CN107082635B - 一种残压比低的压敏电阻器及其应用 - Google Patents

一种残压比低的压敏电阻器及其应用 Download PDF

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CN107082635B
CN107082635B CN201710272563.XA CN201710272563A CN107082635B CN 107082635 B CN107082635 B CN 107082635B CN 201710272563 A CN201710272563 A CN 201710272563A CN 107082635 B CN107082635 B CN 107082635B
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piezoresistor
zinc oxide
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邱维军
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Xinchang Grace Electric Appliance Co Ltd
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Abstract

本发明公开了一种残压比低的压敏电阻器及其应用，所述残压比低的压敏电阻器，由压敏电阻芯片、硅橡胶封层、绝缘封层、电极和电极引线组成，本发明通过对氧化锌材料进行掺杂，细化了氧化锌的晶粒，增加了压敏电阻的表面密度，从而达到降低压敏电阻残压比的目的，提升了电阻器抗电流力冲击能力和非线性系数，使得压敏电阻器具有较高的电压梯度。

Description

一种残压比低的压敏电阻器及其应用
技术领域
本发明涉及电子元器件技术领域，具体涉及一种残压比低的压敏电阻器及其应用。
背景技术
过电压保护器是以高压高能型氧化锌压敏电阻元件为核心，采用不同的封装结构形式制成的产品，它适用于电力、电力电子、电气、电工、电信等行业中，对各种电力电子设备的浪涌电压冲击施加过压保护，压敏电阻是其电阻随所加的电压变化而非线性变化的一种电阻原件，即当施加电压值超过某一阀值电压时，其电阻迅速变化的电阻器，是一种自身电阻对外加电压敏感，且可以反复使用而不会损坏的电子原件，也称为“突波吸收器”，它主要用来保护电子产品或电子原件免受开关或雷击头发所产生的影响。压敏电阻在不工作时，相对于被保护的电子元件而言，具有很高的阻抗，而且不会改变设计电路特性，但当瞬间突波电压出现，压敏电阻的阻抗就会变低，只有几个欧姆，造成电路短路，从而保护电子产品或电子原件。
残压比是压敏电阻器极其重要的一项参数，残压比越低，表明压敏电阻器通过冲击大电流的残压越低，保护性能越好，残压比代表了压敏电阻抑制过电压的能力，也是电力系统输电设备绝缘配合的基础，近年来降低残压比已经称为氧化锌压敏电阻的主要研究方向，改变氧化锌压敏电阻残压比的方法有：改变氧化锌压敏电阻片的面积、通过改变参考电压梯度或残压梯度、改变氧化锌的晶粒尺寸、晶粒均匀度和晶界表面态密度以及晶粒的电阻率。
发明内容
针对现有技术的不足，本发明提供了一种残压比低的压敏电阻器及其应用，它以氧化锌压敏电阻元件为核心，通过对氧化锌晶体进行掺杂，改变了氧化锌晶体的粒径、均匀度和电阻率，从而达到降低压敏电阻残压比的目的，本发明的压敏电阻器具有性能优异益、稳定、综合性能好，性价比高的优点，具有很好的发展前景。
为实现以上目的，本发明通过以下技术方案予以实现：
一种残压比低的压敏电阻器，由压敏电阻芯片、硅橡胶封层、绝缘封层、电极和电极引线组成，所述压敏电阻芯片，由以下重量份的物质组成：掺杂氧化锌80～95份、三氧化二铋0.2～0.75份、二氧化硅1.8-2.8份、二氧化钛0.35-0.45份、硫化镍0.36-0.45份、碳化硅0.08-0.15份、氮化锆0.03-0.08份、三氧化二锑0.3-0.5份、三氧化二钇0.05-0.15份、钛酸铜钙0.8-1.5份。
优选的，所述压敏电阻芯片，由以下重量份的物质组成：掺杂氧化锌85-90份、三氧化二铋0.4-0.6份、二氧化硅2.02-2.46份、二氧化钛0.38-0.4份、硫化镍0.4-0.42份、碳化硅0.1-0.12份、氧化锆0.05-0.08份、三氧化二锑0.38-0.48份、三氧化二钇0.05-0.06份、钛酸铜钙0.8-1.2份。
优选的，所述压敏电阻芯片，由以下重量份的物质组成：掺杂氧化锌88份、三氧化二铋0.5份、二氧化硅2.32份、二氧化钛0.38份、硫化镍0.42份、碳化硅0.12份、氮化锆0.06份、三氧化二锑0.45份、三氧化二钇0.06份、钛酸铜钙1.05份。
优选的，所述掺杂氧化锌的掺杂元素为钒、镓、铟、铊、镁、铬、铁、锰、镍、铝、磷、氮、钒中的一种或多种元素。
优选的，所述掺杂氧化锌的掺杂浓度为0.5-2at.％。
优选的，所述掺杂氧化锌的粒径为10-50纳米。
本发明的残压比低的压敏电阻器的适用于发电机的转子侧过压吸收以及整流励磁电源的直流侧过压吸收，适用于海拔高度小于两千米，大气压力86～106KPa，环境温度-40～+85℃的环境。
本发明的有益效果：本发明对氧化锌进行掺杂，使掺杂原子进入氧化锌晶格占据并替代锌原子的位置，显著提高氧化锌的电导率和载流子浓度；掺杂还能细化氧化锌晶粒，降低尺寸，增加晶界表面密度，且掺杂后氧化锌压敏电阻的电阻率降低，从而降低了压敏电阻的残压比；本发明中三氧化二铋能够改善压敏陶瓷的电阻非线性和稳定性，并且降低了氧化锌压敏陶瓷的电阻率；通过加入二氧化硅，既能改善压敏镀组陶瓷片结构的均匀性，还能提高压敏电阻器的势垒高度和非线性系数；加入硫化镍提高了氧化锌压敏陶瓷的晶面势垒高度，使压敏电压升高，非线性系数增加，漏电电流降低，且还能降低氧化锌晶粒的粒径，使材料更加致密；三氧化二钇提高了氧化锌晶粒的电导率，抑制氧化锌晶粒的生长，细化晶粒尺寸，提升了压敏电阻器的电压梯度。本发明通过对氧化锌材料进行掺杂，细化了氧化锌的晶粒，增加了压敏电阻的表面密度，从而达到降低压敏电阻残压比的目的，提升了电阻器抗电流力冲击能力和非线性系数，使得压敏电阻器具有较高的电压梯度。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1：
一种残压比低的压敏电阻器，由压敏电阻芯片、硅橡胶封层、绝缘封层、电极和电极引线组成，所述压敏电阻芯片，由以下重量份的物质组成：钒掺杂氧化锌80份、三氧化二铋0.75份、二氧化硅2.02份、二氧化钛0.45份、硫化镍0.42份、碳化硅0.1份、氮化锆0.05份、三氧化二锑0.38份、三氧化二钇0.05份、钛酸铜钙1.0份，其中钒掺杂氧化锌的掺杂浓度为0.5at.％，晶体粒径约为30纳米。
本发明的残压比低的压敏电阻器的适用于发电机的转子侧过压吸收以及整流励磁电源的直流侧过压吸收，适用于海拔高度小于两千米，大气压力86～106KPa，环境温度-40～+85℃的环境。
实施例2：
一种残压比低的压敏电阻器，由压敏电阻芯片、硅橡胶封层、绝缘封层、电极和电极引线组成，所述压敏电阻芯片，由以下重量份的物质组成：锰、镍掺杂氧化锌85份、三氧化二铋0.4份、二氧化硅2.46份、二氧化钛0.38份、硫化镍0.4份、碳化硅0.15份、氮化锆0.08份、三氧化二锑0.48份、三氧化二钇0.05份、钛酸铜钙1.2份，其中钒掺杂氧化锌的掺杂浓度为1.5at.％，晶体粒径约为50纳米。
本发明的残压比低的压敏电阻器的适用于发电机的转子侧过压吸收以及整流励磁电源的直流侧过压吸收，适用于海拔高度小于两千米，大气压力86～106KPa，环境温度-40～+85℃的环境。
实施例3：
一种残压比低的压敏电阻器，由压敏电阻陶瓷片和不连续电极组成，所述压敏电阻陶瓷片，由以下重量份的物质组成：镓掺杂氧化锌90份、三氧化二铋0.6份、二氧化硅1.8份、二氧化钛0.4份、硫化镍0.45份、碳化硅0.08份、氮化锆0.03份、三氧化二钇0.06份、钛酸铜钙0.8份，其中钒掺杂氧化锌的掺杂浓度为1.2at.％，晶体粒径约为20纳米。
本发明的残压比低的压敏电阻器的适用于发电机的转子侧过压吸收以及整流励磁电源的直流侧过压吸收，适用于海拔高度小于两千米，大气压力86～106KPa，环境温度-40～+85℃的环境。
实施例4：
一种残压比低的压敏电阻器，由压敏电阻芯片、硅橡胶封层、绝缘封层、电极和电极引线组成，所述压敏电阻芯片，由以下重量份的物质组成：铊、镁、掺杂氧化锌95份、三氧化二铋0.2份、二氧化硅2.8份、二氧化钛0.35份、硫化镍0.36份、碳化硅0.12份、氮化锆0.08份、三氧化二锑0.5份、三氧化二钇0.15份、钛酸铜钙1.5份，其中钒掺杂氧化锌的掺杂浓度为2at.％，晶体粒径约为30纳米。
本发明的残压比低的压敏电阻器的适用于发电机的转子侧过压吸收以及整流励磁电源的直流侧过压吸收，适用于海拔高度小于两千米，大气压力86～106KPa，环境温度-40～+85℃的环境。
实施例5：
一种残压比低的压敏电阻器，由压敏电阻芯片、硅橡胶封层、绝缘封层、电极和电极引线组成，所述压敏电阻芯片，由以下重量份的物质组成：铬、铁、铝掺杂氧化锌88份、三氧化二铋0.5份、二氧化硅2.32份、二氧化钛0.38份、硫化镍0.42份、碳化硅0.12份、氮化锆0.06份、三氧化二锑0.45份、三氧化二钇0.06份、钛酸铜钙1.05份，其中钒掺杂氧化锌的掺杂浓度为1.8at.％，晶体粒径约为10纳米。
实施例1～4的压敏电阻器的性能测试数据参见表1。
表1：实施例1～4的压敏电阻器的性能测试数据
Figure BDA0001277801650000051
实验结果表明：本发明的残压比低的压敏电阻器具有优良的非线性伏安特性，适用于发电机的转子侧过压吸收以及整流励磁电源的直流侧过压吸收；在正常工作电压下运行时，漏电电压只有微安级别，残压比小。
综上，本发明实施例具有如下有益效果：本发明通过对氧化锌材料进行掺杂，细化了氧化锌的晶粒，增加了压敏电阻的表面密度，从而达到降低压敏电阻残压比的目的，提升了电阻器抗电流力冲击能力和非线性系数，使得压敏电阻器具有较高的电压梯度，本发明的压敏电阻器具有性能优异益、稳定、综合性能好，性价比高的优点，具有很好的发展前景。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (4)

1.一种残压比低的压敏电阻器，其特征在于，由压敏电阻芯片、硅橡胶封层、绝缘封层、电极和电极引线组成，所述压敏电阻芯片，由以下重量份的物质组成：掺杂氧化锌80～95份、三氧化二铋0.2～0.75份、二氧化硅1.8-2.8份、二氧化钛0.35-0.45份、硫化镍0.36-0.45份、碳化硅0.08-0.15份、氮化锆0.03-0.08份、三氧化二锑0.3-0.5份、三氧化二钇0.05-0.15份、钛酸铜钙0.8-1.5份，所述掺杂氧化锌的掺杂元素为钒、镓、铟、铊、镁、铬、铁、锰、镍、铝、磷、氮、钒中的一种或多种元素，所述掺杂氧化锌的掺杂浓度为0.5-2at.％，所述掺杂氧化锌的粒径为10-50纳米。
2.如权利要求1所述的残压比低的压敏电阻器，其特征在于，所述压敏电阻芯片，由以下重量份的物质组成：掺杂氧化锌85-90份、三氧化二铋0.4-0.6份、二氧化硅2.02-2.46份、二氧化钛0.38-0.4份、硫化镍0.4-0.42份、碳化硅0.1-0.12份、氮化锆0.05-0.08份、三氧化二锑0.38-0.48份、三氧化二钇0.05-0.06份、钛酸铜钙0.8-1.2份。
3.如权利要求2所述的残压比低的压敏电阻器，其特征在于，所述压敏电阻芯片，由以下重量份的物质组成：掺杂氧化锌88份、三氧化二铋0.5份、二氧化硅2.32份、二氧化钛0.38份、硫化镍0.42份、碳化硅0.12份、氮化锆0.06份、三氧化二锑0.45份、三氧化二钇0.06份、钛酸铜钙1.05份。
4.一种如权利要求1～3任一所述的残压比低的压敏电阻器的应用，其特征在于，所述残压比低的压敏电阻器的适用于发电机的转子侧过压吸收以及整流励磁电源的直流侧过压吸收，适用于海拔高度小于两千米，大气压力86～106KPa，环境温度-40～+85℃的环境。
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