CN107068858A - Phase-change material, gate driver part for gate driver part and preparation method thereof - Google Patents
Phase-change material, gate driver part for gate driver part and preparation method thereof Download PDFInfo
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- 239000012782 phase change material Substances 0.000 title claims abstract description 103
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 230000009466 transformation Effects 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- 229910052711 selenium Inorganic materials 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910052714 tellurium Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
- 238000003860 storage Methods 0.000 abstract description 23
- 230000015654 memory Effects 0.000 abstract description 17
- 229910052785 arsenic Inorganic materials 0.000 abstract description 15
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000011669 selenium Substances 0.000 description 20
- 230000007704 transition Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910005866 GeSe Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910005900 GeTe Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
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- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
The present invention provides a kind of phase-change material for gate driver part, gate driver part and preparation method thereof, and the formula for the phase-change material of gate driver part is：Y1‑xAsx, wherein, Y is to include the phase-change material of at least one 6th major element, 0 ＜ x≤0.3.The phase-change material for gate driver part of the present invention can form conductive channel by the arsenic doped atom in phase-change material in phase-change material, so that the current density after improving the phase transformation critical voltage of phase-change material and opening；When the phase-change material is used for gate driver part, realized and opened and closed using the OTS switching characteristics of phase-change material, simultaneously in gate driver part opening, the conductive channel of the atom doped formation of arsenic can provide big driving current, for driving the phase transformation of phase-change memory cell to realize the storage and erasing of information；Can be realized using the gate driver part of the phase-change material it is three-dimensionally integrated, so as to greatly improve the integrated level and storage density of memory.
Description
Technical field
The invention belongs to microelectronics technology, more particularly to a kind of phase-change material for gate driver part, choosing
Logical driving element and preparation method thereof.
Background technology
Phase change memory technology is can based on the Ovshinsky phase-change thin films proposed at beginning of the seventies late 1960s
Set up with the conception applied to phase change memory medium, be a kind of stable memory device of cheap, performance.Phase transformation is deposited
Reservoir can be made in silicon wafer substrate, its critical material be recordable phase-change thin film, heating electrode material, heat-insulating material and
Extraction electrode material etc..The general principle of phase transition storage is to be acted on using electric impulse signal on device cell, makes phase transformation material
Reversible transition occurs between amorphous state and polycrystalline state for material, can by differentiating low-resistance when high resistant and the polycrystalline state during amorphous state
To realize the write-in, erasing and read operation of information.
Phase transition storage is due to small, low in energy consumption, anti-with reading, high erasable number of times, non-volatile, component size at a high speed
The advantages of strong motion and radioresistance, thought most possibly to replace current flash memories to form by International Semiconductor Industry Association
Turn into the device of commercial product for future memory main product and at first.
Direction of the research of memory always towards high speed, high density, low-power consumption, high reliability is developed.At present in the world
The major company that most of mechanism of phase transition storage R＆D work is semicon industry is engaged in, they concentrate on focus of attention
How the high density of phase transition storage is realized, wherein three-dimensional storage is exactly one of most effective, most promising approach.Ying Te
You have prepared the phase-change material gating driving switch of achievable three-dimensional storage, and and phase transformation using the OTS characteristics of phase-change material
Material organic integration, develops two layers of storage chip, and capacity reaches 128Gb, is current phase transition storage peak capacity, is expected to
Applied in the fields such as SSD.
Two typical characteristics of phase-change material are switching characteristic (OTS) and storage characteristics (OMS), as shown in figure 1, in phase transformation
Apply electric current on material, as electric current increases, voltage quickly increases, when voltage is increased to Vth (phase transformation critical voltage), if
Revocation applies electric current on top of the phase change material, and voltage is also gradually reduced and disappeared, and now phase-change material is not undergone phase transition, and it hinders
Value is restored to initial state, and the phase change material properties in this stage are exactly OTS characteristics, that is to say, that apply curtage in phase
Become after material, certain electric current will be produced, turned on, realize open function, and after cancelling after curtage, phase-change material
Initial high-impedance state is returned to, closing function is realized.If continue to increase curtage, and more than Vth, then phase-change material
On voltage will occur unexpected reduction, illustrate that now phase-change material has been undergone phase transition, is crystalline state by amorphous state, resistance is big
Amplitude reduction, so as to cause the voltage rapid decrease on phase-change material, direct ratio is presented with voltage in electric current afterwards substantially, now
Phase-change material resistance is no longer varied widely, and this process is referred to as the storage characteristics of phase-change material, i.e. OMS characteristics, due to
The structure change of phase-change material is had occurred and that, electric current is now cancelled, the resistance of phase-change material can not return to initial high-impedance state,
But low resistance state is remain, phase transition storage also exactly realizes information using the two high-impedance states and low resistance state of phase-change material
Store function.Said process is also referred to as SET processes, and corresponding current is SET current, that is, realizes the electric current of phase-change material crystallization.Such as
Fruit puts on one larger current of phase-change material, melts it, then quickly removes electric current, phase-change material is quickly cooled down, weight
High-impedance state newly is returned to, this process is referred to as RESET processes, corresponding current is RESET electric currents, that is, realizes the decrystallized of phase-change material
Electric current.The change of phase-change material Resistance states can be read out by applying a small voltage, to judge storage state, this
Process is referred to as reading process, and corresponding voltage is VRead。
Traditional phase-change material is when in the OTS stages, and its electric current is very small, generally a few to tens of microamperes, so low
Electric current as gating driving switch be current requirements needed for can not meeting the phase transformation of memory cell phase-change material, therefore, it is necessary to
Increase substantially the current density in OTS stages, at least up to hundred microamperes magnitudes；Meanwhile, as shown in Fig. 2 being used as OTS phase transformation material
Material, its phase transformation critical voltage Vth2Also require, that is, must be considerably larger than the V of memory cell phase-change materialth1(generally 1.0-1.5V
Left and right), only in this way, it just when OTS is opened, can both meet the amorphous of OMS phase-change materials and the reversible transition process (O of crystalline state
→ A → B → C → O) require, will not undergo phase transition OTS phase-change materials again, remain in the OTS stages (O → D → O, less than
Up to E and F).Therefore, there is phase transformation critical voltage V in existing phase-change materialthRelatively low and after opening current density is very small to ask
Topic.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of for gate driver part
Phase-change material, gate driver part and preparation method thereof, the phase transformation for solving phase-change material presence of the prior art are critical
Voltage it is relatively low and open after current density it is very small the problem of.
In order to achieve the above objects and other related objects, the present invention provides a kind of phase transformation material for gate driver part
Expect, the formula of the phase-change material for gate driver part is：Y1-xAsx, wherein, Y is to include at least one 6th main group
The phase-change material of element, 0 ＜ x≤0.3.
It is used as a kind of preferred scheme of the phase-change material for gate driver part of the present invention, 0.1≤x≤0.2.
As a kind of preferred scheme of the phase-change material for gate driver part of the present invention, Y formula is：A1- yByCz, wherein, A is selected from least one 6th major element, and B is selected from least one 4th major element, and C is N or P, wherein, 0
≤ y≤0.5,0≤z≤1.
As a kind of preferred scheme of the phase-change material for gate driver part of the present invention, A is selected from Se and/or Te.
It is used as a kind of preferred scheme of the phase-change material for gate driver part of the present invention, when A is selected from Se and Te, 1:
10≤Se:Te≤10:1。
As a kind of preferred scheme of the phase-change material for gate driver part of the present invention, B is selected from Si and/or Ge.
It is used as a kind of preferred scheme of the phase-change material for gate driver part of the present invention, when B is selected from Si and Ge, 1:
10≤Si:Ge≤10:1。
As the present invention the phase-change material for gate driver part a kind of preferred scheme, Y include Ge, Te and
Si, or including Ge, Te, N and Si, or including Si and Te, or including Si, Te and N, or including Ge, Se and Si, or including Ge, Se,
N and Si.
The present invention also provides a kind of system of the phase-change material for gate driver part as described in above-mentioned either a program
Preparation Method, using ion implantation, sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition
Method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atom
Layer sedimentation prepares the phase-change material for gate driver part as described in above-mentioned either a program.
The present invention also provides a kind of gate driver part, and the gate driver part is included as described in above-mentioned either a program
Phase-change material.
As described above, the present invention for the phase-change material of gate driver part, gate driver part and preparation method thereof,
Have the advantages that：The phase-change material for gate driver part of the present invention passes through the arsenic doped in phase-change material
Atom, can form conductive channel in phase-change material, so that the electricity after improving the phase transformation critical voltage of phase-change material and opening
Current density；When the phase-change material is used for gate driver part, is realized using the OTS switching characteristics of phase-change material and open and close
Close, while in gate driver part opening, the conductive channel of the atom doped formation of arsenic can provide big driving current, use
In driving phase-change memory cell phase transformation to realize the storage and erasing of information；Use the gate driver part of the phase-change material
Can realize it is three-dimensionally integrated, so as to greatly improve the integrated level and storage density of memory.
Brief description of the drawings
Fig. 1 is shown as the switching characteristic (OTS) and storage characteristics (OMS) of phase-change material.
Fig. 2 is shown as the phase transformation critical voltage relation schematic diagram for OTS and OMS phase-change material.
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It should be noted that the diagram provided in the present embodiment only illustrates the basic conception of the present invention in a schematic way,
Though only display is painted with relevant component in the present invention rather than according to component count, shape and the size during actual implementation in diagram
System, it is actual when implementing, and form, quantity and the ratio of each component can be a kind of random change, and its assembly layout form also may be used
Can be increasingly complex.Embodiment one
The present invention provides a kind of phase-change material for gate driver part, the phase transformation material for gate driver part
The formula of material is：Y1-xAsx, wherein, Y is to include the phase-change material of at least one 6th major element, 0 ＜ x≤0.3.
As an example, x value can elect 0.05,0.1,0.15,0.2,0.25 or 0.3 as according to actual needs, preferably
In ground, the present embodiment, 0.1≤x≤0.2.
As an example, Y formula is：A1-yByCz, wherein, A is selected from least one 6th major element, and B is selected from least one
The 4th major element is planted, C is N (nitrogen) or P (phosphorus), wherein, 0≤y≤0.5,0≤z≤1.
As an example, y value can be 0.1,0.2,0.3,0.4 or 0.5, z value can be 0.1,0.2,0.3,
0.4th, 0.5,0.6,0.7,0.8,0.9 or 1.
In one example, A can be Se (selenium) or Te (tellurium).
In another example, A can be Se and Te.Se and Te atomic ratio can be elected as according to actual needs：1:10≤
Se:Te≤10:1, it is preferable that 1:9≤Se:Te≤9:1, it is preferable that 1:8≤Se:Te≤8:1, it is preferable that 1:7≤Se:Te≤
7:1, it is preferable that 1:6≤Se:Te≤6:1, it is preferable that 1:5≤Se:Te≤5:1, it is preferable that 1:4≤Se:Te≤4:1, preferably
Ground, 1:3≤Se:Te≤3:1, it is preferable that 1:2≤Se:Te≤2:1.
In one example, B can be Si (silicon) or Ge (germanium).
In another example, B can be Si and Ge.Si and Ge atomic ratio can be elected as according to actual needs：1:10≤
Si:Ge≤10:1, it is preferable that 1:9≤Si:Ge≤9:1, it is preferable that 1:8≤Si:Ge≤8:1, it is preferable that 1:7≤Si:Ge≤
7:1, it is preferable that 1:6≤Si:Ge≤6:1, it is preferable that 1:5≤Si:Ge≤5:1, it is preferable that 1:4≤Si:Ge≤4:1, preferably
Ground, 1:3≤Si:Ge≤3:1, it is preferable that 1:2≤Si:Ge≤2:1.
As an example, Ge, Te and Si can be included in Y, Ge, Te, N and Si can also be included, Si and Te can also be included,
Si, Te and N can also be included, Ge, Se and Si can also be included, Ge, Se, N and Si can also be included.
The phase-change material for gate driver part of the present invention, can be with by the arsenic doped atom in phase-change material
Conductive channel is formed in phase-change material, thus improve the phase transformation critical voltage of phase-change material compared with and current density after opening；
When the phase-change material is used for gate driver part, is realized and opened and closed using the OTS switching characteristics of phase-change material, simultaneously
In gate driver part opening, the conductive channel of the atom doped formation of arsenic can provide big driving current, for driving
The phase transformation of phase-change memory cell is to realize the storage and erasing of information；Can be real using the gate driver part of the phase-change material
It is existing three-dimensionally integrated, so as to greatly improve the integrated level and storage density of memory.
Embodiment two
The present invention also provides a kind of preparation method of the phase-change material for gate driver part, and the preparation method is suitable to
Prepare embodiment one described in the phase-change material for gate driver part, specifically, using ion implantation, sputtering method,
Evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metal compound
At least one of thing vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or atomic layer deposition method method is prepared such as
The phase-change material for gate driver part described in embodiment one.
, can be with as an example, exemplified by preparing the phase-change material for gate driver part using magnetron sputtering method
Using GeTe alloys targets, Si targets and As target co-sputterings to obtain including Ge, Te, Si and As phase-change material；It can use
N is passed through while GeTeSi alloys targets, Si targets and As target co-sputterings2(nitrogen), to obtain including Ge, Te, N, Si and As phase
Become material；Si targets, Te targets and As target co-sputterings can be used to obtain including Si, Te and As phase-change material；Si can be used
N is passed through while target, Te targets and As target co-sputterings2, to obtain including Si, Te, N and As phase-change material；GeSe can be used
The phase-change material to obtain including Ge, Te, Si and As of alloys target, Si targets and As target co-sputterings；GeSe alloys can also be used
N is passed through while target, Si targets and As target co-sputterings2, to obtain including Ge, Te, N, Si and As phase-change material.
Embodiment three
The present invention also provides a kind of gate driver part, and the gate driver part includes the phase as described in embodiment one
Become material.The gate driver part realized using the OTS switching characteristics of phase-change material as described in embodiment one open with
Close, while in gate driver part opening, the conductive channel of the atom doped formation of arsenic can provide big driving current,
For driving the phase transformation of phase-change memory cell to realize the storage and erasing of information；Use the gate driver of the phase-change material
Part can realize it is three-dimensionally integrated, so as to greatly improve the integrated level and storage density of memory.
In summary, the present invention provides a kind of phase-change material, gate driver part and its system for gate driver part
Preparation Method, the formula of the phase-change material for gate driver part is：Y1-xAsx, wherein, Y is to include at least one the 6th
The phase-change material of major element, 0 ＜ x≤0.3.The phase-change material for gate driver part of the present invention passes through in phase transformation
Arsenic doped atom in material, can form conductive channel in phase-change material, so as to improve the phase transformation critical voltage of phase-change material
And the current density after opening；When the phase-change material is used for gate driver part, the OTS switching characteristics of phase-change material are utilized
Realize and open and close, while in gate driver part opening, the conductive channel of the atom doped formation of arsenic can be provided greatly
Driving current, for driving the phase transformation of phase-change memory cell to realize the storage and erasing of information；Use the phase-change material
Gate driver part can realize it is three-dimensionally integrated, so as to greatly improve the integrated level and storage density of memory.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of phase-change material for gate driver part, it is characterised in that the phase transformation material for gate driver part
The formula of material is：Y1-xAsx, wherein, Y is to include the phase-change material of at least one 6th major element, 0 ＜ x≤0.3.
2. the phase-change material according to claim 1 for gate driver part, it is characterised in that：0.1≤x≤0.2.
3. the phase-change material according to claim 1 for gate driver part, it is characterised in that：Y formula is：A1- yByCz, wherein, A is selected from least one 6th major element, and B is selected from least one 4th major element, and C is N or P, wherein, 0
≤ y≤0.5,0≤z≤1.
4. the phase-change material according to claim 3 for gate driver part, it is characterised in that：A be selected from Se and/or
Te。
5. the phase-change material according to claim 4 for gate driver part, it is characterised in that：When A is selected from Se and Te,
1:10≤Se:Te≤10:1。
6. the phase-change material according to claim 3 for gate driver part, it is characterised in that：B be selected from Si and/or
Ge。
7. the phase-change material according to claim 6 for gate driver part, it is characterised in that：When B is selected from Si and Ge,
1:10≤Si:Ge≤10:1。
8. the phase-change material according to claim 3 for gate driver part, it is characterised in that：Y include Ge, Te and
Si, or including Ge, Te, N and Si, or including Si and Te, or including Si, Te and N, or including Ge, Se and Si, or including Ge, Se,
N and Si.
9. a kind of preparation method for the phase-change material for being used for gate driver part such as any one of claim 1 to 8, its feature exists
In using ion implantation, sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, low
Pressure chemical vapor deposition method, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method or ald
Method prepares the phase-change material for gate driver part as any one of claim 1 to 8.
10. a kind of gate driver part, it is characterised in that the gate driver part is included such as any one of claim 1 to 8
Described phase-change material.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108963073A (en) * | 2018-06-27 | 2018-12-07 | 中国科学院上海微系统与信息技术研究所 | Ge-Se-O ovonic threshold switch (OTS) material, gate unit and preparation method |
| CN109545964A (en) * | 2018-12-14 | 2019-03-29 | 中国科学院上海微系统与信息技术研究所 | A kind of gating material based on oxide ion injection, gate unit and preparation method thereof |
| CN110197837A (en) * | 2018-02-27 | 2019-09-03 | 台湾积体电路制造股份有限公司 | Semiconductor storage unit and its manufacturing method including phase-change material layers |
| CN110707209A (en) * | 2019-09-03 | 2020-01-17 | 华中科技大学 | Three-dimensional stacked phase change memory and preparation method thereof |
| CN111326651A (en) * | 2018-12-17 | 2020-06-23 | 中国科学院上海微系统与信息技术研究所 | OTS material, gating unit and preparation method thereof |
| CN111463346A (en) * | 2020-03-26 | 2020-07-28 | 中国科学院上海微系统与信息技术研究所 | OTS gating material, OTS gating unit, preparation method of OTS gating unit and memory |
| CN113795924A (en) * | 2021-07-28 | 2021-12-14 | 长江先进存储产业创新中心有限责任公司 | Phase change memory device having a selector including a defect reducing material and method of forming the same |
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| CN110197837A (en) * | 2018-02-27 | 2019-09-03 | 台湾积体电路制造股份有限公司 | Semiconductor storage unit and its manufacturing method including phase-change material layers |
| US11563056B2 (en) | 2018-02-27 | 2023-01-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memory device including phase change material layers and method for manufacturing thereof |
| CN108963073A (en) * | 2018-06-27 | 2018-12-07 | 中国科学院上海微系统与信息技术研究所 | Ge-Se-O ovonic threshold switch (OTS) material, gate unit and preparation method |
| CN109545964A (en) * | 2018-12-14 | 2019-03-29 | 中国科学院上海微系统与信息技术研究所 | A kind of gating material based on oxide ion injection, gate unit and preparation method thereof |
| CN111326651A (en) * | 2018-12-17 | 2020-06-23 | 中国科学院上海微系统与信息技术研究所 | OTS material, gating unit and preparation method thereof |
| CN110707209A (en) * | 2019-09-03 | 2020-01-17 | 华中科技大学 | Three-dimensional stacked phase change memory and preparation method thereof |
| WO2021042422A1 (en) * | 2019-09-03 | 2021-03-11 | 华中科技大学 | Three-dimensional stacked phase change memory and preparation method therefor |
| CN110707209B (en) * | 2019-09-03 | 2022-03-18 | 华中科技大学 | Three-dimensional stacked phase change memory and preparation method thereof |
| US11678495B2 (en) | 2019-09-03 | 2023-06-13 | Huazhong University Of Science And Technology | Three-dimensional stacked phase change memory and preparation method thereof |
| CN111463346A (en) * | 2020-03-26 | 2020-07-28 | 中国科学院上海微系统与信息技术研究所 | OTS gating material, OTS gating unit, preparation method of OTS gating unit and memory |
| CN111463346B (en) * | 2020-03-26 | 2023-03-21 | 中国科学院上海微系统与信息技术研究所 | OTS gating material, OTS gating unit, preparation method of OTS gating unit and memory |
| CN113795924A (en) * | 2021-07-28 | 2021-12-14 | 长江先进存储产业创新中心有限责任公司 | Phase change memory device having a selector including a defect reducing material and method of forming the same |
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