CN107078209B - Hall element - Google Patents
Hall element Download PDFInfo
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- CN107078209B CN107078209B CN201580057173.XA CN201580057173A CN107078209B CN 107078209 B CN107078209 B CN 107078209B CN 201580057173 A CN201580057173 A CN 201580057173A CN 107078209 B CN107078209 B CN 107078209B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
Abstract
The present invention relates to a kind of S/N than excellent Hall element.Have substrate (100), first electrode (22a) of the configuration on substrate and second electrode (23a), configuration on substrate and the third electrode (22b) of the position opposite with first electrode, configures on substrate and the 4th electrode (23b) of the position opposite with second electrode and the magnet sensing part (10) being connect with first electrode to the 4th electrode.Magnet sensing part (10) has the first sense magnetic area (10-1), the second sense magnetic area (10-2) vertically intersected with the first sense magnetic area and the third sense magnetic area (10-3) being formed near intersection region (10-0) of rectangular shaped to 6th sense magnetic area (10-6), which is the region that the first sense magnetic area is intersected with the second sense magnetic area.
Description
Technical field
The present invention relates to a kind of Hall elements.
Background technique
In the past, Magnetic Sensor was applied to many Magnetic Sensor products such as current detection means, position detecting device.As
There is the Hall element using Hall effect in the typical example of Magnetic Sensor.
Hall element generally has magnet sensing part, the galvanic electrode pair for making current flow through magnet sensing part and for detecting suddenly
The output electrode pair of your electromotive force, moreover, being applied to sense magnetic according to detecting from output electrode to the hall electromotive force detected
The size and direction of the magnetic in portion.
For example, in the Hall element documented by patent document 1, four interior angle parts of cross Hall element are not
Right angle, and be set to give four inner corner portions and add the obtained shape in ramp down angle.
Fig. 1 is the structure chart for illustrating Hall element documented by patent document 1.Hall documented by patent document 1
Element has cross magnet sensing part 2, and both ends in one direction are provided with Hall terminal 5, in the other directions
Both ends are provided with current terminal 6.Magnet sensing part 2 is in cross shape, therefore there are four interior angle parts 3 for tool.Moreover, in these
The not instead of right angles of angle part 3, have been carried out ramp down angle.The corner portion 7 is dashed forward relative to interior angle part 3 in triangle plate
Out, in the pattern for the cross shape that size L in length and breadth is 200 μm, wide W is 100 μm, corner portion 7 is on one side X=10 μm
Size.According to this structure, the unbalance voltage generated by the geometric imbalance of interior angle part 3 can be reduced.
In addition, the shape of magnet sensing part is set as cross and magnetic will be felt in the Hall element documented by patent document 2
The tow sides of semiconductor chip, the raising of Lai Shixian sensitivity is arranged in portion.
Patent document 1: Japanese Unexamined Patent Publication 1-298354 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2003-101096 bulletin
Summary of the invention
Problems to be solved by the invention
In recent years, the miniaturization of Hall element is required with the miniaturization for requiring Magnetic Sensor product.Hall element
Miniaturization is related to the miniaturization of magnet sensing part, and the miniaturization of magnet sensing part leads to the deterioration of S/N (signal-to-noise ratio).When S/N deterioration, nothing
Method accurately detects the size for being applied to the magnetic of magnet sensing part.
All there is S/N deficiency such problems in the Hall element of above-mentioned patent document 1, the Hall element of patent document 2.
The present invention is completed in view of this problem, and its purpose is to provide a kind of Hall elements that S/N is excellent.
The solution to the problem
The 1st aspect of the present invention is a kind of Hall element, has substrate, the first electrode being formed on the substrate extremely
4th electrode and the magnet sensing part being connect respectively with the first electrode to the 4th electrode, it is described in the Hall element
Magnet sensing part has: the first sense magnetic area, rectangular shaped when overlooking；Second sense magnetic area, overlook when rectangular shaped and
Vertically intersect with the first sense magnetic area；And third sense magnetic area is formed in friendship when overlooking to 6th sense magnetic area
Pitch near region, the intersection region be when overlooking described in the first sense magnetic area and described second feel the region that intersects of magnetic area,
The first electrode and the third electrode are configured in when overlooking across the intersection region and opposite position, and described second
Electrode and the 4th electrode are configured in when overlooking across the intersection region and opposite position, described first will feel magnetic
Each vertex in region along be successively set as clockwise A1, A2, A3 and A4, by it is described second sense magnetic area each vertex along clockwise according to
Secondary when being set as B1, B2, B3 and B4, the first electrode is connected when overlooking with the A1 and the A2, and the second electrode is bowed
Apparent time is connected with the B1 and the B2, and the third electrode is connected when overlooking with the A3 and the A4, and the described 4th
Electrode is connected when overlooking with the B3 and the B4, in the line segment that will link the A1 and the A4 and links the B2 and institute
The intersection point for stating the line segment of B3 is set as C1, the line segment that will link the A2 and the A3 and the line segment for linking the B2 and B3
Intersection point is set as C2, the intersection point of the line segment for linking the A2 and the A3 and the line segment for linking the B1 and B4 is set as to C3,
The intersection point of the line segment for linking the A1 and the A4 and the line segment for linking the B1 and B4 is set as C4, the B2 will be linked
Be set as D1 with the point on the line segment of the C1, the point on the line segment for linking the A1 and the C1 be set as to D2, will connection described in
Point on the line segment of A2 and the C2 is set as D3, the point on the line segment for linking the B3 and the C2 is set as D4, will link institute
The point on the line segment of B4 and the C3 is stated to be set as D5, the point on the line segment for linking the A3 and the C3 is set as to D6, will link
When point on the line segment of the A4 and the C4 is set as D7, the point on the line segment for linking the B1 and the C4 is set as D8, institute
Stating third sense magnetic area is the region that the connection C1, the D1 and the D2 are formed by triangle, the 4th sense magnetic region
Domain is the region that the connection C2, the D3 and the D4 are formed by triangle, and the 5th sense magnetic area is described in connection
C3, the D5 and the D6 are formed by the region of triangle, and the 6th sense magnetic area is the connection C4, the D7 and institute
The region that D8 is formed by triangle is stated, the length for linking the line segment of the A1 and the A2 is being set as WIN, will connection described in
The length of the line segment of B1 and the B2 is set as WOUT, the length for linking the line segment of the A1 and the A4 is set as LIN, institute will be linked
The length for stating the line segment of B1 and the B4 is set as LOUT, by the third sense magnetic area to total face of the 6th sense magnetic area
When product is set as S, meet following formula (1)~(3) relationship,
[numerical expression 1]
X > 0, y > 0,0.7x+y≤0.7 ... (2)
Wherein,
[numerical expression 2]
0 < a≤0.14,0 <b≤0.68, x0=0.08, y0=0.59.
The 2nd aspect of the present invention is a kind of Hall element, has substrate, the first electrode being formed on the substrate extremely
4th electrode and the magnet sensing part being connect respectively with the first electrode to the 4th electrode, it is described in the Hall element
Magnet sensing part has: the first sense magnetic area, rectangular shaped when overlooking；Second sense magnetic area, overlook when rectangular shaped and
Vertically intersect with the first sense magnetic area；And third sense magnetic area is formed in friendship when overlooking to 6th sense magnetic area
Pitch near region, the intersection region be when overlooking described in the first sense magnetic area and described second feel the region that intersects of magnetic area,
The first electrode and the third electrode are configured in when overlooking across the intersection region and opposite position, and described second
Electrode and the 4th electrode are configured in when overlooking across the intersection region and opposite position, described first will feel magnetic
Each vertex in region along be successively set as clockwise A1, A2, A3 and A4, by it is described second sense magnetic area each vertex along clockwise according to
Secondary when being set as B1, B2, B3 and B4, the first electrode is connected when overlooking with the A1 and the A2, and the second electrode is bowed
Apparent time is connected with the B1 and the B2, and the third electrode is connected when overlooking with the A3 and the A4, and the described 4th
Electrode is connected when overlooking with the B3 and the B4, in the line segment that will link the A1 and the A4 and links the B2 and institute
The intersection point for stating the line segment of B3 is set as C1, the line segment that will link the A2 and the A3 and the line segment for linking the B2 and B3
Intersection point is set as C2, the intersection point of the line segment for linking the A2 and the A3 and the line segment for linking the B1 and B4 is set as to C3,
The intersection point of the line segment for linking the A1 and the A4 and the line segment for linking the B1 and B4 is set as C4, the B2 will be linked
Be set as D1 with the point on the line segment of the C1, the point on the line segment for linking the A1 and the C1 be set as to D2, will connection described in
Point on the line segment of A2 and the C2 is set as D3, the point on the line segment for linking the B3 and the C2 is set as D4, will link institute
The point on the line segment of B4 and the C3 is stated to be set as D5, the point on the line segment for linking the A3 and the C3 is set as to D6, will link
When point on the line segment of the A4 and the C4 is set as D7, the point on the line segment for linking the B1 and the C4 is set as D8, institute
Stating third sense magnetic area is the region that the connection C1, the D1 and the D2 are formed by triangle, the 4th sense magnetic region
Domain is the region that the connection C2, the D3 and the D4 are formed by triangle, and the 5th sense magnetic area is described in connection
C3, the D5 and the D6 are formed by the region of triangle, and the 6th sense magnetic area is the connection C4, the D7 and institute
The region that D8 is formed by triangle is stated, the length for linking the line segment of the A1 and the A2 is being set as WIN, will connection described in
The length of the line segment of B1 and the B2 is set as WOUT, the length for linking the line segment of the A1 and the A4 is set as LIN, institute will be linked
The length for stating the line segment of B1 and the B4 is set as LOUT, by the third sense magnetic area to total face of the 6th sense magnetic area
When product is set as S, meet following formula (4)~(6) relationship,
[numerical expression 3]
X > 0, y > 0,0.7x+y≤0.7 ... (5)
Wherein,
[numerical expression 4]
0 < a≤0.1,0 <b≤0.54, x0=0.08, y0=0.62.
The 3rd aspect of the present invention is a kind of Hall element, have substrate, the first electrode being formed on the substrate, with
Third electrode that the first electrode is formed opposite to each other, second electrode, the 4th electrode formed opposite to each other with the second electrode,
And the magnet sensing part being connect respectively with the first electrode to the 4th electrode, in the Hall element, the magnet sensing part tool
Standby: the first sense magnetic area is the region being clipped in the middle by the first electrode and the third electrode, is without departing from the sense
The region of rectangular shaped when the vertical view of the maximum area in magnetic portion；Second sense magnetic area, is by the second electrode and described
The region that 4th electrode is clipped in the middle, when being without departing from the vertical view of the maximum area of the magnet sensing part rectangular shaped and with it is described
The region that first sense magnetic area is vertically intersected；And third sense magnetic area is formed in friendship when overlooking to 6th sense magnetic area
Pitch near region, the intersection region be when overlooking described in the first sense magnetic area and described second feel the region that intersects of magnetic area,
By the vertex of the first electrode side in each vertex of the first sense magnetic area is set as A1, A2, the vertex of third electrode side is set
B1, B2, third electrode side are set as A3, A4, by the vertex of the second electrode side in each vertex of the second sense magnetic area
Vertex is set as B3, B4, is set as the intersection point of the line segment for linking the A1 and the A4 and the line segment for linking the B2 and B3
C1, the intersection point of the line segment for linking the A2 and the A3 and the line segment for linking the B2 and B3 is set as C2, institute will be linked
The intersection point stated the line segment of the A2 and A3 and link the line segment of the B1 and B4 is set as C3, will link the A1 and the A4
Line segment and link the intersection point of line segment of the B1 and B4 and be set as C4, by the point on the line segment for linking the B2 and the C1
Be set as D1, the point on the line segment for linking the A1 and the C1 be set as to D2, will be on the line segment that the A2 and the C2 be linked
Point be set as D3, the point on the line segment for linking the B3 and the C2 be set as to D4, will be on the line segment that the B4 and the C3 be linked
The point line segment that is set as D5, the point on the line segment for linking the A3 and the C3 is set as D6, will link the A4 and the C4
On point when being set as D7, the point on the line segment for linking the B1 and the C4 being set as D8, the third sense magnetic area is connection
The C1, the D1 and the D2 are formed by the region of triangle, and the 4th sense magnetic area is the connection C2, the D3
And the D4 is formed by the region of triangle, the 5th sense magnetic area is the connection C3, the D5 and D6 institute shape
At triangle region, the 6th sense magnetic area is that the connection C4, the D7 and the D8 are formed by triangle
The length for linking the line segment of the A1 and the A2 is being set as W by regionIN, will link the B1 and the B2 line segment length
Degree is set as WOUT, the length for linking the line segment of the A1 and the A4 is set as LIN, the line segment of the B1 and the B4 will be linked
Length is set as LOUT, when total area of the third sense magnetic area to the 6th sense magnetic area is set as S, meet following
Formula (7)~(9) relationship,
[numerical expression 5]
X > 0, y > 0,0.7x+y≤0.7,0 a≤0.1 <, 0 b≤0.54 <, x0=0.08, y0=0.62 ... (8)
Wherein,
[numerical expression 6]
The effect of invention
According to one method of the present invention, it can be realized S/N than excellent Hall element.
Detailed description of the invention
Fig. 1 is the structure chart for illustrating Hall element documented by patent document 1.
Fig. 2 is the structure chart (one) for illustrating the embodiment of Hall element according to the present invention.
Fig. 3 be for illustrating the embodiment of Hall element according to the present invention structure chart (secondly).
(a) and (b) of Fig. 4 is for illustrating that the position of electrode occurs inclined and with ARM1 and ARM2 shown in Fig. 3
The characteristic of Hall element when shifting changes the figure of few situation.
Fig. 5 is the figure for showing the neighboring region adjacent with magnet sensing part.
Fig. 6 is the figure for the first sense magnetic area and the second sense magnetic area in explanatory diagram 2.
Fig. 7 is the figure for the third sense magnetic area in explanatory diagram 2.
(a) of Fig. 8~(c) is to illustrate that S/N becomes the figure of the curve in 1.4 times or more of region from 1.2 times or more.
(a) of Fig. 9~(c) is to illustrate that S/N becomes the figure of the curve in 1.7 times or more of region from 1.5 times or more.
Figure 10 is the structure chart for illustrating the preferred shape of the Hall element of present embodiment.
Figure 11 is the sectional view for the Hall element that the magnet sensing part in present embodiment is formed in tabletop configuration.
Figure 12 is the sectional view for the Hall element that the magnet sensing part in present embodiment is formed in substrate.
Specific embodiment
In detailed description below, embodiments of the present invention are completely understood and records many spies in order to provide
Fixed specific structure.It is not limited to this specific specific structure however, being clear that and other implementations can be implemented
Mode.In addition, the following embodiments and the accompanying drawings is not to be defined to invention involved in claims.
Hereinafter, being explained with reference to embodiments of the present invention.
Fig. 2 is the structure chart (one) for illustrating the embodiment of Hall element according to the present invention.This embodiment party
The Hall element of formula be have substrate 100, the first electrode 22a to the 4th electrode 23b that is formed on substrate 100 and with first
Electrode 22a to the 4th electrode 23b connection magnet sensing part 10 Hall element.
That is, the Hall element of present embodiment has substrate 100, the first electrode 22a of configuration on the substrate 100
The third electrode 22b of the position opposite on the substrate 100 and with first electrode 22a, configuration are in base with second electrode 23a, configuration
It 4th electrode 23b of on the plate 100 and position opposite with second electrode 23a and connect with first electrode to the 4th electrode
Magnet sensing part 10.First electrode 22a and third electrode 22b is the galvanic electrode pair for making current flow through magnet sensing part 10.Second electricity
Pole 23a and the 4th electrode 23b is the output electrode pair for detecting hall electromotive force.
In addition, in the present embodiment, first electrode 22a and third electrode 22b are set as galvanic electrode pair, by the second electricity
Pole 23a and the 4th electrode 23b are set as output electrode pair, as long as but the electrode pair comprising first electrode 22a and third electrode 22b
An electrode with the electrode centering comprising second electrode 23a and the 4th electrode 23b is to being for making current flow through magnet sensing part 10
Galvanic electrode to, another electrode to be for detect the output electrode of hall electromotive force to.
Magnet sensing part 10 has the first sense magnetic area 10-1 of the rectangular shaped when overlooking substrate 100, overlooks substrate 100
When rectangular shaped and with first sense magnetic area 10-1 vertically intersect second sense magnetic area 10-2 and overlook substrate
Third sense magnetic area 10-3 near the 10-0 of intersection region is formed in when 100 to 6th sense magnetic area 10-6, the intersection region
10-0 is the region that first sense magnetic area 10-1 intersects with the second sense magnetic area 10-2 when overlooking substrate 100.In addition, " overlooking
When " mean " when overlooking substrate 100 ".
By each vertex of the first sense magnetic area 10-1 along being successively set as A1, A2, A3, A4 clockwise.First electrode 22a is overlooked
When be connected with A1 and A2, third electrode 22b overlook when be connected with A3 and A4.
In addition, by each vertex of the second sense magnetic area 10-2 along being successively set as B1, B2, B3, B4 clockwise.Second electrode
23a is connected when overlooking with B1 and B2, and the 4th electrode 23b is connected when overlooking with B3 and B4.
By link A1 and A4 line segment be set as C1 with the intersection point for the line segment for connect B2 and B3, by connection A2 and A3 line segment and
The intersection point for connecting the line segment of B2 and B3 is set as C2, and the line segment for linking A2 and A3 is set as with the intersection point for the line segment for connecting B1 and B4
The line segment for linking A1 and A4 is set as C4 with the intersection point for the line segment for connecting B1 and B4 by C3.The region surrounded by C1~C4 is to intersect
Region 10-0.
When by link B2 and C1 line segment on point be set as D1, by link A1 and C1 line segment on point be set as D2, will even
Tie the line segment that the point on the line segment of A2 and C2 is set as D3, the point on the line segment for linking B3 and C2 is set as D4, will link B4 and C3
On point be set as D5, by link A3 and C3 line segment on point be set as D6, by link A4 and C4 line segment on point be set as D7, will
When point on the line segment of connection B1 and C4 is set as D8, third sense magnetic area 10-3 is that connection C1, D1 and D2 are formed by triangle
Region, the 4th sense magnetic area 10-4 is to link C2, D3 and D4 to be formed by the region of triangle, and the 5th sense magnetic area 10-5 is
Connection C3, D5 and D6 are formed by the region of triangle, and 6th sense magnetic area 10-6 is that connection C4, D7 and D8 are formed by triangle
The region of shape.
In addition, when the length for linking the line segment of A1 and A2 is set as WIN, the length of line segment for linking B1 and B2 is set as
WOUT, the length of line segment for linking A1 and A4 is set as LIN, the length of line segment for linking B1 and B4 is set as LOUT, by third sense magnetic
When total area of region 10-3 to 6th sense magnetic area 10-6 are set as S, it is configured to meet following formula (10)~(12) pass
System.
[numerical expression 7]
X > 0, y > 0,0.7x+y≤0.7 ... (11)
Wherein,
[numerical expression 8]
0 < a≤0.14,0 <b≤0.68, x0=0.08, y0=0.59.
Fig. 3 be for illustrating the embodiment of Hall element according to the present invention structure chart (secondly).To have with
The constituent element of Fig. 2 identical function marks same label.
The length for linking the line segment of A1 and D2 is set as ARM1, the length for linking the line segment of A2 and D3 is set as ARM2, it will
The length for linking the line segment of A3 and D6 is set as ARM3, and the length for linking the line segment of A4 and D7 is set as ARM4, will link B1 and D8
The length of line segment be set as ARM5, the length for linking the line segment of B2 and D1 is set as ARM6, the length of the line segment of B3 and D4 will be linked
Degree is set as ARM7, and the length for linking the line segment of B4 and D5 is set as ARM8.ARM1 to ARM8 can be all 0, in addition, in order to reduce
The characteristic of Hall element when the position of electrode shifts changes, and it is all that ARM1 to ARM8 can also remove ARM1 to ARM8
Value other than 0.
(a) and (b) of Fig. 4 is for illustrating that the position of electrode occurs inclined and with ARM1 and ARM2 shown in Fig. 3
The characteristic of Hall element when shifting changes the figure of few situation.(a) of Fig. 4 shows the case where with ARM1 and ARM2, Fig. 4's
(b) the case where showing without ARM1 and ARM2.In addition, marking same label with the constituent element of Fig. 2 identical function to having.
In (a) of Fig. 4, there is ARM1 and ARM2, therefore even if to arrow direction positional shift, A1 occur for first electrode
The distance between A2 does not also change.Thus, even if first electrode position shifts, the variation of characteristic is also very small.
In addition, not having ARM, therefore first electrode is formed as during forming first electrode in (b) of Fig. 4
When positional shift has occurred to arrow direction from original position, the distance between A1 and A2 significantly change.As be described hereinafter that
Sample, the S/N of Hall element is because of the distance between A1 and A2, i.e. WINDifference and significantly change.Thus, when first electrode occurs
When positional shift, characteristic significantly changes.
Similarly, in the Hall element with ARM3 to ARM8, even if second electrode is inclined to the 4th electrode generation position
It moves, the variation of characteristic is also very small.
ARM1 to ARM8 is bigger, then the variation of characteristic when positional shift significantly occurs for electrode becomes fewer.ARM1,
At least one of ARM2, ARM3 and ARM4 can be 0.5% × LINMore than, it is also possible to 1.0% × LINMore than, may be used also
To be 2.0% × LINMore than.
ARM1 and ARM2 is preferably identical size, and ARM3 and ARM4 are preferably identical size.
Similarly, at least one of ARM5, ARM6, ARM7 and ARM8 can be 0.5% × LOUTMore than, it can also be with
It is 1.0% × LOUTMore than, it can also be 2.0% × LOUTMore than.ARM5 and ARM6 is preferably identical size, ARM7 and ARM8
Preferably identical size.
In addition, the sense of third sense magnetic area 10-3 and the 4th magnetic area 10-4 is configured in when overlooking relative to straight line M1 line pair
The position of title, straight line M1 are the straight of the midpoint connection for the line segment that will link the midpoint of the line segment of A1 and A2 and link A3 and A4
Line, the 5th sense magnetic area 10-5 and 6th sense magnetic area 10-6 are configured in when overlooking relative to the symmetrical position straight line M1.
By being set as this structure, hall electromotive force when electric current being made to flow to the 4th electrode 23b from second electrode 23a with make
The difference of hall electromotive force when electric current flows to second electrode 23a from the 4th electrode 23b becomes smaller.I.e. it is capable to freely set
The flow direction of constant current, so that the installation freedom degree of Hall element improves.
Third sense magnetic area 10-3 and 6th sense magnetic area 10-6 are configured in symmetrical relative to straight line M2 when overlooking
Position, straight line M2 are the straight lines of the midpoint connection of the midpoint that will link the line segment of B1 and B2 and the line segment of connection B3 and B4, the
Four sense magnetic area 10-4 and the 5th sense magnetic area 10-5 are configured in when overlooking relative to the symmetrical position straight line M2.
By being set as this structure, hall electromotive force when electric current being made to flow to third electrode 22b from first electrode 22a with make
The difference of hall electromotive force when electric current flows to first electrode 22a from third electrode 22b becomes smaller.I.e. it is capable to freely set
The flow direction of constant current, so that the installation freedom degree of Hall element improves.
It in addition, magnet sensing part 10 is when looking down for relative to the symmetrical shape of straight line M1, and is relative to straight line M2 line
Symmetrical shape.
In addition, the shape of third sense magnetic area 10-3 to 6th sense magnetic area 10-6 are the shape of mutual congruence when looking down
Shape.
According to this structure, can alternatively using galvanic electrode to and output electrode pair, thus the installation of Hall element
Freedom degree improves.
In addition, the shape of third sense magnetic area 10-3 to 6th sense magnetic area 10-6 can also not be mutually complete when looking down
Deng shape.
In addition, the sense of third sense magnetic area 10-3 and the 4th magnetic area 10-4 can also be configured in relatively when looking down
In the symmetrical position straight line M1, the 5th sense magnetic area 10-5 and 6th sense magnetic area 10-6 can also not matched when looking down
It sets relative to the symmetrical position straight line M1.
In addition, third sense magnetic area 10-3 and 6th sense magnetic area 10-6 can also be configured in relatively when looking down
In the symmetrical position straight line M2, the 4th sense magnetic area 10-4 and the 5th sense magnetic area 10-5 can also not matched when looking down
It sets relative to the symmetrical position straight line M2.
In addition, magnet sensing part 10 can also may not be phase when looking down without respect to the symmetrical shape of straight line M1
Shape symmetrical for straight line M2.
First electrode 22a and third electrode 22b is relative to the symmetrical shape of straight line M1, second electrode when looking down
23a and the 4th electrode 23b is relative to the symmetrical shape of straight line M2 when looking down.
Even if positional shift occurs for electrode, the variation for feeling the contact length of magnetic area and electrode is also few, thus even if electrode
Positional shift occurs, the variation of characteristic is also few.
In addition, first electrode 22a links the virtual line of first electrode 22a and third electrode 22b to the 4th electrode 23b
The mode intersected when looking down with the virtual line of connection second electrode 23a and the 4th electrode 23b configures on the substrate 100.?
In present embodiment, link the virtual line and the electricity of connection second electrode 23a and the 4th of first electrode 22a and third electrode 22b
The virtual line of pole 23b is orthogonal when looking down.
In addition, WIN/WOUTFor example, 0.05 or more and 20 or less, 0.1 or more and 10 or less, 0.2 or more and 5 or less.
LIN/LOUTFor example, 0.05 or more and 20 or less, 0.2 or more and 5 or less, 0.5 or more and 2 or less, 0.8 or more and
1.25 following.
LINFor example, 1 μm or more and 300 μm or less, 10 μm or more and 200 μm or less, 30 μm or more and 150 μm or less.
LOUTFor example, 1 μm or more and 300 μm or less, 10 μm or more and 200 μm or less, 30 μm or more and 150 μm or less.
Fig. 5 is the figure for showing the neighboring region adjacent with magnet sensing part.Magnet sensing part 10 and adjacent area are distinguished according to resistivity
Domain, high 10 times of resistivity or more of the resistivity ratio magnet sensing part 10 of neighboring region.In figure appended drawing reference 31-3~31-6 indicate with
Neighboring region of the third sense magnetic area 10-3 adjacent neighboring region extremely with 6th sense magnetic area 10-6 adjoining.In addition, to having
Same appended drawing reference is marked with the constituent element of Fig. 2 identical function.
Magnet sensing part 10 is the impurity being added in the semiconductors such as GaAs, InSb, InAs, Si as alms giver or acceptor
Region.Neighboring region is similarly formed by semiconductors such as GaAs, InSb, InAs, Si, but becomes the miscellaneous of alms giver or acceptor
Matter is few, therefore resistivity is high.
The resistivity of the first sense magnetic area 10-1 to each region of 6th sense magnetic area 10-6 is the resistance of equal extent
Rate.For example, when the resistivity of the first sense magnetic area 10-1 is set as R1 (Ω m), the second sense magnetic area 10-2 to 6th sense
Resistivity R2~R6 of magnetic area 10-6 is preferably 0.25 × R1 or more and 4 × R1 hereinafter, more preferably 0.5 × R1 or more and 2
× R1 or less.
The sheet carrier density of the sheet carrier density ratio magnet sensing part 10 of neighboring region is small, for example, magnet sensing part 10
2.0% or less sheet carrier density.
The sheet carrier density of the first sense magnetic area 10-1 to each region of 6th sense magnetic area 10-6 is same journey
The density of degree.For example, when the sheet carrier density of the first sense magnetic area 10-1 is set as D1 (a/cm2) when, the second sense magnetic region
Sheet carrier density D2~D6 of domain 10-2 to 6th sense magnetic area 10-6 be preferably 0.25 × D1 or more and 4 × D1 hereinafter,
More preferably 0.5 × D1 or more and 2 × D1 or less.
Substrate 100 is also possible to the semiconductor substrates such as GaAs, InSb, InAs, Si substrate.
Fig. 6 is the figure for the first sense magnetic area and the second sense magnetic area in explanatory diagram 2.First, which feels magnetic area 10-1, is
Being connect with first electrode 22a and third electrode 22b and between first electrode 22a and third electrode 22b in magnet sensing part 10
Without departing from the region of magnet sensing part 10, maximum area rectangular shape in region.That is, the region of the lower section of electrode, electricity
The region on the gentle slope near extremely is not included in the first sense magnetic area 10-1.
In addition, second sense magnetic area 10-2 be being connect with second electrode 23a and the 4th electrode 23b in magnet sensing part 10 and
Without departing from the area of magnet sensing part 10, maximum area rectangular shape in region between second electrode 23a and the 4th electrode 23b
Domain.That is, the region on the gentle slope near the region of the lower section of electrode, electrode is not included in the second sense magnetic area 10-2.
Fig. 7 is the figure for the third sense magnetic area in explanatory diagram 2.
Third sense magnetic area 10-3 is the region for linking C1, D1 and D2 and being formed by triangle.D1 and D2 be make link C1,
D1 and D2 be formed by triangle without departing from magnet sensing part 10 and make link C1, D1 and D2 be formed by triangle area it is maximum
Point.4th sense magnetic area also defines D3 to 6th sense magnetic area to D8 in the same way.
<simulation result>
Firstly, determining WIN=WOUT=52 μm, LIN=LOUT=100 μm, third sense magnetic area to 6th sense magnetic area
The S/N of the Hall element (following is benchmark Hall element) of the shape of total area S=0.
Then, for the Hall element of present embodiment, by LIN100 μm are fixed as, L is madeOUTVariation for 80 μm, 90 μm,
100 μm, 110m, 120 μm, make W respectivelyIN、WOUT, the position point D1~point D8 carry out various change, to make 130,000 samples.
Finally, being measured to the S/N of produced sample, it is normalized with the S/N of benchmark Hall element.
(a) of (a) of Fig. 8~(c) and Fig. 9~(c) are to mark obtained measurement result with horizontal axis x and longitudinal axis y
Figure.Wherein, x and y are defined as follows.
[numerical expression 9]
In addition, S is total area of the third sense magnetic area to 6th sense magnetic area.
(a) of Fig. 8 is the figure that S/N is become to 1.2 times or more of region and is expressed as curve.The oval A of (a) of Fig. 8 is (empty
Line) be become for approximate S/N 1.2 times or more region dotted line.Ellipse A shown in (a) of Fig. 8 is by a=0.14, b=
0.68、x0=0.08, y0=0.59 is updated to following formula (14) obtained ellipse.
[numerical expression 10]
In the region of oval A and meet in the region of following formula (15) Hall element of (the region A ' of (a) of Fig. 8)
In, S/N becomes 1.2 times or more.When improving S/N for 1.2 times or more, position resolution when can be by correction of jitter is set as
2 times.
X > 0, y > 0,0.7x+y≤0.7 ... (15)
In addition, a be elliptical short axle length, b be elliptical long axis length, ellipse for expression Hall element institute
The region of the mark value of the S/N determined.
(b) of Fig. 8 is the figure that S/N is become to 1.3 times or more of region and is expressed as curve.The oval B of (b) of Fig. 8 is (empty
Line) be become for approximate S/N 1.3 times or more region dotted line.Ellipse B shown in (b) of Fig. 8 is by a=0.12, b=
0.61、x0=0.08, y0=0.59 is updated to formula (14) obtained ellipse.In the region of oval B and meet the areas of formula (15)
In domain in the Hall element of (the region B ' of (b) of Fig. 8), S/N becomes 1.3 times or more.When being 1.3 times or more by S/N improvement,
Even faint magnetic signal can be also detected.
(c) of Fig. 8 is the figure that S/N is become to 1.4 times or more of region and is expressed as curve.The oval C of (c) of Fig. 8 is (empty
Line) be become for approximate S/N 1.4 times or more region dotted line.Ellipse C shown in (c) of Fig. 8 is by a=0.1, b=
0.54、x0=0.08, y0=0.62 is updated to formula (14) obtained ellipse.In the region of oval C and meet the areas of formula (15)
In domain in the Hall element of (the region C ' of (c) of Fig. 8), S/N becomes 1.4 times or more.
(a) of Fig. 9 is the figure that S/N is become to 1.5 times or more of region and is expressed as curve.The oval D of (a) of Fig. 9 is (empty
Line) be become for approximate S/N 1.5 times or more region dotted line.Ellipse D shown in (a) of Fig. 9 is by a=0.09, b=
0.45、x0=0.08, y0=0.62 is updated to formula (14) obtained ellipse.In the region of oval D and meet the areas of formula (15)
In domain in the Hall element of (the region D ' of (a) of Fig. 9), S/N becomes 1.5 times or more.
(b) of Fig. 9 is the figure that S/N is become to 1.6 times or more of region and is expressed as curve.The oval E of (b) of Fig. 9 is (empty
Line) be become for approximate S/N 1.6 times or more region dotted line.Ellipse E shown in (b) of Fig. 9 is by a=0.064, b=
0.32、x0=0.08, y0=0.62 is updated to formula (14) obtained ellipse.In the region of oval E and meet the areas of formula (15)
In domain in the Hall element of (the region E ' of (b) of Fig. 9), S/N becomes 1.6 times or more.
(c) of Fig. 9 is the figure that S/N is become to 1.7 times or more of region and is expressed as curve.The oval F of (c) of Fig. 9 is (empty
Line) be become for approximate S/N 1.7 times or more region dotted line.Ellipse F shown in (c) of Fig. 9 is by a=0.04, b=
0.19、x0=0.08, y0=0.62 is updated to formula (14) obtained ellipse.In the region of oval F and meet the areas of formula (15)
In domain in the Hall element of (the region F ' of (c) of Fig. 9), S/N becomes 1.7 times or more.
A, the relationship of b, x, y as shown in table 1 below as.
[table 1]
| S/N1.2 times | S/N1.3 times | S/N1.4 times | S/N1.5 times | S/N1.6 times | S/N1.7 times | |
| a | 0.14 | 0.12 | 0.1 | 0.09 | 0.064 | 0.04 |
| b | 0.68 | 0.61 | 0.54 | 0.45 | 0.32 | 0.19 |
| X0 | 0.08 | 0.08 | 0.08 | 0.08 | 0.08 | 0.08 |
| Y0 | 0.59 | 0.59 | 0.62 | 0.62 | 0.62 | 0.62 |
Figure 10 is the structure chart for illustrating the preferred shape of the Hall element of present embodiment.It can according to measurement result
Know, works as WINAnd WOUTWhen total area S of small, third sense magnetic area to 6th sense magnetic area is big, S/N is got higher.But increase face
Product S is associated with ARM1~ARM8 is reduced, thus associated with the variation of the characteristic of Hall element.S/N is big and because of electricity in order to obtain
Characteristic caused by the positional shift of pole changes few Hall element, as long as being set as having by the shape of magnet sensing part as shown in Figure 10
There are short ARM1~ARM8, small WINAnd WOUTAnd the shape of big area S.
Figure 11 is the sectional view for the Hall element that the magnet sensing part in present embodiment is formed in tabletop configuration.Magnet sensing part 10
It can also be formed in the tabletop configuration formed on the substrate 100.
That is, magnet sensing part 10 is formed in the tabletop configuration formed on the substrate 100, the outer rim of tabletop configuration is being bowed
Apparent time along connection B2 and D1 line segment, link D1 and D2 line segment, link D2 and A1 line segment, link A2 and D3 line segment,
Link D3 and D4 line segment, link D4 and B3 line segment, link B4 and D5 line segment, link D5 and D6 line segment, connection D6 and
The line segment of A3, the line segment for linking A4 and D7, the line segment for linking D7 and D8 and the line segment for linking D8 and B1.
Figure 12 is the sectional view for the Hall element that the magnet sensing part in present embodiment is formed in substrate, links first electrode
The straight line of 22a and third electrode 22b are section.First sense magnetic area 10-1 to 6th sense magnetic area 10-6 can also be formed in base
In plate 100.
As previous Hall element, in the case where simple cross Hall element, that is to say, that in magnet sensing part
In the case where only having the first sense magnetic area and the second sense magnetic area, there is no the third sense magnetic areas in present embodiment to the
Six sense magnetic areas, therefore S becomes 0, y as 0.
In addition, the shape for the Hall element that geometrically can have is to make in the Hall element of present embodiment
It is defined with the numerical expression of x > 0 and y > 0 and 0.7x+y≤0.7.
<manufacturing method>
For the shape for the distance relation for being set as the shape of magnet sensing part 10 to have above-mentioned, as long as magnet sensing part 10 will be formed
The shape of used mask is designed to above-mentioned distance relation when shape.
Embodiments of the present invention are explained above, but technical scope of the invention is not limited to above-mentioned embodiment
Documented technical scope.It is clear that, above-mentioned embodiment can be added more according to the record of claims
Kind change or improvement, it can include within the technical scope of the present invention that this change, which is added, or improves obtained mode also.
Description of symbols
2: magnet sensing part；3: interior angle part；5: Hall terminal；6: current terminal；7: corner portion；10: magnet sensing part；10-0: it hands over
Pitch region；10-1: the first sense magnetic area；10-2: the second sense magnetic area；10-3: third sense magnetic area；10-4: third sense magnetic region
Domain；10-5: third sense magnetic area；10-6: 6th sense magnetic area；22a: first electrode；22b: third electrode；23a: the second electricity
Pole；23b: the four electrode；31-3~31-6: neighboring region；100: substrate.
Claims (25)
1. a kind of Hall element has substrate, the first electrode being formed on the substrate, second electrode, third electrode and
Four electrodes and the magnet sensing part connecting respectively with the first electrode to the 4th electrode, the Hall element be characterized in that,
The magnet sensing part has:
First sense magnetic area, rectangular shaped when overlooking；
Second sense magnetic area, overlook when rectangular shaped and with it is described first sense magnetic area vertically intersect；And
Third sense magnetic area, the 4th sense magnetic area, the 5th sense magnetic area and 6th sense magnetic area, are formed in the zone of intersection when overlooking
Near domain, the intersection region be when overlooking described in the first sense magnetic area and described second feel the region that intersects of magnetic area,
The first electrode and the third electrode are configured in when overlooking across the intersection region and opposite position,
The second electrode and the 4th electrode are configured in when overlooking across the intersection region and opposite position,
By it is described first sense magnetic area each vertex along be successively set as clockwise A1, A2, A3 and A4,
By it is described second sense magnetic area each vertex along be successively set as B1, B2, B3 and B4 clockwise when,
The first electrode is connected when overlooking with the A1 and the A2,
The second electrode is connected when overlooking with the B1 and the B2,
The third electrode is connected when overlooking with the A3 and the A4,
4th electrode is connected when overlooking with the B3 and the B4,
By link the line segment of the A1 and the A4 and link the B2 and B3 line segment intersection point be set as C1,
By the intersection point of the line segment for linking the A2 and the A3 and the line segment for linking the B2 and B3 be set as C2,
By the intersection point of the line segment for linking the A2 and the A3 and the line segment for linking the B1 and B4 be set as C3,
By the intersection point of the line segment for linking the A1 and the A4 and the line segment for linking the B1 and B4 be set as C4,
By the point on the line segment for linking the B2 and the C1 be set as D1,
By the point on the line segment for linking the A1 and the C1 be set as D2,
By the point on the line segment for linking the A2 and the C2 be set as D3,
By the point on the line segment for linking the B3 and the C2 be set as D4,
By the point on the line segment for linking the B4 and the C3 be set as D5,
By the point on the line segment for linking the A3 and the C3 be set as D6,
By the point on the line segment for linking the A4 and the C4 be set as D7,
When point on the line segment for linking the B1 and the C4 is set as D8,
The third sense magnetic area is the region that the connection C1, the D1 and the D2 are formed by triangle,
The 4th sense magnetic area is the region that the connection C2, the D3 and the D4 are formed by triangle,
The 5th sense magnetic area is the region that the connection C3, the D5 and the D6 are formed by triangle,
The 6th sense magnetic area is the region that the connection C4, the D7 and the D8 are formed by triangle,
The length for linking the line segment of the A1 and the A2 is being set as Win、
The length for linking the line segment of the B1 and the B2 is set as Wout、
The length for linking the line segment of the A1 and the A4 is set as Lin、
The length for linking the line segment of the B1 and the B4 is set as Lout、
When total area of the third sense magnetic area to the 6th sense magnetic area is set as S, meet following formula (1)~
(3) relationship,
X > 0, y > 0,0.7x+y≤0.7 ... (2),
Wherein,
0 < a≤0.14,0 <b≤0.68, x0=0.08, y0=0.59.
2. Hall element according to claim 1, which is characterized in that
The a and b meets the relationship of 0 < a≤0.12,0 <b≤0.61.
3. a kind of Hall element has substrate, the first electrode being formed on the substrate, second electrode, third electrode and
Four electrodes and the magnet sensing part connecting respectively with the first electrode to the 4th electrode, the Hall element be characterized in that,
The magnet sensing part has:
First sense magnetic area, rectangular shaped when overlooking；
Second sense magnetic area, overlook when rectangular shaped and with it is described first sense magnetic area vertically intersect；And
Third sense magnetic area, the 4th sense magnetic area, the 5th sense magnetic area and 6th sense magnetic area, are formed in the zone of intersection when overlooking
Near domain, the intersection region be when overlooking described in the first sense magnetic area and described second feel the region that intersects of magnetic area,
The first electrode and the third electrode are configured in when overlooking across the intersection region and opposite position,
The second electrode and the 4th electrode are configured in when overlooking across the intersection region and opposite position,
By it is described first sense magnetic area each vertex along be successively set as clockwise A1, A2, A3 and A4,
By it is described second sense magnetic area each vertex along be successively set as B1, B2, B3 and B4 clockwise when,
The first electrode is connected when overlooking with the A1 and the A2,
The second electrode is connected when overlooking with the B1 and the B2,
The third electrode is connected when overlooking with the A3 and the A4,
4th electrode is connected when overlooking with the B3 and the B4,
By link the line segment of the A1 and the A4 and link the B2 and B3 line segment intersection point be set as C1,
By the intersection point of the line segment for linking the A2 and the A3 and the line segment for linking the B2 and B3 be set as C2,
By the intersection point of the line segment for linking the A2 and the A3 and the line segment for linking the B1 and B4 be set as C3,
By the intersection point of the line segment for linking the A1 and the A4 and the line segment for linking the B1 and B4 be set as C4,
By the point on the line segment for linking the B2 and the C1 be set as D1,
By the point on the line segment for linking the A1 and the C1 be set as D2,
By the point on the line segment for linking the A2 and the C2 be set as D3,
By the point on the line segment for linking the B3 and the C2 be set as D4,
By the point on the line segment for linking the B4 and the C3 be set as D5,
By the point on the line segment for linking the A3 and the C3 be set as D6,
By the point on the line segment for linking the A4 and the C4 be set as D7,
When point on the line segment for linking the B1 and the C4 is set as D8,
The third sense magnetic area is the region that the connection C1, the D1 and the D2 are formed by triangle,
The 4th sense magnetic area is the region that the connection C2, the D3 and the D4 are formed by triangle,
The 5th sense magnetic area is the region that the connection C3, the D5 and the D6 are formed by triangle,
The 6th sense magnetic area is the region that the connection C4, the D7 and the D8 are formed by triangle,
The length for linking the line segment of the A1 and the A2 is being set as Win、
The length for linking the line segment of the B1 and the B2 is set as Wout、
The length for linking the line segment of the A1 and the A4 is set as Lin、
The length for linking the line segment of the B1 and the B4 is set as Lout、
When total area of the third sense magnetic area to the 6th sense magnetic area is set as S, meet following formula (4)~
(6) relationship,
X > 0, y > 0,0.7x+y≤0.7 ... (5),
Wherein,
0 < a≤0.1,0 <b≤0.54, x0=0.08, y0=0.62.
4. Hall element according to claim 3, which is characterized in that
The a and b meets the relationship of 0 < a≤0.09,0 <b≤0.45.
5. Hall element according to claim 3, which is characterized in that
The a and b meets the relationship of 0 < a≤0.064,0 <b≤0.32.
6. Hall element according to claim 3, which is characterized in that
The a and b meets the relationship of 0 < a≤0.04,0 <b≤0.19.
7. Hall element described according to claim 1~any one of 6, which is characterized in that
By the length for linking the line segment of the A1 and the D2 be set as ARM1,
By the length for linking the line segment of the A2 and the D3 be set as ARM2,
By the length for linking the line segment of the A3 and the D6 be set as ARM3,
By the length for linking the line segment of the A4 and the D7 be set as ARM4,
By the length for linking the line segment of the B1 and the D8 be set as ARM5,
By the length for linking the line segment of the B2 and the D1 be set as ARM6,
By the length for linking the line segment of the B3 and the D4 be set as ARM7,
When the length for linking the line segment of the B4 and the D5 is set as ARM8,
ARM1~ARM8 removes the value other than ARM1 to ARM8 all 0.
8. Hall element according to claim 7, which is characterized in that
The ARM1 to the ARM8 is not 0.
9. Hall element according to claim 7, which is characterized in that
The ARM1, the ARM2, the ARM3 and all 0.5% × L of the ARM4inMore than,
The ARM5, the ARM6, the ARM7 and all 0.5% × L of the ARM8outMore than.
10. Hall element described according to claim 1~any one of 6, which is characterized in that
The shape of the third sense magnetic area to the 6th sense magnetic area is the shape of mutual congruence when overlooking.
11. Hall element described according to claim 1~any one of 6, which is characterized in that
The third sense magnetic area and the 4th sense magnetic area are configured in when overlooking relative to the symmetrical position straight line M1,
Straight line M1 is that the midpoint for the line segment that will link the midpoint of the line segment of the A1 and the A2 and link the A3 and A4 connects
The straight line of knot,
The 5th sense magnetic area and the 6th sense magnetic area are configured in symmetrical relative to the straight line M1 when overlooking
Position.
12. Hall element according to claim 11, which is characterized in that
The magnet sensing part is relative to the symmetrical shape of straight line M1 when overlooking.
13. Hall element described according to claim 1~any one of 6, which is characterized in that
The third sense magnetic area and the 6th sense magnetic area are configured in when overlooking relative to the symmetrical position straight line M2,
Straight line M2 is that the midpoint for the line segment that will link the midpoint of the line segment of the B1 and the B2 and link the B3 and B4 connects
The straight line of knot,
The 4th sense magnetic area and the 5th sense magnetic area are configured in symmetrical relative to the straight line M2 when overlooking
Position.
14. Hall element according to claim 13, which is characterized in that
The magnet sensing part is relative to the symmetrical shape of straight line M2 when overlooking.
15. Hall element described according to claim 1~any one of 6, which is characterized in that
With described first when vertical view in substrate described in the resistivity ratio of the first sense magnetic area to the 6th sense magnetic area
The resistivity for feeling magnetic area to the adjacent region of the 6th sense magnetic area is low.
16. Hall element described according to claim 1~any one of 6, which is characterized in that
The first sense magnetic area to the 6th sense magnetic area carrier density than vertical view in the substrate when with it is described
The carrier density in the first sense magnetic area to the adjacent region of the 6th sense magnetic area is high.
17. Hall element described according to claim 1~any one of 6, which is characterized in that
The magnet sensing part is formed in the tabletop configuration formed on the substrate,
Along linking the line segment of the B2 and D1, the connection D1 and D2 when outer rim of the tabletop configuration is overlooked
Line segment, the line segment for linking the D2 and A1, the line segment for linking the A2 and D3, the line for linking the D3 and the D4
Section, the line segment for linking the D4 and B3, the line segment for linking the B4 and D5, the line for linking the D5 and the D6
Section, the line segment for linking the D6 and A3, the line segment for linking the A4 and D7, the line for linking the D7 and the D8
The line segment of section and the connection D8 and the B1.
18. Hall element described according to claim 1~any one of 6, which is characterized in that
First sense magnetic area to the 6th sense magnetic area is formed in the substrate.
19. Hall element described according to claim 1~any one of 6, which is characterized in that
Win/WoutFor 0.05 or more and 20 hereinafter,
Lin/LoutFor 0.05 or more and 20 hereinafter,
LinFor 1 μm or more and 300 μm hereinafter,
LoutIt is 1 μm or more and 300 μm or less.
20. Hall element described according to claim 1~any one of 6, which is characterized in that
The first sense magnetic area is the region being clipped in the middle by the first electrode and the third electrode, is without departing from described
The region of rectangular shaped when magnet sensing part, maximum area vertical view,
The second sense magnetic area is the region being clipped in the middle by the second electrode and the 4th electrode, is without departing from described
The region of rectangular shaped when magnet sensing part, maximum area vertical view,
The third sense magnetic area to the 6th sense magnetic area is the region of the maximum triangle without departing from magnet sensing part.
21. a kind of Hall element has substrate, the first electrode being formed on the substrate and the first electrode opposite to each other
The third electrode of formation, second electrode, the 4th electrode formed opposite to each other with the second electrode and respectively with described first
The magnet sensing part that electrode is connected to the 4th electrode, the Hall element be characterized in that,
The magnet sensing part has:
First sense magnetic area, is the region being clipped in the middle by the first electrode and the third electrode, is without departing from described
The region of rectangular shaped when magnet sensing part, maximum area vertical view；
Second sense magnetic area, is the region being clipped in the middle by the second electrode and the 4th electrode, is without departing from described
Rectangular shaped and the region vertically intersected with the first sense magnetic area when magnet sensing part, maximum area vertical view；And
Third sense magnetic area, the 4th sense magnetic area, the 5th sense magnetic area and 6th sense magnetic area, are formed in the zone of intersection when overlooking
Near domain, the intersection region be when overlooking described in the first sense magnetic area and described second feel the region that intersects of magnetic area,
On the top that the vertex of the first electrode side in each vertex of the first sense magnetic area is set as to A1, A2, third electrode side
Point be set as A3, A4,
The vertex of second electrode side in each vertex of the second sense magnetic area is set as to the vertex of B1, B2, the 4th electrode side
Be set as B3, B4,
By the intersection point of the line segment for linking the A1 and the A4 and the line segment for linking the B2 and B3 be set as C1,
By the intersection point of the line segment for linking the A2 and the A3 and the line segment for linking the B2 and B3 be set as C2,
By the intersection point of the line segment for linking the A2 and the A3 and the line segment for linking the B1 and B4 be set as C3,
By the intersection point of the line segment for linking the A1 and the A4 and the line segment for linking the B1 and B4 be set as C4,
By the point on the line segment for linking the B2 and the C1 be set as D1,
By the point on the line segment for linking the A1 and the C1 be set as D2,
By the point on the line segment for linking the A2 and the C2 be set as D3,
By the point on the line segment for linking the B3 and the C2 be set as D4,
By the point on the line segment for linking the B4 and the C3 be set as D5,
By the point on the line segment for linking the A3 and the C3 be set as D6,
By the point on the line segment for linking the A4 and the C4 be set as D7,
When point on the line segment for linking the B1 and the C4 is set as D8,
The third sense magnetic area is the region that the connection C1, the D1 and the D2 are formed by triangle,
The 4th sense magnetic area is the region that the connection C2, the D3 and the D4 are formed by triangle,
The 5th sense magnetic area is the region that the connection C3, the D5 and the D6 are formed by triangle,
The 6th sense magnetic area is the region that the connection C4, the D7 and the D8 are formed by triangle,
The length for linking the line segment of the A1 and the A2 is being set as Win、
The length for linking the line segment of the B1 and the B2 is set as Wout、
The length for linking the line segment of the A1 and the A4 is set as Lin、
The length for linking the line segment of the B1 and the B4 is set as Lout、
When total area of the third sense magnetic area to the 6th sense magnetic area is set as S, meet following formula (7)~
(9) relationship,
X > 0, y > 0,0.7x+y≤0.7,0 a≤0.1 <, 0 b≤0.54 <, x0=0.08, y0=0.62 ... (8),
Wherein,
22. Hall element according to claim 21, which is characterized in that
The third sense magnetic area to the 6th sense magnetic area is the region of the maximum triangle without departing from magnet sensing part.
23. the Hall element according to claim 21 or 22, which is characterized in that
The shape of the third sense magnetic area to the 6th sense magnetic area is the shape of mutual congruence when overlooking.
24. the Hall element according to claim 21 or 22, which is characterized in that
By the length for linking the line segment of the A1 and the D2 be set as ARM1,
By the length for linking the line segment of the A2 and the D3 be set as ARM2,
By the length for linking the line segment of the A3 and the D6 be set as ARM3,
By the length for linking the line segment of the A4 and the D7 be set as ARM4,
By the length for linking the line segment of the B1 and the D8 be set as ARM5,
By the length for linking the line segment of the B2 and the D1 be set as ARM6,
By the length for linking the line segment of the B3 and the D4 be set as ARM7,
When the length for linking the line segment of the B4 and the D5 is set as ARM8,
ARM1~ARM8 removes the value other than ARM1 to ARM8 all 0.
25. Hall element according to claim 24, which is characterized in that
The ARM1 to the ARM8 is not 0.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-214451 | 2014-10-21 | ||
| JP2014214451 | 2014-10-21 | ||
| JP2014252856 | 2014-12-15 | ||
| JP2014-252856 | 2014-12-15 | ||
| PCT/JP2015/005240 WO2016063510A1 (en) | 2014-10-21 | 2015-10-16 | Hall element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107078209A CN107078209A (en) | 2017-08-18 |
| CN107078209B true CN107078209B (en) | 2019-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201580057173.XA Active CN107078209B (en) | 2014-10-21 | 2015-10-16 | Hall element |
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| JP (1) | JP6263804B2 (en) |
| CN (1) | CN107078209B (en) |
| WO (1) | WO2016063510A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6639290B1 (en) * | 1999-02-26 | 2003-10-28 | Fraunhofer-Gesellschaft Zur Foerderung, Der Angewandten Forschung E.V. | Hall sensor with a reduced offset signal |
| CN1529916A (en) * | 2001-07-26 | 2004-09-15 | ɵ��Ӳ���Ԫ����ʽ���� | Semiconductor hall sensor |
| CN1561550A (en) * | 2001-10-01 | 2005-01-05 | 旭化成微系统株式会社 | Hall device and magnetic sensor |
| CN102656471A (en) * | 2009-08-26 | 2012-09-05 | 松下电器产业株式会社 | Magnetic field sensor, as well as magnetic field measurement method, power measurement device, and power measurement method using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5310861Y2 (en) * | 1973-09-27 | 1978-03-23 | ||
| JPH0675185B2 (en) * | 1988-05-26 | 1994-09-21 | 株式会社村田製作所 | Photomask for GaAs Hall element |
| JPH05335649A (en) * | 1992-06-03 | 1993-12-17 | Res Dev Corp Of Japan | Hall element |
| JPH06164015A (en) * | 1992-11-27 | 1994-06-10 | Nippondenso Co Ltd | Magnetic sensor |
| JP2015015390A (en) * | 2013-07-05 | 2015-01-22 | 木村 光照 | Offset voltage correction method of hall device and hall sensor employing the same |
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2015
- 2015-10-16 CN CN201580057173.XA patent/CN107078209B/en active Active
- 2015-10-16 JP JP2016555080A patent/JP6263804B2/en active Active
- 2015-10-16 WO PCT/JP2015/005240 patent/WO2016063510A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6639290B1 (en) * | 1999-02-26 | 2003-10-28 | Fraunhofer-Gesellschaft Zur Foerderung, Der Angewandten Forschung E.V. | Hall sensor with a reduced offset signal |
| CN1529916A (en) * | 2001-07-26 | 2004-09-15 | ɵ��Ӳ���Ԫ����ʽ���� | Semiconductor hall sensor |
| CN1561550A (en) * | 2001-10-01 | 2005-01-05 | 旭化成微系统株式会社 | Hall device and magnetic sensor |
| CN102656471A (en) * | 2009-08-26 | 2012-09-05 | 松下电器产业株式会社 | Magnetic field sensor, as well as magnetic field measurement method, power measurement device, and power measurement method using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2016063510A1 (en) | 2017-04-27 |
| JP6263804B2 (en) | 2018-01-24 |
| WO2016063510A1 (en) | 2016-04-28 |
| CN107078209A (en) | 2017-08-18 |
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