CN107146829B - The making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip and application - Google Patents
The making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip and application Download PDFInfo
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- CN107146829B CN107146829B CN201710388329.3A CN201710388329A CN107146829B CN 107146829 B CN107146829 B CN 107146829B CN 201710388329 A CN201710388329 A CN 201710388329A CN 107146829 B CN107146829 B CN 107146829B
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- 210000002268 wool Anatomy 0.000 title claims abstract description 132
- 235000008216 herbs Nutrition 0.000 title claims abstract description 130
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 93
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000005520 cutting process Methods 0.000 title claims abstract description 63
- 239000012530 fluid Substances 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims abstract description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000009210 therapy by ultrasound Methods 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims description 10
- 239000004094 surface-active agent Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 abstract description 9
- 239000004570 mortar (masonry) Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 238000002604 ultrasonography Methods 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- 239000002253 acid Substances 0.000 description 9
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 3
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 description 3
- 229920000053 polysorbate 80 Polymers 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 229910003638 H2SiF6 Inorganic materials 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229920002642 Polysorbate 65 Polymers 0.000 description 1
- 229920002651 Polysorbate 85 Polymers 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 229940099511 polysorbate 65 Drugs 0.000 description 1
- 229940113171 polysorbate 85 Drugs 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000002951 street drug Substances 0.000 description 1
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
Abstract
The present invention provides a kind of making herbs into wool preprocess methods of Buddha's warrior attendant wire cutting polysilicon chip, it uses the making herbs into wool pretreatment fluid of silicon carbide-containing, water to make medium, ultrasound pretreatment 2-5min is carried out to Buddha's warrior attendant wire cutting polysilicon chip under ultrasonic wave effect, obtains making herbs into wool pretreatment polysilicon chip；Wherein, the supersonic frequency when ultrasonic treatment is 20-100kHz, ultrasonic power 1500-3000W.The surface of gained making herbs into wool pretreatment polysilicon chip forms uniform, coarse damaging layer, and the polysilicon chip that the thickness of damaging layer can be cut with mortar compares favourably, so as to carry out making herbs into wool processing to it using existing conventional process for etching.The present invention also provides a kind of making herbs into wool to pre-process polysilicon chip, and the etching method comprising the making herbs into wool preprocess method and obtained making herbs into wool silicon chip product.
Description
Technical field
The invention belongs to Buddha's warrior attendant wire cutting polycrystalline silicon texturing technical fields, and in particular to a kind of Buddha's warrior attendant wire cutting polysilicon
The making herbs into wool preprocess method of piece and application.
Background technique
Silicon wafer is widely used in the fields such as photovoltaic solar, liquid crystal display and semiconductor, at present crystalline substance used in photovoltaic industry
The cutting of body silicon wafer mainly has mortar multi-wire cutting technology and diamond wire saw technology, and in contrast, the latter is using Buddha's warrior attendant
Stone line carries out multi-wire saw to polysilicon block and obtains polysilicon chip, and with cutting efficiency height, gained surface damage is few, stria
Shallow and close feature, and become the main flow direction of multi-wire cutting technology.
During manufacture of solar cells, silicon chip surface making herbs into wool is one of critical process.Polysilicon chip is mostly to adopt at present
With sour making herbs into wool, it is corroded using the damaging layer of silicon chip surface, forms texturing flannelette to reduce surface reflectivity, to mention
High solar cell photoelectric transformation efficiency.
With mortar cut polysilicon chip (as shown in Figure 1) compared with, Buddha's warrior attendant wire cutting polysilicon chip it is (as shown in Figure 2) with compared with
Shallow damaging layer, lower surface roughness.When carrying out making herbs into wool to it using traditional nitration mixture (hydrofluoric acid+nitric acid system), portion
Subregion can be shallower due to damaging layer and there is obvious less than normal, the partially shallow situation of flannelette, this makes Buddha's warrior attendant wire cutting polysilicon chip
Reflectivity after making herbs into wool is higher than the reflectivity after mortar cutting polycrystalline silicon texturing, reduces finally using electricity made from the silicon wafer
The transfer efficiency in pond.It therefore, is the preferable making herbs into wool flannelette of acquisition, it is necessary to which centainly pre- is carried out to diamond cut polysilicon chip
Processing, could use existing process for etching to carry out making herbs into wool to it.
Currently, Buddha's warrior attendant wire cutting polysilicon chip mainly first makes physics damaging layer or change in silicon chip surface before making herbs into wool processing
Damaging layer is learned, physical damnification layer can be carried out using grinding, plasma bombardment, laser treatment；The formation of chemical damage layer
Polycrystalline structure can be converted by the amorphous silicon of silicon chip surface by high-temperature process, or (such as by the black silicon technology of wet etching
CN105826410A, CN106340446A) it is formed.But the above treatment process is more complex, is unfavorable for industrial applications.
Summary of the invention
It can not directly be formed with existing process for etching in cell fabrication processes for diamond wire saw polysilicon chip
Uniformly, the problem of antiradar reflectivity flannelette,
In view of this, using and containing the present invention provides a kind of making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip
Silicon carbide, water making herbs into wool pretreatment fluid make medium, ultrasonic wave effect under the polysilicon chip of Buddha's warrior attendant wire cutting is pre-processed,
Uniform, coarse damaging layer is formed on polysilicon chip surface, the polysilicon chip that the thickness of damaging layer can be cut with mortar is mutually equal to
Beauty, so as to carry out making herbs into wool processing to it using existing conventional process for etching.
In a first aspect, the present invention provides a kind of making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip, including it is following
Step:
(1) making herbs into wool pretreatment fluid is prepared:
Silicon carbide powder is dispersed in water, making herbs into wool pretreatment fluid is obtained, wherein silicon carbide is in the making herbs into wool pretreatment fluid
In mass fraction be 2-10%；
(2) it pre-processes:
Buddha's warrior attendant wire cutting polysilicon chip is placed in the container equipped with the making herbs into wool pretreatment fluid, in Ultrasonic Conditions
Under, ultrasonic treatment 2-5min is carried out, making herbs into wool pretreatment polysilicon chip is obtained；Wherein, the supersonic frequency when ultrasonic treatment is
20-100kHz, ultrasonic power 1500-3000W.
In the present invention, high frequency (20-100kHz) vibration of ultrasonic wave passes to cleansing medium --- the making herbs into wool pretreatment
Liquid, the cleansing medium will generate the cavitation bubble of nearly vacuum under this high-frequency vibration, and cavitation bubble is to cleaning treatment object-
Buddha's warrior attendant wire cutting polysilicon chip generates strong " cavitation ".The moment that the cavitation that ultrasonic wave generates can be collapsed in bubble
Huge energy is released, can produce the microjet that speed is up to 110m/s, has strong impact power, microjet can be in cleansing medium
Silicon carbide provide kinetic energy, so that silicon carbide is hit polysilicon chip surface with high-speed motion, after silicon wafer rebounds continue cleaning be situated between
Silicon wafer is set to obtain uniform, coarse surface silicon wafer constant impingement by cavitation in matter.
Preferably, the liquid level of the making herbs into wool pretreatment fluid in a reservoir is 2-5cm.
Preferably, the temperature when ultrasonic treatment is controlled at 25-60 DEG C.Further preferably 25-40 DEG C.The application control
Make above-mentioned such liquid level and treatment temperature, it is ensured that generate surface more evenly, coarse on polysilicon chip surface.
Preferably, the mass ratio of the silicon carbide and water is 1:20~50.
Preferably, surfactant, the surface tension 35-72 of the pretreatment fluid are also contained in the making herbs into wool pretreatment fluid
Dynes per centimeter；The surfactant HLB value is 10-20.It specifically, can be OP-10, polysorbate65, polysorbate85, Tween 80
Deng.The cavitation intensity of ultrasonic wave can be improved in the presence of these specific surfactants, improves cleaning effect, is avoided that liquid
Surface tension is excessive to be not likely to produce the drawbacks such as cavitation.
Wherein, the mesh number of the silicon carbide powder more than 400 mesh (that is, partial size≤15 μm).Preferably 400-3000 mesh,
Further preferably 800-2000 mesh.Mesh number is higher, and the particle of silicon carbide is smaller, and the silicon carbide of suitable small particle size can be
Uniform, coarse surface is formed on silicon wafer under ultrasonic wave effect, if the granularity of silicon carbide is too big, can make to be formed on silicon wafer
Surface roughness it is inadequate, if the granularity of silicon carbide is too small, effective shock cannot be formed to silicon wafer.
Silicon carbide used is not spherical (spherical circularity is 1) in the present invention, it is preferable that the circularity of the silicon carbide is
0.85-0.95.Further preferably 0.88-0.92.
Circularity is defined as:Wherein A is particle area, and P is particle week
It is long.The circularity of silicon carbide can reflect the corner angle situation of its micro-shape, especially particle substantially, and the more grain corner the more sharp
Then circularity is poorer；Otherwise corner angle are round and smooth, and circularity is all right.The aspherical high rigidity silicon carbide with corner angle can be acted in ultrasonic wave
Under, at a relatively high speed, stronger impact force constant impingement is generated to Buddha's warrior attendant wire cutting polysilicon chip, make silicon wafer obtain uniformly, it is thick
Rough damage layer surface.
Preferably, when carrying out the ultrasonic treatment, at the same using the ultrasonic wave of two or more different frequency come
It carries out, wherein any three kinds or more of the frequency of the ultrasonic wave in 20-100kHz.It is further preferably same
The ultrasonic wave of Shi Caiyong three kinds or more different frequency carries out.
It is cleaned by ultrasonic using the ultrasonic wave of two or more different frequencies, the sound-filed simulation in container can be made more equal
Even, cleaning effect is more preferable.Specifically, the frequency of the ultrasonic wave is selected from any of 20,25,28,33,40,60,80 and 100kHz
Three kinds or more.
In an embodiment of the present invention, (container can become ultrasonic cleaning to the container equipped with the making herbs into wool pretreatment fluid
Machine) bottom array installs two or more (the preferably 3 or 3 or more) energy converters with different frequency, it is described not
Multiple energy converters of same frequency are corresponded to driving by multiple supersonic generators respectively.That is, a supersonic generator driving one
The energy converter of a frequency, each energy converter generate a kind of ultrasonic wave of frequency.
Preferably, the frequency of multiple energy converters is selected from 20-100kHz, but the frequency of each energy converter is different.Tool
Body, the frequency of the energy converter be selected from 20,25,28,33,40,60,80 and 100kHz it is any two or more (into
One step is preferably using above 3 kinds or 3 kinds of frequencies above).
Further, the frequency of multiple energy converters is selected from two kinds of different frequencies of the frequency range of 20-40kHz, 50-100kHz
Rate.
Further, the frequency of multiple energy converters is selected from the frequency range of 20-40kHz, 30-60kHz, 50-100kHz
Three kinds of different frequencies.More preferably it is selected from three kinds of different frequencies of 20-30kHz, 30-50kHz, 60-100kHz.
It, can (container can be to burn by the container equipped with the making herbs into wool pretreatment fluid in another embodiment of the present invention
Cup) it is placed in rinse bath, the bottom array of the rinse bath is installed with two or more transducings with different frequency
The energy converter of device, the different frequency is respectively driven by multiple supersonic generators.
Preferably, before the Buddha's warrior attendant wire cutting polysilicon chip is placed in the making herbs into wool pretreatment fluid, it is carried out
Cleaning, can specifically use concentration to be cleaned for dilute HF solution of 5-20%, remove the greasy dirt and oxide layer of silicon chip surface.
In the making herbs into wool preprocess method for the Buddha's warrior attendant wire cutting polysilicon chip that first aspect present invention provides, using containing carbonization
Silicon, water making herbs into wool pretreatment fluid make medium, the polysilicon chip of Buddha's warrior attendant wire cutting is pre-processed under ultrasonic wave effect, can be
Polysilicon chip surface forms uniform, coarse, the biggish damaging layer of area, and the polysilicon that the thickness of damaging layer can be cut with mortar
Piece compares favourably, and so as to carry out making herbs into wool processing to it using existing conventional process for etching, it is uniform that whole face corrosion can be obtained
Flannelette.The preprocess method is simple to operation, shorter to the processing time of Buddha's warrior attendant wire cutting polysilicon chip, is suitable in industry
Upper large-scale application.
Second aspect, the present invention provides a kind of making herbs into wool to pre-process silicon wafer, and the making herbs into wool pretreatment silicon wafer is using this hair
Making herbs into wool preprocess method described in bright first aspect is made.
The making herbs into wool pre-processes silicon wafer, has uniform, coarse surface damage layer, and loss layer is with a thickness of 8-12 μm, also
Densely covered stria caused by Buddha's warrior attendant wire cutting can be made to be planarized, existing process for etching (preferably mixed acid can be directlyed adopt to it
System) it is handled, it obtains corroding uniform flannelette with whole face.
The third aspect, the present invention provides a kind of etching method of Buddha's warrior attendant wire cutting polysilicon chip, the etching method, packets
Making herbs into wool preprocess method described in first aspect present invention is included, further comprises routine after the making herbs into wool preprocess method
Making herbs into wool.
Specifically, comprising the following steps:
(1) making herbs into wool pretreatment fluid is prepared:
Silicon carbide powder is dispersed in water, making herbs into wool pretreatment fluid is obtained, wherein silicon carbide is in the making herbs into wool pretreatment fluid
In mass fraction be 2-10%；
(2) it pre-processes:
Buddha's warrior attendant wire cutting polysilicon chip is placed in the container equipped with the making herbs into wool pretreatment fluid, in Ultrasonic Conditions
Under, ultrasonic treatment 2-5min is carried out, making herbs into wool pretreatment polysilicon chip is obtained；Wherein, the supersonic frequency when ultrasonic treatment is
20-100kHz, ultrasonic power 1500-3000W；
(3) making herbs into wool:
Making herbs into wool pretreatment polysilicon chip is subjected to conventional making herbs into wool, washed, dry after obtain Buddha's warrior attendant wire cutting polycrystalline
Silicon wafer wool making product, that is, the Buddha's warrior attendant wire cutting polysilicon chip of making herbs into wool.
Preferably, to polysilicon chip, it is preferred to use sour process for etching carries out.
Specifically, the conventional acid making herbs into wool is carried out using the mixed solution of nitric acid, hydrofluoric acid and water.
As described in the present invention, the acid formula of the conventional process for etching are as follows: the volume ratio 5- of nitric acid, hydrofluoric acid and water
15:1-5:5-10, making herbs into wool temperature are 5-10 DEG C, time 90-150s, the chemical equation of silicon wafer acid process for etching are as follows:
4HNO3+ 3Si=SiO2+4NO2+2H2O；SiO2+ HF=H2SiF6+2H2O；
H2SiF6With water is dissolved in, worm channel shape flannelette is formed in silicon chip surface；Again at room temperature, with the KOH of mass concentration 5%
Solution handles 25-40s, removes the porous silicon of silicon chip surface, rinses out lye remained on surface using deionized water；Finally use
The mixed solution of HF and HCl handles polysilicon chip 50-90s, and wherein the volume ratio of hydrofluoric acid, hydrochloric acid and water is 3:5:12, removes
Various impurity metal ions of silicon chip surface etc., and with deionized water flush acid surface.It should be noted that conventional acid making herbs into wool
Technique, however it is not limited to technological parameter enumerated above.
As described herein, unless otherwise specified, above-mentioned chemicals refers both to street drug, their mass fraction difference
Are as follows: hydrofluoric acid 49%, nitric acid are about 69%, hydrochloric acid 37%.
The etching method for the Buddha's warrior attendant wire cutting polysilicon chip that third aspect present invention provides, it is easy to operate, it is practical,
The etching method and existing battery manufacturing process have good compatibility.
Fourth aspect, the present invention provides a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing product, the Buddha's warrior attendant wire cutting is more
Crystal silicon chip making herbs into wool product is made using etching method described in third aspect present invention.
The flannelette of the Buddha's warrior attendant wire cutting polycrystalline silicon texturing product is uniform, and reflectivity is low, can be according to conventional batteries processing procedure
Process (including expand phosphorus-trimming-depositing antireflection film etc.), by the silicon wafer wool making production at photovoltaic cell, make diamond wire
The battery efficiency of the polysilicon chip of cutting is unaffected, to push the application of silicon wafer cut by diamond wire technology.
Advantages of the present invention will be illustrated partially in the following description, and a part is apparent according to specification
, or can implementation through the embodiment of the present invention and know.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is surface scan Electronic Speculum (SEM) figure of the polysilicon chip of mortar cutting；
Fig. 2 is the SEM figure of the polysilicon chip of Buddha's warrior attendant wire cutting；
Fig. 3 be Buddha's warrior attendant wire cutting polysilicon chip after the method for the present invention pre-processes (that is, in embodiment 1 making herbs into wool pre-process
Polysilicon chip) SEM figure；
Fig. 4 is (the i.e. embodiment 1 after the pretreated Buddha's warrior attendant wire cutting polysilicon chip of the method for the present invention again frequent regulation suede
Middle Buddha's warrior attendant wire cutting polycrystalline silicon texturing product) flannelette SEM figure.
Specific embodiment
Technical solution of the present invention will be clearly and completely described below.Obviously, described embodiment is only
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
Embodiment 1
A kind of making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip, includes the following steps:
(1) making herbs into wool pretreatment fluid is prepared:
1000 mesh, the silicon carbide powder that circularity is 0.9 are dispersed in water, obtain making herbs into wool pretreatment fluid, wherein silicon carbide
Mass fraction in the making herbs into wool pretreatment fluid is 10%；
(2) it pre-processes:
Buddha's warrior attendant wire cutting polysilicon chip is placed in the container equipped with above-mentioned making herbs into wool pretreatment fluid, wherein the making herbs into wool
The liquid level of pretreatment fluid in a reservoir is 3cm；The container bottom is equipped with the energy converter that frequency is 25kHZ, and the energy converter is by one
Supersonic generator drives, and generates the ultrasonic wave that frequency is 25kHZ；
Ultrasonic treatment 3min is carried out in the case where frequency is 25kHZ, ultrasonic power is 2000W, obtains making herbs into wool pretreatment polysilicon
Piece.
In the embodiment of the present invention, the circularity of silicon carbide is the Sysmex FPIA-3000 Dynamic Granulation using Malvern company
Particle shape analyzer is tested to obtain, which can quickly analyze granularity and grain using sheath stream and high speed image analytical technology
Shape.
Fig. 3 is the SEM figure that the making herbs into wool that the embodiment of the present invention 1 obtains pre-processes polysilicon chip.It compares and sees with Fig. 1,2, send out
The rigid wire cutting polysilicon chip of cash is after being ultrasonically treated using making herbs into wool pretreatment fluid provided by the invention, obtained making herbs into wool
Very big change occurs for the surface topography for pre-processing polysilicon chip, and gather smooth cutting stria, surface damage layer of script surface is shallower,
And polysilicon chip surface (such as Fig. 2) of the damage based on the damage of part small deep hole becomes coarse, uniform surface and (or is
" damaging layer "), and surface, without apparent stria, surface damage is more uniform, thickness is about 10-11 μm, is cut similar to mortar in Fig. 1
The silicon chip surface cut.
Application Example 1
What embodiment 1 obtained can be using routine with coarse, uniform outer surface the making herbs into wool pretreatment polysilicon chip
Sour process for etching carries out making herbs into wool processing, and the Buddha's warrior attendant wire cutting for obtaining that there is whole face to corrode uniform flannelette (as shown in Figure 4) is more
Crystal silicon chip making herbs into wool product, the specific steps are as follows:
Prepare making herbs into wool mixed acid solution, specific formula are as follows: nitric acid, hydrofluoric acid, water volume ratio 9:3:7；
The making herbs into wool pretreatment polysilicon chip that embodiment 1 obtains is placed in above-mentioned mixed acid solution and carries out making herbs into wool,
Middle making herbs into wool temperature is 8 DEG C, time 90-150s；30s is handled with the KOH solution room temperature of mass concentration 5% again, removes silicon wafer table
Hole silicon is received in face, finally use hydrofluoric acid and hydrochloric acid mixed solution (volume ratio of hydrofluoric acid, hydrochloric acid and water for 3:5:12) at
Manage 60s, remove the various impurity metal ions of silicon chip surface, washed, dry after obtain the Buddha's warrior attendant wire cutting polycrystalline after making herbs into wool
Silicon wafer, i.e. Buddha's warrior attendant wire cutting polycrystalline silicon texturing product.
Comparative example 1
In order to protrude the effect of process for etching of the invention, as a comparison, Buddha's warrior attendant wire cutting polysilicon chip is taken to directly adopt
Above-mentioned routine process for etching is handled (with the conventional making herbs into wool step in Application Example 1), the polysilicon chip after obtaining making herbs into wool.
It compares after tested, finds 1 gained Buddha's warrior attendant wire cutting polycrystalline silicon texturing product of Application Example in 400nm-
Average reflectance under 1000nm wave band is 24%, and the reflectivity of silicon wafer is 29% after 1 making herbs into wool of comparative example, this explanation is adopted
Carry out conventional making herbs into wool again after carrying out pretreatment of the invention through silicon wafer cut by diamond wire, can significantly silicon wafer sunken light make
With.
By the polysilicon chip after making herbs into wool in Application Example 1, comparative example 1 respectively according to conventional batteries processing procedure process
(including expand phosphorus-trimming-depositing antireflection film etc.), it is fabricated to photovoltaic cell, the battery performance of the two is measured, as a result see the table below 1.
Battery performance comparison made from 1 Application Example of table, 1 gained silicon wafer (experiment slice) and 1 silicon wafer of comparative example (comparison piece)
| Project | Isc | Uoc | Rse | Rsh | IRev1 | FF | IRev2 |
| Compare piece | 8.7522 | 0.6369 | 0.0024 | 805.0246 | 0.0359 | 78.6830 | 0.0492 |
| Experiment slice | 9.0352 | 0.6283 | 0.0017 | 243.7115 | 0.1391 | 79.0915 | 0.1747 |
In table 1, Isc represents short circuit current；Uoc represents open-circuit voltage；Rse represents series resistance；Rsh represents electricity in parallel
Resistance；IRev1 represents reverse current 1 (- 10V)；FF represents fill factor；IRev2 represents reverse current 2 (- 12V).
This illustrate Buddha's warrior attendant wire cutting polysilicon chip after pretreated method provided by the invention is handled, Ke Yizhi
It connects and is used for polysilicon normally sour making herbs into wool battery process, also solve Buddha's warrior attendant wire cutting polysilicon chip and directly use polycrystalline silicic acid making herbs into wool
The phenomenon that electrical property declines when battery process.
Embodiment 2
A kind of making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip, includes the following steps:
(1) making herbs into wool pretreatment fluid is prepared:
800 mesh, the silicon carbide powder that circularity is 0.88 are dispersed in water, obtain making herbs into wool pretreatment fluid, wherein silicon carbide
Mass fraction in the making herbs into wool pretreatment fluid is 5%；
(2) it pre-processes:
Buddha's warrior attendant wire cutting polysilicon chip is placed in the container equipped with above-mentioned making herbs into wool pretreatment fluid, wherein the making herbs into wool
The liquid level of pretreatment fluid in a reservoir is 5cm；The container bottom is equipped with the energy converter that frequency is 28kHZ, and the energy converter is by one
Supersonic generator (frequency 28kHZ) drives, and generates ultrasonic wave；
Ultrasonic treatment 5min is carried out in the case where frequency is 28kHZ, ultrasonic power is 1800W, obtains making herbs into wool pretreatment polysilicon
Piece.
Embodiment 3
A kind of making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip, includes the following steps:
(1) making herbs into wool pretreatment fluid is prepared:
2000 mesh, the silicon carbide powder that circularity is 0.92 and surface active agent tween 80 are dispersed in water, made
Suede pretreatment fluid, wherein mass fraction of the silicon carbide in the making herbs into wool pretreatment fluid is 3%, and Tween 80 is pre-processed in making herbs into wool
Mass fraction in liquid is 2%；
(2) it pre-processes:
Buddha's warrior attendant wire cutting polysilicon chip is placed in the container equipped with above-mentioned making herbs into wool pretreatment fluid, wherein the making herbs into wool
The liquid level of pretreatment fluid in a reservoir is 2cm；The container bottom is equipped with the energy converter that frequency is 50kHZ, and the energy converter is by one
Supersonic generator drives, and generates the ultrasonic wave that frequency is 50kHZ；
Ultrasonic treatment 2min is carried out in the case where frequency is 50kHZ, ultrasonic power is 3000W, obtains making herbs into wool pretreatment polysilicon
Piece.
Embodiment 4
A kind of making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip, includes the following steps:
(1) making herbs into wool pretreatment fluid is prepared:
1250 mesh, the silicon carbide powder that circularity is 0.89 are dispersed in water, obtain making herbs into wool pretreatment fluid, wherein carbonization
Mass fraction of the silicon in the making herbs into wool pretreatment fluid is 10%；
(2) it pre-processes:
Buddha's warrior attendant wire cutting polysilicon chip is placed in the container equipped with above-mentioned making herbs into wool pretreatment fluid, wherein the making herbs into wool
The liquid level of pretreatment fluid in a reservoir is 3cm；There are three the energy converters with different frequency for container bottom array installation, each
The energy converter of different frequency is corresponded to driving by a supersonic generator respectively, and each energy converter generates a kind of ultrasound of frequency
Wave, the frequency of 3 energy converters are respectively 25kHz, 40kHz, 90kHz；
The Buddha's warrior attendant wire cutting polysilicon chip being immersed in the making herbs into wool pretreatment fluid frequency be respectively 25kHz, 40kHz,
90kHz, ultrasonic power are carried out ultrasonic treatment 3min under conditions of being 2000W, obtain making herbs into wool pretreatment polysilicon chip.
After the pretreatment polysilicon chip of making herbs into wool made from the present embodiment is carried out conventional acid making herbs into wool, and to the anti-of gained silicon wafer
The rate of penetrating is determined, and the average reflectance under 400nm-1000nm wave band is 23%.Diamond wire after above-mentioned making herbs into wool is cut
Battery is made in the polysilicon chip cut, and the efficiency for measuring the battery is 17.95%.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip, which comprises the following steps:
(1) silicon carbide powder is dispersed in water, obtains making herbs into wool pretreatment fluid, wherein silicon carbide is in the making herbs into wool pretreatment fluid
In mass fraction be 2-10%, the circularity of the silicon carbide is 0.85-0.95；
(2) Buddha's warrior attendant wire cutting polysilicon chip is placed in the container equipped with the making herbs into wool pretreatment fluid, under ultrasonic conditions,
Ultrasonic treatment 2-5min is carried out, making herbs into wool pretreatment polysilicon chip is obtained, there is the surface of the even roughness with a thickness of 8-12 μm
Damaging layer；Wherein, the supersonic frequency when ultrasonic treatment is 20-100kHz, ultrasonic power 1500-3000W.
2. making herbs into wool preprocess method as described in claim 1, which is characterized in that the liquid of the making herbs into wool pretreatment fluid in a reservoir
Position is 2-5cm.
3. making herbs into wool preprocess method as described in claim 1, which is characterized in that the temperature control when ultrasonic treatment exists
25-60℃。
4. making herbs into wool preprocess method as described in claim 1, which is characterized in that the mesh number of the silicon carbide powder is in 400 mesh
More than.
5. making herbs into wool preprocess method as described in claim 1, which is characterized in that when carrying out the ultrasonic treatment, adopt simultaneously
Carried out with the ultrasonic wave of two or more different frequencies, wherein the frequency of the ultrasonic wave in 20-100kHz any two
Kind or more.
6. making herbs into wool preprocess method as claimed in claim 5, which is characterized in that the frequency of the ultrasonic wave is respectively selected from 20-
Three kinds of different frequencies of 40kHz, 30-60kHz, 50-100kHz frequency range.
7. making herbs into wool preprocess method as claimed in any one of claims 1 to 6, which is characterized in that in the making herbs into wool pretreatment fluid also
Containing surfactant, the HLB value of the surfactant is 10-20；35-72 dynes of the surface tension of the pretreatment fluid/
Centimetre.
8. a kind of making herbs into wool pre-processes silicon wafer, which is characterized in that the making herbs into wool pretreatment silicon wafer is by any one of claim 1-7 institute
The making herbs into wool preprocess method stated is made.
9. a kind of etching method of Buddha's warrior attendant wire cutting polysilicon chip, which comprises the following steps:
(1) silicon carbide powder is dispersed in water, obtains making herbs into wool pretreatment fluid, wherein silicon carbide is in the making herbs into wool pretreatment fluid
In mass fraction be 2-10%, the circularity of the silicon carbide is 0.85-0.95；
(2) Buddha's warrior attendant wire cutting polysilicon chip is placed in the container equipped with the making herbs into wool pretreatment fluid, under ultrasonic conditions,
Ultrasonic treatment 2-5min is carried out, making herbs into wool pretreatment polysilicon chip is obtained, there is the surface of the even roughness with a thickness of 8-12 μm
Damaging layer；Wherein, the supersonic frequency when ultrasonic treatment is 20-100kHz, ultrasonic power 1500-3000W；
(3) making herbs into wool pretreatment polysilicon chip is subjected to conventional making herbs into wool, washed, dry after obtain Buddha's warrior attendant wire cutting polysilicon
Piece making herbs into wool product.
10. a kind of using Buddha's warrior attendant wire cutting polycrystalline silicon texturing product made from etching method as claimed in claim 9.
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Citations (4)
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|---|---|---|---|---|
| CN102698983A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Cleaning method for solar energy level silicon slice |
| CN103618026A (en) * | 2013-11-11 | 2014-03-05 | 杭州电子科技大学 | Micro-nanometer machining device and method of meshed polycrystalline silicon |
| CN104505437A (en) * | 2014-12-30 | 2015-04-08 | 江西赛维Ldk太阳能高科技有限公司 | Texturing preprocessing solution and method of diamond wire cutting polycrystalline silicon wafer, texturing preprocessing silicon wafer and application of texturing preprocessing silicon wafer |
| CN105932078A (en) * | 2016-01-15 | 2016-09-07 | 北京创世捷能机器人有限公司 | Texturing method of polycrystalline silicon wafer cut by diamond wire |
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| JPH03109291A (en) * | 1989-09-20 | 1991-05-09 | Sumitomo Electric Ind Ltd | Formation of texture |
| JP2014049556A (en) * | 2012-08-30 | 2014-03-17 | Mitsubishi Electric Corp | Manufacturing method of solar cell substrate, solar cell substrate, and solar cell substrate manufacturing device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102698983A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Cleaning method for solar energy level silicon slice |
| CN103618026A (en) * | 2013-11-11 | 2014-03-05 | 杭州电子科技大学 | Micro-nanometer machining device and method of meshed polycrystalline silicon |
| CN104505437A (en) * | 2014-12-30 | 2015-04-08 | 江西赛维Ldk太阳能高科技有限公司 | Texturing preprocessing solution and method of diamond wire cutting polycrystalline silicon wafer, texturing preprocessing silicon wafer and application of texturing preprocessing silicon wafer |
| CN105932078A (en) * | 2016-01-15 | 2016-09-07 | 北京创世捷能机器人有限公司 | Texturing method of polycrystalline silicon wafer cut by diamond wire |
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