CN107145036A - A kind of Thin Film Transistor-LCD photosensitive resin - Google Patents
A kind of Thin Film Transistor-LCD photosensitive resin Download PDFInfo
- Publication number
- CN107145036A CN107145036A CN201710354593.5A CN201710354593A CN107145036A CN 107145036 A CN107145036 A CN 107145036A CN 201710354593 A CN201710354593 A CN 201710354593A CN 107145036 A CN107145036 A CN 107145036A
- Authority
- CN
- China
- Prior art keywords
- parts
- photosensitive resin
- thin film
- film transistor
- ether
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
Abstract
The invention discloses a kind of Thin Film Transistor-LCD photosensitive resin, it is made up of the raw material of following parts by weight：20 30 parts of epoxy acrylic copolymer resins, 22 25 parts of alkali-soluble polymer, catalyst n, 36 parts of N dimethylethanolamines, 9 14 parts of Photoepolymerizationinitiater initiater, 48 parts of water-dispersed latices, 9 12 parts of 38 46 parts of 4 10 parts of inorganic additive, solvent, aggretion type silane coupler and 68 parts of defoamer through organosilan surfaction.The present invention is using aggretion type silane coupler as one of component of Photosensitve resin composition, and aggretion type silane coupler is the silane coupler containing many vinyl-functionals so that higher closer to bottom extent of polymerization after Photosensitve resin composition coating exposure；Photoepolymerizationinitiater initiater can make have high-quality imaging using the LCDs that the resin makes；In addition not only technological process is simple controllable, with short production cycle for the preparation method of the photosensitive resin.
Description
Technical field
The present invention relates to LCD Technology field, and in particular to a kind of Thin Film Transistor-LCD is with photosensitive tree
Fat.
Background technology
Thin Film Transistor-LCD (TFT-LCD) is configured to the glass substrate with tft array with being filtered with colored
The glass substrate of mating plate is with preset space length lamination, and liquid crystal is infused between above-mentioned two glass substrate, so that panel is formed, to the face
Plate applies electric signal, to provide display.
Transflective LCD is in the form of reflective LCD and transmission type LCD combination, using external light source and interior lights
Both sources.Because transflective LCD is provided with both reflecting plate and back light unit, on the one hand using by baffle reflection
Exterior light, on the other hand use from back light unit launch interior lights.
In the case where LCD brightness ratio periphery illumination is not high, display performance may be reduced due to the difference of contrast.
In order to solve the problem, exist using transflective LCD come partly using the method and raising transmission type LCD itself of exterior light
The method of brightness.Because brightness can be improved using exterior light under a bright ambient environment, transflective LCD has excellent
Gesture, but transflective LCD problems are, the reflector element worked in this reflection mode constitutes whole open region (opening
Area) 50%, and efficiency is very low in reflective mode, to the degree for being less than 5%, undesirably drops in dark conditions
Low-light level.
Liquid crystal display panel includes two panels glass substrate：Wrapped on Array substrates and colored filter, wherein Array substrates
TFT devices and peripheral circuit are included, colored filter includes R, G, B color layers, then by two plate bases to box.Due to depositing when to box
In deviation, it is necessary to increase the setting line width of black matrix to avoid causing box deviation light leak, and the BM increased design line width is just
Naturally aperture opening ratio is reduced, display effect is influenceed.Chromatic filter layer is made on the Array substrates that TFT element manufacturings are completed, is kept away
Exempt from error during to box, therefore BM can be designed as narrow linewidth, improve aperture opening ratio.However, currently used as chromatic photoresist
The Photosensitve resin composition of agent is coated, exposure, after development, it is impossible to form the via at flat grade angle, and makes ITO in via
Side attachment is bad.
Accordingly, it would be desirable to develop the formation of promotion pattern and the Photosensitve resin composition good with ITO tacks.
The content of the invention
The present invention is intended to provide a kind of Thin Film Transistor-LCD photosensitive resin.
The present invention provides following technical scheme：
A kind of Thin Film Transistor-LCD photosensitive resin, it is made up of the raw material of following parts by weight：Epoxy
20-30 parts of acrylic copolymeric resin, 22-25 parts of alkali-soluble polymer, catalyst n, 3-6 parts of N- dimethylethanolamines, light gather
Close 9-14 parts of initiator, 4-8 parts of water-dispersed latices, 4-10 parts of inorganic additive, solvent 38- through organosilan surfaction
6-8 parts of 46 parts, 9-12 parts of aggretion type silane coupler and defoamer.
The alkali-soluble polymer is the polymer of methacrylic acid and methacrylate.
The alkali-soluble polymer acid number is about 152-174KOH/g, and weight average molecular weight is 8000-40000g/mol.
The Photoepolymerizationinitiater initiater be alkyl phenones type, acetophenone type, styrax ether type, Benzophenone type, thioxanthone type,
One or both of anthraquinone type and benzylic type are combined.
The aggretion type silane coupler is γ-(2,3- glycidoxies) propyl trimethoxy silicane and bipentaerythrite
The condensation product of five acrylate.
The defoamer is selected from least one of methyl polysiloxane and dimethyl diphenyl polysiloxanes.
The solvent is selected from formic acid, acetic acid, chloroform, acetone, butanone, fatty alcohol, glycol monoethyl ether, ethylene glycol list second
Ether, ethylene glycol ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether ethyl acetate, MEK, methyl iso-butyl ketone (MIBK), Dan Jia
Base ether glycol ester, gamma-butyrolacton, propionic acid -3- ether ethyl ester, butyl carbitol, butyl carbitol acetate, propane diols list
Combination more than one or both of methyl ether, propylene glycol monomethyl ether acetate, hexamethylene, dimethylbenzene, isopropanol.
The epoxy acrylic copolymer resins is copolymerized after the mixing of unsaturated carboxylic acid, comonomer and organic solvent
Reaction, then be evaporated off with the method for vacuum distillation after solvent；The unsaturated carboxylic acid is selected from acrylic acid, methacrylate, methene
At least one of succinic acid, maleic acid and fumaric acid.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention is by using aggretion type silane coupler conduct
One of component of Photosensitve resin composition, aggretion type silane coupler is the silane coupler containing many vinyl-functionals so that
It is higher closer to bottom extent of polymerization after Photosensitve resin composition coating exposure；It can make to use the tree by Photoepolymerizationinitiater initiater
The LCDs that fat makes has high-quality imaging；In addition the preparation method of the photosensitive resin not only simply may be used by technological process
Control, with short production cycle, and in resin synthesis process, the heat for making full use of chemical reaction to produce saves the energy and without three
It is useless to produce.
Embodiment
Below in conjunction with the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described,
Obviously, described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, all
Belong to the scope of protection of the invention.
A kind of Thin Film Transistor-LCD photosensitive resin of embodiment 1, it is the raw material group by following parts by weight
Into：20 parts of epoxy acrylic copolymer resins, 22 parts of alkali-soluble polymer, catalyst n, 3 parts of N- dimethylethanolamines, photopolymerization
9 parts of initiator, 4 parts of water-dispersed latices, 38 parts of 4 parts of inorganic additive, solvent, aggretion type silicon through organosilan surfaction
6 parts of 9 parts of alkane coupling agent and defoamer.
The alkali-soluble polymer is the polymer of methacrylic acid and methacrylate.
The alkali-soluble polymer acid number is about 152-174KOH/g, and weight average molecular weight is 8000-40000g/mol.
The Photoepolymerizationinitiater initiater be alkyl phenones type, acetophenone type, styrax ether type, Benzophenone type, thioxanthone type,
One or both of anthraquinone type and benzylic type are combined.
The aggretion type silane coupler is γ-(2,3- glycidoxies) propyl trimethoxy silicane and bipentaerythrite
The condensation product of five acrylate.
The defoamer is selected from least one of methyl polysiloxane and dimethyl diphenyl polysiloxanes.
The solvent is selected from formic acid, acetic acid, chloroform, acetone, butanone, fatty alcohol, glycol monoethyl ether, ethylene glycol list second
Ether, ethylene glycol ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether ethyl acetate, MEK, methyl iso-butyl ketone (MIBK), Dan Jia
Base ether glycol ester, gamma-butyrolacton, propionic acid -3- ether ethyl ester, butyl carbitol, butyl carbitol acetate, propane diols list
Combination more than one or both of methyl ether, propylene glycol monomethyl ether acetate, hexamethylene, dimethylbenzene, isopropanol.
The epoxy acrylic copolymer resins is copolymerized after the mixing of unsaturated carboxylic acid, comonomer and organic solvent
Reaction, then be evaporated off with the method for vacuum distillation after solvent；The unsaturated carboxylic acid is selected from acrylic acid, methacrylate, methene
At least one of succinic acid, maleic acid and fumaric acid.
A kind of Thin Film Transistor-LCD photosensitive resin of embodiment 2, it is the raw material group by following parts by weight
Into：30 parts of epoxy acrylic copolymer resins, 25 parts of alkali-soluble polymer, catalyst n, 6 parts of N- dimethylethanolamines, photopolymerization
14 parts of initiator, 8 parts of water-dispersed latices, 46 parts of 10 parts of inorganic additive, solvent through organosilan surfaction, aggretion type
8 parts of 12 parts of silane coupler and defoamer.
The alkali-soluble polymer is the polymer of methacrylic acid and methacrylate.
The alkali-soluble polymer acid number is about 152-174KOH/g, and weight average molecular weight is 8000-40000g/mol.
The Photoepolymerizationinitiater initiater be alkyl phenones type, acetophenone type, styrax ether type, Benzophenone type, thioxanthone type,
One or both of anthraquinone type and benzylic type are combined.
The aggretion type silane coupler is γ-(2,3- glycidoxies) propyl trimethoxy silicane and bipentaerythrite
The condensation product of five acrylate.
The defoamer is selected from least one of methyl polysiloxane and dimethyl diphenyl polysiloxanes.
The solvent is selected from formic acid, acetic acid, chloroform, acetone, butanone, fatty alcohol, glycol monoethyl ether, ethylene glycol list second
Ether, ethylene glycol ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether ethyl acetate, MEK, methyl iso-butyl ketone (MIBK), Dan Jia
Base ether glycol ester, gamma-butyrolacton, propionic acid -3- ether ethyl ester, butyl carbitol, butyl carbitol acetate, propane diols list
Combination more than one or both of methyl ether, propylene glycol monomethyl ether acetate, hexamethylene, dimethylbenzene, isopropanol.
The epoxy acrylic copolymer resins is copolymerized after the mixing of unsaturated carboxylic acid, comonomer and organic solvent
Reaction, then be evaporated off with the method for vacuum distillation after solvent；The unsaturated carboxylic acid is selected from acrylic acid, methacrylate, methene
At least one of succinic acid, maleic acid and fumaric acid.
A kind of Thin Film Transistor-LCD photosensitive resin of embodiment 3, it is the raw material group by following parts by weight
Into：26 parts of epoxy acrylic copolymer resins, 23 parts of alkali-soluble polymer, catalyst n, 5 parts of N- dimethylethanolamines, photopolymerization
12 parts of initiator, 6 parts of water-dispersed latices, 42 parts of 8 parts of inorganic additive, solvent through organosilan surfaction, aggretion type
7 parts of 11 parts of silane coupler and defoamer.
The alkali-soluble polymer is the polymer of methacrylic acid and methacrylate.
The alkali-soluble polymer acid number is about 152-174KOH/g, and weight average molecular weight is 8000-40000g/mol.
The Photoepolymerizationinitiater initiater be alkyl phenones type, acetophenone type, styrax ether type, Benzophenone type, thioxanthone type,
One or both of anthraquinone type and benzylic type are combined.
The aggretion type silane coupler is γ-(2,3- glycidoxies) propyl trimethoxy silicane and bipentaerythrite
The condensation product of five acrylate.
The defoamer is selected from least one of methyl polysiloxane and dimethyl diphenyl polysiloxanes.
The solvent is selected from formic acid, acetic acid, chloroform, acetone, butanone, fatty alcohol, glycol monoethyl ether, ethylene glycol list second
Ether, ethylene glycol ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether ethyl acetate, MEK, methyl iso-butyl ketone (MIBK), Dan Jia
Base ether glycol ester, gamma-butyrolacton, propionic acid -3- ether ethyl ester, butyl carbitol, butyl carbitol acetate, propane diols list
Combination more than one or both of methyl ether, propylene glycol monomethyl ether acetate, hexamethylene, dimethylbenzene, isopropanol.
The epoxy acrylic copolymer resins is copolymerized after the mixing of unsaturated carboxylic acid, comonomer and organic solvent
Reaction, then be evaporated off with the method for vacuum distillation after solvent；The unsaturated carboxylic acid is selected from acrylic acid, methacrylate, methene
At least one of succinic acid, maleic acid and fumaric acid.
It is obvious to a person skilled in the art that the invention is not restricted to the details of the one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit is required rather than the explanation is limited, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Although not each moreover, it will be appreciated that the present specification is described in terms of embodiments
Embodiment is only comprising an independent technical scheme, and this narrating mode of specification is only this area for clarity
Technical staff should be using specification as an entirety, and the technical solutions in the various embodiments may also be suitably combined, forms this
Art personnel may be appreciated other embodiment.
Claims (8)
1. a kind of Thin Film Transistor-LCD photosensitive resin, it is characterised in that it is by the raw material of following parts by weight
Composition：20-30 parts of epoxy acrylic copolymer resins, 22-25 parts of alkali-soluble polymer, catalyst n, N- dimethylethanolamines 3-
6 parts, 9-14 parts of Photoepolymerizationinitiater initiater, 4-8 parts of water-dispersed latices, the inorganic additive 4-10 through organosilan surfaction
Part, 38-46 parts of solvent, 9-12 parts of aggretion type silane coupler and 6-8 parts of defoamer.
2. a kind of Thin Film Transistor-LCD photosensitive resin according to claim 1, it is characterised in that：The alkali
Soluble polymer is the polymer of methacrylic acid and methacrylate.
3. a kind of Thin Film Transistor-LCD photosensitive resin according to claim 1, it is characterised in that：The alkali
Soluble polymer acid number is about 152-174KOH/g, and weight average molecular weight is 8000-40000g/mol.
4. a kind of Thin Film Transistor-LCD photosensitive resin according to claim 1, it is characterised in that：The light
Polymerization initiator is alkyl phenones type, acetophenone type, styrax ether type, Benzophenone type, thioxanthone type, anthraquinone type and benzylic type
One or both of combination.
5. a kind of Thin Film Transistor-LCD photosensitive resin according to claim 1, it is characterised in that：It is described poly-
Mould assembly silane coupler is the contracting of γ-(2,3- glycidoxies) propyl trimethoxy silicane and double pentaerythritol C5 methacrylate
Compound.
6. a kind of Thin Film Transistor-LCD photosensitive resin according to claim 1, it is characterised in that：It is described to disappear
Infusion is selected from least one of methyl polysiloxane and dimethyl diphenyl polysiloxanes.
7. a kind of Thin Film Transistor-LCD photosensitive resin according to claim 1, it is characterised in that：It is described molten
Agent be selected from formic acid, acetic acid, chloroform, acetone, butanone, fatty alcohol, glycol monoethyl ether, ethylene glycol monoethyl ether, ethylene glycol ether,
Ethylene glycol monobutyl ether, diethylene glycol diethyl ether ethyl acetate, MEK, methyl iso-butyl ketone (MIBK), monomethyl ether glycol ester, γ-
Butyrolactone, propionic acid -3- ether ethyl ester, butyl carbitol, butyl carbitol acetate, propylene glycol monomethyl ether, propane diols list
Combination more than one or both of ether acetate, hexamethylene, dimethylbenzene, isopropanol.
8. a kind of Thin Film Transistor-LCD photosensitive resin according to claim 1, it is characterised in that：The ring
Oxypropylene acid copolymer resins be by unsaturated carboxylic acid, comonomer and organic solvent mixing after be copolymerized, then with depressurize
The method of distillation is evaporated off obtaining after solvent；The unsaturated carboxylic acid is selected from acrylic acid, methacrylate, methylene succinic acid, maleic
At least one of diacid and fumaric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710354593.5A CN107145036A (en) | 2017-05-19 | 2017-05-19 | A kind of Thin Film Transistor-LCD photosensitive resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710354593.5A CN107145036A (en) | 2017-05-19 | 2017-05-19 | A kind of Thin Film Transistor-LCD photosensitive resin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107145036A true CN107145036A (en) | 2017-09-08 |
Family
ID=59777480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710354593.5A Pending CN107145036A (en) | 2017-05-19 | 2017-05-19 | A kind of Thin Film Transistor-LCD photosensitive resin |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107145036A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102033429A (en) * | 2010-11-17 | 2011-04-27 | 绵阳艾萨斯电子材料有限公司 | Photosensitive resin for plasma display screen electrode |
| CN102778813A (en) * | 2012-07-31 | 2012-11-14 | 京东方科技集团股份有限公司 | Photosensitive resin composition |
| CN102792223A (en) * | 2010-03-25 | 2012-11-21 | 东海橡塑工业株式会社 | Photosensitive resin composition, printing plate precursor and flexographic printing plate |
| CN105676590A (en) * | 2016-04-12 | 2016-06-15 | 无锡南理工科技发展有限公司 | Photosensitive resin |
-
2017
- 2017-05-19 CN CN201710354593.5A patent/CN107145036A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102792223A (en) * | 2010-03-25 | 2012-11-21 | 东海橡塑工业株式会社 | Photosensitive resin composition, printing plate precursor and flexographic printing plate |
| CN102033429A (en) * | 2010-11-17 | 2011-04-27 | 绵阳艾萨斯电子材料有限公司 | Photosensitive resin for plasma display screen electrode |
| CN102778813A (en) * | 2012-07-31 | 2012-11-14 | 京东方科技集团股份有限公司 | Photosensitive resin composition |
| CN105676590A (en) * | 2016-04-12 | 2016-06-15 | 无锡南理工科技发展有限公司 | Photosensitive resin |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102116177B1 (en) | Photosensitive resin composition for light shielding film and cured product using the same | |
| CN102103327B (en) | Black matrix composition with high light-shielding and improved adhesion properties | |
| CN101196688B (en) | Photosensitive resin composition and spacer for liquid crystal panel | |
| CN1877449B (en) | Negative photosensitive resin composition | |
| TWI401272B (en) | A resin composition, a method for forming a protective film of a color filter, and a color filter protective film | |
| JP5724248B2 (en) | Colored resin composition for color filter, color filter, liquid crystal display device and organic EL display | |
| TWI659265B (en) | Black resin composition for light shielding film, substrate with light shielding film color filter and touch panel | |
| CN101200566B (en) | Photosensitive resin composition for forming organic insulating film and device using the same | |
| CN101508846B (en) | Organic-inorganic composite resin composition useful as protective film | |
| KR101759929B1 (en) | Photosensitive resin composition | |
| KR20070100042A (en) | Negative photosensitive resin composition | |
| JP4915500B2 (en) | Thermosetting resin composition, method for forming color filter protective film, and color filter protective film | |
| JPWO2009022644A1 (en) | Negative photosensitive resin composition, spacer and liquid crystal display device | |
| CN103869617A (en) | Active radiation hardenable resin composition, and spacer and/or color filter protective layer for display element using the same | |
| CN103869616A (en) | Active energy ray curable resin composition and spacer for display device using the same and/or color filter protective layer | |
| CN101571672A (en) | Negative light-sensitive resin combination | |
| CN103293753A (en) | Color liquid crystal display device | |
| CN102372826A (en) | Thermally curable resin composition for protective film | |
| KR101249997B1 (en) | Photosensitive resin composition for organic insulating film and organic insulating film made therefrom | |
| CN107145036A (en) | A kind of Thin Film Transistor-LCD photosensitive resin | |
| CN108255017B (en) | Negative photosensitive resin composition | |
| JP5246749B2 (en) | Thermosetting resin composition and cured product thereof | |
| CN105676590A (en) | Photosensitive resin | |
| KR20140100758A (en) | Thermosetting resin composition and color filter having a protective film formed by using the same | |
| CN106773534B (en) | Photosensitive resin composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170908 |
|
| RJ01 | Rejection of invention patent application after publication |