CN107078142A - Bent by the imaging sensor of the substrate expansion of induction - Google Patents

Bent by the imaging sensor of the substrate expansion of induction Download PDF

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Publication number
CN107078142A
CN107078142A CN201580050442.XA CN201580050442A CN107078142A CN 107078142 A CN107078142 A CN 107078142A CN 201580050442 A CN201580050442 A CN 201580050442A CN 107078142 A CN107078142 A CN 107078142A
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substrate
image sensor
sensor chip
bending
volume
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CN107078142B (en
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G·P·麦克尼格特
J·J·瓦乔
J·A·格雷茨
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Microsoft Technology Licensing LLC
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Microsoft Technology Licensing LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation

Abstract

In certain embodiments, technology and framework for image sensor chip of the manufacture with curved surface, which are included on the first surface of image sensor chip, places substrate, the wherein first surface of image sensor chip and the second surface of image sensor chip is relative, and wherein the second surface of image sensor chip includes optical sensor to produce electric signal in response to receiving light.Manufacture also includes the volume of modification substrate to produce image sensor chip applying power the image sensor chip of bending.

Description

Bent by the imaging sensor of the substrate expansion of induction
Background technology
Optical system is generally used in many devices, such as camera, telescope, binoculars, office equipment, Yi Jike Instrument is learned, several examples are only enumerated.Optical system can include lens, speculum, and/or one or more light sensing apparatus. Depend on the design and the master-plan of system of each element of system, it elaborates element the performance section of optical system Among optical interaction.For example, the light output of a lens can be the light input of subsequent lens or light sensing apparatus.
The light sensing apparatus of such as CMOS, charge coupling device (CCD) or photodiode is present in various optical systems In.Generally, CMOS or CCD configurations are in the array being manufactured on silicon substrate.The certain detail of array can be based at least partially on Section (positioning of the size of such as array, the resolution ratio of array and array relative to optical system remainder) and design to CMOS or ccd array provide a part for the optical system of light.
The content of the invention
The present disclosure describes the technology and framework for bending simultaneously formed image sensor.Especially, by flat, relative The imaging sensor of fragile material (such as silicon or germanium) manufacture can for example be formed after the imaging sensor is by manufacture, So that the photo-sensitive surface of the imaging sensor is bent to have sphere, aspherical or other shapes.
In order to form the imaging sensor of bending, substrate can be coupled and (for example engage, bond, deposit or be attached) to image The dorsal part of sensor.Substrate can then be subjected to increase any number of of substrate volume and chemically or physically react.Increase volume Bending force is produced due to the strain gradient between substrate and imaging sensor on the image sensor.
The choosing that the Summary introduces the following design further described in the detailed description in simplified form is provided Select.The Summary is not intended to the key feature or essential feature for identifying claimed theme, is also not intended to use In the scope for limiting claimed theme.Term " technology " can for example be related to manufacturing equipment, control system, method, calculating Machine readable instruction, module, algorithm or hardware logic (such as field programmable gate array (FPGA), application specific integrated circuit (ASIC), Application Specific Standard Product (ASSP), System on Chip/SoC system (SOC), CPLD (CPLD)), it can be with For performing context such as more than and throughout the technology allowed herein.
Brief description of the drawings
Illustrate and describe in detail referring to the drawings.In the accompanying drawings, the Far Left Digital ID of Ref. No. wherein Ref. No. The accompanying drawing occurred first.The use of identical reference numerals indicates similar or equivalent project or feature in different figures.
Fig. 1 is the top view of the image sensor chip according to various example embodiments.
Fig. 2 is to show to be served as a contrast according to the neutral axis, image sensor chip and Volume Changes of various example embodiments The side view at bottom.
Fig. 3 is the side view of image sensor chip according to various example embodiments and Volume Changes substrate.
Fig. 4 is the side of the image sensor chip in reaction vessel according to various example embodiments and Volume Changes substrate View.
Fig. 5 is the side view of image sensor chip according to the bending of various example embodiments and Volume Changes substrate.
Fig. 6 is changed with one heart according to the near central regions in Volume Changes substrate that have of many example embodiments The top view of the Volume Changes substrate of thickness.
Fig. 7 and Fig. 8 are the sectional views of the photo-sensitive surface of the curved images sensor chip according to various example embodiments.
Fig. 9 is the sectional view of curved images sensor chip according to various example embodiments and Volume Changes substrate.
Figure 10 is to include the optics of curved images sensor chip and Volume Changes substrate according to various example embodiments The sectional view of system.
Figure 11 is the flow chart for showing the processing for curved images sensor chip according to some example embodiments.
Embodiment
General introduction
Generally, optical system can include lens, speculum, and/or one or more light sensing apparatus, such as electric charge coupling Clutch part (CCD) or other devices that electric signal can be converted light energy into.Multiple CCD, which can be only fitted to, to be manufactured on substrate In array (such as pel array), substrate may, for example, be silicon, germanium or other semi-conducting materials.Manufacture the photaesthesia on substrate Device (other light sensing entities of one or more of such as CCD, CCD array or any number of configuration) is referred to herein as " image sensor chip ".It is to be noted, however, that the title, which can be related to, may not necessarily be configured as sensing image but sensing times The optical sensor of what optical signal (visible or invisible).
Image sensor chip can be bent so that the photo-sensitive surface of image sensor chip has the shape of bending Shape, it can provide many advantages compared with the image sensor chip of flat surfaces to the design of optical system.Especially, When optical system includes the image sensor chip of bending, compared with the image sensor chip of flat surfaces, including lens And/or the optical system of speculum has less design constraint.For example, some design constraints can include the number of lens Mesh, for tolerance of colored and/or space bias etc..Passed with sphere, aspherical or other surfaces images Sensor chip can cause high performance optical systems, and it produces the relatively uniform luminous intensity across image sensor chip surface And spatial frequency response.
, can be including " Volume Changes substrate " to be engaged to (such as fusion, welding), is glued in various example embodiments Attached (for example with adhesion or electrostatic force), deposition (such as by sputtering, casting, spraying) are attached to image sensor chip On processing in curved images sensor chip.Chemically or physically reaction can be used for the volume and chi for changing Volume Changes substrate It is very little.The volumetric expansion of Volume Changes substrate can produce the power for being transferred to image sensor chip.This power can pass image Sensor chip bends or is shaped as the shape of bending.In various example embodiments, by the volume for changing Volume Changes substrate Can be from Volume Changes substrate via for Volume Changes substrate and image sensor chip to be coupled with the power produced by size Boundary layer together and be transferred to image sensor chip.
Volume Changes substrate can by tension force deformed or bent image sensor chip.Due to image sensor chip There can be relatively low dark current compared with compressive state under tension, the use of tension force curved images sensor chip can have Benefit.It therefore, it can design volume and change substrate with so that most of region of image sensor chip is being bent or deformed It is in during for intended shape under tension force.The design can be based at least partially on the rigidity and/or thickness of Volume Changes substrate with Just image sensor chip is placed on the tension side of neutral bending axis line.
It can be controlled by any number of parameters for adjusting or selecting to be related in volumetric expansion processing by volumetric expansion Specific shaping to image sensor chip.For example, Volume Changes substrate can be at least partly by the given shape being expanded into Ground depends on the patterning or thickness distribution, imaging sensor core of Volume Changes substrate (and/or boundary layer, if present) The rigidity of piece, exposed to swelling agent Volume Changes substrate part compared to and be not exposed to the Volume Changes substrate of swelling agent Part (for example sheltering or position application by swelling agent) etc..
In certain embodiments, at least a portion that can be across image sensor module between the phase of expansion of substrate applies Bias pressure is to force specific 2D curvature shapes.For example, during substrate expansion, mould can be placed on imaging sensor In a part.
By thermal strain property mismatch between substrate and institute's application material of microelectronic component, in the processing of microelectronic component Two-dimensional curvature can occur for period.However, the curvature, which can produce to cross over, can for example manufacture multiple images sensor chip The relatively small amount of deflection of whole semiconductor wafer.The curvature may be not enough to produce the image sensor chip of bending.With by The local train gradient that thermal strain is provided is compared, and volumetric expansion can provide larger number level on image sensor chip Local train gradient.Volumetric expansion can be realized under the temperature and pressure of appropriateness, reducing in image sensor chip can be with Cause the Potential feasibility of the thermal stress of undesirable distortion.The appropriate temperature and pressure can also reduce sensor electronic device The possibility that part and additional functional layer are damaged during processing.In some instances, temperature and/or pressure can be controlled to control The expansion rate or amount of substrate processed.
Image sensor chip, interface/adhesion can be related to by the processing of volumetric expansion curved images sensor chip Layer, be subjected to expansion substrate, swelling agent and for realize cause environmental condition (such as temperature, pressure, the electricity of substrate expansion Chemical potential) nipper or container.Term " swelling agent " is used to describe to react or absorbed by substrate with substrate to cause lining Bottom is subjected to the material (chemicals, gas, element, compound, mixture etc.) of volumetric expansion.In some embodiments, expand Agent can be used for intercalation, and it is to include or be inserted into solid compounds (such as volume change by swelling agent (such as molecule or ion) Change substrate) in.
In various example embodiments, being bonded to the combination of the curved images sensor chip of Volume Changes substrate can wrap Independent Optical devices are included, it then can include into optical system.For example, producer can be manufactured including being bonded to volume Change the Optical devices of the curved images sensor chip combination of substrate.Producer can be to another manufacture for producing optical system Person provides the Optical devices.The Optical devices can include into the optical system.
In various example embodiments, being bonded to the combination of the area image sensor chip of Volume Changes substrate can wrap Include independent Optical devices, it can be provided to producer, the producer by cause Volume Changes substrate be subjected to chemistry or Physical treatment and make the area image sensor chip bend or shape.The producer can include Optical devices to lens system System or other optical systems in, or can then by the image sensor chip of obtained bending provide to can manufacture including Another producer of the optical system of the image sensor chip of bending.
Various example embodiments are further described referring to figs. 1 to Figure 11.
Exemplary environments
Fig. 1 is the top view of the image sensor chip 100 according to various example embodiments.Image sensor chip 100 Including Semiconductor substrate 102, photosensitive part 104 is built in Semiconductor substrate 102.It may, for example, be the photosensitive portion of ccd array 104 are divided to include one or more light sensors 106.Each light sensor 106 for example can correspond to partly by light The pixel of image produced by quick part 104.Photosensitive part 104 can be referred to as " zone of action ", and it can be converted light energy into Electric energy or electric signal.Unless otherwise stated, term " light " is related to the electromagnetic energy in the arbitrary portion of frequency spectrum.Thus, for example, Light or luminous energy include visible, infrared (IR), near-infrared (NIR) and ultraviolet (UV) part of electromagnetic spectrum.
Inactive area 108 can be at least partly around photo sensitive area 104.The non-work of light sensor can be lacked It can include each circuit element, conductive trace for operating photosensitive part 104 etc. with region 108.If for example, photosensitive portion It is ccd array to divide 104, and inactive area 108 can include being used to control the circuit of the row and column of CCD elements.Photosensitive part 104 With inactive area 108 each can take up image sensor chip 100 arbitrary portion region.Photosensitive part 104 It may, for example, be the square or rectangle with any the ratio of width to height (such as width is than height).
Semiconductor substrate 102 can include any number of element, include the combination of these elements, it can arbitrarily include Additional impurity (such as dopant).For example, Semiconductor substrate 102 can be silicon or germanium.In some instances, imaging sensor The thickness of chip 100 can from 5 to 10 microns in the range of about 1 millimeter.The width or length of image sensor chip 100 Degree can be in the range of from about 5 millimeters to about 25 millimeters.
Image sensor chip 100 can be included to the optics for providing light to image sensor chip 100 in a specific way In system.For example, in some embodiments, lens combination is configurable to the position with image sensor chip 100 The focal plane being consistent.In certain embodiments, lens combination is configurable to the bending with image sensor chip 100 The multifocal surface that the curved surface of version is consistent.In other embodiments, lens combination is configurable to have and passed with image The focal length that the focal length of sensor chip 100 is consistent.The optical element (such as lens and/or speculum) of optical system can at least portion Divide position and focal length that ground determines focal plane.Especially, the specific detail that can be based at least partially on photosensitive part 104 is (all If size, the resolution ratio of photosensitive part 104 and the photosensitive part 104 of photosensitive part 104 are relative to optical system remainder Positioning) and design to photosensitive part 104 provide light optical system a part.The performance of optical system depends on optical system The design and the master-plan of optical system of each optical element of system, it elaborates the optics phase among optical element Interaction.For example, the light output of a lens can be the light input of subsequent lens.Generally, the quality of optical element and it Arrangement relative to each other as resolution ratio is (for example, the light sensor 106 of CCD elements such as corresponding with each pixel Density) increase and improve.For example, the quality can be based at least partially on the parameter of single optical element, including but do not limit In structure and optical aberration, optical delivery or reflection, optical uniformity, positioning etc..
Fig. 2 is to show to include image sensor chip 204 and Volume Changes substrate 206 according to various example embodiments Configuration 202 neutral axis 200 side view.When Volume Changes substrate 206 expands in response to chemically or physically reacting, Power 208 is applied to image sensor chip 204.Neutral axis is virtual surface, and it separates the material being under tension force and place Material under compression.For example, in response to power 208, Volume Changes substrate 206 can be on neutral axis 200 in compression It is under neutral axis 200 under tension force down.Therefore image sensor chip 204 can be located at the lower section of neutral axis 200 It is under tension force.In other examples, substrate expansion processing, which can produce local bending moments to the image compressed, passes On sensor chip 204.Therefore, pure bending stress can be only compression.However, mechanical group relevant with substrate expansion Part can be biased to net tension, if producing enough volumetric expansions and another power is used to prevent bending reaction.Another power Can be surface pressing or mechanical constraint, such as mould.The position of neutral axis 200 is relative to image sensor chip 204 Position can influence the amount of bow of image sensor chip 204.The position of neutral axis 200 and " shape " can be at least in part Depending on many factors, such as layout of Volume Changes substrate 206, thickness and/or shape, and image sensor chip 204 Rigidity and thickness.Therefore, producer can control where to position neutral axis 200 at least in part based on these factors. For example, the rigidity for improving Volume Changes substrate 206 neutral axis can be had increasingly been towards image sensor chip 204 (and Possibly into wherein) and place.The rigidity of Volume Changes substrate 206 can depend, at least partially, on Volume Changes substrate 206 Thickness and material.
Fig. 3 to Fig. 5 shows the bending or formed image sensor chip (such as image biography according to some example embodiments Sensor chip 100) example process various pieces.This method can by any entity manually (such as by people), automatically (such as by machine) or its combination and perform.The entity that may, for example, be the producer, assembler, producer or founder exists This is referred to as " producer ".This method can include batch processing, wherein multiple (such as tens of, hundreds of or numbers can simultaneously be shaped Thousand) image sensor chip.
Fig. 3 is to include the configuration of image sensor chip 302 and Volume Changes substrate 304 according to various example embodiments 300 side view.Image sensor chip 302 includes photosensitive part 306, and for example it can be with the photosensitive part shown in Fig. 1 104 is same or similar.In some embodiments, Volume Changes substrate 304 is engaged, is laminated or is additionally coupled to image sensing The first surface 308 of device chip 302.Producer, which can use, to have the boundary layer 310 of adhesion characteristics to perform the coupling. However, in some embodiments, without using Adhesion Interface layer.In this case, Volume Changes substrate 304 can be directly Coupled to image sensor chip 302.
First surface 308 is relative with the second surface 312 including photosensitive part 306, and photosensitive part 306 is imaging sensor The photosensitive part of chip 302.Second surface 312 can also include inactive area 314, its can for example with shown in Fig. 1 Inactive area 108 is same or similar.Arrow 316 indicates that image sensor chip 302 is configured to the side of the incident light of reception To.
The edge 318 of image sensor chip 302 can be aligned or not aligned with the edge 320 of Volume Changes substrate 304. In some embodiments, Volume Changes substrate 304 can extend across the edge 318 of image sensor chip 302.At other In embodiment, image sensor chip 302 can extend across the edge 320 of Volume Changes substrate 304.
During expanding, Volume Changes substrate 304, which can occur on image sensor chip 302, causes stress and strain Power.Compared with thicker image sensor chip, overall strain of the bending strain for relatively thin image sensor chip 302 The contribution of state can be smaller.Generally, the combination of bending strain and elongation strain can be bent or formed image sensor chip 302.Producer can select the thickness of image sensor chip 302 to cause image sensor chip mechanically strong, it is allowed to Enough strains for being used to bend are applied in and do not produce crack or warpage.In some particular implementations, image sensing Device chip 302 can include using silicon-on-insulator (SOI) chip manufacture cmos sensor, SOI wafer have from about 3 to The device layer of thickness in about 10 micrometer ranges.
Volume Changes substrate 304 can include any number of material expanded as the result chemically or physically reacted Material.The material can include metal alloy, aluminium, titanium, polymer or elastomer, only enumerate several examples.For example, chemically or physically Reaction can include Volume Changes substrate 304 being exposed to any a variety of specific chemicals or element and/or apply electric current To Volume Changes substrate 304.
In some embodiments, initial (such as before the volumetric expansion) thickness of Volume Changes substrate 304 can be all over And image sensor chip 302 and it is virtually constant.In other embodiments, as shown in Figure 3, Volume Changes substrate 304 Original depth can change throughout image sensor chip 302.In some instances, the thickness of Volume Changes substrate 304 Can from the thickness of about image sensor chip 302 in the range of thicker about 25 microns than sensor chip.At it In his example, the thickness of Volume Changes substrate 304 at least several times can be more than the thickness of image sensor chip 302.For spy Determine example, image sensor chip 302 can about 5 to 10 microns of thickness and Volume Changes substrate 304 can be about 25 to 100 microns It is thick.In other examples, the thickness of image sensor chip 302 can be more than 10 microns, and Volume Changes substrate 304 can be with At least several times are thicker than image sensor chip 302.
In some exemplary embodiments, producer can be controlled by adjusting the thickness degree of Volume Changes substrate 304 The local curvature of image sensor chip 302.For example, the thickness degree can be determined by finite element modelling or experiment.It therefore, it can The shape of image sensor chip 302 is controlled to realize desired bending amplitude (such as local radius of curvature) and overall shape (such as parabola or sphere).
Volume Changes substrate 304 can be adhered to image sensor chip 302 and can also at least portion by boundary layer 310 Divide ground buffering from the bulk strain in Volume Changes substrate 304 of image sensor chip 302 to prevent big boundary Face stress.For example, not using the buffering, bulk strain can cross over Volume Changes substrate 304 to image sensor chip 302 Interface and increase, by peel off or cracking and cause the possible breakdown of image sensor chip.Buffering can be especially beneficial , because Volume Changes substrate 304 can be subjected to significantly expanding (strain) and image sensor chip 302 may be not subjected to and appoint What is strained.Therefore, the boundary between the substrate and sensor expanded, can occur strain mismatch, and this causes to play The localized stresses of the effect of unsticking or fracture image sensor chip 302.Boundary layer 310 can have adhesive properties and elasticity Attribute, it is enough to transmit stresses in image sensor chip 302 and while preventing of a relatively high local stress.In some realities Apply in mode, boundary layer 310 can include curable adhesive, such as epoxy resin or polyurethane.In other embodiment party In formula, boundary layer 310 can include thermoplastic, such as polyether-ether-ketone (PEEK) or polysulfone polymer.These materials or its He can have suitable composite rigidity, mechanical strength and viscosity to maintain integrality when being subjected to stress by interlayer materials And/or adhesiveness.In some cases, producer can be by the first table of surface-treatment applications to image sensor chip 302 Face 308 and/or Volume Changes substrate 304, it is enough to be realized between image sensor chip 302 and Volume Changes substrate 304 Adhesion strength.The surface treatment can include such as corona treatment, acid or alkali cleaning, and/or interface surface processing, all Such as such as silane adhesion promoters.
In some example embodiments, producer can be placed Volume Changes substrate 304 to image by depositing operation On sensor chip 302.Producer can use any number of deposition technique, such as spin coating, vapour deposition, sputtering etc. Deng.In some embodiments, producer can be before the material for Volume Changes substrate 304 be deposited to boundary layer Boundary layer 310 (such as by deposition, stacking or bonding) is placed to image sensor chip 302.In other embodiment In, boundary layer is not necessarily included in configuration 300 so as to obtain the direct contact image sensor chip 302 of Volume Changes substrate 304. In this case, Volume Changes substrate 304 can be deposited directly to image sensor chip 302.
Producer can be based at least partially on the chemical composition and chemical reaction type of material and select to be used for volume change Change the material of substrate 304.For example, a class material can be subjected to hydrogen-based expansion reaction.Many metals can be in specified pressure and temperature Hydrogen is absorbed under the conditions of degree.Candidate material for hydrogen-expansion includes such as titanium, vanadium, palladium and its alloy, and LaNi5Based alloy. These materials by receive a large amount of hydrogen and volumetric expansion.For example, depending, at least partially, on material and hydrogen insertion condition (such as material Material is exposed to the pressure and/or temperature of hydrogen), Volume Changes substrate 304 can be with the 1% of volumetric expansion about material initial volume To 30%.
In some particular examples, the titanium foil for being bonded to image sensor chip 302 can be exposed to hydrogen by producer. Obtained hydrogenation can be expressed as Ti+H2→TiH2.Titanium (or other metals) can be subjected to the reaction, and it can be in room temperature Heat release under (hydrogen) atmospheric pressure.However, the temperature and/or pressure of lifting can accelerate reaction.In any case, should Reaction can from about a few minutes until in the about time span of a few hours or more generation, depend, at least partially, on temperature, Pressure, the concentration of swelling agent, surface condition of material 304 of stereomutation etc..
In some embodiments, producer can pre-process the material 304 of stereomutation make it that expansion will be exposed to The surface of the material 304 of the stereomutation of agent (such as hydrogen) is in the relatively good condition for being used for being subjected to hydrogenation.It is right In specific example, activation process can include the material for baking and banking up with earth stereomutation at a temperature of about 200 degrees Celsius in a vacuum Surface oxide layer on 304 material 304 to remove stereomutation.
In some embodiments, producer need not allow complete hydrogenation.For example, producer can be with executable portion Hydrogenation as the swell increment of the material 304 for controlling stereomutation technology.For some specific examples, substantially Complete hydrogenation can cause the volumetric expansion of material 304 about 30% of stereomutation.On the other hand, part hydrogenation can For realizing with the volumetric expansion of the material 304 of the stereomutation of any amount between 0% and 30%.
The substrate 304 of stereomutation can include that a class material of volumetric expansion can be subjected to by oxidation reaction.Example Such as, the material of such as aluminium and titanium can be aoxidized by the way that electrochemical potential is applied to material, causes volumetric expansion.Closed for aluminium Gold, the oxidation is similar to anodization or same.The amount of expansion can apply to oxygen at least partially through control Change material voltage and/or electric current and it is controllable.
Volume Changes substrate 304 can include that the another kind of material of volumetric expansion can be subjected to by chemically reacting with lithium Material.The chemical reaction of this and lithium can be referred to as " lithiumation ".Candidate material for lithiumation includes silicon, germanium, tin, indium, metal oxidation Thing (such as vanadium oxide) and metal phosphate (such as ferric phosphate).Lithiumation can use such as butyl lithium or lithium metal and hold OK.In some embodiments, producer can at least in part be controlled swollen by adjusting the amount and/or concentration of lithium reactant Swollen amount.In other embodiments, producer can at least in part be controlled by adjusting electrochemical potential during lithiumation The amount of expansion.For example, depending, at least partially, on material and lithiumation condition, Volume Changes substrate 304 can be with volumetric expansion about material Expect the 1% to 300% of initial volume.
Volume Changes substrate 304 can include can be by hydration or solvation and the another class material for being subjected to volumetric expansion Material.Candidate material for hydration or solvation includes some polymer and elastomer, such as butyl rubber.These and appoint The material of the what stereomutation of his class can be used for substrate.
Fig. 4 is the image sensor chip 402 for including bending, the Volume Changes substrate 404 according to various example embodiments With the side view of the system 400 of reaction vessel 406.For example, in Volume Changes substrate 404, (it can be from Volume Changes substrate 304 Volumetric expansion) volumetric expansion after, the image sensor chip 402 of bending can be passed with the flat image shown in Fig. 3 Sensor chip 302 is same or like.For example, Volume Changes substrate 304 is distributed with first thickness, and Volume Changes substrate 404 have the second thickness distribution for being different from first thickness distribution.Reaction vessel 406 can accommodate multiple bendings with sufficiently large Image sensor chip 402 can simultaneously shape for batch processing, wherein image sensor chip.
The volumetric expansion of Volume Changes substrate 404 can produce the area non-uniform throughout image sensor chip 402 The power 408 of effect.Therefore, power 408 causes bending stress, its image sensor chip 402 can be deformed into needed for sphere, Aspherical or other shapes.Especially, when the remainder deformation of image sensor chip 402, photo sensitive area 410 can be with Deformation.
By Volume Changes substrate 404 volumetric expansion induce bending shape and amount can at least in part by it is many because Element control.For example, the amount that swelling agent is inserted into Volume Changes substrate 404 can influence the amount of volumetric expansion.The amount of the insertion Many technological parameters can be depended, at least partially, on, involved temperature, pressure and voltage such as in technique.For another One example, the thickness distribution of Volume Changes substrate 404 (or Volume Changes substrate 304) can influence Volume Changes substrate 404 The amount of volumetric expansion, and be discussed below.In another example, mask and/or electrode pattern can influence Volume Changes to serve as a contrast The amount of the volumetric expansion at bottom 404.The absorption of swelling agent can be prevented or reduce by sheltering the specific region of Volume Changes substrate 404, Therefore eliminate or reduce the local curvature for expanding and reducing image sensor chip 402 of Volume Changes substrate 404.Class As, by the way that electrode is positioned in the specific region of Volume Changes substrate 404, the expansion reaction of electrochemistry driving can be by about Beam to Volume Changes substrate 404 desired regional area.The shape of the bending induced by the volumetric expansion of Volume Changes substrate 404 The material that shape and amount can also change substrate 404 at least partially through restricted volume is deposited to image sensor chip 402 Specific region and control.
Reaction vessel 406 is not necessarily used for causing some of volumetric expansion chemically or physically to react.However, for other chemistry Or physical reactions, reaction vessel 406 can various pressure and/or at a temperature of include one or more swelling agents.For example, reaction Container 406 can include pump or pressurization gas container with valve (not shown), to provide controlled in reaction vessel 406 Pressure.In another example, reaction vessel can include heating element heater (not shown), to control temperature in reaction vessel 406. In some embodiments, reaction vessel 406 can include sensor 412, be bent with monitoring expansion rate and/or sensor.Should Sensor can include the figure for focusing on one or more bendings for being subjected to being induced by the volumetric expansion of Volume Changes substrate 404 As the camera on sensor chip 402.In another example, camera can be focused on Volume Changes substrate 404.Human manipulation Person can change the volume and/or imaging sensor of substrate 404 by observing the monitored volumes as the image produced by the camera The bending of chip 402.Machine vision can be changed alternatively for the digital picture of the camera is analyzed with automatically monitored volumes The volume of substrate 404 and/or the bending of image sensor chip 402.In another example, sensor 412 can include placing The deformeter changed in designated volume on substrate and/or specific image sensor chip.For example, deformeter (its with attachment Image sensor chip may be allow unavailable) the designated volume change substrate and/or specific image sensor chip be Sacrifice sample in batch processing among multiple images sensor chip 402.For measure image sensor chip 402 and/or The method of deflection and/or the bending of Volume Changes substrate 404 can be used for forming process being limited to desired swell increment.Example Such as, many insertions and expansion reaction can be controlled (for example such as to reduce reaction vessel 406 to stop expansion on demand by state-variable Middle temperature, pressure or voltage).
In some embodiments for being related to hydrogen reaction, reaction vessel 406 can include adjuster (not shown) to control The stress level of hydrogen.Producer can improve the temperature of hydrogen in reaction vessel 406 under constant pressure.Under this condition, Hydrogen can be migrated into Volume Changes substrate 404, caused expansion reaction and induced the bending of image sensering device 402.
In some embodiments of chemical reaction are related to, swelling agent can be exposed to (for example by Volume Changes substrate 404 Butyl lithium) speed and concentration and control swelling agent to be inserted into the speed and amount of Volume Changes substrate 404 (it is true at least in part Determine the amount of volumetric expansion).
In some embodiments of electrochemical treatments are related to, reaction vessel can include electrolyte (solid-state or liquid), The a pair of electrodes contacted with Volume Changes substrate 404 and swelling agent source (such as inserting agent (such as in solution Li from Son)).Environment can be controlled in reaction vessel 406 to help prevent the reaction between Li and water or oxygen.In addition, reaction vessel can So that including power supply (such as voltage source or current source), it can provide the voltage or electric current of precise volume to control ion to be inserted into body In product change substrate 404.
In some exemplary embodiments, before, during or after the volumetric expansion of Volume Changes substrate 404, manufacture Person can apply one or more power to the configuration of image sensor chip 402 and Volume Changes substrate 404 including bending 414, with force the shape of image sensor chip 402 of bending show shaping dies 418 profiled surface 416 shape. In other words, producer can will configure 414 and press together to cause the image sensor chip of bending with shaping dies 418 402 are deformed into the shape of profiled surface 416.Shaping dies 418 can help the volumetric expansion due to Volume Changes substrate 404 and Caused deformation equably occurs.Generally, under the relatively large level of the bending of induction, it may occur however that unstability, wherein Thin walled shell returns back to cylinder (such as single shaft) bending opposite with ball-type bending.In order to prevent the unstability, including conformality The shaping dies 418 on surface can be placed adjacent to photo sensitive area 410.
Fig. 5 is to include the image sensor chip 502 and Volume Changes substrate 504 of shaping according to various example embodiments Sensor assembly 500 side view.Sensor assembly 500 can be same or similar with configuration 414 shown in Fig. 4.Shaping Image sensor chip 502 can be sphere, parabola, compound shape aspherical or with one or more flex points, only Enumerate several examples.The image sensor chip 502 of shaping includes photosensitive part 506.Sensor assembly 500 can be independent light Device is learned, it can be included in such as optical system.Especially, producer can build sensor assembly 500 and will sensing Device module 500 is provided to assembler (it can be and producer's identical entity).Assembler can use sensor assembly 500 As imaging sensor, it can be included in optical system.
Fig. 6 is concentrically changed around the central area of Volume Changes substrate according to having for many example embodiments The top view of the Volume Changes substrate 600 of thickness.The thickness of Volume Changes substrate 600 can change to influence in a particular manner It is attached and (for example engages or bond) curved shape of the image sensor chip (not shown in Fig. 6) to Volume Changes substrate 600. Isopleth 602 represents the line of constant thickness.Spacing between adjacent isopleth 602 can change, and indicate the thickness of change.Example Such as, the isopleth 602 of spaced relative close indicates on relatively short distance the radially thickness (as indicated by R) It is quick to change.Homocentric isopleth 602 indicates that the thickness of Volume Changes substrate 600 radially symmetrically changes.Therefore, make The person of making can be used with the Volume Changes substrate 600 of thickness changed in such a manner for by image sensor chip shape As spherical (such as with mutually equidistant isopleth with one heart), aspherical or paraboloidal (such as with unequal spacing Concentric isopleth) or more complicated shape (such as non-concentric isopleth with unequal spacing).
Fig. 7 and Fig. 8 are the shapes for the photosensitive part for showing the curved images sensor chip according to various example embodiments The sectional view of shape.In the figure 7, the photosensitive part 700 of curved images sensor chip 702 has sphere or aspherical shape.Should Shape does not have flex point.Photosensitive part 700 is indent.On the other hand, as shown in Figure 8, curved images sensor chip 802 Photosensitive part 800 have include the complicated shape of one or more flex points.The a part of of photosensitive part 800 can include sphere Or aspherical shape.The complicated shape can be used for many optical systems.All Volume Changes substrates as described above can be with The power and/or torque Combination Design applied is to produce the complicated shape of photosensitive part 800.
Fig. 9 is to show the curved images sensor for being attached to Volume Changes substrate 902 according to various example embodiments The sectional view of the bending of chip 900.Curved images sensor chip is bonded to the combination of Volume Changes substrate, and can include can be with Then include the Individual optical device into optical system.The optical axis 904 of the optical system is relative to image sensor chip 900 And show.The size and volume of Volume Changes substrate can be for the typical environmental condition of optical system (such as room temperatures, air Pressure) under or lack swelling agent and keep constant (such as many decades or more long).For example, causing Volume Changes substrate 902 The hydrogenation of volumetric expansion can be heat release.Therefore, the substrate of volumetric expansion can be relative chemical and physically stable.
When image sensor chip 900 is included in optical system, image sensor chip 900 is based at least partially on The focal length of image sensor chip 900 of curved shape can be important factor.When the shape of image sensor chip 900 Substantially sphere when, the focal length of image sensor chip 900 can be at least approximately equal to the song of image sensor chip 900 Rate radius R inverse.If image sensor chip 900 has aspherical shape, the curvature half of image sensor chip 900 Footpath changes with the distance from optical axis 904.The optical system including image sensor chip 900 can be designed to be adapted to this Variable radius of curvature.
Figure 10 is to include the optics of image sensor module 1002 and lens subassembly 1004 according to various example embodiments The sectional view of system 1000.Especially, image sensor module 1002 includes the image sensor chip 1006 and volume of bending Change substrate 1008.The image sensor chip 1006 of bending includes photosensitive part 1010.The image sensor chip of bending 1006 and Volume Changes substrate 1008 can be analogous respectively to or be equal to the image sensor chip of the bending shown in Fig. 3 302 and Volume Changes substrate 304.In some embodiments, Volume Changes substrate 1008 can it is firm enough with maintain bending Image sensor chip 1006 curved shape.
The image sensor chip 1006 (or photosensitive part 1010) of bending can have the shape for causing focal length.When in light The focal length is can contemplate when image sensor module 1002 is placed in system 1000.Especially, lens subassembly 1004 can be by It is designed as receiving light 1012, carry out the light optical manipulation and producing the image sensor chip that image is focused to bending Light output 1014 on 1006, the image sensor chip 1006 of bending can be from the distance 1016 of lens subassembly 1004.Distance The focal length of 1016 image sensor chips 1006 that can at least approximately equal to bend.In some embodiments, bending The inverse of the focal length of image sensor chip 1006 is at least approximately equal to the curvature half of the image sensor chip 1006 of bending Footpath.Lens subassembly 1004 and image sensor module 1002 can be aligned along optical axis 1018.
Figure 11 is the stream for showing the method 1100 for curved images sensor chip according to some example embodiments Cheng Tu.For example, the image sensor chip can be same or like with image sensor chip 302 shown in Fig. 3.Method 1100 Fig. 3 can be similar to the processing shown in Fig. 5 or same, and can be as performed by producer.At block 1102, Producer can place substrate on the first surface of image sensor chip, wherein the first surface of image sensor chip with The second surface of image sensor chip is relative, and wherein the second surface of image sensor chip includes optical sensor with sound Electric signal should be produced in reception light.At block 1104, producer can change the volume of substrate so as to imaging sensor core Piece applying power is to produce the image sensor chip of bending.
Example clause
A. a kind of method, including：Substrate, wherein imaging sensor core are placed on the first surface of image sensor chip The first surface of piece is relative with the second surface of image sensor chip, and the wherein second surface bag of image sensor chip Optical sensor is included to produce electric signal in response to receiving light；And change the volume of substrate to apply image sensor chip Reinforce to produce the image sensor chip of bending.
B. such as the method that clause A is recorded, wherein, the second surface of the imaging sensor of bending has the sphere or non-of indent Spherical shape.
C. such as the method that any one of clause A to B is recorded, wherein, placed on the first surface of image sensor chip Substrate includes：The first surface of image sensor chip is coupled to substrate using boundary layer.
D. such as the method that any one of clause A to C is recorded, wherein, substrate includes metal alloy, and wherein changes substrate Volume include：Substrate is exposed to hydrogen to allow substrate to absorb hydrogen.
E. such as the method that any one of clause A to C is recorded, wherein, substrate includes metal alloy, and wherein changes substrate Volume include：At least a portion of substrate is applied a current to perform oxidation reaction.
F. such as the method that any one of clause A to D is recorded, wherein, metal alloy includes aluminium or titanium.
G. such as the method that any one of clause A to C is recorded, wherein, the volume of modification substrate includes：Substrate is exposed to lithium Lithium base chemicals in chemical industry skill.
H. such as the method that any one of clause A to C is recorded, wherein, substrate includes polymer or elastomer, and wherein repaiies Changing the volume of substrate includes：Substrate is exposed to one or more of hydration-treated or solvation processing chemicals.
I. such as the method that any one of clause A to C is recorded, wherein, the volume of modification substrate includes：By controlled temperature, Pressure or voltage apply to the specific part of substrate.
J. such as the method that any one of clause A to C is recorded, wherein, before the volume of modification substrate, substrate has first Thickness distribution, and wherein after the volume of modification substrate, substrate, which has, is different from the second thickness point that first thickness is distributed Cloth.
K. such as the method that any one of clause A to C is recorded, in addition to：Adjacently put with the second surface of imaging sensor Put shaping dies.
L. a kind of equipment, including：The image sensor chip of bending, it has the first side and relative with the first side second Side, wherein the second side includes optical sensor to produce electric signal in response to receiving light；And substrate, it covers the image of bending First side of sensor chip, wherein substrate include metal hydride.
M. such as the equipment that clause L is recorded, wherein, the second side of the image sensor chip of bending have indent sphere or Aspherical shape.
N. such as the equipment that any one of clause L to M is recorded, wherein, metal hydride includes titantium hydride or Vanadium hydride.
O. such as the equipment that any one of clause L to N is recorded, in addition to boundary layer, it is by substrate coupled to the image bent First side of sensor chip.
P. such as the equipment that any one of clause L to O is recorded, wherein, the image sensor chip of bending is with least approximate Ground with bend image sensor chip the second side focal length equal radius of curvature reciprocal.
Q. a kind of system, including：One or more lens or speculum；The image sensor chip of bending, it has the Side and second side relative with the first side, wherein the second side includes optical sensor with response to from one or more lens or instead Mirror is penetrated to receive light and produce electric signal；And substrate, it covers the first side of the image sensor chip of bending, wherein substrate Including metal hydride.
R. such as the system that clause Q is recorded, wherein, substrate includes preventing substrate from absorbing one or more expansions at least in part The masking regional of chemicals.
S. such as the system that any one of clause Q to R is recorded, wherein, the image sensor chip of bending is with least approximate Ground with bend image sensor chip the second side focal length equal radius of curvature reciprocal.
T. such as the system that any one of clause Q to S is recorded, wherein, image sensor chip includes silicon or germanium.
Conclusion
Although describing theme with the language specific to architectural feature and/or method action, it should be understood that institute The theme limited in attached claim should not necessarily be limited by specific features or the action of description.On the contrary, specific features and step are disclosed It is used as the exemplary forms for implementing claim.
All methods as described above and processing can be embodied in by one or more all-purpose computers or processor Automate completely in performed software code module and via the software code module.Code module can store in office In computer readable medium, computer storage media or other Computer Memory Units of what type.Some or all methods can To be alternatively embodied in dedicated computer hardware (such as quantum computer or Quantum annealing device).
Unless otherwise expressly specified, the conditional language in other language, such as "available", " can with " or " possibility ", should This is understood to that some examples, which are presented, includes some features, element and/or step within a context, and other examples do not include being somebody's turn to do Some features, element and/or step.Therefore, the conditional language should not generally be intended to imply that some features, element and/or step Suddenly in any mode required by one or more examples, or one or more examples necessarily include logic to utilize Or do not utilize user to input or point out to determine whether some features, element and/or step are included in or will be executed at In any particular example.
Unless otherwise expressly specified, the connection language of such as phrase " in X, Y or Z at least one " should be understood that Presentation project, term etc., it can be X, Y or Z, or its combination.
Any customary description, element or block in the flow chart described in described herein and/or accompanying drawing should be appreciated that Potentially to represent to include to be used for implement one or more executable instructions of element in specific logic function or routine A part for module, code segment or code.Alternative embodiment is included in the range of example described herein, wherein can be with Element or function are deleted, or other are sequentially performed in addition to shown or discuss, including it is substantially simultaneously or opposite suitable Sequence, depending on involved function as understood by those skilled in the art.
It should be emphasized that many changes and modifications can be made to above-mentioned example, its key element is construed as can at other Receive among example.All such modifications and changes are intended to be included in the scope of the present disclosure and protected by appended claims Shield.

Claims (15)

1. a kind of method, including：
Substrate, the wherein first surface of described image sensor chip and institute are placed on the first surface of image sensor chip The second surface for stating image sensor chip is relative, and wherein the second surface of described image sensor chip includes light sensing Device with response to receive light and produce electric signal；And
The volume of the substrate is changed to produce described image sensor chip applying power in the imaging sensor core of bending Piece.
2. according to the method described in claim 1, wherein the substrate includes metal alloy, and wherein change the substrate Volume includes：
The substrate is exposed to hydrogen to allow the substrate to absorb the hydrogen.
3. according to the method described in claim 1, wherein the substrate includes metal alloy, and wherein change the substrate Volume includes：
At least a portion of the substrate is applied a current to perform oxidation reaction.
4. method according to claim 3, wherein the metal alloy includes aluminium or titanium.
5. according to the method described in claim 1, wherein changing the volume of the substrate includes：
Lithium base chemicals during the substrate is handled exposed to lithiumation.
6. according to the method described in claim 1, wherein the substrate includes polymer or elastomer, and wherein change described The volume of substrate includes：
The substrate is exposed to one or more of hydration-treated or solvation processing chemicals.
7. according to the method described in claim 1, wherein changing the volume of the substrate includes：
Controlled temperature, pressure or voltage are applied to the specific part of the substrate.
8. according to the method described in claim 1, wherein before the volume of the substrate is changed, the substrate has the first thickness Degree distribution, and wherein after the volume of the substrate is changed, the substrate, which has, is different from what the first thickness was distributed Second thickness is distributed.
9. according to the method described in claim 1, in addition to：
It is adjacent to placement shaping dies with the second surface of described image sensor.
10. a kind of equipment, including：
The image sensor chip of bending, it has the first side and second side relative with first side, wherein described the Two sides include optical sensor to produce electric signal in response to receiving light；And
Substrate, it covers the first side of the image sensor chip of the bending, wherein the substrate includes metal hydride.
11. equipment according to claim 10, wherein the second side of the image sensor chip of the bending has indent Sphere or aspherical shape.
12. equipment according to claim 10, wherein the metal hydride includes titantium hydride or Vanadium hydride.
13. equipment according to claim 10, wherein the image sensor chip of the bending has at least approximately and institute State the equal radius of curvature reciprocal of the focal length of the second side of the image sensor chip of bending.
14. a kind of system, including：
One or more lens or speculum；
The image sensor chip of bending, it has the first side and second side relative with first side, wherein described the Two sides include optical sensor to produce electric signal in response to receiving light from one or more of lens or speculum；And
Substrate, it covers the first side of the image sensor chip of the bending, wherein the substrate includes metal hydride.
15. system according to claim 14, wherein the substrate includes preventing the substrate from absorbing one at least in part The masking regional of individual or multiple expanding chemical product.
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