A kind of superfine nano-crystalline tungsten carbide coating and preparation method thereof
Technical field
The present invention relates to a kind of superfine nano-crystalline tungsten carbide coatings and preparation method thereof, use atmospheric chemical vapor to be a kind of
The superfine nano-crystalline tungsten carbide coating of the method preparation of deposition, prepared superfine nano-crystalline tungsten carbide coating are with high hard
Degree, wear-resistant, corrosion resistance characteristic fine grain stratiform tungsten carbide coating are especially in the presence of the W that partial size is 3~5nm2C is ultra-fine to be received
Meter Jing and amorphous, effectively increase the inter-layer bonding force of layer structure coating, while improving coating hardness.
Background technique
With scientific research and industrial application deeply and development, coating abrasion and corrosion phenomenon under extreme environment
It is more obvious, huge economic loss can be all caused every year.Surface Engineering is to solve the problems, such as that such important means, technique include
Thermal spraying, supersonic flame spraying, physical vapour deposition (PVD) etc., chemical vapour deposition technique therein can be in inner surfaces and complex shape
Preparation binding force is strong on shape matrix, coefficient of friction is low, uniform coating.Tungsten carbide has the property such as hardness is high, corrosion-resistant, wear-resistant
Can, it can be used as the protective coating of equipment component under the conditions of abrasion, corrosion etc. are exceedingly odious, alleviate matrix failure, extension makes
Use the service life.
Chemical vapor carbon deposition tungsten coating carries out under environment under low pressure mostly, because of molecule mean free path when low pressure
Greatly, gained coating is more uniform.But low-pressure chemical vapor deposition process is complicated, equipment performance requirement is very high, and deposition rate
It is relatively slow, difficulty is brought to industrial application.
Aumospheric pressure cvd simple process, it is lower to equipment requirement, and the growth rate of coating is very fast, applies when grasping
After the influence factor and controlling mechanism of layer growth, can be quick by adjusting parameters such as partial pressure, overall flow rate and depositing temperatures
To uniform, fine and close coating.
There are two kinds of microstructures of column crystal and stratiform fine grain, columns for the tungsten carbide coating prepared using chemical vapor deposition
Brilliant tungsten carbide hardness is generally 2000 to 2500kg/mm3Though having good wear-resisting property, adjacent column crystalline substance is intercrystalline
Interstitial area binding force is weaker, and there are cracking is easy when corrosive agent or corrosive media, corrosion resistance is poor;The carbonization of stratiform fine grain
Tungsten coating hardness is 2400 to 3000kg/mm3, good sherardizing steel performance is shown in high and low-angle impacts, but
It is that easily there is a phenomenon where crackings, delamination after coating internal stress causes its thickness to reach to a certain degree, it is difficult to it is preferable to obtain quality
Thick coating.
Summary of the invention
The purpose of the invention is to overcome the deficiencies in the prior art, propose a kind of superfine nano-crystalline tungsten carbide coating and its
Preparation method.
The purpose of the present invention is what is be achieved through the following technical solutions.
A kind of superfine nano-crystalline tungsten carbide coating, the coating include stratiform aplitic texture and through fibrous group of multilayer
It knits, exists simultaneously W and W in stratiform aplitic texture2C crystal grain, there is only W in the bacillar structure of multilayer2C crystal grain, partial size
For 3~5nm, amorphous is existed simultaneously.Presence through the bacillar structure of multilayer improves the Coating combination of stratiform aplitic texture
The microhardness of power and hardness, the coating can achieve 28.8GPa.
A kind of the step of preparation method of superfine nano-crystalline tungsten carbide coating, this method includes:
(1) matrix is placed in chemical vapor deposition reaction chamber, is passed through inert gas with evacuation of air, then passes to hydrogen
Gas simultaneously closes inert gas;
(2) it opens heating device and matrix is heated to 550-600 DEG C, be passed through tungsten hexafluoride and make it in advance and hydrogen
Mixing, tungsten hexafluoride and hydrogen occur reduction reaction and form internal layer tungsten coating on matrix;
(3) it is subsequently passed carbonaceous gas, is chemically reacted between carbonaceous gas, hydrogen and tungsten hexafluoride three, is kept
Carbonaceous gas and tungsten hexafluoride are closed after setting time;
(4) it keeps supply to the matrix of hydrogen to be cooled to 50 DEG C and closes hydrogen hereinafter, opening inert gas, after emptying hydrogen
Sample is taken out, the superfine nano-crystalline tungsten carbide coating for being previously deposited tungsten coating on matrix is obtained.
Inert gas in the step (1) is argon gas or nitrogen;
In the step (2), the molar ratio of tungsten hexafluoride and hydrogen is 1:2-4, preferably 1:3;
In the step (3), carbonaceous gas is dimethyl ether, and tungsten hexafluoride and dimethyl ether molar ratio are 1.6~2.9:1,
Setting time is related with the deposition thickness of superfine nano-crystalline tungsten carbide coating, i.e., the longer obtained coating layer thickness of setting time is more
It is thick.
Beneficial effect
It (1) can be in depositing silicon tungsten coating on the matrix of inner surface and complicated shape using the method for chemical vapor deposition;
(2) requirement and process complexity tested to equipment can be reduced using aumospheric pressure cvd, and reality is effectively reduced
Test cost;
(3) it is previously deposited the binding force that tungsten coating is conducive to improve tungsten carbide coating and matrix;
(4) it deposits to have obtained the tungsten carbide coating of stratiform fine grain as carbon source using dimethyl ether, can avoid column crystal intergranular
The problem of cracking, corrosion resistance reduce;
(5) use lower tungsten hexafluoride/dimethyl ether ratio that can deposit the Ultra-fine Grained W for obtaining partial size as 3~5nm2C crystal grain
And amorphous, the inter-layer bonding force of coating is effectively increased, solving internal stress in stratiform aplitic texture leads to coating cracking, takes off
The problem of layer.
Detailed description of the invention
Fig. 1 is the XRD diagram of tungsten carbide coating prepared by embodiment 1;
Fig. 2 includes that there is the section SEM of the tungsten carbide coating of tungsten internal layer to scheme for the preparation of embodiment 1;
Fig. 3 is the section SEM figure of tungsten carbide coating prepared by embodiment 1;
Fig. 4 is the SAD figure of tungsten carbide coating prepared by embodiment 1;
Fig. 5 is the HRTEM figure of tungsten carbide coating prepared by embodiment 1;
Specific embodiment
Below by example, the invention will be further described, but embodiment is not intended to limit protection scope of the present invention.
Embodiment 1
Copper substrate is placed in chemical vapor deposition reaction chamber, be passed through hydrogen after being passed through argon gas 10min and closes argon gas,
It opens heating device and Copper substrate is heated to 600 DEG C, then pass to tungsten hexafluoride, gas of dimethyl ether, 2h are passed through after 10min
Dimethyl ether and tungsten hexafluoride are closed afterwards, and the supply of hydrogen to Copper substrate is kept to be cooled to 50 DEG C hereinafter, opening argon gas and closing hydrogen
Gas takes out sample after 10min.
Wherein argon flow be 2L/min, hydrogen flowing quantity 1.1L/min, WF6Flow is 5g/min, dimethyl ether flow is
200ml/min。
XRD test is carried out to obtained sample, as shown in Figure 1, as shown in Figure 1, being previously deposited the Copper substrate of tungsten coating
On exist simultaneously W and W in the coating that is deposited2C;
SEM test has been carried out to obtained sample, as shown in Figures 2 and 3, as shown in Figure 2, the tungsten that Copper substrate is previously deposited
Layer is columnar crystal structure, from the figure 3, it may be seen that the coating deposited on tungsten layer has layer structure and bacillar structure, and threadiness
Tissue runs through multilayer laminar aplitic texture;
Selected diffraction is carried out to the bacillar structure in obtained sample coatings, as shown in figure 4, as shown in Figure 4, this spreads out
Penetrating ring is polycrystalline diffraction ring, and all diffraction rings correspond to crystal face and belong to hexagonal structure W2C crystal corresponds to crystal face successively from inside to outside
For (0002),
Bacillar structure in obtained sample coatings is observed using high resolution transmission electron microscopy, is obtained
The high resolution transmission electron microscopy of bacillar structure in coating, as shown in figure 4, as shown in Figure 4, grain size is 3~
5nm additionally, there may be amorphous, this is corresponding with the diffraction peaks broadening phenomenon in XRD diagram, can be with by the measurement to lattice fringe
Determine that crystal grain is W2C crystal illustrates that bacillar structure is the W for being 3~5nm by partial size2C nano crystal grain and amorphous composition;
Using nano-hardness tester and continuous stiffness measurement is used to measure the microhardness of coating as 28.8GPa.
Embodiment 2
Copper substrate is placed in chemical vapor deposition reaction chamber, be passed through hydrogen after being passed through argon gas 10min and closes argon gas,
It opens heating device and matrix is heated to 600 DEG C, be passed through tungsten hexafluoride, gas of dimethyl ether is passed through after 10min, is closed after 1h
Dimethyl ether and tungsten hexafluoride keep the supply of hydrogen to matrix to be cooled to 50 DEG C hereinafter, open argon gas and close hydrogen, 10min
After take out sample, wherein argon flow be 2L/min, hydrogen flowing quantity 1.1L/min, WF6Flow is 5g/min, dimethyl ether flow
For 150ml/min.
Embodiment 3
Copper substrate is placed in chemical vapor deposition reaction chamber, be passed through hydrogen after being passed through argon gas 10min and closes argon gas,
It opens heating device and matrix is heated to 550 DEG C, be passed through tungsten hexafluoride, gas of dimethyl ether is passed through after 10min, is closed after 1h
Dimethyl ether and tungsten hexafluoride keep the supply of hydrogen to matrix to be cooled to 50 DEG C hereinafter, open argon gas and close hydrogen, 10min
After take out sample, wherein argon flow be 2L/min, hydrogen flowing quantity 1.1L/min, WF6Flow is 5g/min, dimethyl ether flow
For 150ml/min.
Embodiment 4
Copper substrate is placed in chemical vapor deposition reaction chamber, be passed through hydrogen after being passed through argon gas 10min and closes argon gas,
It opens heating device and matrix is heated to 600 DEG C, be passed through tungsten hexafluoride, gas of dimethyl ether is passed through after 10min, is closed after 1h
Dimethyl ether and tungsten hexafluoride keep the supply of hydrogen to matrix to be cooled to 50 DEG C hereinafter, open argon gas and close hydrogen, 10min
After take out sample, wherein argon flow be 2L/min, hydrogen flowing quantity 1.1L/min, WF6Flow is 5g/min, dimethyl ether flow
For 175ml/min.
Embodiment 5
Copper substrate is placed in chemical vapor deposition reaction chamber, be passed through hydrogen after being passed through argon gas 10min and closes argon gas,
It opens heating device and matrix is heated to 600 DEG C, be passed through tungsten hexafluoride, gas of dimethyl ether is passed through after 10min, is closed after 1h
Dimethyl ether and tungsten hexafluoride keep the supply of hydrogen to matrix to be cooled to 50 DEG C hereinafter, open argon gas and close hydrogen, 10min
After take out sample, wherein argon flow be 2L/min, hydrogen flowing quantity 1.1L/min, WF6Flow is 5g/min, dimethyl ether flow
For 225ml/min.