CN107086783A - A kind of high-power switching circuit - Google Patents
A kind of high-power switching circuit Download PDFInfo
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- CN107086783A CN107086783A CN201710397782.0A CN201710397782A CN107086783A CN 107086783 A CN107086783 A CN 107086783A CN 201710397782 A CN201710397782 A CN 201710397782A CN 107086783 A CN107086783 A CN 107086783A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The present invention provides a kind of high-power switching circuit, including:Input power (100), include the first input power and the second input power, the magnitude of voltage of the first input voltage of the first input power offer, the second input voltage of the second input power offer, first input voltage and second input voltage is unequal；Multivibrator (101), exports square wave, and the square wave is exported to voltage-multiplying circuit (102), and the amplitude of the square wave is equal to the magnitude of voltage of first input voltage；Voltage-multiplying circuit (102), in the presence of the square wave and first input voltage, multiplication of voltage voltage is exported to the ON-OFF control circuit (103), its magnitude of voltage is one times of first input voltage value；After ON-OFF control circuit (103), switch K1 closures, the multiplication of voltage voltage is exported to power switch (104)；Power switch (104), in the presence of the multiplication of voltage voltage, first input voltage and second input voltage, exports first operating voltage and second operating voltage.
Description
Technical field
The present invention relates to electronic circuit technology field, and in particular to a kind of on-off circuit, more particularly to a kind of high-power opens
Powered-down road.
Background technology
High-power switching circuit refers to the control circuit in big current loop with " on " and "off" two states.
With whole electronics industry flourish and electronic technology continuous progress, the application of high-power switching circuit is also increasingly
Extensively.
In the high-power switching circuit of prior art, due to design defect or the reason such as unreasonable is driven, cause existing
The high-power switching circuit of technology is resistance to be forced down, power consumption is big, easily heating, switch response speed is slow, so as to cause on-off circuit defeated
Go out that efficiency is low, power is small, pressure drop is big, volume is big, job insecurity, even burn circuit element.
The content of the invention
The present invention is driven in view of the shortcomings of the prior art with above mentioned problem there is provided a kind of high-power switching circuit using voltage
Ejector half element, its high pressure, element current-carrying are big, pressure drop negligible, power output is high, oneself power consumption is small and temperature rise pole
Low, switching speed is exceedingly fast and is adapted to modularized production.A kind of high-power switching circuit that the present invention is provided includes:
Input power (100), power supply, including the first input power and the second input are constantly provided to the on-off circuit
Power supply, first input power provides the first input voltage, and second input power provides the second input voltage, and described the
The magnitude of voltage of one input voltage and second input voltage is unequal；
Multivibrator (101), first input voltage is provided to the multivibrator (101) so that described many
Harmonic oscillator (101) exports square wave, and the square wave is exported to voltage-multiplying circuit (102), and the amplitude of the square wave is equal to described first
The magnitude of voltage of input voltage；
Voltage-multiplying circuit (102), in the presence of the square wave and first input voltage, to the ON-OFF control circuit
(103) multiplication of voltage voltage is exported, the magnitude of voltage of the multiplication of voltage voltage is one times of first input voltage value；
After ON-OFF control circuit (103), switch K1 closures, the multiplication of voltage voltage is exported to power switch (104)；
Power switch (104), in the effect of the multiplication of voltage voltage, first input voltage and second input voltage
Under, first operating voltage and second operating voltage are exported, wherein, first operating voltage and the described first input
Voltage has equal magnitude of voltage, and second operating voltage has equal magnitude of voltage with second input voltage.
Preferably, the multivibrator (101) includes time base circuit U1, resistance R1, R2, electric capacity C1, C2, wherein,
The 1st pin GND of the time base circuit U1 with being electrically connected to power supply, the 2nd pin Trigger, the 6th pin Thresh, electric capacity C1
One end and resistance R2 one end be connected in parallel, the electric capacity C1 other end is with being electrically connected to power supply, the resistance R2 other end, described
Time base circuit U1 the 7th pin Disch and resistance R1 one end are connected in parallel, the resistance R1 other end, the time base circuit U1
The 8th pin Vcc, the 4th pin RESET, resistance R3 one end and electric capacity C6 one end be connected in parallel, resistance R3 other end electricity
Be connected to the positive pole of first input power, the electric capacity C6 other end with being electrically connected to power supply, the 3rd of the time base circuit U1 the
Pin OUT as the multivibrator (101) output end and be electrically connected to the voltage-multiplying circuit (102) electric capacity C3 it is negative
Pole, the 5th pin Ctrl of the time base circuit U1 is electrically connected to electric capacity C2 one end, and the electric capacity C2 other end is electrically connected to power supply
Ground.
Preferably, the voltage-multiplying circuit (102) includes resistance R4, electric capacity C3, C4, diode D1, D2, wherein, electric capacity
The positive pole of C3 positive pole, diode D1 negative pole and diode D2 is connected in parallel, diode D1 positive pole and electric capacity C4 negative pole
Electrically connected with the positive pole of first input power, one end of electric capacity C4 positive pole, diode D2 negative pole and resistance R4 is in parallel
Connection, the resistance R4 other end is with being electrically connected to power supply.
Preferably, the ON-OFF control circuit (103) includes triode Q1, resistance R5, R6, R7, electric capacity C5 and switch
K1, wherein, one end of triode Q1 emitter stage, electric capacity C4 positive pole and resistance R5 is connected in parallel, resistance the R5 other end, electricity
The one end for hindering R6 one end, resistance R7 one end and electric capacity C5 is connected in parallel, and the resistance R6 other end is electrically connected to triode Q1
Base stage, the resistance R7 other end is electrically connected to switch K1 one end, and the other end of the other end and electric capacity C5 that switch K1 is electrically connected
With being connected to power supply, triode Q1 colelctor electrode is electrically connected to the power switch (104).
Preferably, the power switch (104) includes the first N-channel MOS transistor Q2, the second N-channel MOS transistor
Q3, diode D4, D6, voltage-regulator diode D3, D5, resistance R8, R9 and R10, wherein, resistance R8 one end, resistance R9 one end,
Resistance R10 one end and triode Q1 colelctor electrode be connected in parallel, the resistance R8 other end, the first N-channel MOS transistor Q2
Grid and voltage-regulator diode D3 negative pole are connected in parallel, and voltage-regulator diode D3 positive pole is electrically connected to diode D4 positive pole, two
First operating voltage is electrically connected to after pole pipe D4 negative pole and the first N-channel MOS transistor Q2 sources connected in parallel connection
Output end, the first N-channel MOS transistor Q2 drain electrode is electrically connected to the positive pole of first input power；
The resistance R10 other end is with being electrically connected to power supply；
The negative pole parallel connection of the resistance R9 other end, the second N-channel MOS transistor Q3 grid and voltage-regulator diode D5 is even
Connect, voltage-regulator diode D5 positive pole is electrically connected to diode D6 positive pole, diode D6 negative pole and the second N-channel MOS crystal
The output end of second operating voltage, the second N-channel MOS transistor Q3 leakage are electrically connected to after pipe Q3 sources connected in parallel connection
Pole is electrically connected to the positive pole of second input power.
Preferably, filter resistances and filtered electrical of the configuration resistance R3 and electric capacity C6 respectively as the time base circuit U1
Hold.
Preferably, discharge resistances of configuration resistance R11, the R12 respectively as electric capacity C11, C12, to protect the first N
Channel MOS transistor Q2 is not by electrostatic breakdown, and electric capacity C11, C12 are respectively as the first input power input and institute for configuration
The filter capacitor of the first operating voltage output end is stated to suppress used in ripple；Configure resistance R13, R14 respectively as electric capacity C13,
C14 discharge resistance, to protect the second N-channel MOS transistor Q3 not by electrostatic breakdown, configuration electric capacity C13, C14 difference
As the second input power input and the filter capacitor of the second operating voltage output end to suppress used in ripple.
Preferably, grids and second N-channel of the configuration resistance R10 as the first N-channel MOS transistor Q2
The pull down resistor of MOS transistor Q3 grid, when the switch K1 disconnects so that the power switch (104) can be quick
The output of first operating voltage and second operating voltage is closed, in addition, resistance R10 and resistance R8 compositions described first
The antistatic loop of N-channel MOS transistor Q2 grid, meanwhile, resistance R10 also constitutes second N-channel MOS with resistance R9
The antistatic loop of transistor Q3 grid.
Preferably, configuration voltage-regulator diode D3, D5 grids respectively to the first N-channel MOS transistor Q2 and institute
The grid for stating the second N-channel MOS transistor Q3 carries out pressure limiting, it is to avoid the grid is broken down by high-voltage；
Diode D4, D6 are configured, when the switch K1 disconnects, using diode D4, D6 unidirectional characteristic, is blocked described
The output voltage of first N-channel MOS transistor Q2 source electrodes and the second N-channel MOS transistor Q3 source electrodes is back to institute respectively
State the first N-channel MOS transistor Q2 grid and the grid of the second N-channel MOS transistor Q3 so that the power switch
(104) it is capable of the output of the first operating voltage and second operating voltage described in quick closedown.
Compared with prior art, the present invention uses voltage driven type element, with high pressure, element current-carrying be big, output work
Rate is high, heavy load when pressure drop is small, oneself power consumption is small and temperature rise is extremely low, switching speed is exceedingly fast and it is beneficial to be adapted to modularized production etc.
Effect.
Brief description of the drawings
Fig. 1 shows the structured flowchart of the high-power switching circuit of the present invention.
Fig. 2 shows the circuit diagram of the high-power switching circuit of the embodiment of the present invention.
Embodiment
Following description referring to the drawings is provided, to help the present invention that comprehensive understanding is limited by claim and its equivalent
Embodiment and various specific details, but these details are considered only as being exemplary.Therefore, one of ordinary skill in the art
It will be recognized that without departing from the scope and spirit of the present invention, various changes can be carried out to embodiment described herein
And modification.In addition, for clarity and brevity, omitting the description to known function and structure.With reference to the accompanying drawings and examples
The present invention is further elaborated.
Fig. 1 shows the structured flowchart of the high-power switching circuit of the present invention.As shown in figure 1, a kind of high power switch electricity
Road, including:
Input power (100), power supply, including the first input power and the second input electricity are constantly provided to on-off circuit
Source, the first input power provides the first input voltage, and the second input power provides the second input voltage, the first input voltage and the
The magnitude of voltage of two input voltages is unequal.
Multivibrator (101), the first input voltage is provided to multivibrator (101) so that multivibrator (101)
Square wave is exported, the square wave is exported to voltage-multiplying circuit (102), and the amplitude of the square wave is equal to the magnitude of voltage of the first input voltage；
Voltage-multiplying circuit (102), in the presence of the first input voltage is involved in the party, is exported to ON-OFF control circuit (103)
Multiplication of voltage voltage, the magnitude of voltage of multiplication of voltage voltage is one times of the first input voltage value；
After ON-OFF control circuit (103), switch K1 closures, multiplication of voltage voltage is exported to power switch (104)；
Power switch (104), in the presence of multiplication of voltage voltage, the first input voltage and the second input voltage, output first
Operating voltage and the second operating voltage.
Fig. 2 shows the circuit diagram of the high-power switching circuit of the embodiment of the present invention, as shown in Fig. 2 the present embodiment is used
NE555 integrated circuits are as time base circuit U1, and the first input power in input power provides the first input voltage+12V DC extremely
After NE555 time base circuits U1 the 8th pin Vcc, the 3rd pin OUT output frequencies are 10KHZ square wave, the amplitude of the square wave etc.
In the magnitude of voltage+12V of the first input voltage；Resistance R3 and electric capacity C6 are NE555 time base circuits U1 filter resistance and filter respectively
Ripple electric capacity.
As shown in Fig. 2+12V the DC that the first input power is provided are charged by diode D1 to electric capacity C3 so that electric capacity
C3 both end voltages are close to+12V DC；In addition, when NE555 time base circuits U1 the 3rd pin OUT exports the rising edge of square wave,
Also electric capacity C3 is charged.According to principle of stacking ,+12V the DC that the first input power is provided are superimposed the crest voltage+12V of square wave
DC so that the voltage of electric capacity C3 positive poles over the ground persistently raises and reaches+24V DC.+ 24V the DC being superimposed pass through diode D2
Charged to electric capacity C4 so that the voltage of electric capacity C4 positive poles over the ground reaches the voltage+24V DC of electric capacity C3 over the ground, i.e., the first input electricity
One times of the magnitude of voltage+12V DC of pressure, as shown in Fig. 2 now the voltage of A points is+24V DC.As NE555 time base circuits U1 the 3rd
When pin OUT exports square wave trailing edge ,+12V DC charge again by diode D1 to electric capacity C3, and this process repeats continuous, can
To remain A points as+24V DC.In addition, resistance R4 is the load resistance and discharge loop of voltage-multiplying circuit (102).
As shown in Fig. 2 resistance R5 provides bias voltage to the triode Q1 of ON-OFF control circuit (103), resistance R6 is to three
Pole pipe Q1 base stage carries out the anti-jamming circuit and de-noising circuit of current limliting, resistance R6 and electric capacity C5 composition switches K1.
As shown in Fig. 2 when switching K1 closures, B point voltages are reduced to zero, and triode Q1 conductings ,+24V D/C voltages pass through
Triode Q1 emitter and collectors are provided to resistance R8, R9 and R10；Wherein ,+24V D/C voltages are provided to by resistance R8
One N-channel MOS transistor Q2 grid, and cause transistor Q2 conductings, now, transistor Q2 source voltage is+12V
DC, therefore, the output end with equipotential first operating voltage of transistor Q2 source electrodes are also+12V DC, so far, are realized to negative
Offer+12V DC the first operating voltage is provided.
Similarly ,+24V D/C voltages are provided to the second N-channel MOS transistor Q3 grid by resistance R9, and cause the crystalline substance
Body pipe Q3 is turned on, now, and transistor Q3 source voltage is+5V DC, therefore, with transistor Q3 source electrodes equipotential the
The output end of two operating voltages is also+5V DC, so far, realizes the second operating voltage to load offer+5V DC.
As shown in Fig. 2 the discharge resistance of resistance R11, R12 respectively as electric capacity C11, C12, to protect the first N-channel MOS
Transistor Q2 is not by electrostatic breakdown, and electric capacity C11, C12 are exported respectively as the first input power input and the first operating voltage
The filter capacitor at end is to suppress used in ripple；Similarly, resistance R13, R14 respectively as electric capacity C13, C14 discharge resistance, with protect
The second N-channel MOS transistor Q3 is protected not by electrostatic breakdown, electric capacity C13, C14 are respectively as the second input power input and
The filter capacitor of two operating voltage output ends is to suppress used in ripple.
As shown in Fig. 2 grids and second N-channel MOS transistor Q3 of the resistance R10 as the first N-channel MOS transistor Q2
Grid pull down resistor, when switching K1 and disconnecting so that power switch (104) being capable of the operating voltage of quick closedown first and the
The output of two operating voltages, in addition, the antistatic that resistance R10 and resistance R8 constitutes the first N-channel MOS transistor Q2 grid is returned
Road, meanwhile, resistance R10 also constitutes the antistatic loop of the second N-channel MOS transistor Q3 grid with resistance R9；In addition, resistance
R8, R9 are carried out to the first N-channel MOS transistor Q2, the second N-channel MOS transistor Q3 and diode D3, D5 voltage circuit
Current limliting, it is to avoid current distributing is uneven.
As shown in Fig. 2 the grid and the second N-channel of voltage-regulator diode D3, D5 respectively to the first N-channel MOS transistor Q2
MOS transistor Q3 grid carries out pressure limiting, it is to avoid grid is broken down by high-voltage；When switching K1 disconnections, diode D4, D6 are utilized
Unidirectional characteristic, blocks the output voltage difference of the first N-channel MOS transistor Q2 source electrodes and the second N-channel MOS transistor Q3 source electrodes
It is back to the first N-channel MOS transistor Q2 grid and the second N-channel MOS transistor Q3 grid so that power switch
(104) it is capable of the output of the operating voltage of quick closedown first and second operating voltage.
It should be appreciated that the invention is not restricted to above-mentioned citing, for those of ordinary skills, can basis
Described above is improved or converted, and all these modifications and variations should all belong to the protection model of appended claims of the present invention
Enclose.
Claims (9)
1. a kind of high-power switching circuit, it is characterised in that the on-off circuit includes：
Input power (100), power supply, including the first input power and the second input electricity are constantly provided to the on-off circuit
Source, first input power provides the first input voltage, and second input power provides the second input voltage, described first
The magnitude of voltage of input voltage and second input voltage is unequal；
Multivibrator (101), first input voltage is provided to the multivibrator (101) so that the multi-resonant
Device (101) output square wave is swung, the square wave is exported to voltage-multiplying circuit (102), and the amplitude of the square wave is equal to the described first input
The magnitude of voltage of voltage；
Voltage-multiplying circuit (102), in the presence of the square wave and first input voltage, to the ON-OFF control circuit
(103) multiplication of voltage voltage is exported, the magnitude of voltage of the multiplication of voltage voltage is one times of first input voltage value；
After ON-OFF control circuit (103), switch K1 closures, the multiplication of voltage voltage is exported to power switch (104)；
Power switch (104), in the presence of the multiplication of voltage voltage, first input voltage and second input voltage,
First operating voltage and second operating voltage are exported, wherein, first operating voltage and the described first input electricity
Pressing element has equal magnitude of voltage, and second operating voltage has equal magnitude of voltage with second input voltage.
2. a kind of high-power switching circuit according to claim 1, it is characterised in that multivibrator (101) bag
Time base circuit U1, resistance R1, R2, electric capacity C1, C2 are included, wherein, the 1st pin GND of the time base circuit U1 is electrically connected to power supply
Ground, the 2nd pin Trigger, the 6th pin Thresh, electric capacity C1 one end and resistance R2 one end are connected in parallel, and electric capacity C1's is another
One end with being electrically connected to power supply, one end of the resistance R2 other end, the 7th pin Disch of the time base circuit U1 and resistance R1
It is connected in parallel, the resistance R1 other end, the 8th pin Vcc of the time base circuit U1, the 4th pin RESET, resistance R3 one end
It is connected in parallel with electric capacity C6 one end, the resistance R3 other end is electrically connected to the positive pole of first input power, electric capacity C6's
The other end with being electrically connected to power supply, the 3rd pin OUT of the time base circuit U1 as the multivibrator (101) output
Hold and be electrically connected to the electric capacity C3 of the voltage-multiplying circuit (102) negative pole, the 5th pin Ctrl electrical connections of the time base circuit U1
To electric capacity C2 one end, the electric capacity C2 other end is with being electrically connected to power supply.
3. a kind of high-power switching circuit according to claim 2, it is characterised in that the voltage-multiplying circuit (102) includes
Resistance R4, electric capacity C3, C4, diode D1, D2, wherein, the positive pole of electric capacity C3 positive pole, diode D1 negative pole and diode D2
It is connected in parallel, diode D1 positive pole and electric capacity C4 negative pole are electrically connected with the positive pole of first input power, electric capacity C4's
One end of positive pole, diode D2 negative pole and resistance R4 is connected in parallel, and the resistance R4 other end is with being electrically connected to power supply.
4. a kind of high-power switching circuit according to claim 3, it is characterised in that the ON-OFF control circuit (103)
Including triode Q1, resistance R5, R6, R7, electric capacity C5 and switch K1, wherein, triode Q1 emitter stage, electric capacity C4 positive pole and
Resistance R5 one end is connected in parallel, the resistance R5 other end, resistance R6 one end, resistance R7 one end and electric capacity C5 one end simultaneously
Connection connection, the resistance R6 other end is electrically connected to triode Q1 base stage, and the resistance R7 other end is electrically connected to the one of switch K1
End, switch K1 the other end and electric capacity C5 the other end with being electrically connected to power supply, triode Q1 colelctor electrode is electrically connected to described
Power switch (104).
5. a kind of high-power switching circuit according to claim 4, it is characterised in that the power switch (104) includes
First N-channel MOS transistor Q2, the second N-channel MOS transistor Q3, diode D4, D6, voltage-regulator diode D3, D5, resistance R8,
R9 and R10, wherein, resistance R8 one end, resistance R9 one end, the colelctor electrode parallel connection of resistance R10 one end and triode Q1 connect
Connect, the negative pole of the resistance R8 other end, the first N-channel MOS transistor Q2 grid and voltage-regulator diode D3 is connected in parallel, voltage stabilizing
Diode D3 positive pole is electrically connected to the source of diode D4 positive pole, diode D4 negative pole and the first N-channel MOS transistor Q2
Pole is electrically connected to the output end of first operating voltage, the first N-channel MOS transistor Q2 drain electrode electrical connection after being connected in parallel
To the positive pole of first input power；
The resistance R10 other end is with being electrically connected to power supply；
The negative pole of the resistance R9 other end, the second N-channel MOS transistor Q3 grid and voltage-regulator diode D5 is connected in parallel, surely
Pressure diode D5 positive pole is electrically connected to diode D6 positive pole, diode D6 negative pole and the second N-channel MOS transistor Q3's
The output end of second operating voltage is electrically connected to after sources connected in parallel connection, the second N-channel MOS transistor Q3 drain electrode is electrically connected
It is connected to the positive pole of second input power.
6. a kind of high-power switching circuit according to claim 5, it is characterised in that configuration resistance R3 and electric capacity C6 difference
It is used as the filter resistance and filter capacitor of the time base circuit U1.
7. a kind of high-power switching circuit according to claim 6, it is characterised in that configuration resistance R11, R12 make respectively
For electric capacity C11, C12 discharge resistance, to protect the first N-channel MOS transistor Q2 not by electrostatic breakdown, electric capacity is configured
C11, C12 are respectively as the first input power input and the filter capacitor of the first operating voltage output end to suppress
Used in ripple；The discharge resistance of resistance R13, R14 respectively as electric capacity C13, C14 is configured, to protect second N-channel MOS
Transistor Q3 is not by electrostatic breakdown, and electric capacity C13, C14 are respectively as the second input power input and described second for configuration
The filter capacitor of operating voltage output end is to suppress used in ripple.
8. a kind of high-power switching circuit according to claim 7, it is characterised in that configuration resistance R10 is used as described the
The pull down resistor of one N-channel MOS transistor Q2 grid and the second N-channel MOS transistor Q3 grid, when the switch
When K1 disconnects so that the power switch (104) being capable of the first operating voltage described in quick closedown and second operating voltage
Output, in addition, resistance R10 and resistance R8 constitute the antistatic loop of the grid of the first N-channel MOS transistor Q2, together
When, resistance R10 also constitutes the antistatic loop of the grid of the second N-channel MOS transistor Q3 with resistance R9.
9. a kind of high-power switching circuit according to claim 8, it is characterised in that D3, D5 points of configuration voltage-regulator diode
It is other that pressure limiting is carried out to the grid of the first N-channel MOS transistor Q2 and the grid of the second N-channel MOS transistor Q3, keep away
Exempt from the grid to be broken down by high-voltage；
Diode D4, D6 are configured, when the switch K1 disconnects, using diode D4, D6 unidirectional characteristic, described first is blocked
The output voltage of N-channel MOS transistor Q2 source electrodes and the second N-channel MOS transistor Q3 source electrodes is back to described respectively
The grid of one N-channel MOS transistor Q2 grid and the second N-channel MOS transistor Q3 so that the power switch
(104) it is capable of the output of the first operating voltage and second operating voltage described in quick closedown.
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| CN201710397782.0A CN107086783B (en) | 2017-05-31 | 2017-05-31 | High-power switch circuit |
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|---|---|---|---|
| CN201710397782.0A CN107086783B (en) | 2017-05-31 | 2017-05-31 | High-power switch circuit |
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| CN107086783A true CN107086783A (en) | 2017-08-22 |
| CN107086783B CN107086783B (en) | 2023-08-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107681887A (en) * | 2017-11-21 | 2018-02-09 | 四川巧夺天工信息安全智能设备有限公司 | A kind of switching power circuit |
| CN113595386A (en) * | 2021-07-02 | 2021-11-02 | 西安军陶科技有限公司 | Ideal diode circuit and power supply |
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| GB1496868A (en) * | 1975-04-21 | 1978-01-05 | Burroughs Corp | High efficiency switching regulator |
| US20050116697A1 (en) * | 2003-11-27 | 2005-06-02 | Masahiro Matsuo | Method and apparatus for power supply controlling capable of effectively controlling switching operations |
| CN103368750A (en) * | 2013-06-24 | 2013-10-23 | 华为技术有限公司 | Power supply time sequence circuit and power supplying method |
| CN203574531U (en) * | 2013-10-09 | 2014-04-30 | 天水华天微电子股份有限公司 | A mos transistor drive circuit based on high-frequency oscillation signals |
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| CN105226946A (en) * | 2015-10-20 | 2016-01-06 | 天水七四九电子有限公司 | A kind of overvoltage/undervoltage surge control circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107681887A (en) * | 2017-11-21 | 2018-02-09 | 四川巧夺天工信息安全智能设备有限公司 | A kind of switching power circuit |
| CN107681887B (en) * | 2017-11-21 | 2023-08-22 | 四川巧夺天工信息安全智能设备有限公司 | Switching power supply circuit |
| CN113595386A (en) * | 2021-07-02 | 2021-11-02 | 西安军陶科技有限公司 | Ideal diode circuit and power supply |
| CN113595386B (en) * | 2021-07-02 | 2023-03-10 | 西安军陶科技有限公司 | Ideal diode circuit and power supply |
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|---|---|
| CN107086783B (en) | 2023-08-22 |
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