CN107134614A - A kind of multi-layer ceramics microwave band-pass filter - Google Patents
A kind of multi-layer ceramics microwave band-pass filter Download PDFInfo
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- CN107134614A CN107134614A CN201710312999.7A CN201710312999A CN107134614A CN 107134614 A CN107134614 A CN 107134614A CN 201710312999 A CN201710312999 A CN 201710312999A CN 107134614 A CN107134614 A CN 107134614A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 134
- 239000002184 metal Substances 0.000 claims abstract description 134
- 230000008878 coupling Effects 0.000 claims abstract description 31
- 238000010168 coupling process Methods 0.000 claims abstract description 31
- 238000005859 coupling reaction Methods 0.000 claims abstract description 31
- 230000005611 electricity Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000003780 insertion Methods 0.000 abstract description 6
- 230000037431 insertion Effects 0.000 abstract description 6
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000002787 reinforcement Effects 0.000 description 6
- 239000007787 solid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
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- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention provides a kind of multi-layer ceramics microwave band-pass filter, belong to microwave function device arts.The present invention includes termination electrode and two ground metal layers in dielectric layer, it is provided with and is spaced in conplane four UIR structures between two ground metal layers, four UIR structures are broadside coupled multilayer stripline structure, strengthen coupling between coupling metal level enhancing first order UIR structures and fourth stage UIR structures by setting first, second is set to strengthen coupling between coupling metal level strengthens four UIR structures, first order UIR structures and fourth stage UIR structures are respectively equipped with input/output terminal with external circuitses.The present invention can reduce the loss of energy by designing novel coupling structure, and then reduce logical in-band insertion loss, can realize that frequency is low, passband fluctuation is small, no parasitic passband and the good miniature microwave wave filter of Out-of-band rejection.
Description
Technical field
The invention belongs to microwave function device arts, and in particular to a kind of multi-layer ceramics microwave band-pass filter.
Background technology
Microwave typically refers to the electromagnetic wave that wavelength is in 1mm to 1m (frequency is in 300MHz to 300GHz), be decimetric wave, li
The general designation of metric wave, millimeter wave.The basic performance of microwave typically appears as penetrating, reflects, absorbs these three performance characteristics.Due to this
A little features, microwave is widely used in radar, micro-wave oven, plasma generator, sensing system and Radio Network System (such as hand
The technologies such as machine network, bluetooth, satellite television, WLAN) etc. field.
Microwave filter is the key passive part in radio circuit, the selection function of frequency is completed in systems, extensively
Applied to radar, the microwave radio circuit such as wireless receiver.With the continuous progressive and development of industrial technology, novel electron system
Requirement to packing density and function is continuously increased, and passive filter is just towards miniaturization, and high performance direction is developed.
For the performance and reduction volume of Optimal Filter, based on LTCC (Low Temperature Co-
Fired Ceramic, LTCC) the Multilayer filter designing technique of technology receives much concern recently.LTCC technology has high frequency characteristics
Good, reliability is high, adaptability is good, the low feature of cost of implementation, and passive device and active device can be effectively combined one
Rise, be especially suitable for the integrated development of compact radio frequency microwave circuit.
However, also there is the problem of many has to be solved in the optimization for the size reduction of the circuit containing resonator.It is micro-
The miniaturization of wave filter has become a popular research field, and it is that wave filter is ground that performance is improved on the basis of miniaturization
The main contents studied carefully.
The content of the invention
In order to overcome the deficiencies in the prior art, the present invention provides a kind of multi-layer ceramics microwave band-pass filter, and the present invention is logical
Cross design novel coupling structure, strengthen the coupling between each UIR resonance structures so that device have centre frequency it is relatively low,
The features such as size is less, Out-of-band rejection is good, passband fluctuation is small.
To achieve the above object, the present invention provides following technical scheme：
A kind of multi-layer ceramics microwave band-pass filter, including：Electricity in termination electrode and dielectric layer that flat shape is set, dielectric layer
Pole includes：
The first ground metal layer being vertically connected respectively with two termination electrodes and the second metallic ground metal level, the first ground connection
It is described provided with being spaced in conplane four uniform impedance resonators between metal level and the second metallic ground metal level
Plane is parallel with two ground metal layers, and four uniform impedance resonators are broadside coupled multilayer stripline structure；
Four uniform impedance resonator parallel beneaths are provided with by the first sheet metal, and the second sheet metal and the 3rd sheet metal are first
The first reinforcement coupling metal level that tail is connected to form, wherein：The setting direction of first sheet metal is mutually hung down with uniform impedance resonator
Directly, and it is set up in immediately below four uniform impedance resonators, the head end of the first sheet metal is located at the first uniform impedance resonator
Underface, and the first termination electrode, the first sheet metal are connected to by the second sheet metal along the first uniform impedance resonator direction
Tail end immediately below the 4th uniform impedance resonator, and pass through the 3rd sheet metal along the 4th uniform impedance resonator direction
It is connected to the second termination electrode；
It is arranged with parallel above four uniform impedance resonators by the 4th sheet metal, fifth metal piece and the 6th sheet metal phase
Second even formed strengthens coupling metal level, wherein：The setting direction and uniform impedance resonator of 4th sheet metal are perpendicular, and
And be set up in directly over four uniform impedance resonators, the head end of fifth metal piece is humorous in the second uniform impedance with the 4th sheet metal
The place directly over device that shakes is connected, and is connected to the second termination electrode, the head of the 6th sheet metal along the second uniform impedance resonator direction
End is located to be connected with the 4th sheet metal directly over the 4th uniform impedance resonator, and connects along the 4th uniform impedance resonator direction
The first termination electrode is connected to,
First uniform impedance resonator is respectively equipped with away from earth terminal and the 4th uniform impedance resonator away from earth terminal
One metal level and second metal layer respectively as wave filter input and output end, wherein：The first metal layer and second
Metal level connects external circuit using tap structure.
Further, first ground metal layer and the second ground metal layer use LTCC technique system
Make, be specifically that silver paste is printed on dielectric layer.
Further, in order to reduce resonant frequency, the structure of four uniform impedance resonators of the invention is using five layers of phase
The structure that the strip metal that mutually isolation is set passes through broadside coupled formation.
Further, each layer strip metal passes through the first termination electrode or second in any uniform impedance resonator in the present invention
Termination electrode is grounded, wherein, it is inconsistent that two layers of strip metal of arbitrary neighborhood is grounded connected termination electrode.
Preferably, the present invention in any uniform impedance resonator length in 4.65mm~4.75mm scopes
Interior, width is in the range of 0.22mm~0.23mm.
Preferably, in the present invention in any uniform impedance resonator between two layers of strip metal of arbitrary neighborhood
Distance be 0.045mm~0.055mm.
Preferably, the distance between adjacent uniform impedance resonator of any two is 0.57 in the present invention
~0.59mm.
Preferably, the distance between the first ground metal layer and the second metallic ground metal level in the present invention
For 0.9mm~1.1mm.
Preferably, in the present invention the first metal layer and the width of second metal layer be 0.085mm~
0.950mm。
Preferably, the first reinforcement coupling metal level is located at where uniform impedance resonator in the present invention
Below plane at 0.23mm~0.27mm, its width is 0.22mm~0.23mm；Wherein：The length of first sheet metal be 1.5~
1.6mm。
Preferably, the second reinforcement coupling metal level is located at where uniform impedance resonator in the present invention
Below plane at 0.28mm~0.31mm, its width is 0.15mm~0.23mm；Wherein：The length of 4th sheet metal be 1.7~
2.0mm。
Microwave filter of the present invention is made using LTCC technique, is caused because four UIR structures are distant
Intercouple weaker, this weak coupling causes the transmission of useful signal to be obstructed, therefore present invention design is strengthened coupling metal level and added
Intercoupling between strong first UIR structures, the 2nd UIR structures, the 3rd UIR structures and the 4th UIR structures so that useful signal
Transmittability enhancing, the especially second design for strengthening coupling metal level be realize voltage standing wave ratio VSWR, it is Out-of-band rejection, logical
The key structure optimized with drain performance.
The beneficial effects of the invention are as follows：
The present invention is the uniform impedance resonance structure radio frequency band filter made based on LTCC techniques, and the present invention passes through folded
One strip line is distributed in Different Plane, by setting arbitrary neighborhood two by layer technology to Space Expanding based on interior even technology
The ground connection of layer strip metal is in opposite direction so that there is potential difference between any two ribbons metal, so produce mutual capacitance and
Mutual inductance；Further, the present invention strengthens coupling metal level by being set between single-stage uniform impedance resonance structure so that each
Capacitance Coupled is strengthened between resonator, and then reduces the loss of energy, the purpose of the logical in-band insertion loss of reduction is reached, according to this
Inventive embodiments can be seen that by reasonable design structure parameter and material parameter, can realize that frequency is low, passband fluctuation is small,
Without parasitic passband and the good miniature microwave wave filter of Out-of-band rejection.
Brief description of the drawings
Fig. 1 is the structural representation of the microwave band-pass filter of the invention based on LTCC techniques；Wherein, figure (a) is microwave
The 3-D solid structure schematic diagram of bandpass filter, figure (b) is the front view of the 3-D solid structure of microwave band-pass filter, figure
(c) for microwave band-pass filter 3-D solid structure top view, figure (d) be microwave band-pass filter 3-D solid structure
Left view；1 is the first ground metal layer in figure, and 2 be the first reinforcement coupling metal level, and 3 be the first uniform impedance resonance structure,
4 be the second uniform impedance resonance structure, and 5 be the 3rd uniform impedance resonance structure, and 6 be the first uniform impedance resonance structure, and 7 be the
One metal level, 8 be second metal layer, and 9 be the second reinforcement coupling metal level, and 10 be the second ground metal layer, and 11 be dielectric layer, 12
It is the second termination electrode for the first termination electrode, 13.
Fig. 2 is that the embodiment of the present invention is based on the obtained microwave band-pass filter of LTCC techniques under 0.45~0.8GHz frequencies
S21 performance curve.
Fig. 3 is microwave band-pass filter of the embodiment based on LTCC techniques voltage standing wave ratio under 0.45~0.8GHz frequencies
VSWR performance test curves.
Fig. 4 is parasitic passband figure of microwave band-pass filter of the embodiment based on LTCC techniques under 0~3GHz frequencies.
Embodiment
The specific embodiment of the invention is described in detail below in conjunction with Figure of description：
Embodiment：
As shown in figure 1, the invention provides a kind of multi-layer ceramics microwave band-pass filter, including：The end electricity that flat shape is set
Electrode includes in pole 12~13 and dielectric layer 11, dielectric layer 11：First be vertically connected respectively with two termination electrodes 12~13
The metallic ground metal level 10 of ground metal layer 1 and second, sets between the first ground metal layer 1 and the second metallic ground metal level 10
It is spaced in conplane four uniform impedance resonators 3~6, the plane and two ground metal layers 1,10 are flat
OK, four uniform impedance resonators 3~6 are broadside coupled multilayer stripline structure；
Four parallel beneaths of uniform impedance resonator 3~6 are provided with by the first sheet metal, the second sheet metal and the 3rd metal
Piece join end to end to be formed first strengthen coupling metal level 2, wherein：The setting direction of first sheet metal and uniform impedance resonator
It is perpendicular, and be set up in immediately below four uniform impedance resonators 3~6, the head end of the first sheet metal is located at the first uniform resistance
Immediately below antiresonance device 3, and first end is connected to by the second sheet metal set along the direction of the first uniform impedance resonator 3
Electrode 12, the tail end of the first sheet metal is immediately below the 4th uniform impedance resonator 6, and by along the 4th uniform impedance resonance
The 3rd sheet metal that the direction of device 6 is set is connected to the second termination electrode 13；
Four tops of uniform impedance resonator 3~6 are arranged with parallel by the 4th sheet metal, fifth metal piece and the 6th metal
The second reinforcement coupling metal level 9 that piece is connected to form, wherein：The setting direction of 4th sheet metal is mutually hung down with uniform impedance resonator
Directly, and it is set up in directly over four uniform impedance resonators 3~6, the head end of fifth metal piece and the 4th sheet metal are second
It is connected at directly over uniform impedance resonator 4, and the second termination electrode is connected to along the direction of the second uniform impedance resonator 4, the
The head end of six sheet metals is connected with the 4th sheet metal at the surface of the 4th uniform impedance resonator 6, and is uniformly hindered along the 4th
The direction of antiresonance device 6 is connected to the first termination electrode 12；
First uniform impedance resonator 3 is away from the end of the first termination electrode 12 and the 4th uniform impedance resonator 6 away from first end
The end of electrode 12 is respectively equipped with the first metal layer 7 and second metal layer 8 as the input and output end of wave filter, wherein：First
The second metal layer 8 of metal level 7 is connected with external circuitses using tap structure, preferably, tap structure located at from
The distalmost end of first termination electrode 12.
The present embodiment is using the first metal layer 7 as input, and second metal layer 8 is as output end, then correspondingly, such as Fig. 1,
Signal is sequentially ingressed into the first UIR structures 3, the 2nd UIR structures 4 and the 3rd UIR from the high order end of the first UIR structures 3 (i.e. -Y direction)
The UIR structures 6 of structure 5 and the 4th, are finally exported from the low order end (i.e. +Y direction) of the 4th UIR structures 6.
The embodiment of the present invention additionally provides the specific design based on LTCC technique microwave band-pass filters, the present embodiment design
Microwave band-pass filter detailed performance require it is as shown in the table：
The wave filter design of the present embodiment is to use strip line, because LTCC filter sizes are smaller, using individual layer conduction band
Strip line can not meet design needs, therefore using five layers of uniform properties impedance resonance structure (hereinafter referred to as UIR resonance
Structure) to reduce resonant frequency, and then enable device to be operated in relatively low frequency；
Electrode matel material is silver in the present embodiment, and the relative dielectric constant of the material therefor of dielectric layer 11 is 35.
UIR resonance structures at different levels are broadside coupled multilayer stripline structure, therefore it can be seen from transmission line theory：Banding
Line be by a thickness be dh, width is w, and length l rectangular conductor and upper and lower two pieces of grounding plates are constituted, two ground connection gold
It is that the electric capacity C and inductance L in b, its unit length are calculated by below equation to belong to the distance between plate：
Centre frequency：
In such as upper table, the centre frequency f of the present embodiment device0For 625MHz, using MATALAB softwares according to above three
Formula, which is calculated, obtains b for 1mm, and w is 0.225mm, and long l is 4.69mm.
Then the present embodiment carries out simulation optimization using HFSS softwares, in order to obtain 50MHz broadband, finally gives 4 grades
UIR structures, and the distance between two neighboring uniform impedance resonator is neighbouring strip in 0.58mm, any electric impedance resonator
The distance between metal level is 0.05mm.
Further, in order to obtain Out-of-band rejection and reduce in-band insertion loss, in first order UIR structures 3 and the 4th
Capacitance Coupled is added between UIR structures 6, i.e., first strengthens coupling metal level 2, in the first UIR structures 3, the 2nd UIR structures 4
And the 3rd add Capacitance Coupled between UIR structures 5 and the 4th UIR structures 6, i.e., second strengthens coupling metal level 9；
Strengthen coupling metal level 2 and second for first and strengthen coupling metal level 9, size and position are determined by emulation,
Width is 0.2mm, and first strengthens the coupling position of metal level 2 0.24mm below the place plane of uniform impedance resonator 3~6
Place, second strengthens the coupling position of metal level 9 above the place plane of uniform impedance resonator 3~6 at 0.3mm.
Thereby determine that size 5.0mm × 5.0mm × 1.5mm of whole device.
Determination final graphics are optimized using HFSS softwares, the width for designing the first metal layer 7 and second metal layer 8 is equal
For 0.09mm, Fig. 1 is seen.
It is as shown below according to the Performance Simulation Results that said structure parameter obtains the present embodiment microwave filter：
Fig. 2 is insertion loss S21 situation of the embodiment of the present invention in 0.45GHz to 0.8GHz, can from Fig. 2
Go out：In passband (600MHz~650MHz), insertion loss is less than 3.5dB, with a width of 50MHz, and Out-of-band rejection is more than 40dB,
Passband fluctuation is less than 1.0dB.
Fig. 3 is standing-wave ratio (VSWR) situation of the embodiment of the present invention in 0.45GHz~0.8GHz, can from Fig. 3
Go out：The voltage standing wave(VSW) highest order 1.4349 in 600~650MHz, less than 1.5.
Fig. 4 is insertion loss S21 situation of the embodiment of the present invention in 0GHz~3GHz, as can be seen from Figure 4：0
There is no the passband of parasitism in~3GHz.
Embodiments of the invention are set forth above in association with accompanying drawing, but the invention is not limited in above-mentioned specific
Embodiment, above-mentioned embodiment is only schematical, rather than restricted, and one of ordinary skill in the art exists
Under the enlightenment of the present invention, in the case of present inventive concept and scope of the claimed protection is not departed from, many shapes can be also made
Formula, these are belonged within the protection of the present invention.
Claims (10)
1. a kind of multi-layer ceramics microwave band-pass filter, including the termination electrode (12,13) and dielectric layer (11) that flat shape is set, it is special
Levy and be：Electrode includes in dielectric layer (11)：
The first ground metal layer (1) being vertically connected respectively with two termination electrodes (12,13) and the second metallic ground metal level
(10), it is provided with and is spaced in conplane four between the first ground metal layer (1) and the second metallic ground metal level (10)
Individual uniform impedance resonator (3~6), the plane is parallel with two ground metal layers (1,10), four uniform impedance resonators
(3~6) are broadside coupled multilayer stripline structure；
Four uniform impedance resonator (3~6) parallel beneaths are provided with by the first sheet metal, the second sheet metal and the 3rd sheet metal
To be formed first that join end to end strengthens coupling metal level (2), wherein：The setting direction of first sheet metal and uniform impedance resonator
It is perpendicular, and be set up in immediately below four uniform impedance resonators (3~6), the head end of the first sheet metal is uniform located at first
Immediately below electric impedance resonator (3), and first end is connected to by the second sheet metal along first uniform impedance resonator (3) direction
Electrode (12), the tail end of the first sheet metal is immediately below the 4th uniform impedance resonator (6), and by along the 4th uniform impedance
3rd sheet metal in resonator (6) direction is connected to the second termination electrode (13)；
It is arranged with parallel above four uniform impedance resonators (3~6) by the 4th sheet metal, fifth metal piece and the 6th sheet metal
Second be connected to form strengthens coupling metal level (9), wherein：The setting direction of 4th sheet metal is mutually hung down with uniform impedance resonator
Directly, and it is set up in directly over four uniform impedance resonators (3~6), the head end of fifth metal piece and the 4th sheet metal are the
It is connected at directly over two uniform impedance resonators (4), and the second end electricity is connected to along second uniform impedance resonator (4) direction
Pole (13), the head end of the 6th sheet metal is connected with the 4th sheet metal at the 4th uniform impedance resonator (6) surface, and edge
4th uniform impedance resonator (6) direction is connected to the first termination electrode (12),
First uniform impedance resonator (3) is respectively equipped with away from earth terminal with the 4th uniform impedance resonator (6) away from earth terminal
The first metal layer (7) and second metal layer (8) respectively as wave filter input and output end, wherein：First metal
Layer (7) and second metal layer (8) connect external circuit using tap structure.
2. a kind of multi-layer ceramics microwave band-pass filter according to claim 1, it is characterised in that four uniform impedances are humorous
The structure of device (3~6) of shaking is that the strip metal of five layers of mutually isolated setting passes through the structure of broadside coupled formation.
3. a kind of multi-layer ceramics microwave band-pass filter according to claim 2, it is characterised in that any uniform impedance is humorous
Shake device length in the range of 4.65mm~4.75mm, width is in the range of 0.22mm~0.23mm.
4. a kind of multi-layer ceramics microwave band-pass filter according to claim 2, it is characterised in that any uniform impedance is humorous
The distance between two layers of strip metal of arbitrary neighborhood in device of shaking is 0.045mm~0.055mm.
5. a kind of multi-layer ceramics microwave band-pass filter according to claim 2, it is characterised in that any two is adjacent
The distance between uniform impedance resonator is in the range of 0.57~0.59mm.
6. a kind of multi-layer ceramics microwave band-pass filter according to claim 2, it is characterised in that any uniform impedance is humorous
Each layer strip metal in device of shaking is grounded by the first termination electrode (12) or the second termination electrode (13), wherein, two layers of band of arbitrary neighborhood
It is inconsistent that shape metal is grounded connected termination electrode.
7. a kind of multi-layer ceramics microwave band-pass filter according to claim 1, it is characterised in that the first ground metal layer
And the distance between the second metallic ground metal level (10) is 0.9mm~1.1mm (1).
8. a kind of multi-layer ceramics microwave band-pass filter according to claim 1, it is characterised in that the first metal layer (7)
Width with second metal layer (8) is 0.085mm~0.95mm.
9. a kind of multi-layer ceramics microwave band-pass filter according to claim 1, it is characterised in that first strengthens coupling gold
Belong to layer (2) to be located at where uniform impedance resonator (3~6) below plane at 0.23mm~0.27mm, first strengthens coupling
Metal level (2) width is 0.22mm~0.23mm；Wherein：The length of first sheet metal is 1.5~1.6mm.
10. a kind of multi-layer ceramics microwave band-pass filter according to claim 1, it is characterised in that second strengthens coupling
Metal level (9) is located at where uniform impedance resonator (3~6) below plane at 0.28mm~0.31mm, and second strengthens coupling
Metal layer (9) width is 0.15mm~0.23mm；Wherein：The length of 4th sheet metal is 1.7~2.0mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710312999.7A CN107134614B (en) | 2017-05-05 | 2017-05-05 | A kind of multi-layer ceramics microwave band-pass filter |
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| CN201710312999.7A CN107134614B (en) | 2017-05-05 | 2017-05-05 | A kind of multi-layer ceramics microwave band-pass filter |
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| CN107134614B CN107134614B (en) | 2019-05-21 |
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Cited By (4)
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| WO2020087319A1 (en) * | 2018-10-31 | 2020-05-07 | 深圳市麦捷微电子科技股份有限公司 | Novel multi-layer waveguide bandpass filter having ceramic dielectric substrate |
| CN111585536A (en) * | 2020-06-04 | 2020-08-25 | 武汉凡谷电子技术股份有限公司 | Multilayer filter |
| CN115513617A (en) * | 2022-09-29 | 2022-12-23 | 武汉凡谷电子技术股份有限公司 | Filter |
| US11670828B1 (en) | 2021-04-27 | 2023-06-06 | Rockwell Collins, Inc. | Dielectric and thin film floating metal stacking for embedded tunable filtering of high frequency signals |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020087319A1 (en) * | 2018-10-31 | 2020-05-07 | 深圳市麦捷微电子科技股份有限公司 | Novel multi-layer waveguide bandpass filter having ceramic dielectric substrate |
| CN111585536A (en) * | 2020-06-04 | 2020-08-25 | 武汉凡谷电子技术股份有限公司 | Multilayer filter |
| US11670828B1 (en) | 2021-04-27 | 2023-06-06 | Rockwell Collins, Inc. | Dielectric and thin film floating metal stacking for embedded tunable filtering of high frequency signals |
| CN115513617A (en) * | 2022-09-29 | 2022-12-23 | 武汉凡谷电子技术股份有限公司 | Filter |
| CN115513617B (en) * | 2022-09-29 | 2024-01-02 | 武汉凡谷电子技术股份有限公司 | Filter |
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