CN107134406B - Method for preparing nitride self-supporting substrate - Google Patents
Method for preparing nitride self-supporting substrate Download PDFInfo
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- CN107134406B CN107134406B CN201710316317.XA CN201710316317A CN107134406B CN 107134406 B CN107134406 B CN 107134406B CN 201710316317 A CN201710316317 A CN 201710316317A CN 107134406 B CN107134406 B CN 107134406B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Abstract
A method of making a nitride free-standing substrate comprising the steps of: selecting a sapphire substrate to be processed, wherein the sapphire substrate is formed by splicing at least two processed and shaped sub sapphire substrates; depositing nitride on the sapphire substrate to form a nitride layer; and carrying out laser lift-off to enable laser to enter from the side where the sapphire substrate is located, carrying out overall scanning on the sapphire substrate, and separating each sub-sapphire substrate from the nitride layer in sequence according to the sequence of laser scanning so as to prepare the nitride self-supporting substrate. The invention is beneficial to stress release, greatly reduces the difficulty of the laser lift-off technology, and solves the problem of nitride single crystal layer fragmentation in laser lift-off, thereby obtaining a complete large-size nitride self-supporting substrate.
Description
Technical Field
The invention relates to the field of semiconductor substrate material preparation, in particular to a method for preparing a large-size nitride self-supporting substrate by laser lift-off.
Background
In order to realize the preparation of devices with excellent performance such as high frequency, wide bandwidth, high efficiency, high power and the like, the development of third-generation wide bandgap semiconductor materials represented by gallium nitride is accelerated at the end of the twentieth century. At present, the preparation of large-size gallium nitride self-supporting substrates is one of the biggest obstacles in the advancing path. The preparation process comprises heteroepitaxy of a gallium nitride film on a sapphire substrate, and then separating the gallium nitride film from the sapphire substrate by using a Laser Lift-off Technique (Laser Lift-off Technique) to obtain the self-supporting gallium nitride substrate. Due to the fact that the gallium nitride has large lattice mismatch and thermal expansion mismatch in the process of heteroepitaxy on the sapphire, the gallium nitride film is easy to crack in the laser lift-off process.
Chinese patent CN1779900A adheres the gallium nitride epitaxial layer on the receiving substrate, and prevents the occurrence of gallium nitride fragmentation in the laser stripping process through an external substrate, thereby obtaining a large-area gallium nitride self-supporting substrate; chinese patent CN103839777A adopts a step-scanning mode to scan and irradiate the sapphire substrate with strip-shaped laser spots, and realizes the stripping of a large-area gallium nitride film by adjusting a laser light source; the Chinese patent CN105720141A grows a laser barrier layer between a gallium nitride film and a sapphire substrate, and lays a foundation for preparing a large-size gallium nitride self-supporting substrate by laser lift-off by pre-growing a favorable film layer in the crystal growth process.
Disclosure of Invention
The invention aims to provide a method for preparing a nitride self-supporting substrate, which is beneficial to stress release, greatly reduces the difficulty of a laser lift-off technology and solves the problem of nitride single crystal layer fragmentation in laser lift-off.
In order to solve the technical problems, the invention adopts the following technical scheme:
a method of making a nitride free-standing substrate comprising the steps of:
selecting a sapphire substrate to be processed, wherein the sapphire substrate is formed by splicing at least two processed and shaped sub sapphire substrates;
depositing nitride on the sapphire substrate to form a nitride layer;
and carrying out laser lift-off to enable laser to enter from the side where the sapphire substrate is located, carrying out overall scanning on the sapphire substrate, and separating each sub-sapphire substrate from the nitride layer in sequence according to the sequence of laser scanning so as to prepare the nitride self-supporting substrate.
And after the laser is incident from the side where the sapphire substrate is located, sequentially scanning the laser in a bar shape from left to right.
And after the laser is incident from the side of the sapphire substrate, the laser is sequentially annularly scanned from the outer ring to the inner ring.
The shape of the sub sapphire substrate after being processed and shaped is triangle, quadrangle, polygon or irregular figure.
The areas of the respective sub sapphire substrates are equal or unequal.
And free type splicing without external force constraint is adopted between each sub sapphire substrate forming the sapphire substrate, or adjacent sub sapphire substrates are bonded by glue, or adjacent sub sapphire substrates are spliced by a buckle structure.
The deposition mode that adopts when deposiing the nitride on the sapphire substrate is liquid phase epitaxy and/or vapour phase epitaxy, and wherein vapour phase epitaxy is metal organic matter vapour phase epitaxy, hydride vapour phase epitaxy or molecular beam epitaxy, and it is one or two or three wantonly in metal organic matter vapour phase epitaxy, hydride vapour phase epitaxy and molecular beam epitaxy to adopt vapour phase epitaxy alone.
According to the invention, a plurality of sub sapphire substrates form a large-size sapphire substrate, nitride is deposited on the large-size sapphire substrate, laser is incident on the sapphire substrate, so that the sub sapphire substrates are sequentially separated from the nitride, the nitride is effectively released in the separation process, and no fragmentation or crack is generated all the time, thus the nitride self-supporting substrate is prepared.
Drawings
FIG. 1 is a schematic view of a sapphire substrate according to an embodiment of the present invention;
FIG. 2 is a schematic view of a second embodiment of a sapphire substrate of the present invention;
FIG. 3 is a schematic cross-sectional view of a nitride deposited on a sapphire substrate over a deposition temperature range in accordance with the present invention;
FIG. 4 is a schematic cross-sectional view of the present invention after cooling to room temperature;
FIG. 5 is a schematic diagram of a laser scanning embodiment of the present invention;
FIG. 6 is a schematic diagram of a second embodiment of laser scanning according to the present invention.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
As shown in fig. 1, 3 and 4, the present invention discloses a method for preparing a nitride free-standing substrate,
s1, selecting a sapphire substrate 3 to be processed, wherein the sapphire substrate 3 is formed by splicing at least two sub-sapphire substrates 11 after being processed and shaped, so that a large-size sapphire substrate is formed by at least two sub-sapphire substrates with smaller sizes.
S2, nitride is deposited on the sapphire substrate 3 to form a nitride layer 2. The nitride includes various nitrogen-containing compounds such as gallium nitride, aluminum nitride, and the like. The deposition mode can adopt one or two or three of metal organic gas phase epitaxy, hydride gas phase epitaxy, molecular beam epitaxy and the like, or adopts liquid phase epitaxy, or adopts the combination of liquid phase epitaxy and any one or two or three of the gas phase epitaxy.
And S3, carrying out laser lift-off to enable laser to enter from the side where the sapphire substrate is located, carrying out overall scanning on the sapphire substrate, and separating each sub-sapphire substrate from the nitride layer in sequence according to the sequence of laser scanning so as to prepare the nitride self-supporting substrate.
In addition, the shape of the sub sapphire substrate after being processed and shaped is a triangle, a quadrangle, a polygon or an irregular figure. The areas of the respective sub sapphire substrates are equal or unequal.
And free type splicing without external force constraint is adopted between each sub sapphire substrate forming the sapphire substrate, or adjacent sub sapphire substrates are bonded by glue, or adjacent sub sapphire substrates are spliced by a buckle structure.
In the first embodiment, as shown in fig. 1, the sapphire substrates 11 are square, and in a state where each of the sapphire substrates 11 is not constrained by any external force (no adhesive material is present at the joint interface of the sapphire substrates 3), the sapphire substrates 11 are closely placed on a graphite plate for vapor phase epitaxy, and are joined to form a 6-inch sapphire substrate 3. Gallium nitride 2 is grown to a thickness of 500 microns by Hydride Vapor Phase Epitaxy (HVPE) as shown in fig. 3, wherein the cross-sectional view is taken along line 51 of fig. 1. Then, the temperature is reduced to room temperature for taking the wafer, and the gallium nitride/sapphire composite substrate has bending due to mismatching of the thermal expansion coefficient and the lattice constant, as shown in FIG. 4. As shown in fig. 5, laser 4 is incident from the sapphire side, and laser stripe scanning is performed sequentially from left to right, the square sub-sapphire substrate 11 is sequentially separated from gallium nitride, and gallium nitride 2 is effectively released in the separation process, and no crack or crack occurs all the time, so that a 6-inch gallium nitride self-supporting substrate is prepared.
In the second embodiment, as shown in fig. 2, a gallium nitride buffer layer with a thickness of 3 μm is grown on a sapphire substrate by Metal Organic Chemical Vapor Deposition (MOCVD), and then processed and finished to form a regular hexagonal sapphire substrate 12, and a plurality of square sapphire substrates 12 are placed on a graphite plate for vapor phase epitaxy using an adhesive material, and then spliced to form a 4-inch sapphire substrate 3. Gallium nitride 2 was grown by Molecular Beam Epitaxy (MBE) to a thickness of 300 microns. The cross section of the cross section line 52 in fig. 2 shows that the cross section structure shown in fig. 6 is obtained, the laser 4 is incident from the sapphire side, the laser annular scanning is sequentially carried out from the outer ring to the inner ring, the regular hexagonal sub sapphire substrate 12 is sequentially separated from the gallium nitride 2, the gallium nitride 2 is effectively released in the separation process, and no fragmentation or crack occurs all the time, so that the 6-inch gallium nitride self-supporting substrate is prepared.
Although the present invention has been described in detail with reference to the embodiments, it will be apparent to those skilled in the art that modifications, equivalents, improvements, and the like can be made in the technical solutions of the foregoing embodiments or in some of the technical features of the foregoing embodiments, but those modifications, equivalents, improvements, and the like are all within the spirit and principle of the present invention.
Claims (5)
1. A method of making a nitride free-standing substrate comprising the steps of:
selecting a sapphire substrate to be processed, wherein the sapphire substrate is formed by splicing at least two processed and shaped sub sapphire substrates;
depositing nitride on the sapphire substrate to form a nitride layer;
carrying out laser lift-off to enable laser to enter from the side where the sapphire substrate is located, carrying out overall scanning on the sapphire substrate, and separating each sub-sapphire substrate from the nitride layer in sequence according to the sequence of laser scanning so as to prepare the nitride self-supporting substrate;
after the laser is incident from the side where the sapphire substrate is located, sequentially scanning the laser in a bar shape from left to right; or after the laser is incident from the sapphire substrate side, the laser is sequentially and annularly scanned from the outer ring to the inner ring.
2. The method of claim 1, wherein the shape of the sapphire substrate after shaping is triangular, quadrilateral, polygonal or irregular.
3. The method of producing a nitride self-supporting substrate according to claim 2, wherein the areas of the respective sub-sapphire substrates are equal or unequal.
4. The method for preparing the nitride self-supporting substrate according to claim 3, wherein free splicing without external force constraint is adopted between each sub sapphire substrate forming the sapphire substrate, or glue bonding is adopted between adjacent sub sapphire substrates, or a snap structure splicing is adopted between adjacent sub sapphire substrates.
5. The method for preparing a nitride self-supporting substrate according to claim 4, wherein the deposition method for depositing nitride on the sapphire substrate is liquid phase epitaxy and/or vapor phase epitaxy, wherein the vapor phase epitaxy is metal organic vapor phase epitaxy, hydride vapor phase epitaxy or molecular beam epitaxy, and the vapor phase epitaxy is one or any two or three of metal organic vapor phase epitaxy, hydride vapor phase epitaxy and molecular beam epitaxy.
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| CN201710316317.XA CN107134406B (en) | 2017-05-08 | 2017-05-08 | Method for preparing nitride self-supporting substrate |
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| CN201710316317.XA CN107134406B (en) | 2017-05-08 | 2017-05-08 | Method for preparing nitride self-supporting substrate |
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| CN107134406B true CN107134406B (en) | 2020-06-05 |
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| CN109585269B (en) * | 2018-11-09 | 2020-06-26 | 北京大学 | Method for preparing semiconductor single crystal substrate by using two-dimensional crystal transition layer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1381870A (en) * | 2002-05-31 | 2002-11-27 | 南京大学 | Technology for obtaining large-area high-quality GaN self-supporting substrate |
| CN102005370A (en) * | 2010-10-12 | 2011-04-06 | 北京大学 | Method for preparing homoepitaxy substrate |
| CN102828239A (en) * | 2012-08-24 | 2012-12-19 | 东莞市中镓半导体科技有限公司 | Method for preparing self-supporting substrate from gallium nitride single-crystal materials by self-separating by aid of defect and stress removal technology |
| CN103618034A (en) * | 2013-11-29 | 2014-03-05 | 厦门大学 | Self-supporting vertical structural GaN-based LED chip and preparation method thereof |
| CN105590841A (en) * | 2014-11-14 | 2016-05-18 | 东莞市中镓半导体科技有限公司 | Crack-free laser lift-off method for preparing GaN self-supporting substrate |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1381870A (en) * | 2002-05-31 | 2002-11-27 | 南京大学 | Technology for obtaining large-area high-quality GaN self-supporting substrate |
| CN102005370A (en) * | 2010-10-12 | 2011-04-06 | 北京大学 | Method for preparing homoepitaxy substrate |
| CN102828239A (en) * | 2012-08-24 | 2012-12-19 | 东莞市中镓半导体科技有限公司 | Method for preparing self-supporting substrate from gallium nitride single-crystal materials by self-separating by aid of defect and stress removal technology |
| CN103618034A (en) * | 2013-11-29 | 2014-03-05 | 厦门大学 | Self-supporting vertical structural GaN-based LED chip and preparation method thereof |
| CN105590841A (en) * | 2014-11-14 | 2016-05-18 | 东莞市中镓半导体科技有限公司 | Crack-free laser lift-off method for preparing GaN self-supporting substrate |
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