CN107132732A - 新式镭刻机 - Google Patents

新式镭刻机 Download PDF

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Publication number
CN107132732A
CN107132732A CN201610104102.7A CN201610104102A CN107132732A CN 107132732 A CN107132732 A CN 107132732A CN 201610104102 A CN201610104102 A CN 201610104102A CN 107132732 A CN107132732 A CN 107132732A
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CN
China
Prior art keywords
radium
machine
carves
new
identification system
Prior art date
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Pending
Application number
CN201610104102.7A
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English (en)
Inventor
涂波
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Individual
Original Assignee
Individual
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Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201610104102.7A priority Critical patent/CN107132732A/zh
Publication of CN107132732A publication Critical patent/CN107132732A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving

Abstract

本发明的目的是为了半导体封装及LED封装可以完全实施免焊线封装的正装芯片工艺而设计，新式镭刻机它是由市面原有镭刻机改装设计而成的，主要由镭射激光头、电脑组件、CAD、图像识别系统、可调动X、Y、Z、轴而成的。本发明镭刻机可以对半导体、电子元器件等精密要求高的进行雕刻，设计后的镭刻机3轴工作平台配合图像识别系统镭刻精度能高达0.1um。

Description

新式镭刻机
技术领域
半导体封装及电子元器件的雕刻。
背景技术
现有镭刻机一般为激光头转动，并且调整高度及聚焦以达到X、Y、Z、立体雕刻，但是有很大的局限性，为达到更精密的镭雕功能我们从新设计规划新式镭雕机在原有基础上增加图像识别及自动对准而且用CAD输入法可以校准。
发明内容
本发明的目的是为了半导体封装及LED封装可以完全实施免焊线封装的正装芯片工艺而设计。
使用现有 CAD 软件，键入坐标配合图像识别校准精度 0.1um, 达到精密的雕刻。
在现有的镭刻机工作平台上更换设计可调动的 X 、 Y 、 Z 、工作平台且将固定的工作平台改为伺服马达或线性马达驱动调动精密度达到 0.1um 以便可以确保微米级的线辐。
保留原有雷切机的激光头转动及调整高度聚焦及调整功率的功能。

Claims (2)

1.新式镭刻机它是由市面原有镭刻机改装设计而成的，主要由镭射激光头、电脑组件、CAD、图像识别系统、可调动X、Y、Z、轴而成的。
2.根据权利要求1所述本发明镭刻机可以对半导体、电子元器件等精密要求高的进行雕刻，设计后的镭刻机3轴工作平台配合图像识别系统镭刻精度能高达0.1um 。
CN201610104102.7A 2016-02-26 2016-02-26 新式镭刻机 Pending CN107132732A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610104102.7A CN107132732A (zh) 2016-02-26 2016-02-26 新式镭刻机

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610104102.7A CN107132732A (zh) 2016-02-26 2016-02-26 新式镭刻机

Publications (1)

Publication Number Publication Date
CN107132732A true CN107132732A (zh) 2017-09-05

Family

ID=59721226

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610104102.7A Pending CN107132732A (zh) 2016-02-26 2016-02-26 新式镭刻机

Country Status (1)

Country Link
CN (1) CN107132732A (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002036373A (ja) * 2000-07-25 2002-02-05 Sanyo Electric Co Ltd 光造形装置
JP2003324028A (ja) * 2002-04-30 2003-11-14 Jfe Steel Kk 平面磁気素子の製造方法
CN1991591A (zh) * 2005-12-30 2007-07-04 Asml荷兰有限公司 光刻装置和器件制造方法
CN103144305A (zh) * 2013-02-27 2013-06-12 深圳诚一信科技有限公司 一种3d激光快速成型系统及方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002036373A (ja) * 2000-07-25 2002-02-05 Sanyo Electric Co Ltd 光造形装置
JP2003324028A (ja) * 2002-04-30 2003-11-14 Jfe Steel Kk 平面磁気素子の製造方法
CN1991591A (zh) * 2005-12-30 2007-07-04 Asml荷兰有限公司 光刻装置和器件制造方法
CN103144305A (zh) * 2013-02-27 2013-06-12 深圳诚一信科技有限公司 一种3d激光快速成型系统及方法

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