 on the surface of the organic barrier layer 1021 is easy, thereby reducing process difficulty.
For example, a simple and effective method for preparing the barrier layer 102 provided by the present invention is as follows:
1) coating a hydroxylated PDMS film layer on the flexible substrate 101 by a coating method or a spin coating method;
2) the PDMS film is then subjected to an oxidation treatment (e.g., UV/O)3Treatment) of the surface of the PDMS film on the side closer to the oxidation treatment, SiO which is slightly harder than the PDMS film is formed on the surface of the PDMS film on the side closer to the oxidation treatment2A film layer;
3) and then, carrying out low-temperature curing molding (for example, curing at 60 ℃ for 4 hours) on the PDMS film, and forming an inorganic-organic insulating layer material on the flexible substrate 101 to be used as a barrier layer 102 material of the flexible OLED substrate 101. The characteristic stability is improved, the preparation process of the barrier layer 102 is simple, the cost is reduced, and the preparation process efficiency is improved.
In addition, Polydimethylsiloxane (PDMS) is an organic silicon polymer, has electrical insulation and high and low temperature resistance, can be used for a long time at a temperature of between 50 ℃ below zero and 250 ℃, has large compressibility, low surface tension and good hydrophobicity and moisture resistance, and is used in the field of electrical and electronic industries. The low surface energy properties of PDMS make it very easy to achieve a smooth, uniform coating after being fluid. The PDMS polymer may be modified according to various requirements. The modification of PDMS can be a hydroxylated modification or a polystyrene block PDMS (i.e., PS-b-PDMS), or other block PDMS material. The modified PDMS may be described as a derivative thereof.
As described above, it is preferable that the organic barrier layer 1021 is a polydimethylsiloxane layer and the inorganic barrier layer 1022 is a silicon dioxide layer.
The organic barrier layer 1021 may be a siloxane-based organic material, but is not limited to hydroxylated polydimethylsiloxane, such as polystyrene block polydimethylsiloxane and its derivatives, which also have lyophilic properties, and which can be converted to a lyophobic inorganic silica layer after oxidation, and the same technical effects can be achieved.
In the present invention, there are various formation methods of the thin film transistor, including but not limited to the following embodiments.
As shown in fig. 1, the active layer 103 is disposed on the barrier layer 102, and the source/drain electrode 104 is formed on the barrier layer 102; as shown in fig. 2, the active layer 103 is disposed on the barrier layer 102, and the source/drain electrodes 104 are formed on the active layer 103.
In addition, as shown in fig. 1 and 2, the gate electrode 105 is spaced apart from the active layer 103, and an insulating layer is deposited between the gate electrode 105 and the active layer 103 in order to improve stability of the thin film transistor and the display device 100.
In some embodiments of the present invention, the substrate 101 is a flexible substrate 101. Preferably, the substrate 101 is a polyimide film or a polyethylene naphthalate film.
In addition, in the present invention, at least one of the substrate 101 and the active layer 103 includes at least one of an organic semiconductor and a metal oxide semiconductor.
Preferably, the organic semiconductor material comprises at least one of polythiophene, polyaniline, polypyrrole, polyfluorene, pentacene, titanyl phthalocyanine, and rubrene.
Further, the metal oxide semiconductor material includes at least one of zinc oxide, indium zinc oxide, zinc tin oxide, gallium indium zinc oxide, and zirconium indium zinc oxide (ZrInZnO).
The compensation electrode formed on the pixel electrode layer can effectively improve the stability and reduce the pixel area increased by the circuit design technology. The beneficial effects are as follows: under the condition of illumination or heating bias voltage, the threshold voltage of the thin film transistor formed on the substrate 101 can be prevented from drifting, so that the reliability of the thin film transistor is improved, and the display quality of the OLED flexible display panel is improved.
The flexible display substrate 101 and the active layer 103 of the display device may be an organic semiconductor material and a metal oxide semiconductor material. The organic semiconductor material can be polythiophene (P3HT), Polyaniline (PAE), polypyrrole, Polyfluorene (PF), pentacene, titanium phthalocyanine oxide, rubrene, etc.; the metal oxide semiconductor material can be made of one or more of zinc oxide (ZnO), indium zinc oxide (InZnO), zinc tin oxide (ZnSnO), gallium indium zinc oxide (GaInZnO) and zirconium indium zinc oxide (ZrInZnO).
The invention provides a preparation method of a flexible substrate 101 with a top gate structure and a display device 100. The compensation electrode formed by the pixel electrode layer can effectively improve the stability and reduce the pixel area increased by the circuit design technology; the barrier layer 102 formed on the surface of the substrate 101 has a simple preparation process and low cost. The preparation process comprises the following steps:
1. forming a source-drain electrode 104, an active layer 103, a gate electrode 105, and a pixel electrode on a flexible substrate 101; one of the pixel electrodes is electrically connected with the drain electrode to provide an electric signal for the TFT; one pixel electrode is electrically connected with the gate electrode 105, so that the pixel electrode adjusts an electric signal of the gate electrode 105, and the threshold voltage drift is reduced, thereby improving the reliability of the thin film transistor;
2. preparing a barrier layer 102 between the flexible substrate and the TFT electrode, wherein the material of the barrier layer 102 is a layer of hydroxyl functionalized PDMS polymer or a derivative thereof, and performing oxidation treatment from the top of the substrate 101 to form a layer of SiO on one surface in the treatment direction2A film; the prepared barrier layer 102 can utilize the good barrier property of the inorganic material, and can also block the continuous growth of the internal defects of the inorganic material through the organic material, prolong the permeation path of water vapor and oxygen molecules, and effectively reduce WVTR (WaterVapor Transmission Rate) and OTR (Oxygen Transmission Rate);
3. on the flexible substrate 101, an anode or a cathode of the organic electronic functional layer is formed by a pixel electrode, the organic electronic functional layer is prepared by an ink-jet printing method, and an electrode above the organic electronic functional layer and the encapsulation layer 110 together form an OLED display device.
A method of forming a barrier layer on a substrate according to the present invention will be described with reference to the accompanying drawings.
The forming method of the barrier layer on the substrate comprises the following steps: coating a hydroxylated polydimethylsiloxane film layer on the substrate, then carrying out oxidation treatment on the polydimethylsiloxane film layer to form a silicon dioxide film layer on the surface of the polydimethylsiloxane film layer, and then carrying out low-temperature curing molding on the polydimethylsiloxane film layer.
The molding method can be applied to the aforementioned display device 100.
Some embodiments are described below with reference to the accompanying drawings.
Embodiment mode 1
As shown in figure 1
1. Forming a barrier layer 102 on a flexible substrate 101;
2. forming patterns of an organic semiconductor active layer 103 and a source drain electrode 104 on the barrier layer 102, wherein the source drain electrode 104 is electrically connected with the active layer 103;
3. forming a gate electrode 105 on the pattern of the source-drain electrode 104 with an insulating layer material deposited between the two layers;
4. preparing a pixel electrode pattern on the gate electrode 105, wherein the first pixel electrode 106 is connected with the drain electrode, the second pixel electrode 107 is connected with the gate electrode 105, and the threshold voltage of the pixel electrode is adjusted by an electrical signal provided by the second pixel electrode 107 to reduce the threshold voltage drift, so that the reliability of the thin film transistor is improved; an insulating layer material is provided between the gate electrode 105 and the pixel electrode pattern; the flexible display substrate 101 with the top gate structure is formed;
5. coating an organic electronic functional layer (such as the electronic luminescent layer 108) on the pixel electrode pattern by adopting an ink-jet printing method;
6. an EL electrode (such as the aforementioned light-emitting layer electrode 109) is formed over the organic electronic light-emitting layer 108, an encapsulating material layer (i.e., the aforementioned encapsulating layer 110) is formed on the electrode pattern, and a flexible display substrate 101 and a display device of a top gate structure are formed.
The formation steps of the barrier layer 102 are as follows:
1) coating a hydroxylated PDMS film (such as the organic barrier layer 1021) on the gate pattern by coating or spin-coating;
2) the PDMS film is then subjected to an oxidation treatment (e.g., UV/O)3Treatment) of the surface of the PDMS film on the side closer to the oxidation treatment, SiO which is slightly harder than the PDMS film is formed on the surface of the PDMS film on the side closer to the oxidation treatment2A film layer (such as the inorganic barrier layer 1021);
3) and then, carrying out low-temperature curing molding (for example, curing at 60 ℃ for 4 hours) on the PDMS film, forming an inorganic-organic insulating layer material above the flexible substrate 101, wherein the organic barrier layer 1021 and the inorganic barrier layer 1022 are used as barrier layer 102 materials.
Embodiment mode 2
As shown in fig. 2
1. Forming a barrier layer 102 on a flexible substrate 101;
2. forming a metal oxide semiconductor active layer 103 on the barrier layer 102;
3. forming source-drain electrodes 104 and a gate electrode 105 on the metal oxide semiconductor active layer 103, wherein an insulating layer material is deposited between the active layer 103 and the gate electrode 105;
4. preparing a pixel electrode pattern on the gate electrode 105, wherein the first pixel electrode 106 is connected with the drain electrode, the second pixel electrode 107 is connected with the gate electrode 105, and the threshold voltage of the pixel electrode is adjusted by an electrical signal provided by the second pixel electrode 107 to reduce the threshold voltage drift, so that the reliability of the thin film transistor is improved; an insulating layer material is provided between the gate electrode 105 and the pixel electrode pattern; the flexible display substrate 101 with the top gate structure is formed;
5. coating an organic electronic functional layer (such as the electronic luminescent layer 108) on the pixel electrode pattern by adopting an ink-jet printing method;
6. an EL electrode (e.g., the aforementioned light-emitting layer electrode 109) is formed over the organic electron light-emitting layer 108, an encapsulating material layer (e.g., the aforementioned encapsulating layer 109) is formed on the electrode pattern, and a flexible display substrate 101 and a display device of a top gate structure are formed.
The formation steps of the barrier layer 102 are as follows:
1) coating a hydroxylated PDMS film (such as the organic barrier layer 1021) on the gate pattern by coating or spin-coating;
2) the PDMS film is then subjected to an oxidation treatment (e.g., UV/O)3Treatment) of the surface of the PDMS film on the side closer to the oxidation treatment, SiO which is slightly harder than the PDMS film is formed on the surface of the PDMS film on the side closer to the oxidation treatment2A film layer (such as the inorganic barrier layer 1021);
3) and then, carrying out low-temperature curing molding (for example, curing at 60 ℃ for 4 hours) on the PDMS film, forming an inorganic-organic insulating layer material above the flexible substrate 101, wherein the organic barrier layer 1021 and the inorganic barrier layer 1022 are used as barrier layer 102 materials.
According to the display device 100 provided by the embodiment of the invention, the barrier layer 102 of the flexible OLED substrate 101 is prepared from siloxane organic materials to form a film layer with inorganic-organic materials, so that the characteristic stability is improved, the preparation process of the barrier layer 102 is simple, the cost is reduced, and the preparation process efficiency is improved; the compensation electrode formed on the pixel electrode layer can effectively improve the stability, simplify the complexity of the design of the threshold voltage compensation circuit, reduce the pixel area increased by the circuit design technology, improve the stability of the device and further improve the display quality of the OLED flexible display panel; the barrier layer 102 material can block water vapor and improve the characteristic stability, and meanwhile, the barrier layer 102 is simple in preparation process, low in cost and capable of improving the preparation process efficiency.
In the present invention, SiO is generated by oxidizing PDMS by UV (ultraviolet) or ozone2The method is used for manufacturing the barrier layer 102 in the flexible substrate 101, and has the characteristics of simple preparation process, low cost and good water vapor barrier effect.
In addition, the general PDMS is not easy to be changed by the external chemical action because of the compact chain structure, such as not being easy to be oxidized to form SiO2Layers, but PDMS modified with suitable degree of polymerization or end and side groups can be altered by external chemical action.
In the invention, the compensation electrode formed by the pixel electrode layer can effectively improve the stability, simplify the complexity of the design of the threshold voltage compensation circuit and jointly achieve the purpose of preparing the flexible display device with stable electrical characteristics, thereby expanding the application field of the flexible display device.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A display device, comprising:
the substrate is paved with a barrier layer;
the packaging layer, at least one part of the barrier layer is arranged on one side of the substrate facing the packaging layer;
the electronic light-emitting layer is arranged between the substrate and the packaging layer, and a first pixel electrode and a second pixel electrode are connected to the electronic light-emitting layer;
a light emitting layer electrode laid between the electron light emitting layer and the encapsulation layer,
an active layer, a source drain electrode and a gate electrode are formed between the blocking layer and the packaging layer, the source drain electrode is electrically connected with the active layer, the gate electrode is insulated from the active layer and the source drain electrode respectively, the source drain electrode is connected with the first pixel electrode, and the gate electrode is connected with the second pixel electrode.
2. The display device according to claim 1, wherein the barrier layer comprises an organic barrier layer and an inorganic barrier layer.
3. The display device according to claim 2, wherein the organic barrier layer is laid on the substrate, the inorganic barrier layer is formed on a surface of the organic barrier layer, and the organic barrier layer is surface-treated to form the inorganic barrier layer.
4. A display device as claimed in claim 2 or 3, characterized in that the organic barrier layer is a polydimethylsiloxane layer and the inorganic barrier layer is a silicon dioxide layer.
5. A display device according to claim 2 or 3, wherein the active layer is provided on the barrier layer, and the source and drain electrodes are formed on the barrier layer or the active layer.
6. A display device as claimed in claim 2 or 3, wherein the gate electrode is spaced from the active layer with an insulating layer deposited therebetween.
7. A display device as claimed in claim 2 or 3, wherein the substrate is a flexible substrate, and the substrate is a polyimide film or a polyethylene naphthalate film.
8. A display device according to claim 2 or 3, wherein at least one of the substrate and the active layer comprises at least one of an organic semiconductor and a metal oxide semiconductor.
9. The display device according to claim 8, wherein the organic semiconductor material comprises at least one of polythiophene, polyaniline, polypyrrole, polyfluorene, pentacene, titanyl phthalocyanine, and rubrene;
the metal oxide semiconductor material comprises at least one of zinc oxide, indium zinc oxide, zinc tin oxide, gallium indium zinc oxide and zirconium indium zinc oxide (ZrInZnO).
10. A method of forming a barrier layer on a substrate in a display device according to any one of claims 1 to 9, wherein the method comprises:
coating a hydroxylated polydimethylsiloxane film layer on the substrate, then carrying out oxidation treatment on the polydimethylsiloxane film layer to form a silicon dioxide film layer on the surface of the polydimethylsiloxane film layer, and then carrying out low-temperature curing molding on the polydimethylsiloxane film layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887343A (en) * | 2012-12-21 | 2014-06-25 | 北京京东方光电科技有限公司 | Thin film transistor and manufacturing method thereof, array substrate and display device |
| CN204595398U (en) * | 2015-05-26 | 2015-08-26 | 京东方科技集团股份有限公司 | A kind of array base palte and display device |
| CN105514143A (en) * | 2014-10-13 | 2016-04-20 | 乐金显示有限公司 | Organic light emitting diode display panel and method of fabricating same |
| CN106647055A (en) * | 2016-11-30 | 2017-05-10 | 上海中航光电子有限公司 | Display panel and display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9276050B2 (en) * | 2014-02-25 | 2016-03-01 | Lg Display Co., Ltd. | Organic light emitting display device |
-
2017
- 2017-05-11 CN CN201710331482.2A patent/CN107154421B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887343A (en) * | 2012-12-21 | 2014-06-25 | 北京京东方光电科技有限公司 | Thin film transistor and manufacturing method thereof, array substrate and display device |
| CN105514143A (en) * | 2014-10-13 | 2016-04-20 | 乐金显示有限公司 | Organic light emitting diode display panel and method of fabricating same |
| CN204595398U (en) * | 2015-05-26 | 2015-08-26 | 京东方科技集团股份有限公司 | A kind of array base palte and display device |
| CN106647055A (en) * | 2016-11-30 | 2017-05-10 | 上海中航光电子有限公司 | Display panel and display device |
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