CN107117588A - The preparation method of tellurium target - Google Patents
The preparation method of tellurium target Download PDFInfo
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- CN107117588A CN107117588A CN201710303585.8A CN201710303585A CN107117588A CN 107117588 A CN107117588 A CN 107117588A CN 201710303585 A CN201710303585 A CN 201710303585A CN 107117588 A CN107117588 A CN 107117588A
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- Prior art keywords
- tellurium
- preparation
- vacuum hotpressing
- hotpressing stove
- tellurium target
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/02—Elemental selenium or tellurium
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Powder Metallurgy (AREA)
Abstract
The present invention relates to a kind of preparation method of tellurium target, comprise the following steps：S1：Tellurium is prepared into minus 325 mesh powder；S2：Telloy is fitted into a mould, and mould is put into vacuum hotpressing stove, to powder precompressed；S3：Vacuum hotpressing stove is vacuumized after precompressed, vacuum hotpressing stove opens heating, and 300~400 DEG C are warming up to certain heating rate, and is incubated, and soaking time is T1；S4：Vacuum hotpressing stove cools, and after temperature drops to 150~200 DEG C, pressure is reduced to 20~25 Mpa；S5：Vacuum hotpressing stove continues to cool, after temperature drops to room temperature, blow-on door, after the pressure release demoulding, obtains tellurium target.The preparation method step of tellurium target of the present invention is simple, and the consistency of preparation-obtained tellurium target is high, is sufficiently close to the theoretical consistency of tellurium target, is a kind of method being worthy to be popularized for preparing tellurium target.
Description
Technical field
The present invention relates to a kind of preparation method of target, more particularly to a kind of preparation method of tellurium target.
Background technology
Tellurium has crystal and noncrystal two kinds of allotropes.Noncrystal tellurium is black powder, and crystal tellurium is silvery white.Tellurium is simultaneous
Has metallicity and the characteristic of nonmetal character, metalline is stronger than sulphur and selenium；Tellurium is mainly used as preparing alloy and semi-conducting material.Tellurium
And its many alloys and intermetallic compound all have semiconducting behavior and thermoelectric performance.The film of tellurium is in rufous to purple
Color, can be not through visible ray through infrared ray, be also commonly used for film photovoltaic and electronics industry.
Target is to be sputtered by magnetron sputtering, multi-arc ion coating or other kinds of coating system under appropriate process conditions
The sputtering source of various functions film is formed on substrate, the consistency of target has a great impact to the quality of film, not yet had
The prior art for being related to the preparation method of tellurium target is known to the public.
It is contemplated that inventing a kind of preparation method of the big tellurium target of consistency.
The content of the invention
It is an object of the invention to provide a kind of preparation method of the big tellurium target of consistency.
To realize object defined above, the present invention is adopted the following technical scheme that：A kind of preparation method of tellurium target, including following step
Suddenly：
S1：Tellurium is prepared into minus 325 mesh powder；
S2：Telloy is fitted into a mould, and mould is put into vacuum hotpressing stove, to powder precompressed；
S3：Vacuum hotpressing stove is vacuumized after precompressed, vacuum hotpressing stove opens heating, is warming up to certain heating rate
300~400 DEG C, and be incubated, soaking time is T1；
S4：Vacuum hotpressing stove cools, and after temperature drops to 150~200 DEG C, pressure is reduced to 20~25 Mpa；
S5：Vacuum hotpressing stove continues to cool, after temperature drops to room temperature, blow-on door, after the pressure release demoulding, obtains tellurium target.
As a further improvement on the present invention, in the S3, including S31：After maximum temperature is warming up to, when being incubated one section
Between T2, start to pressurize and keep a period of time T3.
As a further improvement on the present invention, the heating rate of the S31 be 2~10 DEG C/min, soaking time T2 be 1~
3h。
As a further improvement on the present invention, in the S31, moulding pressure be 40~60Mpa, retention time T3 be 20~
40min。
As a further improvement on the present invention, in the S2, preload pressure is 20~35Mpa.
As a further improvement on the present invention, in the S3, soaking time T1 is 5~10min.
As a further improvement on the present invention, in the S1, vacuumize until Absolute truth reciprocal of duty cycle is less than 10pa.
As a further improvement on the present invention, the mould is graphite jig.
The preparation method step of tellurium target of the present invention is simple, and the consistency of preparation-obtained tellurium target is high, is sufficiently close to tellurium target
Theoretical consistency, be a kind of method being worthy to be popularized for preparing tellurium target.
Embodiment
Technical scheme is clearly and completely described below in conjunction with the embodiment of the present invention, it is clear that described implementation
Example only a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, this area is common
The every other embodiment that technical staff is obtained under the premise of creative work is not made, belongs to the model that the present invention is protected
Enclose.
A kind of preparation method of tellurium target, comprises the following steps：
S1：Tellurium is prepared into minus 325 mesh powder；
S2：Telloy is fitted into a mould, and mould is put into vacuum hotpressing stove, to powder precompressed；
S3：Vacuum hotpressing stove is vacuumized after precompressed, vacuum hotpressing stove opens heating, is warming up to certain heating rate
300~400 DEG C, and be incubated, soaking time is T1；
S4：Vacuum hotpressing stove cools, and after temperature drops to 150~200 DEG C, pressure is reduced to 20~25 Mpa；
S5：Vacuum hotpressing stove continues to cool, after temperature drops to room temperature, blow-on door, after the pressure release demoulding, obtains tellurium target.
In certain embodiments of the present invention, in the S3, including S31：After maximum temperature is warming up to, when being incubated one section
Between T2, start to pressurize and keep a period of time T3.
In certain embodiments of the present invention, the heating rate of the S31 be 2~10 DEG C/min, soaking time T2 be 1~
3h。
In certain embodiments of the present invention, in the S31, moulding pressure be 40~60Mpa, retention time T3 be 20~
40min。
In certain embodiments of the present invention, in the S2, preload pressure is 20~35Mpa.
In certain embodiments of the present invention, in the S3, soaking time T1 is 5~10min.
In certain embodiments of the present invention, in the S1, vacuumize until Absolute truth reciprocal of duty cycle is less than 10pa.
In certain embodiments of the present invention, the mould is graphite jig.
Embodiment 1.
The preparation of tellurium target is followed the steps below.
1st, tellurium is prepared into minus 325 mesh powder.
2nd, tellurium powder is fitted into a graphite jig, and graphite jig is put into vacuum hotpressing stove, to powder precompressed, pressurization
Pressure is 25Mpa.
3rd, hot pressing furnace is vacuumized after precompressed, after vacuum reaches 5pa, vacuum hotpressing stove opens heating, with 10
DEG C/min is warming up to 300 DEG C, is incubated 1h, wherein, after 300 DEG C of maximum temperature is warming up to, after insulation 10min, start pressurization, plus
Pressure pressure is 60Mpa, keeps 30min.
4th, vacuum hotpressing stove cools, and after temperature drops to 190 DEG C, pressure is reduced to 20Mpa.
5th, vacuum hotpressing stove continues to cool, after temperature drops to room temperature, blow-on door, after the pressure release demoulding, obtains tellurium target.
The consistency of tellurium target is detected with drainage, the actual consistency of tellurium target is the 98.0% of theoretical consistency.
Embodiment 2.
The preparation of tellurium target is followed the steps below.
1st, tellurium is prepared into minus 325 mesh powder.
2nd, tellurium powder is fitted into a graphite jig, and graphite jig is put into vacuum hotpressing stove, to powder precompressed, pressurization
Pressure is 35Mpa.
3rd, hot pressing furnace is vacuumized after precompressed, after vacuum reaches 10pa, vacuum hotpressing stove opens heating, with 5
DEG C/min is warming up to 350 DEG C, is incubated 2h, wherein, after 350 DEG C of maximum temperature is warming up to, after insulation 5min, start pressurization, plus
Pressure pressure is 40Mpa, keeps 20min.
4th, vacuum hotpressing stove cools, and after temperature drops to 200 DEG C, pressure is reduced to 22Mpa.
5th, vacuum hotpressing stove continues to cool, after temperature drops to room temperature, blow-on door, after the pressure release demoulding, obtains tellurium target.
The consistency of tellurium target is detected with drainage, the actual consistency of tellurium target is the 98.5% of theoretical consistency.
Embodiment 3.
1st, tellurium is prepared into minus 325 mesh powder.
2nd, telloy is fitted into a graphite jig, and graphite jig is put into vacuum hotpressing stove to powder precompressed, plus
Pressure pressure 20Mpa.
3rd, vacuum hotpressing stove is vacuumized after precompressed, after vacuum reaches 9pa, vacuum hotpressing stove opens heating,
400 DEG C are warming up to 8 DEG C/min, are incubated 2h, wherein, after 400 DEG C of maximum temperature is warming up to, after insulation 8min, start pressurization,
Moulding pressure is 50Mpa, keeps 40min.
4th, vacuum hotpressing stove cools, and will be 25 Mpa pressure after temperature drops to 200 DEG C.
5th, vacuum hotpressing stove continues to cool, after temperature drops to room temperature, blow-on door, after the pressure release demoulding, obtains tellurium target.
The consistency of tellurium target is detected with drainage, the actual consistency of tellurium target is the 97.8% of theoretical consistency.
The preparation method step of tellurium target of the present invention is simple, and the consistency of preparation-obtained tellurium target is high, is sufficiently close to tellurium target
Theoretical consistency, be a kind of method being worthy to be popularized for preparing tellurium target.
Although for example purpose, having been disclosed for the preferred embodiment of the present invention, the ordinary skill people of this area
Member will realize in the case of scope and spirit of the present invention disclosed in not departing from by appended claims, various to change
It is possible for entering, increasing and replacing.
Claims (8)
1. a kind of preparation method of tellurium target, it is characterised in that：Comprise the following steps：
S1：Tellurium is prepared into minus 325 mesh powder；
S2：Telloy is fitted into a mould, and mould is put into vacuum hotpressing stove, to powder precompressed；
S3：Vacuum hotpressing stove is vacuumized after precompressed, vacuum hotpressing stove opens heating, is warming up to certain heating rate
300~400 DEG C, and be incubated, soaking time is T1；
S4：Vacuum hotpressing stove cools, and after temperature drops to 150~200 DEG C, pressure is reduced to 20~25 Mpa；
S5：Vacuum hotpressing stove continues to cool, after temperature drops to room temperature, blow-on door, after the pressure release demoulding, obtains tellurium target.
2. the preparation method of the tellurium target according to claim 1, it is characterised in that：In the S3, including S31：When being warming up to
After maximum temperature, a period of time T2 is incubated, starts to pressurize and keeps a period of time T3.
3. the preparation method of the tellurium target according to claim 2, it is characterised in that：The heating rate of the S31 is 2~10
DEG C/min, soaking time T2 is 1~3h.
4. the preparation method of the tellurium target according to claim 2, it is characterised in that：In the S31, moulding pressure be 40~
60Mpa, retention time T3 are 20~40min.
5. the preparation method of tellurium target according to claim 1, it is characterised in that：In the S2, preload pressure be 20~
35Mpa。
6. the preparation method of the tellurium target according to claim 1, it is characterised in that：In the S3, soaking time T1 be 5~
10min。
7. the preparation method of the tellurium target according to claim 1, it is characterised in that：In the S1, vacuumize until Absolute truth
Reciprocal of duty cycle is less than 10pa.
8. the preparation method of the tellurium target according to claim 1, it is characterised in that：The mould is graphite jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710303585.8A CN107117588A (en) | 2017-05-03 | 2017-05-03 | The preparation method of tellurium target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710303585.8A CN107117588A (en) | 2017-05-03 | 2017-05-03 | The preparation method of tellurium target |
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| Publication Number | Publication Date |
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| CN107117588A true CN107117588A (en) | 2017-09-01 |
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ID=59728013
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| CN201710303585.8A Pending CN107117588A (en) | 2017-05-03 | 2017-05-03 | The preparation method of tellurium target |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102398035A (en) * | 2011-11-25 | 2012-04-04 | 宁波江丰电子材料有限公司 | Nickel target blank and target method manufacturing methods |
| CN102423802A (en) * | 2011-12-20 | 2012-04-25 | 宁波江丰电子材料有限公司 | Preparation method of highly-pure cobalt target |
| CN104152851A (en) * | 2014-08-15 | 2014-11-19 | 浙江工贸职业技术学院 | Method for manufacturing tellurium elementary substance nano materials of controllable structure |
| CN105525260A (en) * | 2014-10-22 | 2016-04-27 | 宁波江丰电子材料股份有限公司 | Production methods of Mo target blank and Mo target material |
-
2017
- 2017-05-03 CN CN201710303585.8A patent/CN107117588A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102398035A (en) * | 2011-11-25 | 2012-04-04 | 宁波江丰电子材料有限公司 | Nickel target blank and target method manufacturing methods |
| CN102423802A (en) * | 2011-12-20 | 2012-04-25 | 宁波江丰电子材料有限公司 | Preparation method of highly-pure cobalt target |
| CN104152851A (en) * | 2014-08-15 | 2014-11-19 | 浙江工贸职业技术学院 | Method for manufacturing tellurium elementary substance nano materials of controllable structure |
| CN105525260A (en) * | 2014-10-22 | 2016-04-27 | 宁波江丰电子材料股份有限公司 | Production methods of Mo target blank and Mo target material |
Non-Patent Citations (1)
| Title |
|---|
| 华北电力大学太阳能研究中心: "《光伏产业技术路线图》", 30 November 2011 * |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20181127 Address after: 511517 D Workshop of Qingyuan Pioneer Materials Co., Ltd. No. 27-9 Baijia Industrial Park, Qingyuan High-tech Zone, Guangdong Province Applicant after: Pilot film material (Guangdong) Co., Ltd. Address before: 511517 27-9B, Guangdong Qingyuan hi tech Industrial Park Applicant before: Qingyuan Xiandao Materials Co., Ltd. |
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Application publication date: 20170901 |
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