CN107154375A - Electrostatic chuck apparatus and its integrated technique - Google Patents
Electrostatic chuck apparatus and its integrated technique Download PDFInfo
- Publication number
- CN107154375A CN107154375A CN201610121581.3A CN201610121581A CN107154375A CN 107154375 A CN107154375 A CN 107154375A CN 201610121581 A CN201610121581 A CN 201610121581A CN 107154375 A CN107154375 A CN 107154375A
- Authority
- CN
- China
- Prior art keywords
- electrostatic chuck
- dielectric layer
- insulating barrier
- laser welding
- chuck apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000003466 welding Methods 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 13
- 239000011159 matrix material Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000006104 solid solution Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 230000000649 photocoagulation Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000007772 electrode material Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 239000002003 electrode paste Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000037396 body weight Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
The invention discloses a kind of electrostatic chuck apparatus and its integrated technique, belong to processing technology of semiconductor wafer field, the electrostatic chuck apparatus includes dielectric layer, electrode layer, insulating barrier and metallic matrix, the dielectric layer is arranged on the top of insulating barrier, the electrode layer is encapsulated between the dielectric layer and insulating barrier by laser welding process, and the insulating barrier is arranged on the metallic matrix.The integrated technique of the electrostatic chuck of the present invention need not undergo high temperature, and deformation is not present in dielectric layer and electrode material, and electrostatic force is evenly distributed, and it is integrated after sealing strength is high, air-tightness is good.
Description
Technical field
The present invention relates to semiconductor wafer processing device and its integrated technique, a kind of electrostatic card is particularly related to
Disk device and its integrated technique.
Background technology
The preparation method of traditional electrostatic chuck is to carry out integrated high temp to the aluminium oxide ceramics of built-in electrode
Sintering.Its preparation method includes：The process for forming Alumina Ceramics Sintering body；On the alumina sintered body
Print the process of the electrode paste of electrostatic attraction electrode；Aluminum oxide pelletizing is filled on the electrode paste and carries out gold
Belong to the process of mold forming；The work that formed body by the integrated process of metal mold forming is burnt till
Sequence is (with reference to patent document 1：Japanese Unexamined Patent Publication 2005-343733 publications).This ceramic high temperature sintering
The preparation method of electrostatic chuck inevitably bring some problems：Dielectric layer and electrode layer after burning till
There is a certain degree of deformation, so as to have impact on the uniformity of electrostatic chuck electrostatic force.Or even electrostatic
The cross section deformation of electrode and it is sharp at an acute angle, when forming so sharp shape, due to stress concentration and
The medium easy generation crackle of electric field collection, it is difficult to ensure the durability of electrostatic chuck.
Some patents is suppress the cross section deformation of electrostatic clamp electrode, and the preparation method to electrostatic chuck is carried out
Improve, its be in the way of the electrostatic attraction electrode or its precursor that sandwich regulation shape by a pair of ceramic roastings
The folded stacking sintered body of body weight carries out hot pressing and burnt till (with reference to patent document 2：Application publication number CN
104835770 A).But the preparation method of patent document 2 can not fundamentally avoid what high temperature sintering was caused
The deformation of dielectric layer and electrode layer.
The content of the invention
A kind of electrode layer of present invention offer and dielectric layer are indeformable, electrostatic adsorption force is uniform, package strength
High, air-tightness good electrostatic chuck apparatus and its integrated technique.
In order to solve the above technical problems, present invention offer technical scheme is as follows：
On the one hand, a kind of electrostatic chuck apparatus of present invention offer and its integrated technique, including dielectric layer,
Electrode layer, insulating barrier and metallic matrix, the dielectric layer are arranged on the top of insulating barrier, the electrode
Layer is encapsulated between the dielectric layer and insulating barrier by laser welding process, and the insulating barrier is arranged on
On the metallic matrix.
Further, the dielectric layer is sapphire material.
Further, the insulating barrier is sapphire, ceramic material.
Further, the groove for being embedded in the electrode layer is provided with the insulating barrier.
Further, the vent size being arranged on the electrode layer, which is more than, is arranged on the dielectric layer
With the size of the passage on insulating barrier.
Further, the material of the electrode layer is copper, silver, tungsten or graphene.
On the other hand, the present invention also provides a kind of integrated technique of electrostatic chuck apparatus, the dielectric layer
Laser welding is carried out in laser welding region by laser welding process between insulating barrier, at interface
Place forms connection solid solution, realizes integrated, the insulating barrier is arranged on the metallic matrix.
The invention has the advantages that：
Compared with prior art, the integrated technique of electrostatic chuck laser welding of the invention is high without experience
Temperature, dielectric layer and electrode layer will not deform, and electrostatic force is evenly distributed.Also, pass through Laser Welding
Connect technique electrode layer is encapsulated between the dielectric layer and insulating barrier, it is possible to achieve high package strength
And good air-tightness.In addition, laser welding process is simple, it is easy to operate.
Brief description of the drawings
The cross-sectional view of the quiet device of Fig. 1 electrostatic chucks of the prior art；
Fig. 2 is the cross-sectional view of the quiet device of electrostatic chuck of the present invention；
Fig. 3 is the sectional view in the dielectric layer laser welding region of the present invention.
Embodiment
, below will knot to make the technical problem to be solved in the present invention, technical scheme and advantage clearer
Drawings and the specific embodiments are closed to be described in detail.
On the one hand, the present invention a kind of electrostatic chuck apparatus, electrostatic chuck apparatus are provided as shown in Fig. 2
A kind of electrostatic chuck apparatus, including dielectric layer 4, electrode layer 5, insulating barrier 6 and metallic matrix 7.It is situated between
Electric layer is arranged on the top of insulating barrier, and electrode layer is encapsulated in dielectric layer and insulation by laser welding process
Between layer, insulating barrier is arranged on metallic matrix.Laser welding region as shown in figure 3, in stomata and
Implement in electrostatic chuck edge region 8.Needed before welding according to laser welding figure and required precision,
A welding tooling is made, workpiece to be welded is clamped during for laser welding.Laser welding is using continuous
Formula laser, power bracket is in 100w-300w.Single-point transient temperature during laser welding exists
200-400 DEG C, the single-point duration is in 5ms-10ms.By taking 8 inches of electrostatic chuck as an example, entirely
Laser beam welding continues about 4h time.
Compared with prior art, Fig. 1 shows for the cross-section structure of the quiet device of electrostatic chuck of the prior art
It is intended to, wherein, 1, insulating barrier；2nd, electrode layer；3rd, metal base.The electrostatic chuck of the present invention
The integrated technique of laser welding need not undergo high temperature, on dielectric layer and electrode material without influence, it is integrated after
Dielectric layer and electrode layer are without deformation, so as to ensure that electrostatic chuck electrostatic force is evenly distributed.Also, it is logical
Cross laser welding process electrode layer is encapsulated between the dielectric layer and insulating barrier, it is possible to achieve high
Package strength and good air-tightness.In addition, laser welding process is simple, it is easy to operate.
It is preferably provided for being embedded in the groove of electrode layer on dielectric layer.Specifically, groove is arranged on Jie
With the one side of insulating barrier laser welding in electric layer, this structure may further ensure that electrode layer in insulation
Stability between layer and dielectric layer, improves the uniformity of the electrostatic adsorption force of the present invention.
In the present invention, the vent size being arranged on electrode layer, which is preferably greater than, is arranged on dielectric layer and exhausted
The size of passage in edge layer, to ensure electrical insulating property.
In the present invention, insulating barrier is preferably sapphire, ceramics.
On the other hand, the present invention also provides a kind of integrated technique of electrostatic chuck apparatus, dielectric layer and absolutely
Laser welding is carried out in laser welding region by laser welding process between edge layer, in interface shape
Into connection solid solution, realize integrated, insulating barrier is arranged on metallic matrix.
Wherein, the material of electrode layer can be copper, silver, tungsten or graphene or other conductive materials, choosing
It can both ensure conductive effect with these materials, and not improve cost.
To sum up, the invention has the advantages that：
1st, electrostatic chuck laser welding integrated technique of the invention reduces ceramic in traditional integrated technique
The risk of high temperature sintering, it is to avoid the deformation of dielectric layer and electrode layer so that the electrostatic of electrostatic chuck is inhaled
Attached power is uniform；
2nd, the present invention is high by the package strength of the integrated electrostatic chuck of laser welding technology, air-tightness
It is good；
3rd, electrostatic chuck of the invention is simple in construction, and easy to manufacture, cost is relatively low, can be widely popularized
Use.
Described above is the preferred embodiment of the present invention, it is noted that for the general of the art
For logical technical staff, on the premise of principle of the present invention is not departed from, some change can also be made
Enter and retouch, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (6)
1. a kind of electrostatic chuck apparatus, it is characterised in that including dielectric layer, electrode layer, insulating barrier and
First laser welding region is provided with metallic matrix, the dielectric layer, the dielectric layer is arranged on institute
State and corresponding with the first laser welding region is provided with the top of insulating barrier, the insulating barrier
Dual-laser welding region, the electrode layer is arranged between the dielectric layer and insulating barrier.
2. electrostatic chuck apparatus according to claim 1, it is characterised in that the dielectric layer
On be provided with groove for being embedded in the electrode layer, itself and laser welding region are present
0.1mm-0.5mm guard band.
3. electrostatic chuck apparatus according to claim 1, it is characterised in that the dielectric layer
From sapphire material.
4. electrostatic chuck apparatus according to claim 1, it is characterised in that the insulating barrier
For sapphire or ceramic material.
5. according to any described electrostatic chuck apparatus in Claims 1-4, it is characterised in that
The material of the electrode layer is copper, silver, tungsten or graphene.
6. the integrated technique of any described electrostatic chuck apparatus in claim 1-5, its feature exists
In being swashed between the dielectric layer and insulating barrier by laser welding process in laser welding region
Photocoagulation, forms connection solid solution in the interface in laser welding region, realizes integrated, the insulation
Layer is arranged on the metallic matrix.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610121581.3A CN107154375B (en) | 2016-03-03 | 2016-03-03 | Electrostatic chuck device and integration process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610121581.3A CN107154375B (en) | 2016-03-03 | 2016-03-03 | Electrostatic chuck device and integration process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107154375A true CN107154375A (en) | 2017-09-12 |
| CN107154375B CN107154375B (en) | 2023-11-24 |
Family
ID=59791627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610121581.3A Active CN107154375B (en) | 2016-03-03 | 2016-03-03 | Electrostatic chuck device and integration process thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107154375B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529908A (en) * | 2001-06-28 | 2004-09-15 | ��ķ�о�����˾ | Ceramic electrostatic chuck assembly and method of making |
| CN1864255A (en) * | 2003-10-09 | 2006-11-15 | Snt株式会社 | Electro-static chuck with non-sintered aln and a method of preparing the same |
| CN101894687A (en) * | 2010-06-24 | 2010-11-24 | 彩虹集团公司 | Dye-sensitized solar cell encapsulation method |
| CN101924176A (en) * | 2010-07-12 | 2010-12-22 | 深圳大学 | Light-emitting diode packaging structure and packaging method thereof |
| US20140061180A1 (en) * | 2012-09-05 | 2014-03-06 | Varian Semiconductor Equipment Associates, Inc | Electrostatic chuck with radiative heating |
| CN103673863A (en) * | 2013-12-03 | 2014-03-26 | 浙江中欣动力测控技术有限公司 | Capacitive sensor |
-
2016
- 2016-03-03 CN CN201610121581.3A patent/CN107154375B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529908A (en) * | 2001-06-28 | 2004-09-15 | ��ķ�о�����˾ | Ceramic electrostatic chuck assembly and method of making |
| CN1864255A (en) * | 2003-10-09 | 2006-11-15 | Snt株式会社 | Electro-static chuck with non-sintered aln and a method of preparing the same |
| CN101894687A (en) * | 2010-06-24 | 2010-11-24 | 彩虹集团公司 | Dye-sensitized solar cell encapsulation method |
| CN101924176A (en) * | 2010-07-12 | 2010-12-22 | 深圳大学 | Light-emitting diode packaging structure and packaging method thereof |
| US20140061180A1 (en) * | 2012-09-05 | 2014-03-06 | Varian Semiconductor Equipment Associates, Inc | Electrostatic chuck with radiative heating |
| CN103673863A (en) * | 2013-12-03 | 2014-03-26 | 浙江中欣动力测控技术有限公司 | Capacitive sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107154375B (en) | 2023-11-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 100176 floor 2, building 2, yard 19, Kechuang 10th Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing (Yizhuang group, high-end industrial area of Beijing Pilot Free Trade Zone) Applicant after: BEIJING U-PRECISION TECH Co.,Ltd. Address before: 100084 room b902, learning and research complex building, Tsinghua University, Haidian District, Beijing Applicant before: BEIJING U-PRECISION TECH Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |