CN107078182A - The manufacture method of light-receiving device, portable electric appts and light-receiving device - Google Patents
The manufacture method of light-receiving device, portable electric appts and light-receiving device Download PDFInfo
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- CN107078182A CN107078182A CN201580057073.7A CN201580057073A CN107078182A CN 107078182 A CN107078182 A CN 107078182A CN 201580057073 A CN201580057073 A CN 201580057073A CN 107078182 A CN107078182 A CN 107078182A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
- G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
- G01J1/1626—Arrangements with two photodetectors, the signals of which are compared
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
- G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
- G01J1/1626—Arrangements with two photodetectors, the signals of which are compared
- G01J2001/1657—Arrangements with two photodetectors, the signals of which are compared one signal being spectrally modified, e.g. for UV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention provides the manufacture method of light-receiving device, portable electric appts and the light-receiving device of the reduction for the sensitivity inequality that ultraviolet region can be achieved and the noise reduction of visible region and infrared light region.The first photo detector (PD1) and the second photo detector (PD2) of light-receiving device (1) in the P type substrate of the first conductivity type (P_sub) respectively by forming the N-type potential well layer (N_well) of the second conductivity type, the p-type potential well layer (P_well) of the first conductivity type is formed in N-type potential well layer (N_well), the n type diffused layer (N) of the second conductivity type is formed in p-type potential well layer (P_well) and is formed.P type substrate P_sub, N-type potential well layer (N_well) and p-type potential well layer (P_well) are being electrically same potential or are being short-circuited.
Description
Technical field
The present invention relates to the manufacture method of light-receiving device, portable electric appts and light-receiving device, more specifically, it is related to conduct
Light-receiving device and use the portable electric appts of the light-receiving device and the manufacture method of light-receiving device that ultraviolet light transducer is used.
Background technology
In recent years, the chemical substance comprising fluorocarbon and chlorine used in freezer and cooling device etc. is discharged into
The destruction of ozone layer caused by air aggravates, and the ultraviolet light quantity for being irradiated to ground is continuously increased.Ultraviolet light wave length,
Therefore luminous energy is high, and skin etc. is damaged.
Ultraviolet light is divided into UVA (315~400nm), UVB (280~315nm) and UVC (100~280nm) according to wavelength.
Ultraviolet light medium wavelength most short UVC is significantly absorbed by various materials, hardly reaches ground.But, the short UVB of wavelength second
Act on the epidermis of mankind's skin, promote the generation of melanin carried out by chromatophore, thus as it is tanned the reason for, journey
Chromatophore is likely to occur canceration when spending serious.In addition, the melanin oxygen that wavelength most long UVA will be generated by above-mentioned UVB
Change, make its overstrike.
Like this, ultraviolet light is big to the health of the mankind and the influence of environment, moreover, as mentioned above due to ozone layer it is broken
Bad, the ultraviolet light quantity on irradiation ground is continuously increased, therefore for utilizing smart mobile phone or ordinary surveying meter etc. in daily life
To detect that the expectation of ultraviolet light quantity is gradually surging.Which kind of no matter in the case where being detected with mode, it is required for using to purple
The high photo-electric conversion element of outer luminous sensitivity.
The existing light-receiving device i.e. basic structure of optical sensor for illustrating to detect above-mentioned ultraviolet light quantity based on Figure 12.
As shown in figure 12, optical sensor 100 be formed with for example each other the first photo detector of structure identical 110 and second by
Optical element 120, is only formed with the first photo detector 110 by the optical filter 140 of the light cut-off of the wavelength of ultraviolet region.It is more detailed
For thin, as the first photo detector 110 and the second photo detector 120, knot is sequentially formed with P-type semiconductor substrate 101
Depth deep n type diffused layer 111,121 and the shallow p type diffused layer 112,122 of the above-mentioned n type diffused layer 111,121 of junction depth ratio.This
Outside, dielectric film 132 and first layer wiring layer 137 thereon, are being sequentially formed, is similarly sequentially forming dielectric film 133, the second layer and match somebody with somebody
Line layer 138, dielectric film 134, third layer wiring layer 139 and dielectric film 135.Further, it is formed with the first photo detector 110
The optical filter 140 that the light of ultraviolet region of the specific light such as 300~400nm is ended.
In the case of the diffusion structure of above-mentioned optical sensor 100, using by P-type semiconductor substrate 101 and n type diffused layer
111st, the photodiode that 121 PN junctions constituted are constituted, and between n type diffused layer 111,121 and diffusion layer 112,122
The photodiode that the PN junction of composition is constituted this 2 photodiodes absorb light.Therefore, the second photo detector sensitivity is such as
Shown in Figure 13 (b), the photocarrier caused by the light in the deep region for reaching the P-type semiconductor substrate 101 being made up of silicon substrate
Opto-electronic conversion can be carried out, therefore the sensitivity of long wavelength region (550~1150nm) is high.
On the other hand, it is formed with the optical filter 140 for ending specific light and (for example ends the optical filtering of 300~400nm light
Piece) the first photo detector 110 there is the first photo detector sensitivity as shown in Figure 13 (a) spectral sensitivity.
Obtain the difference exported with the output of the first photo detector 110 of the second photo detector 120 shown in Figure 13 (b)
Value, shown in such as Figure 13 (c), obtains the output of ultraviolet luminous sensitivity.
Prior art literature
Patent document
Patent document 1：Japanese Laid-Open Patent Publication " JP 2013-197243 publications (disclosure on the 30th of September in 2013) "
Patent document 2：Japanese Laid-Open Patent Publication " Unexamined Patent 10-84102 publications (on March 31st, 1998 is open) "
The content of the invention
The invention technical problem to be solved
But, there is problems with above-mentioned existing light-receiving device.
First, in the optical sensor 100 shown in Figure 12, the structure for making photodiode is dual diffusion structure, is passed through
It is mounted with output and the second light of unloaded UV edge filters 140 of the first photo detector 110 of UV edge filters 140
The mode of the difference of the output of element 120 is calculated.
In this case, as shown in Figure 13 (a), (b), (c), the visible region of photodiode and infrared light region
Sensitivity it is high, because of its influence, it is seen that the noise of light region and infrared light region is big.
Here, the first photo detector 110 and the second photo detector 120 is respective is used as visible region and infrared light region
400~1150nm sensitivity only by calculating in subtraction offset.Therefore, 400 shown in Figure 13 (a), (b)~
1150nm respective sensitivity is it can be seen that be original unwanted spectral sensitivity.
The reason for noise of the visible region and infrared light region becomes big can consider to be due to following phenomenon.
In the first photo detector 110 for being formed with the i.e. UV edge filters 140 of the inteferometer coating for ending specific light,
Interference film optical filters are formed with oxide-film, therefore the reflection/transmission characteristic of each wavelength without formation with interfering film optical filters
Second photo detector 120 is different.As a result, as Figure 13 (a), (b) shown in, the first photo detector sensitivity and second by
In optical element sensitivity, the jagged spectral sensitivity produced in 500~1000nm regions corresponds to the reflection, but is not phase
Same waveform.
Like this, when calculating this 2 photo detector sensitivity, anyway all as shown in Figure 12 (c)
Photo detector sensitivity after calculating is such, in the remaining jagged noise in 500~1000nm region.The noise is with being used as master
300~400nm of signal signal overlap, therefore can not correctly be calculated.
Particularly, in the structure of the light accepting part of the optical sensor 100 shown in Figure 12, using by P-type semiconductor substrate 101
The photodiode that is constituted of PN junction that is constituted with n type diffused layer 111 and n type diffused layer 111 and p type diffused layer 112 it
Between the PN junction that constitutes this 2 photodiodes of photodiode for being constituted absorb light.Therefore, as shown in Figure 13 (b)
As second photo detector sensitivity is shown, the photocarrier caused by the light in the deep region for reaching silicon substrate can enter
Row opto-electronic conversion, therefore the sensitivity of long wavelength region (550~1150nm) is high.As a result, 500~1000nm noise becomes
Greatly.
That is, be formed with the photo detector sensitivity of UV edge filters and do not formed UV edge filters by
Optical element sensitivity, sensitivity vibration has differences, it is seen that light region includes the error that can not ignore.Accordingly, there exist utilize hair
The subtraction of the output of the photodiode of raw vibration come detect ultraviolet ray intensity and the problem of cause as error big sensitivity.
In order to solve the problem, it is known that the optical sensor for example disclosed in patent document 1.
Optical sensor disclosed in above-mentioned patent document 1 is for example using the first high photodiode of UV sensitivity, UV spirits
The second low photodiode of sensitivity, UV edge filters are loaded into above-mentioned first photodiode obtained from the 3rd photoelectricity
Diode and the 4th photodiode obtained from UV edge filters are loaded into above-mentioned second photodiode.Moreover, bag
Include calculating (the first photodiode exports the output of the-the three photodiode)-(the second photodiode the-the four photoelectricity of output
The output of diode) output circuit.
But, in the structure of the optical sensor disclosed in patent document 1, it may have following problem：Light beyond UV light
During transmission, on UV edge filters surface and UV edge filters bottom, reflectivity is interfered, therefore is existed beyond UV light
Light transmission when, due to the influence of sensitivity offset, it is impossible to accurately detect specific luminous sensitivity.
The present invention be in view of it is above-mentioned existing the problem of and complete, its object is to there is provided can realize ultraviolet region
The light-receiving device of the uneven reduction of sensitivity and the noise reduction of visible region and infrared light region, portable electric appts and
The manufacture method of light-receiving device.
The technical scheme solved the problems, such as
In order to solve the above problems, the light-receiving device of a mode of the invention includes：First photo detector；With above-mentioned first
Photo detector structure the second photo detector of identical；Cut with the wavelength by ultraviolet region formed on above-mentioned first photo detector
Optical filter only, by carrying out computing to the output from above-mentioned first photo detector and the second photo detector, is only exported above-mentioned
The output of the wavelength of ultraviolet region, the light-receiving device is characterised by：Above-mentioned first photo detector and the second photo detector lead to respectively
The first diffusion layer that the second conductivity type is formed in the Semiconductor substrate of the first conductivity type is crossed, is formed in above-mentioned first diffusion layer
Second diffusion layer of the first conductivity type, forms the 3rd diffusion layer of the second conductivity type and is formed in above-mentioned second diffusion layer, and
And, above-mentioned Semiconductor substrate, above-mentioned first diffusion layer and the second diffusion layer are being electrically same potential or are being short-circuited.
In order to solve the above problems, the portable electric appts of a mode of the invention are characterised by, including the above
Described light-receiving device.
In order to solve the above problems, the manufacture method of the light-receiving device of a mode of the invention is above-described light-receiving device
Manufacture method, it is characterised in that including：When forming the optical filter by the wavelength cut-off of ultraviolet region, it will peel off with against corrosion
Agent is patterned in the process on the second photo detector；From upside to above-mentioned first photo detector and patterning after above-mentioned second by
The process of stripping resist formation inteferometer coating on optical element；With by peeling off, there will be the first photo detector of inteferometer coating
The process formed simultaneously in mode adjacent to each other with the second photo detector in the absence of inteferometer coating.
Invention effect
According to the mode of the present invention, using the teaching of the invention it is possible to provide the uneven reduction of sensitivity of ultraviolet region can be achieved and visible
The such effect of the light-receiving device of the noise reduction of light region and infrared light region, the manufacture method of portable electric appts and light-receiving device
Really.
Brief description of the drawings
Fig. 1 is the sectional view of the structure for the light accepting part for representing the light-receiving device in embodiments of the present invention 1.
Fig. 2 is the block diagram for the structure for representing above-mentioned light-receiving device.
Fig. 3 is the top view of the structure for the light accepting part for representing above-mentioned light-receiving device.
Fig. 4 be represent the visible region of the inteferometer coating in the glass substrate in above-mentioned light accepting part, infrared light region it is saturating
Penetrate the curve map of rate measurement result.
(a) in Fig. 5 is the figure for representing to have used the manufacture method of the UV edge filters of stripping (lift off) technology,
It is the sectional view for representing Resist patterning process on photodiode, (b) is to represent that inteferometer coating is laminated the section view of sputtering process
Figure, (c) is the sectional view for representing resist stripping process.
Fig. 6 is the curve map of the spectral transmission characteristic for the UV edge filters for representing above-mentioned light accepting part.
(a) in Fig. 7 is the curve map for the first photo detector sensitivity for representing above-mentioned light accepting part, and (b) is to represent above-mentioned
The curve map of second photo detector sensitivity of light accepting part, (c) is ultraviolet luminous sensitivity (the second light for representing above-mentioned light accepting part
The sensitivity of the photo detector of element sensitivity-the first) curve map.
Fig. 8 is the sectional view of the structure for the light accepting part for representing the light-receiving device in embodiments of the present invention 2.
Fig. 9 is the curve map of the silicon oxide layer thickness dependence of the reflectivity in the ultraviolet region for represent above-mentioned light accepting part.
Figure 10 is the curve map of the silicon nitride film thickness dependence of the reflectivity in the ultraviolet region for represent above-mentioned light accepting part.
Figure 11 is the refractive index (n) for the silicon nitride film for representing above-mentioned light accepting part and the wavelength dependency of extinction coefficient (k)
Curve map.
Figure 12 is the sectional view for the structure for representing existing light accepting part.
(a) in Figure 13 is the curve map for the first photo detector sensitivity for representing above-mentioned existing light accepting part, and (b) is to represent
The curve map of second photo detector sensitivity of above-mentioned existing light accepting part, (c) is the ultraviolet light spirit for representing above-mentioned existing light accepting part
The curve map of sensitivity (second the-the first photo detector of photo detector sensitivity sensitivity).
Embodiment
[embodiment 1]
An embodiment of the invention is described as follows based on Fig. 1~Fig. 7.
Light-receiving device 1 based on Fig. 1~3 pair present embodiment is illustrated.Fig. 1 is the light-receiving device 1 for representing present embodiment
In light accepting part 10A structure sectional view.Fig. 2 is the block diagram of the structure for the light-receiving device 1 for representing present embodiment.Fig. 3 is table
Show the top view of the structure of light accepting part 10A in above-mentioned light-receiving device 1.
The light-receiving device 1 of present embodiment is as shown in Fig. 2 be to include light accepting part 10A and sensor circuit portion 20 light sensing
Device, wherein, light accepting part 10A flows photoelectric current by incident light, and the sensor circuit portion 20 is based on photoelectric current come detection light
Intensity.Light-receiving device 1 can be loaded into the portable electric appts as the smart mobile phone of photoelectric conversion device etc..Hereinafter,
Each component parts is illustrated.
<Light accepting part>
Light accepting part 10A that light-receiving device 1 in present embodiment possesses is as shown in figure 3, phase each other during by being included in vertical view
The the first photo detector PD1 and the second photo detector PD2 photo-electric conversion element configured adjacently is constituted.As shown in Fig. 2 first by
Optical element PD1 flows photoelectric current Iin1 according to the intensity of incident light, and the second photo detector PD2 is according to the intensity of incident light
And flow photoelectric current Iin2.
Based on the sectional view of the light accepting part 10A shown in Fig. 1, above-mentioned light accepting part 10A concrete structure is illustrated.
Light accepting part 10A as shown in figure 1, including the first photo detector PD1, the second photo detector PD2 and be arranged on first by
The UV edge filters 11 (ultraviolet light edge filter) on optical element PD1 top.Thus, after through UV edge filters 11
Light is injected into the first photo detector PD1.
First photo detector PD1 and the second photo detector PD2 have identical cross-section structure.Specifically, include respectively：
Form the N-type potential well layer N_well in P type substrate P_sub inside；Form the p-type potential well layer on N-type potential well layer N_well
P_well；With n type diffused layer N of the formation on p-type potential well layer P_well.
P type substrate P_sub, N-type potential well layer N_well and p-type potential well layer P_well ground connection (GND).
That is, the first photo detector PD1 and the second photo detector PD2 are in the P type substrate P_ as Semiconductor substrate
Sub inside is made up of the diffusion layer of at least 3 weights respectively, as following photo-electric conversion element, i.e. be used as the first conductivity type
The N-type potential well layer N_well as the first diffusion layer of the second conductivity type is formed on the P type substrate P_sub of substrate, above-mentioned
The p-type potential well layer P_well of the second diffusion layer as the first conductivity type is formed in one diffusion layer, in above-mentioned second diffusion layer
Generate the n type diffused layer N of the 3rd diffusion layer as the second conductivity type, Semiconductor substrate, the first diffusion layer and the second diffusion layer
It is being electrically same potential or is being short-circuited.
N type diffused layer N is connected with the lead-out terminal OUT with the current potential higher than ground.
First photo detector PD1 has 3 PN junctions.Specifically, including：By P type substrate P_sub and N-type potential well layer N_
The photodiode PD1_ir that well PN junction is constituted；It is made up of N-type potential well layer N_well and p-type potential well layer P_well PN junction
Photodiode PD1_vis；With the photodiode PD1_ being made up of p-type potential well layer P_well and n type diffused layer N PN junction
uv。
In addition, the second photo detector PD2 has 3 PN junctions, including：By P type substrate P_sub and N-type potential well layer N_well
PN junction constitute photodiode PD2_ir；The light being made up of N-type potential well layer N_well and p-type potential well layer P_well PN junction
Electric diode PD2_vis；With the photodiode PD2_uv being made up of p-type potential well layer P_well and n type diffused layer N PN junction.
That is, the first photo detector PD1 and the second photo detector PD2 is excellent using junction depth identical ultraviolet sensitivity
Different photodiode.
In aforementioned p-type substrate P_sub upper surface, photomask 16a, 16b, 16c are formed with as described later, at them
Interlayer be formed with dielectric film 13a, 13b, 13c, 13d, and the upper surface of the dielectric film 13d in the top is provided with diaphragm
12.The diaphragm 12 is semiconductor circuit for protecting chip to possess etc. not by from outside chemical, physics and optics
Influence film.
Specifically, generally on the surface of semiconductor devices, for example, by with monosilane gas (SiH4Gas), ammonia
(NH3Gas) etc. as unstrpped gas plasma CVD (Chemical Vapor Deposition：Chemical vapor deposition)
Method deposits silicon nitride film, is used as final diaphragm (passivating film).The silicon nitride film used as the passivating film, in semiconductor devices
Multi-layer wiring structure in, generally overlapping be deposited on the silicon oxide layer deposited on the distribution for be formed at the superiors by CVD
On.
The excellent adhesion of silicon nitride film and the silicon oxide layer as underlying insulation film, and film composition is fine and close, therefore into
To play the film as the effect for preventing diaphragm 12 that moisture immerses to semiconductor circuit.
Here, in the present embodiment, it is not have shape in the first photo detector PD1 and the second photo detector PD2 upside
Into photomask 16a, 16b, 16c state, and when forming photomask 16a, 16b, 16c, in the first photo detector PD1 and the
Region beyond two photo detector PD2 smooth surface forms what is be made up of with photomask 16a, 16b, 16c identical material simultaneously
It is multilayer wired.Thus, using photomask 16a, 16b, 16c and it is multilayer wired can to beyond smooth surface region carry out shading,
And make to inject n type diffused layer N from outside light.
On the other hand, in order that smooth surface opening, it is also preferred that removing diaphragm 12 in advance.Thus, on photodiode
Inorganic material film turns into single silicon oxide layer, reflects effective to the light suppressed on photodiode.Specifically, silicon oxide layer
Refractive index be 1.44~1.46, be 2.03~2.10 as the refractive index of the silicon nitride film of diaphragm 12.Therefore, when in photoelectricity
When refractive index different film is folded on diode upper strata, it is possible to produce light reflects.Further, since the membrane thickness unevenness of diaphragm 12,
Light reflectivity is uneven, and it is therefore possible to the uneven main cause as photodiode sensitivity.
Then, in the present embodiment, it is formed with the first photo detector PD1 upper surface and cuts the wavelength of ultraviolet region
UV edge filters 11 only.UV edge filters 11 are the saturating of the light for the wavelength region (below wavelength 400nm) for making ultraviolet light
Penetrate the optical filter of transmissivity of the rate less than the light outside the wavelength region of the ultraviolet light.UV edge filters 11 preferably interdict
The optical filter of the light of the wavelength region of ultraviolet light.
<Sensor circuit portion>
In the light accepting part 10A that the light-receiving device 1 of present embodiment possesses, as shown in Fig. 2 sensor circuit portion 20 includes
A/D converter ADC1, A/D converter ADC2 and subtracter 21 (calculating part).
A/D converter ADC1 is connected with the first photo detector PD1, and photoelectric current Iin1 is converted into data signal and number is exported
Word output valve ADCOUNT1.Digital output value ADCOUNT1 is corresponding with the intensity of incident first photo detector PD1 light.
A/D converter ADC2 is connected with the second photo detector PD2, and photoelectric current Iin2 is converted into data signal and number is exported
Word output valve ADCOUNT2.Digital output value ADCOUNT2 is corresponding with the intensity of incident second photo detector PD2 light.
Subtracter 21 calculates digital output value ADCOUNT2 and digital output value ADCOUNT1 difference (ADCOUNT2-
ADCOUNT1) and output it.Above-mentioned difference be subtracted from the intensity of incident second photo detector PD2 light incidence first by
It is worth obtained from the intensity of optical element PD1 light.
<The manufacture method of light accepting part>
Then, the manufacture method to the light accepting part 10A in the light-receiving device 1 of said structure is illustrated.
As shown in figure 1, first, in concentration ratio relatively low (such as 1 × 1015cm-3Left and right) the p-type being made up of silicon (Si) serve as a contrast
The bottom P_sub whole face in upper surface is formed with the big resist of 5 μm or so thickness, thickness.Then, using photoetching technique
Deng by the resist removal on the region for forming the first photo detector PD1 and the second photo detector PD2.Then, with above-mentioned against corrosion
Agent is mask, with acceleration energy 3MeV, injection rate 1 × 1013cm-2Condition, the phosphonium ion ion implanting of N-type impurity will be used as
Into P type substrate P_sub.Now, the depth of phosphorus impurities to about 2.5 μm is imported from P type substrate P_sub surface.
Here, the resist of about 5 times of thickness with the usually used resist with 1 μm of left and right thickness is formd,
This is to prevent that, due to the very high condition of the Implantation Energy using phosphonium ion, phosphonium ion reaches P type substrate by resist
P_sub, phosphonium ion is injected into the region being not injected into beyond injection zone.
Afterwards, resist is removed using oxygen plasma.Then, carry out after washing procedure, with 1100 DEG C of progress left side on the half
The high temperature long term annealing processing of right (about 12 hours).Thus, the N-type potential well layer with about 7 μm~about 10 μm of depth is formed
N_well。
Then, p-type potential well layer is formed in the region (N-type potential well layer N_well) for forming the first photodiode PD1_vis
P_well.Now while also forming p-type gesture in the region (N-type potential well layer N_well) for forming the second photodiode PD2_vis
Well layer P_well.
In addition, being formed for by between photodiode, inside signal processing circuit and photodiode and signal transacting
Electric insulation is waited between circuit and enters the selective oxidation film STI that units are separated, this omission is illustrated.Then, composition crystalline substance is being formed
After the gate insulating film of body pipe, formed and used the gate electrode of polysilicon, be further formed into transistor source electrode and
The diffusion layer of drain electrode.
In the formation source electrode and the process of drain electrode, the P of high concentration is formed+Type layer, N+Type layer.Then, in P type substrate P_
Sub is upper using peak concentration as 1 × 1019cm-3Following defined condition formation N-type potential well layer N_well, being formed has identical knot
The the first photo detector PD1 and the second photo detector PD2 of structure.
In addition, N-type potential well layer N_well and p-type potential well layer P_well impurity concentration and depth are to the photoelectricity that ultimately forms
The sensitivity spectrum of diode makes a big impact, and is carried out in the way of obtaining target capabilities (such as sensitivity spectrum) optimal
Change.
Then, dielectric film 13a is formed being formed with the P type substrate P_sub of element upper surface by oxide-film.Then, exist
Dielectric film 13a predetermined region formation contact hole.
Then, formed after metal level, schemed using photoetching technique and etching technique etc. in dielectric film 13a upper surface
Case, thus forms cathode electrode 14a, 14b and anode electrode 15a, 15b respectively.By the way that same processes are repeated, in shading
Film 16a, 16b, 16c and their interlayer formation dielectric film 13b, 13c, 13d, to being carried out beyond the light area of photodiode
Shading.
In addition, in the manufacture method of present embodiment, also existing comprising P type substrate P_sub and N-type potential well layer N_well etc.
It is interior, form cathode electrode 14a, 14b and anode electrode 15a, 15b independently on surface.Now, by by photomask 16a,
16b, 16c are used as multilayer wired, make P type substrate P_sub, N-type potential well layer N_well, p-type potential well layer P_well short
Lu Erwei GND current potentials.But, not limited to this, can also be configured to separately change current potential.
Formed and photomask 16a, 16b, 16c simultaneously in the top of the signal processing circuit comprising above-mentioned counting circuit portion etc.
By phase same material constitute it is multilayer wired, and beyond the first photo detector PD1 and the second photo detector PD2 smooth surface
Region also simultaneously formed with photomask 16a, 16b, 16c by phase same material constitute it is multilayer wired.
Then, formed in dielectric film 13d upper surface by silicon nitride film after diaphragm 12, preferred to formation opening
The diaphragm 12 on the first photo detector PD1 and the second photo detector PD2 is removed in advance.Thus, the nothing on photodiode
Machine material membrane turns into single oxide-film, to suppressing the inequality of the light reflection on photodiode effectively.
Finally, being formed in the first photo detector PD1 upper surface by the stacking of high refractive index film and low refractive index film will
The UV edge filters 11 of the wavelength cut-off of ultraviolet region, and removed from the second photo detector PD2 upper surface by ultra-violet (UV) band
The UV edge filters 11 of the wavelength cut-off in domain.
Here, (a), (b), (c) based on Fig. 4 and Fig. 5 illustrates the UV edge filters of the wavelength cut-off of ultraviolet region
11 manufacture method.Fig. 4 is visible region and the infrared light region of the inteferometer coating in the glass substrate for represent light accepting part 10A
The curve map of transmissivity measurement result.Fig. 5 (a) is the UV edge filters 11 for representing to have used stripping (lift off) technology
Manufacture method figure, be the sectional view for representing the Resist patterning process on photodiode.Fig. 5 (b) is to represent dry
Relate to the sectional view that film layer folds sputtering process.Fig. 5 (c) is the sectional view for representing resist stripping process.In addition, in this embodiment party
In formula, as resist is peeled off, the positive light anti-etching agent of phenolic resin class is used.
First, in the manufacture method of the light-receiving device 1 of present embodiment, UV edge filters 11 are being selectively forming
In the case of, use lift-off technology.
First, on lift-off technology, outline is simplyd illustrate.Generally, it can lead to after the film made using evaporation or sputtering
Overetch is patterned.But, if using mask evaporation, peeling off such method, etch process can be cancelled and straight
Connect to form pattern.Mask evaporation is deposited by the metallic plate with perforate as hollowed-out mask, thus straight on substrate
Connect pattern-making.In the case of MEMS, when wanting to be formed electrode in last process, if the surface of substrate is by three-dimensionally
Processing, then be difficult to photoetching.In this case, if it is possible to form electrode pattern using hollowed-out mask, then very just
Profit.
On the other hand, stripping is, by the evaporation metal on the pattern made by resist, when the resist is removed, only to exist
It is left method as the pattern of metal in the part for not having resist.But, when the side wall of resist is all covered by metal film
When, anticorrosive additive stripping liquid controlling can not be impregnated with, therefore resist becomes unable to be removed.In order to prevent the generation of such case, carry out
The projection of eaves shape is formed on the top of resist, or resist is fabricated to the design of inverted cone-shaped etc..
In addition, using stripping with resist to the situation that is patterned the optical filter of the wavelength cut-off of ultraviolet region
Under, inteferometer coating is formed on the Resist patterns by sputtering method, by peeling off the photodiode with inteferometer coating and not
Photodiode with inteferometer coating is adjacent to be formed simultaneously.
But, in the case, as shown in figure 4, the visible region of inteferometer coating on a glass substrate, infrared light region
Transmissivity measurement result in, there is problems with, i.e. easily occur caused by the fluctuation of sputter temperature visible region,
The transmissivity in the transmission domain in infrared light region is uneven.
Its reason may be considered, due to high temperature, because of the degassing from resist, and contained degassing composition contains in film
Amount change, refractive index changes, and the thus reflection of film changes.
Therefore, in the present embodiment, by following method, the UV edge filters carried out using lift-off technology are realized
11 film forming.
As shown in Fig. 5 (a), first the first photo detector PD1 and with the first photo detector PD1 structures identical the
Whole face applies the resist of stripping on two photo detector PD2, uses the photoetching technique progress resist figure for carrying out exposure, development
Case.
Then, as shown in Fig. 5 (b), inteferometer coating is integrally sputtered.Thus, directly formed on the first photo detector PD1
As by the UV edge filters 11 of the inteferometer coating of the wavelength cut-off of ultraviolet region, across stripping on the second photo detector PD2
Resist is formed the inteferometer coating of the wavelength cut-off of ultraviolet region.Then, as shown in Fig. 5 (c), by carrying out resist stripping
From the inteferometer coating on the second photo detector PD2 formed on resist is removed by stripping, only in the first photo detector
The upper remaining inteferometer coating as UV edge filters 11.
Thereby, it is possible to use the substrate for including the silicon as general semi-conducting material, it can be provided with low cost ultraviolet
There is the light accepting part 10A of the small sensitivity of error in region, particularly 300nm~400nm wavelength region.
Here, in the manufacture of above-mentioned UV edge filters 11, in the present embodiment, as inteferometer coating, height is used
The stacked film of refraction materials and oxide-film.As high-index material, such as using by niobium pentoxide (Nb2O5) or titanium dioxide
Titanium (TiO2) constitute metal film, as low-index material, use silica (SiO2) etc. oxide-film.Specifically, lead to
Crossing sputtering method will such as niobium pentoxide (Nb2O5) etc. metal film and the stacked film of oxide-film be alternately laminated about 20 layers or so.
Chip temperature now is preferably less than 95 DEG C.Its reason is, from resist if chip temperature rises
The generation quantitative change of degassing is more, and the optical characteristics in UV abatements region produces inequality.
Then, in order to by chip temperature control to less than 95 DEG C, it is necessary to suitably setting sputter process when RF power.
By above-mentioned lift-off technology, can there will be the first photo detector PD1 of UV edge filters 11 and in the absence of UV
Second photo detector PD2 of edge filter 11 is adjacent to be formed simultaneously.
<Ultraviolet ray intensity is determined>
Then, (a), (b), (c) based on Fig. 6 and Fig. 7 illustrates the inspection of the light accepting part 10A of light-receiving device 1 ultraviolet ray intensity
Survey principle.Fig. 6 is the curve map of the spectral transmission characteristic for the UV edge filters 11 for representing above-mentioned light accepting part 10A.Fig. 7's
(a) be the first photo detector sensitivity for representing above-mentioned light accepting part 10A curve map.Fig. 7 (b) is to represent above-mentioned light accepting part
The curve map of 10A the second photo detector sensitivity.Fig. 7 (c) is the ultraviolet sensitivity (second for representing above-mentioned light accepting part 10A
The sensitivity of the-the first photo detector of photo detector sensitivity) curve map.
As it was previously stated, the light accepting part 10A of light-receiving device 1 include each other structure identical the first photo detector PD1 and second by
Optical element PD2, is only formed with the upside of the first photo detector PD1 by the UV light cutoff filters of the light cut-off of the wavelength of ultraviolet region
Piece 11.The UV edge filters 11 are as shown in fig. 6, the light of ultraviolet region of the cut-off such as 300~400nm.
In the case of above-mentioned light accepting part 10A diffusion structure, using by P type substrate P_sub and N-type potential well layer N_well structures
Into PN junction constituted photodiode PD1_ir, PD2_ir, N-type potential well layer N_well and p-type potential well layer P_well it
Between the PN junction that constitutes constituted photodiode PD1_vis, PD2_vis, by p-type potential well layer P_well and n type diffused layer N structures
Into PN junction this 3 photodiodes of photodiode PD1_uv, PD2_uv for being constituted absorb light.
Therefore, the second photo detector PD2 the second photo detector sensitivity turns into the spectral sensitivity shown in Fig. 7 (b)
Characteristic.On the other hand, UV edge filters 11, therefore the first photo detector PD1 are provided with the upside of the first photo detector PD1
Spectral sensitivity characteristic turn into Fig. 7 (a) shown in spectral sensitivity characteristic.
Moreover, in the sensor circuit portion 20 of light-receiving device 1, subtracter 21 calculates digital output value ADCOUNT2 and numeral
Output valve ADCOUNT1 difference.Above-mentioned difference obtained from calculating by subtracter 21 is from incident second photo detector
The intensity of PD2 light subtracts value obtained from the intensity of incident first photo detector PD1 light.Therefore, light accepting part 10A is overall
Spectral sensitivity characteristic can be considered as the spectral sensitivity characteristic shown in Fig. 7 (c).
Thus, light accepting part 10A only has sensitivity in wavelength for below 400nm ultraviolet region, therefore light-receiving device 1 can
Correctly determine ultraviolet ray intensity.That is, in the light accepting part 10A of present embodiment, P type substrate P_sub, N-type potential well
Layer N_well and p-type potential well layer P_well is being electrically same potential or is being short-circuited.Therefore, in the present embodiment, such as Fig. 7
(a), (b), (c) shown in, the visible region and infrared light of the first photo detector sensitivity and the second photo detector sensitivity
The sensitivity in region is small, as a result, the noise of visible region and infrared light region is small.
Therefore, by the light-receiving device 1 of present embodiment, the optical sensitivity height and visible ray for ultraviolet light can be realized
The few light-receiving device 1 of the noise of region and infrared light region and the portable electric appts for being adapted for ultraviolet light detection.
In addition, according to the manufacture method of the light-receiving device 1 of present embodiment, using the first light with identical stepped construction
Element PD1 and the second photo detector PD2, therefore manufacturing process becomes easy, can reduce cost.
In addition, in the light-receiving device 1 of present embodiment, in order to determine ultraviolet ray intensity, having used by photodiode PD_
The photodiode that this 3 PN junctions of ir, photodiode PD_vis, photodiode PD_uv are constituted.But, in the present invention,
Not limited to this, for example, can also use lesser amount of photodiode to determine illumination.
Like this, the light-receiving device 1 of present embodiment include the first photo detector PD1, with the first photo detector PD1 structure phases
With the second photo detector PD2 and formed on the first photo detector PD1 as by the optical filtering of the wavelength cut-off of ultraviolet region
The UV edge filters 11 of piece, by calculating the output from the first photo detector PD1 and the second photo detector PD2,
The only output of the wavelength of output ultraviolet region.Moreover, the first photo detector PD1 and the second photo detector PD2 are respectively by making
The N-type gesture of the first diffusion layer as the second conductivity type is formed on P type substrate P_sub for the Semiconductor substrate of the first conductivity type
Well layer N_well, forms the p-type potential well layer P_ as the second diffusion layer of the first conductivity type in N-type potential well layer N_well
Well, forms in p-type potential well layer P_well and is formed as the n type diffused layer N of the 3rd diffusion layer of the second conductivity type.This
Outside, P type substrate P_sub, N-type potential well layer N_well and p-type potential well layer P_well are being electrically same potential or are being short-circuited.
According to above-mentioned structure, light-receiving device 1 is formed with the UV light cutoff filters of the wavelength cut-off of ultraviolet region by calculating
First photo detector PD1 of piece 11 output with without formation by the of the UV edge filters 11 of the wavelength cut-off of ultraviolet region
The mode of the difference of two photo detector PD2 output, only detects the wavelength of ultraviolet region.
But, in this light-receiving device 1, it is being formed with the of the UV edge filters 11 of the wavelength cut-off of ultraviolet region
In one photo detector PD1, be formed with UV edge filters 11 on oxide-film, thus each wavelength reflection/transmission characteristic with not having
There is the second photo detector PD2 to form UV edge filters 11 different.As a result, the first photo detector sensitivity with second by
In optical element sensitivity, it is seen that the spectral sensitivity of light region and infrared light region is not identical waveform.As a result, in the presence of
Following problem：When carrying out subtraction to 2 photo detector sensitivity, it is left noise in visible region and infrared light region, enters
And, the overlapping wavelengths of the noise and ultraviolet region, therefore can not correctly be calculated.
Therefore, in the present embodiment, the first photo detector PD1 and the second photo detector PD2 first respectively by leading
The N-type potential well layer N_well of the second conductivity type is formed on the P type substrate P_sub of electric type, is formed in N-type potential well layer N_well
The p-type potential well layer P_well of one conductivity type, formed in p-type potential well layer P_well the second conductivity type n type diffused layer N and shape
Into.In addition, P type substrate P_sub, N-type potential well layer N_well and p-type potential well layer P_well are being electrically same potential or short
Road.
That is, in the present embodiment, the structure for making the first photo detector PD1 and the second photo detector PD2 is 3 weights
Diffusion structure, also, make P type substrate P_sub, N-type potential well layer N_well and p-type potential well layer P_well be electrically identical electricity
Position is short-circuited.Thereby, it is possible to suppress the first photo detector sensitivity and second in visible region and infrared light region
Photo detector sensitivity.
The uneven reduction of sensitivity therefore, it is possible to provide achievable ultraviolet region and visible region and infrared light district
The light-receiving device 1 of the noise reduction in domain.
In addition, in the light-receiving device 1 of present embodiment, by the UV edge filters 11 of the wavelength cut-off of ultraviolet region by dioxy
SiClx (SiO2) and niobium pentoxide (Nb2O5) or silica (SiO2) and titanium dioxide (TiO2) or silica (SiO2) and
Aluminum oxide (Al2O3) inteferometer coating is constituted formed by stacking repeatedly successively.
Thus, UV edge filters 11 are made up of multilayer film, therefore, it is possible to change UV light cutoff filters using thickness, the number of plies
The characteristic of piece 11.In addition, niobium pentoxide (Nb2O5), titanium oxide (TiO2) and aluminum oxide (Al2O3) there is high index of refraction, reflection
Rate is high, therefore the shielding of light is excellent.In addition, from high index of refraction aspect, most preferably titanium oxide (TiO2), second is excellent
Select niobium pentoxide (Nb2O5), the 3rd preferred aluminum oxide (Al2O3)。
On the other hand, silica (SiO2) refraction it is forthright low, but insulating properties is high.As a result, the niobium pentoxide
(Nb2O5) or titanium oxide (TiO2) or aluminum oxide (Al2O3) and silica (SiO2) stacking be suitable to by sputter carry out layer
It is folded.
In addition, in the light-receiving device 1 of present embodiment, will be used as by sputtering method as the UV edge filters 11 of inteferometer coating
Silica (the SiO of oxide-film2) be used as metal film niobium pentoxide (Nb2O5) or titanium dioxide (TiO2) or aluminum oxide
(Al2O3) be laminated and formed repeatedly successively.Thereby, it is possible to high-precision vacuum evaporation film.
In addition, the sputter process temperature of the preferred sputtering method of light-receiving device 1 of present embodiment is less than 95 DEG C.
That is, in the present embodiment, using stripping resist to the UV of the wavelength cut-off of ultraviolet region is cut
Only optical filter 11 carry out it is Resist patterning, on the Resist patterns by sputtering method formation inteferometer coating, by peel off will tool
There are the photodiode of inteferometer coating and the photodiode without inteferometer coating to be adjacent to be formed simultaneously.
In the case, there is problems with, i.e. when underlayer temperature is raised, the degassing from resist is produced much,
Due to the fluctuation of sputter temperature, transmissivity is easily produced in visible region and the transmission domain of infrared light region uneven.
Therefore, in the present embodiment, the sputter process temperature for making sputtering method is less than 95 DEG C.Thereby, it is possible to suppress to splash
The fluctuation of temperature is penetrated, suppresses the transmission domain in visible region and infrared light region and occurs transmissivity inequality, and then can carry
It is high for the optical sensitivity for ultraviolet light, and the few light-receiving device 1 of noise of visible region and infrared light region.
In addition, the portable electric appts of present embodiment have the light-receiving device 1 of present embodiment.Thereby, it is possible to provide
The uneven reduction of sensitivity with achievable ultraviolet region and the noise reduction of visible region and infrared light region by
The portable electric appts such as smart mobile phone of light device.
In addition, the manufacture method of the light-receiving device 1 of present embodiment includes：Formed the UV of the wavelength cut-off of ultraviolet region
During edge filter 11, it will peel off with Resist patterning in the process on the second photo detector PD2；From upside to the first light
The process of stripping resist formation inteferometer coating on element PD1 and the second photo detector PD2 after patterning；Shelled with passing through
From, there will be inteferometer coating the first photo detector PD1 and in the absence of inteferometer coating the second photo detector PD2 with side adjacent to each other
The process that formula is formed simultaneously.
According to above-mentioned manufacture method, using stripping resist to by the UV light cutoff filters of the wavelength cut-off of ultraviolet region
Piece 11 carries out Resist patterning, on the first photo detector PD1 and forms inteferometer coating on Resist patterns, passes through and peel off, will
The first photo detector PD1 with inteferometer coating and the second photo detector PD2 without inteferometer coating are adjacent to be formed simultaneously.
Thereby, it is possible to use the P type substrate P_sub comprising the silicon as general semi-conducting material, it can be carried with low cost
For having the manufacture of the light-receiving device 1 of the small sensitivity of error in ultraviolet region, particularly 300nm~400nm wavelength region
Method.
[embodiment 2]
Another embodiment of the invention is described as follows based on Fig. 2, Fig. 3 and Fig. 8~Figure 11.In addition, this reality
The structure applied beyond the structure illustrated in mode is identical with above-mentioned embodiment 1.In addition, for convenience of explanation, pair with above-mentioned reality
The part shown in the accompanying drawing for applying mode 1 has the part mark identical mark of identical function, and the description thereof will be omitted.
The light-receiving device 1 of present embodiment is as shown in Figures 2 and 3, same with the light accepting part 10A that illustrates in above-mentioned embodiment 1
There is light accepting part 10B sample.In addition, in figs. 2 and 3, light accepting part 10B function is same with light accepting part 10A function phase, therefore
The description thereof will be omitted.
Moreover, light of the light accepting part 10B in the light-receiving device 1 of above-mentioned embodiment 1 in the light-receiving device 1 of present embodiment
Outside portion 10A structure, also as shown in figure 8, being laminated with silicon oxide layer 31 and silicon between P type substrate P_sub and dielectric film 13a
Nitride film 32, it is different in this point.
The structure of the light accepting part 10B in the light-receiving device 1 of present embodiment is illustrated based on Fig. 8~Figure 11.Fig. 8 is table
Show the sectional view of the structure of light accepting part 10B in the light-receiving device 1 of present embodiment.Fig. 9 is the ultra-violet (UV) band for representing above-mentioned light accepting part
The curve map of the silicon oxide layer thickness dependence of reflectivity in domain.Figure 10 is anti-in the ultraviolet region for represent above-mentioned light accepting part
Penetrate the curve map of the silicon nitride film thickness dependence of rate.Figure 11 is the refractive index (n) for representing the silicon nitride film in above-mentioned light accepting part
With the curve map of the wavelength dependency of extinction coefficient (k).
Light accepting part 10B in the light-receiving device 1 of present embodiment as shown in figure 8, have by being formed in P type substrate P_ respectively
Sequentially formed on 3 layers of the diffusion layer that p-type potential well layer P_well, N-type potential well layer N_well and n type diffused layer N on sub are constituted
Silicon oxide layer 31 and silicon nitride film 32.Moreover, forming the dielectric film 13a being made up of silicon oxide layer on the stacked film.
Above-mentioned silicon oxide layer 31 and silicon nitride film 32 work as the antireflection film of the reflection for suppressing incident light.
First photo detector PD1 and the second photo detector PD2 have insertion dielectric film 13a, silicon nitride film 32 and silicon respectively
Oxide-film 31 and reach as the 3rd diffusion layer n type diffused layer N surface cathode electrode 14a, 14b.
In addition, the first photo detector PD1 and the second photo detector PD2 have insertion dielectric film 13a, silicon nitride film 32 respectively
Reach with silicon oxide layer 31 P type substrate P_sub surface, N-type potential well layer N_well surface, p-type potential well layer P_well
Anode electrode 15a, the 15b on surface.
Light accepting part 10B is configured in ultraviolet region, is particularly 200nm~400nm wavelength region (hereinafter also referred to as
Ultraviolet region) there is high optical sensitivity.In order to have high optical sensitivity in ultraviolet region, it is necessary first to suppress ultraviolet
Reflection in region.Reflectivity is mainly determined by refractive index n and thickness.If thus, for example be set in silicon oxide layer 31
In the case that refractive index n is about 1.45, its thickness is 15nm or so, in the case where the refractive index n of silicon nitride film 32 is about 2,
Its thickness is 40nm or so, then reflectivity can be reduced to about 10%, with not forming silicon nitride film on silicon oxide layer
In the case of reflectivity 30% compare, can make optical sensitivity improve about 20%.
In addition, as shown in Figure 9, making the thickness of silicon nitride film 32 for 40nm, being made up of as passivating film silicon oxide layer
Dielectric film 13a, 13b, 13c, 13d thickness be 4000nm in the case of, for the light of 320nm~380nm wavelength region
With the light of 300nm~400nm wavelength region, can if the thickness of silicon oxide layer 31 is set in the range of 3~25nm
Access and the situation that does not form silicon nitride film 32 is equal or reflectivity below it.
On the other hand, for silicon nitride film 32, make the thickness of silicon oxide layer 31 for 8nm, make as passivating film by
In the case that the thickness of (32~35) that silicon oxide layer is constituted is 4000nm, as shown in Figure 10, for 320nm~380nm ripple
The light of the light in long region and 300nm~400nm wavelength region, by the way that the thickness of silicon nitride film 32 is set in into 10~60nm's
In the range of, result in and the situation that does not form silicon nitride film 32 is equal or reflectivity below it.
The film thickness range of silicon oxide layer 31 is 3~15nm, preferably 3~10nm.In addition, relative to the film of silicon oxide layer 31
The film thickness range of the silicon nitride film 32 of thick scope is 25~45nm, preferably 30~40nm.In addition, above-mentioned reflectivity is according to silica
Change film 31, the refractive index of dielectric film 13a, 13b, 13c, 13d as passivating film and silicon nitride film 32 and change, therefore with it is upper
In the case that the refractive index n stated value is different, suitably change thickness.
In addition, as described above, in order that the first photo detector PD1 and with the first photo detector PD1 structures identical
Two photo detector PD2 have high optical sensitivity, it is necessary to reduce the silicon nitride film 32 in ultraviolet region in ultraviolet region
Extinction coefficient k.
In the past, the extinction coefficient k in the ultraviolet region of the silicon nitride film used as antireflection film is big, therefore occurs by preventing
The UV Absorption that reflectance coating is carried out, although reflection can be suppressed, but the light quantity of incident photodiode is reduced, for ultra-violet (UV) band
The light in domain can not have sufficient sensitivity.
Therefore, in the present embodiment, by optimizing the membrance casting condition of silicon nitride film 32, as shown in figure 11, silicon is made
Nitride film 32 also has less than 0.01, preferably less than 0.003 extinction coefficient k in 200nm~400nm wavelength region.
Specifically, RF power during film forming by making silicon nitride film 32 is 400~500W, SiH4(silane)/NH3's
Flow rate ratio is that 0.1~0.25, chamber pressure is that 2~3Torr, chamber temp are 400 DEG C, can realize above-mentioned silicon nitride film 32
Extinction coefficient k reduction.
In addition, for silicon oxide layer 31, also by make to be formed silicon oxide layer 31 and dielectric film 13a as passivating film,
RF power when 13b, 13c, 13d is 2000W, SiH4(silane)/O2Flow rate ratio be that 0.5~0.7, chamber temp is 400
DEG C, the extinction coefficient k of silicon oxide layer 31 can be made to be formed as less than 0.01, make the absorption drop of the ultraviolet light in photo-electric conversion element
It is low to less than 1%.
Thus, suppress the ultraviolet light as caused by each film of antireflection film to reflect, and by making the extinction coefficient k of each film be
Less than 0.01, it can also suppress the UV Absorption of antireflection film.As a result, can obtain high for ultraviolet region sensitivity
Light accepting part 10B.
As described above, in the present embodiment, to using P type substrate P_sub as Semiconductor substrate, being used as antireflection
Film, detailed narration has been carried out using the general silicon oxide layer 31 used of silicon class and the situation of silicon nitride film 32.It is however not limited to
This, even if using titanium oxide film (TiO2), aluminum oxide (Al2O3) (also referred to as " alumina ") etc. other films, by suitably selecting
Refractive index n and thickness are obtained while same reflection suppression effect, by make the extinction coefficient k of the film for less than 0.01 come
Suppress the light absorbs as caused by antireflection film, can equally obtain highly sensitive light accepting part 10B.
In addition, in the present embodiment, using silicon substrate as P type substrate P_sub, but it is also possible to use SOI
(Silicon on Insulator：Silicon on insulated substrate) other silicon class substrates such as substrate.Even in addition, beyond silicon class
Substrate, if suitable substrate can also be used.
[embodiment 3]
Further embodiment to the present invention is described as follows.In addition, the structure outside illustrating in present embodiment,
It is identical with above-mentioned embodiment 1 and embodiment 2.In addition, for convenience of description, pair with above-mentioned embodiment 1 and embodiment 2
Accompanying drawing in the part that shows there is the part mark same tag of identical function, the description thereof will be omitted.
The light accepting part 10A of the above-mentioned embodiment 1 and light accepting part 10B of embodiment 2 is made up of the diffusion layer of 3 weights.Specifically
For, the N-type potential well layer N_ of the n type diffused layer of the second conductivity type as the first diffusion layer is formed with P type substrate P_sub
Well, is formed with the P type substrate P_sub of the first conductivity type as the second diffusion layer in the first diffusion layer, in the second diffusion
The n type diffused layer N of the 3rd diffusion layer as the second conductivity type is formed with layer.
It is however not limited to the structure.For example, being made up of the diffusion layer of 3 weights, this point is constant, but can make the diffusion of 3 weights
The conductivity type of layer is opposite.
Specifically, it can also be formed with the Semiconductor substrate of N-type as the first diffusion layer the first conductivity type of formation
P type diffused layer, the n type diffused layer of the second conductivity type as the formation of the second diffusion layer is formed in the first diffusion layer, the
The p type diffused layer P of the first conductivity type as the 3rd diffusion layer is generated in two diffusion layers.
[summary]
The light-receiving device 1 of the mode 1 of the present invention, it includes：First photo detector PD1；Tied with above-mentioned first photo detector PD1
The second photo detector of structure identical PD2；With wavelength cut-off by ultraviolet region of the formation on above-mentioned first photo detector PD1
Optical filter (UV edge filters 11), by entering to the output from above-mentioned first photo detector PD1 and the second photo detector PD2
Row is calculated, and only exports the output of the wavelength of above-mentioned ultraviolet region, the light-receiving device 1 is characterised by：Above-mentioned first photo detector PD1
It is conductive by forming second in the Semiconductor substrate (P type substrate P_sub) of the first conductivity type respectively with the second photo detector PD2
The first diffusion layer (N-type potential well layer N_well) of type, formation first is led in above-mentioned first diffusion layer (N-type potential well layer N_well)
The second diffusion layer (p-type potential well layer P_well) of electric type, forms second in above-mentioned second diffusion layer (p-type potential well layer P_well)
3rd diffusion layer (n type diffused layer N) of conductivity type and formed, and above-mentioned Semiconductor substrate (P type substrate P_sub), above-mentioned
One diffusion layer (N-type potential well layer N_well) and the second diffusion layer (p-type potential well layer P_well) be electrically same potential or by
Short circuit.
In this light-receiving device, in the first photo detector by the optical filter of the wavelength cut-off of ultraviolet region is formed with,
Optical filter, therefore the reflection/transmission characteristic of each wavelength and the second light member for not forming optical filter are formed with oxide-film
Part is different.As a result, in the first photo detector sensitivity and the second photo detector sensitivity, it is seen that light region and infrared light
The spectral sensitivity in region is not identical waveform.As a result, the problem of having following such, i.e. when to 2 photo detectors
When sensitivity carries out subtraction, in visible region and infrared light region residual noise, and then the wavelength of the noise and ultraviolet region
It is overlapping, thus can not correctly be calculated.
Therefore, in the present invention, the first photo detector and the second photo detector pass through partly leading in the first conductivity type respectively
The first diffusion layer of the second conductivity type is formed on body substrate, the second diffusion layer of the first conductivity type is formed in the first diffusion layer,
The 3rd diffusion layer of the second conductivity type is formed in above-mentioned second diffusion layer and is constituted, and Semiconductor substrate, the first diffusion layer
It is being electrically same potential or is being short-circuited with the second diffusion layer.
That is, in the present invention, the structure for making the first photo detector and the second photo detector is 3 re-diffusion structures,
And it is being electrically same potential or short circuit to make Semiconductor substrate, the first diffusion layer and the second diffusion layer.Thereby, it is possible to suppress
Visible region and the first photo detector sensitivity and the second photo detector sensitivity of infrared light region.
The uneven reduction of sensitivity therefore, it is possible to provide achievable ultraviolet region and visible region and infrared light district
The light-receiving device of the noise reduction in domain.
The light-receiving device 1 of the mode 2 of the present invention is on the basis of the light-receiving device of mode 1, the preferably above-mentioned ripple by ultraviolet region
The optical filter (UV edge filters 11) of long cut-off is made up of inteferometer coating, and the inteferometer coating is by by silica (SiO2) and five oxygen
Change niobium (Nb2O5) or silica (SiO2) and titanium dioxide (TiO2) or silica (SiO2) and aluminum oxide (Al2O3) according to
It is secondary repeatedly be laminated and formed.
Thus, optical filter is made up of multilayer film, can change the characteristic of optical filter by thickness or the number of plies.In addition, five
Niobium oxide (Nb2O5), titanium oxide (TiO2) and aluminum oxide (Al2O3) there is high index of refraction, reflectivity is high, therefore better than progress light
Masking.
On the other hand, silica (SiO2Although) reflect forthright low, insulating properties height.As a result, the niobium pentoxide
(Nb2O5) or titanium oxide (TiO2) or aluminum oxide (Al2O3) and silica (SiO2) stacking be suitable to by sputter carry out layer
It is folded.
The light-receiving device 1 of the mode 3 of the present invention is on the basis of the light-receiving device of mode 2, preferably above-mentioned interference film (UV cut-off filters
Mating plate 11) silica (SiO of oxide-film will be used as by using sputtering method2) be used as metal film niobium pentoxide (Nb2O5)
Or titanium dioxide (TiO2) or aluminum oxide (Al2O3) be laminated and formed repeatedly successively, the sputter process temperature of above-mentioned sputtering method is 95
Below DEG C.
Thereby, it is possible to accurately vacuum evaporation film.
In addition, in the present invention, the optical filter of the wavelength cut-off of ultraviolet region is carried out with resist using stripping against corrosion
Agent is patterned, by sputtering method formation inteferometer coating on the Resist patterns, by peeling off the pole of photoelectricity two with inteferometer coating
Pipe and the photodiode without inteferometer coating are adjacent to be formed simultaneously.
In the case, with following problem：When underlayer temperature is raised, the gas of getting rid of from resist is produced much,
Due to the fluctuation of sputter temperature, it is uneven that the transmission domain in visible region and infrared light region easily produces transmissivity.
Therefore, in the present invention, the sputter process temperature for making sputtering method is less than 95 DEG C.Thereby, it is possible to suppress sputtering temperature
The fluctuation of degree, suppressing transmission domain in visible region and infrared light region, to produce transmissivity uneven, and then can provide pair
It is high in the optical sensitivity of ultraviolet light, and the few light-receiving device of noise of visible region and infrared light region.
The portable electric appts of mode 4 of the present invention are characterised by, including in mode 1~3 described in either type
Light-receiving device.
According to foregoing invention, using the teaching of the invention it is possible to provide the uneven reduction of the sensitivity with achievable ultraviolet region and visible region
The portable electric appts such as smart mobile phone of the light-receiving device of the noise reduction of domain and infrared light region.
The manufacture method of the light-receiving device 1 of the mode 5 of the present invention is the system of the light-receiving device described in either type in mode 1~3
Method is made, the manufacture method is characterised by, including：Forming the optical filter by the wavelength cut-off of ultraviolet region, (UV cut-offs are filtered
Mating plate 11) when, it will peel off with Resist patterning in the process on the second photo detector PD2；From upside to above-mentioned first light
The process of the resist formation inteferometer coating of the stripping on the second photo detector PD2 after element PD1 and above-mentioned patterning；With pass through
Peel off, there will be inteferometer coating the first photo detector PD1 and in the absence of inteferometer coating the second photo detector PD2 with adjacent to each other
The process that mode is formed simultaneously.
It is against corrosion for the optical filter of the wavelength cut-off of ultraviolet region is carried out with resist using stripping according to foregoing invention
Agent is patterned, and on the first photo detector and inteferometer coating is formed on Resist patterns, by peeling off first with inteferometer coating
Photo detector and the second photo detector without inteferometer coating are adjacent to be formed simultaneously.
Thereby, it is possible to use the substrate for including the silicon as general semi-conducting material, it can be provided with low cost in purple
There is the manufacture method of the light-receiving device of the small sensitivity of error in exterior domain, particularly 300nm~400nm wavelength region.
In addition, the invention is not restricted to above-mentioned each embodiment, can be carried out in the scope shown in claim various
Change, the present invention is also contained in by embodiment obtained from disclosed technological means is appropriately combined respectively in different embodiments
Technical scope in.
Industrial applicability
The present invention can be suitable as the light-receiving device that ultraviolet light transducer uses and the smart mobile phone for using the light-receiving device
Deng portable electric appts and light-receiving device manufacture method.
Description of reference numerals
1 light-receiving device
10A light accepting parts
10B light accepting parts
11 UV edge filters
12 diaphragms
13a~13d dielectric films
14a, 14b cathode electrode
15a, 15b anode electrode
16a~16c photomasks (multilayer wired)
20 sensor circuit portions
21 subtracters
31 silicon oxide layers
32 silicon nitride films
N n type diffused layers
N_well N-type potential well layers
OUT lead-out terminals
P_sub P type substrates
The photo detectors of PD1 first
PD1_ir photodiodes
PD1_uv photodiodes
PD1_vis photodiodes
The photo detectors of PD2 second
PD2_ir photodiodes
PD2_uv photodiodes
PD2_vis photodiodes.
Claims (5)
1. a kind of light-receiving device, it includes：First photo detector；With the second light of the first photo detector structure identical member
Part；With the optical filter for forming the wavelength cut-off by ultraviolet region on first photo detector, by from described the
The output of one photo detector and the second photo detector carries out computing, only exports the output of the wavelength of the ultraviolet region, the light
Device is characterised by：
First photo detector and the second photo detector in the Semiconductor substrate of the first conductivity type respectively by forming second
First diffusion layer of conductivity type, forms the second diffusion layer of the first conductivity type in first diffusion layer, expands described second
Dissipate the 3rd diffusion layer that the second conductivity type is formed in layer and formed, also,
The Semiconductor substrate, first diffusion layer and the second diffusion layer are being electrically same potential or are being short-circuited.
2. light-receiving device as claimed in claim 1, it is characterised in that：
The optical filter of the wavelength cut-off by ultraviolet region is made up of inteferometer coating, and the inteferometer coating is by by silica (SiO2)
With niobium pentoxide (Nb2O5) or silica (SiO2) and titanium dioxide (TiO2) or silica (SiO2) and aluminum oxide
(Al2O3) be laminated and formed repeatedly successively.
3. light-receiving device as claimed in claim 2, it is characterised in that：
The inteferometer coating will be used as the silica (SiO of oxide-film by using sputtering method2) and be used as the niobium pentoxide of metal film
(Nb2O5), titanium dioxide (TiO2) or aluminum oxide (Al2O3) be laminated and formed, the sputter process temperature of the sputtering method repeatedly successively
Spend for less than 95 DEG C.
4. a kind of portable electric appts, it is characterised in that：
Including light-receiving device according to any one of claims 1 to 3.
5. a kind of manufacture method of light-receiving device, it is the manufacture method of light-receiving device according to any one of claims 1 to 3, its
It is characterised by, including：
When forming the optical filter by the wavelength cut-off of ultraviolet region, it will peel off with Resist patterning on the second photo detector
Process；
The stripping on second photo detector after first photo detector and patterning is formed with resist from upside
The process of inteferometer coating；With
By peel off, there will be inteferometer coating the first photo detector and in the absence of inteferometer coating the second photo detector with adjacent to each other
Mode simultaneously formed process.
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| PCT/JP2015/071376 WO2016063594A1 (en) | 2014-10-20 | 2015-07-28 | Light receiver, portable electronic device and method for producing light receiver |
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| US10770505B2 (en) * | 2017-04-05 | 2020-09-08 | Intel Corporation | Per-pixel performance improvement for combined visible and ultraviolet image sensor arrays |
| JP7361490B2 (en) | 2019-05-07 | 2023-10-16 | 日本ルメンタム株式会社 | Semiconductor photodetector and method for manufacturing semiconductor photodetector |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009047768A (en) * | 2007-08-15 | 2009-03-05 | Toray Ind Inc | Manufacturing method for color filter for liquid crystal display |
| CN102034833A (en) * | 2009-09-24 | 2011-04-27 | 台湾积体电路制造股份有限公司 | Sensor and manufacturing method thereof |
| US20110181765A1 (en) * | 2010-01-22 | 2011-07-28 | Rohm Co., Ltd. | Imaging device |
| CN102455215A (en) * | 2010-10-14 | 2012-05-16 | 罗姆股份有限公司 | Light detection device and optical filter of light detection device |
| JP2013229436A (en) * | 2012-04-25 | 2013-11-07 | Renesas Electronics Corp | Semiconductor device, illuminance sensor, and method of manufacturing semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3428828B2 (en) | 1996-09-05 | 2003-07-22 | シャープ株式会社 | Photodetector with built-in circuit |
| JP2013197243A (en) | 2012-03-19 | 2013-09-30 | Rohm Co Ltd | Optical sensor and output circuit thereof |
| JP2015032663A (en) * | 2013-08-01 | 2015-02-16 | 株式会社東芝 | Solid-state imaging device |
| JP6346826B2 (en) * | 2014-08-06 | 2018-06-20 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor integrated circuit device |
| JP6767774B2 (en) * | 2016-05-19 | 2020-10-14 | ラピスセミコンダクタ株式会社 | Semiconductor devices and methods for manufacturing semiconductor devices |
-
2015
- 2015-07-28 JP JP2016555108A patent/JP6185193B2/en active Active
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- 2015-07-28 WO PCT/JP2015/071376 patent/WO2016063594A1/en active Application Filing
- 2015-07-28 US US15/513,109 patent/US10084006B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009047768A (en) * | 2007-08-15 | 2009-03-05 | Toray Ind Inc | Manufacturing method for color filter for liquid crystal display |
| CN102034833A (en) * | 2009-09-24 | 2011-04-27 | 台湾积体电路制造股份有限公司 | Sensor and manufacturing method thereof |
| US20110181765A1 (en) * | 2010-01-22 | 2011-07-28 | Rohm Co., Ltd. | Imaging device |
| CN102455215A (en) * | 2010-10-14 | 2012-05-16 | 罗姆股份有限公司 | Light detection device and optical filter of light detection device |
| JP2013229436A (en) * | 2012-04-25 | 2013-11-07 | Renesas Electronics Corp | Semiconductor device, illuminance sensor, and method of manufacturing semiconductor device |
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| JPWO2016063594A1 (en) | 2017-05-25 |
| CN107078182B (en) | 2019-04-05 |
| US20170294474A1 (en) | 2017-10-12 |
| WO2016063594A1 (en) | 2016-04-28 |
| JP6185193B2 (en) | 2017-08-30 |
| US10084006B2 (en) | 2018-09-25 |
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