CN107068818B - Epitaxial structure of AlInGaN-based green and yellow light-emitting diode - Google Patents
Epitaxial structure of AlInGaN-based green and yellow light-emitting diode Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 63
- 230000012010 growth Effects 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000002096 quantum dot Substances 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 238000003475 lamination Methods 0.000 claims abstract description 3
- 238000002360 preparation method Methods 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 10
- 230000000737 periodic effect Effects 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract description 13
- 239000007924 injection Substances 0.000 abstract description 13
- 238000005457 optimization Methods 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 description 16
- 230000001965 increasing effect Effects 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses an epitaxial structure of an AlInGaN-based green and yellow LED, which comprises: a substrate for material growth; the AlInGaN-based semiconductor lamination layer is laminated on the substrate and at least comprises an N-type layer, a P-type layer and an AlInGaN multi-quantum well sandwiched between the N-type layer and the P-type layer, and is characterized in that: v pits which are periodically arranged in a growth plane are embedded in the multiple quantum wells, and the sizes of the V pits are the same; the planar quantum well has a quantum-like structure and becomes the main light source of the LED. The invention has the following advantages: 1. the quasi-quantum dot light-emitting structure in the multiple quantum wells reduces the influence of dislocation; 2. the multiple quantum wells are embedded with 'process V pits' which are periodically arranged in a growth plane, so that the hole injection function of the V pits is further enhanced; 3. optimization of the V-pit enhanced hole injection function can be realized, and the luminous efficiency of the LED can be improved.
Description
Technical Field
The invention relates to a semiconductor material, in particular to an epitaxial structure of an AlInGaN-based green and yellow light emitting diode.
Background
The aluminum indium gallium nitride (AlInGaN) based Light Emitting Diode (LED) has wide application, and can be applied to markets of instrument work indication, traffic signal lamps, large screen display, general illumination and the like. Currently, AlInGaN-based LEDs have been successful in blue light, but their luminous efficiency in the longer wavelength bands of green and yellow light is still low. The reason for this is that the In component of InGaN/GaN multiple quantum well In green and yellow LEDs is high. A high In component introduces two disadvantages: 1) the lattice mismatch degree between the well and the barrier is increased, the compressive stress is increased, the piezoelectric polarization effect is increased, and the dislocation is increased; 2) the In component is not easy to be doped, and the growth temperature needs to be reduced, so the In component is easy to segregate, the crystal quality of the quantum well is reduced, and a dark area is generated. These disadvantages all contribute to low luminous efficiency of the LED.
To alleviate the above disadvantages, the general solution is based on the research experience of blue LEDs. Firstly, increasing the In content In the superlattice preparation layer of the green and yellow LED, and properly relieving the compressive stress borne by the quantum well; however, this method has limited effectiveness. And secondly, a V pit is introduced in the growth of the material, so that the luminous efficiency of the LED can be effectively improved. It is known that, due to the use of heteroepitaxy, there is a large difference in lattice constant and thermal expansion coefficient between AlInGaN material and substrate material, and therefore a large number of dislocations are generated when growing multiple quantum wells. Dislocations are non-radiative recombination centers and will become carrier "killers," reducing the luminous efficiency of the LED. However, by controlling the growth process of the pre-well preparation layer, dislocations may induce a V-type defect in the process of penetrating the multiple quantum well. Such a V-shaped defect is actually a pyramid-shaped pit surrounding the dislocation, referred to as a V-pit for short, and has a structure of an inverted hexagonal pyramid as shown in fig. 1. Fig. 2 is a schematic cross-sectional view of an LED epitaxial structure with V-pits. As shown in fig. 2, V pit 4 is nucleated above dislocation 11 in pre-well preparation layer 5 and grows as the growth thickness of pre-well preparation layer 5 increases. And then the grown multiple quantum well 12 grows on the semipolar surface of the side wall of the V pit 4 to form a V pit side wall quantum well 7 and a V pit side wall quantum barrier 8, and the V pit 4 gradually grows. And finally, filling a p-type layer in the hollow V-shaped pit 4 to obtain the LED epitaxial structure with a smooth surface. Research results show that the V-shaped pit 4 can effectively shield the dislocation 11 and reduce the nonradiative recombination probability of carriers on the dislocation 11; in addition, the V pit 4 also has the function of enhancing hole injection, and the problem of insufficient hole concentration in the light emitting process is solved; therefore, the growth of V pit 4 is controlled, and the light emission efficiency of the LED can be significantly improved. However, V pits 4 generated during the growth are induced by dislocations 11, so each V pit 4 grows around a dislocation 11, whose spatial position is determined by the dislocation 11, and is substantially randomly distributed. Such random distribution does not affect the function of V pit 4 to shield dislocation 11, but cannot optimize the function of V pit 4 to enhance hole injection. Therefore, the luminous efficiency of the green and yellow LEDs is still far lower than that of the blue LEDs after the optimization by the method; therefore, it is necessary to design a new epitaxial structure of green and yellow AlInGaN based mqw-well LED to optimize the function of V-pit enhanced hole injection under the condition of eliminating the influence of dislocation, so as to further improve the light emitting efficiency of green and yellow LEDs.
Disclosure of Invention
The invention aims to provide an epitaxial structure of an AlInGaN-based green and yellow light-emitting diode, which has quantum dot-like light-emitting characteristics, can realize optimization of a V pit enhanced hole injection function and can improve the light-emitting efficiency of an LED.
The purpose of the invention is realized as follows:
an epitaxial structure of an AlInGaN-based green and yellow light emitting diode, comprising: a substrate for material growth; the AlInGaN-based semiconductor lamination layer is laminated on the substrate and at least comprises an N-type layer, a P-type layer and an AlInGaN multi-quantum well sandwiched between the N-type layer and the P-type layer, and is characterized in that: v pits which are periodically arranged in a growth plane are embedded in the multiple quantum wells; the planar quantum well has a quantum-like structure and becomes the main light source of the LED.
The LED chip manufactured by the epitaxial structure has the working current density of 20A/cm2The corresponding emission peak wavelength is between 520nm and 590 nm.
The starting position of the V pit is a substrate or an N-type layer.
The N-type layer includes, but is not limited to, one or more of a buffer layer, an N-type AlInGaN layer, a well pre-preparation layer.
The P-type layer includes, but is not limited to, one or more of an electron blocking layer, a hole injection layer, and a P-type AlInGaN layer.
And the growth plane of the N-type layer or the growth plane of the P-type layer is a polar plane, namely a (0001) crystal plane family.
The side wall of the V pit is a semipolar plane, and the (10-11) crystal plane family is the best.
The size of the V pits is the same, the projection of the growth plane of the N-type layer or the growth plane of the P-type layer is regular hexagons which are periodically arranged, and each regular hexagon is only adjacent to other six regular hexagons; the side lengths of all the regular hexagons are equal, and the center distances of any two adjacent regular hexagons are equal.
The substrate includes, but is not limited to: sapphire, SiC, GaN or Si.
After the growth of the multiple quantum well structure is finished and before the growth of a P type layer is started, the side length a of the projection of the V pit on the regular hexagon of the (0001) crystal plane family growth plane ranges from 0.01 to 5 micrometers, and the center distance d between two adjacent regular hexagons is more than 2 times of the side length a of the regular hexagon: d is greater than 2a, and the ratio eta value range of the sum of all the regular hexagonal areas and the area of the multiple quantum well in the growth plane is 12-75%.
Preferred ranges are: the side length a of the regular hexagon is 0.02-0.5 micron, and eta value is 25-55%.
The implementation mode of the epitaxial structure adopts n times of epitaxy (n =1,2,3, 4); in the process of finishing the growth of the epitaxial structure, the growth is interrupted midway, and after the epitaxial wafer is taken out for process treatment, the epitaxial wafer is put into the epitaxial furnace again for continuous growth, namely secondary growth; n epi-runs occur (n-1) times for this interruption.
The periodic arrangement of the V pits can be realized in two ways: 1) directly forming V pits which are periodically arranged on the V pit initial layer by an etching or corrosion process; 2) dislocation distribution is controlled through a process, dislocation is periodically arranged, and then V pits are generated in a preparation layer in front of a well through dislocation induction, so that the V pits inherit the periodic arrangement mode of the dislocation. The V pits achieved in both ways are collectively referred to as "process V pits".
The quantum dot-like structure is a high In component light emitting region formed In a multiple quantum well due to fluctuation of an In component.
Because the In component In the green and yellow LED multi-quantum well structure is high, the In is easy to segregate, and the InGaN cluster with the high In component, which has poor crystal quality and does not emit light, is formed. In the AlInGaN-based green and yellow LED epitaxial structure, one characteristic is that: the In component In the multiple quantum well is not obviously segregated, and only has a certain degree of fluctuation of the In component, so that some quantum dot structures with high crystal quality and luminescence are formed In the multiple quantum well and become the main luminous source of the LED. Such LEDs may be referred to as quantum dot-like light emitting LEDs. The invention has the other characteristics that: the process V pits are introduced into the epitaxial structure, and are designed to be consistent in size, periodically arranged and uniformly distributed, so that the function of enhancing hole injection of the V pits is optimized, and the luminous efficiency of the LED is improved.
To distinguish from the "process V pits", V pits induced by randomly distributed dislocations generated during the natural growth process are "natural V pits". Fig. 3 is a schematic view of an epitaxial structure according to the present invention. As shown in fig. 3, the generation of "process V pits" is not dependent on dislocations. Dislocations are still randomly distributed. Although the growth of the 'natural V pit' can be inhibited by controlling the epitaxial process; but inevitably, dislocations can still induce the generation of "natural V pits" of smaller size. Such a "natural V pit" having a small size has a function of shielding dislocations, although it has a weak function of enhancing hole injection. In addition, due to the existence of the quantum dot-like structure, the current carriers are localized and are not easy to be captured by dislocation. Under the combined action of the quantum dot-like structure and the 'natural V pit', dislocation is completely shielded, so that the luminous efficiency of the LED is basically not influenced. Therefore, for the "process V pit", the function of shielding dislocation is not considered, and only the function of enhancing hole injection is considered. Optimization of the V-pit enhanced hole injection function can be achieved by intentionally controlling the "process V-pits" to be periodically arranged in the growth plane (as shown in fig. 4, arranged in AB for one period).
Therefore, the invention has the following advantages:
1. the quasi-quantum dot light-emitting structure in the multiple quantum wells reduces the influence of dislocation;
2. the multiple quantum wells are embedded with 'process V pits' which are periodically arranged in a growth plane, so that the hole injection function of the V pits is further enhanced;
3. optimization of the V-pit enhanced hole injection function can be realized, and the luminous efficiency of the LED can be improved.
Drawings
FIG. 1 is a schematic diagram of a V pit structure with a {10-11} plane as a side surface;
FIG. 2 is a schematic cross-sectional view of an LED epitaxial structure with V-pits; in the figure: the quantum well structure comprises a substrate 1, a buffer layer 2, an N-type AlInGaN layer 3, a V pit 4, a well front preparation layer 5, a platform quantum barrier 6, a V pit side wall quantum well 7, a V pit side wall quantum barrier 8, a platform quantum well 9, a P-type AlInGaN layer 10, dislocations 11 and a multi-quantum well 12, wherein the substrate is a substrate;
FIG. 3 is a schematic view of an epitaxial structure according to the present invention; in the figure: 1 is a substrate, 2 is a buffer layer, 3 is an N-type AlInGaN layer, 4 is a 'process V pit', 5 is a preparation layer before a well, 6 is a platform quantum barrier, 7 is a V pit side wall quantum well, 8 is a V pit side wall quantum barrier, 9 is a platform quantum well, 10 is a platform quantum well in which some quantum dot-like structures (main luminous sources) are formed, 11 is a P-type AlInGaN layer, 12 is a dislocation, 13 is a multiple quantum well, and 14 is a 'natural V pit';
FIG. 4 is a schematic view of V pits periodically arranged in the growth plane (0001) plane; in the figure: 1 is a 'process V pit' (the projection on the growth plane is a regular hexagon), 2 is a growth plane (0001) plane, and the periodic arrangement mode is ABABAB … …;
FIG. 5 is a schematic view of an epitaxial structure in example 1; in the figure: 1 is a substrate, 2 is a buffer layer, 3 is an N-type AlInGaN layer, 4 is a 'process V pit', 5 is a preparation layer before a well, 6 is a platform quantum barrier, 7 is a V pit side wall quantum well, 8 is a V pit side wall quantum barrier, 9 is a platform quantum well, 10 is a platform quantum well in which some quantum dot-like structures (main luminous sources) are formed, 11 is a P-type AlInGaN layer, 12 is a dislocation, 13 is a multiple quantum well, and 14 is a 'natural V pit';
FIG. 6 is a schematic view of an epitaxial structure in example 2; in the figure: 1 is a substrate, 2 is a buffer layer, 3 is an N-type AlInGaN layer, 4 is a 'process V pit', 5 is a preparation layer before a well, 6 is a platform quantum barrier, 7 is a V pit side wall quantum well, 8 is a V pit side wall quantum barrier, 9 is a platform quantum well, 10 is a platform quantum well in which some quantum dot-like structures (main luminous sources) are formed, 11 is a P-type AlInGaN layer, 12 is a dislocation, 13 is a multiple quantum well, and 14 is a 'natural V pit';
FIG. 7 is a schematic view of an epitaxial structure in example 3; in the figure: 1 is a substrate, 2 is a buffer layer, 3 is an N-type AlInGaN layer, 4 is a 'process V pit', 5 is a preparation layer before a well, 6 is a platform quantum barrier, 7 is a V pit side wall quantum well, 8 is a V pit side wall quantum barrier, 9 is a platform quantum well, 10 is a platform quantum well in which some quantum dot-like structures (main luminous sources) are formed, 11 is a P-type AlInGaN layer, 12 is a dislocation, 13 is a multiple quantum well, and 14 is a 'natural V pit';
FIG. 8 is a schematic view of an epitaxial structure in example 5; in the figure: the light-emitting diode is characterized in that the light-emitting diode comprises a substrate 1, a buffer layer 2, an N-type AlInGaN layer 3, a process V pit 4, a pre-well preparation layer 5, a platform quantum barrier 6, a V pit side wall quantum well 7, a V pit side wall quantum barrier 8, a platform quantum well 9, a plurality of quantum dot-like structures (main light-emitting sources) 10, a P-type AlInGaN layer 11, a process dislocation 12 and a multi-quantum well 13.
Detailed Description
The invention is further illustrated by the following examples in connection with the accompanying drawings.
Example 1:
this example describes an epitaxial structure in which the V pit start position is the substrate.
Refer to fig. 5. In the figure, 1 is a substrate, and "process V pits" 4 are periodically arranged on the substrate 1, and a schematic projection diagram of the "process V pits" 4 on the upper surface of the substrate 1 is shown in fig. 4. Growing a buffer layer 2 on a substrate 1, wherein due to the existence of a process V pit 4 on the substrate 1, the buffer layer 2 with a semi-polar surface can also grow on the side wall of the process V pit 4; further, the growth rate of the buffer layer 2 on the semipolar plane is smaller than that on the polar plane. Therefore, "process V pits" 4 are also formed in the buffer layer 2, and have a size larger than the size of "process V pits" 4 in the substrate 1, and inherit the periodic arrangement of the "process V pits" 4 of the substrate 1. Similarly, growing the N-type AlInGaN layer 3 on the buffer layer 2 also forms "process V pits" 4 periodically arranged in the N-type AlInGaN layer 3, and the size continues to increase. Subsequently, a well preparation layer 5 is grown on the N-type AlInGaN layer 3, and small "natural V-pits" 13 induced by dislocations 11 are formed in the well preparation layer 5 in addition to the "process V-pits" 4 that inherit the periodic arrangement in the N-type AlInGaN layer 3. Then, multiple quantum well 12 is grown in pre-well preparation layer 4, V-pit sidewall quantum well 7 and V-pit sidewall quantum barrier 8 are formed on the sidewalls of "process V-pit" 4 and "natural V-pit" 13, and mesa quantum well 9 and mesa quantum barrier 6 are formed on the (0001) growth plane. In the platform quantum well 9, the growth process is controlled to avoid In segregation, and some quantum dot-like structures 10 with high crystal quality are formed by utilizing fluctuation of an In component. Finally, a P-type AlInGaN layer 11 is grown, filling the "process V-pits" 4 and the "natural V-pits" 13, and the epitaxial layer is flattened. The epitaxial structure directly forms a 'process V pit' 4 on the substrate 1, so that the whole epitaxial structure can be completed by adopting a one-time epitaxial mode.
Example 2:
compared with the embodiment 1, the substrate 1 is changed to have a structure without the process V pit 4, namely the process V pit 4 is started in the buffer layer 2; the epitaxial structure is referenced to fig. 6. The epitaxial structure needs to introduce the process V pit 4 after the buffer layer 2 is grown, so that the whole epitaxial structure needs to be completed by adopting a secondary epitaxial mode.
Example 3:
compared with the embodiment 2, the buffer layer 2 is changed to have a structure without the process V pit 4, namely the process V pit 4 starts in the N-type AlInGaN layer 3; the epitaxial structure is referenced to fig. 7. The epitaxial structure needs to introduce a 'process V pit' 4 after the growth of the N-type AlInGaN layer 3, so that the whole epitaxial structure needs to be completed by adopting a secondary epitaxial mode.
Example 4:
compared with the embodiment 3, the N-type AlInGaN layer 3 is changed into a structure without a process V pit 4, namely the process V pit 4 starts in the well front preparation layer 5; the epitaxial structure is referred to fig. 3. The epitaxial structure needs to introduce the process V pit 4 after the preparation layer 5 before the well is grown, so that the whole epitaxial structure needs to be completed by adopting a secondary epitaxial mode.
Example 5:
compared with the embodiment 4, the dislocation forming position is controlled by the process, so that the dislocation distribution is periodically distributed on the growth plane; such dislocations are referred to as "process dislocations" 12. Then, "process V pits" 4 are induced in the pre-well preparation layer 5 by "process dislocations" 12, and at this time "process V pits" 4 inherit the distribution of "process dislocations" 12 and are periodically arranged in the growth plane (as shown in fig. 4). Since the occurrence of dislocations is process controlled, there are no "natural V-pits" induced by randomly distributed dislocations that are generated during natural growth. The epitaxial structure is referenced to fig. 8. The completion of the structure requires controlling the formation position of dislocation in the growth process, interrupting the growth for many times and carrying out process treatment on the epitaxial wafer.
Claims (7)
1. An epitaxial structure of an AlInGaN-based green and yellow light emitting diode, comprising: a substrate for material growth; the AlInGaN-based semiconductor lamination layer is laminated on the substrate and at least comprises an N-type layer, a P-type layer and an AlInGaN multi-quantum well sandwiched between the N-type layer and the P-type layer, and is characterized in that: v pits which are periodically arranged in a growth plane are embedded in the multiple quantum wells; a quasi-quantum dot structure exists in the planar quantum well and becomes a main luminous source of the LED; the size of the V pits is the same, the projection of the growth plane of the N-type layer or the growth plane of the P-type layer is regular hexagons which are periodically arranged, and each regular hexagon is only adjacent to other six regular hexagons; the side lengths of all the regular hexagons are equal, and the center distances of any two adjacent regular hexagons are equal; nearest adjacent sides between any two adjacent regular hexagons are parallel to each other, so that the projection of the planar quantum well on a growth plane is a net structure formed by regular hexagonal rings; after the growth of the multiple quantum well structure is finished and before the growth of a P type layer is started, the side length a of the projection of the V pit on the regular hexagon of a (0001) crystal plane family growth plane ranges from 0.02 to 0.5 micrometer, and the center distance d between two adjacent regular hexagons is more than 2 times of the side length a of the regular hexagon: d is greater than 2a, and the value range of the ratio eta of the sum of the areas of all the regular hexagons to the area of the multi-quantum well on the growth plane is 25-55%.
2. The epitaxial structure of AlInGaN-based green and yellow light emitting diode according to claim 1, wherein the growth planes of the N-type layer or the P-type layer are all (0001) crystal plane families; the side wall of the V pit is a (10-11) crystal face family.
3. The epitaxial structure of an AlInGaN-based green and yellow light emitting diode according to claim 1, wherein: the implementation mode of the epitaxial structure adopts n times of epitaxy (n =1,2,3, 4); in the process of finishing the growth of the epitaxial structure, the growth is interrupted midway, and after the epitaxial wafer is taken out for process treatment, the epitaxial wafer is put into the epitaxial furnace again for continuous growth; n epi-runs occur (n-1) times for this interruption.
4. The epitaxial structure of AlInGaN-based green and yellow light-emitting diodes according to claim 1, wherein the periodic arrangement of the V pits is formed by one of 1) forming the periodically arranged V pits directly on a V pit starting layer by an etching or corrosion process, 2) controlling dislocation distribution by a process, realizing the periodic arrangement of dislocations, and then generating the V pits induced by dislocations in the preparation layer before the well, wherein the V pits realized by the two processes are collectively called "process V pits".
5. The epitaxial structure of AlInGaN-based green and yellow light emitting diode as claimed in claim 1, wherein the LED chip fabricated by the epitaxial structure is onThe working current density is 20A/cm2The corresponding emission peak wavelength is between 520nm and 590 nm.
6. The epitaxial structure of AlInGaN-based green and yellow light emitting diode according to claim 1, wherein a starting position of the formation of the V-pit is a substrate or an N-type layer.
7. The epitaxial structure of AlInGaN-based green and yellow light emitting diode as claimed in claim 1, wherein the substrate comprises one of sapphire, SiC, GaN or Si.
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| CN108447956B (en) * | 2018-03-30 | 2020-09-29 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN108695417A (en) * | 2018-05-08 | 2018-10-23 | 太原理工大学 | Unstressed configuration powder GaN base white light LEDs epitaxial structure and preparation method thereof based on V-arrangement hole |
| CN109817771B (en) * | 2019-01-22 | 2021-10-01 | 江西兆驰半导体有限公司 | High-reliability nitride light-emitting diode and preparation method thereof |
| CN111293134B (en) * | 2020-02-06 | 2024-06-04 | 厦门大学 | Three-color Micro/Nano LED array without huge transfer and manufacturing method thereof |
| US11621370B2 (en) * | 2020-06-19 | 2023-04-04 | Seoul Viosys Co., Ltd. | Single chip multi band led and application thereof |
| CN112736174A (en) * | 2021-01-04 | 2021-04-30 | 宁波安芯美半导体有限公司 | Deep ultraviolet LED epitaxial structure and preparation method thereof |
| CN112786743B (en) * | 2021-01-26 | 2022-04-01 | 中国科学院半导体研究所 | Orange-yellow LED device based on V-pit regulation and control and preparation method thereof |
| CN112993101B (en) * | 2021-03-08 | 2022-05-17 | 华灿光电（浙江）有限公司 | Preparation method of light emitting diode epitaxial wafer |
| CN115050860B (en) * | 2022-06-15 | 2023-09-22 | 江苏第三代半导体研究院有限公司 | Preparation method and device of semiconductor light-emitting structure based on III-nitride quantum dots |
| CN117133841B (en) * | 2023-10-26 | 2024-01-30 | 江西兆驰半导体有限公司 | InGaN-based green light emitting diode epitaxial wafer, preparation method thereof and LED |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101145589A (en) * | 2006-09-12 | 2008-03-19 | 上海宇体光电有限公司 | GaN base LED possessing even distribution V-shaped pit and its growth method |
| CN101345274A (en) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | Method for improving luminous efficiency of GaN based LED by using graphic underlay |
| CN102468383A (en) * | 2010-11-09 | 2012-05-23 | 隆达电子股份有限公司 | Solid-state light-emitting component with quantum cluster column and manufacturing method thereof |
| CN105552188A (en) * | 2015-12-16 | 2016-05-04 | 清华大学 | Semiconductor structure and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130061306A (en) * | 2011-12-01 | 2013-06-11 | 서울옵토디바이스주식회사 | Nitride semiconductor device having improved esd characteristics |
| JP5881393B2 (en) * | 2011-12-06 | 2016-03-09 | 国立大学法人山口大学 | Nitride semiconductor light emitting device and manufacturing method thereof |
-
2017
- 2017-04-27 CN CN201710286224.7A patent/CN107068818B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101145589A (en) * | 2006-09-12 | 2008-03-19 | 上海宇体光电有限公司 | GaN base LED possessing even distribution V-shaped pit and its growth method |
| CN101345274A (en) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | Method for improving luminous efficiency of GaN based LED by using graphic underlay |
| CN102468383A (en) * | 2010-11-09 | 2012-05-23 | 隆达电子股份有限公司 | Solid-state light-emitting component with quantum cluster column and manufacturing method thereof |
| CN105552188A (en) * | 2015-12-16 | 2016-05-04 | 清华大学 | Semiconductor structure and manufacturing method thereof |
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