CN107124171A - A kind of multiplexer for wireless communication field - Google Patents
A kind of multiplexer for wireless communication field Download PDFInfo
- Publication number
- CN107124171A CN107124171A CN201710305852.5A CN201710305852A CN107124171A CN 107124171 A CN107124171 A CN 107124171A CN 201710305852 A CN201710305852 A CN 201710305852A CN 107124171 A CN107124171 A CN 107124171A
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- Prior art keywords
- oxide
- semiconductor
- metal
- multiplexer
- drain electrode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/002—Switching arrangements with several input- or output terminals
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Abstract
The invention discloses a kind of multiplexer for wireless communication field, it includes：Supply voltage, output resistance R1 and R2, metal-oxide-semiconductor T1 T9, MOS conducting is controlled by being connected to the control signal of metal-oxide-semiconductor, so as to control the output of multiplexer.The multiplexer of the present invention improves the defect of traditional multiplexer, and noise is reduced while operating efficiency is improved.
Description
Technical field
The present invention relates to wireless communication technology field, and in particular to a kind of multiplexer.
Background technology
The background of related to the present invention is illustrated below, but these explanations might not constitute the existing of the present invention
Technology.
In the field of wireless communication, multiplexer is a kind of common device.But there is effect in traditional multiplexer
Rate is low, the big problem of noise, have impact on the operating efficiency of whole system.
The content of the invention
The purpose of the present invention is exactly in order to solve the above problems, so as to propose a kind of multichannel for wireless communication field
Multiplexer, with an improved the defect of traditional multiplexer, the structure of the multiplexer includes：
One supply voltage, connects output resistance R1 and R2 respectively；The wherein leakage of the R1 other end respectively with metal-oxide-semiconductor T5 and T7
Extremely it is connected；Drain electrode of the R2 other end respectively with metal-oxide-semiconductor T6 and T8 is connected；Metal-oxide-semiconductor T5 and T7 source electrode respectively with metal-oxide-semiconductor T1 and
T3 drain electrode is connected, and the drain electrode of metal-oxide-semiconductor T6 and T8 source electrode respectively with metal-oxide-semiconductor T2 and T4 is connected；T1 is connected with T2 source electrode, and
It is commonly connected to metal-oxide-semiconductor T9 drain electrode；The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode；The T9
Source ground；
The grid incoming control signal ctrl1 of the metal-oxide-semiconductor T5 and T6, the grid Access Control of the metal-oxide-semiconductor T7 and T8
Signal ctrl2；Described T1, T2, T3, T4 grid connect input signal p1, n1, p2, n2 respectively；It is inclined that the grid of the T9 connects one
Hold power supply Bias；
When the control signal is high level, the metal-oxide-semiconductor conducting of the control signal connection, when the control signal is
During low level, the metal-oxide-semiconductor of the control signal connection is not turned on.
Compared with prior art, the beneficial effects of the present invention are：The operating efficiency of multiplexer is improved, and is reduced
Noise.
Brief description of the drawings
By the embodiment part of offer referring to the drawings, the features and advantages of the present invention will become more
It is readily appreciated that, in the accompanying drawings：
Fig. 1 is the structural representation of multiplexer proposed by the present invention；
Embodiment
The illustrative embodiments to the present invention are described in detail with reference to the accompanying drawings.Illustrative embodiments are retouched
State merely for the sake of demonstration purpose, and be definitely not to the present invention and its application or the limitation of usage.
The present invention proposes a kind of multiplexer, and the multiplexer includes：
One supply voltage, connects output resistance R1 and R2 respectively；The wherein leakage of the R1 other end respectively with metal-oxide-semiconductor T5 and T7
Extremely it is connected；Drain electrode of the R2 other end respectively with metal-oxide-semiconductor T6 and T8 is connected；Metal-oxide-semiconductor T5 and T7 source electrode respectively with metal-oxide-semiconductor T1 and
T3 drain electrode is connected, and the drain electrode of metal-oxide-semiconductor T6 and T8 source electrode respectively with metal-oxide-semiconductor T2 and T4 is connected；T1 is connected with T2 source electrode, and
It is commonly connected to metal-oxide-semiconductor T9 drain electrode；The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode；The T9
Source ground；
The grid incoming control signal ctrl1 of the metal-oxide-semiconductor T5 and T6, the grid Access Control of the metal-oxide-semiconductor T7 and T8
Signal ctrl2；Described T1, T2, T3, T4 grid connect input signal p1, n1, p2, n2 respectively；It is inclined that the grid of the T9 connects one
Hold power supply Bias；
When the control signal is high level, the metal-oxide-semiconductor conducting of the control signal connection, when the control signal is
During low level, the metal-oxide-semiconductor of the control signal connection is not turned on.
Optionally, above-mentioned metal-oxide-semiconductor can be NMOS tube or PMOS.
The invention also provides a kind of application method of multiplexer, the multiplexer includes：One supply voltage, point
Lian Jie not output resistance R1 and R2；Wherein drain electrode of the R1 other end respectively with metal-oxide-semiconductor T5 and T7 is connected；R2 other end difference
Drain electrode with metal-oxide-semiconductor T6 and T8 is connected；Drain electrode of metal-oxide-semiconductor T5 and the T7 source electrode respectively with metal-oxide-semiconductor T1 and T3 is connected, metal-oxide-semiconductor T6
Drain electrode with T8 source electrode respectively with metal-oxide-semiconductor T2 and T4 is connected；T1 is connected with T2 source electrode, and is commonly connected to metal-oxide-semiconductor T9's
Drain electrode；The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode；The source ground of the T9；
The grid incoming control signal ctrl1 of the metal-oxide-semiconductor T5 and T6, the grid Access Control of the metal-oxide-semiconductor T7 and T8
Signal ctrl2；Described T1, T2, T3, T4 grid connect input signal p1, n1, p2, n2 respectively；It is inclined that the grid of the T9 connects one
Hold power supply Bias；
It is high level to set control signal ctrl1, and control signal ctrl2 is low level so that multiplexer output
Signal be (p1, n1)；
It is low level to set control signal ctrl1, and control signal ctrl2 is high level so that multiplexer output
Signal be (p2, n2).
Although with reference to illustrative embodiments, invention has been described, but it is to be understood that the present invention does not limit to
The embodiment that Yu Wenzhong is described in detail and shown, in the case of without departing from claims limited range, this
Art personnel can make various changes to the illustrative embodiments.
Claims (2)
1. a kind of multiplexer for wireless communication field, it is characterised in that the multiplexer includes：
One supply voltage, connects output resistance R1 and R2 respectively；The wherein drain electrode phase of the R1 other end respectively with metal-oxide-semiconductor T5 and T7
Even；Drain electrode of the R2 other end respectively with metal-oxide-semiconductor T6 and T8 is connected；Metal-oxide-semiconductor T5 and T7 source electrode respectively with metal-oxide-semiconductor T1 and T3
Drain electrode is connected, and the drain electrode of metal-oxide-semiconductor T6 and T8 source electrode respectively with metal-oxide-semiconductor T2 and T4 is connected；T1 is connected with T2 source electrode, and jointly
It is connected to metal-oxide-semiconductor T9 drain electrode；The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode；The leakage of the T9
Pole is grounded；
The grid incoming control signal ctrl1 of the metal-oxide-semiconductor T5 and T6, the grid incoming control signal of the metal-oxide-semiconductor T7 and T8
ctrl2；Described T1, T2, T3, T4 grid connect input signal p1, n1, p2, n2 respectively；The grid of the T9 connects described bigoted
Power supply Bias.
2. multiplexer according to claim 1, it is characterised in that when the control signal is high level, the control
The metal-oxide-semiconductor conducting of signal connection processed, when the control signal is low level, the metal-oxide-semiconductor of the control signal connection is not turned on.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710305852.5A CN107124171A (en) | 2017-05-04 | 2017-05-04 | A kind of multiplexer for wireless communication field |
| CN201710663727.1A CN107453743A (en) | 2017-05-04 | 2017-05-04 | A kind of application method of wireless communication field multiplexer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710305852.5A CN107124171A (en) | 2017-05-04 | 2017-05-04 | A kind of multiplexer for wireless communication field |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710663727.1A Division CN107453743A (en) | 2017-05-04 | 2017-05-04 | A kind of application method of wireless communication field multiplexer |
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| Publication Number | Publication Date |
|---|---|
| CN107124171A true CN107124171A (en) | 2017-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710663727.1A Pending CN107453743A (en) | 2017-05-04 | 2017-05-04 | A kind of application method of wireless communication field multiplexer |
| CN201710305852.5A Pending CN107124171A (en) | 2017-05-04 | 2017-05-04 | A kind of multiplexer for wireless communication field |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710663727.1A Pending CN107453743A (en) | 2017-05-04 | 2017-05-04 | A kind of application method of wireless communication field multiplexer |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110254595A1 (en) * | 2010-04-20 | 2011-10-20 | Mstar Semiconductor, Inc. | Flip-Flop and Frequency Dividing Circuit with Flip-Flop |
| US20120313688A1 (en) * | 2011-06-09 | 2012-12-13 | Shukh Alexander M | Nonvolatile Multiplexer Circuit |
| CN205883169U (en) * | 2016-08-05 | 2017-01-11 | 成都维星科技有限公司 | Low noise amplifier |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6310509B1 (en) * | 1998-12-08 | 2001-10-30 | Triquint Semiconductor, Inc. | Differential multiplexer with high bandwidth and reduced crosstalk |
| US8472884B2 (en) * | 2010-09-09 | 2013-06-25 | Texas Instruments Incorporated | Terahertz phased array system |
| US9479270B2 (en) * | 2013-03-13 | 2016-10-25 | Analog Devices, Inc. | Apparatus and methods for loss of signal detection |
-
2017
- 2017-05-04 CN CN201710663727.1A patent/CN107453743A/en active Pending
- 2017-05-04 CN CN201710305852.5A patent/CN107124171A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110254595A1 (en) * | 2010-04-20 | 2011-10-20 | Mstar Semiconductor, Inc. | Flip-Flop and Frequency Dividing Circuit with Flip-Flop |
| US20120313688A1 (en) * | 2011-06-09 | 2012-12-13 | Shukh Alexander M | Nonvolatile Multiplexer Circuit |
| CN205883169U (en) * | 2016-08-05 | 2017-01-11 | 成都维星科技有限公司 | Low noise amplifier |
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| Publication number | Publication date |
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| CN107453743A (en) | 2017-12-08 |
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Application publication date: 20170901 |