CN107130213A - Multicomponent alloy laminated film Preparation equipment and preparation method - Google Patents
Multicomponent alloy laminated film Preparation equipment and preparation method Download PDFInfo
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- CN107130213A CN107130213A CN201710305293.8A CN201710305293A CN107130213A CN 107130213 A CN107130213 A CN 107130213A CN 201710305293 A CN201710305293 A CN 201710305293A CN 107130213 A CN107130213 A CN 107130213A
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- multicomponent alloy
- laminated film
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- 239000000956 alloy Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 49
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 47
- 238000004544 sputter deposition Methods 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 238000001704 evaporation Methods 0.000 claims abstract description 26
- 230000008020 evaporation Effects 0.000 claims abstract description 24
- 230000003028 elevating effect Effects 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 230000007246 mechanism Effects 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002131 composite material Substances 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 230000005672 electromagnetic field Effects 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 4
- 229910000765 intermetallic Inorganic materials 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 29
- 238000005520 cutting process Methods 0.000 abstract description 25
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 23
- 239000011248 coating agent Substances 0.000 abstract description 22
- 238000005516 engineering process Methods 0.000 abstract description 16
- 238000007733 ion plating Methods 0.000 abstract description 15
- 238000007738 vacuum evaporation Methods 0.000 abstract description 6
- 238000004062 sedimentation Methods 0.000 abstract description 2
- 239000002103 nanocoating Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 98
- 239000000463 material Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 239000010409 thin film Substances 0.000 description 13
- 229910010037 TiAlN Inorganic materials 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 239000011651 chromium Substances 0.000 description 10
- 229910052718 tin Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 6
- 238000003754 machining Methods 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052774 Proactinium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910017150 AlTi Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910010038 TiAl Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 244000144985 peep Species 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000011573 trace mineral Substances 0.000 description 3
- 235000013619 trace mineral Nutrition 0.000 description 3
- QFUKUPZJJSMEGE-UHFFFAOYSA-N 5-(hydroxymethyl)-1-(3-methylbutyl)pyrrole-2-carbaldehyde Chemical compound CC(C)CCN1C(CO)=CC=C1C=O QFUKUPZJJSMEGE-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- -1 compound compound Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000009183 running Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
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- 238000005728 strengthening Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/347—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with layers adapted for cutting tools or wear applications
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention discloses a kind of multicomponent alloy laminated film Preparation equipment and preparation method, especially a kind of multicomponent alloy laminated film Preparation equipment and preparation method for being related to nano coating technical field.The present invention provides a kind of multicomponent alloy laminated film Preparation equipment for the cutting tool combination property for being remarkably improved institute's plated film, including heating system, air supply system, cooling system, vacuum system, vacuum chamber, luggage carrier, elevating mechanism, crucible evaporation source, controlled sputtering source, cathode arc source and electric control system.The equipment of the application can realize the group technology of cathodic arc ion plating and magnetron sputtering, and the binary evaporation source technique that vacuum evaporation coating is combined with magnetron sputtering, carry out the preparation of multicomponent alloy laminated film, accurately control the institutional framework of all kinds of films, so as to obtain the comprehensive excellent multi-element film such as high hardness, low internal stress, high adhesion, low roughness, good wearability, and with high sedimentation rate in preparation process.
Description
Technical field
It is related to nanometer the present invention relates to a kind of multicomponent alloy laminated film Preparation equipment and preparation method, especially one kind to apply
The multicomponent alloy laminated film Preparation equipment and preparation method of layer technical field.
Background technology
Manufacturing development be unable to do without cutting tool, and modern cutting tools have become the pass of lifting manufacturing industry technical merit
One of key factor.At a high speed, efficiently, intelligence and environmental protection as machining pursue target, high intensity, high-toughness material and height
Updating for the difficult-to-machine material performance such as temperature alloy, titanium alloy, requirements at the higher level are proposed to cutting tool.Modern cutting technology
It is related to ambit extensively, wherein tool surface is modified the modern cutting technology that (coating) technology is in response to the market demand and grown up
One of.It is widely used to the industries such as Aero-Space, automobile, the energy, ship, generating at present, it has also become manufacturing crucial skill
One of art.
Cutting tool is except that should have a good ambient temperature mechanical properties, such as intensity, toughness, outside hardness, for high-speed cutting,
For dry cutting, hard machining etc., should also possess excellent hot property, such as anti-chemical affinity, diffusion, dissolving, thermal shock resistance properties,
Mechanical behavior under high temperature etc..
Coating is as one kind of modern cutting tools process for modifying surface, and it is by method chemically or physically in cutter table
Micro-, nano level film is obtained on face, and with the features such as hardness is high, lubricity is good, high-temperature behavior is excellent.Table is carried out to cutter
Finishing coat processing, is important channel and the means for improving cutting tool combination property, can tool life, raising processing
Efficiency and machining accuracy, contribute to high-speed cutting, dry cutting, hard machining, the realization of precision cutting process.
During High-speed machining or DRY CUTTING, cutting temperature turns into the main original of influence coated cutting tool service life
Cause, therefore improve the high-temperature behavior of film, ensure that the red hardness of coated cutting tool turns into PVD (Physical Vapor in recent years
Deposition) the exploitation focus of technology.The content for improving Al in TiAlN films is to improve the effective method of coating performance
One of, with the increase of Al content, the hardness and high-temperature behavior of film are all being improved, but bring therewith is stress in thin films
Increase, the decline of toughness and the increase with iron-based material compatibility, so as to cause the generation of built-up edge.Therefore in practical application
In, the combination property of such coated cutting tool does not obtain the change of essence.From the point of view of the latest development, development multicomponent alloy is answered
It is very necessary to close thin film technique.The Basic Ways of ganoine thin film improved combination properties are the diversification of thin film composition, profit
The characteristics of with different elements each, realize that the matched well of integrated performance index is always polynary, the main think of of superhard film development
One of road.Solved by changing thin-film material composition at a high speed, high-temperature machining processing problems, such as routine TiN, TiAlN,
Cr and Y is added in AlCrN can improve inoxidizability；Abrasion resistance can be improved by adding Zr, V, B and Hf；Hardness can be improved by adding Si
With anti-chemical diffusivity.
Technology the most frequently used PVD can be divided into three major types：Vacuum evaporation coating VE (Vacuum Evaporating), magnetic control splash
Penetrate MS (Magnetron Sputtering), cathodic arc ion plating AIP (Arc Ion Plating).
In vacuum evaporation coating evaporation process, evaporation rate and its influence factor of membrane material etc. and the close phase of its saturated vapour pressure
Close.Therefore it is evaporated in vacuo coating technology to be restricted by material character, the evaporation for alloy material can cause the segregation of composition.
Magnetron sputtering technique is compared with cathodic arc ion plating technology, and deposition efficiency is relatively low, and the ionization level of atom also compares
Low, stress present in the Thin Film Tissue of preparation is also larger, and magnetron sputtering around plating property and adhesion it is poor.
Cathodic arc ion plating, in membrane-film preparation process, some metallic particles, the big molten drop produced by cathode arc source is easy
The surface of film is pressed from both sides in the film or deposited to, the compactness of film on the one hand can be influenceed, the service life of film is reduced, it is another
Aspect can cause film surface coarse；Thin film composition is relatively single.
Therefore, the single equipment technology of prior art is difficult to meet a variety of requirements, its bad adaptability, prepared film
Combination property is not high, it is impossible to realize the preparation of the multicomponent alloy laminated film of high-quality.
The content of the invention
It is comprehensive that the technical problems to be solved by the invention are to provide a kind of cutting tool that can significantly improve institute's plated film
The multicomponent alloy laminated film Preparation equipment of energy.
The present invention solves the multicomponent alloy laminated film Preparation equipment that its technical problem is used, including heating system, confession
Gas system, cooling system, vacuum system, vacuum chamber, luggage carrier, elevating mechanism, crucible evaporation source, controlled sputtering source, negative electrode electricity
Arc source, electromagnetic field generator and electric control system, the vacuum system and vacuum chamber, the elevating mechanism and loading
Frame is connected, the air supply system and vacuum chamber, the electric control system and crucible evaporation source, controlled sputtering source,
Cathode arc source, electromagnetic field generator, heating system electrical connection, the crucible evaporation source, controlled sputtering source, cathode arc source
In vacuum chamber, the target-substrate distance of the cathode arc source is 160mm to 230mm, and the target-substrate distance of the controlled sputtering source is
50mm to 75mm.
It is further, in addition to heated filament ion gun that the heated filament ion gun is set in a vacuum chamber, the heated filament ion
Source is electrically connected with electric control system.
It is further that the electric control system includes ion source current, argon-arc plasma field and maintains power supply, sputtering source electricity
Source, cathode arc power supply, grid bias power supply, the argon-arc plasma field maintain power supply and ion source current to be connected with heated filament ion gun, institute
State sputtering source current to be connected with controlled sputtering source, the cathode arc power supply is connected with cathode arc source.
It is further that the heating system is including the heating system inside the electron beam in the middle part of vacuum chamber and positioned at true
The external radiation heating system of empty room furnace wall surrounding.
It is further that the controlled sputtering source is symmetrically distributed in the inwall of vacuum chamber, and the cathode arc source is with vacuum
The centre of gyration of room is symmetry axis, and the inwall of vacuum chamber is distributed in the shape of a spiral.
Further that the vacuum system includes molecular pump, lobe pump, mechanical pump, maintains pump, the molecular pump with it is true
Empty room is connected, and the maintenance pump is connected with the exhaust outlet that molecular pump is connected, the exhaust outlet connection of the lobe pump and molecular pump, institute
The exhaust outlet for stating mechanical pump and lobe pump is connected.
It is further, in addition to protective case, the protective case is installed in side of the cathode arc source towards luggage carrier, institute
State side of the protective case away from cathode arc source and be additionally provided with baffle plate.
It is comprehensive that another technical problem solved by the invention is to provide a kind of cutting tool that can significantly improve institute's plated film
Close method prepared by the multicomponent alloy laminated film of performance.
The present invention solves the preparation method for the multicomponent alloy laminated film that its technical problem is used, and utilizes cathode arc source
While carrying out multicomponent alloy material ions deposition, single metallic elements are mixed using controlled sputtering source, multicomponent alloy is formed and is combined
Film layer.
It is further, by crucible evaporation source evaporated metal element, to deposit to form metallic compound in workpiece surface
Other elements are implanted into by controlled sputtering source simultaneously, in workpiece surface formation multicomponent alloy laminated film.
The beneficial effects of the invention are as follows：It can realize that AIP is (cloudy using the multicomponent alloy laminated film Preparation equipment of the application
Pole electrical arc ion plating) with MS (magnetron sputtering) group technology, and VE (vacuum evaporation coating) and MS (magnetic controlled sputtering ion plating)
The binary evaporation source technique being combined, carries out the preparation of multicomponent alloy laminated film, flexibly realizes the in good time change of coating composition,
The institutional framework of all kinds of films is accurately controlled, by while AIP ion depositions, mixing single metallic elements, significantly improving thin
The performance of film, so as to obtain high rigidity, the combination property such as low internal stress, high-bond, low roughness, good wearability is excellent
Different multiple elements design film, and with very high sedimentation rate in preparation process.
Brief description of the drawings
Fig. 1 is the general assembly drawing of the application；
Fig. 2 is the structural representation of the vacuum chamber of the application；
Fig. 3 is the plane outspread drawing of vacuum chamber；
Fig. 4 is the structural representation of heated filament ion gun；
Fig. 5 is the structural representation of luggage carrier；
Fig. 6 is the XRD spectrum of the AlCrN films prepared using single cathode arc；
Fig. 7 is the equipment using the present invention, and the XRD spectrum of AlCrN films is prepared using AMS techniques；
Fig. 8 is the hardness image of the AlCrN films prepared using single cathode arc；
Fig. 9 is the equipment using the present invention, and the hardness image of AlCrN films is prepared using AMS techniques；
Figure 10 is the XRD spectrum of the TiAlN films prepared using single cathode arc；
Figure 11 is the equipment using the present invention, using AMS techniques by addition element, adjusts Al67Ti33After N structures
The XRD spectrum of TiAlN films；
Figure 12 is the hardness image of the TiAlN films prepared using single cathode arc；
Figure 13 is the equipment using the present invention, using AMS techniques by addition element, adjusts Al67Ti33After N structures
The hardness image of TiAlN films；
Figure 14 is the voice signal figure of the slight crack experiment of the AlCrN films prepared using prior art；
Figure 15 is used while AIP carries out AlCrN compound depositions for the present invention, is just passed through MS and is implanted into simple substance elements Mo
The voice signal figure of the slight crack experiment of obtained film；
Figure 16 is the structural representation of cathode arc source of the present invention；
Figure 17 is individually using film microstructure figure made from AIP；
Figure 18 is film microstructure figure prepared by being implanted into Me elements using MS simultaneously using AIP.
Main parts size and numbering in figure：Loading vehicle motor 1, carrier 2, luggage carrier 3, vacuum chamber support 4, elevating screw
5th, coil 6, peep hole 7, cathode arc source 8, controlled sputtering source 9, heated filament ion gun 10, gas flow interface 11, vacuum cavity
12nd, high vacuum valve 13, molecular pump 14, forevacuum valve 15, pre- take out valve 16, by-passing valve 17, lobe pump 18, maintain pump 19, machinery
Pump 20, vacuum system support 21, impressed current anode 22, crucible evaporation source 23, base material 24, protective case 25, baffle plate 26, workpiece 27, in
Interbed 28, AlCrMeN compositions 29, MeNx compositions 30, AlCrN compositions 31.
Embodiment
The invention will be further described below in conjunction with the accompanying drawings.
As shown in Figures 1 and 2, multicomponent alloy laminated film Preparation equipment of the invention, including heating system, supply system
System, cooling system, vacuum system, vacuum chamber, luggage carrier 3, elevating mechanism, crucible evaporation source 23, controlled sputtering source 9, negative electrode electricity
Arc source (i.e. CAE sources), electromagnetic field generator and electric control system, the vacuum acquiring system and vacuum chamber, it is described
Elevating mechanism is connected with luggage carrier 3, the air supply system and vacuum chamber, and the electric control system is evaporated with crucible
Source 23, controlled sputtering source 9, cathode arc source 8, electromagnetic field generator, heating system electrical connection, the crucible evaporation source 23,
Controlled sputtering source 9, cathode arc source 8 are located in vacuum chamber, and the target-substrate distance of the cathode arc source 8 is 160mm to 230mm, institute
The target-substrate distance for stating controlled sputtering source 9 is 50mm to 75mm.
Vacuum chamber is evacuated by vacuum system, forms vacuum cavity 12, makes the preparation process of multicomponent alloy laminated film,
Completed in the vacuum environment for meeting preparation technology standard.As shown in figure 5, wherein luggage carrier 3 needs the knife of plated film for fixation
Has and realizes the two dimensional surface motion of cutter, elevating mechanism is used for moving luggage carrier 3.The wherein two dimensional surface motion of luggage carrier 3
Elevating movement with elevating mechanism can be by the way of mechanically wide variety of worm drive.Specific implementation is to add
Load vehicle motor 1, carrier 2, elevating mechanism use elevating screw 5, and provide the vacuum chamber support 4 of support vacuum chambers,
Coil 6 is additionally provided with above vacuum chamber.
Crucible evaporation source 23 is used in membrane-film preparation process the coating for completing composite Ti N, CrN, ZrN, and as auxiliary from
The reception anode in change source, realizes that gas ion etches purpose.And crucible evaporation source 23 can be played by evaporating to vacuum chamber
Cleaning effect, its operating cost is low, diffractive good, the uniformity continuously worked can be ensured, particularly with non-conductive film
Prepare for a long time particularly critical.
Cathode arc source 8 is used in multicomponent alloy laminated film preparation process, is deposited with cathodic arc ion plating (AIP)
Based on technique and for the technical process for the addition for carrying out the polynary element of multicomponent alloy material.
Controlled sputtering source 9 is used in the implantation technique of multicomponent alloy laminated film preparation process trace element.
Heating system is used to heat vacuum chamber in multicomponent alloy laminated film preparation process, to maintain polynary conjunction
The environment temperature of stabilization required for golden composite film preparation technology.
Cooling system is used for the requirement for meeting cooling technique in multicomponent alloy laminated film preparation process, and vacuum chamber is carried out
Timely and effectively cool down.
Air supply system is mainly used in into vacuum chamber being passed through Ar, N2、H2、O2Deng gas, and the amount of the gas to being passed through is carried out
Accurate regulation and control.The application is preferred to use six road mass flow control systems, and maximum stream flow is 300~1000sccm.
The electromagnetic field generator of this equipment, for producing variable electromagnetic, makes the drive in electric arc arc spot variable electromagnetic
Under dynamic, not only along target surface annulus fast run, and radially move back and forth so that arc spot run faster, it is more；
(under the driving of variable magnetic field, arc spot translational speed can be made compared to not using raising more than 30%, the number of arc spot during variable magnetic field
Amount, which is compared not use, improves more than 30% during variable magnetic field) in addition, the plasma produced near evaporation material surface, passes through
Variable electromagnetic can be pushed to coating film area (distance can be more than 300mm), greatly strengthen the plasma density in vacuum chamber,
The environment and condition of reactive ion plated film are improved, so as to significantly improve reactive ion coating quality.
It can realize following coating process to strengthen by plated film using the multicomponent alloy laminated film Preparation equipment of the application
The combination property of workpiece 27：
In the prior art employed in film preparation be vacuum evaporation coating, magnetron sputtering, cathodic arc ion plating its
A kind of middle monotechnics, or bottom film is made first with cathodic arc ion plating, recycle magnetron sputtering to do top film,
The method that i.e. cathodic arc ion plating and magnetron sputtering are carried out respectively.There is no phase using the material between the above method each film
Mutually fusion, but layered coverage, on the surface of workpiece 27, the performance of each layer is single, it is impossible to fully realize to various material excellent properties
Comprehensive utilization, make the combination property of final obtained film relatively low.
And the equipment of the present invention, in a vacuum chamber will be to cathode arc source 8, controlled sputtering source 9 is combined, and to its space bit
Put and optimize arrangement, the target-substrate distance for making cathode arc source 8 is 160mm to 230mm, and the target-substrate distance of controlled sputtering source 9 is 50mm
To 75mm.Wherein target-substrate distance refer to cathode arc source 8 or the grade target source of controlled sputtering source 9 to the surface of workpiece 27 to be coated away from
From.So cathodic arc ion plating and magnetron sputtering can be realized using the equipment of the present invention while the technique carried out, enters in AIP
While row deposition, trace element is implanted into by MS, final obtained film has closely been merged a variety of alloys within the same layer
Material and single metallic elements, the performance of film are further improved by the incorporation of single metallic elements, so that using foregoing side
Legal system obtains film while having high rigidity, low internal stress, high-bond, low roughness, the performance of high-wearing feature, and with very
High deposition.
Based on being deposited using the equipment of the application with AIP, using multicomponent alloy material means, pass through cathode arc source 8
(CAE) synthesis of polynary element thin film, is realized；The implantation of trace element then uses MS technical schemes (AIP and MS combination abbreviation
AMS), relative components content is less than 1%.The accurate control to film phase structure can be realized, can be reached most preferably with obtaining
Mechanical property film phase structure.Figure 17 is when Me target currents are 0A, i.e., merely using film knot made from AIP methods
Bottom is base material 24 in structure, figure, be close to base material 24 be intermediate layer 28 against intermediate layer 28 be AlCrN compositions 31.Figure 18 is
When Me target currents are improved, i.e., obtained membrane structure when being implanted into Me elements using MS, the characteristics of it obtains film is：It is short
Column structure form.Bottom is base material 24 in figure, be close to base material 24 be intermediate layer 28 against intermediate layer 28 be AlCrMeN into
Divide 29 and MeNx compositions 30.It can be seen that coating is with typical post when Me target currents are 0A by Figure 17 and Figure 18 contrast
Shape crystalline form state grows, when Me target currents are improved, and a part of Me atoms enter MeNx crystal lattice and replace Cr atoms, and coating is played
Solution strengthening effect, another part Me formation Me is present forms tiny MeNx crystal grain suppression AlCrN crystal with AlCrN intergranulars
Further growth, plays invigoration effect.
The binary evaporation source that vacuum evaporation coating is combined with magnetic controlled sputtering ion plating can be realized using the equipment of the present invention
Technology；I.e. by crucible evaporation source evaporated metal element, while workpiece surface deposits to form metallic compound, pass through
Controlled sputtering source is implanted into other elements, can be in N during specific implementation in workpiece surface formation multicomponent alloy laminated film2With Ar's
Under mixed atmosphere, Ti elements are evaporated by electron beam evaporation source 23, traditional TiAlN thin film is formed, the same of TiN film is formed in deposition
When by controlled sputtering source 9 be implanted into X element, be coated with (Ti on tool and mould surfaceX, Me1-X) N layers；The X is in Al, Cr, Si
It is at least one.Because TiN is a kind of ideal thin film system, there are extensive preparation basis, such as AIP, MS, VE method
Industrialization production requirements can all be met.TiN has excellent physics, chemical property, as hardness is high, coefficient of friction is low, it is good
Chemical compatibility etc., is the desired coating material of slow cutting process tool, and it can mitigate cutting edge portion and processed material
Adhesion, increase cutting-tool's used life and raising processing efficiency, are still at present using one of more thin-film material.But it is traditional
TiN hardness is relatively low, wearability is short of, heat endurance is poor, limits its and widely applies.The improvement of TiAlN thin film is main
It is embodied in new TiN based alloys and multiple elements design layer aspect.In addition, the binary nitride of magnesium-yttrium-transition metal, carbide are often
It can each other dissolve each other, by adding some elements into TiN film, nitride type compound compound can be formed, and then can be from basic
The upper performance for changing TiAlN thin film, improves its abrasion resistance and heat endurance.Using TiN as base, it is multi-element alloyed change control it is thin
The phase structure of film, obtains so-called (TiX, Me1-X) N membrane systems.Polynary element can relate to C, Si, Cr, Al, Mo, W, V, Zr, Y,
La etc..
Using the equipment of the application with AIP deposit based on can realize the preparation of insulation oxide film.Although AIP is helped
In the generation of ionization, the deposition of its plated film is higher, but in O2When excessive or original electric field changes, O2It is easier in the moon
Reacted on the target surface of pole, oxide is generated, so as to cause the failure of cathodic discharge, it is impossible to the element required for normal output.
Current PVD oxide is mainly aluminum oxide, and Al, AlTi material are relative to be more easy to and O2React, therefore conventional way exists
The Cr of certain content is added in Al materials, the oxidation of target surface can be effectively prevented, but chromium oxide stability is relatively poor, can cause
The change of film performance.Although therefore prior art thinks that AIP depositions are high, the insulation for meeting and requiring can not be prepared with it
Sull.And the variable electromagnetic for using the device, method of the application to be produced by control system and electromagnetic field generator,
It can guide and drive O2Moved towards the direction of workpiece 27 of plated film, so as to away from target body, effectively prevent O2On cathode target surface
React, generate oxide, prepare high performance sull, overcoming can not be prepared using AIP in the prior art
The technology prejudice of insulation oxide.
As shown in figure 4, also including heated filament ion gun, the heated filament ion gun is set in a vacuum chamber, the heated filament ion
Source is electrically connected with electric control system.The heated filament ion gun that the application is set up can significantly increase gas etching effect.For knife
Have for coating, vacuum etching, activation are most important.Give up traditional CAE metals height bias using the equipment of the present invention to bang
Blow mode, and use gas ion low bias etching method, can be more uniformly distributed, overall clean effect, and be ensured
The integrality of cutting edge.In addition the heated filament ion gun that the application is set up can also play internal heating, increase ionization intensity, auxiliary
The effect of deposition is helped, plays a part of increasing plasma when being individually evaporated ion plating.
The electric control system includes ion source current, plasma and maintains power supply, sputtering source current, cathode arc electricity
Source, grid bias power supply, the argon-arc plasma field maintain power supply and ion source current be connecteds with heated filament ion gun, it is described sputter source current and
Controlled sputtering source 9 is connected, and the cathode arc power supply is connected with cathode arc source 8, grid bias power supply and workpiece to be plated 27 during work
Connection.Wherein ion source current be heated filament ion gun by power supply, plasma maintains the offer arc that power supply is heated filament ion gun
Power supply, sputtering source current be controlled sputtering source 9 by power supply, cathode arc power supply is that cathode arc source 8 provides power supply.Bias plasma
Source provides the electric field of control charged ion motion.Electric control system is mainly that the electric component of this equipment provides corresponding parameter
Adjustable power supply, wherein the parameter such as voltage and electric current of each foregoing power supply can use existing electric-controlled according to technological requirement
Technology processed is controlled regulation, makes this equipment by controlling the parameter of each power supply to control technical process, to power parameter
Adjustment can be realized using hardware circuit, it would however also be possible to employ the mode that software and hardware is combined.
The heating system is including the heating system inside the electron beam in the middle part of vacuum chamber and positioned at vacuum chamber furnace wall four
The external radiation heating system in week.The structure that the application is combined using interior external heat makes the globality of heating more perfect, and
And in AMS system runnings, can effectively maintain the uniformity in temperature field, meet depositing operation requirement.Specific implementation is this
Equipment using heated filament ion gun as internal heat, then on the basis of heated filament ion source heating, increase external radiation heating
System.
As shown in figure 3, the controlled sputtering source 9 is symmetrically distributed in the inwall of vacuum chamber, the cathode arc source 8 is with vacuum
The centre of gyration of room is symmetry axis, and the inwall of vacuum chamber is distributed in the shape of a spiral.Using Spiral distribution scheme, sky is made full use of
Between, the target source of such cathode arc can increase to more than eight, significantly enhance adjustment and control of this equipment to film composition
Ability, producing this equipment, composition is more complicated, the more excellent film of combination property.
The vacuum system, which includes the vacuum system, includes molecular pump 14, lobe pump 18, mechanical pump 20, maintenance pump 19,
The molecular pump 14 and vacuum chamber, the exhaust outlet that the maintenance pump 19 is connected with molecular pump 14 are connected, the lobe pump 18
It is connected with the exhaust outlet of molecular pump 14, the mechanical pump 20 is connected with the exhaust outlet of lobe pump 18.May be used also on vacuum system pipeline
Forevacuum valve 15 is set, valve 16, by-passing valve 17 is taken out in advance.The limiting pressure of vacuum chamber, work pressure are wherein determined with molecular pump 14
Power, the pumpdown time of high vacuum plates the stability of film pressure, it is desirable to which it does not return oil, no switching on and shutting down non-cutting time.Mechanical pump 20 is used
In vacuum chamber being extracted into the pressure value that meets the air inlet of molecular pump 14, exhaust outlet.Which determine the pumpdown time of low vacuum.Maintain
Pump 19 is used to maintain the pressure at expulsion of the exhaust outlet of molecular pump 14, vacuum chamber main pump in opening is also run well work, dimension
Hold pump 19 and can select sliding vane rotary pump.Vacuum system is fixedly mounted on vacuum system support 21.
Peep hole 7 is provided with the vacuum chamber.Setting up peep hole 7 is easy to operating personnel to understand vacuum chamber inside information in real time
Condition.Gas flow interface 11 is additionally provided with vacuum chamber, to be passed through associated gas in the course of the work.
As shown in figure 16, in addition to protective case 25, the protective case 25 is arranged on cathode arc source 8 towards luggage carrier (3)
Side, the side of the protective case 25 away from cathode arc source 8 is additionally provided with baffle plate 26.Although AIP contributes to the hair of ionization
Raw, the deposition of its plated film is higher, but in O2When excessive or original electric field changes, O2It is easier to send out on cathode target surface
Raw reaction, generates oxide, so as to cause the failure of cathodic discharge, it is impossible to the element required for normal output.Current PVD oxygen
Compound is mainly aluminum oxide, and Al, AlTi material are relative to be more easy to and O2React, therefore conventional way is added in Al materials
The Cr of certain content, can effectively prevent the oxidation of target surface, but chromium oxide stability is relatively poor, can cause changing for film performance
Become.Although therefore prior art thinks that AIP depositions are high, the sull for meeting and requiring can not be prepared with it.This Shen
Target surface please effectively be protected using aforementioned structure, prevent O2Into cathode target surface, it is possible to which guiding is flowed through around target surface
O2, moved towards the direction of film-coating workpiece 27, so as to away from target surface, effectively prevent O2Reacted on cathode target surface, generate institute
The oxide of meaning, prepares high performance sull, and the skill of oxide can not be prepared using AIP in the prior art by overcoming
Art prejudice.
Temperature measuring equipment and vacuum measuring device are provided with the vacuum chamber.By the temperature measuring equipment set up and
Vacuum measuring device, can measure the temperature and vacuum in vacuum chamber, to enter in coating process to both the above parameter
The accurate control of row.
The cooling system is multichannel water circulation type cooling system.Using multichannel water circulation type cooling system, cooling effect
It is good, it is possible to save resource and cost.
The method of the multicomponent alloy laminated film of the present invention, carries out multicomponent alloy material ions using cathode arc source 8 and sinks
While product, single metallic elements are mixed using controlled sputtering source 9, multicomponent alloy composite film layer is formed.Due in the prior art
Coating process uses the technique that cathodic arc ion plating or magnetron sputtering are carried out respectively, therefore can not effectively combine two kinds of techniques
Advantage, prevent obtained film from being provided simultaneously with a variety of excellent performances.And the application carried out with cathode arc source 8 it is polynary
While alloy material ion deposition, single metallic elements are mixed using controlled sputtering source 9, multicomponent alloy composite film layer is formed,
The metallurgical structure of film so can be accurately controlled, according to using needing the performance to film coating to optimize adjustment,
And higher deposition can be ensured in preparation process, so that performance is higher compared with prior art for obtained film.
The technical process of multicomponent alloy laminated film is prepared using the multicomponent alloy laminated film Preparation equipment of the present invention：
A, AIP and MS
(1) pre-treatment：
Before plated film, cutter is dried after being cleaned through conventional alkalescent cleaning agent and absolute alcohol ultrasonic wave, is placed in coating chamber；
(2) preparation before coating：
1. vacuum chamber is inflated, and opens fire door；
2. electric arc, sputter target material are changed as needed, change sight glass；
3. each position of body of heater, pressure 0.6MPa are cleaned with high pressure air rifle；
4. appropriate fixture is selected, loads workpiece 27 (cutter), confirms that clamp movement is reliably errorless；
5. heated filament ion gun, cathode arc source 8, controlled sputtering source, impressed current anode 22, the insulation shape of the fixture of workpiece 27 are confirmed
Condition, its resistance should be greater than 100K Ω；
6. close deposited chamber, close vent valve.
(3) vacuumize (to 5 × 10-2Pa) and preheating
1. handpiece Water Chilling Units are started；
2. mechanical pump (20), lobe pump (18), opening take out valve 16 in advance；
3. start compound vacuum gauge, open thermocouple rule 1, test fore line vacuum, vacuum is less than 5Pa
4. molecular pump 14 is started；
5. when molecular pump 14 enters normal operating conditions, and vacuum degree in vacuum chamber meets and is less than after 5Pa, and closing takes out valve in advance
16th, step valve 15, high vacuum valve 13 before opening；
6. when vacuum values are less than 5 × 10-2During Pa, 40~60sccm Ar gas is sent into, and opens auxiliary heating (5KW)；
7. open workpiece 27 to rotate, frequency modulation 15Hz；
8. the composite heating stage is prepared to enter into after 40min.
(4) electron beam is heated
1. pressure in vacuum tank is adjusted to 2.5 × 10-190~120sccm of Pa, Ar throughput；
2. heated filament ion source current is opened, the slow electric current that rises is to 170~230A；
3. open field supply and be adjusted to 12~20A；
4. open argon-arc plasma field and maintain power supply, switch goes to heating gear；
5. electric arc is caused, electric current is gradually added in 180A；
6. 40~70min of composite heating period.
(5) gas plasma is etched
1. heater current maintains 170~230A；
2. argon-arc plasma field maintains source current to reduce to 100~120A；
3. field supply reduces to 6~8A；
4. pressure in vacuum tank is adjusted to 2 × 10-1Pa, Ar throughput 50~65sccm, H212~20sccm of throughput；
5. breakdown grid bias power supply, gradually powers up and is depressed into 0~200V of DC voltage, 300~500V of pulse voltage；
6. the ion etching period is about 80~150min.
(6) coating
1. Ti, Cr, Zr layers：Nitrogen (Ar) 80~140sccm of flow, bias is adjusted to 800~1000V, opens 2 negative electrode electricity
Arc source 8 (Ti, Cr, Zr), arc 70~100A of target current, 180~600sec of cycle；
2. TiN, CrN, ZrN layers：480~680sccm of nitrogen flow, bias is adjusted to 150V, opens 2 cathode arc sources 8
Source (Ti, Cr, Zr), arc 100~120A of target current, 180~600sec of cycle；
3. TiAl layers：540~900sccm of nitrogen flow, bias is adjusted to 100~120V, opens 4 cathode arc sources 8
(TiAl), 100~120A of arc target current, 3600~7200sec of cycle；
4. 2 controlled sputtering sources 9,1~3A of sputtering current, 3600~7200sec of cycle are opened：Nitrogen flow 540~
900sccm, bias is adjusted to 80~100V；
5. close 4 sources of cathode arc source 8 (TiAl), open (2) individual cathode arc source 8 (AlTi), arc target current 100~
120A, 1800~3600sec of cycle, nitrogen flow 540~900sccm, O230~100sccm of flow；
6. cathode arc, magnetic controlled sputtering target source, grid bias power supply are closed；
7. heating source, N are closed2、O2Source, the closing startup power supply of molecular pump 14, open and maintain pump (19)；Send nitrogen 80~
120sccm；
8. argon gas is sent to 30Pa；
(7) cool down：60~120min of process time.
B, VE and MS
(1) pre-treatment：
Before plated film, high-speed steel or hard alloy cutter (without special polishing) are through conventional alkalescent cleaning agent and anhydrous
Dry, be placed in coating chamber after the cleaning of alcohol ultrasonic wave；
(2) equipment inspection：
1. vacuum chamber is inflated, and opens fire door；
2. sputter target material is changed as needed, changes sight glass；
3. vapor deposition source return, and add new 20~30g of evaporation material (Ti)；
4. each position of body of heater, pressure 0.6MPa are cleaned with high pressure air rifle；
5. appropriate fixture is selected, loads workpiece 27 (cutter), confirms that clamp movement is reliably errorless；
6. electron gun, evaporation source 23, sputtering source, impressed current anode 22, the insulation status of the fixture of workpiece 27 are confirmed, its resistance should
More than 100K Ω；
7. chassis is risen, deposited chamber is closed, closes vent valve.
(3) vacuumize and preheat
1. handpiece Water Chilling Units are started；
2. mechanical pump (20), lobe pump (18), opening take out valve 16 in advance；
3. start compound vacuum gauge, open thermocouple rule 1, test fore line vacuum, vacuum is less than 5Pa
4. molecular pump 14 is started；
5. when molecular pump 14 enters normal operating conditions, and vacuum degree in vacuum chamber meets and is less than after 5Pa, and closing takes out valve in advance
16th, step valve, high vacuum valve 13 before opening；
6. when vacuum values are less than 1 × 10-1During Pa, the Ar gas for the 40~60sccm that makes a gift to someone, and open auxiliary heating；
7. open workpiece 27 to rotate, frequency modulation 20Hz；
8. the composite heating stage is prepared to enter into after 40min.
(4) electron beam is heated
1. pressure in vacuum tank is adjusted to 2.5 × 10-190~110sccm of Pa, Ar throughput；
2. heated filament ion source current is opened, the slow electric current that rises is to 170~230A；
3. open field supply and be adjusted to 12~20A；
4. open argon-arc plasma field and maintain power supply, switch goes to heating gear；
5. electric arc is caused, electric current is gradually added in 180A；
6. 40~100min of composite heating period.
(5) gas plasma is etched
1. heated filament ion ource electric current maintains 170~230A；
2. argon-arc plasma field maintains source current to reduce to 100~120A；
3. field supply reduces to 6~8A；
4. pressure in vacuum tank is adjusted to 2 × 10-150~65sccm of Pa, Ar throughput；
5. breakdown grid bias power supply, gradually powers up and is depressed into 0~200V of DC voltage, 300~500V of pulse voltage；
6. the ion etching period is about 50~90min.
(6) coating
1. heated filament ion ource electric current maintains 170~230A；
2. argon gas is adjusted to 23~35sccm,
3. field supply is adjusted to 25~35A；
4. bias is adjusted to 0~200V of voltage DC, 300~500V of pulse；
Plus argon-arc plasma field maintains source current to 200A (5min) 5.；
6. 5~20min of Ti intermediate metals is coated；
7. send nitrogen 80~120sccm；
8. bias is adjusted to 180V (10min)；
9. magnetic controlled sputtering target source, 1.0~2.0A (AlTiCr, C, Cr, Zr, Si etc.) are opened
10. bias is adjusted to 100~150V (10min)；
(11) 20~50min of plated film period；
(12) magnetic controlled sputtering target source is closed；
(13) close argon-arc plasma field and maintain power supply, filament supply, magnetic field power supply, heating source, N2Source, closing molecular pump 14 start
Power supply, opens and maintains pump (19)；
(14) argon gas is sent to 30Pa；
(7) cool down：60~120min of process time.
Measured data is contrasted：
As shown in Figure 6 and Figure 7, AlCrN coatings and the equipment profit using the present invention are prepared using single cathode arc
AlCrN coatings are prepared with AMS techniques to compare.Both have differences in (111), (200) diffraction maximum, are added by micro Mo,
Cause the enhancing of AlCrN (200) diffracted intensity.As shown in Figure 8 and Figure 9, prepared using the equipment utilization AMS techniques of the present invention
AlCrN coatings are after addition Mo, and film hardness improves about 10% or so.
As shown in fig. 10 and fig. 12, the TiAlN coatings prepared using single cathode arc, TiN (200) diffracted intensities compared with
By force, TiAlN (200) diffracted intensity is relatively weak, and film hardness is about 2400~3000HV.
As illustrated in figures 11 and 13, Al is adjusted by addition element using the equipment utilization AMS techniques of the present invention67Ti33N
Structure, TiAlN (200) diffracted intensity significantly changes, and film hardness is promoted to 3500~4000HV.
As shown in FIG. 14 and 15, to using film made from prior art and using the present invention in the same of AIP ion depositions
When incorporation single metallic elements method made from film carry out scratch experiment, to cut produce during acoustic energy carry out detect
To voice signal figure.As can be seen from the figure the acoustic energy during being produced using film cut produced by the present invention compares existing skill
Art is substantially reduced, and is indicated above the film hardness prepared by the present invention and is increased significantly compared with prior art.
Claims (9)
1. multicomponent alloy laminated film Preparation equipment, it is characterised in that：Including heating system, air supply system, cooling system, vacuum
System, vacuum chamber, luggage carrier (3), elevating mechanism, crucible evaporation source (23), controlled sputtering source (9), cathode arc source (8), electricity
Field generator for magnetic and electric control system, the vacuum system and vacuum chamber, the elevating mechanism are passed with luggage carrier (3)
Dynamic connection, the air supply system and vacuum chamber, the electric control system and crucible evaporation source (23), controlled sputtering source
(9), cathode arc source (8), electromagnetic field generator, heating system electrical connection, the crucible evaporation source (23), controlled sputtering source
(9), cathode arc source (8) is located in vacuum chamber, and the target-substrate distance of the cathode arc source (8) is 160mm to 230mm, the magnetic
The target-substrate distance for controlling sputtering source (9) is 50mm to 75mm.
2. multicomponent alloy laminated film Preparation equipment as claimed in claim 1, it is characterised in that：Also include heated filament ion gun
(10), the heated filament ion gun (10) is set in a vacuum chamber, and the heated filament ion gun (10) electrically connects with electric control system.
3. multicomponent alloy laminated film Preparation equipment as claimed in claim 2, it is characterised in that：The electric control system is also
Power supply, sputtering source current, cathode arc power supply, grid bias power supply, the plasma are maintained including ion source current, plasma
Power supply and ion source current is maintained to be connected with heated filament ion gun (10), the sputtering source current is connected with controlled sputtering source (9), institute
Cathode arc power supply is stated to be connected with cathode arc source (8).
4. multicomponent alloy laminated film Preparation equipment as claimed in claim 1, it is characterised in that：The heating system includes position
Heating system and the external radiation heating system positioned at vacuum chamber furnace wall surrounding inside electron beam in the middle part of vacuum chamber.
5. multicomponent alloy laminated film Preparation equipment as claimed in claim 1, it is characterised in that：The controlled sputtering source (9)
The inwall of vacuum chamber is symmetrically distributed in, the cathode arc source (8) is divided in the shape of a spiral using the centre of gyration of vacuum chamber as symmetry axis
Inwall of the cloth in vacuum chamber.
6. multicomponent alloy laminated film Preparation equipment as claimed in claim 1, it is characterised in that：The vacuum system includes dividing
Sub- pump (14), lobe pump (18), mechanical pump (20), maintenance pump (19), the molecular pump (14) and vacuum chamber, the maintenance
The exhaust outlet that pump (19) is connected with molecular pump (14) is connected, and institute's lobe pump (18) is connected with the exhaust outlet of molecular pump (14), described
Mechanical pump (20) is connected with the exhaust outlet of lobe pump (18).
7. multicomponent alloy laminated film Preparation equipment as claimed in claim 1, it is characterised in that：Also include protective case, it is described
Protective case be arranged on side of the cathode arc source (8) towards luggage carrier (3), the protective case away from cathode arc source (8) one
Side is additionally provided with baffle plate (26).
8. the method that multicomponent alloy laminated film is prepared using the multicomponent alloy laminated film Preparation equipment described in claim 1,
It is characterized in that：While carrying out multicomponent alloy material ions deposition using cathode arc source (8), utilize controlled sputtering source (9)
Single metallic elements are mixed, multicomponent alloy composite film layer is formed.
9. multicomponent alloy preparation method of composite film as claimed in claim 8, it is characterised in that：Evaporated by crucible evaporation source
Metallic element, is implanted into other elements, in workpiece while workpiece surface deposits to form metallic compound by controlled sputtering source
Surface forms multicomponent alloy laminated film.
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| CN201710305293.8A CN107130213B (en) | 2017-05-03 | 2017-05-03 | Multicomponent alloy laminated film Preparation equipment and preparation method |
| RU2017133149A RU2678492C1 (en) | 2017-05-03 | 2017-09-22 | Device for producing a composite film of multi-element alloy |
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| CN108330452A (en) * | 2018-01-12 | 2018-07-27 | 中国科学院宁波材料技术与工程研究所 | The preparation method of MAX phase coatings |
| CN108359937A (en) * | 2018-02-27 | 2018-08-03 | 温州驰诚真空机械有限公司 | Change type physical vapour deposition (PVD) particle source |
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| CN110804725A (en) * | 2019-11-19 | 2020-02-18 | 成都四盛科技有限公司 | Sublimation magnetron sputtering coating all-in-one |
| CN114164405A (en) * | 2021-12-07 | 2022-03-11 | 四川真锐晶甲科技有限公司 | Cutter thick film nitride coating and preparation method thereof |
| CN116590662A (en) * | 2023-05-09 | 2023-08-15 | 东莞市普拉提纳米科技有限公司 | Boron-containing high-entropy alloy cutter coating for cutting titanium alloy and preparation process thereof |
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| CN116590662A (en) * | 2023-05-09 | 2023-08-15 | 东莞市普拉提纳米科技有限公司 | Boron-containing high-entropy alloy cutter coating for cutting titanium alloy and preparation process thereof |
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Also Published As
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|---|---|
| CN107130213B (en) | 2019-04-09 |
| RU2678492C1 (en) | 2019-01-30 |
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