CN107092168A - The development householder method and its equipment of photoetching - Google Patents
The development householder method and its equipment of photoetching Download PDFInfo
- Publication number
- CN107092168A CN107092168A CN201710283921.7A CN201710283921A CN107092168A CN 107092168 A CN107092168 A CN 107092168A CN 201710283921 A CN201710283921 A CN 201710283921A CN 107092168 A CN107092168 A CN 107092168A
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- Prior art keywords
- substrate
- development
- line width
- photoetching
- region
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The present invention relates to the development householder method and its equipment of a kind of photoetching, methods described includes：Obtain the numerical value that substrate has the linewidth bias target line width in the abnormal region of lithographic line width and the region；Non-contact thermal device is moved to the region of substrate, sets heating-up temperature and heat time to carry out local heating to the substrate according to the numerical value, to carry out thermal compensation to the development of the photoresist on substrate；The photoresist is developed.The present invention carries out local heating by there is the abnormal region of lithographic line width to substrate, play the effect of the thermal compensation to substrate and photoresist, the content of solvent in photoresist at compensation is reduced, so as to change photoresist exposure imaging characteristic, final realize improves the purpose of line width homogeneity.
Description
Technical field
The present invention relates to photoetching process, the development householder method of more particularly to a kind of photoetching further relates to a kind of photoetching
Development auxiliary equipment.
Background technology
At present in the manufacturing process of display panel, there is the CPK (Complex of line width (CD) in photoetching (gold-tinted) technique
Process Capability index, process capability index) it is not up to standard the problem of, that is, the homogeneity of line width it is bad.Cause
This improves the homogeneity of line width, and it is the major issue that current photoetching process needs to solve to improve CPK.
The content of the invention
Based on this, it is necessary to provide a kind of development householder method of photoetching.
A kind of development householder method of photoetching, including：Obtain substrate and there is the abnormal region and the region of lithographic line width
Linewidth bias target line width numerical value；Non-contact thermal device is moved to the region of substrate, according to the numerical value
Set heating-up temperature and heat time to carry out local heating to the substrate, vulcanized with the development to the photoresist on substrate
Repay；The photoresist is developed.
In one embodiment, in addition to substrate carry out photoetching and carry out wire width measuring to completing the substrate after photoetching
Step, to obtain the numerical value that the substrate has the linewidth bias target line width in the abnormal region of lithographic line width and the region.
In one embodiment, what the step of progress wire width measuring was obtained is the line width datagram of substrate each position.
In one embodiment, the step of progress local heating to the substrate also includes according to the big of the region
The step of heating surface (area) (HS of the small adjustment non-contact thermal device.
In one embodiment, described is that photoresist on to substrate enters the step of carry out local heating to the substrate
Carried out after the soft baking of row.
In one embodiment, it is described to the substrate carry out local heating the step of be included in development before carry out heating and
Heated in developing process.
In one embodiment, the substrate is the substrate of display panel.
It there is a need to the development auxiliary equipment that a kind of photoetching is provided.
A kind of development auxiliary equipment of photoetching, including：, there is lithographic line width for obtaining substrate in line width exception acquisition module
Abnormal region and the numerical value of the linewidth bias target line width in the region；Non-contact thermal device, for the substrate
Local heating is carried out, to carry out thermal compensation to the development of the photoresist on substrate；Apparatus for adjusting position, including it is described for driving
The motion of non-contact thermal device motion；Controller, for setting the non-contact thermal to fill according to the numerical value
The heating-up temperature put and heat time, and the apparatus for adjusting position according to the Region control that there is lithographic line width exception
Non-contact thermal device is driven to be moved to the region.
In one of the embodiments, the non-contact thermal device is infrared heating device or hot air heating apparatus.
In one of the embodiments, the non-contact thermal device includes the first heating dress located at developing process area
Put, and located at substrate enter developing process area before working area secondary heating mechanism.
The development householder method and equipment of above-mentioned photoetching, part is carried out by there is the abnormal region of lithographic line width to substrate
Heating, plays the effect of the thermal compensation to substrate and photoresist, the content of solvent in photoresist at compensation is reduced, so as to change photoetching
Glue exposure imaging characteristic, final realize improves the purpose of line width homogeneity.
Brief description of the drawings
Fig. 1 is the flow chart of the development householder method of photoetching in an embodiment；
Fig. 2 is the schematic diagram that non-contact-type heating device carries out local heating to substrate.
Embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In accompanying drawing
Give the preferred embodiment of the present invention.But, the present invention can be realized in many different forms, however it is not limited to this paper institutes
The embodiment of description.On the contrary, the purpose that these embodiments are provided be make to the disclosure more it is thorough comprehensively.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " include one or more phases
The arbitrary and all combination of the Listed Items of pass.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or can also have element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " level ", " on ",
" under ", "left", "right" and similar statement for illustrative purposes only.
Fig. 1 is the flow chart of the development householder method of photoetching in an embodiment, is comprised the following steps：
S110, obtains substrate and there is the abnormal region of lithographic line width and deviate the numerical value of target line width.
S120, thermal compensation is carried out by non-contact thermal device to the abnormal region of lithographic line width.
S130, develops to the photoresist on substrate.
In step s 110, substrate is obtained to there is the abnormal region of lithographic line width and deviate the numerical value of target line width.
In one embodiment, it is that photoetching first is carried out to one piece of congener substrate, line is entered to substrate after the completion of photoetching
Width measurement, obtains the numerical value that substrate has the abnormal region of lithographic line width and the linewidth bias target line width in the region.Step
S110 is to transfer these data in batch production to carry out development aid in treatment.
In one embodiment, carrying out wire width measuring to substrate needs to obtain the line width datagram of substrate each position, i.e. CD
MAP.Record has a positional information (can be represented with horizontal, ordinate) of each measurement point on the CD MAP, and the point line width number
According to.
In the step s 120, thermal compensation is carried out to the abnormal region of lithographic line width by non-contact thermal device.
Non-contact thermal device is moved to the lithographic line width abnormal area of substrate, local heating is carried out to substrate.Plus
The temperature and time of heat is configured according to the numerical value of the linewidth bias target line width in the region, with to the photoresist on substrate
Development carries out thermal compensation.
In one embodiment, the step of carrying out local heating to substrate, which is included in before development, is heated and was being developed
Heated in journey.Heating before development can carry out local heating, developing process to the abnormal region of lithographic line width exactly
In heating thermal compensation persistently can be carried out to substrate and photoresist, therefore finally can obtain preferable thermal compensation effect.
It may be appreciated, it should substrate is sent into developing process area as early as possible after the completion of heating before development and developed.
In one embodiment, the step of carrying out local heating to substrate is that the photoresist on to substrate carries out soft baking (Soft
Bake carried out after).
In step s 130, the photoresist on substrate is developed.
Substrate is sent into the developing apparatus in developing process area by conveyer (such as conveyer belt) and developed.
The development householder method and equipment of above-mentioned photoetching, part is carried out by there is the abnormal region of lithographic line width to substrate
Heating, plays the effect of the thermal compensation to substrate and photoresist, the content of solvent in photoresist at compensation is reduced, so as to change photoetching
Glue exposure imaging characteristic, final realize improves the purpose of line width homogeneity.
In one embodiment, the development householder method of above-mentioned photoetching is applied to the manufacture of display panel, i.e. the substrate is
Semiconductor components and devices structure is formed with the substrate of display panel in the fabrication process, substrate.
In one embodiment, the step of carrying out local heating to substrate also includes according to the big of lithographic line width abnormal area
The step of heating surface (area) (HS of small adjustment non-contact thermal device.I.e. non-contact thermal device is that a heating surface (area) (HS is adjustable
Device.
In one embodiment, step S110 is to obtain the line width region less than normal relative to desired value, follow-up thermal compensation step
Suddenly it is that the region less than normal relative to desired value to line width carries out thermal compensation.
The present invention also provides a kind of development auxiliary equipment of photoetching.Referring to Fig. 2, the development auxiliary equipment of photoetching includes line width
(Fig. 2 is not for abnormal acquisition module (Fig. 2 does not show), non-contact thermal device 30, controller (Fig. 2 does not show) and apparatus for adjusting position
Show).
Line width exception acquisition module is used to obtaining that substrate 20 to have the abnormal region of lithographic line width and the line width in the region is inclined
From the numerical value of target line width.
Non-contact thermal device 30 is used to carry out local heating to substrate 20, with the development to the photoresist on substrate 20
Carry out thermal compensation.
Apparatus for adjusting position includes being used to drive the first party that non-contact thermal device 30 is moved back and forth in the first direction
To motion, and the second direction motion for driving non-contact thermal device 30 to move back and forth in a second direction,
Wherein first direction and second direction are located at the top of substrate 20, and first direction and second direction intersect.In the present embodiment
In in the embodiment depicted in figure 2, first direction be figure in arrow shown in direction, second direction be perpendicular to the side of first direction
To the apparatus for adjusting position in i.e. Fig. 2 can be with left and right adjusting and perpendicular to the direction of first direction regulation non-contact thermal
The position of device 30.
First/second direction motion can use known motion, such as first/second direction motion
Drive non-contact thermal device 30 to be moved by slide rail, using motor as power source, be driven by gear or belt.
Controller is used to set the heating-up temperature of non-contact thermal device 30 according to the numerical value for deviateing target line width and added
The hot time.Controller is additionally operable to there is the abnormal region of lithographic line width according to substrate, and control apparatus for adjusting position will be contactless
Heater is moved to the region, to be heated to the region.
In the embodiment depicted in figure 2, substrate 20 is transported by conveyer (being conveyer belt 10 in the present embodiment), is passed
The direction for sending device to transmit is the direction of arrow in Fig. 2.Substrate 20 first sends into working area A after the completion of soft baking, is then fed into aobvious
Shadow process island B.In one embodiment, non-contact thermal device include located at developing process area B first heater and
Located at working area A secondary heating mechanism, by secondary heating mechanism first before developing to being coated on substrate 20 and substrate 20
Photoresist is heated, and substrate 20 then is sent into developing process area B again, is continued by first heater during development
Substrate 20 is heated.
In one embodiment, non-contact thermal device 30 is infrared heating device.That is non-contact thermal device 30
Infrared generator is provided with, is heated by launching infrared ray.The infrared generator can be far infrared
Generating means.By infrared radiation to substrate 20 and/or substrate 20 on photoresist locally be heated.
In another embodiment, non-contact thermal device 30 is hot air heating apparatus.That is non-contact thermal device
30 are provided with air outlet, and the hot blast blown out by air outlet is heated to the photoresist on substrate 20 and/or substrate 20.
In one embodiment, apparatus for adjusting position is the position to non-contact thermal device 30 above conveyer
It is adjusted, that is, controls non-contact thermal device 30 to be moved in the top of substrate 20.In other embodiments, position is adjusted
Regulating device can also be that control non-contact thermal device 30 is moved in the lower section of substrate 20.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and it describes more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of development householder method of photoetching, including：
Obtain the numerical value that substrate has the linewidth bias target line width in the abnormal region of lithographic line width and the region；
Non-contact thermal device is moved to the region of substrate, heating-up temperature and heat time are set according to the numerical value
Local heating is carried out to the substrate, to carry out thermal compensation to the development of the photoresist on substrate；
The photoresist is developed.
2. the development householder method of photoetching according to claim 1, it is characterised in that also including substrate is carried out photoetching and
To completing the step of substrate after photoetching carries out wire width measuring, there is the abnormal region of lithographic line width and institute to obtain the substrate
State the numerical value of the linewidth bias target line width in region.
3. the development householder method of photoetching according to claim 2, it is characterised in that the step of the carry out wire width measuring
What is obtained is the line width datagram of substrate each position.
4. the development householder method of photoetching according to claim 3, it is characterised in that described that part is carried out to the substrate
The step of the step of heating, also includes adjusting the heating surface (area) (HS of the non-contact thermal device according to the size in the region.
5. the development householder method of photoetching according to claim 1, it is characterised in that described that part is carried out to the substrate
The step of heating is that the photoresist on to substrate carried out after soft baking.
6. the development householder method of photoetching according to claim 1, it is characterised in that described that part is carried out to the substrate
The step of heating, which is included in, is heated before development and is heated in developing process.
7. the development householder method of photoetching according to claim 1, it is characterised in that the substrate is the base of display panel
Plate.
8. a kind of development auxiliary equipment of photoetching, it is characterised in that including：
, there is the linewidth bias mesh in the abnormal region of lithographic line width and the region for obtaining substrate in line width exception acquisition module
The wide numerical value of graticule；
Non-contact thermal device, for carrying out local heating to the substrate, to be carried out to the development of the photoresist on substrate
Thermal compensation；
Apparatus for adjusting position, including for driving the motion of the non-contact thermal device motion；
Controller, heating-up temperature and heat time for setting the non-contact thermal device according to the numerical value, and
The apparatus for adjusting position according to the Region control that there is lithographic line width exception drives non-contact thermal device to be moved to
The region.
9. the development auxiliary equipment of photoetching according to claim 8, it is characterised in that the non-contact thermal device is
Infrared heating device or hot air heating apparatus.
10. the development auxiliary equipment of photoetching according to claim 8, it is characterised in that the non-contact thermal device
Heated including the first heater located at developing process area, and located at substrate into second of the working area before developing process area
Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710283921.7A CN107092168A (en) | 2017-04-26 | 2017-04-26 | The development householder method and its equipment of photoetching |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710283921.7A CN107092168A (en) | 2017-04-26 | 2017-04-26 | The development householder method and its equipment of photoetching |
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| CN107092168A true CN107092168A (en) | 2017-08-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019042039A1 (en) * | 2017-09-01 | 2019-03-07 | 京东方科技集团股份有限公司 | Developing device and developing method thereof |
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