CN107068813B - Based on the face c Al2O3The light emitting diode of III group-III nitride of the face c of substrate - Google Patents
Based on the face c Al2O3The light emitting diode of III group-III nitride of the face c of substrate Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 78
- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 81
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 47
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 90
- 238000006243 chemical reaction Methods 0.000 claims description 56
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 53
- 229910021529 ammonia Inorganic materials 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 238000001259 photo etching Methods 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims 3
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 1
- 150000002830 nitrogen compounds Chemical class 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 239000000463 material Substances 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005915 ammonolysis reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses one kind to be based on the face c Al2O3The light emitting diode of III group-III nitride of the face c of substrate mainly solves existing LED structure complexity, the long problem of process cycle.Comprising: the face c Al2O3Substrate layer, AlN nucleating layer, luminescent layer and electrode, wherein AlN nucleating layer more alternate than the low AlN annulus for 800-1200 is formed by V/III than the high AlN annulus and V/III for 15000-23000, luminescent layer is one layer of III group iii nitride layer of the face c, and by the face N annulus and metal covering annulus is alternate forms.III group iii nitride layer increases the density on transoid farmland using circular ring structure；The Ill-nitride layer uses GaN or AlN or AlGaN, sends out ultraviolet light, extreme ultraviolet and deep ultraviolet light respectively.For the present invention compared to traditional LED, device architecture and production process are simple, and process cycle shortens, and can be used for illuminating, display screen and backlight.
Description
Technical field
The invention belongs to microelectronics technologies, in particular to a kind of to be based on the face c Al2O3III group-III nitride of the face c of substrate
Light emitting diode can be used for illuminating, the various optical applications of display screen and backlight.
Technical background
Light-emitting diode LED is due to the advantages that its is high-efficient, and the service life is long, energy conservation and environmental protection, so that LED illumination develops rapidly.
Nitride has biggish forbidden bandwidth as direct band-gap semicondictor, by the ratio prohibited by rule for adjusting each component in material
Bandwidth can change between 0.7ev to 6.2ev, cover the wavelength band from infrared to extreme ultraviolet, obtain in LED application
It obtained and was widely used.Wherein, III hi-nitride semiconductor material is the most common material for preparing LED, as AlN base, GaN base,
The semiconductor materials such as InN base.III hi-nitride semiconductor material of wurtzite structure usually has the c-axis for being parallel to structure cell
(0001) polar axis in direction, since center inversion symmetry, III group-III nitride of the face c is not present along polarity axis direction
III group nitride material of III group nitride material of the face N and metal covering can be divided by the difference of polar orientation.III group-III nitride of the face N
With the intersection of III group-III nitride of metal covering, referred to as transoid farmland IDB.
P.J.Schuck et al. had studied the optical characteristics on transoid farmland in GaN, the i.e. luminous intensity on transoid farmland in 2001
More than the body face Ga N region an order of magnitude, accordingly, during which thinks that transoid farmland can regard that a high efficient radiation is compound as
Transoid farmland can theoretically be regarded as Quantum Well, and the GaN film on the transoid farmland with certain density, can be used for making by the heart
LED greatly reduces processing step without grown quantum well structure in this way.Based on above-mentioned conclusion, with certain density
The III group-III nitride film on transoid farmland, can make the different LED of luminescent color.
Metallo-organic compound chemical gaseous phase deposition MOCVD technology is outside current most commonly used III group-III nitride semiconductor
Prolong technology.By MOCVD technique in the face c Al2O3III group-III nitride film of epitaxial growth generally has metal covering pole on substrate
Property.Nicholas A.Fichtenbaum is mentioned in doctoral thesis within 2008, using MOCVD growth mechanism in the face c Al2O3Lining
GaN is grown on bottom, after high-temperature ammonolysis processing step, acquisition is the polar GaN material in the face N；And it uses at low temperature nitride
After managing step, acquisition is the polar GaN material in the face Ga.2015 Nian Linzhi spaces point out in doctoral thesis, nitrogen treatment and
High ammonia flow is the main feature of the face N GaN material growing method in high-temperature AlN nucleating layer growth course.Utilize above-mentioned reason
By, when growing III group-III nitride of the face c, mask layer is done using SiN, the different zones of substrate are carried out to different nitrogen treatment, it can
To grow the face N polarity and polar III group-III nitride of metal covering simultaneously on substrate, the intersection in two opposed polarity faces, meeting
There is the generation of transoid farmland.The window region of SiN mask layer is designed as annulus shape, changes the ring width and spacing of annulus, then can be obtained
The III group-III nitride film on the transoid farmland of different densities, can be used for making the LED component of novel no quantum well structure.
Currently based on Al2O3The luminous carrier by well layer/barrier layer quantum well structure of the LED component of substrate radiates
Compound, structure includes substrate layer, nucleating layer, III group-III nitride of III group iii nitride layer of N-shaped, quantum well layer and p-type from bottom to top
Layer, wherein quantum well layer includes III group-III nitride well layer of multilayer and III group-III nitride barrier layer, and structure is sufficiently complex, and prepares
Journey needs III group-III nitride of first growing n-type on substrate, regrowth quantum well structure, III group-III nitride of regrowth p-type, so that passing
Uniting, LED production process is cumbersome, and process cycle is long.
Summary of the invention
It is a kind of based on the face c Al it is an object of the invention in view of the above shortcomings of the prior art, propose2O3The face c III of substrate
The light emitting diode of group-III nitride shortens process cycle to simplify device architecture and production process.
To achieve the above object, technical scheme is as follows:
1. one kind is based on the face c Al2O3The light emitting diode of III group-III nitride of the face c of substrate, comprising: the face c Al2O3Substrate layer,
AlN nucleating layer, luminescent layer and electrode, it is characterised in that: AlN nucleating layer is by V/III than the high AlN annulus for 15000-23000
With V/III composition more alternate than low AlN annulus for 800-1200, luminescent layer is one layer of III group iii nitride layer of the face c, III race nitridation
Nitride layer is by the face N annulus and metal covering annulus is alternate forms.
Above-mentioned film, it is characterised in that: the AlN nucleating layer with a thickness of 20-40nm, and high AlN annulus with it is low
The ring width of AlN annulus is 5-50nm, and spacing between the two is 5-50nm.
Above-mentioned film, it is characterised in that: the III group-III nitride film of the face c with a thickness of 700-2000nm.
Above-mentioned film, it is characterised in that: the ring width of the face the N annulus and metal covering annulus is 5-50nm, the two it
Between spacing be 5-50nm.
Above-mentioned film, it is characterised in that: III group iii nitride layer of the face c, any one using GaN, in AlN and AlGaN.
2. one kind is based on the face c Al2O3The preparation method of the light emitting diode of III group-III nitride of the face c of substrate, comprising:
1) it is heat-treated:
By the face c Al2O3Substrate is placed in metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of reaction chamber is dropped
Low to less than 2 × 10-2Torr；It is passed through hydrogen to reaction chamber again, MOCVD chamber pressure is made to be upgraded to 20-760Torr, by substrate
Being heated to temperature is 900-1200 DEG C, and keeps 5-10min, completes the heat treatment to substrate base；
2) SiN mask layer is grown:
2a) use MOCVD technique under conditions of reaction chamber temperature is 950-1100 DEG C, while being passed through flow is 3000-
The ammonia and flow of 4000sccm is the silicon source of 10-20sccm, and growth thickness is 20-40nm's on substrate after heat treatment
SiN mask layer；
2b) using photoetching process according to the spacing etch away sections SiN mask layer of 5-50nm to Al2O3Substrate is formed several
Ring width is the SiN annulus figure of 5-50nm；
3) high AlN annulus is grown:
3a) using MOCVD technique to be passed through flow under conditions of reaction chamber temperature is 1000-1100 DEG C is 3000-
The ammonia of 4000sccm continues 3-5min and is nitrogenized；
Reaction chamber temperature 3b) is reduced to 950-1100 DEG C, while being passed through ammonia and flow that flow is 3000-4000sccm
For the silicon source of 10-20sccm, i.e., V/III than being 15000-23000, in Al2O3Growth thickness is the height of 20-40nm on substrate
AlN annulus, the ring width of high AlN annulus are 5-50nm；
4) SiN mask layer is grown:
MOCVD technique 4a) is used to keep reaction chamber temperature for 950-1100 DEG C, while being passed through flow is 3000-
The ammonia and flow of 4000sccm is the silicon source of 10-20sccm, is grown on the SiN mask layer and high AlN annulus in 2) thick
Degree is the SiN mask layer of 20-40nm；
4b) using photoetching process according to the spacing etch away sections SiN mask layer of 5-50nm to Al2O3Substrate is formed several
Ring width is the SiN annulus figure of 5-50nm, etched shape and position with 2) in non-etched portions it is identical；
5) low AlN annulus is grown:
5a) using MOCVD technique to be passed through flow under conditions of reaction chamber temperature is 1000-1100 DEG C is 300-
The ammonia of 400sccm continues 3-5min and is nitrogenized；
Reaction chamber temperature 5b) is reduced to 950-1100 DEG C, while being passed through ammonia that flow is 300-400sccm and flow is
The silicon source of 20- 40sccm, i.e., V/III than being 800-1200, in Al2O3The low AlN annulus that ring width is 5-50nm is grown on substrate,
Its thickness with 3) in high AlN annulus thickness it is identical；
SiN exposure mask 5c) is removed using photoetching process；
6) III group iii nitride layer of the face growing n-type c:
Use MOCVD technique growth thickness for III group iii nitride layer of the face N-shaped c of 700-2000nm on AlN nucleating layer, then
Using III group iii nitride layer of photoetching process etch away sections N-shaped to AlN nucleating layer；
7) III group iii nitride layer of the face p-type c is grown:
Use MOCVD technique growth thickness for the p of 700-2000nm in the place that III group iii nitride layer of N-shaped is etched away
III group iii nitride layer of the face type c；Reaction chamber temperature is reduced to 850 DEG C again, in H2It anneals under atmosphere；
8) depositing electrode:
Using the method depositing n-type electrode on III group iii nitride layer of N-shaped respectively of metal sputtering, in III group-III nitride of p-type
Layer depositing p-type electrode, completes element manufacturing.
The present invention has the advantage that
1. the present invention increases the boundary of III group-III nitride of the face N Yu III group-III nitride of metal covering due to the structure using annulus
Face, to increase the density on transoid farmland；Simultaneously because utilizing one layer of III race's nitrogen of the face c comprising the face N annulus and metal covering annulus
Compound layer replaces the quantum well structure of tradition LED to shine, and simplifies device architecture.
2. luminescent layer of the invention forms III race of the face c by the face N annulus and metal covering annulus are alternate due to need to only grow one layer
Nitride layer, the luminescent layer compared to traditional LED need to grow well layer and barrier layer of III group iii nitride layer of multilayer as Quantum Well, subtract
Process flow is lacked.
3. the present invention reduces process flow due to device simplicity structure, fabrication cycle is shortened.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of device of the present invention；
Fig. 2 is the top view of Fig. 1；
Fig. 3 is the flow chart that the present invention prepares Fig. 1 device.
Specific embodiment
The present invention will be further described below with reference to the accompanying drawings.
Referring to Fig.1, device architecture of the invention includes: the face c Al2O3Substrate layer, AlN nucleating layer, III group iii nitride layer of the face c
And electrode.The AlN nucleating layer is located at the face c Al2O3On substrate layer, the AlN nucleating layer is by V/III than for 15000-'s 23000
High AlN annulus and V/III composition more alternate than low AlN annulus for 800-1200, the AlN nucleating layer with a thickness of 20-40nm, should
The ring width of high AlN annulus and low AlN annulus is 5-50nm；III group iii nitride layer of the face c is located on AlN nucleating layer, this III
Group iii nitride layer includes III group iii nitride layer of III group iii nitride layer of N-shaped and p-type, wherein III race of III group iii nitride layer of n type and p-type
The thickness of nitride layer is 700-2000nm, and III group iii nitride layer of p-type is located at the right of III group iii nitride layer of N-shaped, the N-shaped III
Group iii nitride layer is by N-shaped N face annulus and N-shaped metal covering annulus is alternate forms, the ring of N-shaped N face annulus and N-shaped metal covering annulus
Width is 5-50nm, and III group iii nitride layer of p-type is by p-type N face annulus and p-type metal covering annulus is alternate forms, the face p-type N circle
The ring width of ring and p-type metal covering annulus is 5-50nm；Electrode includes n-type electrode and p-type electrode, is located at III race's nitrogen of N-shaped
On III group iii nitride layer of compound layer and p-type.
III group iii nitride layer of the face c sends out the light of different colours using GaN or AlN or AlGaN material as light emitting source, when
When using GaN, luminescent layer sends out ultraviolet light；When using AlN, luminescent layer sends out extreme ultraviolet；When using AlGaN, luminescent layer hair
Deep ultraviolet light.
Referring to Fig. 2, III group iii nitride layer of the face c includes the face N-shaped N annulus, N-shaped metal covering annulus, p-type N face annulus and p
Type metal covering annulus, annulus ring width are all the same；
Referring to Fig. 3, the present invention provides preparation based on the face c Al2O3The three of the light emitting diode of III group-III nitride of the face c of substrate
Kind embodiment.
Embodiment 1 is prepared a kind of based on the face c Al2O3The UV LED of the face the c GaN of substrate.
Step 1, it is heat-treated.
By the face c Al2O3Substrate is placed in metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of reaction chamber is dropped
Low to less than 2 × 10-2Torr；It is passed through hydrogen to reaction chamber again, MOCVD chamber pressure is made to be upgraded to 20Torr, by silicon
To 900 DEG C, 5min is maintained, completes the heat treatment to substrate.
Step 2, SiN mask layer is grown.
Reaction chamber temperature 2a) is set as 950 DEG C using MOCVD technique, pressure is set as 20Torr, while being passed through flow and being
The ammonia and flow of 3000sccm is the silicon source of 10sccm, and growth thickness is the SiN exposure mask of 20nm on substrate after heat treatment
Layer；
Etch away sections SiN mask layer 2b) is etched to Al according to the spacing of 5nm using photoetching process2O3Substrate forms number
A ring width is the SiN annulus figure of 5nm；
Step 3, high AlN annulus is grown.
Reaction chamber temperature 3a) is upgraded to 1000 DEG C using MOCVD technique, the ammonia that flow is 3000sccm is passed through, continues
3min is to Al2O3Substrate carries out nitrogen treatment；
Reaction chamber temperature 3b) is reduced to 950 DEG C using MOCVD technique, holding pressure is 20Torr, while being passed through flow and being
The ammonia and flow of 3000sccm is the silicon source of 10sccm, i.e., V/III than being 23000, in Al2O3Growth thickness is on substrate
The high AlN annulus of 20nm, the ring width of high AlN annulus are 5nm.
Step 4, SiN mask layer is grown.
4a) keep reaction chamber temperature be 950 DEG C, pressure 20Torr, while be passed through flow be 3000sccm ammonia and
Flow is the silicon source of 10sccm, use on the SiN mask layer and high AlN annulus of MOCVD technique in step 2 growth thickness for
The SiN mask layer of 20nm；
Etch away sections SiN mask layer 4b) is etched to Al according to the ring width spacing of 5nm using photoetching process2O3Substrate, shape
The SiN annulus figure for being 5nm at several ring widthes, etched shape and position are identical as etched portions non-in step 2.
Step 5, low AlN annulus is grown.
Reaction chamber temperature 5a) is upgraded to 1000 DEG C using MOCVD technique, is passed through the ammonia that flow is 300sccm, it is right
Al2O3The nitrogen treatment of substrate progress 3min；
Reaction chamber temperature 5b) is reduced to 950 DEG C, holding pressure is 20Torr, while being passed through the ammonia that flow is 300sccm
The silicon source for being 20sccm with flow, i.e., V/III ratio are 1200, then using MOCVD technique in Al2O3Growth thickness is on substrate
The low AlN annulus of 20nm, the ring width of low AlN annulus are 5nm；
SiN exposure mask 5c) is removed using photoetching process.
Step 6, the face growing n-type c GaN layer.
6a) keep reaction chamber temperature be 950 DEG C, pressure 20Torr, while be passed through flow be 2500sccm ammonia, stream
Amount be 150sccm gallium source and flow be 10sccm silicon source, then use MOCVD technique on AlN nucleating layer growth thickness for
The face the N-shaped c GaN layer of 700nm；
6b) using photoetching process etch away sections n-type GaN layer to AlN nucleating layer.
Step 7, the face p-type c GaN layer is grown.
It uses MOCVD technique to keep reaction chamber temperature for 950 DEG C, pressure 20Torr, while being passed through ammonia, gallium source and magnesium
Source, in the grown that n-type GaN layer is etched away with a thickness of the face the p-type c GaN layer of 700nm, wherein the flow of ammonia is
2500sccm, the flow in gallium source are 150sccm, and the flow in magnesium source is 100sccm；Reaction chamber temperature is maintained 850 DEG C again,
H2Under atmosphere, anneal 10min.
Step 8, depositing electrode.
Using the method depositing n-type electrode in n-type GaN layer respectively of metal sputtering, in p-type GaN layer depositing p-type electrode,
Complete the production to uv-LED device.
Embodiment 2, preparing emission wavelength is 200nm based on the face c Al2O3The extreme ultraviolet light-emitting diodes of the face the c AlN of substrate
Pipe.
Step 1, heat treatment.
By the face c Al2O3Substrate is placed in metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of reaction chamber is dropped
Low to less than 2 × 10-2Torr；It is passed through hydrogen to reaction chamber again, MOCVD chamber pressure is made to be upgraded to 200Torr, by silicon
To 1000 DEG C, the heat treatment of 7min is carried out to substrate.
Step 2 grows SiN mask layer.
2.1) it uses MOCVD technology controlling and process reaction chamber temperature for 1000 DEG C, pressure 200Torr, while being passed through flow and being
The ammonia and flow of 3500sccm is the silicon source of 15sccm, and growth thickness is the SiN exposure mask of 30nm on substrate after heat treatment
Layer；
2.2) etch away sections SiN mask layer is etched to Al according to the ring width spacing of 20nm using photoetching process2O3Substrate,
Form the SiN annulus figure that several ring widthes are 20nm；
Step 3 grows high AlN annulus.
3.1) reaction chamber temperature is upgraded to 1050 DEG C using MOCVD technique, is passed through the ammonia that flow is 3500sccm, continues
4min is to Al2O3Substrate carries out nitrogen treatment；
3.2) it under conditions of reaction chamber temperature is reduced to 1000 DEG C, pressure is 200Torr, while being passed through flow and being
The ammonia and flow of 3500sccm is the silicon source of 15sccm, i.e., V/III than being 18000, using MOCVD technique in Al2O3Substrate
Upper growth thickness is the high AlN annulus of 30nm, and the ring width of high AlN annulus is 20nm.
Step 4 grows SiN mask layer.
4.1) it uses MOCVD technique to keep reaction chamber temperature for 1000 DEG C, pressure 200Torr, while being passed through flow and being
The ammonia and flow of 3500sccm is the silicon source of 15sccm, is grown on the SiN mask layer and high AlN annulus in step 2 thick
Degree is the SiN mask layer of 30nm；
4.2) etch away sections SiN mask layer is etched to Al according to the ring width spacing of 20nm using photoetching process2O3Substrate,
The SiN annulus figure that several ring widthes are 20nm is formed, etched shape and position are identical as etched portions non-in step 2；
Step 5 grows low AlN annulus.
5.1) reaction chamber temperature is upgraded to 1050 DEG C using MOCVD technique, is passed through the ammonia that flow is 350sccm, continues
4min, to Al2O3Substrate carries out nitrogen treatment；
5.2) reaction chamber temperature is reduced to 1000 DEG C, chamber pressure keeps 200Torr, while being passed through flow and being
The ammonia and flow of 350sccm is the silicon source of 30sccm, i.e., V/III than being 900, using MOCVD technique in Al2O3It is raw on substrate
The long low AlN annulus with a thickness of 30nm, the ring width of low AlN annulus are 20nm；
5.3) SiN exposure mask is removed using photoetching process.
Step 6, growing n-type c face AlN layer.
6.1) keeping reaction chamber temperature is 1000 DEG C, pressure 200Torr, while being passed through the ammonia that flow is 3000sccm
Gas, the silicon source that the silicon source and flow that flow is 200sccm are 15sccm, using MOCVD technique on AlN nucleating layer growth thickness
For the N-shaped c face AlN layer of 1000nm；
6.2) using AlN layers of photoetching process etch away sections N-shaped to AlN nucleating layer.
Step 7 grows p-type c face AlN layer.
Use MOCVD technique maintain reaction chamber temperature for 1000 DEG C, pressure 200Tor, while be passed through ammonia, silicon source and
Magnesium source, in AlN layers of grown being etched away of N-shaped with a thickness of the p-type c face AlN layer of 1000nm, wherein the flow of ammonia is
3000sccm, the flow of silicon source are 200sccm, and the flow in magnesium source is 150sccm；Reaction chamber temperature is reduced to 850 DEG C again, in H2
Under atmosphere, anneal 10min.
Step 8, depositing electrode.
Using the method depositing n-type electrode on N-shaped AlN layer respectively of metal sputtering, in AlN layers of depositing p-type electrode of p-type,
Complete the production of extreme ultraviolet LED component.
Embodiment 3, preparing emission wavelength is 280nm based on the face c Al2O3The face the c Al of substrate0.43Ga0.57The deep ultraviolet of N
Light emitting diode.
Step A, heat treatment.
By the face c Al2O3Substrate is placed in metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of reaction chamber is dropped
Low to less than 2 × 10-2Torr；It is passed through hydrogen to reaction chamber again, MOCVD chamber pressure is made to be raised to 760Torr, by underlayer temperature
1200 DEG C are heated to, the heat treatment of 10min is carried out to substrate.
Step B grows SiN mask layer.
B1 reaction chamber temperature) is reduced to 1100 DEG C, maintenance chamber pressure is 760Torr, while being passed through flow and being
The ammonia and flow of 4000sccm is the silicon source of 20sccm, using MOCVD technique in Al2O3Growth thickness is 40nm's on substrate
SiN mask layer；
B2 etch away sections SiN mask layer) is etched to Al according to the ring width spacing of 50nm using photoetching process2O3Substrate, shape
The SiN annulus figure for being 50nm at several ring widthes；
Step C grows high AlN annulus.
C1 reaction chamber temperature) is upgraded to 1100 DEG C using MOCVD technique, is passed through the ammonia that flow is 4000sccm, it is right
Al2O3The nitrogen treatment of substrate progress 5min；
C2) maintain reaction chamber temperature be 1100 DEG C, pressure 760Torr, while be passed through flow be 4000sccm ammonia
The silicon source for being 20sccm with flow, i.e., V/III than being 15000, using MOCVD technique in Al2O3Growth thickness is 40nm on substrate
High AlN annulus, the ring width of high AlN annulus is 50nm.
Step D grows SiN mask layer.
D1 MOCVD technique) is used to keep reaction chamber temperature for 1100 DEG C, holding pressure is 760Torr, while being passed through flow
The silicon source that ammonia and flow for 4000sccm are 20sccm is grown on SiN mask layer and high AlN annulus in stepb
With a thickness of the SiN mask layer of 40nm；
D2 etch away sections SiN mask layer) is etched to Al according to the ring width spacing of 50nm using photoetching process2O3Substrate, shape
The SiN annulus figure for being 50nm at several ring widthes, etched shape and position are identical as non-etched portions in step B；
Step E grows low AlN annulus.
E1 reaction chamber temperature) is upgraded to 1100 DEG C using MOCVD technique, the ammonia that flow is 400sccm is passed through, continues
5min, to Al2O3Substrate carries out nitrogen treatment；
E2) to maintain reaction chamber temperature be 1100 DEG C, chamber pressure 760Torr, while being passed through flow is 400sccm
The silicon source that ammonia and flow are 40sccm, i.e., V/III than being 800, using MOCVD technique in Al2O3Growth thickness is on substrate
The low AlN annulus of 40nm, the ring width of low AlN annulus are 50nm；
E3 SiN exposure mask) is removed using photoetching process.
The face step F, growing n-type c AlGaN layer.
F1) keeping reaction chamber temperature is 1100 DEG C, pressure 760Torr, while being passed through ammonia, silicon source, gallium source and silicon source,
MOCVD technique growth thickness on AlN nucleating layer is used for the face the N-shaped c AlGaN layer of 2000nm, the wherein flow of ammonia to be
3500sccm, the flow of silicon source are 250sccm, and the flow in gallium source is 250sccm, and the flow of silicon source is 20sccm；
F2) using photoetching process etch away sections N-shaped AlGaN layer to AlN nucleating layer.
Step G grows the face p-type c AlGaN layer.
MOCVD technique is used, for 1100 DEG C, under conditions of pressure is 760Torr, while to be passed through ammonia in reaction chamber temperature
Gas, silicon source, gallium source and magnesium source, in the grown that N-shaped AlGaN layer is etched away with a thickness of the p-type c face AlN layer of 2000nm,
Wherein the flow of ammonia is 3500sccm, and the flow of silicon source is 250sccm, and the flow in gallium source is 250sccm, and the flow in magnesium source is
180sccm；Reaction chamber temperature is reduced to 850 DEG C again, in H2Under atmosphere, anneal 10min.
Step H, depositing electrode.
Using the method depositing n-type electrode in N-shaped AlGaN layer respectively of metal sputtering, p type is deposited in p-type AlGaN layer
Electrode completes the production of deep ultraviolet LED component.
Above description is only three specific examples of the invention, does not constitute any limitation of the invention, it is clear that for this
It, all may be without departing substantially from the principle of the present invention, structure after understand the content of present invention and principle for the professional in field
In the case of, various modifications and variations in form and details are carried out, but these modifications and variations based on inventive concept are still
Within the scope of the claims of the present invention.
Claims (10)
1. one kind is based on the face c Al2O3The light emitting diode of III group-III nitride of the face c of substrate includes: the face c Al from bottom to top2O3Substrate
Layer, AlN nucleating layer, luminescent layer and electrode, it is characterised in that: AlN nucleating layer is by V/III than the high AlN circle for 15000-23000
Ring and V/III composition more alternate than low AlN annulus for 800-1200, luminescent layer are one layer of III group iii nitride layer of the face c, the III race nitrogen
Compound layer is by the face N annulus and metal covering annulus is alternate forms.
2. according to claim 1 a kind of based on the face c Al2O3The light emitting diode of III group-III nitride of the face c of substrate, it is special
Sign is: the AlN nucleating layer with a thickness of 20-40nm, and the ring width of high AlN annulus and low AlN annulus is 5-50nm.
3. according to claim 1 a kind of based on the face c Al2O3The light emitting diode of III group-III nitride of the face c of substrate, it is special
Sign is: III group iii nitride layer of the face c with a thickness of 700-2000nm.
4. according to claim 1 a kind of based on the face c Al2O3The light emitting diode of III group-III nitride of the face c of substrate, it is special
Sign is: the ring width of the face the N annulus and metal covering annulus is 5-50nm.
5. according to claim 1 a kind of based on the face c Al2O3The light emitting diode of III group-III nitride of the face c of substrate, it is special
Sign is: III group iii nitride layer of the face c, any one using GaN, in AlN and AlGaN.
6. one kind is based on the face c Al2O3The preparation method of the light emitting diode of III group-III nitride of the face c of substrate, comprising:
1) it is heat-treated:
By the face c Al2O3Substrate is placed in metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of reaction chamber is reduced to
Less than 2 × 10-2Torr；It is passed through hydrogen to reaction chamber again, MOCVD chamber pressure is made to be upgraded to 20-760Torr, by silicon
It is 900-1200 DEG C to temperature, and keeps 5-10min, completes the heat treatment to substrate base；
2) SiN mask layer is grown:
2a) use MOCVD technique under conditions of reaction chamber temperature is 950-1100 DEG C, while being passed through flow is 3000-
The ammonia and flow of 4000sccm is the silicon source of 10-20sccm, and growth thickness is 20-40nm's on substrate after heat treatment
SiN mask layer；
2b) using photoetching process according to the spacing etch away sections SiN mask layer of 5-50nm to Al2O3Substrate forms several ring widthes
For the SiN annulus figure of 5-50nm；
3) high AlN annulus is grown:
3a) using MOCVD technique to be passed through flow under conditions of reaction chamber temperature is 1000-1100 DEG C is 3000-4000sccm
Ammonia, continue 3-5min nitrogenized；
Reaction chamber temperature 3b) is reduced to 950-1100 DEG C, while being passed through ammonia that flow is 3000-4000sccm and flow is
The silicon source of 10-20sccm, i.e., V/III than being 15000-23000, in Al2O3The high AlN circle that growth thickness is 20-40nm on substrate
Ring, the ring width of high AlN annulus are 5-50nm；
4) SiN mask layer is grown:
MOCVD technique 4a) is used to keep reaction chamber temperature for 950-1100 DEG C, while being passed through flow is 3000-4000sccm's
Ammonia and flow are the silicon source of 10-20sccm, and growth thickness is 20-40nm on the SiN mask layer and high AlN annulus in 2)
SiN mask layer；
4b) using photoetching process according to the spacing etch away sections SiN mask layer of 5-50nm to Al2O3Substrate forms several ring widthes
For the SiN annulus figure of 5-50nm, etched shape and position with 2) in non-etched portions it is identical；
5) low AlN annulus is grown:
5a) using MOCVD technique to be passed through flow under conditions of reaction chamber temperature is 1000-1100 DEG C is 300-400sccm's
Ammonia continues 3-5min and is nitrogenized；
Reaction chamber temperature 5b) is reduced to 950-1100 DEG C, while being passed through ammonia that flow is 300-400sccm and flow is 20-
The silicon source of 40sccm, i.e., V/III than being 800-1200, in Al2O3The low AlN annulus that ring width is 5-50nm is grown on substrate, it is thick
Degree with 3) in high AlN annulus thickness it is identical；
SiN exposure mask 5c) is removed using photoetching process；
6) III group iii nitride layer of the face growing n-type c:
It uses MOCVD technique growth thickness for III group iii nitride layer of the face N-shaped c of 700-2000nm on AlN nucleating layer, then uses
III group iii nitride layer of photoetching process etch away sections N-shaped is to AlN nucleating layer；
7) III group iii nitride layer of the face p-type c is grown:
Use MOCVD technique growth thickness for the face p-type c of 700-2000nm in the place that III group iii nitride layer of N-shaped is etched away
III group iii nitride layer；Reaction chamber temperature is reduced to 850 DEG C again, in H2It anneals under atmosphere；
8) depositing electrode:
It is heavy in III group iii nitride layer of p-type using the method depositing n-type electrode on III group iii nitride layer of N-shaped respectively of metal sputtering
Product p-type electrode completes LED component production.
7. according to the method described in claim 6, wherein growing high AlN annulus, technique item using MOCVD technique in step 3)
Part is as follows:
Chamber pressure is 20-760Torr, and temperature is 950-1100 DEG C, and silicon source flow is 10-20sccm, and ammonia flow is
3000-4000sccm。
8. according to the method described in claim 6, wherein growing low AlN annulus, technique item using MOCVD technique in step 5)
Part is as follows:
Chamber pressure is 20-760Torr, and temperature is 950-1100 DEG C, and silicon source flow is 20-40sccm, and ammonia flow is
300-400sccm。
9. according to the method described in claim 6, wherein using III group-III nitride of the face MOCVD technique growing n-type c in step 6)
Layer, process conditions are as follows:
Chamber pressure is 20-760Torr, and temperature is 950-1100 DEG C, ammonia flow 2500-3500sccm, III race's element
Source flux is 150-250sccm, and silicon source flow is 10-20sccm.
10. according to the method described in claim 6, wherein growing III group-III nitride of the face p-type c using MOCVD technique in step 7)
Layer, process conditions are as follows:
Chamber pressure is 20-760Torr, and temperature is 950-1100 DEG C, ammonia flow 2500-3500sccm, III race's element
Source flux is 150-250sccm, and magnesium source flux is 100-180sccm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1995796A2 (en) * | 2001-10-09 | 2008-11-26 | Sumitomo Electric Industries, Ltd. | Single crystal GaN substrate and laser diode produced thereon |
| CN101901756A (en) * | 2010-06-24 | 2010-12-01 | 西安电子科技大学 | MOCVD growing method of polar c surface GaN film based on c surface Al2O3 substrate |
| CN105098017A (en) * | 2015-08-18 | 2015-11-25 | 西安电子科技大学 | N surface yellow-light LED material based on c-surface sapphire substrate and manufacturing method thereof |
| CN105140365A (en) * | 2015-08-18 | 2015-12-09 | 西安电子科技大学 | C-surface sapphire substrate-based Ga polar yellow light-emitting diode (LED) material and fabrication method thereof |
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2017
- 2017-03-31 CN CN201710210413.6A patent/CN107068813B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1995796A2 (en) * | 2001-10-09 | 2008-11-26 | Sumitomo Electric Industries, Ltd. | Single crystal GaN substrate and laser diode produced thereon |
| CN101901756A (en) * | 2010-06-24 | 2010-12-01 | 西安电子科技大学 | MOCVD growing method of polar c surface GaN film based on c surface Al2O3 substrate |
| CN105098017A (en) * | 2015-08-18 | 2015-11-25 | 西安电子科技大学 | N surface yellow-light LED material based on c-surface sapphire substrate and manufacturing method thereof |
| CN105140365A (en) * | 2015-08-18 | 2015-12-09 | 西安电子科技大学 | C-surface sapphire substrate-based Ga polar yellow light-emitting diode (LED) material and fabrication method thereof |
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