CN107144899A - Sulphur system optical element with capability of electromagnetic shielding and preparation method thereof - Google Patents
Sulphur system optical element with capability of electromagnetic shielding and preparation method thereof Download PDFInfo
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- CN107144899A CN107144899A CN201710517891.1A CN201710517891A CN107144899A CN 107144899 A CN107144899 A CN 107144899A CN 201710517891 A CN201710517891 A CN 201710517891A CN 107144899 A CN107144899 A CN 107144899A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/111—Anti-reflection coatings using layers comprising organic materials
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Abstract
The present invention is that this method comprises the following steps on a kind of sulphur system optical element with capability of electromagnetic shielding and preparation method thereof:(1) in sulphur system optical element substrate surface plating inorganic film；(2) in described inorganic film surface spraying organic coating；(3) the saturating infra-red electromagnetic screened film of graphene is transferred to the surface of described organic coating, the sulphur system optical element with capability of electromagnetic shielding is obtained.The sulphur system optical element with capability of electromagnetic shielding of the present invention is compared to the optical element using metallic mesh as shield, and its realizability is strong, and the preparation method of the present invention is simple, low manufacture cost.Sulphur system optical element of the present invention with capability of electromagnetic shielding is small in 1.06 12 μm of the service band absorption coefficient of light, and light transmittance is high, and effectiveness is strong；Its square resistance is less than 35 Ω/, and electromagnet shield effect is more than 15dB, and infrared transmission loss is less than 3%.
Description
Technical field
The present invention relates to a kind of sulphur system optical element, more particularly to a kind of sulphur system optics member with capability of electromagnetic shielding
Part and preparation method thereof.
Background technology
Chalcogenide glass is the infrared permeable material of a class function admirable, 1.06 μm, 3-5 μm, 8-12 μm three it is main red
Outer atmospheric window is respectively provided with higher transmitance and the extremely low hot coefficient of refractive index temperature.In recent years, with passively being set without thermalization
The popularization in infrared optical system is counted, chalcogenide glass window and optical element are in all kinds of infrared imagings, guidance, detection system
Show higher application value and wide application prospect.
In actual applications, particularly in the infrared optical system of all kinds of military issue weapons, to avoid bad electromagnetic environment
Interference to instrument and equipment, generally need to prepare electromagnetic shielding film in infrared window or optical element surface, it is being ensured work
On the premise of IR wavelengths wave height transmitance, there is certain shielding action to microwave region electromagnetic wave.Currently, can be in infrared window
Mouthful or optical element on prepare, and be respectively provided between 1.06-12 mu m wavebands the electromagnetic shielding film of Infrared light transmittance and only have
Metallic mesh one kind is etched, its operation principle is to utilize the metallic film mediation material " high IR transmission " with fenestral fabric
Contradiction between " high conductivity ".Metallic mesh infra-red electromagnetic screened film is at present in ZnS, sapphire, AlON and MgF2Deng many
Plant and practical application is obtained on infrared window and optics, but itself still has preparation technology complexity, process control difficulties
Greatly, poor mechanical property, thang-kng amount be low and the defect such as Moire fringe.Meanwhile, chalcogenide glass belongs to a kind of soft-brittle material in itself,
Its case hardness is low, and mechanical strength is relatively weak.Therefore, " high speed spin coating ", " laser straight in metallic mesh manufacturing process
Write etch mask ", the step such as " vacuum coating " and " organic solvent removes photoresist " very likely causes to the optical surface of chalcogenide glass
Damage, significantly increases chalcogenide glass window and optical element realizes the technical difficulty of electro-magnetic screen function.
The content of the invention
It is a primary object of the present invention to there is provided a kind of new sulphur system optical element and its system with capability of electromagnetic shielding
Preparation Method, technical problem to be solved is its 1.06-12 mu m waveband is had higher light transmittance and compared with strong electromagnetic shield effectiveness,
Thus more suitable for practicality.
The object of the invention to solve the technical problems is realized using following technical scheme.According to present invention proposition
A kind of sulphur system optical element with capability of electromagnetic shielding preparation method, it comprises the following steps:
(1) in sulphur system optical element surface plating inorganic film；
(2) in described inorganic film surface spraying organic coating；
(3) the saturating infra-red electromagnetic screened film of graphene is transferred to the surface of described organic coating, obtained with electromagnetic screen
Cover the sulphur system optical element of performance.
The object of the invention to solve the technical problems can be also applied to the following technical measures to achieve further.
It is preferred that, the preparation method of the foregoing sulphur system optical element with capability of electromagnetic shielding, wherein described is inorganic
The plated film mode of film layer is electron beam evaporation or radio-frequency magnetron sputter method；The plating steps of described inorganic film include：Plated film
When background vacuum be less than 8 × 10-4The surface of chalcogenide glass plating piece is heated to 50-100 DEG C simultaneously by Pa, plated film front opening drying lamp
20-30min is incubated, ion gun Ar is opened+The optical element surface cleaning of ion pair sulphur system, opens electron gun and is plated in chalcogenide glass
The material of inorganic film is deposited on the surface of part；The spraying process of described organic coating includes：By the material of organic coating
Material mix with curing agent, stir, vacuum row bubble, be then sprayed on inorganic film surface, wherein the material of organic coating and admittedly
The mass ratio of agent is volume 25-35：1.
It is preferred that, the preparation method of the foregoing sulphur system optical element with capability of electromagnetic shielding is sharp wherein in step (3)
The saturating infra-red electromagnetic screened film of graphene is transferred to the surface of described organic coating with wet-etching technology.
It is preferred that, the preparation method of the foregoing sulphur system optical element with capability of electromagnetic shielding, wherein described is inorganic
The material of film layer is SiO2、Al2O3Or HfO2；The material of described organic coating is polyimide resin or organic siliconresin；Institute
Low defect graphene film of the saturating infra-red electromagnetic screened film of graphene stated for preparation on copper foil.
It is preferred that, the preparation method of the foregoing sulphur system optical element with capability of electromagnetic shielding, wherein described is inorganic
The material of film layer is SiO2When, the thickness of inorganic film is 5-30nm；The material of described inorganic film is Al2O3When, inoranic membrane
The thickness of layer is 10-25nm；The material of described inorganic film is HfO2When, the thickness of inorganic film is 10-30nm；Described
When organic coating is polyimide resin, the thickness of organic coating is 6-12 μm；When described organic coating is organic siliconresin,
The thickness of organic coating is 8-12 μm.
It is preferred that, the preparation method of the foregoing sulphur system optical element with capability of electromagnetic shielding, wherein that shifts is described
The number of plies of the saturating infra-red electromagnetic screened film of graphene is 3-10 layers.
The object of the invention to solve the technical problems is also realized using following technical scheme.According to present invention proposition
The sulphur system optical element with capability of electromagnetic shielding, it includes：
Liu Xi optical elements basic unit；
Inorganic film, is attached in described basic unit；
Organic coating, is attached on described inorganic film；
The saturating infra-red electromagnetic screened film of graphene, is attached to described organic coating.
The object of the invention to solve the technical problems can be also applied to the following technical measures to achieve further.
It is preferred that, the foregoing sulphur system optical element with capability of electromagnetic shielding, wherein the material of described inorganic film
For SiO2、Al2O3Or HfO2；The material of described organic coating is polyimide resin or organic siliconresin；Described graphene
Low defect graphene film of the saturating infra-red electromagnetic screened film for preparation on copper foil.
It is preferred that, the foregoing sulphur system optical element with capability of electromagnetic shielding, wherein the material of described inorganic film
For SiO2When, the thickness of inorganic film is 5-30nm；The material of described inorganic film is Al2O3When, the thickness of inorganic film is
10-25nm；The material of described inorganic film is HfO2When, the thickness of inorganic film is 10-30nm；Described organic coating is
During polyimide resin, the thickness of organic coating is 6-12 μm；When described organic coating is organic siliconresin, organic coating
Thickness is 8-12 μm.
It is preferred that, the foregoing sulphur system optical element with capability of electromagnetic shielding, wherein described graphene infrared electricity thoroughly
The number of plies of magnetic shield film is 3-10 layers.
By above-mentioned technical proposal, sulphur system optical element of the present invention with capability of electromagnetic shielding and preparation method thereof is at least
With following advantages：
1st, the sulphur system optical element with capability of electromagnetic shielding of the invention is compared to the light using metallic mesh as shield
Element is learned, its realizability is strong, and the preparation method of the present invention is simple, low manufacture cost.
2nd, service band light absorbs system of the sulphur system optical element with capability of electromagnetic shielding of the invention at 1.06-12 μm
Number is small, and light transmittance is high, and effectiveness is strong；Its square resistance is less than 35 Ω/, and electromagnet shield effect is more than 15dB, infrared
Transmission loss is less than 3%.
3rd, the compound transition zone of the sulphur system optical element with capability of electromagnetic shielding of the invention includes inorganic film and had
Organic coating, compound transition zone and the saturating infra-red electromagnetic screened film of graphene and sulphur system optical element base adhesive of the invention is good,
And add the infrared light transmission rate of the optical element of the present invention.
4th, the saturating infra-red electromagnetic screened film of graphene of the invention is without Moire fringe phenomenon, using the optics member of its preparation
Part can reduce assembly complexity during applied to infrared imaging system, and the optical element electrical conductivity prepared is high, electromagnetic shielding
Efficiency is good.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention,
And can be practiced according to the content of specification, below with presently preferred embodiments of the present invention and coordinate accompanying drawing describe in detail as after.
Brief description of the drawings
Fig. 1 is the structural representation of sulphur system optical element of the present invention with capability of electromagnetic shielding.
Embodiment
Further to illustrate the present invention to reach the technological means and effect that predetermined goal of the invention is taken, below in conjunction with
Accompanying drawing and preferred embodiment, to according to sulphur system optical element proposed by the present invention with capability of electromagnetic shielding and preparation method thereof
Its embodiment, structure, feature and its effect, are described in detail as after.In the following description, different " embodiment " or
What " embodiment " referred to is not necessarily same embodiment.In addition, the special characteristic, structure or feature in one or more embodiments can
Combined by any suitable form.
A kind of preparation method for sulphur system optical element with capability of electromagnetic shielding that one embodiment of the present of invention is proposed,
It comprises the following steps:
(1) in sulphur system optical element substrate surface plating inorganic film；
Splashed preferably, the plated film mode of the inorganic film described in embodiments of the invention is electron beam evaporation or radio frequency magnetron
Penetrate method；The plating steps of described inorganic film include：Background vacuum is less than 8 × 10 during plated film-4Pa, the baking of plated film front opening
Chalcogenide glass plating piece substrate surface is heated to 50-100 DEG C and is incubated 20-30min by lamp, opens ion gun Ar+Ion pair sulphur
It is optical element surface cleaning, scavenging period is 15-20min, electron gun is opened after cleaning in chalcogenide glass plating piece substrate surface
The material of inorganic film is deposited；
Preferably, the material of the inorganic film described in embodiments of the invention is SiO2、Al2O3Or HfO2；Lived using interface
Property group and chemical bond polarity close inorganic material is First Transition layer therewith, to strengthen compound transition zone and sulphur system glass optics
The adhesive strength of element；Inorganic film material selection SiO2、Al2O3Or HfO2Film layer adhesive strength and infrared light transmission can be taken into account
Rate.
Preferably, the material of the inorganic film described in embodiments of the invention is SiO2When, the thickness of inorganic film is 5-
30nm；The material of described inorganic film is Al2O3When, the thickness of inorganic film is 10-25nm；The material of described inorganic film
Expect for HfO2When, the thickness of inorganic film is 10-30nm.
(2) in described inorganic film surface spraying organic coating；
Preferably, the spraying process of the organic coating described in embodiments of the invention includes：By the material of organic coating with
Curing agent is mixed, and is quickly sufficiently stirred for, vacuum row's bubble, is then sprayed on inorganic film surface, wherein the material of organic coating
Volume ratio with curing agent is 25-35：1.Adding curing agent can be such that organic coating solidifies quickly, and increase organic coating is hard
Degree, organic coating is not destroyed when making to shift the saturating infra-red electromagnetic screened film of black alkene below.
Preferably, the material of the organic coating described in embodiments of the invention is polyimide resin or organic siliconresin；
Organic coating selects the organic material that stronger adhesive strength is respectively provided with above-mentioned inorganic film and graphene film, polyimides tree
Fat and organic siliconresin are not readily dissolved in the organic solvent of subsequent treatment and infrared transmission performance is higher.
Preferably, the glue spreader that embodiments of the invention can carry out plane motion using nozzle carries out the spray of organic coating
Apply, to organic coating even application.
Preferably, when the organic coating described in embodiments of the invention is polyimide resin, the thickness of organic coating is
6-12μm；When described organic coating is organic siliconresin, the thickness of organic coating is 8-12 μm.
Inorganic film and the compound transition zone that organic coating is the sulphur system optical element with capability of electromagnetic shielding.
(3) the saturating infra-red electromagnetic screened film of graphene is transferred to the surface of described organic coating, obtained with electromagnetic screen
Cover the sulphur system optical element of performance.
Preferably, the saturating infra-red electromagnetic screened film of graphene described in embodiments of the invention is low scarce on copper foil to prepare
Fall into graphene film.The saturating infra-red electromagnetic screened film of the present embodiment graphene is made up of high purity graphite alkene transparent conductive film.
Preferably, using wet-etching technology the saturating infra-red electromagnetic screened film of graphene is transferred in the present embodiment described
The surface of organic coating.
Preferably, the number of plies of the saturating infra-red electromagnetic screened film of the graphene of the present embodiment transfer is 3-10 layers.
To being cleaned before Liu Xi optical elements basic unit plated film in the present invention, first by alcohol-ether mixed liquor to it
Deoil, then wiped chalcogenide glass optical element substrate surface to can plated film cleanliness factor with absolute ethyl alcohol.
Compared with metallic mesh, graphene film has more excellent comprehensive physical performance.Unique atomic structure makes
Graphene film has physical characteristics such as " superhigh current carrying transport factors ", " extremely low absorptivity " and " extremely strong mechanical property ".
The calculated results show that the superhigh current carrying transport factor of graphene makes it to be obtained under relatively low carrier concentration better than gold
Belong to the electrical conductivity of grid.Theoretical according to " Drude- free electrons ", reduction carrier concentration can make the plasma of conductive film
Red shift of wavelength, effectively improves optical transmittance of the conductive film material in infrared band.Therefore, the content of the invention of this patent had been both
It is sulphur system optical element with capability of electromagnetic shielding of the class by shield material of graphene film.Meanwhile, for wet method
Etch in the problem of adhesive force is poor between the graphene film shifted and substrate, this patent and specially propose a kind of compound transition
Layer, to improve adhesion strength of the saturating infra-red electromagnetic screened film of graphene on chalcogenide glass surface.Preparation method described in this patent
Also simultaneously suitable for other infrared optical materials beyond chalcogenide glass.
As shown in figure 1, a kind of sulphur system optics member with capability of electromagnetic shielding that an alternative embodiment of the invention is proposed
Part, it includes：
Liu Xi optical elements basic unit 1；
Inorganic film 2, is attached in described basic unit；
Organic coating 3, is attached on described inorganic film；
The saturating infra-red electromagnetic screened film 4 of graphene, is attached to described organic coating.
Inorganic film 2 and the compound transition zone that organic coating 3 is the sulphur system optical element with capability of electromagnetic shielding.
Preferably, the material of the inorganic film described in the embodiment of the present invention is SiO2、Al2O3Or HfO2；Described organic painting
The material of layer is polyimide resin or organic siliconresin；The saturating infra-red electromagnetic screened film of described graphene is preparation on copper foil
Low defect graphene film.
Preferably, the material of the inorganic film described in the embodiment of the present invention is SiO2When, the thickness of inorganic film is 5-
30nm；The material of described inorganic film is Al2O3When, the thickness of inorganic film is 10-25nm；The material of described inorganic film
Expect for HfO2When, the thickness of inorganic film is 10-30nm；When described organic coating is polyimide resin, organic coating
Thickness is 6-12 μm；When described organic coating is organic siliconresin, the thickness of organic coating is 8-12 μm.
Preferably, the number of plies of the saturating infra-red electromagnetic screened film of graphene described in the embodiment of the present invention is 3-10 layers.
Embodiment 1
Flat board sulphur system optical element substrate surface is wiped to being capable of plated film using alcohol-ether mixed liquor and absolute ethyl alcohol
Cleanliness factor；Plated film is carried out using electron-beam vapor deposition method, background vacuum is 5 × 10-4Pa, plated film front opening drying lamp is by flat board sulphur
It is that the surface of glass window plating piece is heated to 80 DEG C and is incubated 20min, opens ion gun Ar+Ion pair plating piece surface carry out from
Son cleaning 15min, finally opens electron gun to high-purity Si O2Coating materials is deposited, and prepares SiO2The thickness of film layer is 15nm；To have
Machine silicones and curing agent by volume 30：1 ratio is mixed, and is sufficiently stirred for 2min, and 5 × 10-2Pa vacuum
Lower row steeps 15min, organic colloid is obtained, using glue spreader by the organic colloid even application of acquisition in SiO2Film surface, is treated
It forms organic coating after solidifying, organic siliconresin thickness is 10 μm；It will be prepared using wet-etching technology on copper foil
Low defect graphene film be transferred to above-mentioned organic coating layer surface, shift the saturating infra-red electromagnetic screened film of 4 layer graphenes, had
There is the sulphur system optical element of capability of electromagnetic shielding.
There is the square resistance of the sulphur system optical element of capability of electromagnetic shielding to be 30 Ω/ for this, and electromagnet shield effect is
16dB, infrared transmission loss is only 2.9%.
Embodiment 2
Flat board sulphur system optical element substrate surface is wiped to being capable of plated film using alcohol-ether mixed liquor and absolute ethyl alcohol
Cleanliness factor；Plated film is carried out using radio-frequency magnetron sputter method, background vacuum is 4 × 10-4Pa, plated film front opening drying lamp is by flat board
The surface of chalcogenide glass window plating piece is heated to 50 DEG C and is incubated 30min, opens ion gun Ar+The ion pair plating piece surface is entered
Row Ion Cleaning 20min, finally opens electron gun to high-purity Al2O3Coating materials is deposited, and prepares Al2O3The thickness of film layer is
10nm；By polyimide resin and curing agent by volume 25：1 ratio is mixed, and is sufficiently stirred for 2min, and 5 × 10- 2Row's bubble 15min, obtains organic colloid, using glue spreader by the organic colloid even application of acquisition in Al under Pa vacuum2O3
Film surface, after forming organic coating after its solidification, polyimide resin thickness is 8 μm；Using wet-etching technology by
Prepare the low defect graphene film on copper foil and be transferred to above-mentioned organic coating layer surface, shift the saturating infra-red electromagnetic of 3 layer graphenes
Screened film, obtains the sulphur system optical element with capability of electromagnetic shielding.
There is the square resistance of the sulphur system optical element of capability of electromagnetic shielding to be 29 Ω/ for this, and electromagnet shield effect is
18dB, infrared transmission loss is only 2.8%.
Embodiment 3
Flat board sulphur system optical element substrate surface is wiped to being capable of plated film using alcohol-ether mixed liquor and absolute ethyl alcohol
Cleanliness factor；Plated film is carried out using radio-frequency magnetron sputter method, background vacuum is 7 × 10-4Pa, plated film front opening drying lamp is by flat board
The surface of chalcogenide glass window plating piece is heated to 100 DEG C and is incubated 20min, opens ion gun Ar+The ion pair plating piece surface
Ion Cleaning 15min is carried out, electron gun is finally opened to high-purity HfO2Coating materials is deposited, and prepares HfO2The thickness of film layer is
30nm；By polyimide resin and curing agent by volume 35：1 ratio is mixed, and is sufficiently stirred for 2min, and 5 × 10- 2Row's bubble 15min, obtains organic colloid, using glue spreader by the organic colloid even application of acquisition in HfO under Pa vacuum2It is thin
Film surface, after forming organic coating after its solidification, polyimide resin thickness is 12 μm；It will be made using wet-etching technology
The standby low defect graphene film on copper foil is transferred to above-mentioned organic coating layer surface, shifts the saturating infra-red electromagnetic screen of 10 layer graphenes
Film is covered, the sulphur system optical element with capability of electromagnetic shielding is obtained.
There is the square resistance of the sulphur system optical element of capability of electromagnetic shielding to be 33 Ω/ for this, and electromagnet shield effect is
20dB, infrared transmission loss is only 2.5%.
The above described is only a preferred embodiment of the present invention, any formal limitation not is made to the present invention, according to
Any simple modification, equivalent variations and the modification made according to the technical spirit of the present invention to above example, still fall within this hair
In the range of bright technical scheme.
Claims (10)
1. a kind of preparation method of the sulphur system optical element with capability of electromagnetic shielding, it is characterised in that：It comprises the following steps:
(1) in sulphur system optical element substrate surface plating inorganic film；
(2) in described inorganic film surface spraying organic coating；
(3) the saturating infra-red electromagnetic screened film of graphene is transferred to the surface of described organic coating, obtained with electromagnetic wave shielding
The sulphur system optical element of energy.
2. the preparation method of the sulphur system optical element according to claim 1 with capability of electromagnetic shielding, it is characterised in that
The plated film mode of described inorganic film is electron beam evaporation or radio-frequency magnetron sputter method；The plating steps of described inorganic film
Including：Background vacuum is less than 8 × 10 during plated film-4Pa, plated film front opening drying lamp heats chalcogenide glass plating piece substrate surface
To 50-100 DEG C and it is incubated 20-30min, opens ion gun Ar+The optical element surface cleaning of ion pair sulphur system, opens electron gun
The material of inorganic film is deposited in chalcogenide glass plating piece substrate surface；The spraying process of described organic coating includes：
The material of organic coating is mixed with curing agent, stirred, then vacuum row's bubble is sprayed on inorganic film surface, wherein organic
The material of coating and the volume ratio of curing agent are 25-35：1.
3. the preparation method of the sulphur system optical element according to claim 1 with capability of electromagnetic shielding, it is characterised in that
Graphene saturating infra-red electromagnetic screened film is transferred to the surface of described organic coating in step (3) using wet-etching technology.
4. the preparation method of the sulphur system optical element according to claim 1 with capability of electromagnetic shielding, it is characterised in that
The material of described inorganic film is SiO2、Al2O3Or HfO2；The material of described organic coating is polyimide resin or had
Machine silicones；Low defect graphene film of the saturating infra-red electromagnetic screened film of described graphene for preparation on copper foil.
5. the preparation method of the sulphur system optical element according to claim 4 with capability of electromagnetic shielding, it is characterised in that
The material of described inorganic film is SiO2When, the thickness of inorganic film is 5-30nm；The material of described inorganic film is
Al2O3When, the thickness of inorganic film is 10-25nm；The material of described inorganic film is HfO2When, the thickness of inorganic film is
10-30nm；When described organic coating is polyimide resin, the thickness of organic coating is 6-12 μm；Described organic coating
During for organic siliconresin, the thickness of organic coating is 8-12 μm.
6. the preparation method of the sulphur system optical element according to claim 1 with capability of electromagnetic shielding, it is characterised in that
The number of plies of the saturating infra-red electromagnetic screened film of the graphene of transfer is 3-10 layers.
7. a kind of sulphur system optical element with capability of electromagnetic shielding, it is characterised in that：It includes：
Liu Xi optical elements basic unit；
Inorganic film, is attached in described basic unit；
Organic coating, is attached on described inorganic film；
The saturating infra-red electromagnetic screened film of graphene, is attached to described organic coating.
8. the sulphur system optical element according to claim 7 with capability of electromagnetic shielding, it is characterised in that described is inorganic
The material of film layer is SiO2、Al2O3Or HfO2；The material of described organic coating is polyimide resin or organic siliconresin；Institute
Low defect graphene film of the saturating infra-red electromagnetic screened film of graphene stated for preparation on copper foil.
9. the sulphur system optical element according to claim 8 with capability of electromagnetic shielding, it is characterised in that described is inorganic
The material of film layer is SiO2When, the thickness of inorganic film is 5-30nm；The material of described inorganic film is Al2O3When, inoranic membrane
The thickness of layer is 10-25nm；The material of described inorganic film is HfO2When, the thickness of inorganic film is 10-30nm；Described
When organic coating is polyimide resin, the thickness of organic coating is 6-12 μm；When described organic coating is organic siliconresin,
The thickness of organic coating is 8-12 μm.
10. the sulphur system optical element according to claim 7 with capability of electromagnetic shielding, it is characterised in that described stone
The number of plies of the black saturating infra-red electromagnetic screened film of alkene is 3-10 layers.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110519976A (en) * | 2019-08-08 | 2019-11-29 | 湖北久之洋红外系统股份有限公司 | A kind of sapphire optical window and preparation method with electro-magnetic screen function |
| CN113754313A (en) * | 2021-09-27 | 2021-12-07 | 中国建筑材料科学研究总院有限公司 | Chalcogenide glass infrared electromagnetic shielding window and preparation method thereof |
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| CN110519976B (en) * | 2019-08-08 | 2020-05-22 | 湖北久之洋红外系统股份有限公司 | Sapphire optical window with electromagnetic shielding function and preparation method |
| CN113754313A (en) * | 2021-09-27 | 2021-12-07 | 中国建筑材料科学研究总院有限公司 | Chalcogenide glass infrared electromagnetic shielding window and preparation method thereof |
| CN113754313B (en) * | 2021-09-27 | 2023-06-30 | 中国建筑材料科学研究总院有限公司 | Chalcogenide glass infrared electromagnetic shielding window and preparation method thereof |
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| CN107144899B (en) | 2023-04-18 |
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