CN107127691B - Polyurethane matrix stone grinding polished silicon wafer and preparation method thereof - Google Patents
Polyurethane matrix stone grinding polished silicon wafer and preparation method thereof Download PDFInfo
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- CN107127691B CN107127691B CN201710377504.9A CN201710377504A CN107127691B CN 107127691 B CN107127691 B CN 107127691B CN 201710377504 A CN201710377504 A CN 201710377504A CN 107127691 B CN107127691 B CN 107127691B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L75/00—Compositions of polyureas or polyurethanes; Compositions of derivatives of such polymers
- C08L75/04—Polyurethanes
- C08L75/08—Polyurethanes from polyethers
Abstract
The present invention proposes a kind of polyurethane matrix stone grinding polished silicon wafer and preparation method thereof, this stone grinding polished silicon wafer relate to produce with polyurethane matrix, and mix synthetic diamond micropowder, carborundum, silica, aluminum oxide, the Novel stone abrasive polishing materials that zinc oxide ultra-fine powder is abrasive ingredients.The density of this Novel stone abrasive polishing materials is 0.1~0.5 gram/cm3, Shore A hardness is 30~85; polyurethane matrix has appropriate steep that wall and abscess; abrasive grains mix wherein; it is distributed in the polyurethane steep that wall in multidimensional structure; rub stone surface under milling apparatus pressure and turning effort, while also regular new, the sharp abrasive particle with working face can be constantly discharged in different aspects.Abrasive particle has more preferable self-sharpening, thus grinding has higher grinding effect and efficiency.
Description
(present patent application is divisional application, and former number of patent application is 201610719365.9；Applicant：Wang Jianqiu；
The applying date：On August 25th, 2016；Denomination of invention：The preparation method of polyurethane matrix stone grinding polished silicon wafer.)
Technical field
The present invention relates to belong to stone surface grinding and polishing technical field.It is particularly a kind of to be used as Novel stone grinding and polishing
Material using polyurethane as stone grinding polished silicon wafer of matrix and preparation method thereof, the grinding and polishing piece is mainly used in decoration
The surface grinding polishing of stone material and stone floor renovation.
Background technology
Natural and artificial stone material for decoration use surface has higher gloss and definition, can more show the color and decoration of stone material
Effect, therefore people are often using the height of stone surface glossiness as evaluation processing of stone quality and the standard of surface effect.
Grinding and polishing when the surface grinding polishing of masonry slab, stone floor renovation, is matched somebody with somebody by the different professional equipment of performance
The material with grinding function is closed to realize.Abrasive polishing materials thus with more preferable grinding, polishing function and efficiency
The problem paid high attention to as processing of stone and stone material nursing industry.
In stone grinding field, masonry slab surface is ground and polished, it is intended to stone surface is obtained preferably
Smooth or brightness effect.Polishing is ground to stone material, can simply be divided into three corase grind, fine grinding and polishing processes.
It is also a process from coarse to fine, from coarse to smooth on abrasive material design system and operating procedure.Certainly, stone surface is ground
The performance of polishing effect and milling apparatus has larger relation.The lifting of milling apparatus performance in recent years is polished to stone grinding and imitated
The lifting of fruit influences very big, and the raising of abrasive polishing materials (piece) performance seems hysteresis or stagnation.
Ground in stone floor or renovate field, due to the influence of the factors such as the flatness of masonry slab or skill of mating formation,
The different difference of degree, the especially edge of sheet material and these injustice of diagonal position occurs in the flatness on ground after stone material is mated formation
Whole sense is obvious, affects the decorative effect of stone floor.In order to eliminate these problems and phenomenon, generally after stone material is mated formation
Integral grinding is carried out again using a kind of " stone floor integral grinding technique " to stone floor to polish, to obtain preferable ground
Flatness and luster effect.The core composition of this " stone floor integral grinding technique " has two parts, and one is equipment, one
It is grinding.Due to restricting for the factors such as the mobility by equipment and operability, the abrasiveness of these floor grinding devices
Can be much not as good as those professional equipments of stone material factory, thus can have larger difference with the original gloss of sheet material on luster effect
It is different.In order to make up this technologic defect and difference, last polishing link is generally ground on floor and is thrown using some chemistry
Luminescent material, to improve the brightness effect of stone surface.For example, using some using oxalic acid and oxalates as mainly into the polishing of composition
Powder or polishing agent.There is some in operability and efficiency to lack for these polishing materials in the form of powder or liquid are states of matter
Regret, and cumbersome in program and technique, efficiency is low, and cost is high, to environment and and operating personnel there is also infringement etc..
Its lustrous surface can also be destroyed after stone floor is rubbed, and at this moment be also required to carry out at renovation its surface
Reason, this also turns into an important content of stone material nursing technique.The refreshing appliance and abrasive polishing materials of existing stone floor with
Above-mentioned " stone floor integral grinding technique " is identical, and the performance and efficiency of abrasive polishing materials (piece) are equally asked as a key
Topic.
Grinding and polishing effect of the self-sharpening of grinding and polishing piece to stone material have large effect, and this is that an industry is generally acknowledged
General knowledge.For the small-sized milling apparatus that rotating speed is low, pressure is light, work area is small, the performance of grinding and polishing piece is often determined
Determine final grinding effect.The abrasive particle that the self-sharpening of abrasive particle refers to be imbedded in matrix be worn in sharp face after can and
When expose or discharge the new abrasive particle with sharp face of other.Alloy base or epoxy resin-base and phenol
The abrasive material (grinding) of urea formaldehyde matrix often has preferable density, also there is higher chucking power to powder abrasive particle.Epoxy resin-matrix
Body and the phenolic resin as matrix resin top layer in grinding by thermal softening, also cause the self-sharpening of abrasive material to be deteriorated.Actually abrasive material from
Sharp property is exactly the ability of a kind of " self-renewing " and " weeding out the old and bring forth the new ".
Domestic and international stone grinding polished silicon wafer, which is manufactured mainly, at present three kinds of matrixes and form, and one kind is ore deposit soil matrix body,
One kind is alloy base, and one kind is resin matrix.These three different matrixes are all to merge a certain amount of people in addition
Make on the basis of the abrasive materials such as diamond, carborundum and aluminum oxide to complete grinding function.
Ore deposit soil abrasive sheet is a kind of traditional way that stone grinding polished silicon wafer is prepared using magnesia, due to production technology
Cumbersome, manufacture efficiency is low, and hardness is difficult to adjust, and seldom uses at present.
Alloy base abrasive sheet, matrix is hard nonelastic, has under the weight of milling apparatus and stone surface is scratched
Possibility, be used only for the corase grind program of stone material at present.
Resin matrix abrasive sheet, matrix phase is relatively low for hardness of stone, is suitable for corase grind, fine grinding and the polishing of stone material.
Epoxy resin and phenolic resin are that the main flow of current resin matrix grinding-material selects, and the relatively easy province in processing technology
Thing so that resinous abrasive materials turn into existing market main flow species.But either epoxy resin or phenolic resin, solidifying
There is also the problem of matrix hardness and of a relatively high density after shaping so that matrix and abrasive particle are ground the patch on surface with stone material
It is right not high.And heat caused by working also make it that matrix becomes sticky, the resin clamping degree higher to abrasive particle also to grind
The self-sharpening of grain is not good enough.These defects are a common problems and bottleneck for current industry, cause the grinding and polishing of stone material to imitate
Fruit did not increased significantly and broken through in a longer period.
The technology that polished silicon wafer using polyurethane resin as matrix is applied to precision glass polishing has had been reported that.By document
Retrieval and market survey find that the functional form of existing this kind of polyurethane resin polished silicon wafer typically has two kinds：One kind is free from grinding
Material, use as polished die and medium, chemically-mechanicapolish polished for CMP；A kind of is containing cerium oxide abrasives, for optics
Glass and semiconductor wafer etc. polish in high precision.But if second of polished silicon wafer of market reaction were used for glass polishing, its operability
Not high with practicality, application of this polished silicon wafer to stone polishing also has no report and case.
Applicant has carried out multiple stone polishing using above-mentioned this kind of polished silicon wafer and tested.From test, this kind of polished silicon wafer
Polishing effect for stone material is poor, and its prior art and technique are not appropriate for the grinding and polishing of stone material.Theoretically analyze, it is former
Therefore one is that the formula system of existing this kind of polished silicon wafer is only suitable only for glass or other crystallites and without the fine of brilliant body surface
Polishing；The two of reason are that the formula system of existing this kind of polished silicon wafer polyurethane resin causes matrix hardness and density to be not appropriate for
Stone material, the three of reason is the grinding and polishing that its abrasive system is not appropriate for stone material.
The content of the invention
The technical problem to be solved by the invention is to provide a kind of new polyurethane matrix stone grinding polished silicon wafer and preparation
Method, for the grinding and polishing of stone surface, there is higher luster effect and operating efficiency, it may have higher economic implications
And social effect.Firstth, matrix is made with polyurethane resin, grinding can be made, which to be ground surface with stone material, has more preferable stickiness,
Abrasive particle has more preferable self-sharpening, there is lifting by a relatively large margin in effect and efficiency；Secondth, matrix is made with polyurethane resin
Stone grinding polished silicon wafer is used for the renovation operation of stone floor, is significantly improved in effect and efficiency；3rd, with polyurethane resin
The stone grinding polished silicon wafer for making matrix is used for the grinding and polishing of stone material, can particularly for the renovation grinding and polishing of stone floor
The chemical polishing material such as substantial amounts of polishing powder is eliminated the need for, reduces these chemical polishing materials and environment and operating personnel is brought
Pollution and injury.
In order to solve the above-mentioned technical problem, present invention employs following technical scheme.
A kind of polyurethane matrix stone grinding polished silicon wafer, the grinding and polishing piece mainly includes polyurethane matrix and powder is ground
Material,
Powder abrasive material is blended in the polyurethane reaction system being made up of PPG and polyisocyanates, forms tool
There is the polyurethane matrix stone grinding polished silicon wafer of grinding and polishing function.Polyurethane grinding and polishing piece with these features, a side
Benefit from the distinctive abscess of polyurethane and elastic characteristic in face so that abrasive material can preferably be bonded with stone surface and with bigger
Contact surface, on the other hand benefit from the polyurethane matrix after abrasive material is uniformly scattered in hardened forming, polyurethane matrix pair
Between abrasive material appropriate chucking power the preferable self-sharpening of grinding and polishing piece self-assembling formation can be made so as to higher grinding efficiency and
Polishing effect.
Using PPG, catalyst and foaming agent as functional material and reaction material, chain extender and plasticizer conduct
Auxiliary material, it is mixed to form a pre- constituent unit of material of polyurethane grinding and polishing piece；PPG, catalyst, chain extension
The mass ratio of agent, foaming agent and plasticizer is：100：0.3~5：1~6：0.5~5：1~5.
Using polyisocyanates as functional material, modified poly ethylene wax powder and reinforcing fiber mix shape as auxiliary material
The pre- constituent unit of another material of generating polyurethane polished silicon wafer；Between polyisocyanates, modified poly ethylene wax powder and reinforcing fiber
Mass ratio be：100：0~5：0~5.
Using synthetic diamond micropowder as main functional material, carborundum, silica, aluminum oxide and Zinc oxide powder are auxiliary
Material, it is mixed to form the 3rd pre- constituent unit of material of polyurethane grinding and polishing piece；Diamond, carborundum, silica, oxygen
The mass ratio changed between aluminium and zinc oxide is 100：0~40：0~10：0~40：0~5.
A kind of polyurethane matrix stone grinding polished silicon wafer and preparation method, it is characterised in that follow the steps below：
1) component A, is prepared：PPG, catalyst, chain extender, foaming agent and plasticizer are poured into respectively in proportion
In stainless steel and stir, obtain component A；
PPG, catalyst, chain extender, the mass ratio of foaming agent and plasticizer are：100：0.3~5：1~6：0.5
~5：1~5；
Wherein described catalyst be tertiary amine catalyst either organometallic catalysts or tertiary amine catalyst with
The combination of organometallic catalysts arbitrary proportion；
2) B component, is prepared：Default powder abrasive material is poured into proportion B component is uniformly mixing to obtain in component A；
The powder abrasive material is diamond, carborundum, silica, aluminum oxide and zinc oxide according to mass ratio 100：0
~40,100：0~10,100：0~40,100：0~5 composition；
Mass ratio between component A and powder abrasive material is 100：10~50；
3) stone grinding polished silicon wafer, is prepared：Polyisocyanates, modified poly ethylene wax powder and reinforcing fiber are mixed in proportion
The time of quick stirring 15~45 seconds in B component is added to as component C, is subsequently poured into mould internal pressure mold forming, last machinery
Section shaping, obtains polyurethane matrix stone grinding polished silicon wafer；
The mass ratio between polyisocyanates, modified poly ethylene wax powder and reinforcing fiber wherein as component C is：100：
0~5：0~5；
By adjusting the mass ratio between component A and component C, 0.1~0.5 gram/cm of density is obtained3, Shore A hardness 30~
85 stone grinding polished silicon wafer.
PPG described in step 1) is one or any in different degree of functionality low molecular polyether polyalcohols
Ratio it is two or more；Described chain extender is the amine or alcohol compound of two degree of functionality small-molecular-weights；Described foaming agent
For physical blowing agent；Described plasticizer is aerosil.
Polyisocyanates described in step 3) is toluene di-isocyanate(TDI), how sub- IPDI, polyaryl be
One or any ratio in methyl isocyanate and the modifying diisocyanates of degree of functionality 2~4 it is two or more；Described
Modified poly ethylene wax powder is polyamide modified Tissuemat E, as grinding aid and is used for the abrasion resistance for improving matrix；Described increasing
Strong fiber is glass fibre or synthetic fibers, the reinforcing agent as matrix；Quick stirring refer to the rotating speed of mixer 1500~
In the range of 4500 revs/min.
Described foaming agent is pentane.
PPG molecular weight is in the range of 300~2000, and for hydroxyl value in 50~600mg KOH/g, degree of functionality 2~3 can
Choosing.
Catalyst described in step 1) is tertiary amine catalyst.
Step 2) the powder abrasive material is powder of the particle diameter at 0.5-350 μm.
In step 3), the mass ratio between component A and component C is 100：60~110.
A kind of polyurethane matrix stone grinding polished silicon wafer, it is characterised in that:The grinding and polishing piece mainly includes polyurethane-base
Body and powder abrasive material, the polished silicon wafer are prepared according to following steps：
1) component A is prepared：PPG, catalyst, chain extender, foaming agent and plasticizer are poured into respectively in proportion mixed
Close in container and stir, obtain component A；
PPG, catalyst, chain extender, the mass ratio of foaming agent and plasticizer are：100：0.3~5：1~6：0.5
~5：1~5；
Wherein described catalyst be tertiary amine catalyst either organometallic catalysts or tertiary amine catalyst with
The combination of organometallic catalysts arbitrary proportion；
2) B component is prepared：Default powder abrasive material is poured into proportion B component is uniformly mixing to obtain in component A；
The powder abrasive material is diamond, carborundum, silica, aluminum oxide and zinc oxide according to mass ratio 100：0
~40：0~10：0~40：0~5；
Mass ratio between component A and powder abrasive material is 100：10~50；
3) stone grinding polished silicon wafer is prepared：Polyisocyanates, modified poly ethylene wax powder and reinforcing fiber are mixed in proportion
It is added in B component as component C and quickly stirs, or B component is added in C components and quickly stirred, is subsequently poured into mould
Internal pressure mold forming, last machinery section shaping, obtains polyurethane matrix stone grinding polished silicon wafer；
The mass ratio between polyisocyanates, modified poly ethylene wax powder and reinforcing fiber wherein as component C is：100：
0~5：0~5.
Mass ratio between component A and component C is 100：60~110.
A kind of preparation method of polyurethane matrix stone grinding polished silicon wafer, it is characterised in that prepared according to following steps：
1) component A is prepared：PPG, catalyst, chain extender, foaming agent and plasticizer are poured into respectively in proportion mixed
Close in container and stir, obtain component A；
PPG, catalyst, chain extender, the mass ratio of foaming agent and plasticizer are：100：0.3~5：1~6：0.5
~5：1~5；
Wherein described catalyst be tertiary amine catalyst either organometallic catalysts or tertiary amine catalyst with
The combination of organometallic catalysts arbitrary proportion；
2) component C is prepared：Default powder abrasive material is poured into the polyisocyanates as component C, modified poly- second in proportion
Mixed in alkene wax powder and reinforcing fiber；
The powder abrasive material is diamond, carborundum, silica, aluminum oxide and zinc oxide according to mass ratio 100：0
~40：0~10：0~40：0~5；
The mass ratio between polyisocyanates, modified poly ethylene wax powder and reinforcing fiber wherein as component C is：100：
0~5：0~5.
Mass ratio between component C and powder abrasive material is 100：10~50；
3) stone grinding polished silicon wafer is prepared：Component C containing abrasive material is added in component A or is added to component A
Quickly stirred in component C containing abrasive material, be subsequently poured into mould internal pressure mold forming, last machinery section shaping, obtain polyurethane
Matrix stone grinding polished silicon wafer.
Preferably, described step 1), which prepares component A, is：PPG, catalyst and foaming agent are distinguished in proportion
Pour into stainless steel and stir, obtain component A；
The mass ratio of PPG, catalyst and foaming agent is：100：0.3~5：0.5~5；
Mass ratio between component C and powder abrasive material is 100：10~50；
Component A is 100 with the mass ratio of component C and abrasive mixture：60~110.
The positive effect of the present invention is：
1st, polyurethane matrix caused by the present invention has appropriate steep that wall and abscess, and abrasive grains mix wherein, distribution
In the polyurethane steep that wall in multidimensional structure, rub stone surface under milling apparatus pressure and turning effort, while also has
Rule constantly discharges new, the sharp abrasive particle with working face in different aspects.Abrasive particle has preferably from sharp
Property, thus grinding has higher grinding effect and efficiency.
2nd, the present invention caused by polyurethane matrix there is appropriate pliability, milling apparatus pressure effect under with stone material
Being ground surface has fabulous compactness and appropriate abrasive action power, thus has higher grinding effect and efficiency.
3rd, polyurethane matrix caused by the present invention has appropriate pliability and abscess.Matrix surface and stone material at work
It is ground surface to be bonded completely, the abscess being distributed in matrix different aspects by these so that blade surface is roughened all the time,
Self-sharpening is not only provided with, has had more maximum functional surface area.And the abrasive particle that those split away off from matrix is at these
Constantly rubbed again with stone surface under the lapped face of roughening, realize secondary use and grind again, greatly improve
Grinding rate, thus the grinding and polishing efficiency with optimal grinding polishing effect and Geng Gao.
4, use PPG to be used as a kind of energy functional material in polyurethane reaction system in of the invention, will make
Polyurethane matrix obtains more preferable hardness and foam structure.
5th, polyurethane grinding and polishing piece caused by the present invention be using diamond powder for main grinding and polishing because
Son, arrange in pairs or groups mixed proper amount of carborundum, silica, aluminum oxide and Zinc oxide powder, to reach optimal grinding and polishing effect.People
It is one kind most hard in current stone grinding polishing material system to make diamond, and the relatively low abrasive material of appropriate hardness of arranging in pairs or groups is more
Meet grinding and polishing mechanism, effect and efficiency disclosure satisfy that maximization.
6th, polyurethane grinding and polishing piece caused by the present invention with the addition of appropriate modification high-density polyethylene wax powder, not only
Make grinding matrix more wear-resisting, but also " microballon effect " can be produced, reduce grinding with being ground the resistance on surface, improve
Grinding and polishing speed.
7th, selection adds appropriate plasticizer and would be even more beneficial to that various materials are well mixed and note in material system of the present invention
Mold forming.
8th, polyurethane grinding and polishing piece proposed by the invention is a series of or a set of or one group or a piece of has independent work(
The grinding of energy or combination function and combination or the unit for polishing function, to adapt to the thick surface grinding of stone material or surface from coarse to fine
Grinding or the different requirements from coarse to fine for arriving polishing process again.It can both select and stone material was ground containing the grinding compared with coarse grit
Flat processing, also can be selected and the stone surface of low gloss is processed by shot blasting containing the grinding compared with fine grit, also can be selected complete
Grinding to stone material carry out it is from coarse to fine arrive high glaze again stone surface processing.
Embodiment
The present invention is further illustrated with reference to embodiment and contrast experiment's effect.
Stone grinding polished silicon wafer of the present invention follows the steps below：
1) component A, is prepared：PPG, catalyst, chain extender, foaming agent and plasticizer are poured into respectively in proportion
In stainless steel and stir, obtain component A；
PPG, catalyst, chain extender, the mass ratio of foaming agent and plasticizer are：100：0.3~5：1~6：0.5
~5：1~5；
Wherein described catalyst be tertiary amine catalyst either organometallic catalysts or tertiary amine catalyst with
The combination of organometallic catalysts arbitrary proportion；
2) B component, is prepared：Default powder abrasive material is poured into proportion B component is uniformly mixing to obtain in component A；
The powder abrasive material is diamond, carborundum, silica, aluminum oxide and zinc oxide according to mass ratio 100：0
~40,100：0~10,100：0~40,100：0~5；
Mass ratio between component A and powder abrasive material is 100：10~50；
3) stone grinding polished silicon wafer, is prepared：Polyisocyanates, modified poly ethylene wax powder and reinforcing fiber are mixed in proportion
The time of quick stirring 15~45 seconds in B component is added to as component C, is subsequently poured into mould internal pressure mold forming, last machinery
Section shaping, obtains polyurethane matrix stone grinding polished silicon wafer；
The mass ratio between polyisocyanates, modified poly ethylene wax powder and reinforcing fiber wherein as component C is：100：
0~5：0~5；
By adjusting the mass ratio between component A and component C, 0.1~0.5 gram/cm of density is obtained3, Shore A hardness 30~
85 stone grinding polished silicon wafer.
In step 3), the mass ratio between component A and component C is 100：60~110.
Wherein it is used for the abrasive sheet for roughly grinding the stage, the mass ratio between component A and component C is 100：90~110；
Wherein it is used for the abrasive sheet in fine grinding stage, the mass ratio between component A and component C is 100：80~100；
Wherein it is used for the abrasive sheet for polishing the stage, the mass ratio between component A and component C is 100：60~90.
Described PPG be different degree of functionality low molecular polyether polyalcohols one kind and multiple combinations, its molecule
Amount is optional in 300-2000, and its hydroxyl value is optional in 50-600KOH/g.It is preferred that polyether triol of the hydroxyl value in 200-550KOH/g.
The amine or alcohol compound of the optional two degrees of functionality small-molecular-weight of described chain extender, preferably ethylene glycol.
Described foaming agent is physical blowing agent, preferably pentane.
Described catalyst is the one or more in tertiary amine catalyst and organo-metallic catalyst, and preferred tertiary amine is catalyzed
Agent dimethyl cyclohexyl amine.
Described plasticizer is micro-size silica powder, preferably aerosil micro mist.
Described abrasive ingredients are therein by artificial stone diamond and carborundum, silica, aluminum oxide and zinc oxide ultra_fine powderses
One or more combination.
Wherein 0.2 μm -350 μm of diamond Abrasive Particle Size is optional.For making artificial diamond's stone mill of corase grind grinding
Preferably 100 μm -350 μm of particle diameter of grain；For making preferably 100 μm -25 μm of the diamond Abrasive Particle Size of fine grinding grinding；For
Make preferably 25 μm -1 μm of the diamond Abrasive Particle Size of polished silicon wafer；
Wherein 20 μm -100 μm of silicon carbide powder particle diameter is optional, 20 μm -50 μm of preferable particle size.
Wherein 0.1 μm -20 μm of silica powder particle diameter is optional, 1 μm -10 μm of preferable particle size.
Wherein 0.1 μm -20 μm of alumina powder particle diameter is optional, 1 μm -10 μm of preferable particle size.
Wherein 1.5 μm -50 μm of Zinc oxide powder particle diameter is optional, 2 μm -10 μm of preferable particle size.
Described polyisocyanates is that toluene di-isocyanate(TDI), IPDI, polyaryl polymethylene are different
One or any ratio in cyanate and degree of functionality 2-4 modifying diisocyanates it is two or more.It is preferred that the function that is averaged
Degree is more than Carbodiimide-Modified liquefied mdi of 2, the NCO mass fractions in 28%-30%.
Described modified polyethylene wax is polyamide modified Natene, micro mist shape, density 0.95-1.Preferred density
For 0.97, particle diameter D50：5.5-7um.
Described reinforcing fiber is polypropylene fibre, length 3-12mm.Preferred length is 6mm.
0.1-0.5 grams of density/cm of stone grinding polished silicon wafer prepared by the present invention3；Shore A hardness 30-85, monolithic or one
Group or the combination of multigroup function.
It is the specific preparating example of the present invention below.
Example one
The preparation method that this example provides one group of marble grinding and polishing piece, by abrasive size used it is different produce 1#, 2#,
3#, 4#, 5#, 6#, 7# possess corase grind, fine grinding and the grinding of polishing function combination.
(1), prefabricated component A：With 100 grams of polyether triol (mean molecule quantity 350, hydroxyl value 500), tertiary amine catalyst diformazan
3 grams of basic ring hexylamine, 5 grams of glycol chain extender, 1.5 grams of foaming agent pentane, 5 grams of plasticizer aerosil micro mist, are sequentially mixed
Conjunction stirs stand-by.Prefabricated identical 7 parts of the component A of this example, for producing 1-7# grinding groups.
(2) B component, is prepared：35 grams of diamond abrasive particle of 270-300 μm of metering and 30-35 μm of 15 grams of silicon powder of charing
As 1# abrasive materials；35 grams of diamond abrasive particle of 125-150 μm of metering and 30-35 μm of 15 grams of charing silicon powder are used as 2# abrasive materials；
35 grams of diamond abrasive particle of 50-60 μm of metering and 30-35 μm of 15 grams of charing silicon powder are used as 3# abrasive materials；Measure 25-30 μm of people
Make 35 grams of diamond abrasive grain and be used as 4# abrasive materials；35 grams of diamond abrasive particle of 12-15 μm of metering is used as 5# abrasive materials；4-6 μm of metering
35 grams of diamond abrasive particle is used as 6# abrasive materials；35 grams of diamond abrasive particle of 1-3 μm of metering is used as 7# abrasive materials.
(3) C components, are prepared：A kind of commercial carbonized diimine is modified 110 grams of liquefied mdi, polyamide modified high density is gathered
3.5 grams of ethylene waxes micro mist, 3 grams of polypropylene fibre, are sequentially mixed evenly stand-by.Prefabricated identical 7 parts of the C components of this example, use
In producing 1#-7# grinding groups.
(4), the B component 1# abrasive materials measured are mixed with a component A, stirred using electric blender.Again will
The C component portions measured are poured into above-mentioned AB mixtures, are quickly well mixed, are subsequently poured into mould using electric blender
Foaming is stand-by.
(5), the 1# polyurethane foams of foaming are cut into slices according to the specification of design and are molded, form 1# grinding and polishings
Piece finished product, and carry out mark.
(6), mixed respectively successively from the abrasive material component of B component remaining 6 specification with a component A, then with a C
Component mixes.Thus other 6 2#-7# grinding and polishing pieces are produced, and carry out respective markers respectively.
Example two
(1) example two uses and one identical component A of example and B component dispensing.Same A, B component each prefabricated seven
Part.
(2) polyamide modified high density polyethylene waxes powder and polypropylene fibre in the C components of example one are cut.It is same pre-
Seven parts of system.
(3) 1-7# grinding and polishing piece groups are produced using with the identical technique of example one and program.
Example three
(1) example three uses and one identical component A of example and C component dispensings, each prefabricated portion of A, C component.
(2) B component of example three only with 7# abrasive materials identical dispensing, i.e. 1-3 μm of artificial diamond in the B component of example one
35 grams of stone mill grain.The prefabricated portion of B component.
(3) 7# polished silicon wafers are produced using with the identical technique of example one and program.
(4) the 7# grinding and polishings piece that example three is produced can be individually used for stone grinding as the polishing material of standalone feature
Polishing link, to substitute existing commercially available polished silicon wafer and polishing powder.
It is that example one, the experimental results of example two and example three and contrast test tested result below.
Experiment test one
To being worn, the marble floor that loss of gloss is serious re-grind polishing, do renovation processing.Milling apparatus uses 12
Head floor grinding machine (12 grindings of installation, rotating speed are 580 revs/min), the polyurethane grinding and polishing piece for coordinating example one to produce
1-7# carries out renovating grinding and polishing successively to the marble floor being worn.
1# grinding and polishings piece is installed respectively and each 12 of 2# grinding and polishing pieces carry out coarse grinding treatment to floor, grinder promotes
Speed be about 20 ms/min, often row marble grind two back and forth.
3# grinding and polishings piece, 4# grinding and polishings piece and each 12 of 5# grinding and polishing pieces are installed respectively to carry out at fine grinding floor
Reason, the speed that grinder promotes is about 30 ms/min, and often row marble grinds two back and forth.
6# grinding and polishings piece is installed respectively and each 12 of 7# grinding and polishing pieces are processed by shot blasting to floor, grinder promotes
Speed be about 25 ms/min, often row marble grind two back and forth.
Use the front and rear marble surface gloss of mirror luster instrument measurement grinding.10 pieces of plate faces of random test, every piece of plate face
5 points are tested, calculate average gloss.It the results are shown in Table 1.
Table 1
Experiment test two
With being worn of the same area of experiment test one, the marble floor that loss of gloss is serious re-grinds polishing, turn over
New processing.
Use the polyurethane grinding and polishing 1- produced with experiment test one identical, 12 floor grinding machines, cooperation example two
7# is carried out renovating grinding and polishing successively to the marble floor being worn, and fltting speed and technique and the experiment of grinder are surveyed
It is identical to try one.
The measurement of luster method of experiment test two is identical with experiment test one, as a result table 2.
Table 2
Contrast test one
With being worn of the same area of experiment test one, the marble floor that loss of gloss is serious re-grinds polishing, turn over
New processing.
Using (same with experiment test one identical, 12 floor grinding machines, cooperation commercial phenolic resin soft abrasive disk 1-7#
With corase grind, fine grinding and polishing function, for marble floor grinding and polishing) marble floor being worn is carried out successively
Renovation grinding and polishing.
The fltting speed and technique of grinder are identical with experiment test one.
The measurement of luster method of contrast test one is identical with experiment test one, the results are shown in Table 3.
Table 3
Contrast test two
10 square metres of area is selected in the region after the grinding and polishing of contrast test one, using with experiment test one
12 floor grinding machines of identical, the 7# grinding and polishings piece produced with the use of example three (being used as independent polishing function) are right
Marble floor carries out re-polishing.
The fltting speed and technique of grinder are identical with experiment test one.
The measurement of luster method of contrast test two is identical with experiment test one, the results are shown in Table 4
Table 4
Contrast test three
10 square metres of area is selected in the region after the grinding and polishing of contrast test one, is thrown using disc shape floor board
Ray machine (rotating speed is 175 revs/min) carries out re-polishing with the use of commercially available marble polishing powder to marble floor.Polishing velocity
About 2 square metres/3 minutes.Clean out polishing powder slurries.
The measurement of luster method of contrast test three is identical with experiment test one, the results are shown in Table 5.
Table 5
Contrast test four
Remaining 10 square metres of areas are selected in the region after the grinding and polishing of contrast test one, using disc type
Plate-polishing machine (rotating speed is 175 revs/min), (contains particle diameter 0.8-2 with the use of a kind of commercially available precision glass polyurethane polishing disc
μm cerium oxide) re-polishing is carried out to marble floor.Polishing velocity is about 2 square metres/5 minutes.The gloss of contrast test four is surveyed
Method for testing is identical with experiment test one, the results are shown in Table 6.
Table 6
Experiment test and contrast test result are summarized：
By examples detailed above test and contrast test, it is apparent that the new polyurethane stone grinding that the present invention produces
Polished silicon wafer not only has significant grinding polishing effect, and more has higher operating efficiency, solves and compensate for existing stone material
Gloss has the problem of deficiency and low efficiency of larger difference than raw sheet when floor is renovated, and also eliminates using polishing powder to making
The harm that industry personnel and environment are brought.
1st, by experiment test one and the Comparative result of experiment test two, the grinding that example one and example two are produced is reflected
Difference of the polished silicon wafer in performance.Example one add modified poly ethylene wax powder to the effect of grinding and polishing piece of the present invention, efficiency and
Durability has and preferably improved.
2nd, found out by the test result of experiment test one, experiment test two and contrast test one, the present invention produces new
Type polyurethane stone grinding polished silicon wafer increases significantly with existing market main flow phenolic resin grinding and polishing piece in effect.
3rd, found out by experiment test one, experiment test two and contrast test two, the test result of contrast test three, this hair
The method that the bright new polyurethane stone grinding polished silicon wafer produced increases marble polishing powder with existing market main flow grinding and polishing piece
Not only luster effect is high, and has significant advantage in efficiency.The way of prior art is generally exactly contrast test one and right
Than the combination of test three.But from effect and efficiency, experiment test one (example one) of the invention and experiment test two are (real
Example two) result be significantly larger than existing way.In terms of single polishing program, either effect or efficiency are of the invention
Contrast test two (example three) is obviously higher than existing polishing powder (contrast test three).
4th, found out by the test result of contrast test one, contrast test two and contrast test three, the 7# that example three is produced
Grinding and polishing piece uses as the polished silicon wafer with independent polishing function, equally with significant effect and efficiency.
5th, found out by the test result of contrast test four, it is existing commercially available to be used for precision glass containing cerium oxide abrasive particle
Polishing of the polyurethane polishing disc for stone material Deng polishing does not have obvious effect and efficiency.
It is described above to be the design according to the present invention and operation principle and implement the optimal of the inventive concept and operation principle
Embodiment.Above-described embodiment should not be construed as the restriction to present inventive concept and operation principle, according to other of present inventive concept
Embodiment and implementation, and the combination of embodiment and implementation belong to protection scope of the present invention.Following implementation
Mode falls within protection scope of the present invention:
1st, the novel polyurethane grinding and polishing piece that examples detailed above is produced, density are 0.35-0.42 grams/cm3, shore hardness A
For 60-80.
2nd, appropriate colouring agent can be added to obtain different colours according to different specifications or model when above-mentioned grinding is produced
Grinding, be advantageous to distinguish different size and model.
3rd, examples detailed above material therefor and combination, the whole the present invention relates to technology is not represented.
4th, new grinding polished silicon wafer of the present invention, can according to the kind and hardness of stone material, adjust A, B, in component C material into
Point, the density and hardness of mixing ratio, specification and foam base plate, to obtain optimum efficiency and efficiency.
5th, grinding disk of the present invention, the profile and specification of grinding are can adjust, installed for the large-scale of processing of stone factory specialty
Grinder is used for the grinding and polishing of large stone material plate.
Claims (13)
- A kind of 1. polyurethane matrix stone grinding polished silicon wafer, it is characterised in that:The grinding and polishing piece mainly includes polyurethane matrix With powder abrasive material, the stone grinding polished silicon wafer is made up of following material hybrid reaction：1) a pre- component A group of polished silicon wafer is mixed to form with PPG, catalyst, foaming agent, chain extender and plasticizer Point；PPG, catalyst, chain extender, the mass ratio of foaming agent and plasticizer are：100：0.3~5：1~6：0.5~5： 1~5；2) using polyisocyanates as functional material, modified poly ethylene wax powder and reinforcing fiber are mixed to form as auxiliary material One pre- component component C of polished silicon wafer；Mass ratio between polyisocyanates, modified poly ethylene wax powder and reinforcing fiber is：100：0~5：0~5；3) using synthetic diamond micropowder as main functional material, carborundum, silica, aluminum oxide and Zinc oxide powder are auxiliary material Material, is mixed to form one pre- component of powder of polished silicon wafer；Mass ratio between diamond, carborundum, silica, aluminum oxide and zinc oxide is 100：0~40：0~10：0~ 40：0~5；4) using synthetic diamond micropowder as the pre- component of the powder of main functional material, can be pre-mixed in practice in pre- component A, Also can be pre-mixed in pre- component C, mixed form alternative；Mass ratio between the pre- components of pre- component A and powder is 100：10~50；Mass ratio between the pre- components of pre- component C and powder is 100：10~50.
- 2. polyurethane matrix stone grinding polished silicon wafer according to claim 1, it is characterised in that：Described PPG For the two or more of the one or any ratio in different degree of functionality PPGs.
- 3. polyurethane matrix stone grinding polished silicon wafer according to claim 2, it is characterised in that：Described PPG Hydroxyl value is in 50~600mg KOH/g.
- 4. polyurethane matrix stone grinding polished silicon wafer according to claim 1, it is characterised in that：Wherein described catalyst For tertiary amine catalyst either organometallic catalysts or tertiary amine catalyst and organometallic catalysts arbitrary proportion Combination.
- 5. polyurethane matrix stone grinding polished silicon wafer according to claim 1, it is characterised in that：Wherein described foaming agent For physical blowing agent.
- 6. polyurethane matrix stone grinding polished silicon wafer according to claim 1, it is characterised in that：Described polyisocyanates For the modification of toluene di-isocyanate(TDI), IPDI, polyaryl polymethylene isocyanates and degree of functionality 2~4 One of which or arbitrary proportion in diisocyanate it is two or more.
- 7. polyurethane matrix stone grinding polished silicon wafer according to claim 1, it is characterised in that：Step 3) the powder is pre- Component is powder of the particle diameter at 0.5-350 μm.
- 8. the polyurethane matrix stone grinding polished silicon wafer according to claim 1 to 7 any one claim, its feature exist In：The density of described polyurethane matrix is 0.1~0.5 gram/cm3。
- 9. the polyurethane matrix stone grinding polished silicon wafer according to claim 1 to 7 any one claim, its feature exist In：The Shore A hardness of described polyurethane matrix is 30~85.
- 10. the preparation method of polyurethane matrix stone grinding polished silicon wafer, it is characterised in that prepared according to following steps：1) component A is prepared：PPG, catalyst, chain extender, foaming agent and plasticizer are poured into mixing respectively in proportion to hold In device and stir, obtain component A；PPG, catalyst, chain extender, the mass ratio of foaming agent and plasticizer are：100：0.3~5：1~6：0.5~5： 1~5；Wherein described catalyst be tertiary amine catalyst either organometallic catalysts or tertiary amine catalyst with it is organic The combination of metal-based catalysts arbitrary proportion；2) B component is prepared：Default powder abrasive material is poured into proportion B component is uniformly mixing to obtain in component A；The powder abrasive material is diamond, carborundum, silica, aluminum oxide and zinc oxide according to mass ratio 100：0~40： 0~10：0~40：0~5 composition；Mass ratio between component A and powder abrasive material is 100：10~50；3) stone grinding polished silicon wafer is prepared：Polyisocyanates, modified poly ethylene wax powder and reinforcing fiber are mixed as C in proportion Component is added in B component and quickly stirred, or B component is added in C components and quickly stirred, and is subsequently poured into pressing mold in mould Shaping, last machinery section shaping, obtains polyurethane matrix stone grinding polished silicon wafer；Mass ratio between the polyisocyanates of component C, modified poly ethylene wax powder and reinforcing fiber is：100：0~5：0~5；The mass ratio of component A and component C is 100：60~110.
- 11. according to the polyurethane matrix stone material prepared by the preparation method of claim 10 polyurethane matrix stone grinding polished silicon wafer Grinding and polishing piece.
- 12. polyurethane matrix stone grinding polished silicon wafer according to claim 11, it is characterised in that：Described polyurethane-base The density of body is 0.1~0.5 gram/cm3。
- 13. polyurethane matrix stone grinding polished silicon wafer according to claim 11, it is characterised in that：Described polyurethane-base The Shore A hardness of body is 30~85.
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| CN107127691B (en) * | 2016-08-25 | 2018-03-23 | 王建秋 | Polyurethane matrix stone grinding polished silicon wafer and preparation method thereof |
| CN106938446A (en) * | 2017-04-14 | 2017-07-11 | 龙口东润砂轮有限公司 | Polyurethane emery wheel |
| CN107674304A (en) * | 2017-10-17 | 2018-02-09 | 昆山纳诺新材料科技有限公司 | Thermoplasticity abrasive material and its manufacture method are used in a kind of hard alloy polishing |
| CN108247529B (en) * | 2018-04-02 | 2020-11-10 | 上海欧柏森环境工程管理有限公司 | Stone polishing, crystallizing, grinding and cleaning pad |
| CN108747863B (en) * | 2018-06-01 | 2020-09-11 | 上海欧柏森环境工程管理有限公司 | Polishing and crystallizing cleaning pad for combined stone |
| CN110271184A (en) * | 2019-05-04 | 2019-09-24 | 西北农林科技大学 | A kind of complex curved surface parts Special precision grinding and polishing piece and its 3D printing preparation method |
| CN111171271B (en) * | 2020-02-25 | 2022-08-19 | 广州市环友高分子新材料有限公司 | Preparation method of heat-resistant polyurethane elastomer |
| CN111690113B (en) * | 2020-07-30 | 2022-02-11 | 安徽大松树脂有限公司 | Preparation method of microporous diamond elastic module resin |
| CN113787468A (en) * | 2021-09-15 | 2021-12-14 | 王文婷 | Polyurethane matrix wear-resistant stone polishing material and preparation method thereof |
| CN113956421A (en) * | 2021-11-16 | 2022-01-21 | 上海映智研磨材料有限公司 | Polyurethane polishing pad material and preparation method and application thereof |
| CN114952643A (en) * | 2022-05-25 | 2022-08-30 | 成都贝瑞光电科技股份有限公司 | Manufacturing method of fixed abrasive polishing asphalt disc |
| CN115319649B (en) * | 2022-09-03 | 2023-08-04 | 深圳市永霖科技有限公司 | PU polishing sand paper for glass polishing and preparation method thereof |
| CN116144166B (en) * | 2023-04-23 | 2023-08-01 | 山西中格矿山机械有限公司 | Impact-resistant and wear-resistant polyurethane plate and preparation method thereof |
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| CN2487501Y (en) * | 2001-05-23 | 2002-04-24 | 霍锦煊 | Composite grinding block |
| CN101228216A (en) * | 2005-07-20 | 2008-07-23 | 株式会社Skc | Polishing pad containing interpenetrating liquified vinyl monomer network with polyurethane matrix therein |
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