CN107154375B - Electrostatic chuck device and integration process thereof - Google Patents
Electrostatic chuck device and integration process thereof Download PDFInfo
- Publication number
- CN107154375B CN107154375B CN201610121581.3A CN201610121581A CN107154375B CN 107154375 B CN107154375 B CN 107154375B CN 201610121581 A CN201610121581 A CN 201610121581A CN 107154375 B CN107154375 B CN 107154375B
- Authority
- CN
- China
- Prior art keywords
- laser welding
- electrostatic chuck
- dielectric layer
- layer
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 230000010354 integration Effects 0.000 title claims abstract description 18
- 238000003466 welding Methods 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000006104 solid solution Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
The invention discloses an electrostatic chuck device and an integration process thereof, and belongs to the technical field of semiconductor wafer processing. The integration process of the electrostatic chuck does not need to be subjected to high temperature, the dielectric layer and the electrode material are not deformed, the electrostatic force is uniformly distributed, and the integrated electrostatic chuck has high sealing strength and good air tightness.
Description
Technical Field
The present invention relates to a semiconductor wafer processing apparatus and an integration process thereof, and more particularly, to an electrostatic chuck apparatus and an integration process thereof.
Background
The traditional electrostatic chuck is manufactured by integrally sintering alumina ceramics with built-in electrodes at high temperature. The preparation method comprises the following steps: forming an alumina ceramic sintered body; a step of printing an electrode paste for electrostatic electrodes on the alumina sintered body; filling alumina granulated powder on the electrode paste for molding by a metal mold; and a step of firing the molded article integrated with the step of molding by a metal mold (see patent document 1: japanese patent application laid-open No. 2005-343733). The method for manufacturing the electrostatic chuck by sintering the ceramics at high temperature inevitably brings problems: the dielectric layer and the electrode layer after firing are deformed to a certain extent, thereby affecting the uniformity of electrostatic force of the electrostatic chuck. Even if the electrostatic electrode is deformed and sharp in cross section, and formed into such a sharp shape, cracks are likely to occur due to stress concentration, electric field concentration, and the like, and it is difficult to ensure the durability of the electrostatic chuck.
Some of the patents have improved the manufacturing method of the electrostatic chuck for suppressing the deformation of the cross section of the electrostatic chuck electrode by hot press firing a laminate sintered body in which a pair of ceramic calcined bodies are stacked so as to sandwich an electrostatic electrode of a predetermined shape or a precursor thereof (see patent document 2: application publication No. CN104835770 a). However, the method of patent document 2 cannot fundamentally avoid deformation of the dielectric layer and the electrode layer due to high-temperature sintering.
Disclosure of Invention
The invention provides an electrostatic chuck device with the advantages of no deformation of an electrode layer and a dielectric layer, uniform electrostatic adsorption force, high packaging strength and good air tightness and an integration process thereof.
In order to solve the technical problems, the invention provides the following technical scheme:
in one aspect, the invention provides an electrostatic chuck device and an integration process thereof, the electrostatic chuck device comprises a dielectric layer, an electrode layer, an insulating layer and a metal matrix, wherein the dielectric layer is arranged above the insulating layer, the electrode layer is packaged between the dielectric layer and the insulating layer through a laser welding process, and the insulating layer is arranged on the metal matrix.
Further, the dielectric layer is made of a sapphire material.
Further, the insulating layer is made of sapphire and ceramic materials.
Further, a groove for embedding the electrode layer is formed in the insulating layer.
Further, the size of the vent hole provided on the electrode layer is larger than the sizes of the vent holes provided on the dielectric layer and the insulating layer.
Further, the electrode layer is made of copper, silver, tungsten or graphene.
On the other hand, the invention also provides an integration process of the electrostatic chuck device, wherein laser welding is performed in a laser welding area between the dielectric layer and the insulating layer through a laser welding process, a connecting solid solution is formed at an interface to realize integration, and the insulating layer is arranged on the metal substrate.
The invention has the following beneficial effects:
compared with the prior art, the integration process of the electrostatic chuck laser welding does not need to be subjected to high temperature, the dielectric layer and the electrode layer cannot deform, and electrostatic force is uniformly distributed. And, the electrode layer is encapsulated between the dielectric layer and the insulating layer by a laser welding process, high encapsulation strength and good air tightness can be achieved. In addition, the laser welding process is simple and easy to operate.
Drawings
FIG. 1 is a schematic cross-sectional view of a static device of an electrostatic chuck according to the prior art;
FIG. 2 is a schematic cross-sectional view of an electrostatic chuck electrostatic device according to the present invention;
fig. 3 is a cross-sectional view of a laser welded region of a dielectric layer in accordance with the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved more apparent, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
In one aspect, the present invention provides an electrostatic chuck apparatus, as shown in fig. 2, comprising a dielectric layer 4, an electrode layer 5, an insulating layer 6, and a metal base 7. The dielectric layer is arranged above the insulating layer, the electrode layer is packaged between the dielectric layer and the insulating layer through a laser welding process, and the insulating layer is arranged on the metal matrix. As shown in fig. 3, the laser welding region is implemented in the air hole and electrostatic chuck edge region 8. Before welding, a welding tool is manufactured according to laser welding patterns and precision requirements and is used for clamping a workpiece to be welded during laser welding. The laser welding adopts continuous laser, and the power range is 100w-300w. The laser welding is performed at a single point instantaneous temperature of 200-400 ℃ and a single point duration of 5ms-10ms. Taking an 8 inch electrostatic chuck as an example, the entire laser welding process lasts for about 4 hours.
Compared with the prior art, fig. 1 is a schematic cross-sectional structure of an electrostatic chuck electrostatic device in the prior art, wherein 1 is an insulating layer; 2. an electrode layer; 3. a metal base. The integration process of the electrostatic chuck laser welding does not need to be subjected to high temperature, has no influence on the dielectric layer and the electrode material, and has no deformation after integration, thereby ensuring uniform distribution of electrostatic force of the electrostatic chuck. And, the electrode layer is encapsulated between the dielectric layer and the insulating layer by a laser welding process, high encapsulation strength and good air tightness can be achieved. In addition, the laser welding process is simple and easy to operate.
The dielectric layer is preferably provided with a recess for embedding the electrode layer. Specifically, the groove is arranged on one surface of the dielectric layer, which is welded with the insulating layer by laser, and the structure can further ensure the stability of the electrode layer between the insulating layer and the dielectric layer and improve the uniformity of electrostatic adsorption force of the invention.
In the present invention, the size of the vent hole provided on the electrode layer is preferably larger than the sizes of the vent holes provided on the dielectric layer and the insulating layer to ensure electrical insulation.
In the present invention, the insulating layer is preferably made of sapphire or ceramic.
On the other hand, the invention also provides an integration process of the electrostatic chuck device, wherein laser welding is performed in a laser welding area between the dielectric layer and the insulating layer through a laser welding process, a connecting solid solution is formed at an interface to realize integration, and the insulating layer is arranged on the metal matrix.
The electrode layer can be made of copper, silver, tungsten or graphene or other conductive materials, and the conductive effect can be guaranteed without increasing the cost by selecting the materials.
In summary, the invention has the following beneficial effects:
1. the electrostatic chuck laser welding integration process reduces the risk of high-temperature sintering of ceramics in the traditional integration process, avoids deformation of a dielectric layer and an electrode layer, and ensures that the electrostatic adsorption force of the electrostatic chuck is uniform;
2. the electrostatic chuck integrated by the laser welding technology has high packaging strength and good air tightness;
3. the electrostatic chuck has the advantages of simple structure, easy manufacture and lower cost, and can be widely popularized and used.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (2)
1. The electrostatic chuck device is characterized by comprising a dielectric layer, an electrode layer, an insulating layer and a metal substrate, wherein a first laser welding area is arranged on the dielectric layer, the dielectric layer is arranged above the insulating layer, a second laser welding area corresponding to the first laser welding area is arranged on the insulating layer, and the electrode layer is arranged between the dielectric layer and the insulating layer;
the dielectric layer is provided with a groove for embedding the electrode layer, and a protection interval of 0.1mm-0.5mm exists between the groove and the laser welding area;
the dielectric layer is made of a sapphire material;
the electrode layer is made of copper, silver, tungsten or graphene;
the size of the vent holes arranged on the electrode layer is larger than that of the vent holes arranged on the dielectric layer and the insulating layer;
and the dielectric layer and the insulating layer are subjected to laser welding in a laser welding area through a laser welding process, a connecting solid solution is formed at the interface of the laser welding area, integration is realized, and the insulating layer is arranged on the metal matrix.
2. The electrostatic chuck apparatus of claim 1, wherein the insulating layer is a sapphire or ceramic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610121581.3A CN107154375B (en) | 2016-03-03 | 2016-03-03 | Electrostatic chuck device and integration process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610121581.3A CN107154375B (en) | 2016-03-03 | 2016-03-03 | Electrostatic chuck device and integration process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107154375A CN107154375A (en) | 2017-09-12 |
| CN107154375B true CN107154375B (en) | 2023-11-24 |
Family
ID=59791627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610121581.3A Active CN107154375B (en) | 2016-03-03 | 2016-03-03 | Electrostatic chuck device and integration process thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107154375B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529908A (en) * | 2001-06-28 | 2004-09-15 | ��ķ�о�����˾ | Ceramic electrostatic chuck assembly and method of making |
| CN1864255A (en) * | 2003-10-09 | 2006-11-15 | Snt株式会社 | Electro-static chuck with non-sintered aln and a method of preparing the same |
| CN101894687A (en) * | 2010-06-24 | 2010-11-24 | 彩虹集团公司 | Dye-sensitized solar cell encapsulation method |
| CN101924176A (en) * | 2010-07-12 | 2010-12-22 | 深圳大学 | Light-emitting diode packaging structure and packaging method thereof |
| CN103673863A (en) * | 2013-12-03 | 2014-03-26 | 浙江中欣动力测控技术有限公司 | Capacitive sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8987639B2 (en) * | 2012-09-05 | 2015-03-24 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck with radiative heating |
-
2016
- 2016-03-03 CN CN201610121581.3A patent/CN107154375B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529908A (en) * | 2001-06-28 | 2004-09-15 | ��ķ�о�����˾ | Ceramic electrostatic chuck assembly and method of making |
| CN1864255A (en) * | 2003-10-09 | 2006-11-15 | Snt株式会社 | Electro-static chuck with non-sintered aln and a method of preparing the same |
| CN101894687A (en) * | 2010-06-24 | 2010-11-24 | 彩虹集团公司 | Dye-sensitized solar cell encapsulation method |
| CN101924176A (en) * | 2010-07-12 | 2010-12-22 | 深圳大学 | Light-emitting diode packaging structure and packaging method thereof |
| CN103673863A (en) * | 2013-12-03 | 2014-03-26 | 浙江中欣动力测控技术有限公司 | Capacitive sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107154375A (en) | 2017-09-12 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 100176 floor 2, building 2, yard 19, Kechuang 10th Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing (Yizhuang group, high-end industrial area of Beijing Pilot Free Trade Zone) Applicant after: BEIJING U-PRECISION TECH Co.,Ltd. Address before: 100084 room b902, learning and research complex building, Tsinghua University, Haidian District, Beijing Applicant before: BEIJING U-PRECISION TECH Co.,Ltd. |
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| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |