CN107101973A - A kind of NH3 apparatus for measuring concentration of surface plasma waveguide - Google Patents
A kind of NH3 apparatus for measuring concentration of surface plasma waveguide Download PDFInfo
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- CN107101973A CN107101973A CN201710371332.4A CN201710371332A CN107101973A CN 107101973 A CN107101973 A CN 107101973A CN 201710371332 A CN201710371332 A CN 201710371332A CN 107101973 A CN107101973 A CN 107101973A
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- measuring concentration
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- surface plasma
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000005259 measurement Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 37
- 239000007789 gas Substances 0.000 description 19
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 18
- 239000002105 nanoparticle Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002103 nanocoating Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 210000000498 stratum granulosum Anatomy 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
- G01N2021/4166—Methods effecting a waveguide mode enhancement through the property being measured
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a kind of NH3 apparatus for measuring concentration of surface plasma waveguide, it is characterized in that, described device is the structure of binary channels micro-loop, including upper channel and lower channel, micro-loop is provided between the upper channel and lower channel, upper channel is NH3 gas passages, and lower channel is photo-signal channel.This NH3 apparatus for measuring concentration cost is low, can realize high sensitivity, can apply in particular surroundings measurement, good in anti-interference performance, with similar gas sensor compared with range it is bigger, while holding high-resolution and the linearity.
Description
Technical field
The present invention relates to gasmetry field, specifically a kind of NH3 apparatus for measuring concentration of surface plasma waveguide.
Background technology
Surface plasma excimer (Surface plasmon polariton, abbreviation SPP) is by changing metal surface
Sub-wavelength structure realize a kind of light wave and transportable surface charge between electromagnet mode, metal and medium interface can be supported
The surface plasma-wave of transmission, so that light energy is transmitted, and it is not limited by diffraction limit.Just because of this unique property of SPP
Matter, makes it manipulate light energy in nanometer scale and plays an important role.At the same time, with silicon-based semiconductor micro-nano technology skill
The raising at full speed of art, silicon-based semiconductor devices become the popular direction of current integrated photonics, and wherein micro-loop structure is wide
It is general to be used for the fields such as wavelength division multiplexer, modulator, photoswitch, sensor.
NH3It is that one kind common are poisonous gas, ZnO nano particle is a kind of preparation method comparative maturity to NH3Deng reduction
The property preferable metal oxide materials of gas absorption, in May, 2013,《Optoelectroics Letters》Report " An
Ammonia gas sensor with two chamber based on U-bending microring resonator " texts
Chapter, devises a kind of new U-shaped micro-loop gas sensor.Although the NH currently realized3Measurement of concetration electronic device sensitivity
Preferably, but sensor anti-interference is poor, particular surroundings application very little, temperature stability is relatively low.
Mostly it is at present electronic device for NH3 gas concentration measurements, the design for optical measuring system is less.
The content of the invention
The purpose of the present invention be in view of the shortcomings of the prior art, and provide a kind of surface plasma waveguide NH3 concentration survey
Measure device.This NH3 apparatus for measuring concentration cost is low, can realize high sensitivity, can apply in particular surroundings measurement, anti-interference
Performance is good, compared with similar gas sensor range it is bigger, while keeping high-resolution and the linearity.
Realizing the technical scheme of the object of the invention is：
A kind of NH3 apparatus for measuring concentration of surface plasma waveguide, described device is the structure of binary channels micro-loop, including upper
Layer passage and lower channel, are provided with micro-loop between the upper channel and lower channel, upper channel is NH3 gas passages, under
Layer passage is photo-signal channel.
The upper channel, lower channel are SPP waveguides.
The SPP waveguides include sequentially splicing from top to bottom the first SiO2 layer, ZnO particle layer, layer gold and the 2nd SiO2
Layer.
The micro-loop is silicon (Silicon-on-Isolator, abbreviation SOI) material structure on round insulation substrate.
Described ZnO layer is formed by ZnO nano particle deposition, and deposition utilizes spin-coating method, ZnO nano particle organic suspension liquid
After being deposited using spin-coating method, dried in low temperature drying case, in micro-loop waveguide surface one layer of coating of formation.
Space between ZnO nano particle is used for adsorbed gas.
The refraction index changing of described ZnO nano coating, the chemisorbed being subject to mainly due to NH3 molecules causes,
Reversible chemical reaction is obeyed in absorptionAs long as therefore surface O anions and ammonia divide
The mol ratio of son is more than 3:2, chemisorbed change how much should be linear with the change of ambient atmos concentration.
Described ZnO layer causes micro-loop variations in refractive index, can be obtained by Lorentz formula：Wherein n
For waveguide effective index, N is the molecular number in medium unit volume, and α is the molecule Mean static polarizabilities of isotropic medium.
Described SPP wavelength, typical dielectric-metal-medium-waveguiding structure of use, can realize very strong light
Sub- localization, it is possible to increase the optical signal carrier ability of micro-loop structure.
Because NH3 gases enter ZnO particle layer of air gap, aperture can be covered, such coating refractive index changes,
And then cause the effective refractive index of whole micro-loop structure to change.
Incident light is sent by wideband light source in photo-signal channel, and emergent light is received after being filtered through Sensitive Apparatus by spectrometer,
The light intensity obtained by spectrometer changes, and with reference to light intensity change and effective refractive index relation, obtains NH3 gas concentrations.
This NH3 apparatus for measuring concentration cost is low, can realize high sensitivity, can apply in particular surroundings measurement, resists dry
Immunity can be good, with similar gas sensor compared with range it is bigger, while holding high-resolution and the linearity.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment；
Fig. 2 is the structural representation of SPP waveguides in embodiment.
In figure, the incident light 6. of 1. mixed gas entrance port, 2. upper channel, 3. mixed gas exit portal, 4. micro-loop 5.
9. layer gold 10.ZnO stratum granulosums 11. of the 2nd SiO2 layers of 7. emergent light 8. of lower channel the oneth SiO2 layers.
Embodiment
Present invention is further elaborated with reference to the accompanying drawings and examples, but is not to present invention restriction.
Embodiment：
Reference picture 1, a kind of NH3 apparatus for measuring concentration of surface plasma waveguide, described device is the knot of binary channels micro-loop
Structure, including upper channel 2 and lower channel 6, are provided with micro-loop 4 between the upper channel 2 and lower channel 6, upper channel 2 is
NH3 gas passages, lower channel 6 is photo-signal channel.
The upper channel 2, lower channel 6 are SPP waveguides.
The SPP waveguides include the first SiO2 layers 11, ZnO particle layer 10, layer gold 9 and second sequentially spliced from top to bottom
SiO2 layers 8, as shown in Figure 2.
The micro-loop 4 is circle SOI material structures.
Described ZnO layer 10 is formed by ZnO nano particle deposition, and deposition utilizes spin-coating method, ZnO nano particle organic suspension
After liquid is using spin-coating method deposition, dried in low temperature drying case, in micro-loop waveguide surface one layer of coating of formation.
Space between ZnO nano particle is used for adsorbed gas.
The refraction index changing of the ZnO nano coating, the chemisorbed being subject to mainly due to NH3 molecules causes, and inhales
Attached obedience reversible chemical reactionAs long as therefore surface O anions and ammonia molecule
Mol ratio be more than 3:2, chemisorbed change how much should be linear with the change of ambient atmos concentration.
The ZnO particle layer 10 causes micro-loop variations in refractive index, can be obtained by Lorentz formula：Its
Middle n is waveguide effective index, and N is the molecular number in medium unit volume, and α is the molecule average polarization of isotropic medium
Rate.
The SPP waveguides, typical dielectric-metal-medium-waveguiding structure of use, can realize very strong photon
Localization, it is possible to increase the optical signal carrier ability of micro-loop structure.
Because NH3 gases enter the air gap of ZnO particle layer 10, aperture can be covered, such coating refractive index occurs
Change, and then cause the effective refractive index of whole micro-loop structure to change, mixed gas is by mixed gas entrance port 1 in this example
Into exporting as mixed gas exit portal 3.
Incident light 5 is sent by wideband light source in photo-signal channel, and emergent light 7 is connect after being filtered through Sensitive Apparatus by spectrometer
Receive, the light intensity obtained by spectrometer changes, and with reference to light intensity change and effective refractive index relation, obtains NH3 gas concentrations.
Claims (3)
1. a kind of NH3 apparatus for measuring concentration of surface plasma waveguide, it is characterized in that, described device is the knot of binary channels micro-loop
Structure, including upper channel and lower channel, are provided with micro-loop between the upper channel and lower channel, upper channel is NH3 gas
Body passage, lower channel is photo-signal channel.
2. the NH3 apparatus for measuring concentration of surface plasma waveguide according to claim 1, it is characterized in that, the upper strata leads to
Road, lower channel are SPP waveguides.
3. the NH3 apparatus for measuring concentration of surface plasma waveguide according to claim 2, it is characterized in that, the SPP waveguides
Including sequentially splice from top to bottom the first SiO2 layers, ZnO particle layer, layer gold and the 2nd SiO2 layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710371332.4A CN107101973A (en) | 2017-05-24 | 2017-05-24 | A kind of NH3 apparatus for measuring concentration of surface plasma waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710371332.4A CN107101973A (en) | 2017-05-24 | 2017-05-24 | A kind of NH3 apparatus for measuring concentration of surface plasma waveguide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107101973A true CN107101973A (en) | 2017-08-29 |
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ID=59670284
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710371332.4A Pending CN107101973A (en) | 2017-05-24 | 2017-05-24 | A kind of NH3 apparatus for measuring concentration of surface plasma waveguide |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1126939A (en) * | 1994-12-27 | 1996-07-17 | 岸冈俊 | Low-temperature plasma generator |
| CN101009330A (en) * | 2007-01-29 | 2007-08-01 | 浙江大学 | A ZnO base transparent field effect transistor |
| CN101926234A (en) * | 2008-01-28 | 2010-12-22 | E.I.内穆尔杜邦公司 | In substrate, form the method for particle thin layer |
| CN104917054A (en) * | 2015-07-09 | 2015-09-16 | 广西师范大学 | Graphene array surface plasma laser with real-time adjustable emitting wavelength |
| CN105372207A (en) * | 2015-11-25 | 2016-03-02 | 广西师范大学 | Graphene material surface plasmon waveguide trace gas sensing device |
| CN106098802A (en) * | 2016-06-29 | 2016-11-09 | 北京理工大学 | PtSi Infrared Detectors that a kind of local surface plasma strengthens and preparation method thereof |
| CN206891963U (en) * | 2017-05-24 | 2018-01-16 | 广西师范大学 | A kind of NH3 apparatus for measuring concentration of surface plasma waveguide |
-
2017
- 2017-05-24 CN CN201710371332.4A patent/CN107101973A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1126939A (en) * | 1994-12-27 | 1996-07-17 | 岸冈俊 | Low-temperature plasma generator |
| CN101009330A (en) * | 2007-01-29 | 2007-08-01 | 浙江大学 | A ZnO base transparent field effect transistor |
| CN101926234A (en) * | 2008-01-28 | 2010-12-22 | E.I.内穆尔杜邦公司 | In substrate, form the method for particle thin layer |
| CN104917054A (en) * | 2015-07-09 | 2015-09-16 | 广西师范大学 | Graphene array surface plasma laser with real-time adjustable emitting wavelength |
| CN105372207A (en) * | 2015-11-25 | 2016-03-02 | 广西师范大学 | Graphene material surface plasmon waveguide trace gas sensing device |
| CN106098802A (en) * | 2016-06-29 | 2016-11-09 | 北京理工大学 | PtSi Infrared Detectors that a kind of local surface plasma strengthens and preparation method thereof |
| CN206891963U (en) * | 2017-05-24 | 2018-01-16 | 广西师范大学 | A kind of NH3 apparatus for measuring concentration of surface plasma waveguide |
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Application publication date: 20170829 |
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