CN107083543B

CN107083543B - Chemical vapor deposition apparatus

Info

Publication number: CN107083543B
Application number: CN201710218369.3A
Authority: CN
Inventors: 王国超
Original assignee: Wuhan China Star Optoelectronics Technology Co Ltd
Current assignee: Wuhan China Star Optoelectronics Technology Co Ltd
Priority date: 2017-04-05
Filing date: 2017-04-05
Publication date: 2020-01-31
Anticipated expiration: 2037-04-05
Also published as: CN107083543A

Abstract

The invention provides chemical vapor deposition devices, which are used for modifying the existing chemical vapor deposition device for manufacturing an array substrate, and the deposition groove (111) is arranged in the area of a baffle (11) corresponding to a half plate (12) to be deposited, so that the side of the deposition groove (111) is superposed with the central axis of the baffle (11), and the distances between the remaining three sides and the corresponding side of the baffle (11) are the same, namely, a thin film can be deposited on the half plate (12), the investment cost for purchasing a new machine is reduced, the modification cost is low, the modification period is short, and the production cost is effectively reduced.

Description

Chemical vapor deposition apparatus

Technical Field

The invention relates to the field of display device manufacturing processes, in particular to chemical vapor deposition devices.

Background

In the field of Display technology, flat panel Display devices such as Liquid Crystal Displays (LCDs) and Organic Light Emitting Diodes (OLEDs) have gradually replaced Cathode Ray Tube (CRT) displays.

, the LCD panel is composed of Color Filter (CF), TFT Array (TFT Array Substrate) and Liquid Crystal Layer (Liquid Crystal Layer) filled between the two substrates, and the CF and TFT substrates both use rigid glass as substrates, so the flat panel type LCD panel is not bendable.

Compared with the LCD, the OLED has the advantages of light weight, self-luminescence, visual angle, low driving voltage, high luminous efficiency, low power consumption, fast response speed, low production cost, etc., and the application range is more and more , especially the flexible OLED display screen has the characteristic of being bendable and easy to carry, and becomes the main direction of research and development in the field of display technology.

Fig. 1 is a front view of conventional cvd apparatus for manufacturing an array substrate, the conventional cvd apparatus including a support base (susceptor)103, a large plate (substrate)102 to be deposited laid on the support base 103, and a shadow frame (shadow frame)101 disposed on the large plate 102 to be deposited, the shadow frame 101 having a rectangular shape and covering the peripheral edge of the large plate 102 to be deposited for defining a thin film deposition area of the large plate 102 to be deposited, fig. 2 is a top view of the conventional cvd apparatus, it can be seen that the widths of the four sides a, B, c, d of the shadow frame 101 are equal, and the widths of the overlapping areas e of the four sides a, B, c, d of the shadow frame 101 and the corresponding edges of the large plate 102 to be deposited are all between 2mm and 8mm, fig. 3 is a top view of the shadow frame 101 of the conventional cvd apparatus, fig. 4 is a sectional view of the shadow frame 101 at a-a, a sectional view of the shadow frame 101, and fig. 5 a sectional view of the shadow frame 101 a, B sectional view of the cross-B sectional view of the shadow frame 101 and d are equal.

Because of the limitations of other technologies, the fabrication of DOT is performed on the basis of half-plate (half substrate), and therefore, it is necessary to design chemical vapor deposition apparatuses, which are suitable for depositing thin films on a large plate to fabricate an array substrate and also suitable for depositing thin films on a half plate to fabricate DOT.

Disclosure of Invention

The invention aims to provide chemical vapor deposition devices, which can deposit films on a half plate, reduce the investment cost for purchasing new machines, have low modification cost and short modification period and effectively reduce the production cost.

In order to achieve the above object, the present invention provides chemical vapor deposition apparatuses, which include a support base, a half plate laid on the support base side, and a baffle plate disposed on the half plate to be deposited and shielding the peripheral edge of the half plate to be deposited;

and the baffle is provided with a deposition groove corresponding to the area of the half plate to be deposited, and the deposition groove is used for determining the film deposition area of the half plate to be deposited.

The sides of the depositing groove coincide with the central axis of the baffle plate, and the remaining three sides have the same distance with the corresponding sides of the baffle plate.

The baffle and the deposition groove are both rectangular.

Optionally, the half-plate to be deposited is laid on the left side of the support base, and the deposition slot is located on the left side of the baffle.

Optionally, the half-plate to be deposited is laid on the right side of the support base, and the deposition groove is located on the right side of the baffle.

The peripheral edge of the baffle has a thickness greater than the thickness of the remainder of the baffle.

The peripheral edge of the baffle has a thickness at least three times the thickness of the remainder of the baffle.

The width of the overlapping area of the baffle and the edge of the half plate to be deposited is 2mm-8 mm.

The baffle plate is made of ceramic or pure aluminum and the like.

The chemical vapor deposition devices provided by the invention have the beneficial effects that the existing chemical vapor deposition devices for manufacturing the array substrate are reformed, the deposition groove is arranged in the area of the baffle plate corresponding to the half plate to be deposited, so that the side of the deposition groove is superposed with the central axis of the baffle plate, and the distances between the remaining three sides and the corresponding sides of the baffle plate are the same, namely, a film can be deposited on the half plate, the cost for purchasing a new machine table is reduced, the reforming cost is low, the reforming period is short, and the production cost is effectively reduced.

Drawings

For a further understanding of the nature and technical content of the present invention , reference should be made to the following detailed description of the invention and accompanying drawings which are provided for purposes of illustration and description only and are not intended to be limiting.

In the drawings, there is shown in the drawings,

FIG. 1 is a front view of a conventional chemical vapor deposition apparatus;

FIG. 2 is a top view of a conventional chemical vapor deposition apparatus;

FIG. 3 is a top view of a baffle frame of a conventional chemical vapor deposition apparatus;

FIG. 4 is a cross-sectional view of a baffle frame of a conventional chemical vapor deposition apparatus at A-A;

FIG. 5 is a cross-sectional view of a baffle frame at B-B in a conventional chemical vapor deposition apparatus;

FIG. 6 is a front view of an th embodiment of the chemical vapor deposition apparatus of the present invention;

FIG. 7 is a top view of an th embodiment of the chemical vapor deposition apparatus of the present invention;

FIG. 8 is a top view of a baffle in an th embodiment of the chemical vapor deposition apparatus of the present invention;

FIG. 9 is a sectional view at A-A of a baffle in an th embodiment of the chemical vapor deposition apparatus of the present invention;

FIG. 10 is a sectional view of a baffle at B-B in an th embodiment of the chemical vapor deposition apparatus of the present invention;

FIG. 11 is a front view of a chemical vapor deposition apparatus according to a second embodiment of the present invention;

FIG. 12 is a plan view of a baffle plate in a second embodiment of the chemical vapor deposition apparatus of the present invention.

Detailed Description

To further explain the technical means and effects of the present invention, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.

Referring to fig. 6, 7 and 8, a embodiment of a chemical vapor deposition apparatus of the present invention includes a support base 13, a half-plate 12 to be deposited laid flat on the support base 13 side, and a baffle 11 disposed on the half-plate 12 and shielding the peripheral edge of the half-plate 12 to be deposited.

The baffle 11 is provided with a deposition groove 111 corresponding to the area of the half plate 12 to be deposited. The deposition groove 111 defines and exposes a thin film deposition area of the half plate 12 to be deposited.

Specifically, the side of the settling tank 111 coincides with the central axis of the baffle plate 11, and the remaining three sides are the same distance from the corresponding sides of the baffle plate 11.

Specifically, the baffle 11 and the deposition tank 111 are both rectangular in shape.

In this th embodiment, the half-plate 12 to be deposited is laid on the left side of the supporting base 13, the depositing slot 111 is located on the left side of the baffle plate 11, the distance between the side of the depositing slot 111 coinciding with the central axis of the baffle plate 11 (i.e. the right side of the depositing slot 111) and the right side of the corresponding baffle plate 11 is b1, the distances between the remaining three sides of the depositing slot 111 and the corresponding side of the baffle plate 11 are a1, c1 and d1, respectively, the width of the depositing slot 111 is L, wherein a1 is c1 — d1, and b1 is L + d 1.

Specifically, referring to fig. 9 and 10, the thickness of the peripheral edge region of the baffle 11 is h1, the thickness of the remaining region of the baffle 11 is h2, and h1 is at least three times of h2, i.e., h2 is set to be much smaller than h1, , which is beneficial to improving the quality of the deposited thin film, and is saving the material used for manufacturing the baffle 11.

In particular, the width of the overlapping area e1 of the baffle 11 and the edge of the half-plate 12 to be deposited is between 2mm and 8 mm.

Specifically, the portion of the baffle 11 near the periphery of the deposition tank 111 is inclined downward, which is beneficial to improving the efficiency of depositing the thin film, and the specific inclination angle can be set according to the requirement of actually depositing the thin film, which is not limited by the invention.

Preferably, the material of the baffle 11 is ceramic or pure aluminum.

According to the chemical vapor deposition device, the deposition groove 111 is arranged in the area, corresponding to the half plate 12 to be deposited, of the baffle plate 11, the side of the deposition groove 111 is overlapped with the central axis of the baffle plate 11, and the distance between the remaining three sides and the corresponding side of the baffle plate 11 is the same, so that a film can be deposited on the half plate 12.

Please refer to fig. 11 and 12 together, which are a second embodiment of the cvd apparatus of the present invention, and the main difference between the second embodiment and the embodiment is that the half-plate 12 to be deposited is laid on the right side of the support base 13, the deposition groove 111 is located on the right side of the baffle plate 11, the distance between the side of the deposition groove 111 (i.e. the left side of the deposition groove 111) coinciding with the central axis of the baffle plate 11 and the corresponding left side of the baffle plate 11 is d1, the distances between the remaining three sides of the deposition groove 111 and the corresponding side of the baffle plate 11 are a1, b1 and c1, respectively, the width of the deposition groove 111 is L, wherein a1 b1 is c1, d1 is L + b1, and the rest parts are similar to those in the embodiment , which is not repeated herein.

In summary, the chemical vapor deposition apparatus of the present invention modifies the existing chemical vapor deposition apparatus for manufacturing an array substrate, and the deposition groove is disposed in the region of the baffle corresponding to the half-plate to be deposited, so that the side of the deposition groove coincides with the central axis of the baffle, and the distances between the remaining three sides and the corresponding sides of the baffle are the same, i.e., a thin film can be deposited on the half-plate, thereby reducing the investment cost for purchasing a new machine, and the modification cost is low, the modification period is short, and the production cost is effectively reduced.

As described above, it will be apparent to those skilled in the art that various other changes and modifications can be made based on the technical solution and the technical idea of the present invention, and all such changes and modifications should fall within the protective scope of the appended claims.

Claims

chemical vapor deposition apparatus, comprising a support base (13), a half plate (12) to be deposited laid flat on the support base (13) side, and a baffle plate (11) arranged on the half plate (12) to be deposited and shielding the peripheral edge of the half plate (12) to be deposited;

the baffle (11) is provided with a deposition groove (111) corresponding to the area of the half plate (12) to be deposited, and the deposition groove (111) is used for determining the film deposition area of the half plate (12) to be deposited;

the side of the deposition groove (111) is superposed with the central axis of the baffle plate (11), and the distances between the remaining three sides and the corresponding sides of the baffle plate (11) are the same;

the thickness of the peripheral edge of the baffle (11) is larger than that of the rest part of the baffle (11);

the peripheral edge of the baffle (11) has a thickness at least three times the thickness of the remainder of the baffle (11).
2. The chemical vapor deposition apparatus according to claim 1, wherein the baffle plate (11) and the deposition bath (111) are rectangular in shape.
3. Chemical vapor deposition apparatus according to claim 2, characterized in that the half-plate (12) to be deposited is laid flat on the left side of the support base (13) and the deposition tank (111) is located on the left side of the baffle plate (11).
4. Chemical vapor deposition apparatus according to claim 2, characterized in that the half-plate (12) to be deposited is laid flat on the right side of the support base (13), the deposition bath (111) being located on the right side of the baffle plate (11).
5. The chemical vapor deposition apparatus according to claim 1, characterized in that the width of the overlapping area (e1) of the baffle plate (11) with the edge of the half plate (12) to be deposited is 2mm to 8 mm.
6. Chemical vapor deposition apparatus according to claim 1, characterized in that the material of the baffle (11) is ceramic or pure aluminum.