CN107117578A - A kind of non-brake method Two-color Infrared Detectors MEMS chip and its manufacture method - Google Patents
A kind of non-brake method Two-color Infrared Detectors MEMS chip and its manufacture method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000012545 processing Methods 0.000 claims abstract description 21
- 238000012360 testing method Methods 0.000 claims abstract description 7
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 238000003491 array Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 192
- 229910052751 metal Inorganic materials 0.000 claims description 102
- 239000002184 metal Substances 0.000 claims description 102
- 239000011241 protective layer Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 18
- 238000001259 photo etching Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004380 ashing Methods 0.000 claims description 3
- 230000000994 depressogenic effect Effects 0.000 claims description 3
- 238000005546 reactive sputtering Methods 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 15
- 238000001514 detection method Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- VMXUWOKSQNHOCA-UKTHLTGXSA-N ranitidine Chemical compound [O-][N+](=O)\C=C(/NC)NCCSCC1=CC=C(CN(C)C)O1 VMXUWOKSQNHOCA-UKTHLTGXSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 101100272279 Beauveria bassiana Beas gene Proteins 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00103—Structures having a predefined profile, e.g. sloped or rounded grooves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
- G01J2005/204—Arrays prepared by semiconductor processing, e.g. VLSI
Abstract
The present invention relates to a kind of non-brake method Two-color Infrared Detectors MEMS chip, it is divided into four regions arranged in arrays：First and third region and second, four regions, first and third region and second, four regions form highly different resonators, and the different temperature-sensitive layer film of sheet resistance value is sputtered thereon, the infrared energy of different-waveband can be preferably absorbed, electrical signal is then converted into and carries out processing progress image output.The invention further relates to a kind of method for preparing said chip, it is included in first and third region and the step of second, four regions make the resonator of different height respectively, the step of sputter different sheet resistance value temperature-sensitive layer films respectively and the step of packaging and testing, the chip can works under ultralow temperature (80 DEG C~60 DEG C) environment and be worked with superhigh temperature (85 DEG C~100 DEG C) environment.
Description
Technical field
The present invention relates to a kind of non-brake method Two-color Infrared Detectors MEMS chip and its manufacture method, belong to non-brake method red
External detector field.
Background technology
Non-refrigerated infrared detector (uncooled infrared bolometer) in addition to the application in military field,
It is widely used in civil area, such as fire-fighting, automobile auxiliary, forest fire protection, field detection, environmental protection field.
Original non-refrigerating infrared focal plane (Uncooled IRFPA) chip, is single colored chip, there is presently no double-colored
Infrared detector chip is integrated on a single die, main reason is that different infrared band, it is desirable to resonator highly differ
Cause, traditional process and structure can not be integrated；The vanadium oxide film sheet resistance of single colored chip deposition is same numerical value, is led
Its operating temperature range is caused to be limited, the operating temperature range of normal regulating is -40 DEG C~85 DEG C, actually two in high/low temperature
End, image quality produces influence because of vanadium oxide resistance variation, causes the amplification of surface non-uniformities or by the negative of bridge leg resistance
Influence and cause image quality to reduce, and the difficulty of pattern algorithm can be increased.
Non-refrigerated infrared detector, main two wave band windows using infra-red radiation, one is 8~14 microns remote red
Wave section, also referred to as infrared first atmospheric electricity area；Another is 3~5 microns of wave band, referred to as infrared second atmospheric electricity area,
That is middle-infrared band.3-5 micron wave lengths it is infrared belong in it is infrared, advantage is to be more suitable for such as more than 500 degree of measurement high temperature material
Temperature, and this kind of thermal imaging system price is very high；And 8-14 microns of LONG WAVE INFRAREDs are not substantially decayed substantially in an atmosphere, survey
Accuracy of measurement is influenceed very little by distance, and far and near distance measurement is all well suited for, and temperature-measuring range is also relatively wide.
Because infrared system uses the difference in region, the change of climate temperature, the camouflage of target, the release of infrared decoy
Etc. reason, the information decrease that the IRDS of monochrome is obtained may result in.Particularly when the target temperature in motion occurs
During change, its infra-red radiation peak wavelength will be moved, and infrared spy device detection accuracy will be caused significantly to decline, or even very
Possibly it can not detect.
In addition, change of the non-refrigerated infrared detector due to ambient climate temperature, high/low temperature working environment (85 DEG C or-
40 DEG C) near, processing of circuit signal is influenceed by the resistance non-uniformity or bridge leg resistance of detector, image quality or performance meeting
It is imaged and lowers with respect to normal temperature.It is preferably red in order to ensure near high/low temperature (85 DEG C or -40 DEG C) working environment, remaining to obtain
Outer image output, it is to avoid the influence of the resistance non-uniformity or bridge leg resistance of the working environment influence detector of high/low temperature, it is ad hoc
Intersect two of meter can play the detector of optimum performance, and one is adapted to be operated in -20 DEG C~100 DEG C, one be adapted to -60 DEG C~
60 DEG C of detector, the two detectors carry out complementation in high/low temperature, and according to ambient temperature, program automatically selects one
Or two chip even four chips are operated, and optimal graphical quality is exported after receiving infrared signal simultaneously.
The content of the invention
The present invention is big there is provided a kind of operating temperature range for above-mentioned the deficiencies in the prior art, and different is infrared
Wave band carries out the non-brake method Two-color Infrared Detectors MEMS chip of optimal imaging.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：A kind of non-brake method Two-color Infrared Detectors MEMS cores
Piece, including one carry ASIC (Application Specific Integrated Circuit:Application specific integrated circuit) substrate
With a detector with microbridge supporting construction, the detector is electrically connected with the ASIC circuit of the Semiconductor substrate, described
Detector is divided into four regions arranged in arrays, respectively first area, second area, the 3rd region and the 4th region；
The detector includes the metallic reflector and insulating medium layer on the substrate, if the metallic reflector includes
The metal derby of dry matrix arrangement, the thickness of first and third region insulation dielectric layer is more than second, four-range insulating medium layer,
The first and third region insulation dielectric layer is provided with several metal electrodes, and the metal electrode passes through through described first and third
The connection metal of region insulation dielectric layer is connected with the metallic reflector；
Supporting layer, temperature-sensitive are sequentially provided with the metal electrode in first and third region and second, four-range metal derby
Layer, the first protective layer, the area of the heat-sensitive layer are less than the area of the supporting layer, the heat-sensitive layer in first and third region
Several contact holes are provided with sheet resistance 200K Ω ± 20K Ω higher than the second four-range sheet resistance value, first protective layer, it is described
The lower end of contact hole terminates at the heat-sensitive layer；
Through hole is additionally provided with first protective layer, the through hole passes through first protective layer and the supporting layer,
Terminate at second, four-range metal derby or the metal electrode in the one or three region；
Electrode metal is full of in the through hole and the contact hole, the electrode metal and the first protective layer are provided with second
Protective layer, the heat-sensitive layer is electrically connected with the electrode metal.
Further, the supporting layer is silicon oxide film, and the heat-sensitive layer is vanadium oxide or titanium oxide, first protection
Layer and the second protective layer are silicon nitride film.
Further, the insulating medium layer is silica, and its thickness is
Further, the connection metal is depressed place.
A kind of beneficial effect of non-brake method Two-color Infrared Detectors MEMS chip is in the present invention：Two-color Infrared Detectors core
Piece, because incorporating ASIC (Application Specific Integrated Circuit:Application specific integrated circuit) circuit can
Conversion is synchronized to mid-infrared and far-infrared light electric signal, it is ensured that the signal of two infrared band windows does not have the time difference, accomplishes synchronization
Output, is truly realized synchronizing detection target, obtains preferable infrared image, can detect more real object, it is to avoid infrared
Camouflage or Infrared jamming.The application of its infrared detector is expanded, high/low temperature material, aerial mesh can be preferably detected simultaneously
Mark, is also radiated for detecting atural object itself simultaneously, the multi-field application such as night infrared scanning imagery.
In addition, Two-color Infrared Detectors chip, the volume being packaged together and area are integrated more than individually several chips
Small, power consumption is also lower, and circuit part can be integrated shared, and the selection control in region is simply operated to array, can individually or together
When be operated some or several array regions, significantly reduce the power consumption of device.Device encapsulation is reduced simultaneously
Difficulty, reduces the volume and weight of movement, beneficial to portable application and reduces cost.
Can be carried out for different infrared bands (infrared in such as 3~5 microns or 8~14 microns of far infrareds) it is optimal into
Picture, manufactures double-colored chip, and different chips use different vanadium oxide film sheet resistances, have reached what is changed in temperature operating conditions
In the case of, the detector for automatically selecting suitable this temperature range work is operated, and the image quality of film is maintained most
It is good, while extending the operating temperature range of device, or even less than -40 DEG C, higher than 85 DEG C, it can obtain preferably being imaged matter
Amount.
The invention further relates to a kind of manufacture method for manufacturing above-mentioned non-refrigerated infrared detector MEMS chip,
Step 1. deposits layer of metal reflecting layer on the substrate comprising ASIC circuit, and the metallic reflector is carried out
Metallic reflector after graphical treatment, graphical treatment includes the metal derby of matrix arrangement；
Step 2. deposits insulating medium layer on metallic reflector, and the insulating medium layer is chemically-mechanicapolish polished
Handle (CMP) processing；
Step 3. is using photoetching and the method etched, in first and third region, the detector pixel interface electrode of correspondence array
Correspondence position on etch connecting hole, in the connecting hole deposition connection metal；
Step 4. deposit metal electrodes layer on first and third region insulation dielectric layer, and figure is carried out to metal electrode layer
Change is handled, and the metal electrode layer after graphical treatment forms the metal electrode of several matrix arrangements, and metal electrode and institute
State connection metal to correspond, the metal electrode is detector pixel interface electrode；
Step 5. photoetching and etching second area and four-range insulating medium layer, etch-stop metallic reflector it is upper
End face；
Step 6. is sprayed on the metal electrode layer after graphical and second after etching, four-range insulating medium layer
First sacrifice layer, second, the upper surface of the sacrifice layer of four-range first and the insulation of the process CMP processing in first and third region are situated between
The upper surface of matter layer is concordant；
Step 7., by the first sacrifice layer plasma ashing in first and third region, is gone using the method for photoetching and etching
Except the first sacrifice layer in first and third region, CMP processing is carried out afterwards；
It is sacrificial that step 8. coats second on the insulating medium layer in first and third region and the sacrifice layer of second, four-range first
Domestic animal layer；
The sacrifice layer of step 9. pair second and the first sacrifice layer are patterned processing, it is graphical after in first area and the
The first anchor point hole is formed on three regions, the first anchor point hole terminates at the metal electrode, in second area and the 4th region
The second anchor point hole of upper formation, the second anchor point hole terminates at the metal derby；
Step 10. depositing support layer on the first sacrifice layer and the second sacrifice layer after graphical treatment；
Step 11. is using lift-off process (stripping technology), respectively in first and third region and second, four regions
Supporting layer on reactive sputtering heat-sensitive layer respectively, and the temperature-sensitive layer film in first and third region is thinner than second, four-range heat-sensitive layer
The high 200K Ω ± 20K Ω of sheet resistance value of film；
Step 12. deposits the first protective layer on heat-sensitive layer and supporting layer.
Step 13. is in the first anchor point hole and the bottom in the second anchor point hole, using the method for photoetching and etching, etches away described
First protective layer and supporting layer, respectively terminate in the metal electrode and second, four-range metal derby, form through hole；
Step 14. is on the first protective layer above heat-sensitive layer, using the method for photoetching and etching, etches away first, guarantor
Sheath, terminates at the heat-sensitive layer, forms contact hole；
Step 15. depositing electrode metal in through hole and contact hole, the sheet resistance of the electrode metal is 5~50 Ω；
Step 16. deposits the second protective layer on electrode metal layer；
Step 17. carries out the isolation pattern of self-registered technology to each pixel using the method for photoetching and etching；
Step 18. structure release, scribing release is carried out to chip, and the first sacrifice layer and the second sacrifice layer are discharged clean,
Form resonator.
A kind of beneficial effect of the manufacture method of non-brake method Two-color Infrared Detectors MEMS chip is in the present invention：To detection
Device array functional region is divided, and realizes the division of non-brake method Two-color Infrared Detectors MEMS chip；First and third region and
2nd, four regions form the infrared resonance chamber of two different heights, and top is in same elevation plane, can absorb different ripples
Long infrared band；First and third region is different with the sheet resistance value of second, four-range vanadium oxide film, and sheet resistance value is low to be can use
Worked under ultralow temperature (- 80 DEG C~-60 DEG C) environment, sheet resistance it is high can be used for superhigh temperature (85 DEG C~100 DEG C) environment under work.
In addition, incorporating ASIC circuit, conversion can be synchronized to mid-infrared and far-infrared light electric signal, it is ensured that two infrared bands
The signal of window does not have the time difference, accomplishes synchronism output, is truly realized synchronizing detection target, obtains preferable infrared image, energy
Detect more real object, it is to avoid infrared camouflage or Infrared jamming, expand the application of its infrared detector, can be simultaneously
High/low temperature material is preferably detected, aerial target is also radiated for detecting atural object itself simultaneously, and night infrared scanning imagery etc. is more
The application in field.
Further, in addition to step 19. packaging and testing, detector test encapsulation is manufactured into movement or complete machine, and selection is suitable
Environment temperature, infrared and two detectors of far infrared are operated can allow simultaneously in, or even four detectors work together.
Beneficial effect using above-mentioned further technical scheme is：In infrared or far infrared deterctor simultaneously observe to one
Individual target is observed, and is improved the validity of detection target, resolution ratio and reliability, can be detected more real object, it is to avoid
Infrared camouflage or Infrared jamming.
Further, the insulating medium layer is silica, and the insulating medium layer thickness deposited in step 2 is
Further, in step 3, in the connecting hole after deposition connection metal, the connection metal is carried out at CMP
Reason, and CMP processing is carried out to second area and four-range insulating medium layer.
Further, the heat-sensitive layer thickness existsBetween.
Further, the thickness of first sacrifice layerThe second sacrifice layer polyimides is thick
Spend and be
Further, the thickness of first protective layer and second protective layer is
Brief description of the drawings
Fig. 1 is the division schematic diagram of ASIC circuit array region of the present invention；
Fig. 2 is present invention deposition insulating medium layer schematic diagram；
Fig. 3 carries out the schematic diagram after CMP processing to insulating medium layer for the present invention；
Fig. 4 is metal electrode of the present invention and metallic reflector connection diagram；
Fig. 5 deposits the schematic diagram of the first sacrifice layer for the present invention；
Fig. 6 carries out the schematic diagram after CMP processing to the first sacrifice layer for the present invention；
Fig. 7 is that anchor point hole of the present invention forms schematic diagram；
Fig. 8 is depositing support of the present invention layer schematic diagram；
Fig. 9 deposits the schematic diagram of heat-sensitive layer for the present invention；
Figure 10 deposits the schematic diagram of the first protective layer for the present invention；
Figure 11 is the schematic diagram of etching vias of the present invention；
Figure 12 etches the schematic diagram of contact hole for the present invention；
Figure 13 is the schematic diagram of the second protective layer of depositing electrode metal of the present invention and deposition；
Figure 14 carries out the isolation pattern schematic diagram of self-registered technology for each pixel of the invention；
Figure 15 is chip structure schematic diagram of the invention；
In the accompanying drawings, the list of designations represented by each label is as follows：1st, first area, 2, second area, the 3, the 3rd
Region, the 4, the 4th region, 5, the substrate containing ASIC circuit, 6, metallic reflector, 7, insulating medium layer, 8, connection metal, 9,
Metal electrode, the 10, first sacrifice layer, the 11, second sacrifice layer, the 12, first anchor point hole, the 13, second anchor point hole, 14, supporting layer,
15th, first and third region heat-sensitive layer, 16, second, four region heat-sensitive layers, the 17, first protective layer, 18, through hole, 19, contact hole, 20,
Electrode metal, the 21, second protective layer.
Embodiment
The principle and feature of a kind of non-brake method Two-color Infrared Detectors MEMS chip in the present invention are entered below in conjunction with accompanying drawing
Row description, the given examples are served only to explain the present invention, is not intended to limit the scope of the present invention.
As shown in Fig. 1 and Figure 15, a kind of non-brake method Two-color Infrared Detectors MEMS chip, including one carry ASIC
(Application Specific Integrated Circuit:Application specific integrated circuit) substrate 5 and one with microbridge support
The detector of structure, the detector is electrically connected with the ASIC circuit of the Semiconductor substrate 5, and the detector is divided into matrix
Four regions of arrangement, respectively first area 1, second area 2, the 3rd region 3 and the 4th region 4；
The detector includes the metallic reflector 6 and insulating medium layer 7 on the substrate, and the metallic reflector 6 is wrapped
The metal derby of several matrix arrangements is included, the thickness of insulating medium layer 7 in first and third region is more than the insulation of second, four-range and is situated between
Matter layer 7, the insulating medium layer 7 in first and third region is provided with several metal electrodes 9, the metal electrode 9 by through
The connection metal 8 of one or the three region insulation dielectric layer is connected with the metallic reflector 6, and the connection metal 8 is depressed place；
Supporting layer 14, heat are sequentially provided with the metal electrode 9 and second in first and third region, four-range metal derby
Photosensitive layer, the first protective layer 17, the area of the heat-sensitive layer are less than the area of the supporting layer 14, the one or the three region heat-sensitive layer
15 sheet resistance than the two or four region heat-sensitive layer 16 the high 200K Ω ± 20K Ω of sheet resistance value, if being provided with first protective layer 17
Dry contact hole 19, the lower end of the contact hole 19 terminates at the heat-sensitive layer；
Through hole 18 is additionally provided with first protective layer 17, the through hole 18 passes through first protective layer 17 and described
Supporting layer 14, terminates at the metal derby or metal electrode 9；
Electrode metal 20, the protective layer 17 of electrode metal 20 and first are full of in the through hole 18 and the contact hole 19
It is provided with the second protective layer 21.
The supporting layer 14 is silicon oxide film, and the heat-sensitive layer is vanadium oxide or titanium oxide, first protective layer 17
It is silicon nitride film with the second protective layer 21.
A kind of operation principle of non-brake method Two-color Infrared Detectors MEMS chip is as follows in the present invention：
The infrared ray of different wave length, is adapted to different measurement temperatures, causes the film of first and third region heat-sensitive layer 15 or the
2nd, the resistance of four region heat-sensitive layers 16 changes, and first and third region passes through electrode metal 20, metal electrode 9, connection metal
8th, the ASIC circuit that metallic reflector 6 is passed the signal along in Semiconductor substrate 5, second, four regions pass through electrode metal 20, gold
The ASIC circuit that category reflecting layer 6 is passed the signal along in Semiconductor substrate 5, optimal imaging is carried out by data processing.
It is right below in conjunction with the accompanying drawings the invention further relates to the manufacture method of above-mentioned non-brake method Two-color Infrared Detectors MEMS chip
The principle and feature of the present invention is described, and the given examples are served only to explain the present invention, is not intended to limit the scope of the present invention.
A kind of manufacture method of non-brake method Two-color Infrared Detectors MEMS chip, comprises the following steps：
Step 1. deposits layer of metal reflecting layer 6 on the substrate comprising ASIC circuit, and to the metallic reflector 6
Being patterned the metallic reflector 6 after processing, graphical treatment includes the metal derby of matrix arrangement；
Step 2. deposits insulating medium layer 7 on metallic reflector 6, and the insulating medium layer 7 is silica, described exhausted
The thickness of edge dielectric layer 7 isAs shown in Fig. 2 and to the insulating medium layer 7 carry out CMP processing, remove thickness beAs shown in Figure 3；
Step 3. is using photoetching and the method etched, in first and third region, the detector pixel interface electrode of correspondence array
Correspondence position on etch connecting hole, in the connecting hole deposition connection metal 8；To second, four-range insulating medium layer 7
CMP processing is carried out, removing the second, thickness of four-range insulating medium layer 7 isTo the connection gold in first and third region
Belong to and carry out CMP processing, and remove thickness and beFirst and third region insulation dielectric layer 7；
Step 4. deposit metal electrodes layer on first and third region insulation dielectric layer 7, and figure is carried out to metal electrode layer
Change is handled, and the metal electrode layer after graphical treatment forms the metal electrode 9 of several matrix arrangements, and metal electrode 9 with
The connection metal 8 is corresponded, and the metal electrode 9 is detector pixel interface electrode；
Step 5. photoetching and etching second, four-range insulating medium layer 7, until exposing metallic reflector 6, such as Fig. 4 institutes
Show；
Metal electrode layer of the step 6. after graphical and second area and four-range dielectric after etching
The first sacrifice layer 10 is sprayed on layer 7, first sacrifice layer 10 is polyimides, and the thickness of first sacrifice layer 10 isAs shown in Figure 5；
Step 7. is using photoetching and the method etched, by the plasma of the first sacrifice layer 10 in first area and the 3rd region
Body is ashed, and CMP processing is carried out afterwards, as shown in Figure 6；
Step 8. coats the second sacrifice layer 11, second sacrifice layer 11 on the first sacrifice layer 10 after plasma ashing
For polyimides, its thickness is
Step 9. pair the second sacrifice layer 11 and the first sacrifice layer 10 are patterned processing, graphical afterwards in first area
With the first anchor point hole 12 is formed on the 3rd region, the hole of the first anchor point 12 terminates at the metal electrode 9, in second area and
The second anchor point hole 13 is formed on 4th region, the second anchor point hole 13 terminates at the metal derby, as shown in Figure 7；
Step 10. depositing support layer 14, institute on the first sacrifice layer 10 and the second sacrifice layer 11 after graphical treatment
Supporting layer 14 is stated for silicon nitride film, as shown in Figure 8；
Step 11. is using lift-off process (stripping technology), respectively in first and third region and second, four regions
Supporting layer 14 on reactive sputtering temperature-sensitive layer film, the heat-sensitive layer thickness exists Between, first and third region
The film of heat-sensitive layer 15 is than the high 200K Ω ± 20K Ω of sheet resistance value of second, the film of four-range heat-sensitive layer 16, different sheet resistance values,
Worked available for ultralow temperature or superhigh temperature；, as shown in Figure 9
Step 12. deposits layer protective layer 17 on heat-sensitive layer and supporting layer 14, and the thickness of first protective layer 17 isAs shown in Figure 10.
Step 13., using the method for photoetching and etching, is etched away in the first anchor point hole 12 and the bottom in the second anchor point hole 13
First protective layer 17 and supporting layer 14, respectively terminate in the metal electrode 9 and second, four-range metal derby, are formed
Through hole 18, as shown in figure 11；
Step 14., using the method for photoetching and etching, etches away the first guarantor on the first protective layer 17 above heat-sensitive layer
Sheath 17, terminates at the heat-sensitive layer, forms contact hole 19, as shown in figure 12；
Step 15. depositing electrode metal 20 in through hole 18 and contact hole 19, the sheet resistance of the electrode metal 20 is 5~50
Ω；
Step 16. deposits the second protective layer 21 on electrode metal layer, and the thickness of second protective layer 21 isAs shown in figure 13；
Step 17. carries out the isolation pattern of self-registered technology, such as Figure 14 to each pixel using the method for photoetching and etching
It is shown；
Step 18. structure release, carries out scribing release to chip, the first sacrifice layer 10 and the second sacrifice layer 11 is discharged dry
Only, forming height respectively in first and third region and second, four regions is It is with heightResonator, and top is all in all one elevation plane, as shown in figure 15.
Step 19. packaging and testing, detector test encapsulation is manufactured into movement or complete machine, selects suitable environment temperature, can
Infrared and two detectors of far infrared are operated allow simultaneously in, or even four detectors work together.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (10)
1. a kind of non-brake method Two-color Infrared Detectors MEMS chip, it is characterised in that：Including substrate and tool with AS IC circuits
There is the detector of microbridge supporting construction, the detector is electrically connected with the ASI C circuits of the Semiconductor substrate, the detector
It is divided into four regions arranged in arrays, respectively first area, second area, the 3rd region and the 4th region；
The detector includes the metallic reflector and insulating medium layer on the substrate, and the metallic reflector includes several
The metal derby of matrix arrangement, the thickness of first and third region insulation dielectric layer is more than second, four-range insulating medium layer, described
First and third region insulation dielectric layer is provided with several metal electrodes, and the metal electrode passes through through first and third region
The connection metal of insulating medium layer is connected with the metallic reflector；
Supporting layer, heat-sensitive layer, are sequentially provided with the metal electrode in first and third region and second, four-range metal derby
One protective layer, the area of the heat-sensitive layer is less than the area of the supporting layer, the sheet resistance ratio of the heat-sensitive layer in first and third region
Secondth, several contact holes, the contact are provided with the high 200K Ω ± 20K Ω of four-range sheet resistance value, first protective layer
The lower end in hole terminates at the heat-sensitive layer；
Through hole is additionally provided with first protective layer, the through hole passes through first protective layer and the supporting layer, terminates
Metal electrode in second, four-range metal derby or the one or three region；
Electrode metal is full of in the through hole and the contact hole, the electrode metal and the first protective layer are provided with the second protection
Layer, the heat-sensitive layer is electrically connected with the electrode metal.
2. a kind of non-brake method Two-color Infrared Detectors MEMS chip according to claim 1, it is characterised in that the support
Layer is silicon nitride film, and the heat-sensitive layer is vanadium oxide or titanium oxide, and first protective layer and the second protective layer are nitridation
Silicon thin film.
3. a kind of non-brake method Two-color Infrared Detectors MEMS chip according to claim 1, it is characterised in that the insulation
Dielectric layer is silica, and its thickness is
4. a kind of non-brake method Two-color Infrared Detectors MEMS chip according to claim 1, it is characterised in that the connection
Metal is depressed place.
5. a kind of manufacture method of non-brake method Two-color Infrared Detectors MEMS chip, it is characterised in that comprise the following steps：
Step 1. deposits layer of metal reflecting layer on the substrate comprising ASIC circuit, and carries out figure to the metallic reflector
Change is handled, and the metallic reflector after graphical treatment includes the metal derby of matrix arrangement；
Step 2. deposits insulating medium layer on metallic reflector, and carries out chemical mechanical polish process to the insulating medium layer
(CMP) handle；
Step 3. is using photoetching and the method etched, in first and third region, pair of the detector pixel interface electrode of correspondence array
Answer and connecting hole is etched on position, the deposition connection metal in the connecting hole；
Step 4. deposit metal electrodes layer on first and third region insulation dielectric layer, and place is patterned to metal electrode layer
Metal electrode layer after reason, graphical treatment forms the metal electrode of several matrix arrangements, and metal electrode and the company
Metal one-to-one corresponding is connect, the metal electrode is detector pixel interface electrode；
Step 5. photoetching and etching second area and four-range insulating medium layer, the upper end of etch-stop metallic reflector
Face；
Step 6. sprays first on the metal electrode layer after graphical and second after etching, four-range insulating medium layer
Sacrifice layer, second, the upper surface of the sacrifice layer of four-range first and the insulating medium layer of the process CMP processing in first and third region
Upper surface it is concordant；
Step 7. by the first sacrifice layer plasma ashing in first and third region, removes the using the method for photoetching and etching
First, the first sacrifice layer in three regions, carries out CMP processing afterwards；
Step 8. coats the second sacrifice layer on the insulating medium layer in first and third region and the sacrifice layer of second, four-range first；
The sacrifice layer of step 9. pair second and the first sacrifice layer are patterned processing, graphical afterwards in first area and the 3rd area
The first anchor point hole is formed on domain, the first anchor point hole terminates at the metal electrode, the shape on second area and the 4th region
Into the second anchor point hole, the second anchor point hole terminates at the metal derby；
Step 10. depositing support layer on the first sacrifice layer and the second sacrifice layer after graphical treatment, the supporting layer is
Silicon nitride film；
Step 11. is using lift-off process (stripping technology), respectively in first and third region and second, four-range branch
Support layer on respectively reactive sputtering heat-sensitive layer, and first and third region temperature-sensitive layer film than second, four-range temperature-sensitive layer film
The high 200K Ω ± 20K Ω of sheet resistance value；
Step 12. deposits the first protective layer on heat-sensitive layer and supporting layer.
Step 13., using the method for photoetching and etching, etches away described first in the first anchor point hole and the bottom in the second anchor point hole
Protective layer and supporting layer, respectively terminate in the metal electrode and second, four-range metal derby, form through hole；
Step 14., using the method for photoetching and etching, etches away first on the first protective layer above heat-sensitive layer, protective layer,
The heat-sensitive layer is terminated at, contact hole is formed；
Step 15. depositing electrode metal in through hole and contact hole, the sheet resistance of the electrode metal is 5~50 Ω；
Step 16. deposits the second protective layer on electrode metal layer；
Step 17. carries out the isolation pattern of self-registered technology to each pixel using the method for photoetching and etching；
Step 18. structure release, scribing release is carried out to chip, and the first sacrifice layer and the second sacrifice layer are discharged clean, formed
Resonator.
6. a kind of manufacture method of non-brake method Two-color Infrared Detectors MEMS chip according to claim 5, its feature exists
In in addition to step 19. packaging and testing, detector test encapsulation is manufactured into movement or complete machine.
7. a kind of manufacture method of non-brake method Two-color Infrared Detectors MEMS chip according to claim 5, its feature exists
The insulating medium layer thickness deposited in, the insulating medium layer is silica, step 2 is
8. a kind of manufacture method of non-brake method Two-color Infrared Detectors MEMS chip according to claim 5, its feature exists
In, in step 3, in the connecting hole after deposition connection metal, CMP processing is carried out to the connection metal, and to the secondth area
Domain and four-range insulating medium layer carry out CMP processing.
9. a kind of manufacture method of non-brake method Two-color Infrared Detectors MEMS chip according to claim 5, its feature exists
In the heat-sensitive layer thickness existsBetween.
10. a kind of manufacture method of non-brake method Two-color Infrared Detectors MEMS chip according to claim 5, its feature exists
In the thickness of first sacrifice layerThe second sacrifice layer polyimides, thickness isThe thickness of first protective layer and second protective layer is
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